CN206133346U - Power supply circuit - Google Patents
Power supply circuit Download PDFInfo
- Publication number
- CN206133346U CN206133346U CN201620970803.4U CN201620970803U CN206133346U CN 206133346 U CN206133346 U CN 206133346U CN 201620970803 U CN201620970803 U CN 201620970803U CN 206133346 U CN206133346 U CN 206133346U
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- oxide
- semiconductor
- metal
- circuit module
- power supply
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Abstract
The application discloses power supply circuit includes: main circuit module for produce output voltage, and adjust according to a sampled signal and a reference voltage output voltage, sampled signal is used for the sign output voltage, transient state reinforcing circuit module and main circuit module connects, is used for the basis sampled signal and the 2nd reference voltage adjust main circuit module's output impedance. This power supply circuit has increased the transient state reinforcing circuit module who comprises comparator, MOS pipe, transistor, has reduced main circuit module's load impedance to the transient response speed of system when the accelerating weight is changed to the heavy load by the underloading. Utilize load transient response response loop, improved power supply circuit's transient response speed.
Description
Technical field
This utility model is related to electronic circuit technology, relates more specifically to a kind of power supply circuits.
Background technology
Almost all of electronic circuit is required for a stable power supply, and it is maintained in the range of certain tolerance, to guarantee
When correct operation load transient changes, circuit can be responded rapidly to, and provide stable voltage for chip.Existing power supply circuits lead to
Resitstance voltage divider automatic detection output voltage is crossed, and error amplifier constantly adjusts current source so that output voltage stabilization is maintained in volume
Determine on voltage.
But in existing power supply circuits, due to the grid source of metal-oxide-semiconductor, between grid leak and drain-source, there is parasitic capacitance effect
Should, the time delay of its discharge and recharge the opening and deadline of M0S pipes, so as to have impact on power supply circuits load from carry clearly to
System's transient response speed during heavy duty change.
Utility model content
The purpose of this utility model is to provide a kind of power supply circuits for improving system's transient response speed, is increased using transient state
Strong circuit module, improves power supply circuits system's transient response speed when change is supported on.
According to this utility model embodiment, there is provided a kind of power supply circuits, including:Main circuit module, for producing output electricity
Pressure, and the output voltage is adjusted according to sampled signal and the first reference voltage, the sampled signal is used to characterize the output
Voltage;Transient state intensifier circuit module, and main circuit module connection, for according to the sampled signal and the second reference voltage
Adjust the output impedance of the main circuit module.
Preferably, the main circuit module includes the first metal-oxide-semiconductor, at least two sampling resistors and an error amplifier,
First metal-oxide-semiconductor and the sample circuit are connected in series between the input and earth terminal of the main circuit module, described
The outfan connection of the grid and error amplifier of the first metal-oxide-semiconductor, the input of the error amplifier receive described adopting respectively
Sample signal and first reference voltage, the outfan of the error amplifier are exported for controlling the first metal-oxide-semiconductor switch
Control signal.
Preferably, the transient state intensifier circuit module includes a comparator and the second metal-oxide-semiconductor, and second metal-oxide-semiconductor connects
The grid connection of the grid and earth terminal of first metal-oxide-semiconductor, the outfan of the comparator and second metal-oxide-semiconductor is connected on,
Two inputs of the comparator receive the sampled signal and the second reference voltage respectively, and the outfan of the comparator is defeated
Go out for controlling the control signal that second metal-oxide-semiconductor is switched.
Preferably, the transient state intensifier circuit module also includes the first transistor, the first transistor and the metal-oxide-semiconductor
Parallel circuit is constituted, the grid and the earth terminal of first metal-oxide-semiconductor is connected to.
Preferably, the transient state intensifier circuit module also includes constant-current source, the constant-current source and the first transistor structure
Into series circuit, and the metal-oxide-semiconductor constitutes the grid and the earth terminal for being connected in first metal-oxide-semiconductor in parallel.
Preferably, first metal-oxide-semiconductor and second metal-oxide-semiconductor are NMOS tubes, and the first transistor is managed for NPN.
The power supply circuits increased the transient state intensifier circuit module being made up of comparator, metal-oxide-semiconductor, transistor, reduce master
The load impedance of circuit module, so as to accelerating weight by underloading to system's transient response speed during heavy duty change.Using load
Transient response responds loop, improves the transient response speed of power supply circuits.
Description of the drawings
By description referring to the drawings to this utility model embodiment, of the present utility model above-mentioned and other mesh
, feature and advantage will be apparent from, in the accompanying drawings:
Fig. 1 illustrates the schematic circuit of the power supply circuits according to this utility model embodiment.
Specific embodiment
Various embodiments of the present utility model are more fully described hereinafter with reference to accompanying drawing.In various figures, identical
Element is represented using same or similar reference.For the sake of clarity, the various pieces in accompanying drawing are not drawn to paint
System.
With reference to the accompanying drawings and examples this utility model is further illustrated.
Fig. 1 illustrates the schematic circuit of the power supply circuits according to this utility model embodiment.The power supply circuits include master
Circuit module 101 and transient state intensifier circuit module 102.
Main circuit module 101 provides output voltage Vout to load, during output voltage is provided, obtains output electricity
The sampled signal of pressure, according to sampled signal VFBWith reference voltage Vref _ 0 adjust output voltage Vout, make output voltage Vout to
Load provides stable power supply.
Transient state intensifier circuit module 102 and main circuit module 101 connect, according to sampled signal VFB and reference voltage Vref _
1 output impedance for adjusting main circuit module 101.
With reference to Fig. 1, main circuit module 101 includes metal-oxide-semiconductor MP, sampling resistor RF1、RF2With error amplifier ErrorAmp.
Metal-oxide-semiconductor MP is, for example, NMOS tube.Metal-oxide-semiconductor MP and sampling resistor RF1、RF2It is connected in series in the power input of main circuit module 101
End VIN and earth terminal GND, the outfan connection of the grid and error amplifier ErrorAmp of metal-oxide-semiconductor MP, error amplifier
Output voltages of the inverting input Vref_0 of ErrorAmp for bandgap voltage reference, in-phase input end VFBIt is to utilize resistance string
RF1、RF2The sampled signal carried out by output voltage Vout.ErrorAmp is by sampled signal VFBCompare with reference voltage Vref _ 0 and put
After big, export for controlling the control signal of metal-oxide-semiconductor MP.Reference voltage Vref _ 0 is for example set as the rated voltage for loading.Cause
This, is operationally, if the electric current needed for the load of the connection of main circuit module 101 changes, the sampling letter of output voltage
Number VFBCan also change, so as to affect the control signal (figure is not exported) of error amplifier ErrorAmp outputs, the control is believed
Number for controlling the conducting of metal-oxide-semiconductor MP, so as to produce the electric current for meeting load request.
Transient state intensifier circuit module 102 includes comparator COM and metal-oxide-semiconductor MP1.Metal-oxide-semiconductor MP is, for example, PMOS.Metal-oxide-semiconductor
MP is connected to the grid of metal-oxide-semiconductor MP and earth terminal GND, the grid connection of the outfan and metal-oxide-semiconductor MP of comparator COM, comparator
Output voltages (Vref_1 from Vref_0 different) of the end of oppisite phase Vref_1 of COM for bandgap voltage reference, its homophase terminate VFB。
As long as VFBVoltage is less than Vref_1 voltages, and comparator COM exports high level.The voltage makes MP1 turn on and produce electric current, makes
The electric charge of the parasitic gate electric capacity of metal-oxide-semiconductor MP is released rapidly, so as to accelerate to reduce the grid voltage of metal-oxide-semiconductor MP.
Further, as shown in figure 1, transient state intensifier circuit module 102 increases transistor Q1, by metal-oxide-semiconductor MP1 and transistor
The parallel circuit that Q1 is constituted is connected between comparator COM and metal-oxide-semiconductor MP, and the parallel feedback constituted using MP1, Q1 realizes impedance
Decay, reduces output resistance, makes the grid limit of metal-oxide-semiconductor MP1 far beyond the unit gain frequency of circuit, improve electricity
The stability on road.
Further, as shown in figure 1, transient state intensifier circuit module also includes constant-current source Is, constant-current source Is and transistor Q1
Series circuit is constituted, and metal-oxide-semiconductor MP1 is connected in the grid and earth terminal GND of metal-oxide-semiconductor MP in parallel.
The power supply circuits that this utility model is provided increased the transient state intensifier circuit being made up of comparator, metal-oxide-semiconductor, transistor
Module, reduces the load impedance of main circuit module, so as to accelerating weight by underloading to system's transient response during heavy duty change
Speed.Loop is responded using load transient response, the transient response speed of power supply circuits is improve.
According to embodiment of the present utility model as described above, these embodiments do not have all of details of detailed descriptionthe,
Also it is only described specific embodiment not limit the utility model.Obviously, as described above, many modifications and change can be made
Change.These embodiments are chosen and specifically described to this specification, is to preferably explain that principle of the present utility model and reality should
With so that skilled artisan can repairing using this utility model and on the basis of this utility model well
Change use.The scope that protection domain of the present utility model should be defined by this utility model claim is defined.
Claims (6)
1. a kind of power supply circuits, it is characterised in that include:
Main circuit module, for producing output voltage, and adjusts the output voltage according to sampled signal and the first reference voltage;
Transient state intensifier circuit module, and main circuit module connection, for according to the sampled signal and the second reference voltage
Parasitic gate electric capacity is reduced,
Wherein, the sampled signal characterizes the output voltage.
2. power supply circuits according to claim 1, it is characterised in that the main circuit module includes the first metal-oxide-semiconductor, at least
Two sampling resistors and an error amplifier, first metal-oxide-semiconductor and the sample circuit are connected in series in the main circuit
Between the input and earth terminal of module, the outfan connection of the grid and error amplifier of first metal-oxide-semiconductor, the error
The input of amplifier receives the sampled signal and first reference voltage respectively, and the outfan of the error amplifier is defeated
Go out for controlling the control signal that first metal-oxide-semiconductor is switched.
3. power supply circuits according to claim 2, it is characterised in that the transient state intensifier circuit module includes that is compared
Device and the second metal-oxide-semiconductor, second metal-oxide-semiconductor are connected to the grid and earth terminal of first metal-oxide-semiconductor, the output of the comparator
The grid of end and second metal-oxide-semiconductor connects, and two inputs of the comparator receive the sampled signal and second respectively
Reference voltage, the outfan of the comparator are exported for controlling the control signal that second metal-oxide-semiconductor is switched.
4. power supply circuits according to claim 3, it is characterised in that first metal-oxide-semiconductor and second metal-oxide-semiconductor are
PMOS.
5. power supply circuits according to claim 3, it is characterised in that the transient state intensifier circuit module is also brilliant including first
Body pipe, the first transistor and second metal-oxide-semiconductor constitute parallel circuit, are connected to the grid of first metal-oxide-semiconductor and connect
Ground terminal.
6. power supply circuits according to claim 5, it is characterised in that the transient state intensifier circuit module also includes constant current
Source, the constant-current source and second metal-oxide-semiconductor constitute series circuit, and the series circuit and the first transistor are connected in parallel
In the grid and the earth terminal of first metal-oxide-semiconductor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620970803.4U CN206133346U (en) | 2016-08-29 | 2016-08-29 | Power supply circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620970803.4U CN206133346U (en) | 2016-08-29 | 2016-08-29 | Power supply circuit |
Publications (1)
Publication Number | Publication Date |
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CN206133346U true CN206133346U (en) | 2017-04-26 |
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CN201620970803.4U Active CN206133346U (en) | 2016-08-29 | 2016-08-29 | Power supply circuit |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112732000A (en) * | 2021-01-26 | 2021-04-30 | 灿芯半导体(上海)有限公司 | Novel transient response enhanced LDO |
CN113946176A (en) * | 2020-07-15 | 2022-01-18 | 上海江波龙微电子技术有限公司 | Memory and power supply voltage generating circuit thereof |
-
2016
- 2016-08-29 CN CN201620970803.4U patent/CN206133346U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113946176A (en) * | 2020-07-15 | 2022-01-18 | 上海江波龙微电子技术有限公司 | Memory and power supply voltage generating circuit thereof |
CN112732000A (en) * | 2021-01-26 | 2021-04-30 | 灿芯半导体(上海)有限公司 | Novel transient response enhanced LDO |
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