CN103594930B - A kind of manufacture method of laser diode with n type substrate - Google Patents

A kind of manufacture method of laser diode with n type substrate Download PDF

Info

Publication number
CN103594930B
CN103594930B CN201310499226.6A CN201310499226A CN103594930B CN 103594930 B CN103594930 B CN 103594930B CN 201310499226 A CN201310499226 A CN 201310499226A CN 103594930 B CN103594930 B CN 103594930B
Authority
CN
China
Prior art keywords
layer
type
substrate
electrode
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310499226.6A
Other languages
Chinese (zh)
Other versions
CN103594930A (en
Inventor
丛国芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Liyang Technology Development Center
Original Assignee
LIYANG DONGDA TECHNOLOGY TRANSFER CENTER Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LIYANG DONGDA TECHNOLOGY TRANSFER CENTER Co Ltd filed Critical LIYANG DONGDA TECHNOLOGY TRANSFER CENTER Co Ltd
Priority to CN201310499226.6A priority Critical patent/CN103594930B/en
Publication of CN103594930A publication Critical patent/CN103594930A/en
Application granted granted Critical
Publication of CN103594930B publication Critical patent/CN103594930B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses a kind of manufacture method of laser diode with n type substrate, methods described in turn includes the following steps:(1)Substrate is provided;(2)N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode are sequentially formed on substrate;(3)N-electrode is formed under substrate.

