CN101114682A - AlGaInP based LED - Google Patents
AlGaInP based LED Download PDFInfo
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- CN101114682A CN101114682A CNA200610088943XA CN200610088943A CN101114682A CN 101114682 A CN101114682 A CN 101114682A CN A200610088943X A CNA200610088943X A CN A200610088943XA CN 200610088943 A CN200610088943 A CN 200610088943A CN 101114682 A CN101114682 A CN 101114682A
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Abstract
An AlGaInP-based light emitting diode is characterized in that the AlGaInP-based light emitting diode comprises an n-typed restriction layer above a reflector to provide restriction of carriers, an active layer grows above the n-typed lower restriction layer, a p-typed upper restriction layer above the active layer provides pressure-restriction of carriers, a window layer bonded above the p-typed upper restriction layer improves extension of currents and extraction rate of light, a p-typed metal electrode which forms a good ohm contact with the GaP window layer, and an n-typed metal electrode is below the reflector.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of assembly that can improve AlGaInP (AlGaInP) based light-emitting diode light extraction efficiency.
Background technology
(AlxGa1-x) direct band gap of 0.5In 0.5P material is from 1.9～2.26eV (x=0～0.5), and corresponding emission wavelength has covered the visible light wave range from red to green (560～650nm), so this material is the excellent material of preparation light-emitting diode.In order to obtain high internal quantum efficiency, require the AlGaInP material epitaxy is grown on the GaAs substrate of lattice match, yet because the GaAs substrate absorbs visible light, therefore the part of the light directive substrate that is sent by the luminous zone and will be absorbed by substrate by the light that light output surface reflexes to substrate has greatly reduced the light extraction efficiency of light-emitting diode.
The main method that addresses this problem at present is: make the light-emitting diode (TS-LED) of transparent substrates with the method for wafer bonding, promptly use transparent gallium phosphide (GaP) substrate to replace gallium arsenic (GaAs) and absorb substrate, Fig. 1 is the schematic diagram of its manufacturing process.It at first is growth active layer 11 on the n of lattice match type GaAs substrate 10, utilize the Window layer 12 of VPE method grow thick then, utilize the method for chemical corrosion to remove GaAs substrate 10 subsequently, at last n type transparent GaP substrate 13 and epitaxial loayer (11 and 12) bonding.Though the light-emitting diode function admirable that this method is made, but there are two shortcomings in this method: at first be that time of utilizing the Window layer 12 of VPE grow thick to need is longer, and exist serious defective because lattice does not match in the Window layer 12 that causes growing; Next is in manufacturing process, needs to handle very thin epitaxial loayer 11 and 12 (about 50 μ m), and thin epitaxial loayer is very easily cracked, is difficult to guarantee its integrality in bonding process.Therefore the manufacture difficulty of this method is bigger, and the production cycle is long.
In view of the above, we develop the modular construction that a kind of improvement, can avoid the defective of existing method.
Summary of the invention
Main purpose of the present invention is: overcome the deficiencies in the prior art and defective, a kind of AlGaInP based light-emitting diode is provided, thereby avoid the length consuming time of growth window layer and make the big defective of transparent substrates difficulty.
To achieve these goals, the invention provides following technical scheme:
A kind of AlGaInP based light-emitting diode is characterized in that, comprising:
One reflector;
One n type lower limit layer, this n type lower limit layer is produced on the reflector, and the carrier confinement effect is provided;
One active layer, this active layer are grown on the n type lower limit layer;
One p type upper limiting layer, this p type upper limiting layer is produced on the active layer, and the carrier confinement effect is provided;
One Window layer, this Window layer are bonded on the p type upper limiting layer, to promote current expansion and to improve light extraction efficiency;
One p type metal electrode, this p type metal electrode and GaP Window layer form good Ohmic contact;
One n type metal electrode, this n type metal electrode be produced on reflector below.
