CN101888061B - ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof - Google Patents
ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof Download PDFInfo
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- CN101888061B CN101888061B CN2010102140268A CN201010214026A CN101888061B CN 101888061 B CN101888061 B CN 101888061B CN 2010102140268 A CN2010102140268 A CN 2010102140268A CN 201010214026 A CN201010214026 A CN 201010214026A CN 101888061 B CN101888061 B CN 101888061B
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- zno
- quantum well
- multiple quantum
- laser diode
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- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 229910003363 ZnMgO Inorganic materials 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims description 26
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 8
- 238000005546 reactive sputtering Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 168
- 239000011787 zinc oxide Substances 0.000 description 84
- 239000011701 zinc Substances 0.000 description 46
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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CN2010102140268A CN101888061B (en) | 2010-06-22 | 2010-06-22 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
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CN2010102140268A CN101888061B (en) | 2010-06-22 | 2010-06-22 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
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CN101888061A CN101888061A (en) | 2010-11-17 |
CN101888061B true CN101888061B (en) | 2011-10-05 |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103594925B (en) * | 2013-10-22 | 2016-05-11 | 溧阳市东大技术转移中心有限公司 | A kind of p-type substrate laser diode |
CN103594929B (en) * | 2013-10-22 | 2015-11-25 | 溧阳市东大技术转移中心有限公司 | A kind of laser diode with n type epitaxial substrate |
CN103594926B (en) * | 2013-10-22 | 2016-08-17 | 溧阳市东大技术转移中心有限公司 | A kind of manufacture method of laser diode with p type substrate |
CN103594927B (en) * | 2013-10-22 | 2016-03-02 | 溧阳市东大技术转移中心有限公司 | A kind of laser diode with n type substrate |
CN103594930B (en) * | 2013-10-22 | 2017-03-29 | 溧阳市东大技术转移中心有限公司 | A kind of manufacture method of laser diode with n type substrate |
CN103594922B (en) * | 2013-10-22 | 2015-11-25 | 溧阳市东大技术转移中心有限公司 | A kind of manufacture method of P-type epitaxial substrate laser diode |
CN103594928B (en) * | 2013-10-22 | 2016-05-18 | 溧阳市东大技术转移中心有限公司 | A kind of p-type epitaxial substrate laser diode |
CN103594921B (en) * | 2013-10-22 | 2015-11-25 | 溧阳市东大技术转移中心有限公司 | A kind of manufacture method of laser diode with n type epitaxial substrate |
CN104681677B (en) * | 2015-02-17 | 2017-10-27 | 吉林大学 | NiO-AlGaN ultraviolet light-emitting tube with microporous structure and preparation method thereof |
CN105762243A (en) * | 2016-03-31 | 2016-07-13 | 浙江大学 | Light-emitting diode and laser of p-GaN/ZnO-based multi-quantum well/n-ZnO structure and preparation method |
CN105742190A (en) * | 2016-05-09 | 2016-07-06 | 常州工学院 | Preparation method of ZnO-based asymmetric quantum well tunneling homogeneous p-n diode |
CN106098880B (en) * | 2016-06-23 | 2018-08-07 | 孙月静 | A kind of UV LED of p plot structures |
CN106601884B (en) * | 2016-10-26 | 2019-06-21 | 中南民族大学 | Zno-based nano rod/compound UV LED of Quantum Well and preparation method thereof |
CN117059713B (en) * | 2023-10-11 | 2024-02-02 | 深圳市领耀东方科技股份有限公司 | Preparation method of high-brightness LED chip based on micro-nano processing technology |
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2010
- 2010-06-22 CN CN2010102140268A patent/CN101888061B/en not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
---|
Hao Long, ..etal..Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes.《Applied Physics Letters》.2009,(第95期),附图1、正文第1页左栏第2段至右栏第1段. * |
Seoung-Hwan Park, ..etal.Optical gain in wurtzite ZnO/ZnMgO quantum well lasers.《 Japanese Journal of Applied Physics》.2005,第44卷(第46期),正文第1页左栏第3段至第3页右栏第3段. * |
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