CN206193282U - Alternately waveguide based on SOI material - Google Patents
Alternately waveguide based on SOI material Download PDFInfo
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- CN206193282U CN206193282U CN201621285798.XU CN201621285798U CN206193282U CN 206193282 U CN206193282 U CN 206193282U CN 201621285798 U CN201621285798 U CN 201621285798U CN 206193282 U CN206193282 U CN 206193282U
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- waveguide
- gap
- silicon
- silica
- intersection
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- 239000000463 material Substances 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 230000007704 transition Effects 0.000 claims abstract description 21
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- 230000035772 mutation Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000002360 preparation method Methods 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Abstract
The utility model discloses an alternately waveguide based on SOI material, it is by input output area, transition district to and the zone of intersection is constituteed, input output area is the straight waveguide in gap, and the straight waveguide in this gap is by the straight waveguide of two silicon to and perpendicular gap component, wherein, two straight waveguides of silicon are the slab waveguide, and silica is filled in perpendicular gap intussuseption, the transition district is the gap curved waveguide, and this gap curved waveguide is by two silicon curved waveguides to and perpendicular gap component, wherein, two silicon curved waveguides are the slab waveguide, and high refractive index silica is filled in perpendicular gap intussuseption, the zone of intersection is a straight waveguide, should straighten the waveguide by a high refractive index silica waveguide to and silica constitutes. Simultaneously, the utility model discloses an alternately waveguide based on SOI material's preparation method has still been revead. The utility model discloses an alternately waveguide crossover loss with crosstalk for a short time, the work tape is roomy, preparation technology's tolerance is big, is suitable for low cost, high integration, the extensive manufacturing.
Description
Technical field
The utility model is related to a kind of fiber waveguide for being applied to the fields such as optic communication, optical interconnection, optical oomputing, light sensing, special
It is not related to a kind of crossing waveguide based on SOI materials.
Background technology
With the appearance of multi-core microprocessor, and the transistor integrated level more and more higher in microprocessor, microprocessor
Direct and its internal interconnection bandwidth demand also constantly increasing, electrical interconnection exist power consumption it is big, when the parasitic effect such as extension, crosstalk be high
Answer problem increasingly severe, as the bottleneck that interconnection bandwidth further increases.Silicon-on-insulator (Silicon-on-
Insulator, SOI) it is a kind of silicon materials for large scale integrated circuit, its superior optical characteristics causes the weight of people
Depending on the light network technology based on SOI becomes the focus of research.Light network technology based on SOI have small power consumption, bandwidth it is high,
Time delay is short, the low advantage of crosstalk, compared with other semi-conducting materials, also has the advantage that：CMOS technology with microelectronics is simultaneous
Hold, it is easy to accomplish extensive photoelectron single-chip integration, reduce device cost；Refringence is big, and waveguide dimensions are small, device integration
It is high.SOI base light network technologies are combined with large scale integrated circuit technology, can realize that optoelectronic intagration is returned on monolithic
Road, this is considered as a kind of effective scheme of the electrical interconnection bottlenecks that solution presently, there are, and its application prospect is very wide.It is based on
The features such as gap waveguide of SOI has compact conformation, integrated level high, superior performance, has very well in light network and light sensing field
Application prospect.
In order to reduce chip area, improve integrated level, the intersection of waveguide be in fiber waveguide device inevitably.Due to folding
The discontinuous of rate is penetrated, the intersection region of waveguide can occur stronger scattering and reflection, cause larger loss and crosstalk, influence
The performance of chip.General individual layer SOI based optical waveguides device is done by extending intersection region, optimization intersecting angle, designing multimode
The methods such as coupler are related to weaken the influence that intersection is caused.But the knot of the gap waveguide of SOI bases and general SOI based optical waveguides
Structure is different, and its crossing waveguide structure is also required to special design.
Utility model content
The purpose of this utility model is for drawbacks described above of the prior art, there is provided a kind of crossover loss and crosstalk
Small, bandwidth of operation is big, the tolerance of preparation technology is big, be suitable to low cost, high integration, manufacture on a large scale based on SOI materials
Crossing waveguide.
To realize above-mentioned utility model purpose, the utility model employs following technical scheme：It is a kind of based on SOI materials
Crossing waveguide, it is by input/output area, the zone of intersection, and is connected to the transition district's groups between input/output area and the zone of intersection
Into；Input/output area is gap straight wave guide, and the gap straight wave guide is made up of two silicon straight wave guides, and vertical clearance gap, wherein,
Two silicon straight wave guides are filling silica in slab waveguide, vertical clearance gap；Transition region is gap curved waveguide, and the gap is curved
Bent waveguide is made up of two silicon curved waveguides, and vertical clearance gap, wherein, two silicon curved waveguides are slab waveguide, vertically
High index of refraction silica is filled in gap；The zone of intersection is a straight wave guide, and the straight wave guide is by a high index of refraction silica
Waveguide, and silica composition.
Additionally, the utility model also provides following attached technical scheme：
Two silicon straight wave guides are single mode waveguide.
Two silicon curved waveguides are single mode waveguide.
Two orthogonal silicon straight wave guides in the input/output area are connected by the silicon curved waveguide of the transition region
Connect, it is to avoid the mutation of refractive index and discontinuous.
High index of refraction SiO 2 waveguide phase in the transition region in the high index of refraction silica of filling and the zone of intersection
Even, a coupled structure for gradual change is constituted.
Compared to prior art, the advantage of the crossing waveguide based on SOI materials of the present utility model is as follows：
1st, the crossing waveguide structure of gap waveguide be divide into input/output area, transition region and the zone of intersection, by these three
The matching of area optical mould field and gradually transition so that crossover loss becomes very little with crosstalk；
2nd, using the optical signal in the high index of refraction SiO 2 waveguide limitation zone of intersection, this causes the mould field and mistake of the zone of intersection
The mould field for crossing area matches very well, crossover loss and crosstalk all very littles, almost can be ignored；
3rd, resonance structure, work are not related to using the high index of refraction SiO 2 waveguide structure of width gradual change in chi structure
Make also big with roomy, preparation technology tolerance.
Brief description of the drawings
Fig. 1 is the top view of crossing waveguide structure of the present utility model.
Fig. 2 is the sectional view of the a-a lines along Fig. 1.
Fig. 3 is the sectional view of the b-b lines along Fig. 1.
Fig. 4 is the sectional view of the c-c lines along Fig. 1.
Fig. 5 be crossing waveguide preparation method in step 1 flow chart.
Fig. 6 be crossing waveguide preparation method in step 2 flow chart.
Fig. 7 be crossing waveguide preparation method in step 3 flow chart.
Fig. 8 be crossing waveguide preparation method in step 4 flow chart.
Specific embodiment
Technical solutions of the utility model are made with further nonrestrictive detailed below in conjunction with preferred embodiment and its accompanying drawing
Explanation.
The gap crossing waveguide structure being not optimised in the prior art has very big loss and crosstalk, and its reason is essentially consisted in
The refractive index of waveguide infall is undergone mutation and discontinuously causes the scattering of optical signal and reflect.The purpose of this utility model is exactly
Cause that gap crossing waveguide structure is as gentle as possible in the variations in refractive index of waveguide infall, reduce optical signal scattering with it is anti-
Penetrate, so as to reduce the loss and crosstalk of crossing waveguide structure.
Referring to Fig. 1, the crossing waveguide structure of the gap waveguide based on SOI materials of the present utility model includes：Input/output
Area, transition region, and the zone of intersection, input/output area are connected with transition region, and transition region one end is connected with input/output area, another
End is connected with the zone of intersection.
See Fig. 2, input/output area is used for the input and output of signal, and it is gap straight wave guide, and the gap straight wave guide is by two
Bar silicon straight wave guide 11,12, vertical clearance gap and silica 4 are constituted, wherein, two silicon straight wave guides 11,12 are single mode waveguide,
Be shaped as bar shaped, filling silica 4 in vertical clearance gap, vertical clearance gap it is small-sized, optical signal is limited in vertical clearance gap
Inside it is transmitted.
See Fig. 3, transition region is used to connect orthogonal straight wave guide, and it is gap curved waveguide, and the gap curved waveguide is by two
Bar silicon curved waveguide 21,22, vertical clearance gap, high index of refraction silica 3, and silica 4 is constituted, wherein, two silicon are curved
Bent waveguide 21,22 is single mode waveguide, is shaped as filling high index of refraction silica 3 in bar shaped, vertical clearance gap, vertical clearance gap
Small-sized, optical signal is limited in vertical clearance gap and is transmitted.
See Fig. 4, the zone of intersection is used to realize two intersections of orthogonal gap straight wave guide that it to be a straight wave guide, the straight ripple
Lead and be made up of a high index of refraction SiO 2 waveguide 3, and silica 4, optical signal is limited in high index of refraction titanium dioxide
It is transmitted in silicon waveguide.
Two groups of orthogonal silicon straight wave guides in the input/output area of crossing waveguide structure of the present utility model pass through silicon bending wave
Lead to connect, it is to avoid the mutation of refractive index and discontinuous.In transition region in the high index of refraction silica of filling and the zone of intersection
High index of refraction SiO 2 waveguide is connected, and constitutes a coupled structure for gradual change.The coupled structure of the gradual change is by the straight ripple in gap
Optical signal in leading completes the zone of intersection gradually coupled in high index of refraction SiO 2 waveguide by high index of refraction SiO 2 waveguide
The transmission of interior optical signal, this construction reduces the discontinuous of refractive index, reduces the loss and crosstalk of optical signal.Do not have in the zone of intersection
There is silicon waveguide, it is to avoid strong reflection, reduce loss and crosstalk.Limited by high index of refraction SiO 2 waveguide in the zone of intersection
Optical signal.The high index of refraction SiO 2 waveguide structure of width gradual change is used in the chi structure, is not related to resonance structure,
Bandwidth of operation is big, the tolerance of preparation technology is also big.