Description

A kind of manufacture method of laser diode with n type substrate
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of manufacture method of laser diode with n type substrate.
Background technology
Zinc Oxide (ZnO) is a kind of new II-VI group direct band gap semiconductor material with wide forbidden band.Zinc Oxide(ZnO)Nothing By lattice structure, cell parameter still in energy gap it is all similar to GaN, and with the fusing point higher than GaN and bigger Exciton bind energy, and threshold value and good electromechanical coupling characteristics with relatively low luminescence generated by light and stimulated radiation, heat are steady Qualitative and chemical stability.At room temperature, Zinc Oxide(ZnO)Energy gap be 3.37eV, free exciton combination can up to 60meV, much larger than GaN, therefore is easier exciton gain is realized under room temperature or higher temperature.But, as in the GaN of substrate General all to include various defects, such as dislocation, gap or room etc., defect can cause crystal to strain, and strain can cause substrate The quality of upper epitaxial layer and performance are reduced, and cause the lost of life of laser diode.Reduce semiconductor substrate materials to grow The defect concentration formed in journey has become this area urgent problem.
The content of the invention
In order to overcome defect present in prior art, the invention provides a kind of manufacture of laser diode with n type substrate Method, the method can significantly reduce the defect concentrations in crystals in laser diode substrate, improve the performance of laser diode And the life-span.
The manufacture method of laser diode with n type substrate proposed by the present invention in turn includes the following steps:
(1)N-type substrate is provided;
(2)N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode are sequentially formed in n-type substrate;
(3)N-electrode is formed under n-type substrate.
Wherein, wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material for forming the multiple quantum well layer is ZnO/Zn1- aMgaO/Zn1-bAsbO, wherein 0 < a≤0.2,0 < b≤0.3;
Wherein, p-type boundary layer is p-AlxInyGa1-x-yP, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, p-type implanted layer is N-shaped NiO implanted layers;
Wherein, n-electrode is In, Al, Ga, Ag or ITO;P-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(Tin indium oxide).
The manufacture method of laser diode proposed by the present invention, it is possible to obtain following beneficial effect:
1. n-Al is adoptedxInyGa1-x-yThe N-shaped boundary layer of N and p-AlxInyGa1-x-yThe p-type boundary layer of P, can be effective The defect concentration formed in reducing semiconductor substrate materials growth course;
2. multiple quantum well layer ZnO/Zn is adopted1-aMgaO/Zn1-bAsbO can substantially increase carrier as luminescent layer Recombination probability, improves the luminous efficiency of laser diode;
3. hetero-junctions injection is formed as hole injection layer using p-type NiO, this hetero-junctions has the advantages that super injection, So as to further improve luminous efficiency.
Description of the drawings
Fig. 1 is the structural representation of the laser diode obtained by manufacture method proposed by the present invention.
Specific embodiment
Referring to Fig. 1, manufacture method proposed by the present invention in turn includes the following steps:
(1)N-type substrate 2 is provided;Using GaN is grown on sapphire, after the completion of growth, sapphire is removed, obtain N-shaped GaN substrate 2;Then the n-type substrate 2 is cleaned, ultrasound wave cleaning is carried out initially with acetone, ethanol, then adopt and go Ionized water is rinsed, and so that the acetone and alcohol washes that will remain in n-type substrate 2 are clean, finally serves as a contrast N-shaped with nitrogen gun The deionized water on 2 surface of bottom is air-dried;
(2)N-shaped boundary layer 3, luminescent layer 4, p-type boundary layer 5, p-type implanted layer 6 and p are sequentially formed in n-type substrate 2 electric Pole 7;
Wherein, n-Al is grown in n-type substrate 2xInyGa1-x-yN materials, so as to form N-shaped boundary layer 3;Wherein 0 < x≤ 1,0 < y≤1 and x+y≤1, preferably, 0 < x≤0.55,0 < y≤0.45;
Then ZnO layer, Zn are sputtered on N-shaped boundary layer 3 successively by rf magnetron sputtering technique1-aMgaO layers and Zn1- bAsbO layers, so as to form the luminescent layer 4 of a cycle;In the present invention, in order to further improve luminous efficiency, the luminescent layer 4 can be formed as multiple cycles, and concrete grammar is:On the upper surface of the luminescent layer 4 after a cycle is formed(That is Zn1-bAsbO On the upper surface of layer), ZnO layer, Zn are sputtered successively again by rf magnetron sputtering technique1-aMgaO layers and Zn1-bAsbO layers, from And form the luminescent layer 4 of second period;So do not stop repeatedly, so as to form the luminescent layer 4 in multiple cycles, in the present invention, 0 < a≤0.2,0 < b≤0.3;Preferably, 0 < a≤0.1,0 < b≤0.15, the luminescent layer 4 formed altogether 10-20 it is all Phase, preferably form 15-18 cycle.The design parameter of rf magnetron sputtering technique is:No more than 10-3The background air pressure of Pa Under, 2 temperature of substrate is heated to into 220~300 DEG C, 80~120W of sputtering power, ZnO layer, Zn1-aMgaO layers and Zn1-bAsbO layers Sputtering time is 2~3 minutes.
Then, p-Al is grown on the upper surface of luminescent layer 4xInyGa1-x-yP, so as to form p-type boundary layer 5, wherein 0 < X≤1,0 < y≤1 and x+y≤1, preferably, 0 < x≤0.55,0 < y≤0.45;
Hereafter, p-type NiO material is deposited on p-type boundary layer 5 using the method for reactive sputtering, to form p-type implanted layer 6.Specifically technical process is:Using highly purified W metal as target, it is 10 in background air pressure-4Under the atmosphere of Pa, will form sediment Accumulated temperature degree be set as 350 DEG C, deposit air pressure be set as 6Pa, relative partial pressure of oxygen O2/(O2+ Ar) it is set as 60%;Power setting is 230W, sputtering time are set as:50 minutes.
After the completion of p-type implanted layer 6 is manufactured, splash-proofing sputtering metal material or metal compound material to be to form p-electrode 7 thereon, The metal material is Au, Pt, Pt/Ni alloy or Au/Ni alloys, and the metal compound material is ITO(Tin indium oxide);
(3)In 2 times splash-proofing sputtering metal materials of substrate or metal compound material to form n-electrode 1, the metal material is In, Al, Ga or Ag, the metal compound material are ITO(Tin indium oxide);
So far the present invention is described in detail, but the embodiment of description above is only merely the preferred of the present invention Embodiment, which is not intended to limit the present invention.Those skilled in the art can make any modification to the present invention, and the guarantor of the present invention Shield scope is limited to the appended claims.

Claims (1)

1. a kind of manufacture method of laser diode with n type substrate, it is characterised in that methods described in turn includes the following steps:
(1) provide n-type substrate;
(2) N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode are sequentially formed in n-type substrate;
(3) n-electrode is formed under substrate;
Wherein, p-type implanted layer is hole injection layer;
Luminescent layer is formed by rf magnetron sputtering technique;The detailed process of the rf magnetron sputtering technique is:Little In 10-3Under the background air pressure of Pa, underlayer temperature is heated to into 220~300 DEG C, sputtering power is set as 80~120W, splashes successively Penetrate ZnO layer, Zn1-aMgaO layers and Zn1-bAsbO layers are to form the luminescent layer;Sputtering time is 2~3 minutes;
Wherein, ZnO layer, the Zn of the luminescent layer are constituted1-aMgaO layers and Zn1-bAsbO layers form 10-20 altogether as a cycle The individual cycle;
Wherein, the specific embodiment of p-type implanted layer is:Using highly purified W metal as target, it is 10 in background air pressure- 4Under the atmosphere of Pa, by deposition temperature be set as 350 DEG C, deposit air pressure be set as 6Pa, relative partial pressure of oxygen O2/(O2+ Ar) it is set as 60%;
Power setting is 230W, and sputtering time is set as:50 minutes;
Wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, p-type boundary layer are p-AlxInyGa1-x-yP;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material for forming the multiple quantum well layer is ZnO/Zn1-aMgaO/ Zn1-bAsbO;
Wherein, p-type implanted layer is p-type NiO implanted layer;
Wherein, n-electrode is In, Al, Ga, Ag or ITO;P-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO;
Wherein, 0 < x≤1,0 < y≤1 and x+y≤1;0 < a≤0.2,0 < b≤0.3.
CN201310499226.6A 2013-10-22 2013-10-22 A kind of manufacture method of laser diode with n type substrate Active CN103594930B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310499226.6A CN103594930B (en) 2013-10-22 2013-10-22 A kind of manufacture method of laser diode with n type substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310499226.6A CN103594930B (en) 2013-10-22 2013-10-22 A kind of manufacture method of laser diode with n type substrate

Publications (2)

Publication Number Publication Date
CN103594930A CN103594930A (en) 2014-02-19
CN103594930B true CN103594930B (en) 2017-03-29

Family

ID=50084965

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310499226.6A Active CN103594930B (en) 2013-10-22 2013-10-22 A kind of manufacture method of laser diode with n type substrate

Country Status (1)

Country Link
CN (1) CN103594930B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
CN101888061A (en) * 2010-06-22 2010-11-17 武汉大学 ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
CN101888061A (en) * 2010-06-22 2010-11-17 武汉大学 ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof

Also Published As

Publication number Publication date
CN103594930A (en) 2014-02-19

Similar Documents

Publication Publication Date Title
CN101888061B (en) ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof
CN102403417B (en) Group III nitride nanorod light emitting device and method for manufacturing the same
CN102169930B (en) Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles
JP2008235877A (en) Solar cell and manufacturing method therefor
JP5520496B2 (en) Manufacturing method of solar cell
CN101505035B (en) P-zinc oxide/N- nickel oxide heterogeneous PN junction ultraviolet laser diode and method for production
CN106601884B (en) Zno-based nano rod/compound UV LED of Quantum Well and preparation method thereof
CN107316923A (en) A kind of sinusoidal SQW couples enhanced GaN base light emitting
CN105846310A (en) Light-emitting enhancement type electron beam pumping ultraviolet light source and preparation method thereof
JP5876189B2 (en) Method for forming metal particle layer and method for manufacturing light-emitting element
CN106711294A (en) Epitaxial wafer of light-emitting diode and preparation method thereof
CN103594930B (en) A kind of manufacture method of laser diode with n type substrate
CN107731971B (en) Vertical structure LED chip based on photonic crystal and preparation method thereof
CN103594921B (en) A kind of manufacture method of laser diode with n type epitaxial substrate
CN102185071B (en) Non-polar ZnO-based luminescent device and manufacturing method thereof
CN100424892C (en) Heterojunction pn diode based on silicon nanoline and producing method thereof
CN102157650B (en) Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) with vertical structure
CN103594926B (en) A kind of manufacture method of laser diode with p type substrate
CN103594922B (en) A kind of manufacture method of P-type epitaxial substrate laser diode
CN102263372B (en) P-type ZnO and n-type GaN combined ZnO-based vertical cavity surface emitting laser and preparation method
CN206210826U (en) Zno-based nano rod/SQW is combined UV LED
CN104201255B (en) Method for improving p-type ohmic contact performance of GaN-based light-emitting device
CN107302044A (en) A kind of SQW couples enhancement type ZnO based light-emitting diode
JP5682938B2 (en) Semiconductor light emitting device
JP2008311421A (en) Manufacturing method of group iii nitride compound semiconductor light emitting element, group iii nitride compound semiconductor light emitting element, and lamp

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170724

Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182

Patentee after: Liyang Technology Development Center

Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67

Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD.