CN206163490U - LED chip structure is pressed to rectangular form height - Google Patents
LED chip structure is pressed to rectangular form height Download PDFInfo
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- CN206163490U CN206163490U CN201621189645.5U CN201621189645U CN206163490U CN 206163490 U CN206163490 U CN 206163490U CN 201621189645 U CN201621189645 U CN 201621189645U CN 206163490 U CN206163490 U CN 206163490U
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Abstract
The utility model discloses a LED chip structure is pressed to rectangular form height, belong to emitting diode technical field, all chip subelement mutual isolations form long bar -type texture, the chip subelement is including being located a long bar -type texture left side, right side both ends just only have two luminous subelements on N type layer, still including being located between two not luminous subelements, two at least luminous subelements that have N electrode and P electrode simultaneously, be provided with the N electrode on the not luminous subelement, N electrode and P electrode series connection between the adjacent luminous subelement connect, N electrode P electrode and this end of the luminous subelement of high order end do not give out light, give off light the N electrode of subelement to be connected, and correspondingly, P electrode N electrode and this end of the luminous subelement of low order end do not give out light, give off light the N electrode of subelement to be connected. Reduce electric current crowding phenomenon's emergence, can improve electric current extension homogeneity effectively, increased substantially the luminous efficacy of LED chip.
Description
Technical field
The utility model belongs to LED technology field, is related to a kind of strip high voltage LED chip structure.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED), it can convert electrical energy into luminous energy, LED/light source
Belong to green light source, have the advantages that energy-conserving and environment-protective, life-span length, energy consumption are low, safety coefficient is high, be widely used in illuminating and carry on the back
Optical arena.High-voltage LED (HV LED) is that multiple LED grains are together in series so as to improve whole chip by metal interconnection technique
Voltage.High-voltage LED reduces driving cost, reduces encapsulation factory routing operation, is a very LED with market prospects
Product.At present, gallium nitride (GaN) base LED quickly grows, but the problem of current crowding can be produced in actual production, so as to drop
Low luminous efficiency.
The content of the invention
The utility model devises a kind of simple structure, can reduce current crowding to overcome the defect of prior art
Generation, improve LED chip luminous efficiency strip high voltage LED chip structure.
The concrete technical scheme that the utility model is taken is：A kind of strip high voltage LED chip structure, including substrate,
The one group of chip subelement arranged along its length on substrate epitaxial layer, the mutually isolated formation strip of all of chip subelement
Shape structure, it is important to：Described chip subelement includes being located at the left and right two ends of string configuration and only two with N-type layer
Do not light subelement, also includes that being located at two does not light between subelements, while at least two with N electrode and P electrode
Light subelement, on the subelement that do not light N electrode is provided with, and the N electrode and P electrode between adjacent luminous subelement is connected in series,
N electrode/the P electrode of the luminous subelement of high order end is connected with the N electrode of the luminous subelement in the end, and accordingly, low order end lights
P electrode/the N electrode of subelement is connected with the N electrode of the luminous subelement in the end.
The length and width ratio of the substrate is (10-50)：1.
Described luminous subelement is rectangular configuration, and length is 10-30mil, and width is 5-10mil.
It is rectangular configuration positioned at the N electrode not lighted on subelement, length is 230-270 μm, and width is 90-130 μm.
Spacing between adjacent chips subelement is 50-100 μm.
The beneficial effects of the utility model are：The subelement that do not light positioned at string configuration two ends only has N-type layer, its
Upper only N electrode, convenient encapsulation bonding wire, reduces the area of P electrode, can reduce the voltage of LED chip, two sons that do not light
It is the luminous subelement with N electrode and P electrode between unit, adjacent subunits are connected in series, this structural change P
Arrangement between electrode and N electrode, reduces to a certain extent the generation of current crowding phenomenon, can effectively improve electric current
Extension uniformity, is greatly improved the luminous efficiency of LED chip.
Description of the drawings
Fig. 1 is structural representation of the present utility model.
In accompanying drawing, 1 represents substrate, and 2 represent not luminous subelement, and 3 represent luminous subelement.
Specific embodiment
Below in conjunction with the accompanying drawings the utility model is elaborated with specific embodiment：
Specific embodiment, as shown in figure 1, a kind of strip high voltage LED chip structure, including substrate 1, in the extension of substrate 1
The one group of chip subelement arranged along its length on layer, the mutually isolated formation string configuration of all of chip subelement, core
Piece subelement includes being located at the left and right two ends of string configuration and only two with the N-type layer subelements 2 that do not light, also including position
Do not light in two between subelement 2, while at least two luminous subelements 3 with N electrode and P electrode, light subelement 3
For rectangular configuration, length is 10-30mil, and width is 5-10mil.Do not light and be provided with N electrode on subelement 2, positioned at not lighting
N electrode on subelement 2 is rectangular configuration, and length is 230-270 μm, and preferably 250 μm, width is 90-130 μm, preferably
110 μm, use for welded encapsulation, sufficiently large bonding area so that firm and reliable connection after welding, it is difficult for drop-off.Adjacent
N electrode and P electrode between light subelement 3 is connected in series, that is to say, that if the N electrode of certain luminous subelement 3 be located at
The P electrode of the luminous subelement 3 in its left side connects, then the P electrode of the luminous subelement 3 and the N for being located at the luminous subelement 3 in its right side
Electrode connects, and the N electrode of the luminous subelement 2 of the N electrode/P electrode of the luminous subelement 3 of high order end and the end is connected, accordingly,
P electrode/the N electrode of the luminous subelement 3 of low order end is connected with the N electrode of the luminous subelement 2 in the end.This structural change P
Arrangement between electrode and N electrode, reduces to a certain extent the generation of current crowding phenomenon, can effectively improve electric current
Extension uniformity, is greatly improved the luminous efficiency of LED chip.
The length and width ratio of substrate 1 is (10-50)：1, then the length and width ratio of chip structure is namely (10-50)：1, this chip
Structure goes out light due to the increase of lateral area, the side that can increase chip, and so as to improve whole high voltage LED chip structure light efficiency is gone out
Rate.Region beyond chip structure surface electrode is provided with the SiO that thickness is 100-1000 μm2Overcoat.
Spacing between adjacent chips subelement is too little, and the requirement to manufacture craft is too high, and percent defective is too high, causes cost
Higher, spacing is too big, then can reduce the quantity of finite length inner core piece subelement, so by adjacent core slice, thin piece list after considering
Spacing between unit is set to 50-100 μm, i.e., the luminous subelement 3 not lighted between subelement 2 and luminous subelement 3, adjacent
Between spacing be all 50-100 μm.
A kind of strip high voltage LED chip structure of the utility model design, by the area for reducing P-type electrode, reduces
The voltage of LED chip, changes the arrangement between P electrode and N electrode, reduces the generation of current crowding phenomenon, while should
Structure can effectively improve current expansion uniformity, so as to improve the light extraction efficiency of LED chip.
Claims (5)
1. a kind of strip high voltage LED chip structure, including substrate (1), arrange along its length on substrate (1) epitaxial layer
One group of chip subelement, the mutually isolated formation string configuration of all of chip subelement, it is characterised in that：Described chip
Unit includes being located at the left and right two ends of string configuration and only two with the N-type layer subelements (2) that do not light, and also includes being located at
Two do not light between subelement (2), while at least two luminous subelements (3) with N electrode and P electrode, do not light son
N electrode is provided with unit (2), the N electrode and P electrode between adjacent luminous subelement (3) is connected in series, the luminous son of high order end
The do not light N electrode of subelement (2) of the N electrode/P electrode of unit (3) and the end is connected, and accordingly, low order end lights subelement
(3) P electrode/N electrode is connected with the N electrode of the luminous subelement (2) in the end.
2. a kind of strip high voltage LED chip structure according to claim 1, it is characterised in that：The substrate (1)
Length and width ratio is (10-50)：1.
3. a kind of strip high voltage LED chip structure according to claim 1, it is characterised in that：Described luminous son is single
First (3) are rectangular configuration, and length is 10-30mil, and width is 5-10mil.
4. a kind of strip high voltage LED chip structure according to claim 1, it is characterised in that：It is single positioned at the son that do not light
N electrode on first (2) is rectangular configuration, and length is 230-270 μm, and width is 90-130 μm.
5. a kind of strip high voltage LED chip structure according to claim 1, it is characterised in that：Adjacent chips subelement
Between spacing be 50-100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621189645.5U CN206163490U (en) | 2016-11-04 | 2016-11-04 | LED chip structure is pressed to rectangular form height |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621189645.5U CN206163490U (en) | 2016-11-04 | 2016-11-04 | LED chip structure is pressed to rectangular form height |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206163490U true CN206163490U (en) | 2017-05-10 |
Family
ID=58657621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621189645.5U Active CN206163490U (en) | 2016-11-04 | 2016-11-04 | LED chip structure is pressed to rectangular form height |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206163490U (en) |
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2016
- 2016-11-04 CN CN201621189645.5U patent/CN206163490U/en active Active
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