CN206127396U - Light shield structure suitable for organic light-emitting diode evaporation process - Google Patents
Light shield structure suitable for organic light-emitting diode evaporation process Download PDFInfo
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- CN206127396U CN206127396U CN201620916617.2U CN201620916617U CN206127396U CN 206127396 U CN206127396 U CN 206127396U CN 201620916617 U CN201620916617 U CN 201620916617U CN 206127396 U CN206127396 U CN 206127396U
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- 238000000034 method Methods 0.000 title claims abstract description 8
- 238000001704 evaporation Methods 0.000 title abstract description 6
- 230000008020 evaporation Effects 0.000 title abstract description 6
- 230000001343 mnemonic effect Effects 0.000 claims description 53
- 238000005530 etching Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
A light shield structure suitable for an organic light emitting diode evaporation process comprises a light shield body and four alignment mark groups, wherein the four alignment mark groups respectively correspond to four image capturing devices and respectively comprise a main mark and an auxiliary mark, each auxiliary mark and each main mark are respectively arranged on the light shield body, each auxiliary alignment mark is adjacent to the corresponding main mark, a reference line is defined between each auxiliary alignment mark and the corresponding main alignment mark, the tolerance of the length of each reference line is smaller than a length precision value, and the tolerance of an angle between the reference line and one side defined by the two main marks is smaller than an angle precision value.
Description
Technical field
The utility model is related to a kind of photomask structure, and more particularly to one kind is useful in Organic Light Emitting Diode processing procedure and can use
With the photomask structure of the positioning precision of correcting image capture module.
Background technology
In the evaporation processing procedure of Organic Light Emitting Diode, mainly the light shield with opening is arranged on into substrate front, with
The light emitting molecule after vaporization is set to be attached on substrate by the opening on light shield, to enable light emitting molecule to be attached to base exactly
On plate, the aligning accuracy between light shield and substrate needs to reach 1 micron (μm).When being intended to carry out light shield and base using image acquisition module
During contraposition between plate, due to having assembly error (i.e. each image of image acquisition module between image acquisition module and evaporation board
The set location and orientation of capture device are simultaneously asymmetric) so that the aligning accuracy between light shield and substrate is unable to reach requirement, enters
And causing product yield to reduce, manufacturing cost rises.
Utility model content
Therefore, the purpose of this utility model is to provide one kind to be useful in Organic Light Emitting Diode evaporation processing procedure and may be used to
The photomask structure of the positioning precision of an image acquisition module is corrected, to solve the above problems.
To reach above-mentioned purpose, the utility model discloses a kind of photomask structure, includes a smooth cover body, one first contraposition
Token groups, one second contraposition token groups, one the 3rd contraposition token groups and one the 4th contraposition token groups, the first contraposition mark
Organize one first image capturing device of one image acquisition module of correspondence and comprising one first main cues and one first auxiliary note
Number, first main cues are arranged on the smooth cover body, and first mnemonic mark is arranged on the smooth cover body
And neighbouring first main cues, the second contraposition token groups are comprising one second main cues, second main cues
It is arranged on the smooth cover body, the 3rd contraposition token groups include one the 3rd main cues, and the 3rd main cues set
Put on the smooth cover body, the 4th contraposition token groups include one the 4th main cues, and the 4th main cues are arranged
On the smooth cover body, a first side is defined between the described first main contraposition mark and the second main contraposition mark,
A second side, the described 3rd main contraposition note are defined between the described second main contraposition mark and the 3rd main contraposition mark
One the 3rd side is defined between number contraposition mark main with the described 4th, the described 4th main contraposition mark is main with described first right
A four side is defined between the mark of position, between the first auxiliary para mark and the first main contraposition mark one first is defined
Reference line, forms a first angle, the public affairs of the length of first reference line between first reference line and the four side
Difference is less than a length accuracy value, and the tolerance of the first angle is less than an angle precision value.
According to one of the utility model embodiment, first main cues are respectively with first mnemonic mark
Two circular marks, first main cues have the one first main center of circle and one first primary diameters, first auxiliary
Mark have one first auxiliary the center of circle and one first auxiliary diameter, first reference line be by the described first main center of circle with
The first auxiliary center of circle defines the tolerance and the length of the described first auxiliary diameter of the length of first primary diameters
Tolerance is respectively less than the first length longitude.
According to one of the utility model embodiment, first main cues are a circular mark, and described first is auxiliary
Mnemonic(al) number is a square mark, and first main cues have the one first main center of circle and one first primary diameters, institute
The first mnemonic mark is stated with one first sectional center and the one first auxiliary length of side, first reference line is by described first
The main center of circle is defined with first sectional center, and the tolerance of the length of first primary diameters and described first aids in side
The tolerance of long length is respectively less than the first length longitude.
According to one of the utility model embodiment, described second aligns the token groups correspondence image acquisition module
One second image acquisition module and also include one second mnemonic mark, second mnemonic mark is arranged on the smooth cover body
Upper and neighbouring second main cues, define one the between the second auxiliary para mark and the second main contraposition mark
Two reference lines, form a second angle between second reference line and the second side, the length of second reference line
Tolerance is less than the length accuracy value, and the tolerance of the second angle is less than the angle precision value.
According to one of the utility model embodiment, second main cues are respectively with second mnemonic mark
Two circular marks, second main cues have the one second main center of circle and one second primary diameters, second auxiliary
Mark have one second auxiliary the center of circle and one second auxiliary diameter, second reference line be by the described second main center of circle with
Described second aids in the center of circle to be defined, the length of the tolerance of the length of second primary diameters and the described second auxiliary diameter
Tolerance is respectively less than the first length longitude.
According to one of the utility model embodiment, second main cues are a circular mark, and described second is auxiliary
Mnemonic(al) number is a square mark, and second main cues have the one second main center of circle and one second primary diameters, institute
The second mnemonic mark is stated with one second sectional center and the one second auxiliary length of side, second reference line is by described second
The main center of circle is defined with second sectional center, and the tolerance of the length of second primary diameters and described second aids in side
The tolerance of long length is respectively less than the first length longitude.
According to one of the utility model embodiment, the described 3rd aligns the token groups correspondence image acquisition module
One the 3rd image acquisition module and also include one the 3rd mnemonic mark, second mnemonic mark is arranged on the smooth cover body
Upper and neighbouring 3rd main cues, define one the between the 3rd auxiliary para mark and the 3rd main contraposition mark
Three reference lines, form a third angle between the 3rd reference line and the second side, the length of the 3rd reference line
Tolerance is less than the length accuracy value, and the tolerance of the third angle is less than the angle precision value.
According to one of the utility model embodiment, the 3rd main cues are respectively with the 3rd mnemonic mark
Two circular marks, the 3rd main cues have one the 3rd main center of circle and one the 3rd primary diameters, the 3rd auxiliary
Mark have one the 3rd auxiliary the center of circle and one the 3rd auxiliary diameter, the 3rd reference line be by the 3rd main center of circle with
Described 3rd aids in the center of circle to be defined, the length of the tolerance of the length of the 3rd primary diameters and the described 3rd auxiliary diameter
Tolerance is respectively less than the first length longitude.
According to one of the utility model embodiment, the 3rd main cues are a circular mark, and the described 3rd is auxiliary
Mnemonic(al) number is a square mark, and the 3rd main cues have one the 3rd main center of circle and one the 3rd primary diameters, institute
The 3rd mnemonic mark is stated with one the 3rd sectional center and one the 3rd auxiliary length of side, the 3rd reference line is by the described 3rd
The main center of circle is defined with the 3rd sectional center, and the tolerance of the length of the 3rd primary diameters and the described 3rd aids in side
The tolerance of long length is respectively less than the first length longitude.
According to one of the utility model embodiment, the described 4th aligns the token groups correspondence image acquisition module
One the 4th image acquisition module and also include one the 4th mnemonic mark, the 4th mnemonic mark is arranged on the smooth cover body
Upper and neighbouring 4th main cues, define one the between the 4th auxiliary para mark and the 4th main contraposition mark
Four reference lines, form a fourth angle between the 4th reference line and the four side, the length of the 4th reference line
Tolerance is less than the length accuracy value, and the tolerance of the fourth angle is less than the angle precision value.
According to one of the utility model embodiment, the 4th main cues are respectively with the 4th mnemonic mark
Two circular marks, the 4th main cues have one the 4th main center of circle and one the 4th primary diameters, the 4th auxiliary
Mark have one the 4th auxiliary the center of circle and one the 4th auxiliary diameter, the 4th reference line be by the 4th main center of circle with
Described 4th aids in the center of circle to be defined, the length of the tolerance of the length of the 4th primary diameters and the described 4th auxiliary diameter
Tolerance is respectively less than the first length longitude.
According to one of the utility model embodiment, the 4th main cues are a circular mark, and the described 4th is auxiliary
Mnemonic(al) number is a square mark, and the 4th main cues have one the 4th main center of circle and one the 4th primary diameters, institute
The 4th mnemonic mark is stated with one the 4th sectional center and one the 4th auxiliary length of side, the 4th reference line is by the described 4th
The main center of circle is defined with the 4th sectional center, and the tolerance of the length of the 4th primary diameters and the described 4th aids in side
The tolerance of long length is respectively less than the first length longitude.
