CN103594930B - A kind of manufacture method of laser diode with n type substrate - Google Patents
A kind of manufacture method of laser diode with n type substrate Download PDFInfo
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- CN103594930B CN103594930B CN201310499226.6A CN201310499226A CN103594930B CN 103594930 B CN103594930 B CN 103594930B CN 201310499226 A CN201310499226 A CN 201310499226A CN 103594930 B CN103594930 B CN 103594930B
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Abstract
The invention discloses a kind of manufacture method of laser diode with n type substrate, methods described in turn includes the following steps:(1)Substrate is provided;(2)N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode are sequentially formed on substrate;(3)N-electrode is formed under substrate.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of manufacture method of laser diode with n type substrate.
Background technology
Zinc Oxide (ZnO) is a kind of new II-VI group direct band gap semiconductor material with wide forbidden band.Zinc Oxide(ZnO)Nothing
By lattice structure, cell parameter still in energy gap it is all similar to GaN, and with the fusing point higher than GaN and bigger
Exciton bind energy, and threshold value and good electromechanical coupling characteristics with relatively low luminescence generated by light and stimulated radiation, heat are steady
Qualitative and chemical stability.At room temperature, Zinc Oxide(ZnO)Energy gap be 3.37eV, free exciton combination can up to
60meV, much larger than GaN, therefore is easier exciton gain is realized under room temperature or higher temperature.But, as in the GaN of substrate
General all to include various defects, such as dislocation, gap or room etc., defect can cause crystal to strain, and strain can cause substrate
The quality of upper epitaxial layer and performance are reduced, and cause the lost of life of laser diode.Reduce semiconductor substrate materials to grow
The defect concentration formed in journey has become this area urgent problem.
The content of the invention
In order to overcome defect present in prior art, the invention provides a kind of manufacture of laser diode with n type substrate
Method, the method can significantly reduce the defect concentrations in crystals in laser diode substrate, improve the performance of laser diode
And the life-span.
The manufacture method of laser diode with n type substrate proposed by the present invention in turn includes the following steps:
(1)N-type substrate is provided;
(2)N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode are sequentially formed in n-type substrate;
(3)N-electrode is formed under n-type substrate.
Wherein, wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material for forming the multiple quantum well layer is ZnO/Zn1- aMgaO/Zn1-bAsbO, wherein 0 < a≤0.2,0 < b≤0.3;
Wherein, p-type boundary layer is p-AlxInyGa1-x-yP, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, p-type implanted layer is N-shaped NiO implanted layers;
Wherein, n-electrode is In, Al, Ga, Ag or ITO;P-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(Tin indium oxide).
The manufacture method of laser diode proposed by the present invention, it is possible to obtain following beneficial effect:
1. n-Al is adoptedxInyGa1-x-yThe N-shaped boundary layer of N and p-AlxInyGa1-x-yThe p-type boundary layer of P, can be effective
The defect concentration formed in reducing semiconductor substrate materials growth course;
2. multiple quantum well layer ZnO/Zn is adopted1-aMgaO/Zn1-bAsbO can substantially increase carrier as luminescent layer
Recombination probability, improves the luminous efficiency of laser diode;
3. hetero-junctions injection is formed as hole injection layer using p-type NiO, this hetero-junctions has the advantages that super injection,
So as to further improve luminous efficiency.
Description of the drawings
Fig. 1 is the structural representation of the laser diode obtained by manufacture method proposed by the present invention.