Wherein said reflector is a distributed Bragg reflector.
The material of wherein said reflector 21 is adopted as AlxGa1-xAs/Al0.9Ga0.1As.
The material of wherein said Window layer is GaP.
A kind of AlGaInP based light-emitting diode of the present invention is characterized in that, comprising:
One n type lower limit layer provides the carrier confinement effect;
One active layer, this active layer are grown on the n type lower limit layer;
One p type upper limiting layer, this p type upper limiting layer is produced on the active layer, and the carrier confinement effect is provided;
One Window layer, this Window layer are bonded on the p type upper limiting layer, to promote current expansion and to improve light extraction efficiency;
One p type metal electrode, this p type metal electrode and GaP Window layer form good Ohmic contact;
One n type transparent electrode layer, this n type transparent electrode layer be produced on n type lower limit layer below.
The material of wherein said Window layer is GaP.
Wherein N type transparent electrode layer is ITO, or is any other transparent electrode material.
A kind of AlGaInP based light-emitting diode of the present invention is characterized in that, comprising:
One n type lower limit layer provides the carrier confinement effect;
One active layer, this active layer are grown on the n type lower limit layer;
One p type upper limiting layer, this p type upper limiting layer is produced on the active layer, and the carrier confinement effect is provided;
One Window layer, this Window layer are bonded on the p type upper limiting layer, to promote current expansion and to improve light extraction efficiency;
One p type metal electrode, this p type metal electrode and GaP Window layer form good Ohmic contact;
One n type high reflecting metal electrode, this n type high reflecting metal electrode layer be produced on n type lower limit layer below.
The material of wherein said Window layer is GaP.
Wherein said n type high reflecting metal electrode is the multiple layer metal layer that contains Ag or Al layer, or any metal alloy compositions, and reflectivity is more than 90%.
Beneficial effect of the present invention is:
1, the present invention is applicable to the AlGaInP based light-emitting diode, owing to adopt bonding method to make thick Window layer earlier, and then remove GaAs absorption substrate.Thereby the length consuming time and the big shortcoming of manufacture difficulty of growth window layer in making traditional TS-LED process have been avoided.
2, the present invention is owing to adopt reflector or transparency electrode and at the thick GaP layer of p type end bonding, so can improve light extraction efficiency effectively taking into account under the situation of making difficulty at n type end.
Description of drawings
Feature of the present invention, technological means, concrete function and concrete example, continuing is described in detail as follows with accompanying drawing, figure number, wherein:
Fig. 1 is the manufacturing process of conventional transparent substrate AlGaInP;
Fig. 2 is the structural representation of the present invention's first example;
Fig. 3 is the structural representation of the present invention's second example;
Fig. 4 is the structural representation of the present invention's the 3rd example.
Embodiment
As shown in Figure 2, be AlGaInP light-emitting diode first example.
In first example, light-emitting device of the present invention comprises:
One reflector 21, this reflector 21 is a distributed Bragg reflector, material adopts the AlxGa1-xAs/Al0.9Ga0.1As system, to guarantee that this reflector has high reflectance and less series resistance, this reflector can reflect active layer 23 and be transmitted into light on it, also the light that Window layer 25 reflexes on it can be reflected back again, improved the extraction efficiency of light greatly.
One n type lower limit layer, 22, one active layers, 23, one p type upper limiting layers 24, n type lower limit layer 22 and p type upper limiting layer 24 play the carrier confinement effect, and the carrier confinement injected in very thin active layer 23, has been improved rate of radiative recombination greatly.
One Window layer 25, the material of this Window layer are GaP, and this Window layer is bonded on the p type upper limiting layer 24, and thick Window layer 25 helps the current expansion under the p type metal electrode 26 and improves the extraction efficiency of light.
One p type metal electrode 26, this p type metal electrode 26 is produced on the Window layer 25, and this p type metal electrode 26 adopts AuZn to do ohmic contact.