According to one of the utility model embodiment, the described first main contraposition mark, the described second main contraposition note
Number, the described 3rd main contraposition mark, the described 4th main contraposition mark, the first auxiliary para mark, second auxiliary it is right
Position mark, the 3rd auxiliary para mark are formed in the light in the way of etching respectively with the 4th auxiliary para mark
On cover body.
According to one of the utility model embodiment, the first angle, the second angle, the third angle with
The fourth angle is in 90 degree.
In sum, photomask structure of the present utility model is right using the first auxiliary para mark, second auxiliary
Position mark, the 3rd auxiliary para mark judge with the 4th auxiliary para mark first image capturing device,
Second image capturing device, the 3rd image capturing device are with the 4th image capturing device relative to the light shield
The position of structure and angle, with rapidly and accurately correct first image capturing device, second image capture
Equipment, the 3rd image capturing device and the 4th image capturing device, and then lifted using first image capture
Equipment, second image capturing device, the 3rd image capturing device align light with the 4th image capturing device
The precision of cover structure and substrate.About of the present utility model aforementioned and other technology contents, feature and effect, following ginseng is coordinated
In examining the detailed description of accompanying drawing embodiment, can clearly present.
Description of the drawings
Fig. 1 is the schematic diagram of the utility model first embodiment board.
Fig. 2 is the schematic diagram of the utility model first embodiment photomask structure.
Fig. 3 is schematic diagram of the utility model first embodiment board in correcting image capture module.
The schematic diagram of the image that Fig. 4 is captured by the image capturing device of the utility model first embodiment first.Fig. 5 is this
The schematic diagram of the image that the image capturing device of utility model first embodiment second is captured.Fig. 6 is that the utility model first is real
Apply the schematic diagram of the image that the image capturing device of example the 3rd is captured.Fig. 7 catches for the image of the utility model first embodiment the 4th
The schematic diagram of the image that the equipment of obtaining is captured.Fig. 8 is the schematic diagram of the utility model second embodiment photomask structure.
Wherein, description of reference numerals is as follows：
1 board
11 housings
12 chambers
13 image acquisition modules
14 control modules
2nd, 2 ' photomask structure
20 smooth cover bodies
200 openings
21 first contraposition token groups
211 first main cues
212nd, 212 ' first mnemonic mark
22 second contraposition token groups
221 second main cues
222nd, 222 ' second mnemonic mark
23 the 3rd contraposition token groups
231 the 3rd main cues
232nd, 232 ' the 3rd mnemonic mark
24 the 4th contraposition token groups
241 the 4th main cues
242nd, 242 ' the 4th mnemonic mark
3 substrates
4 light emitting molecules
L1 first sides
L2 second sides
The sides of L3 the 3rd
L4 four sides
The reference lines of M1 first
The reference lines of M2 second
The reference lines of M3 the 3rd
The reference lines of M4 the 4th
The main centers of circle of OM1 first
The main centers of circle of OM2 second
The main centers of circle of OM3 the 3rd
The main centers of circle of OM4 the 4th
The primary diameters of DM1 first
The primary diameters of DM2 second
The primary diameters of DM3 the 3rd
The primary diameters of DM4 the 4th
OA1 first aids in the center of circle
OA2 second aids in the center of circle
OA3 the 3rd aids in the center of circle
OA4 the 4th aids in the center of circle
The sectional centers of OA1 ' first
The sectional centers of OA2 ' second
The sectional centers of OA3 ' the 3rd
The sectional centers of OA4 ' the 4th
DA1 first aids in diameter
DA2 second aids in diameter
DA3 the 3rd aids in diameter
DA4 the 4th aids in diameter
DA1 ' first aids in the length of side
DA2 ' second aids in the length of side
DA3 ' the 3rd aids in the length of side
DA4 ' the 4th aids in the length of side
The first angles of θ 1
The second angles of θ 2
The third angles of θ 3
The fourth angles of θ 4
(M1x,M1y)、(M2x,M2y)、(M3x,M3y)、(M4x,M4y)、(A1x,A1y)、(A2x,A2y)、(A3x,
A3y), (A4x, A4y) coordinate
Specific embodiment
The direction term being previously mentioned in following examples, for example：Upper and lower, left and right, front or rear etc., are only with reference to additional attached
The direction of figure.Therefore, the direction term for using is for illustrating not for limiting the utility model.Fig. 1 is referred to, Fig. 1 is
The schematic diagram of the board 1 of the utility model first embodiment one.Board 1 be using a photomask structure 2 by a light emitting molecule 4 be deposited with
One substrate 3, board 1 includes a housing 11, a chamber 12, an image acquisition module 13 and a control module 14, chamber 12
It is formed in housing 11, to accommodating photomask structure 2 and substrate 3, image acquisition module 13 includes the capture of one first image and sets
Standby 131, one second image capturing device 132, one the 3rd image capturing device 133 and one the 4th image capturing device 134.The
One image capturing device 131, the second image capturing device 132, the 3rd image capturing device 133 and the 4th image capturing device
134 are separately mounted on housing 11, and to the contraposition for carrying out photomask structure 2 and substrate 3, control module 14 is coupled to the first image
Capture device 131, the second image capturing device 132, the 3rd image capturing device 133 and the 4th image capturing device 134, and use
Caught with the 4th image with correcting the first image capturing device 131, the second image capturing device 132, the 3rd image capturing device 133
Obtain equipment 134.In the present embodiment, board 1 is used in being deposited with Organic Light Emitting Diode (Organic Light-Emitting
Diode, OLED), and the first image capturing device 131, the second image capturing device 132, the 3rd image capturing device 133 and
4th image capturing device 134 is separately positioned on four corners of housing 11, and the utility model is not limited to this.
Fig. 2 is referred to, Fig. 2 is the schematic diagram of the utility model first embodiment photomask structure 2.Photomask structure 2 includes
The contraposition token groups 21 of one smooth cover body 20, one first, the one second contraposition contraposition of token groups 22, the 3rd token groups 23 and 1 the
Four contraposition token groups 24, are formed with least one opening 200, so that light emitting molecule 4 is attached to through opening 200 on light cover body 20
On substrate 3, the first contraposition token groups 21 include one first main cues 211 and one first mnemonic mark 212, the first main note
Numbers 211 are arranged on light cover body 20, and the first mnemonic mark 212 is arranged on light cover body 20 and neighbouring first main cues
211, the second contraposition token groups 22 are comprising one second main cues 221 and one second mnemonic mark 222, the second main cues
221 are arranged on light cover body 20, and the second mnemonic mark 222 is arranged on light cover body 20 and neighbouring second main cues 221,
Comprising one the 3rd main cues 231 and one the 3rd mnemonic mark 232, the 3rd main cues 231 set 3rd contraposition token groups 23
Put on light cover body 20, the 3rd mnemonic mark 232 is arranged on light cover body 20 and neighbouring 3rd main cues 231, the 4th
Contraposition token groups 24 include one the 4th main cues 241 and one the 4th mnemonic mark 242, and the 4th main cues 241 are arranged on
On light cover body 20, the 4th mnemonic mark 242 is arranged on light cover body 20 and neighbouring 4th main cues 241.In this enforcement
In example, the first main contraposition mark 211, second mainly aligns mark the 221, the 3rd, and mainly contraposition mark the 231, the 4th is mainly aligned
Mark 241, the first auxiliary para mark 212, the second auxiliary para mark 222, the 3rd auxiliary para mark 232 and the 4th auxiliary
Contraposition mark 242 is formed on light cover body 20 respectively in the way of etching.
First main contraposition mark 211 and second mainly defines a first side L1 between contraposition mark 221, second is main right
Position mark 221 and the 3rd mainly defines a second side L2 between contraposition mark 231, the 3rd main contraposition mark 231 and the 4th is led
Align and define between mark 241 one the 3rd side L3, the 4th main contraposition mark 241 and first is mainly fixed between contraposition mark 211
One four side L4 of justice, between the first auxiliary para mark 212 and the first main contraposition mark 211 one first reference line M1 is defined,
One second reference line M2, the 3rd auxiliary para mark are defined between the second auxiliary para mark 222 and the second main contraposition mark 221
232 and the 3rd mainly define one the 3rd reference line M3 between contraposition mark 231, the 4th auxiliary para mark 242 is main with the 4th right
One the 4th reference line M4 is defined between the mark 241 of position.
In this embodiment, the first main contraposition mark 211, second mainly aligns the mainly contraposition mark of mark the 221, the 3rd
231st, the 4th main contraposition mark 241, the first auxiliary para mark 212, the second auxiliary para mark 222, the 3rd auxiliary para
The auxiliary para mark 242 of mark 232 and the 4th is circular mark.Therefore, the first main contraposition mark 211 is main with one first
Center of circle OM1 and one first primary diameters DM1, the first auxiliary para mark 212 has one first auxiliary center of circle OA1 and 1 the
One auxiliary diameter DA1, the second main contraposition mark 221 has one second main center of circle OM2 and one second primary diameters DM2,
Second auxiliary para mark 222 has one second auxiliary center of circle OA2 and one second auxiliary diameter DA2, the 3rd main contraposition note
Numbers 231 have one the 3rd main center of circle OM3 and one the 3rd primary diameters DM3, and the 3rd auxiliary para mark 232 has one the 3rd
The auxiliary diameter DA3 of auxiliary center of circle OA3 and the 3rd, the 4th main contraposition mark 241 have one the 4th main center of circle OM4 and
One the 4th primary diameters DM4, the 4th auxiliary para mark 242 has one the 4th auxiliary center of circle OA4 and one the 4th auxiliary diameter
DA4.The first reference line M1, the first reference line M1 and four side are defined between the auxiliary center of circle OA1 of the first main center of circle OM1 and first
First angle θ 1 is formed between L4, first angle θ 1 is in 90 degree, defined between the auxiliary center of circle OA2 of the second main center of circle OM2 and second
Second reference line M2, forms second angle θ 2 between the second reference line M2 and second side L2, second angle θ 2 is in 90 degree, the 3rd
The 3rd reference line M3 is defined between the main auxiliary of center of circle OM3 and the 3rd center of circle OA3, is formed between the 3rd reference line M3 and second side L2
One third angle θ 3, third angle θ 3 is in 90 degree, defines the 4th between the auxiliary center of circle OA4 of the 4th main center of circle OM4 and the 4th and refers to
Line M4, forms fourth angle θ 4 between the 4th reference line M4 and four side L4, fourth angle θ 4 is in 90 degree, and the utility model
It is not limited to this embodiment.
It should be noted that the first reference line M1, the second reference line M2, the 3rd reference line M3, the 4th reference line M4, first
Primary diameters DM1, the second primary diameters DM2, the 3rd primary diameters DM3, the 4th primary diameters DM4, first auxiliary diameter DA1,
The tolerance of the length of the second auxiliary diameter DA2, the 3rd auxiliary diameter DA3 and the 4th auxiliary diameter DA4 is less than a length accuracy value,
The tolerance of folded angle is less than an angle precision value between the first reference line M1 and four side L4, and in the present embodiment, is
Reach Organic Light Emitting Diode evaporation processing procedure required by precision (for example, 1 micron), the length accuracy value for ±
0.0005 millimeter, and angle precision value ± 0.00015 degree.
Fig. 3 is referred to, Fig. 3 is the showing in correcting image capture module 13 of the utility model first embodiment board 100
It is intended to.As shown in figure 3, when correcting image capture module 13 is intended to, photomask structure 2 is first placed in chamber 12 first, the is allowed
The one contraposition contraposition token groups 22 of token groups 21, second, the 3rd contraposition token groups 23 align token groups 24 respectively corresponding the with the 4th
One image capturing device 131, the second image capturing device 132, the 3rd image capturing device 133 and the 4th image capturing device
134, then, control module 104 controls the first image capturing device 131, the second image capturing device 132, the capture of the 3rd image
Equipment 133 captures respectively corresponding image with the 4th image capturing device 134.In the present embodiment, the first contraposition token groups
Distance (i.e. the line length of the first reference line M1) between the main contraposition auxiliary para mark 212 of mark 211 and first of the first of 21 can
It is preferred that status is in a quarter of the field range of the first image capturing device 131, the second master of the second contraposition token groups 22
Align the preferably status of the distance (i.e. the line length of the second reference line M2) between the auxiliary para mark 222 of mark 221 and second to exist
In a quarter of the field range of the second image capturing device 132, the 3rd main contraposition mark of the 3rd contraposition token groups 23
231 and the 3rd the preferably status of the distance (i.e. the line length of the 3rd reference line M3) between auxiliary para mark 232 catch in the 3rd image
In a quarter of the field range for obtaining equipment 133, the 4th main contraposition mark 241 of the 4th contraposition token groups 24 is auxiliary with the 4th
Distance (i.e. the line length of the 4th reference line M4) the preferably status between contraposition mark 242 is helped in the 4th image capturing device 134
In a quarter of field range, and the utility model is not limited to this.
Refer to Fig. 4 to Fig. 7, the shadow that Fig. 4 is captured by the first image capturing device of the utility model first embodiment 131
The schematic diagram of picture, the schematic diagram of the image that Fig. 5 is captured by the second image capturing device of the utility model first embodiment 132,
The schematic diagram of the image that Fig. 6 is captured by the image capturing device 133 of the utility model first embodiment the 3rd, Fig. 7 is this practicality
The schematic diagram of the image that the image capturing device 134 of new first embodiment the 4th is captured.As shown in Figures 4 to 7, first is main
First main center of circle OM1 of contraposition mark 211 and the first auxiliary center of circle OA1 of the first auxiliary para mark 212 are relative to first
The coordinate of the image that image capturing device 131 is captured is respectively (M1x, M1y) and (A1x, A1y), the second main contraposition mark
221 the second main center of circle OM2 and the second auxiliary center of circle OA2 of the second auxiliary para mark 222 are captured relative to the second image
The coordinate of the image that equipment 132 is captured is respectively (M2x, M2y) and (A2x, A2y), and the 3rd mainly aligns the 3rd of mark 231
3rd auxiliary center of circle OA3 of main center of circle OM3 and the 3rd auxiliary para mark 232 is relative to the institute of the 3rd image capturing device 133
The coordinate of the image of acquisition is respectively (M3x, M3y) and (A3x, A3y), the 4th main center of circle of the 4th main contraposition mark 241
The shadow that 4th auxiliary center of circle OA4 of OM4 and the 4th auxiliary para mark 242 is captured relative to the 4th image capturing device 134
The coordinate of picture is respectively (M4x, M4y) and (A4x, A4y), and control module 14 adjusts respectively the capture of the first image according to above-mentioned coordinate
Equipment 131, the second image capturing device 132, the 3rd image capturing device 133, the position of the 4th image capturing device 134 and
Angle, to complete correction of the image capturing device relative to photomask structure 2.
Fig. 8 is referred to, Fig. 8 is the schematic diagram of the photomask structure 2 ' of the utility model second embodiment one.With previous embodiment
Unlike photomask structure 2, one first auxiliary para mark 212 ' of photomask structure 2 ', one second auxiliary para mark 222 ',
One the 3rd auxiliary para mark 232 ' and one the 4th auxiliary para mark 242 ' are square mark, rather than circular mark.First
Auxiliary para mark 212 ' is with auxiliary length of sides DA1 of one first sectional center OA1 ' and one first ', the second auxiliary para mark
222 ' with auxiliary length of sides DA2 of one second sectional center OA2 ' and one second ', the 3rd auxiliary para mark 232 ' is with one the
Auxiliary length of sides DA3 of three sectional center OA3 ' and the 3rd ', the 4th auxiliary para mark 242 ' is with one the 4th sectional center
Auxiliary length of sides DA4 of OA4 ' and the 4th ', define the first reference line between the first main center of circle OM1 and the first sectional center OA1 '
M1, defines the second reference line M2, the 3rd main center of circle OM3 and the 3rd between the second main center of circle OM2 and the second sectional center OA2 '
The 3rd reference line M3 is defined between sectional center OA3 ', the 4th is defined between the 4th main center of circle OM4 and the 4th sectional center OA4 ' and is joined
Examine line M4, first auxiliary length of side DA1 ', second auxiliary length of side DA2 ', the 3rd auxiliary length of side DA3 ' with the 4th auxiliary length of side DA4 '
The tolerance of length is ± 0.0005 millimeter.And have in the present embodiment and the component with identical label in previous embodiment identical
Structure and function, will not be described here.
Compared to prior art, photomask structure of the present utility model using the first auxiliary para mark, described second
Auxiliary para mark, the 3rd auxiliary para mark judge the first image capture with the 4th auxiliary para mark
Equipment, second image capturing device, the 3rd image capturing device are with the 4th image capturing device relative to institute
Position and the angle of photomask structure are stated, to correct rapidly and accurately first image capturing device, second shadow
As capture device, the 3rd image capturing device and the 4th image capturing device, and then lifted using first shadow
As capture device, second image capturing device, the 3rd image capturing device and the 4th image capturing device come
The precision of contraposition photomask structure and substrate.
Preferred embodiment of the present utility model is the foregoing is only, the utility model is not limited to, for this
For the technical staff in field, the utility model can have various modifications and variations.It is all it is of the present utility model spirit and principle
Within, any modification, equivalent substitution and improvements made etc. should be included within protection domain of the present utility model.
Claims (14)
1. it is a kind of to be suitable for the photomask structure that Organic Light Emitting Diode is deposited with processing procedure, it is characterised in that to include：
One smooth cover body；
One first contraposition token groups, correspond to one first image capturing device of an image acquisition module and include：
One first main cues, are arranged on the smooth cover body；And
One first mnemonic mark, is arranged on the smooth cover body and neighbouring first main cues；
One second contraposition token groups, comprising one second main cues, second main cues are arranged on the smooth cover body；
One the 3rd contraposition token groups, comprising one the 3rd main cues, the 3rd main cues are arranged on the smooth cover body；
And
One the 4th contraposition token groups, comprising one the 4th main cues, the 4th main cues are arranged on the smooth cover body；
Wherein, the described first main contraposition mark and second main the contraposition define a first side between mark, and described second
Define a second side between main contraposition mark and the 3rd main contraposition mark, the described 3rd main contraposition mark with it is described
One the 3rd side is defined between the 4th main contraposition mark, between the described 4th main contraposition mark and the first main contraposition mark
A four side is defined, between the first auxiliary para mark and the first main contraposition mark one first reference line is defined,
A first angle is formed between first reference line and the four side, the tolerance of the length of first reference line is less than one
Length accuracy value, the tolerance of the first angle is less than an angle precision value.
2. photomask structure as claimed in claim 1, it is characterised in that first main cues and first mnemonic mark
Respectively two circular marks, first main cues have the one first main center of circle and one first primary diameters, and described the
One mnemonic mark has the one first auxiliary center of circle and one first auxiliary diameter, and first reference line is main by described first
The center of circle is defined with the described first auxiliary center of circle, and the tolerance of the length of first primary diameters and described first aids in diameter
The tolerance of length is respectively less than the length accuracy value.
3. photomask structure as claimed in claim 1, it is characterised in that first main cues are a circular mark, described
First mnemonic mark is a square mark, and first main cues have the one first main center of circle and one first mainly directly
Footpath, first mnemonic mark has one first sectional center and the one first auxiliary length of side, and first reference line is by institute
State the first main center of circle to be defined with first sectional center, the tolerance of the length of first primary diameters and described first
The tolerance of the length of the auxiliary length of side is respectively less than the length accuracy value.
4. photomask structure as claimed in claim 1, it is characterised in that the second contraposition token groups correspondence image capture
One second image acquisition module of module and also include one second mnemonic mark, second mnemonic mark is arranged on the light
It is on cover body and fixed adjacent between second main cues, the second auxiliary para mark and the second main contraposition mark
Adopted one second reference line, forms a second angle between second reference line and the second side, second reference line
The tolerance of length is less than the length accuracy value, and the tolerance of the second angle is less than the angle precision value.
5. photomask structure as claimed in claim 4, it is characterised in that second main cues and second mnemonic mark
Respectively two circular marks, second main cues have the one second main center of circle and one second primary diameters, and described the
Two mnemonic marks have the one second auxiliary center of circle and one second auxiliary diameter, and second reference line is main by described second
The center of circle is defined with the described second auxiliary center of circle, and the tolerance of the length of second primary diameters and described second aids in diameter
The tolerance of length is respectively less than the length accuracy value.
6. photomask structure as claimed in claim 4, it is characterised in that second main cues are a circular mark, described
Second mnemonic mark is a square mark, and second main cues have the one second main center of circle and one second mainly directly
Footpath, second mnemonic mark has one second sectional center and the one second auxiliary length of side, and second reference line is by institute
State the second main center of circle to be defined with second sectional center, the tolerance of the length of second primary diameters and described second
The tolerance of the length of the auxiliary length of side is respectively less than the length accuracy value.
7. photomask structure as claimed in claim 4, it is characterised in that the 3rd contraposition token groups correspondence image capture
One the 3rd image acquisition module of module and also include one the 3rd mnemonic mark, the 3rd mnemonic mark is arranged on the light
It is on cover body and fixed adjacent between the 3rd main cues, the 3rd auxiliary para mark and the 3rd main contraposition mark
Adopted one the 3rd reference line, forms a third angle between the 3rd reference line and the second side, the 3rd reference line
The tolerance of length is less than the length accuracy value, and the tolerance of the third angle is less than the angle precision value.
8. photomask structure as claimed in claim 7, it is characterised in that the 3rd main cues and the 3rd mnemonic mark
Respectively two circular marks, the 3rd main cues have one the 3rd main center of circle and one the 3rd primary diameters, and described the
Three mnemonic marks have one the 3rd auxiliary center of circle and one the 3rd auxiliary diameter, and the 3rd reference line is main by the described 3rd
The center of circle is defined with the described 3rd auxiliary center of circle, and the tolerance of the length of the 3rd primary diameters and the described 3rd aids in diameter
The tolerance of length is respectively less than the length accuracy value.
9. photomask structure as claimed in claim 7, it is characterised in that the 3rd main cues are a circular mark, described
3rd mnemonic mark is a square mark, and the 3rd main cues have one the 3rd main center of circle and the 3rd mainly directly
Footpath, the 3rd mnemonic mark has one the 3rd sectional center and one the 3rd auxiliary length of side, and the 3rd reference line is by institute
State the 3rd main center of circle to be defined with the 3rd sectional center, the tolerance and the described 3rd of the length of the 3rd primary diameters
The tolerance of the length of the auxiliary length of side is respectively less than the length accuracy value.
10. photomask structure as claimed in claim 7, it is characterised in that the 4th contraposition token groups correspondence image is picked
One the 4th image acquisition module of delivery block and also include one the 4th mnemonic mark, the 4th mnemonic mark is arranged on described
On light cover body and adjacent between the 4th main cues, the 4th auxiliary para mark and the 4th main contraposition mark
One the 4th reference line is defined, a fourth angle, the 4th reference line are formed between the 4th reference line and the four side
The tolerance of length be less than the length accuracy value, the tolerance of the fourth angle is less than the angle precision value.
11. photomask structures as claimed in claim 10, it is characterised in that the 4th main cues and the described 4th auxiliary note
Number two circular marks are respectively, the 4th main cues have one the 4th main center of circle and one the 4th primary diameters, described
4th mnemonic mark has one the 4th auxiliary center of circle and one the 4th auxiliary diameter, and the 4th reference line is by the 4th master
The center of circle is wanted to be defined with the described 4th auxiliary center of circle, the tolerance of the length of the 4th primary diameters and the described 4th aids in diameter
The tolerance of length be respectively less than the length accuracy value.
12. photomask structures as claimed in claim 10, it is characterised in that the 4th main cues be a circular mark, institute
It is a square mark to state the 4th mnemonic mark, and the 4th main cues are main with one the 4th main center of circle and one the 4th
Diameter, the 4th mnemonic mark have one the 4th sectional center and one the 4th auxiliary the length of side, the 4th reference line be by
The 4th main center of circle is defined with the 4th sectional center, the tolerance of the length of the 4th primary diameters and described
The tolerance of the length of the four auxiliary length of sides is respectively less than the length accuracy value.
13. photomask structures as claimed in claim 10, it is characterised in that the described first main contraposition mark, second master
Align mark, the described 3rd main contraposition mark, the described 4th main contraposition mark, the first auxiliary para mark, described the
Two auxiliary para marks, the 3rd auxiliary para mark are formed respectively with the 4th auxiliary para mark in the way of etching
On the smooth cover body.
14. photomask structures as claimed in claim 10, it is characterised in that the first angle, the second angle, described
Three angles are in 90 degree with the fourth angle.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105125224 | 2016-08-09 | ||
| TW105125224A TWI604073B (en) | 2016-08-09 | 2016-08-09 | Mask structure capable of calibrating an image capturing module and adapted for a evaporation process of an organic light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206127396U true CN206127396U (en) | 2017-04-26 |
Family
ID=58564812
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620916617.2U Expired - Fee Related CN206127396U (en) | 2016-08-09 | 2016-08-22 | Light shield structure suitable for organic light-emitting diode evaporation process |
| CN201610704928.7A Withdrawn CN107699850A (en) | 2016-08-09 | 2016-08-22 | Light shield structure suitable for organic light-emitting diode evaporation process |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610704928.7A Withdrawn CN107699850A (en) | 2016-08-09 | 2016-08-22 | Light shield structure suitable for organic light-emitting diode evaporation process |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN206127396U (en) |
| TW (1) | TWI604073B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109188856B (en) * | 2018-10-31 | 2021-10-08 | 京东方科技集团股份有限公司 | Mask plate frame, mask plate, manufacturing method of mask plate and screen stretching machine |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4652134A (en) * | 1984-08-28 | 1987-03-24 | Lsi Logic Corporation | Mask alignment system |
| JP4794408B2 (en) * | 2006-10-11 | 2011-10-19 | Ｏｋｉセミコンダクタ株式会社 | Photomask and semiconductor device manufacturing method |
| JP4656440B2 (en) * | 2007-02-13 | 2011-03-23 | 東京エレクトロン株式会社 | Substrate position detecting device and image pickup means position adjusting method |
| US8520060B2 (en) * | 2007-02-25 | 2013-08-27 | Humaneyes Technologies Ltd. | Method and a system for calibrating and/or visualizing a multi image display and for reducing ghosting artifacts |
| CN101241319B (en) * | 2008-03-06 | 2010-08-25 | 上海微电子装备有限公司 | Machine vision aligning system possessing mask target hierarchy and its alignment method |
| TWI436098B (en) * | 2010-12-16 | 2014-05-01 | Ind Tech Res Inst | System and method for constructing high resolution images |
| KR101826068B1 (en) * | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | Apparatus for thin layer deposition |
| TWI460394B (en) * | 2012-07-20 | 2014-11-11 | Test Research Inc | Three-dimensional image measuring apparatus |
| TWM533762U (en) * | 2016-08-09 | 2016-12-11 | Mirle Automation Corp | Mask structure capable of calibrating an image capturing module and adapted for a evaporation process of an organic light-emitting diode |
-
2016
- 2016-08-09 TW TW105125224A patent/TWI604073B/en not_active IP Right Cessation
- 2016-08-22 CN CN201620916617.2U patent/CN206127396U/en not_active Expired - Fee Related
- 2016-08-22 CN CN201610704928.7A patent/CN107699850A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN107699850A (en) | 2018-02-16 |
| TW201805452A (en) | 2018-02-16 |
| TWI604073B (en) | 2017-11-01 |
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