CN113050220A - Gradual change curved waveguide device - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
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Abstract
The present disclosure provides a tapered curved waveguide comprising: a substrate; a U-shaped waveguide on the substrate; a cladding layer at least partially covering the U-shaped waveguide; the U-shaped waveguide comprises two sections of L-shaped waveguides and a section of rectangular waveguide connected between the two sections of L-shaped waveguides, and the L shape is 90-degree Euler gradual change bending. The gradually-changed bent waveguide device provided by the disclosure can keep good single-mode transmission characteristics and ultralow transmission loss, is small in size, and can greatly improve the integration level of a photoelectric device, so that the cost is further reduced, and the gradually-changed bent waveguide device is suitable for large-scale mass production.
Description
Technical Field
The disclosure relates to the technical field of semiconductor photoelectricity, in particular to a gradual change curved waveguide device.
Background
With the increasing requirements of people on information transmission and processing speed and the coming of the multi-core computing era, electrical interconnection based on metal becomes a development bottleneck due to defects of overheating, delay, electronic interference and the like. And the problem can be effectively solved by adopting optical interconnection to replace electrical interconnection. Silicon-based optical interconnects are preferred for their incomparable cost and technical advantages in the implementation of optical interconnects. The silicon-based optical interconnection can not only play the advantages of high optical interconnection speed, large bandwidth, interference resistance, low power consumption and the like, but also fully utilize the advantages of mature microelectronic process, high-density integration, high yield, low cost and the like, and the development of a new generation of high-performance computer and data communication system is certainly promoted, so that the silicon-based optical interconnection has wide market application prospect.
Generally, the core technology of silicon-based optical interconnection is to implement various optical functional devices on silicon, such as a silicon-based laser, an electro-optical modulator, a photodetector, a filter, a wavelength division multiplexer, a coupler, an optical splitter, and the like. The basic structure of the device for realizing the functions is a silicon-based optical waveguide structure which comprises a straight waveguide and a bent waveguide. The curved waveguide can be connected with a non-collinear optical element, so that light beam separation is realized, and the integration level is improved; the waveguide structure can be used as a part of an active or passive device structure to realize self special functions, for example, a specially designed curved waveguide structure can be used for obtaining a micro-ring resonant cavity structure with high Q value, single mode and low loss transmission.
In the design of integrated photonic circuits, a curved waveguide causes significant coupling between different modes, specifically, only a fundamental mode initially exists in a straight waveguide at the front end of the curved waveguide, and after transmission through the curved waveguide, a higher-order mode (HOM) is generally excited at the output end of the curved waveguide, and the higher the curvature 1/R (the bending radius R) of the curve is, the more serious the higher-order mode excitation is. To obtain a small-sized, low-loss, and good single-mode retention curved waveguide, it is necessary to require that the curved waveguide be single-mode transmission. This benefits from the ability of single mode curved waveguides to effectively reduce scattering losses and avoid inter-mode crosstalk at bends.
At present, a method for realizing a small-sized, single-mode, low-loss curved waveguide is to limit light in a submicron waveguide structure with a High refractive Index difference (HIC), and the waveguide structure should be smaller when the refractive Index difference is higher, so as to ensure single-mode transmission. The implementation of dense integration using sub-micron waveguides can lead to problems including polarization dependence, low coupling efficiency of fiber mode, scattering loss due to roughness, etc., and in addition, sub-micron waveguide devices require more advanced fabrication processes to solve processing errors due to nano-features; there are also some researchers trying to reduce the transmission loss by changing the width of the curved waveguide, but the effect is not ideal, the obtained curved radius is still quite large, actually two orders of magnitude larger than the width of the straight waveguide, and meanwhile, a special preparation process (such as gray scale lithography) is required, which increases the process difficulty.
Therefore, it is necessary to provide a tapered waveguide device with single-mode ultra-low loss transmission to solve the problems of large transmission loss, severe crosstalk between modes, and the like in the conventional curved waveguide.
Disclosure of Invention
It is an object of the present disclosure to provide a tapered curved waveguide device that enables ultra-low transmission loss, small size and very low high order mode excitation ratio.
The disclosed embodiment provides a tapered curved waveguide device, including:
a substrate;
a U-shaped waveguide on the substrate;
a cladding layer at least partially covering the U-shaped waveguide;
the U-shaped waveguide comprises two sections of L-shaped waveguides and a section of rectangular waveguide connected between the two sections of L-shaped waveguides, and the L shape is 90-degree Euler gradual change bending.
According to some embodiments of the present disclosure, two sections of L-shaped waveguides of the U-shaped waveguide are symmetrical to each other, two ends of the L-shaped waveguide are respectively a gradual change initial end and a gradual change end, and the gradual change end is connected to one end of the rectangular waveguide.
According to some embodiments of the present disclosure, the L-shaped waveguide comprises two curves, an inner profile curve and an outer profile curve, and a curvature radius of the outer profile curve is obtained based on euler curve formula;
the inner contour curve is composed of a series of points corresponding to the outer contour curve one by one, the distance from a point on the inner contour curve to a point on the outer contour curve corresponding to the point on the inner contour curve gradually changes from a first value to a second value according to the direction from the initial end of gradual change to the end of gradual change, and the first value is larger than the second value;
the euler curve formula is:
wherein, R is the curvature radius of the curve, and L is the arc length of the curve from the initial gradual change end to a certain specific point; θ is the angle of the curve at a certain point; a is a specific constant, equal to [ L ]total/(1/Rmin-1/Rmax)]1/2，LtotalIs the total length of the curve, RmaxIs the maximum radius of curvature, R, of the curveminIs the minimum radius of curvature of the curve.
According to some embodiments of the present disclosure, the radius of curvature of the outer contour curve increases from R with increasing arc length LmaxContinuously decrease to Rmin。
According to some embodiments of the disclosure, the first value is 1.6um and the second value is 0.45 um.
According to some embodiments of the present disclosure, the total length L of the outer contour curvetotalIs 50um, maximum curvature radius RmaxIs 900um, minimum radius of curvature RminIs 20 um.
According to some embodiments of the present disclosure, the rectangular waveguide has a height of 0.22um, a width of 0.45um, and a length of 2 um.
According to some embodiments of the present disclosure, the height of the L-shaped waveguide is 0.22 um.
According to some embodiments of the disclosure, the substrate comprises: the U-shaped waveguide comprises a silicon substrate and a buried oxide layer on the silicon substrate, wherein the U-shaped waveguide is positioned on the buried oxide layer.
According to some embodiments of the present disclosure, the U-shaped waveguide is made of silicon.
This disclosure compares advantage with prior art and lies in:
the gradually-changed bent waveguide device provided by the disclosure can keep good single-mode transmission characteristics and ultralow transmission loss, is small in size, and can greatly improve the integration level of a photoelectric device, so that the cost is further reduced, and the gradually-changed bent waveguide device is suitable for large-scale mass production.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the disclosure. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of a U-shaped waveguide in a tapered curved waveguide device provided by the present disclosure;
fig. 2 shows transmission loss results obtained at the output end after simulation of the tapered curved waveguide device provided by the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
In order to solve the problems in the prior art, embodiments of the present disclosure provide a tapered waveguide, which is described below with reference to the accompanying drawings.
Fig. 1 shows a schematic diagram of a U-shaped waveguide in a tapered waveguide device provided in the present disclosure, which may be any device capable of transmitting an optical signal, such as a silicon optical device, a germanium-silicon optical device, and the like. Silicon optical devices such as micro-ring resonator structures.
As shown in fig. 1, the present disclosure provides the above tapered curved waveguide device, including: a substrate (not shown); a U-shaped waveguide 10 on the substrate; and a cladding layer (not shown) at least partially covering the U-shaped waveguide;
the U-shaped waveguide 10 includes two L-shaped waveguides, as shown in fig. 1, an L-shaped waveguide 110 and an L-shaped waveguide 120, and a rectangular waveguide 130 connected between the two L-shaped waveguides, where the L-shape is a 90-degree euler gradual bend.
According to some embodiments of the present disclosure, two sections of L-shaped waveguides in the U-shaped waveguide 10 are symmetrical to each other, that is, the L-shaped waveguide 110 and the L-shaped waveguide 120 are symmetrical structures, and two ends of each section of L-shaped waveguide are a gradual change initial end and a gradual change ending end, respectively.
As shown in fig. 1, the tapered end of the L-shaped waveguide 110 is connected to one end of the rectangular waveguide 130, and the tapered end of the L-shaped waveguide 120 is connected to the other end of the rectangular waveguide 130.
The L-shaped waveguide comprises two curves, namely an inner contour curve and an outer contour curve, and the curvature radius of the outer contour curve is obtained based on an Euler curve formula; that is, the outer profile curve of the L-shaped waveguide in the present disclosure is designed based on euler's curve.
The inner contour curve is composed of a series of points corresponding to the outer contour curve one by one, the distance from a point on the inner contour curve to a point on the outer contour curve corresponding to the point on the inner contour curve gradually changes from a first value to a second value according to the direction from the initial end of gradual change to the end of gradual change, and the first value is larger than the second value;
the euler curve formula is:
wherein, R is the curvature radius of the curve, and L is the arc length of the curve from the initial gradual change end to a certain specific point; θ is the angle of the curve at a certain point; a is a specific constant, equal to [ L ]total/(1/Rmin-1/Rmax)]1/2，LtotalIs the total length of the curve, RmaxIs the maximum radius of curvature, R, of the curveminIs the minimum radius of curvature of the curve.
According to some embodiments of the present disclosure, the radius of curvature of the outer contour curve increases from R with increasing arc length LmaxContinuously decrease to Rmin。
According to some embodiments of the present disclosure, the first value is 1.6um, and the second value is 0.45um, that is, the distance from a point on the inner contour curve to a point on the outer contour curve corresponding thereto is gradually changed from 1.6um to 0.45um, thereby forming the L-shaped waveguide.
The width W of the tapered initial end of the L-shaped waveguide is preferably 1.6um, because the 1.6um wide curved waveguide end can reduce the transmission loss of the waveguide and meet the requirement of single-mode or multi-mode transmission. A cross-sectional view of a gradual start of 1.6um wide is shown in fig. 1.
The width of the gradual change end of the L-shaped waveguide is preferably 0.45um, because 0.45um can well ensure single-mode transmission and simultaneously achieve the effect of inhibiting a high-order mode.
According to some embodiments of the present disclosure, the total length L of the outer contour curvetotalPreferably 50um, maximum radius of curvature RmaxPreferably 900um, minimum radius of curvature RminPreferably 20 um.
According to some embodiments of the present disclosure, the rectangular waveguide preferably has a height H of 0.22um, a width W of 0.45um, and a length L of 2 um. This is because the rectangular waveguide having a length of 2um can maintain single-mode transmission while having a minimum transmission loss. A 2um long rectangular waveguide perspective view is shown in fig. 1.
According to some embodiments of the present disclosure, the L-shaped waveguide has a height H of 0.22 um.
Wherein the substrate comprises: the waveguide structure comprises a silicon substrate and a buried oxide layer on the silicon substrate, wherein the U-shaped waveguide 10 is located on the buried oxide layer, and the U-shaped waveguide can be made of silicon.
It should be understood that the substrate may be of SOI material, which is known as Silicon-On-Insulator, i.e., Silicon-On-Insulator, by introducing a buried oxide layer between the top Silicon and the back substrate. The SOI material has the following outstanding advantages: low power consumption; a low turn-on voltage; high speed; the integration level is improved; the method is completely compatible with the existing integrated circuit and reduces the process procedures; high temperature resistance; radiation resistance and thus reduced software errors. These advantages make SOI technology extremely versatile in most silicon-based integrated circuits.
The graded bend waveguide device is prepared by preferably adopting a standard SOI process, and comprises bottom silicon, an oxygen buried layer and top silicon, the top silicon is etched to obtain a U-shaped waveguide with the height of 0.22um, so that the monocrystalline silicon has lower absorption loss to light with the communication wavelength of 1330-1600 nm, and meanwhile, the processing process of the silicon-based optical waveguide has better compatibility with the mature COMS technology.
In the present disclosure, the gradual change initial end of the L-shaped waveguide 110 may serve as the input end of the U-shaped waveguide 10, and the gradual change ending end of the L-shaped waveguide 120 may serve as the output end of the U-shaped waveguide 10, or the gradual change initial end of the L-shaped waveguide 120 may serve as the input end of the U-shaped waveguide 10, and the gradual change ending end of the L-shaped waveguide 110 may serve as the output end of the U-shaped waveguide 10.
The MODE simulation test is performed with the fundamental MODE as input, preferably in the 1500nm-1600nm range, and the results at the output are shown in fig. 2. Has good integrity maintenance of the fundamental mode and suppression ratio of the high-order mode. In particular, a fundamental mode at 1550nm is selectedAfter the U-shaped waveguide is transmitted, the transmission loss is only 0.0005379dB, and the effective radius ReffOnly 42.547um (as shown in fig. 1), a small size, single mode, ultra low loss transmission performance is achieved.
In practical application, the gradually-changed curved waveguide device with continuously-changed curvature disclosed by the invention can be introduced into a micro-ring resonant cavity structure to replace the existing curved waveguide, so that the micro-ring resonant cavity structure can keep good single-mode transmission characteristics and ultralow transmission loss.
This disclosure compares advantage with prior art and lies in:
the gradually-changed bent waveguide device provided by the disclosure can keep good single-mode transmission characteristics and ultralow transmission loss, is small in size, and can greatly improve the integration level of a photoelectric device, so that the cost is further reduced, and the gradually-changed bent waveguide device is suitable for large-scale mass production.
One skilled in the art can also devise methods that are not exactly the same as those described above in order to form the same structure. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A tapered curved waveguide device, comprising:
a substrate;
a U-shaped waveguide on the substrate;
a cladding layer at least partially covering the U-shaped waveguide;
the U-shaped waveguide comprises two sections of L-shaped waveguides and a section of rectangular waveguide connected between the two sections of L-shaped waveguides, and the L shape is 90-degree Euler gradual change bending.
2. The tapered curved waveguide device according to claim 1, wherein two sections of L-shaped waveguides of the U-shaped waveguides are symmetrical to each other, two ends of the L-shaped waveguides are a tapered initial end and a tapered end respectively, and the tapered end is connected to one end of the rectangular waveguide.
3. The tapered waveguide device according to claim 2, wherein the L-shaped waveguide comprises two curves, an inner profile curve and an outer profile curve, and the curvature radius of the outer profile curve is obtained based on euler curve formula;
the inner contour curve is composed of a series of points corresponding to the outer contour curve one by one, the distance from a point on the inner contour curve to a point on the outer contour curve corresponding to the point on the inner contour curve gradually changes from a first value to a second value according to the direction from the initial end of gradual change to the end of gradual change, and the first value is larger than the second value;
the euler curve formula is:
wherein, R is the curvature radius of the curve, and L is the arc length of the curve from the initial gradual change end to a certain specific point; θ is the angle of the curve at a certain point; a is a specific constant, equal to [ L ]total/(1/Rmin-1/Rmax)]1/2，LtotalIs the total length of the curve, RmaxIs the maximum radius of curvature, R, of the curveminIs the minimum radius of curvature of the curve.
4. The tapered curved waveguide device of claim 3, wherein the radius of curvature of said outer profile curve increases from R with increasing arc length LmaxContinuously decrease to Rmin。
5. The tapered curved waveguide device of claim 4, wherein said first value is 1.6um and said second value is 0.45 um.
6. The tapered curved waveguide device of claim 5, wherein the overall length L of the outer profile curvetotalIs 50um, maximum curvature radius RmaxIs 900um, minimum radius of curvature RminIs 20 um.
7. The tapered curved waveguide device of claim 6, wherein said rectangular waveguide is 0.22um high, 0.45um wide and 2um long.
8. The tapered curved waveguide device of claim 7, wherein the height of the L-shaped waveguide is 0.22 um.
9. The tapered curved waveguide device of claim 1, wherein said substrate comprises: the U-shaped waveguide comprises a silicon substrate and a buried oxide layer on the silicon substrate, wherein the U-shaped waveguide is positioned on the buried oxide layer.
10. The tapered waveguide device of claim 9, wherein the U-shaped waveguide is made of silicon.
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| WO2024018540A1 (en) * | 2022-07-19 | 2024-01-25 | 日本電信電話株式会社 | Bent waveguide |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1464997A1 (en) * | 2003-04-04 | 2004-10-06 | ThreeFive Photonics B.V. | Integrated optical device comprising a bend waveguide |
| US20130170802A1 (en) * | 2012-01-03 | 2013-07-04 | Xyratex Technology Limited | Optical waveguide and a method for making an optical waveguide |
| CN103676215A (en) * | 2013-11-25 | 2014-03-26 | 中国计量学院 | Channel-shaped electricity and temperature dual-control terahertz wave switch |
| CN104781708A (en) * | 2012-10-18 | 2015-07-15 | Vttoy技术研究中心 | Bent optical waveguide |
| CN105826646A (en) * | 2016-05-12 | 2016-08-03 | 电子科技大学 | Multi-hole rectangular waveguide directional coupler |
| CN106461869A (en) * | 2014-12-11 | 2017-02-22 | 华为技术有限公司 | Micro-ring resonator |
| JP2017116862A (en) * | 2015-12-25 | 2017-06-29 | 株式会社豊田中央研究所 | Optical waveguide |
| CN110165554A (en) * | 2019-05-07 | 2019-08-23 | 太原理工大学 | Integrated chaos signal generator based on micro-loop waveguiding structure |
| CN214750917U (en) * | 2021-03-15 | 2021-11-16 | 中国科学院微电子研究所 | Gradual change curved waveguide device |
-
2021
- 2021-03-15 CN CN202110278389.6A patent/CN113050220A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1464997A1 (en) * | 2003-04-04 | 2004-10-06 | ThreeFive Photonics B.V. | Integrated optical device comprising a bend waveguide |
| US20130170802A1 (en) * | 2012-01-03 | 2013-07-04 | Xyratex Technology Limited | Optical waveguide and a method for making an optical waveguide |
| CN104781708A (en) * | 2012-10-18 | 2015-07-15 | Vttoy技术研究中心 | Bent optical waveguide |
| CN103676215A (en) * | 2013-11-25 | 2014-03-26 | 中国计量学院 | Channel-shaped electricity and temperature dual-control terahertz wave switch |
| CN106461869A (en) * | 2014-12-11 | 2017-02-22 | 华为技术有限公司 | Micro-ring resonator |
| JP2017116862A (en) * | 2015-12-25 | 2017-06-29 | 株式会社豊田中央研究所 | Optical waveguide |
| CN105826646A (en) * | 2016-05-12 | 2016-08-03 | 电子科技大学 | Multi-hole rectangular waveguide directional coupler |
| CN110165554A (en) * | 2019-05-07 | 2019-08-23 | 太原理工大学 | Integrated chaos signal generator based on micro-loop waveguiding structure |
| CN214750917U (en) * | 2021-03-15 | 2021-11-16 | 中国科学院微电子研究所 | Gradual change curved waveguide device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024018540A1 (en) * | 2022-07-19 | 2024-01-25 | 日本電信電話株式会社 | Bent waveguide |
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