The technological process for making the crossing waveguide structure for being applied to the gap waveguide based on SOI materials of the present utility model
Figure, specifically includes following steps：
Step 1, as shown in figure 5, with photoresist as mask, SOI top layer silicons are etched using dry etching technology, makes gap
Waveguide, the gap waveguide includes：Constitute the gap straight wave guide 11,12 in input/output area, and the gap bending for constituting transition region
Waveguide 21,22.
Step 2, as shown in fig. 6, using plasma strengthens chemical vapour deposition technique (PECVD), in the silicon gap for making
Silica 4 is deposited in waveguide；By covering lithography, with photoresist as mask, using dry etching technology etching silicon dioxide
4。
Step 3, as shown in fig. 7, using PECVD, the high index of refraction silica 3 of deposit doping germanium oxide；Using chemistry
Mechanical polishing method, removes unnecessary high index of refraction silica 3.High index of refraction silica 3 is doped with germanium oxide.
Step 4, as shown in figure 8, by covering lithography, with photoresist as mask, losing high using dry etching technology light engraving
Refractive index silica 3, completes the vertical clearance gap between using high index of refraction silica 3 to fill transition region curved waveguide 21,22,
Complete the making of zone of intersection high index of refraction SiO 2 waveguide 3；PECVD is finally used, deposit silica 4 is used as surrounding layer.
It is this suitable for the crossing waveguide structure of the gap waveguide based on SOI materials and its making that the utility model is provided
Method, mainly designs the crossing waveguide structure of gap waveguide, by transition region and the zone of intersection, makes the refraction of crossing waveguide structure
Rate change is as gentle as possible, reduces reflection and scattering that crossing waveguide structure causes.It is this suitable for the gap based on SOI materials
The loss of the crossing waveguide structure of waveguide and crosstalk very little, almost can be ignored.Devised gradually in transition region and the zone of intersection
The high index of refraction SiO 2 waveguide of change, its bandwidth of operation is big, makes tolerance also big.
It is pointed out that above-mentioned preferred embodiment is only explanation technology design of the present utility model and feature, its purpose
It is to allow person skilled in the art will appreciate that content of the present utility model and implement according to this, this reality can not be limited with this
With new protection domain.All equivalent change or modifications made according to the utility model Spirit Essence, should all cover in this reality
Within new protection domain.
Claims (5)
1. a kind of crossing waveguide based on SOI materials, it is characterised in that it is by input/output area, the zone of intersection, and is connected to defeated
Enter/transition region between output area and zone of intersection composition；
Input/output area is gap straight wave guide, and the gap straight wave guide is made up of two silicon straight wave guides, and vertical clearance gap, wherein,
Two silicon straight wave guides are filling silica in slab waveguide, vertical clearance gap；
Transition region is gap curved waveguide, and the gap curved waveguide is made up of two silicon curved waveguides, and vertical clearance gap, its
In, two silicon curved waveguides are filling high index of refraction silica in slab waveguide, vertical clearance gap；
The zone of intersection is a straight wave guide, and the straight wave guide is by a high index of refraction SiO 2 waveguide, and silica composition.
2. the crossing waveguide based on SOI materials according to claim 1, it is characterised in that：Two silicon straight wave guides are equal
It is single mode waveguide.
3. the crossing waveguide based on SOI materials according to claim 1, it is characterised in that：Two silicon curved waveguides
It is single mode waveguide.
4. the crossing waveguide based on SOI materials according to claim 1, it is characterised in that：The two of the input/output area
The orthogonal silicon straight wave guide of bar is connected by the silicon curved waveguide of the transition region, it is to avoid the mutation of refractive index and discontinuous.
5. the crossing waveguide based on SOI materials according to claim 1, it is characterised in that：Filling in the transition region
High index of refraction silica is connected with the high index of refraction SiO 2 waveguide in the zone of intersection, constitutes a coupling knot for gradual change
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621285798.XU CN206193282U (en) | 2016-11-28 | 2016-11-28 | Alternately waveguide based on SOI material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621285798.XU CN206193282U (en) | 2016-11-28 | 2016-11-28 | Alternately waveguide based on SOI material |
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| Publication Number | Publication Date |
|---|---|
| CN206193282U true CN206193282U (en) | 2017-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621285798.XU Expired - Fee Related CN206193282U (en) | 2016-11-28 | 2016-11-28 | Alternately waveguide based on SOI material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405732A (en) * | 2016-11-28 | 2017-02-15 | 广西大学 | Intersecting waveguide based on SOI material and manufacturing method thereof |
| CN114384628A (en) * | 2020-10-04 | 2022-04-22 | 上海交通大学 | Optical waveguide arrangement method |
-
2016
- 2016-11-28 CN CN201621285798.XU patent/CN206193282U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405732A (en) * | 2016-11-28 | 2017-02-15 | 广西大学 | Intersecting waveguide based on SOI material and manufacturing method thereof |
| CN114384628A (en) * | 2020-10-04 | 2022-04-22 | 上海交通大学 | Optical waveguide arrangement method |
| CN114384628B (en) * | 2020-10-04 | 2022-11-11 | 上海交通大学 | Optical waveguide arrangement method |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170524 |
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| CF01 | Termination of patent right due to non-payment of annual fee |