One n type metal electrode 20, this n type metal electrode 20 be produced on reflector 21 below.This n type metal electrode 20 adopts AuGeNi to do ohmic contact.
As shown in Figure 3, be AlGaInP light-emitting diode second example.
In second example, light-emitting device of the present invention comprises:
One n type lower limit layer, 22, one active layers, 23, one p type upper limiting layers 24, n type lower limit layer 22 and p type upper limiting layer 24 play the carrier confinement effect, and the carrier confinement injected in very thin active layer 23, has been improved rate of radiative recombination greatly.
One Window layer 25, the material of this Window layer are GaP, and this Window layer is bonded on the p type upper limiting layer 24, and thick Window layer 25 helps the current expansion under the p metal electrode 26 and improves the extraction efficiency of light.
One p type metal electrode 26, this p type metal electrode 26 is produced on the Window layer 25, and this p type metal electrode 26 adopts AuZn to do ohmic contact.
One n type transparency electrode 30, this n type transparency electrode 30 be produced on n type lower limit layer 22 below, these n type transparency electrode 30 usefulness transparent electrode materials are made, not only can form good Ohmic contact with n type lower limit layer 22, but also can transmission projecting light on it, its light transmittance is more than 80%.Project the light on this electrode, the overwhelming majority can see through this n type transparency electrode 30 and be extracted out, can greatly improve the extraction efficiency of light.
As shown in Figure 4, be AlGaInP light-emitting diode the 3rd example.
In the 3rd example, light-emitting device of the present invention comprises: a n type lower limit layer 22, one active layer 23, one p type upper limiting layer 24, n type lower limit layer 22 and p type upper limiting layer 24 play the carrier confinement effect, the carrier confinement injected in very thin active layer 23, has been improved rate of radiative recombination greatly.
One Window layer 25, the material of this Window layer are GaP, and this Window layer is bonded on the p type upper limiting layer 24, and thick Window layer 25 helps the current expansion under the p metal electrode 26 and improves the extraction efficiency of light.
One p type metal electrode 26, this electrode adopt AuZn to do ohmic contact.
One n type metal electrode 40, this n type metal electrode 40 be produced on n type lower limit layer 22 above, this n type metal electrode 40 is the high reflecting electrodes of metal, its structure is the complex metal layer that contains Ag or Al, not only can form good Ohmic contact with n type lower limit layer 22, but also can reflect the light that projects on it, its reflectivity is more than 90%.This n type metal electrode 40 can reflect active layer 23 and be transmitted into light on it, also the light that Window layer 25 reflexes on it can be reflected back again, has improved the extraction efficiency of light greatly.
More than be of the present invention giving an example,, can also derive other various schemes according to the principle of the invention.
Claims (10)
1. an AlGaInP based light-emitting diode is characterized in that, comprising:
One reflector;
One n type lower limit layer, this n type lower limit layer is produced on the reflector, and the carrier confinement effect is provided;
One active layer, this active layer are grown on the n type lower limit layer;
One p type upper limiting layer, this p type upper limiting layer is produced on the active layer, and the carrier confinement effect is provided;
One Window layer, this Window layer are bonded on the p type upper limiting layer, to promote current expansion and to improve light extraction efficiency;
One p type metal electrode, this p type metal electrode and GaP Window layer form good Ohmic contact;
One n type metal electrode, this n type metal electrode be produced on reflector below.
2. AlGaInP based light-emitting diode as claimed in claim 1 is characterized in that wherein said reflector is a distributed Bragg reflector.
3. AlGaInP based light-emitting diode as claimed in claim 1 is characterized in that the material of wherein said reflector 21 is adopted as AlxGa1-xAs/Al0.9Ga0.1As.
4. AlGaInP based light-emitting diode as claimed in claim 1 is characterized in that, the material of wherein said Window layer is GaP.
5. an AlGaInP based light-emitting diode is characterized in that, comprising:
One n type lower limit layer provides the carrier confinement effect;
One active layer, this active layer are grown on the n type lower limit layer;
One p type upper limiting layer, this p type upper limiting layer is produced on the active layer, and the carrier confinement effect is provided;
One Window layer, this Window layer are bonded on the p type upper limiting layer, to promote current expansion and to improve light extraction efficiency;
One p type metal electrode, this p type metal electrode and GaP Window layer form good Ohmic contact;
One n type transparent electrode layer, this n type transparent electrode layer be produced on n type lower limit layer below.
6. AlGaInP based light-emitting diode as claimed in claim 5 is characterized in that, the material of wherein said Window layer is GaP.
7. AlGaInP based light-emitting diode as claimed in claim 5 is characterized in that, wherein N type transparent electrode layer is ITO, or is any other transparent electrode material.
8. an AlGaInP based light-emitting diode is characterized in that, comprising:
One n type lower limit layer provides the carrier confinement effect;
One active layer, this active layer are grown on the n type lower limit layer;
One p type upper limiting layer, this p type upper limiting layer is produced on the active layer, and the carrier confinement effect is provided;
One Window layer, this Window layer are bonded on the p type upper limiting layer, to promote current expansion and to improve light extraction efficiency;
One p type metal electrode, this p type metal electrode and GaP Window layer form good Ohmic contact;
One n type high reflecting metal electrode, this n type high reflecting metal electrode layer be produced on n type lower limit layer below.
9. AlGaInP based light-emitting diode as claimed in claim 8 is characterized in that, the material of wherein said Window layer is GaP.
10. AlGaInP based light-emitting diode as claimed in claim 8 is characterized in that, wherein said n type high reflecting metal electrode is the multiple layer metal layer that contains Ag or Al layer, or any metal alloy compositions, and reflectivity is more than 90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610088943XA CN101114682A (en) | 2006-07-27 | 2006-07-27 | AlGaInP based LED |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200610088943XA CN101114682A (en) | 2006-07-27 | 2006-07-27 | AlGaInP based LED |
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| CN101114682A true CN101114682A (en) | 2008-01-30 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137818A (en) * | 2013-03-07 | 2013-06-05 | 天津三安光电有限公司 | Light-emitting diode (LED) used for plant illumination |
| CN104979433A (en) * | 2014-04-14 | 2015-10-14 | 厦门乾照光电股份有限公司 | Manufacturing method of four-element system light emitting diode with new electrode structure |
| CN105449055A (en) * | 2015-12-22 | 2016-03-30 | 扬州乾照光电有限公司 | Series PN junction LED and production method thereof |
| CN110164989A (en) * | 2019-06-03 | 2019-08-23 | 长春理工大学 | N-type AlxGa1-xAs material system semiconductor surface Ohm contact electrode and preparation method thereof |
-
2006
- 2006-07-27 CN CNA200610088943XA patent/CN101114682A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137818A (en) * | 2013-03-07 | 2013-06-05 | 天津三安光电有限公司 | Light-emitting diode (LED) used for plant illumination |
| WO2014134871A1 (en) * | 2013-03-07 | 2014-09-12 | 厦门市三安光电科技有限公司 | Led for plant illumination |
| CN103137818B (en) * | 2013-03-07 | 2016-03-30 | 天津三安光电有限公司 | A kind of LED for plant illumination |
| CN104979433A (en) * | 2014-04-14 | 2015-10-14 | 厦门乾照光电股份有限公司 | Manufacturing method of four-element system light emitting diode with new electrode structure |
| CN105449055A (en) * | 2015-12-22 | 2016-03-30 | 扬州乾照光电有限公司 | Series PN junction LED and production method thereof |
| CN110164989A (en) * | 2019-06-03 | 2019-08-23 | 长春理工大学 | N-type AlxGa1-xAs material system semiconductor surface Ohm contact electrode and preparation method thereof |
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