CN206210826U - Zno-based nano rod/SQW is combined UV LED - Google Patents
Zno-based nano rod/SQW is combined UV LED Download PDFInfo
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Abstract
UV LED is combined the utility model discloses a kind of zno-based nano rod/SQW, the light emitting diode includes substrate, is sequentially provided with N-shaped ZnO film layer, ZnO nano bar array, ZnO/Zn on substrate from the bottom up1‑xMgxO mqw active layers, p-type NiO film layers and first electrode；Second electrode is located on N-shaped ZnO film layer side by side with ZnO nano bar array；ZnO/Zn1‑xMgxO mqw active layer clading ZnO nano bar arrays, and 0.1≤x≤0.3.The light emitting diode electroluminescent peak wavelength is near 374nm, luminous peak width is about 17nm, the light emitting diode construction can give full play to the advantages such as the direct broad-band gap of ZnO material and exciton bind energy high, effectively weaken polarity effect, improve material and interface quality, increase active layer effective area, lifting light extraction efficiency, improve spectrum monochromaticjty, and low temperature preparation can be realized, it is with low cost, it is easy to accomplish industrialization.
Description
Technical field
The utility model is related to opto-electronic device, and ultra-violet light-emitting two is combined in particular to a kind of zno-based nano rod/SQW
Pole pipe.
Background technology
Light emitting diode (LED) is the light-emitting component being made up of semi-conducting material, is a kind of solid-state electroluminescent cold light source.
Due to light emitting diode possess low energy consumption and it is environment-friendly the features such as, its large-scale application can reduce the high-carbon energy such as coal oil
Source consumes, and meets the theory of sustainable development requirement and low-carbon economy.Light emitting diode with its low in energy consumption, long lifespan, light efficiency it is high,
Numerous advantages such as radiationless, good portability, receive greatly favor, and correlative study and industry have obtained great support and hair
Exhibition.In LED research fields, realization and the development of ultraviolet (Ultraviolet, the UV) LED of short wavelength are association area scientific research people
One of focus of member and industrial circle concern, it is considered to be the another application New World of LED after white light, prospect is extremely to find pleasure in
See.Although have some at present prepares UV using aluminum gallium nitride (AlGaN) and aluminium gallium nitrogen (InAlGaN) as active layer material
The report of LED, but generally existing fault in material density is excessive, monochromaticjty is not good enough, luminous efficiency is relatively low, service life is too short, I
The problems such as state's core patented technology lacks, and UV LED are in optic communication, day-old chick detection, biological medicine, printing packaging, high density
Storage etc. field huge applications demand cause related scientific issues solution and product technology research and development it is extremely urgent.
ZnO is a kind of II-VI group direct band gap semiconductor material with wide forbidden band, and the energy gap of ZnO is 3.37eV at room temperature,
Correspondence emission wavelength near 370nm, in ultraviolet wavelength range.The lattice structure of ZnO, cell parameter and energy gap
It is similar to conventional photo functional material gallium nitride (GaN), but ZnO has the fusing point and bigger exciton confinement higher than GaN
Can, and it is steady with relatively low luminescence generated by light and stimulated radiation threshold and good electromechanical coupling characteristics, heat endurance and chemistry
Qualitative, material is easy to get, preparation cost is cheap, environment-friendly.Thus, ZnO is considered as the preferable alternative materials of GaN, in shortwave
Application in terms of light emitting diode long, laser and related photoelectric device has huge potentiality.Additionally, carrying out magnesium by ZnO
(Mg) adulterate, can adjust its energy gap, realize energy band engineering；And low-doped magnesium zinc (ZnMgO) is lost with the lattice of ZnO
It is small with spending, ZnO/ZnMgO quantum well structures are can be applied to, expand the application field of ZnO material.
At present also have some on using ZnO as ultraviolet light emitting device material report, such as：Chinese patent application
200810120346.X discloses a kind of ZnO based LED of multiple quantum wells, its Zn for providing1-xMgxO/Zn1-yCdyO volumes
Sub- trap active layer is conventional planar structure, with compared with strong polarity effect, and active layer limited area, influences its luminous efficiency.Should
The Zinc oxide single crystal substrate that scheme is provided is with high costs, and monocrystalline substrate can then cause strong lattice mismatch, influences active
Layer material quality, the high-quality p-type ZnO of good stability is still the important problem that current industry makes great efforts to solve in addition, also exists and moves
Shifting rate, carrier concentration be relatively low and the problems such as less stable.In addition, Liu Weizhen (ZnO nano-wire heterojunction ultraviolet light transmittings
Device research [D] Changchun:Northeast Normal University, 2013.) MgZnO/ZnO cores are prepared for using pulsed laser deposition and hydro-thermal method
Shell heterogeneous structural nano linear array, and constitute luminescent device with p-type GaN.The ZnO nano-wire that the program prepares hydro-thermal method as
Light-emitting active layer, its more defect and impurity will have a strong impact on luminous efficiency.
Generally speaking, existing zno-based ultraviolet light emitting device generally existing problems with：1) lattice mismatch and polarity effect
It is relatively low that the quantu m_confined Stark effect for causing result in light emitting diode internal quantum efficiency；2) poor interface quality and material
The deep energy level that defect causes lights, and causes LED ultraviolet monochromatics poor；3) light extraction efficiency is inclined caused by traditional planar structure
It is low；4) preparation cost is high caused by the factor such as preparation technology is complicated, condition control is strict, need high temperature to prepare.It is foregoing these
Problem limits the application of zno-based ultraviolet light emitting device.
The content of the invention
The purpose of this utility model seeks to provide a kind of zno-based nano rod/SQW compound UV LED, should
UV LED good luminous performance, realizes pure UV electroluminescence of the luminous peak position near 374nm.
To achieve the above object, the technical solution adopted in the utility model is：A kind of zno-based nano rod/SQW is combined
UV LED, including substrate, be sequentially provided with from the bottom up on the substrate N-shaped ZnO film layer, ZnO nano bar array,
ZnO/Zn1-xMgxO mqw active layers, p-type NiO film layers and first electrode；Second electrode is with the ZnO nano bar array simultaneously
Row are located on N-shaped ZnO film layer；The ZnO/Zn1-xMgxO mqw active layers coat the ZnO nano bar array, and
0.1≤x≤0.3。
Further, the ZnO/Zn1-xMgxO mqw active layers are by 2~10 ZnO films and Zn in cycle1-xMgxO
Film alternating deposit is formed.
Further, the first electrode is Au, Pt, Pt/Ni or Au/Ni.
Further, the second electrode is In, Al, Ga or Ag.
Further, the substrate is Sapphire Substrate.
The utility model is acted on using the quantum confinement that ZnO quantum well structures have, while it is only to introduce ZnO nano material
Some small-size effects and skin effect, the quantum well structure (ZnO/ZnMgO) based on ZnO is mutually tied with ZnO 1-dimention nano bars
Close, form the core shell structure of ZnO nano bar/SQW as light-emitting active layer, construct the zno-based light-emitting diodes based on the structure
Pipe, realizes the pure UV electroluminescence that luminous peak position is located near 374nm, compared with prior art, shows following advantage：
First, weakening polarity effect：The characteristics of using ZnO nano bar material, in ZnO nano bar outgrowth SQW knot
Structure, the isoepitaxial growth film on its lateral non-polar m face, can significantly weaken polarity effect；Nano material is big simultaneously
Specific surface area can preferably discharge inter-laminar stress, so that lattice mismatch big at heterogeneous interface is eased, further
The effect is reduced, so as to obtain device performance boost.
Second, improving material and interface quality：When ZnO is possessing certain lattice mismatched substrate surface heterogeneous medium nucleating growth
When, there is highest energy to cause its strong tendency in three-dimensional column structure is formed in (0001) face, form substantial amounts of in film
Crystal boundary simultaneously accumulates substantial amounts of defect and impurity, it is difficult to obtain even curface, is unfavorable for the application of quantum well structure, and this practicality
The new ZnO film for obtaining low defect density and high-crystal quality and the high-quality heterojunction structure that surface is smooth, interface is precipitous
Material, improves radiative recombination rate.
Third, increase active layer effective area：Quantum well structure is prepared on the basis of One-Dimensional ZnO nano material can significantly be increased
Plus the effective area of quantum well layer, i.e.,：The region of light-emitting active layer is significantly increased, it is achieved that the exciton radiation of higher efficiency
Recombination luminescence.
Fourth, lifting light extraction efficiency：In view of the reflection of ZnO nano bar hexagonal column structure and upper and lower surface, pass through
Rational optical design, can be improved its light extraction efficiency so as to the overall luminescent properties of boost device.
Fifth, being conducive to improving spectrum monochromaticjty：The fiber waveguide effect of the core-shell structure of ZnO nano bar/SQW
The lasing of Whispering-gallery-mode or Fabry-Perot modes can be caused to light.Optical resonator is formed at material internal, and light is having
There is lattice scattering in active layer and form optical circuit, population inversion is capable of achieving after reaching threshold value, compared to the pole of Conventional luminescent two
Pipe, it is not necessary to which the design of specific resonant cavity can significantly reduce luminous peak width, improve spectrum monochromaticjty.
Sixth, low temperature preparation can be realized：The compound UV LED of the utility model zno-based nano rod/SQW
The temperature for all preparing links are can be controlled within 400 DEG C, significantly less than 1000 DEG C of main flow GaN base light emitting semiconductor device with
On preparation temperature, smoothly realize low temperature preparation, be conducive to cost control and the application of associated materials.
Seventh, the N-shaped ZnO film using growth on a sapphire substrate, is both the good seed of ZnO nano bar growth
Layer, is also ZnO/Zn1-xMgxThe electron injecting layer of O mqw active layers, double action is beneficial to simplify preparation technology, reduces life
Produce cost.
Eighth, using p-type NiO as hole injection layer, its at room temperature energy gap it is bigger with respect to ZnO, give full play to
The super injection advantage of hetero-junctions；Meanwhile, there is Ni in NiO films2+Room so that film is presented natural hole at room temperature
Conduction, so as to avoid influence of the excessive doping to crystal mass.
Ninth, the utility model prepares mqw active layer using rf magnetron sputtering system, have relative to common metal
Machine compound chemical gas-phase deposition system, cost is greatly reduced, and is advantageously implemented industrialization production.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the compound UV LED of zno-based nano rod/SQW.
Fig. 2 is the room temperature electroluminescent of the compound UV LED of zno-based nano rod/SQW obtained in embodiment 1
Spectrogram.
Fig. 3 is the room temperature electroluminescent of the compound UV LED of zno-based nano rod/SQW obtained in embodiment 2
Spectrogram.
Fig. 4 is the room temperature electroluminescent of the compound UV LED of zno-based nano rod/SQW obtained in embodiment 3
Spectrogram.
Specific embodiment
The utility model is described in further detail with specific embodiment below in conjunction with the accompanying drawings, is easy to more clearly
Solution the utility model, but they do not constitute restriction to the utility model.
The compound UV LED of zno-based nano rod/SQW as shown in Figure 1, including substrate 1, substrate 1 are blue precious
Stone lining bottom, is sequentially provided with N-shaped ZnO film layer 2, ZnO nano bar array 3, ZnO/Zn from the bottom up on substrate 11-xMgxO SQWs
Active layer 4, p-type NiO film layers 5 and first electrode 6；Second electrode 7 is located at N-shaped ZnO film side by side with ZnO nano bar array 3
On layer 2；ZnO/Zn1-xMgxThe clading ZnO nano bar array 3 of O mqw active layers 4, and 0.1≤x≤0.3, ZnO/Zn1-xMgxO is measured
Sub- trap active layer 4 is by 2~10 ZnO films and Zn in cycle1-xMgxO film alternating deposits are formed.First electrode 6 be Au, Pt,
Pt/Ni or Au/Ni, second electrode 7 is In, Al, Ga or Ag.The system of the compound UV LED of zno-based nano rod/SQW
Standby process sees below embodiment 1~3.
Embodiment 1
1) substrate cleaning：Using sapphire as substrate, be cut into 15mm × 15mm sizes, using acetone, alcohol and
Deionized water is cleaned by ultrasonic 3min respectively, finally uses N2Drying.
2) preparation of N-shaped ZnO film layer：Sapphire Substrate after surface clean is put into the life of rf magnetron sputtering system
In room long, growth room is evacuated to background air pressure 5 × 10-4Pa, heating substrate to temperature is 200 DEG C, from AZO ceramic targets
(ZnO:Al ceramic targets) used as the target of depositing n-type ZnO film layer, before plated film, pre-sputtering 10min is removing target material surface
Impurity, then using radio frequency magnetron sputtering method on a sapphire substrate depositing n-type ZnO film layer, deposition substrate temperature 200
DEG C, gas is argon gas, air pressure 0.5Pa, sputtering power 60W, sputtering time 20min during deposition.
3) preparation of ZnO nano bar array：The sample that will sputter has N-shaped ZnO film layer is placed in Zn (NO3)2·6H2O and six
Methenamine concentration is in the precursor solution of 0.01mol/L carries out hydro-thermal reaction, and hydro-thermal reaction occurs closed anti-
Answer in kettle, reaction temperature is 100 DEG C, and the reaction time is 2h, after reaction terminates, sample is taken out and ultrasound 5s is residual to remove reaction
Stay, then cleaned with a large amount of deionized waters, finally use N2Drying is placed in heating furnace, is annealed under the conditions of 400 DEG C in atmosphere
30min。
4)ZnO/Zn1-xMgxThe growth of O mqw active layers：The sample that ZnO nano bar array will have been grown is put into
In the growth room of rf magnetron sputtering system, growth room is evacuated to background air pressure 5 × 10-4Pa, heating substrate to temperature is 200
DEG C, from ZnO ceramic targets as the target for depositing ZnO potential well layers, from the mixing target conduct of Mg metallic targets and ZnO ceramic targets
Deposition Zn1-xMgxThe area ratio of the target of O barrier layers, wherein Mg metallic targets and ZnO ceramic targets is 2:3, prepared by this condition
Zn1-xMgxX=0.1 in O layers；Before plated film, then pre-sputtering 10min uses radio-frequency magnetic to remove the impurity of target material surface
The method for controlling sputtering has alternating deposit ZnO film layer on N-shaped ZnO film sample of the layer with ZnO nano bar array in growth successively
And Zn0.9Mg0.1O film layers, form 10 ZnO/Zn in cycle0.9Mg0.1O mqw active layers, 200 DEG C of deposition substrate temperature,
Air pressure 0.5Pa during deposition, relative partial pressure of oxygen O2/(O2+ Ar) it is 40%, sputtering power 60W, sputtering time 1min/ layers.
5) preparation of p-type NiO：Using the method for reactive sputtering in ZnO/Zn0.9Mg0.1It is heavy to continue on O mqw active layers
Product p-type NiO films, before plated film, pre-sputtering 5min is removing the impurity of target material surface, W metal of the target from high-purity
Target, background air pressure 5 × 10-4Pa, 150 DEG C of deposition substrate temperature, deposition pressure 0.5Pa, relative partial pressure of oxygen O2/(O2+ Ar) be
50%, sputtering power 120W, sputtering time 30min.
6) preparation of electrode：N-shaped ZnO film layer, ZnO nano bar array, ZnO/Zn will be sequentially prepared0.9Mg0.1O quantum
The sample covering metal mask version of trap active layer, p-type NiO films, is put into the growth room of rf magnetron sputtering, and growth room takes out very
It is empty to background air pressure 5 × 10-4Pa, heating substrate to temperature is 100 DEG C.From Au metallic targets as deposition of first electrode (Au electricity
Pole) target.Before plated film, pre-sputtering 10s is removing the impurity of target material surface.Then existed using radio frequency magnetron sputtering method
It is coated with deposition of first electrode (Au electrodes) on the p-type NiO films of metal mask version.100 DEG C of deposition substrate temperature；Gas during deposition
Body is Ar gas, air pressure 0.5Pa；Sputtering power 20W；Sputtering time 40s.Continue to be plated on the N-shaped ZnO of substrate surface In as the
Two electrodes.
The electroluminescent hair of the compound UV LED of zno-based nano rod/SQW obtained in the present embodiment 1 is measured at room temperature
Light spectrogram is as shown in Figure 2.
Embodiment 2
1) substrate cleaning：Using sapphire as substrate, 15mm × 15mm sizes are cut into, using acetone, alcohol, gone
Ionized water is cleaned by ultrasonic 3min respectively, finally uses N2Drying.
2) preparation of N-shaped ZnO film layer：Sapphire Substrate after surface clean is put into the life of rf magnetron sputtering system
In room long, growth room is evacuated to background air pressure 1 × 10-4Pa, heating substrate to temperature is 400 DEG C.From AZO ceramic target conducts
The target of depositing n-type ZnO film layer.Before plated film, pre-sputtering 10min is removing the impurity of target material surface.Then using penetrating
Frequency magnetically controlled sputter method on a sapphire substrate depositing n-type ZnO film layer.400 DEG C of deposition substrate temperature；Gas is Ar during deposition
Gas, air pressure 5.0Pa；Sputtering power 150W；Sputtering time 5min.
3) preparation of ZnO nano bar array：The sample that will sputter has N-shaped ZnO film is placed in Zn (NO3)2·6H2O and six is sub-
Tetramine concentration is in the precursor solution of 0.1mol/L.Hydro-thermal reaction occurs in closed reactor, reaction temperature
It it is 80 DEG C, the reaction time is 3h.After end, sample is taken out and ultrasound 5s is to remove reaction residual, then use a large amount of deionizations
Water is cleaned, and finally uses N2Drying is placed in heating furnace, and anneal under the conditions of 400 DEG C 30min in atmosphere.
4)ZnO/Zn1-xMgxThe growth of O mqw active layers：The sample that ZnO nano bar array will have been grown is put into
In the growth room of rf magnetron sputtering system, growth room is evacuated to background air pressure 1 × 10-4Pa, heating substrate to temperature is 400
℃.From ZnO ceramic targets as the target for depositing ZnO potential well layers, from the mixing target conduct of Mg metallic targets and ZnO ceramic targets
Deposition Zn1-xMgxThe area ratio of the target of O barrier layers, wherein Mg metallic targets and ZnO ceramic targets is 1:1, prepared by this condition
Zn1-xMgxX=0.18 in O layers.Before plated film, pre-sputtering 10min is removing the impurity of target material surface.Then radio-frequency magnetic is used
The method for controlling sputtering has alternating deposit ZnO film layer on N-shaped ZnO film sample of the layer with ZnO nano bar array in growth successively
And Zn0.82Mg0.18O film layers, form 2 ZnO/Zn in cycle0.82Mg0.18O mqw active layers.Deposition substrate temperature 400
℃；Air pressure 5.0Pa during deposition；Relative partial pressure of oxygen O2/(O2+ Ar) it is 15%；Sputtering power 150W；Sputtering time 2min/ layers.
5) preparation of p-type NiO：Using the method for reactive sputtering in ZnO/Zn0.82Mg0.18It is heavy to continue on O mqw active layers
Product p-type NiO films.Before plated film, pre-sputtering 5min is removing the impurity of target material surface.W metal of the target from high-purity
Target, background air pressure 1 × 10-4Pa, 200 DEG C of deposition substrate temperature；Deposition pressure 8.0Pa；Relative partial pressure of oxygen O2/(O2+ Ar) be
60%；Sputtering power 150W, sputtering time 20min.
6) preparation of electrode：N-shaped ZnO, ZnO nano bar array, ZnO/Zn will be sequentially prepared0.82Mg0.18O SQWs have
Active layer, the sample covering metal mask version of p-type NiO films, are put into the growth room of rf magnetron sputtering, and growth room is evacuated to
Background air pressure 1 × 10-4Pa, heating substrate to temperature is 100 DEG C.From Pt metallic targets as deposition of first electrode (Pt electrodes)
Target.Before plated film, pre-sputtering 10s is removing the impurity of target material surface.Then using radio frequency magnetron sputtering method in covering
There is deposition of first electrode (Pt electrodes) on the p-type NiO films of metal mask version.100 DEG C of deposition substrate temperature；Gas is during deposition
Ar gas, air pressure 0.8Pa；Sputtering power 30W；Sputtering time 30s.Continue to be plated on the N-shaped ZnO of substrate surface Ga as the second electricity
Pole.
The electroluminescent hair of the compound UV LED of zno-based nano rod/SQW obtained in the present embodiment 2 is measured at room temperature
Light spectrogram is as shown in Figure 3.
Embodiment 3
1) substrate cleaning：Using sapphire as substrate, 15mm × 15mm sizes are cut into, using acetone, alcohol, gone
Ionized water is cleaned by ultrasonic 3min respectively, finally uses N2Drying.
2) preparation of N-shaped ZnO film layer：Sapphire Substrate after surface clean is put into the life of rf magnetron sputtering system
In room long, growth room is evacuated to background air pressure 1 × 10-3Pa, heating substrate to temperature is 300 DEG C.From AZO ceramic target conducts
The target of depositing n-type ZnO film layer.Before plated film, pre-sputtering 10min is removing the impurity of target material surface.Then using penetrating
Frequency magnetically controlled sputter method on a sapphire substrate depositing n-type ZnO film layer.300 DEG C of deposition substrate temperature；Gas is Ar during deposition
Gas, air pressure 8.0Pa；Sputtering power 20W；Sputtering time 15min.
3) preparation of ZnO nano bar array：The sample that will sputter has N-shaped ZnO film is placed in Zn (NO3)2·6H2O and six is sub-
Tetramine concentration is in the precursor solution of 0.05mol/L.Hydro-thermal reaction occurs in closed reactor, reaction temperature
It it is 120 DEG C, the reaction time is 1h.After end, sample is taken out and ultrasound 5s is to remove reaction residual, then use a large amount of deionizations
Water is cleaned, and finally uses N2Drying is placed in heating furnace, and anneal under the conditions of 400 DEG C 30min in atmosphere.
4)ZnO/Zn1-xMgxThe growth of O mqw active layers：The sample that ZnO nano bar array will have been grown is put into
In the growth room of rf magnetron sputtering system, growth room is evacuated to background air pressure 1 × 10-3Pa, heating substrate to temperature is 300
℃.From ZnO ceramic targets as the target for depositing ZnO potential well layers, from the mixing target conduct of Mg metallic targets and ZnO ceramic targets
Deposition Zn1-xMgxThe area ratio of the target of O barrier layers, wherein Mg metallic targets and ZnO ceramic targets is 2:1, prepared by this condition
Zn1-xMgxX=0.3 in O layers.Before plated film, pre-sputtering 10min is removing the impurity of target material surface.Then radio-frequency magnetic is used
The method for controlling sputtering has alternating deposit ZnO film layer on N-shaped ZnO film sample of the layer with ZnO nano bar array in growth successively
And Zn0.7Mg0.3O film layers, form 8 ZnO/Zn in cycle0.7Mg0.3O mqw active layers.300 DEG C of deposition substrate temperature；It is heavy
Air pressure 8.0Pa during product；Relative partial pressure of oxygen O2/(O2+ Ar) it is 70%；Sputtering power 20W；Sputtering time 3min/ layers.
5) preparation of p-type NiO：Using the method for reactive sputtering in ZnO/Zn0.7Mg0.3It is heavy to continue on O mqw active layers
Product p-type NiO films.Before plated film, pre-sputtering 5min is removing the impurity of target material surface.W metal of the target from high-purity
Target, background air pressure 1 × 10-3Pa, 250 DEG C of deposition substrate temperature；Deposition pressure 5.0Pa；Relative partial pressure of oxygen O2/(O2+ Ar) be
60%；Sputtering power 20W, sputtering time 60min.
6) preparation of electrode：N-shaped ZnO, ZnO nano bar array, ZnO/Zn will be sequentially prepared0.7Mg0.3O Quantum well actives
The sample covering metal mask version of layer, p-type NiO films, is put into the growth room of rf magnetron sputtering, and growth room is evacuated to this
Spirit pressure 1 × 10-3Pa, heating substrate to temperature is 100 DEG C.Respectively from Ni metallic targets and Pt metallic targets as the electricity of deposition first
The target of pole (Pt/Ni electrodes).Before plated film, pre-sputtering 10s is removing the impurity of target material surface.Then radio frequency magnetron is used
Sputtering method be coated with metal mask version p-type NiO films on be sequentially depositing Ni films and Pt films as first electrode
(Pt/Ni electrodes).100 DEG C of deposition substrate temperature；Gas is Ar gas, air pressure 0.5Pa during deposition；Sputtering power 20W；Ni films and
The sputtering time of Pt films is respectively 20s and 40s.Continue to be plated on the N-shaped ZnO of substrate surface Ag as second electrode.
The electroluminescent hair of the compound UV LED of zno-based nano rod/SQW obtained in the present embodiment 3 is measured at room temperature
Light spectrogram is as shown in Figure 4.
ZnO is ultraviolet to can be seen that nano rod of the present utility model/SQW composite construction from embodiment of the present utility model
Light emitting diode has preferable luminescent properties, and the light emitting diode sends peak position positioned at wavelength 374 (± 2) nm, glow peak half
The UV electroluminescence of a width of 17 (± 8) nm high.
Claims (5)
1. a kind of compound UV LED of zno-based nano rod/SQW, including substrate (1), it is characterised in that：The lining
N-shaped ZnO film layer (2), ZnO nano bar array (3), ZnO/Zn are sequentially provided with bottom (1) from the bottom up1-xMgxO SQWs have
Active layer (4), p-type NiO film layers (5) and first electrode (6)；Second electrode (7) and the ZnO nano bar array (3) position arranged side by side
In on N-shaped ZnO film layer (2)；The ZnO/Zn1-xMgxO mqw active layers (4) coat the ZnO nano bar array
, and 0.1≤x≤0.3 (3).
2. zno-based nano rod/SQW is combined UV LED according to claim 1, it is characterised in that：It is described
ZnO/Zn1-xMgxO mqw active layers (4) are by 2~10 ZnO films and Zn in cycle1-xMgxO film alternating deposits are formed.
3. zno-based nano rod/SQW according to claim 1 or claim 2 is combined UV LED, it is characterised in that：Institute
It is Au, Pt, Pt/Ni or Au/Ni to state first electrode (6).
4. zno-based nano rod/SQW according to claim 1 or claim 2 is combined UV LED, it is characterised in that：Institute
It is In, Al, Ga or Ag to state second electrode (7).
5. zno-based nano rod/SQW according to claim 1 or claim 2 is combined UV LED, it is characterised in that：Institute
It is Sapphire Substrate to state substrate (1).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601884A (en) * | 2016-10-26 | 2017-04-26 | 中南民族大学 | ZnO-based nanorod/ quantum well composite ultraviolet light-emitting diode and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601884A (en) * | 2016-10-26 | 2017-04-26 | 中南民族大学 | ZnO-based nanorod/ quantum well composite ultraviolet light-emitting diode and preparation method thereof |
| CN106601884B (en) * | 2016-10-26 | 2019-06-21 | 中南民族大学 | Zno-based nano rod/compound UV LED of Quantum Well and preparation method thereof |
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