CN206194740U - Direct current direct current converting circuit's packaging structure - Google Patents
Direct current direct current converting circuit's packaging structure Download PDFInfo
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- CN206194740U CN206194740U CN201621305597.1U CN201621305597U CN206194740U CN 206194740 U CN206194740 U CN 206194740U CN 201621305597 U CN201621305597 U CN 201621305597U CN 206194740 U CN206194740 U CN 206194740U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The utility model provides a direct current direct current converting circuit's packaging structure, does it include lead frame, direct current direct current converting circuit and cladding lead frame and direct current direct current converting circuit's packaging body. The lead frame, it includes first ji dao, second jidao and sets up the pin around first jidao and second jidao, the direct current does direct current converting circuit include the direct current direct current control circuit chip, two at least MOS pipes. Wherein, MOS pipe and the 2nd MOS pipe all lie in first ji dao's front, and the drain electrode of MOS pipe and the 2nd MOS pipe all is connected with first basic island electricity, the source electrode of MOS pipe and the 2nd MOS pipe is connected with the pin electricity that corresponds of lead frame respectively, the direct current direct current control circuit chip, its front that lies in second ji dao, direct current direct current control circuit chip is connected with the pin electricity that corresponds of a MOS pipe, the 2nd MOS pipe and lead frame. Compared with the prior art, therefore,
Description
【Technical field】
The utility model is related to technical field of semiconductor encapsulation, more particularly to a kind of encapsulation of DC-to-dc change-over circuit
Structure.
【Background technology】
The envelope of existing common DC-DC (direct current-direct current, DC-to-dc) change-over circuit
Assembling structure mainly has two kinds of packing forms：Single-chip package or polylith integrated circuit.
For single-chip package, its high cost that there is chip, and power output is dumb, and light shield input is big etc.
Shortcoming.
It is well known that generally including control circuit and power device two using the DC-DC change-over circuits of single-chip package
Point, power device is metal-oxide-semiconductor (Metal-Oxide-Semiconductor), and using BCD technique flows, usual light shield quantity is about
There are 20 layers.Integrated circuit wafer cost is generally related to light shield quantity direct proportion.And in the circuit, usual power device (output
Pipe) area account for whole chip area more than 50% if by the power device in said chip with control circuit separate
(i.e. multicore sheet mode), then power device can be using DMOS (Discrete Metal-Oxide-Silicon, discrete type gold
Category-oxide-silicon) technique flow.And generally only 7 layers of the light shield quantity of DMOS techniques, and using DMOS technique flows
Device is more preferable than the device performance using BCD technique flows.It is general to estimate, the chip of the DC-DC change-over circuits of single-chip package
Cost is 2 times or so of multi-chip package.It follows that there is the high cost of chip in single-chip package.
Fixed due to cost area using the DC-DC change-over circuits of single-chip package, its maximum power output is also fixed.
If in the market has the requirement of different power outputs, it is necessary to design different circuits, the investment of light shield is increased.If using
The mode of multi-chip package, for different power output demands, control chip is the same, as long as from different metal-oxide-semiconductors
Just can be with, and metal-oxide-semiconductor is normal component, and in the market has multiple specification to supply.Light shield investment can so be saved.Thus may be used
Know, single-chip package also has that power output is dumb, light shield puts into big problem.
For polylith integrated antenna package, the shortcomings of there is packaging cost high, poor reliability and welding cost high in it.
Also have on the market and DC-DC control chips are made into standard component, metal-oxide-semiconductor is also made into standard component, be packaged into respectively
The way (i.e. polylith integrated antenna package) of product circuit.This method generally has as a drawback that：Due to DC-DC control chips and
Metal-oxide-semiconductor needs individually encapsulation, so that packaging cost is higher；The quantity of part increases.For a system, number of components
The increase of amount necessarily corresponds to the increase of chance of failure；With the increase of number of parts, welding quantity accordingly increases, so as to increased
The complexity and volume of system.
Therefore, it is necessary to provide a kind of new encapsulating structure to solve the above problems.
【Utility model content】
The purpose of this utility model is to provide a kind of encapsulating structure of DC-to-dc change-over circuit, and it can not only be carried
The circuit design and peripheral solder of packaging efficiency high, simplified pcb board, but also the reliability of circuit can be improved, reduce system
Cost.
In order to solve the above problems, the utility model provides a kind of encapsulating structure of DC-to-dc change-over circuit, and it includes
The packaging body of lead frame, DC-to-dc change-over circuit and the cladding lead frame and DC-to-dc change-over circuit.Lead frame,
Its pin for including the first Ji Dao, the second Ji Dao and being arranged at around the first Ji Dao and the second Ji Dao；The DC-to-dc turns
Changing circuit includes DC-to-dc control circuit chip, and at least two metal-oxide-semiconductors, wherein, at least two metal-oxide-semiconductor includes
First metal-oxide-semiconductor and the second metal-oxide-semiconductor, first metal-oxide-semiconductor and the second metal-oxide-semiconductor are respectively positioned on the front of first Ji Dao, and described
The drain electrode of the first metal-oxide-semiconductor and the drain electrode of the second metal-oxide-semiconductor are electrically connected with first Ji Dao；The source electrode of first metal-oxide-semiconductor and
Corresponding pin of the source electrode of second metal-oxide-semiconductor respectively with the lead frame is electrically connected；DC-to-dc control circuit chip, its
Positioned at the front of second Ji Dao, the DC-to-dc control circuit chip and the first metal-oxide-semiconductor, the second metal-oxide-semiconductor and lead
The corresponding pin electrical connection of frame.
Further, the lead frame also includes the 3rd Ji Dao, and the DC-to-dc change-over circuit also includes the 3rd MOS
Pipe and the 4th metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are respectively positioned on the front of the 3rd Ji Dao, the 3rd metal-oxide-semiconductor
Drain electrode and the drain electrode of the 4th metal-oxide-semiconductor electrically connected with the 3rd Ji Dao, the source electrode and the described 4th of the 3rd metal-oxide-semiconductor
The source electrode of metal-oxide-semiconductor is connected respectively at the corresponding pin of the lead frame, the relevant pad of the DC-to-dc control circuit chip
Also electrically connected with the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
Further, the source electrode of each metal-oxide-semiconductor is electrically connected with multiple corresponding pins of lead frame, and the plurality of corresponding pin
It is linked to be an overall source terminal as correspondence metal-oxide-semiconductor.
Further, the multiple corresponding pin is linked to be an entirety by routing or aluminium strip.
Further, the metal-oxide-semiconductor is obtained by DMOS techniques, and each metal-oxide-semiconductor is a chip.
Further, the drain electrode of first metal-oxide-semiconductor and the drain electrode of the second metal-oxide-semiconductor is electrically connected by conducting resinl with the first Ji Dao
Connect；The drain electrode of the 3rd metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor are electrically connected by conducting resinl with the 3rd Ji Dao.
Further, first metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are PMOS transistor；Second metal-oxide-semiconductor and the 4th MOS
It is nmos pass transistor to manage.
Further, the first Ji Dao and the 3rd Ji Dao are symmetrically distributed in the both sides of the second Ji Dao.
Further, the back side of the Ji Dao exposes to the packaging body.
Further, the height of the encapsulating structure of the DC-to-dc change-over circuit is 0.75mm~0.85mm.
Compared with prior art, the utility model is by the DC-DC control circuit chips and power device in DC-DC change-over circuits
Part integration packaging is in an integrated package, so as to can not only improve packaging efficiency, the circuit design of simplified pcb board and outer weld all around
Connect, but also the reliability of circuit can be improved, reduce system cost.
【Brief description of the drawings】
In order to illustrate more clearly of the technical scheme of the utility model embodiment, below will be to being wanted needed for embodiment description
The accompanying drawing for using is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present utility model
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these accompanying drawings
Obtain other accompanying drawings.Wherein：
Fig. 1 is the encapsulating structure internal junction in one embodiment of the DC-to-dc change-over circuit in the utility model
Structure schematic diagram.
【Specific embodiment】
To enable above-mentioned purpose of the present utility model, feature and advantage more obvious understandable, below in conjunction with the accompanying drawings and tool
Body implementation method is described in further detail to the utility model.
" one embodiment " or " embodiment " referred to herein refers to that may be included in the side of realization of the utility model at least one
Special characteristic, structure or characteristic in formula." in one embodiment " that different places occur in this manual not refers both to
Same embodiment, nor the single or selective embodiment mutually exclusive with other embodiment.Unless stated otherwise,
The word that connection herein, the expression for being connected, connecting are electrically connected with is represented and is directly or indirectly electrical connected.
The utility model is that (Quad Flat No-leadPackage, quad flat is without drawing for a kind of QFN encapsulation on Duo Ji islands
Pin encapsulate) DC-DC change-over circuits, using special designs lead frame be laid out.
Refer to shown in Fig. 1, it is the encapsulating structure of the DC-to-dc change-over circuit in the utility model in an implementation
Internal structure schematic diagram in example.The encapsulating structure of the DC-to-dc change-over circuit shown in Fig. 1 includes lead frame 100, DC-DC
The packaging body (not shown) of change-over circuit (mark) and the cladding lead frame 100 and DC-DC change-over circuits.
The lead frame 100 includes the first base island 110, the second base island 120, the 3rd base island 130 and is arranged in Ji Dao
110th, the PIN pins (for example, PIN1-48) around 120 and 130.In the embodiment shown in fig. 1, the first base island 110 and the 3rd
Base island 130 is symmetrically distributed in the both sides on the second base island 120.
The DC-DC change-over circuits include DC-DC control circuit chips 210, the first metal-oxide-semiconductor MP1, the second metal-oxide-semiconductor MN1,
3rd metal-oxide-semiconductor MP2 and the 4th metal-oxide-semiconductor MN2.
Wherein, the first metal-oxide-semiconductor MP1 and the second metal-oxide-semiconductor MN1 is located at the front on the first base island 110；The first metal-oxide-semiconductor MP1
Drain electrode and the drain electrode of the second metal-oxide-semiconductor MN1 are electrically connected with the first base island 110.3rd metal-oxide-semiconductor MP2 and the 4th metal-oxide-semiconductor MN2
Positioned at the front on the 3rd base island 130；The 3rd metal-oxide-semiconductor MP2 drain electrode and the 4th metal-oxide-semiconductor MN2 drain electrode with the 3rd Ji Dao
130 electrical connections.The PIN pins electrical connection corresponding with lead frame 100 respectively of the source electrode of metal-oxide-semiconductor MP1, MN1, MP2 and MN2.
In the embodiment shown in fig. 1, the source electrode of the first metal-oxide-semiconductor MP1 is electric with the PIN pins PIN1-PIN5 of lead frame 100
Connection, the PIN pins PIN1-PIN5 is connected to become an entirety, as the source terminal of the first metal-oxide-semiconductor MP1；It is described
The source electrode of the second metal-oxide-semiconductor MN1 is electrically connected with the PIN pins PIN7-PIN11 of lead frame 100, the PIN pins PIN7-PIN11
An entirety is connected to become, as the source exit of the second metal-oxide-semiconductor MP1；The source electrode and lead frame of the 3rd metal-oxide-semiconductor MP2
100 PIN pins PIN32-PIN36 electrical connections, the PIN pins PIN32-PIN36 is connected to become an entirety, as the
The source exit of three metal-oxide-semiconductor MP2；The source electrode of the 4th metal-oxide-semiconductor MN2 is electric with the PIN pins PIN25-PIN29 of lead frame 100
Connection, the PIN pins PIN25-PIN29 is connected to become an entirety, as the source terminal of the 4th metal-oxide-semiconductor MN2.
In one embodiment, PIN pins PIN1-PIN5 can be linked together by routing or aluminium strip；PIN pins
PIN7-PIN11 can be linked together by routing or aluminium strip；PIN pins PIN7-PIN11 can be connected by routing or aluminium strip
It is connected together；PIN pins PIN32-PIN36 can be linked together by routing or aluminium strip.
The control circuit chip 210 is located at the front on the second base island 120, and the control circuit chip 210 has
PAD pads are closed to be connected with the corresponding pin of corresponding metal-oxide-semiconductor MP1, MN1, MP2, MN2 and lead frame 100 by routing.
In one embodiment, the first metal-oxide-semiconductor MP1, the second metal-oxide-semiconductor MN1, the 3rd metal-oxide-semiconductor MP2 and the 4th metal-oxide-semiconductor
MN2 is obtained by DMOS techniques.Each metal-oxide-semiconductor is an independent chip.The drain electrode of the first metal-oxide-semiconductor MP1 and the 2nd MOS
The drain electrode of pipe MN1 is electrically connected by conducting resinl with the first base island 110；The drain electrode of the 3rd metal-oxide-semiconductor MP2 and the 4th metal-oxide-semiconductor MN2
Drain electrode electrically connected with the 3rd base island 130 by conducting resinl.
In the embodiment shown in fig. 1, the first metal-oxide-semiconductor MP1 and the 3rd metal-oxide-semiconductor MP2 are PMOS transistor, the 2nd MOS
Pipe MN1 and the 4th metal-oxide-semiconductor MN2 are nmos pass transistor.Wherein, the first metal-oxide-semiconductor MP1, the second metal-oxide-semiconductor MN1 and control electricity
Road chip 210 constitutes the DC-DC change-over circuits of the first power output；3rd metal-oxide-semiconductor MP2, the 4th metal-oxide-semiconductor MN2 and the control
Circuit chip 210 constitutes the DC-DC change-over circuits of the second power output.So, can to form two-way independently defeated for the utility model
The DC-DC change-over circuits for going out.
Due to the metal-oxide-semiconductor in DC-DC change-over circuits and control circuit being separated in the utility model, therefore, this practicality is new
First to fourth metal-oxide-semiconductor in type can be obtained using DMOS techniques.Generally only 7 layers of the light shield quantity of DMOS techniques, uses
The device of DMOS technique flows is more preferable than the device performance using BCD technique flows；And metal-oxide-semiconductor is normal component, in the market
There is multiple specification to supply.Light shield investment can so be saved.
Additionally, the back side on the first base island 110, the second base island 120 and the 3rd base island 130 in the utility model is exposed
In the packaging body, to there is radiating.
The encapsulating structure of DC-to-dc change-over circuit as shown in Figure 1 in the utility model, by one block of DC-DC control electricity
Road chip 210 and four metal-oxide-semiconductor chipsets are mounted in an integrated package, using the packing forms of QFN48.The DC- of QFN encapsulation
DC change-over circuits, its profile length and width size is 7mm*7mm*0.85mm.Different according to packaging technology, packaging body height can also be
0.75mm or other.In one embodiment, the height of the encapsulating structure of the DC-to-dc change-over circuit in the utility model can
Think 0.75mm~0.85mm.
It should be strongly noted that in one embodiment, can be by the 3rd base island 130 in Fig. 1 and positioned at the 3rd base
The 3rd metal-oxide-semiconductor MP2 and the 4th metal-oxide-semiconductor MN2 on island 130 are omitted, so as to obtain the only DC-to-dc with the first power output
The encapsulating structure of change-over circuit；In another embodiment, it is also possible on the basis of the embodiment shown in Fig. 1, it is further added by
Four Ji Dao and the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor on the 4th Ji Dao, by the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the control
Circuit chip processed 210 constitutes the DC-DC change-over circuits of the 3rd power output.So, the utility model can form three tunnels or more
The DC-DC change-over circuits that multichannel is independently exported.
In sum, the DC-to-dc change-over circuit in the utility model by one piece of DC-DC control circuit chip with it is multiple
Metal-oxide-semiconductor chipset is mounted in an integrated package, using the packing forms of QFN.Compared to prior art on the market, it has as follows
Advantage：
1st, as a result of the encapsulation of QFN, small volume.
2nd, the connection between control circuit and metal-oxide-semiconductor becomes internal routing, and peripheral exit is few, simplifies PCB design.
3rd, peripheral exit is few, and antistatic effect is strong, and reliability is high；
4th, Ji Dao exposes, perfect heat-dissipating；
5th, compared to single chip solution, cost reduction.
In the utility model, " connection ", connected, " company ", " connecing " etc. represent the word being electrical connected, and such as nothing is especially said
It is bright, then it represents that direct or indirect electric connection.
It is pointed out that one skilled in the art specific embodiment of the present utility model is done it is any
Change the scope all without departing from claims of the present utility model.Correspondingly, the scope of claim of the present utility model
It is not limited only to previous embodiment.
Claims (10)
1. a kind of encapsulating structure of DC-to-dc change-over circuit, it is characterised in that it includes lead frame, DC-to-dc conversion electricity
Road and the packaging body of the cladding lead frame and DC-to-dc change-over circuit,
Lead frame, its pin for including the first Ji Dao, the second Ji Dao and being arranged at around the first Ji Dao and the second Ji Dao；
The DC-to-dc change-over circuit includes DC-to-dc control circuit chip, and at least two metal-oxide-semiconductors, wherein, institute
At least two metal-oxide-semiconductors are stated including the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, first metal-oxide-semiconductor and the second metal-oxide-semiconductor are respectively positioned on described the
The front of one Ji Dao, and the drain electrode and the drain electrode of the second metal-oxide-semiconductor of first metal-oxide-semiconductor electrically connect with first Ji Dao；Institute
The corresponding pin of the source electrode respectively with the lead frame of the source electrode and second metal-oxide-semiconductor of stating the first metal-oxide-semiconductor is electrically connected；
DC-to-dc control circuit chip, its front for being located at second Ji Dao, the DC-to-dc control circuit chip
Corresponding pin with the first metal-oxide-semiconductor, the second metal-oxide-semiconductor and lead frame is electrically connected.
2. the encapsulating structure of DC-to-dc change-over circuit according to claim 1, it is characterised in that the lead frame is also
Including the 3rd Ji Dao, the DC-to-dc change-over circuit also includes the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor,
3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are respectively positioned on the front of the 3rd Ji Dao, the drain electrode of the 3rd metal-oxide-semiconductor and
The drain electrode of four metal-oxide-semiconductors is electrically connected with the 3rd Ji Dao, the source electrode of the 3rd metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor
It is connected respectively at the corresponding pin of the lead frame,
The relevant pad of the DC-to-dc control circuit chip is also electrically connected with the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
3. the encapsulating structure of DC-to-dc change-over circuit according to claim 2, it is characterised in that
The source electrode of each metal-oxide-semiconductor is electrically connected with multiple corresponding pins of lead frame, and the plurality of corresponding pin is linked to be an entirety
As the source terminal of correspondence metal-oxide-semiconductor.
4. the encapsulating structure of DC-to-dc change-over circuit according to claim 3, it is characterised in that the multiple correspondence
Pin is linked to be an entirety by routing or aluminium strip.
5. the encapsulating structure of DC-to-dc change-over circuit according to claim 2, it is characterised in that
The metal-oxide-semiconductor is obtained by DMOS techniques, and each metal-oxide-semiconductor is a chip.
6. the encapsulating structure of DC-to-dc change-over circuit according to claim 5, it is characterised in that
The drain electrode of first metal-oxide-semiconductor and the drain electrode of the second metal-oxide-semiconductor are electrically connected by conducting resinl with the first Ji Dao；
The drain electrode of the 3rd metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor are electrically connected by conducting resinl with the 3rd Ji Dao.
7. the encapsulating structure of DC-to-dc change-over circuit according to claim 2, it is characterised in that
First metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are PMOS transistor；
Second metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are nmos pass transistor.
8. the encapsulating structure of DC-to-dc change-over circuit according to claim 2, it is characterised in that
First Ji Dao and the 3rd Ji Dao are symmetrically distributed in the both sides of the second Ji Dao.
9. the encapsulating structure of DC-to-dc change-over circuit according to claim 2, it is characterised in that
The back side of the Ji Dao exposes to the packaging body.
10. the encapsulating structure of DC-to-dc change-over circuit according to claim 2, it is characterised in that
The height of the encapsulating structure of the DC-to-dc change-over circuit is 0.75mm~0.85mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621305597.1U CN206194740U (en) | 2016-11-30 | 2016-11-30 | Direct current direct current converting circuit's packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621305597.1U CN206194740U (en) | 2016-11-30 | 2016-11-30 | Direct current direct current converting circuit's packaging structure |
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| CN206194740U true CN206194740U (en) | 2017-05-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108122900A (en) * | 2016-11-30 | 2018-06-05 | 无锡华润矽科微电子有限公司 | The encapsulating structure of DC-DC conversion circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108122900A (en) * | 2016-11-30 | 2018-06-05 | 无锡华润矽科微电子有限公司 | The encapsulating structure of DC-DC conversion circuit |
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Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: No. 180-22, Linghu Avenue, Taihu International Science and Technology Park, New District, Wuxi City, Jiangsu Province, 214135 Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |
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