Specific embodiment
Referring to Fig. 1, manufacture method proposed by the present invention in turn includes the following steps:
(1)N-type substrate 2 is provided;Using GaN is grown on sapphire, after the completion of growth, sapphire is removed, obtain N-shaped
GaN substrate 2;Then the n-type substrate 2 is cleaned, ultrasound wave cleaning is carried out initially with acetone, ethanol, then adopt and go
Ionized water is rinsed, and so that the acetone and alcohol washes that will remain in n-type substrate 2 are clean, finally serves as a contrast N-shaped with nitrogen gun
The deionized water on 2 surface of bottom is air-dried;
(2)N-shaped boundary layer 3, luminescent layer 4, p-type boundary layer 5, p-type implanted layer 6 and p are sequentially formed in n-type substrate 2 electric
Pole 7;
Wherein, n-Al is grown in n-type substrate 2xInyGa1-x-yN materials, so as to form N-shaped boundary layer 3;Wherein 0 < x≤
1,0 < y≤1 and x+y≤1, preferably, 0 < x≤0.55,0 < y≤0.45;
Then ZnO layer, Zn are sputtered on N-shaped boundary layer 3 successively by rf magnetron sputtering technique1-aMgaO layers and Zn1- bAsbO layers, so as to form the luminescent layer 4 of a cycle;In the present invention, in order to further improve luminous efficiency, the luminescent layer
4 can be formed as multiple cycles, and concrete grammar is:On the upper surface of the luminescent layer 4 after a cycle is formed(That is Zn1-bAsbO
On the upper surface of layer), ZnO layer, Zn are sputtered successively again by rf magnetron sputtering technique1-aMgaO layers and Zn1-bAsbO layers, from
And form the luminescent layer 4 of second period;So do not stop repeatedly, so as to form the luminescent layer 4 in multiple cycles, in the present invention, 0
< a≤0.2,0 < b≤0.3;Preferably, 0 < a≤0.1,0 < b≤0.15, the luminescent layer 4 formed altogether 10-20 it is all
Phase, preferably form 15-18 cycle.The design parameter of rf magnetron sputtering technique is:No more than 10-3The background air pressure of Pa
Under, 2 temperature of substrate is heated to into 220~300 DEG C, 80~120W of sputtering power, ZnO layer, Zn1-aMgaO layers and Zn1-bAsbO layers
Sputtering time is 2~3 minutes.
Then, p-Al is grown on the upper surface of luminescent layer 4xInyGa1-x-yP, so as to form p-type boundary layer 5, wherein 0 <
X≤1,0 < y≤1 and x+y≤1, preferably, 0 < x≤0.55,0 < y≤0.45;
Hereafter, p-type NiO material is deposited on p-type boundary layer 5 using the method for reactive sputtering, to form p-type implanted layer
6.Specifically technical process is:Using highly purified W metal as target, it is 10 in background air pressure-4Under the atmosphere of Pa, will form sediment
Accumulated temperature degree be set as 350 DEG C, deposit air pressure be set as 6Pa, relative partial pressure of oxygen O2/(O2+ Ar) it is set as 60%;Power setting is
230W, sputtering time are set as:50 minutes.
After the completion of p-type implanted layer 6 is manufactured, splash-proofing sputtering metal material or metal compound material to be to form p-electrode 7 thereon,
The metal material is Au, Pt, Pt/Ni alloy or Au/Ni alloys, and the metal compound material is ITO(Tin indium oxide);
(3)In 2 times splash-proofing sputtering metal materials of substrate or metal compound material to form n-electrode 1, the metal material is
In, Al, Ga or Ag, the metal compound material are ITO(Tin indium oxide);
So far the present invention is described in detail, but the embodiment of description above is only merely the preferred of the present invention
Embodiment, which is not intended to limit the present invention.Those skilled in the art can make any modification to the present invention, and the guarantor of the present invention
Shield scope is limited to the appended claims.
Claims (1)
1. a kind of manufacture method of laser diode with n type substrate, it is characterised in that methods described in turn includes the following steps:
(1) provide n-type substrate;
(2) N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode are sequentially formed in n-type substrate;
(3) n-electrode is formed under substrate;
Wherein, p-type implanted layer is hole injection layer;
Luminescent layer is formed by rf magnetron sputtering technique;The detailed process of the rf magnetron sputtering technique is:Little
In 10-3Under the background air pressure of Pa, underlayer temperature is heated to into 220~300 DEG C, sputtering power is set as 80~120W, splashes successively
Penetrate ZnO layer, Zn1-aMgaO layers and Zn1-bAsbO layers are to form the luminescent layer;Sputtering time is 2~3 minutes;
Wherein, ZnO layer, the Zn of the luminescent layer are constituted1-aMgaO layers and Zn1-bAsbO layers form 10-20 altogether as a cycle
The individual cycle;
Wherein, the specific embodiment of p-type implanted layer is:Using highly purified W metal as target, it is 10 in background air pressure- 4Under the atmosphere of Pa, by deposition temperature be set as 350 DEG C, deposit air pressure be set as 6Pa, relative partial pressure of oxygen O2/(O2+ Ar) it is set as
60%;
Power setting is 230W, and sputtering time is set as:50 minutes;
Wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, p-type boundary layer are p-AlxInyGa1-x-yP;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material for forming the multiple quantum well layer is ZnO/Zn1-aMgaO/
Zn1-bAsbO;
Wherein, p-type implanted layer is p-type NiO implanted layer;
Wherein, n-electrode is In, Al, Ga, Ag or ITO;P-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO;
Wherein, 0 < x≤1,0 < y≤1 and x+y≤1;0 < a≤0.2,0 < b≤0.3.
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
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2013
- 2013-10-22 CN CN201310499226.6A patent/CN103594930B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |