CN206117523U - Power module - Google Patents
Power module Download PDFInfo
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- CN206117523U CN206117523U CN201621027102.3U CN201621027102U CN206117523U CN 206117523 U CN206117523 U CN 206117523U CN 201621027102 U CN201621027102 U CN 201621027102U CN 206117523 U CN206117523 U CN 206117523U
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Abstract
The utility model discloses a power module, including the radiator of IGBT module group, IGBT drive plate, IGBT module group, connect the direct current of IGBT module was femalely arranged, the IGBT module is parallelly connected interchange copper bar, electric capacity group, just, negative busbar copper bar and middle insulating layer, IGBT module, IGBT drive plate, direct current be female arranges and exchanges copper bar symmetrical arrangement in the both sides of radiator, the direct current is female arrange with just, negative busbar copper bar and middle insulating layer link into an integrated entity through the output terminal that electric capacity was organized jointly. The utility model relates to a power module can reduce the stray inductance of IGBT module, reduces the shutoff overvoltage of IGBT module, the IGBT module can arrange that the structure is compacter, has improved power density on the radiator both sides, it is the same to exchange the copper bar route, and IGBT flow equalizes more excellently, and the reliability is higher.
Description
Technical field
This utility model belongs to electronic device field, and in particular to a kind of power model module.
Background technology
Power semiconductor quickly grows in recent years, and the density of power semiconductor is improved constantly, and new device renewal speed is accelerated,
High-power electric and electronic inverter, especially wind electric converter, photovoltaic DC-to-AC converter, universal frequency converter, energy accumulation current converter etc. are very
Be limited to the development of IGBT module, with the development of New IGBT module, the composite loss of following IGBT module is lower, efficiency more
High, volume is less, high-power electric and electronic inverter also to switching frequency it is higher, volume is less, the direction that cost is lower is developed.
But, compared to IGBT module, the slower development such as passive device (electric capacity, resistance) and cooling system, constrain the work(of inverter
Rate density is lifted, the power density improved by inverter, it is necessary to IGBT power models reasonable in design, IGBT work(common at present
There are multiple structural forms in rate module, but there is following defect：1st, volume is big, difficult in maintenance：Generally power model configuration one
The bus capacitor of fixed number amount, the volume increase of power model, weight increase, difficult in maintenance, change power model process complexity, dimension
Shield is difficult；2nd, power density is low：In order to improve power density, power model is generally radiated using the cold mode of liquid, but configuration one
After the bus capacitor of fixed number amount, need special air channel to be arranged for electric capacity, as module number increases, need to configure the wind of equivalent
Road, and wind-cooling heat dissipating effect is relatively low, constrains the lifting of power density.And the mode that tradition solves electric capacity radiating is electricity
Appearance is placed on the liquid cooling heat radiator of power model, to improve heat-sinking capability, however it is necessary that increasing the volume of liquid cooling heat radiator, work(
The power density of rate module also suffers from restriction；3rd, reliability is low：Traditional IGBT power models and DC bus capacitor separate, work(
Although rate module small volume, IGBT module stray inductance increases, and IGBT device reliability is reduced.
Utility model content
The purpose of this utility model is to design a kind of IGBT power models by the connection of setting mirror image on a heat sink
Group, the DC master row of bending, one piece of driving plate and AC copper-line solve stray inductance is reduced while power density is increased
Problem.
To solve the above problems, the utility model proposes a kind of power model module.
The technical scheme adopted by this utility model is：
Power model module, including：
IGBT power model groups, the IGBT power models group are made up of side by side IGBT power module architectures, IGBT power
Modular structure includes IGBT module group, IGBT driving plates, DC master row, AC copper-line and radiator；IGBT module group, it is described
IGBT module group is made up of IGBT module parallel；IGBT driving plates, the IGBT driving plates connect IGBT module group, positioned at IGBT
On the outside of module group；DC master row, described DC master row one end connect IGBT module group, and the other end is connected with electric capacity module, is located at
On the outside of IGBT module group；AC copper-line, described AC copper-line one end connect IGBT module group, on the outside of IGBT driving plates；Dissipate
Hot device, the radiator connect IGBT module group；
Electric capacity module, the electric capacity module include capacitance group, positive bus-bar copper bar, intermediate insulating layer and negative busbar copper bar, just
Bus bar copper row, intermediate insulating layer, negative busbar copper bar and DC master row are by the use of the lead-out terminal of capacitance group as junction point, positive pole
Line copper bar, intermediate insulating layer and negative busbar copper bar are located between capacitance group and DC master row.
Preferably, each one IGBT module group of connection in the radiator both sides, IGBT module group and connected
, with radiator as plane of symmetry specular, a module radiator connects two IGBT for IGBT driving plates, DC master row and AC copper-line
Module group, increases power density, and reduces cost, device are symmetrical, then reduce the IGBT module brought with the increase of device
Uneven stream.
Preferably, the DC master row adopts positive negative busbar stacked system, and 90 degree of bending, straight with each IGBT module
Stream terminal connection, is connected with DC side bus bar copper row by the way of positive negative busbar lamination, and is connected in the way of 90 degree of bending
DC side bus bar copper row is connected to, the stray inductance of IGBT module DC master row commutation circuit can be reduced, reduce IGBT module
Shut-off overvoltage, improves the safety and reliability of IGBT device.
Preferably, the AC copper-line is connected with the ac terminal of each IGBT module, in the other end and IGBT module group
Each IGBT module ac terminal distance it is identical, AC copper-line one end is connected to the ac terminal of multiple IGBT modules, separately
One end connection output copper bar, is for the equal mobility for improving multiple IGBT modules.
Preferably, the IGBT driving plates are merged into one piece of driving plate by IGBT module driving plate in parallel, and and each
IGBT module connects, and link position is located at the centre position of IGBT module group, drives cable and offer connection reliable to reduce
Property, multiple IGBT module driving plates in parallel can be merged into one piece of driving plate, link position can improve drive in centre
The concordance of dynamic signal.
This utility model has advantages below and effect：
1st, IGBT power models of the present utility model and DC bus capacitor separate, power model small volume, safeguard simple, more
Change IGBT module low cost.
2nd, this utility model and is symmetrically distributed in scattered by least two IGBT power module parallels into IGBT power model groups
Hot device both sides, in same area, increase power density, reduce the manufacturing cost of power model, while symmetrical setting can
To avoid the uneven stream of IGBT module.
3rd, IGBT module DC master row of the present utility model by the way of positive negative busbar lamination with DC side bus bar copper row
Connection, and DC side bus bar copper row is connected in the way of 90 degree of bending, the IGBT module DC master row change of current time can be reduced
The stray inductance on road, while IGBT Absorption Capacitances are not used, it is to avoid Absorption Capacitance goes forward side by side one due to the larger easy failure of caloric value
Step reduces cost.
4th, IGBT module AC copper-line one end of the present utility model connects the ac terminal of multiple IGBT modules, and the other end connects
Output copper bar is connect, the other end of AC copper-line needs, raising multiple IGBTs isometric with the distance of multiple IGBT module ac terminals
The equal mobility of module.
5th, positive bus-bar copper bar of the present utility model, intermediate insulating layer, negative busbar copper bar and DC master row utilize capacitance group
Lead-out terminal as junction point, reduce the number of openings of positive and negative bus bar copper row, reduce the stray inductance of commutation circuit, reduce
The shut-off overvoltage of IGBT module, improves reliability.
Description of the drawings
The accompanying drawing for constituting the part of the application is used for providing further understanding to of the present utility model, of the present utility model
Schematic description and description is used to explain this utility model, does not constitute to improper restriction of the present utility model.
Explosive views of the Fig. 1 for this utility model power modules；
First embodiment structural representations of the Fig. 2 for this utility model power modules；
Explosive view label declarations of the Fig. 3 for this utility model power module architectures；
Second embodiment structural representations of the Fig. 4 for this utility model power modules.
Label declaration：
IGBT module 1；IGBT driving plates 2；Radiator 3；DC master row 4；AC copper-line 5；
Negative busbar copper bar 6；Intermediate insulating layer 7；Positive bus-bar copper bar 8；Capacitance group 9.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to this utility model.It should be appreciated that specific embodiment described herein is only to explain this
Utility model, is not used to limit this utility model.
Embodiment 1：As shown in Figures 1 to 3, the power model module involved by this utility model, including IGBT power models
And electric capacity module, IGBT power models are made up of side by side three IGBT power module architectures, and electric capacity module includes capacitance group 9, just
Bus bar copper row 8, intermediate insulating layer 7 and negative busbar copper bar 6.
IGBT power module architectures, including radiator 3, the connection of IGBT module group, IGBT driving plates 2, IGBT module
The DC master row 4 of IGBT module and the AC copper-line 5 for parallel IGBT module.IGBT module group is by two IGBT modules 1
Compose in parallel, on liquid cooling heat radiator 3, its IGBT module 1 can be 1000A power models (such as moral conventional at present
The 5th generation FF1800R17IP5 of the FF1000R17IE4 of Infineon of state forth generation, or follow-up same package size), also
Can be manufacturing silicon carbide semiconductor (SiC) and the new device of gallium nitride semiconductor (GaN)；IGBT driving plates 2 are arranged on two IGBT moulds
On block, two IGBT module driving plates are merged into one piece of IGBT driving plate 2, and its link position is located in two IGBT modules 1
Between；The coolant inlet of radiator 3 is located at the lower section of cooling liquid outlet；IGBT module DC master row 4 includes positive busbar, negative busbar
With the DC terminal of the dielectric film for positive and negative master row insulating, positive busbar and negative busbar one end connection IGBT module 1, its other end
DC side bus bar copper row is connected to, positive negative busbar is connected with DC side bus bar copper row in the way of lamination, and with 90 degree of bending
Mode be connected to DC side bus bar copper row, DC master row 4 can be the lamination of common copper bar, or BUSBAR modes
Busbar；5 one end of AC copper-line is connected to the ac terminal of two IGBT modules, and other end connection exports copper bar, AC copper-line 5
The other end needs to keep isometric with the distance of two IGBT module ac terminals；IGBT module 1, IGBT driving plates 2, DC master row
4th, AC copper-line 5 is arranged in the both sides of radiator 3, and is distributed in specular.
Capacitance group 9 is the capacitance pool that 36 electric capacity is constituted side by side, and positive bus-bar copper bar 8 and negative busbar copper bar 6 can select general
Logical copper bar mode, or form the stack bus bar of BUSBAR modes, positive bus-bar copper bar 8, centre with the pressure of intermediate insulating layer 7
Insulating barrier 7 and negative busbar copper bar 6 share the lead-out terminal of capacitance group 9 as junction point, and electric capacity module is with capacitance group 9, positive bus-bar
Copper bar 8, intermediate insulating layer 7 and negative busbar copper bar 6 are linked in sequence, then by the lead-out terminal of capacitance group 9 by IGBT power
The DC master row 4 of module is connected on negative busbar copper bar 6, is linked into an integrated entity.
Embodiment 2：As shown in figure 4, the power model module involved by this utility model, including IGBT power models and electricity
Molar group, IGBT power models are made up of side by side three IGBT power module architectures, and electric capacity module includes capacitance group 9, positive bus-bar
Copper bar 8, intermediate insulating layer 7 and negative busbar copper bar 6.
IGBT power module architectures, including radiator 3, the connection of IGBT module group, IGBT driving plates 2, IGBT module
The DC master row 4 of IGBT module and the AC copper-line 5 for parallel IGBT module.IGBT module group is by two IGBT modules 1
Compose in parallel, on liquid cooling heat radiator 3, its IGBT module 1 can be 1000A power models (such as moral conventional at present
The 5th generation FF1800R17IP5 of the FF1000R17IE4 of Infineon of state forth generation, or follow-up same package size), also
Can be manufacturing silicon carbide semiconductor (SiC) and the new device of gallium nitride semiconductor (GaN)；IGBT driving plates 2 are arranged on two IGBT moulds
On block, two IGBT module driving plates are merged into one piece of IGBT driving plate 2, and its link position is located in two IGBT modules 1
Between；The coolant inlet of radiator 3 is located at the lower section of cooling liquid outlet；IGBT module DC master row 4 includes positive busbar, negative busbar
With the DC terminal of the dielectric film for positive and negative master row insulating, positive busbar and negative busbar one end connection IGBT module 1, its other end
DC side bus bar copper row is connected to, positive negative busbar is connected with DC side bus bar copper row in the way of lamination, and with 90 degree of bending
Mode be connected to DC side bus bar copper row, DC master row 4 can be the lamination of common copper bar, or BUSBAR modes
Busbar；5 one end of AC copper-line is connected to the ac terminal of two IGBT modules, other end connection output copper bar, AC copper-line 5
The other end need keep it is isometric with the distance of two IGBT module ac terminals；IGBT module 1, IGBT driving plates 2, direct current are female
Row 4, AC copper-line 5 is arranged in the both sides of radiator 3, and is distributed in specular.
Capacitance group 9 is the capacitance pool that 36 electric capacity is constituted side by side, and positive bus-bar copper bar 8 and negative busbar copper bar 6 can select general
Logical copper bar mode, or form the stack bus bar of BUSBAR modes, positive bus-bar copper bar 8, centre with the pressure of intermediate insulating layer 7
Insulating barrier 7 and negative busbar copper bar 6 share the lead-out terminal of capacitance group 9 as junction point, and electric capacity module is with capacitance group 9, positive bus-bar
Copper bar 8, intermediate insulating layer 7 and negative busbar copper bar 6 are linked in sequence, then by the lead-out terminal of capacitance group 9 by IGBT power
The DC master row 4 of module is connected on negative busbar copper bar 6, is linked into an integrated entity.
So latter two power model module passes through opening and lower end work(on the positive bus-bar copper bar 8 of upper end power model module
Opening on the negative busbar copper bar 6 of rate module module is fixedly connected integral.
Preferred embodiment of the present utility model is the foregoing is only, it is not to limit this utility model, all in this practicality
Within new spirit and principle, any modification, equivalent substitution and improvements made etc. should be included in guarantor of the present utility model
Within the scope of shield.
Claims (5)
1. power model module, it is characterised in that include：
IGBT power model groups, the IGBT power models group are made up of side by side IGBT power module architectures, IGBT power models
Structure includes IGBT module group, IGBT driving plates, DC master row, AC copper-line and radiator；IGBT module group, the IGBT moulds
Block group is made up of IGBT module parallel；IGBT driving plates, the IGBT driving plates connect IGBT module group, positioned at IGBT module group
Outside；DC master row, described DC master row one end connect IGBT module group, and the other end is connected with electric capacity module, positioned at IGBT moulds
On the outside of block group；AC copper-line, described AC copper-line one end connect IGBT module group, on the outside of IGBT driving plates；Radiator, institute
State radiator connection IGBT module group；
Electric capacity module, the electric capacity module include capacitance group, positive bus-bar copper bar, intermediate insulating layer and negative busbar copper bar, positive bus-bar
Copper bar, intermediate insulating layer, negative busbar copper bar and DC master row are by the use of the lead-out terminal of capacitance group as junction point, positive bus-bar copper
Row, intermediate insulating layer and negative busbar copper bar are located between capacitance group and DC master row.
2. power model module according to claim 1, it is characterised in that each one IGBT of connection in the radiator both sides
Module group, IGBT module group and connected IGBT driving plates, DC master row and AC copper-line are with radiator as the plane of symmetry
Specular.
3. power model module according to claim 1, it is characterised in that the DC master row adopts positive negative busbar lamination
Mode, and 90 degree of bending, are connected with the DC terminal of each IGBT module.
4. power model module according to claim 1, it is characterised in that the AC copper-line and each IGBT module
Ac terminal connects, and the other end is identical with the distance of each the IGBT module ac terminal in IGBT module group.
5. power model module according to claim 1, it is characterised in that the IGBT driving plates are by IGBT moulds in parallel
Block driving plate is merged into one piece of driving plate, and is connected with each IGBT module, and link position is located at the interposition of IGBT module group
Put.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621027102.3U CN206117523U (en) | 2016-08-31 | 2016-08-31 | Power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621027102.3U CN206117523U (en) | 2016-08-31 | 2016-08-31 | Power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206117523U true CN206117523U (en) | 2017-04-19 |
Family
ID=58519056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621027102.3U Active CN206117523U (en) | 2016-08-31 | 2016-08-31 | Power module |
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| Country | Link |
|---|---|
| CN (1) | CN206117523U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019154592A1 (en) * | 2018-02-06 | 2019-08-15 | Siemens Aktiengesellschaft | Power electronic circuit having a plurality of power modules |
| CN112687644A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
| US11373804B2 (en) | 2018-02-06 | 2022-06-28 | Siemens Aktiengesellschaft | Capacitor structure and power module having a power electronic component |
| WO2022262215A1 (en) * | 2021-06-18 | 2022-12-22 | 中国第一汽车股份有限公司 | Inverter assembly |
-
2016
- 2016-08-31 CN CN201621027102.3U patent/CN206117523U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019154592A1 (en) * | 2018-02-06 | 2019-08-15 | Siemens Aktiengesellschaft | Power electronic circuit having a plurality of power modules |
| CN111699555A (en) * | 2018-02-06 | 2020-09-22 | 西门子股份公司 | Power electronic circuit with a plurality of power modules |
| US11282822B2 (en) | 2018-02-06 | 2022-03-22 | Siemens Aktiengesellschaft | Power electronic circuit having a plurality of power modules |
| US11373804B2 (en) | 2018-02-06 | 2022-06-28 | Siemens Aktiengesellschaft | Capacitor structure and power module having a power electronic component |
| CN111699555B (en) * | 2018-02-06 | 2023-09-01 | 西门子股份公司 | Power electronic circuit with multiple power modules |
| CN112687644A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
| CN112687644B (en) * | 2020-12-16 | 2024-04-19 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
| WO2022262215A1 (en) * | 2021-06-18 | 2022-12-22 | 中国第一汽车股份有限公司 | Inverter assembly |
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