CN205999509U - A kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area - Google Patents
A kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area Download PDFInfo
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- CN205999509U CN205999509U CN201620933124.XU CN201620933124U CN205999509U CN 205999509 U CN205999509 U CN 205999509U CN 201620933124 U CN201620933124 U CN 201620933124U CN 205999509 U CN205999509 U CN 205999509U
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- heat
- ingot furnace
- seed crystal
- polycrystalline ingot
- graphite
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Abstract
A kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area, including heat-insulation cage framework, described heat-insulation cage framework lower end is provided with increases heat preservation strip, increase heat preservation strip lower end and be provided with bottom graphite cake, described bottom graphite cake upper end is provided with graphite column, the orientation that graphite column upper end is provided with square protrusions structure gazes at block, described orientation is gazed at and is equipped with orientation on three faces of the boss surrounding of block and gazes at block warming plate, orientation is gazed at block upper end and is provided with graphite base plate, graphite base plate upper end is provided with crucible, it is provided with heat-insulation cage warming plate outside crucible, described crucible upper end is provided with C C cover plate, C C cover plate upper end is provided with heat-insulation cage C C plate.When this utility model solves the problems, such as that polycrystalline ingot furnace side heater caloric value is excessive, to bottom margin seed crystal radiations heat energy, excessively and heat can not shed in time and lead to seed crystal area not enough, have the characteristics that the seed crystal area of raising crystal ingot bottom high-temperature region, seeding are respond well.
Description
Technical field
This utility model is related to a kind of to improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area.
Background technology
What polycrystalline cast ingot field was widely used at present is half process of smelting that bottom spreads little particle, and this technique is silicon material many
In brilliant ingot furnace during fusing, so that silicon material is progressively melted from top to bottom, fusing reach stop during the particle layer of bottom shop fixtures melting into
Enter crystal growth phase, have silicon material in small, broken bits to serve as the adductive crystallization of seed crystal, the crystallographic grain of oriented growth is uniform in size, very well
Guarantee polysilicon chip light Denso change efficiency.But this kind of Technology extremely rely on bottom seed crystal area possess size,
Generally, reduce main molten temperature or lifting ingot furnace heat shielding increase radiating and can reduce being heated of bottom seed crystal edges,
Can ensure that the qualified seed crystal area of seed crystal, but part G6 polycrystalline ingot furnace side heater heating power is larger, lead in time
After opening heat shielding or reducing main molten temperature, bottom seed crystal edges are still melt, and seed crystal area possesses deficiency, and edge silico briquette does not have seed
Brilliant seeding, crystal grain is mixed and disorderly, and dislocation is high, and the conversion efficiency of residing silicon chip is low.
Utility model content
Its purpose of this utility model is that offer is a kind of and can improve the polycrystalline that polycrystalline ingot furnace partly melts technique seed crystal area
Ingot furnace, solve polycrystalline ingot furnace side heater caloric value excessive when excessive to bottom margin seed crystal radiations heat energy and
Heat can not shed in time and lead to the problem of seed crystal area deficiency, have seed crystal area, the seeding improving crystal ingot bottom high-temperature region
Respond well feature.
The technical scheme realized above-mentioned purpose and take, including heat-insulation cage framework, described heat-insulation cage framework lower end is provided with and adds
High heat preservation strip, increases heat preservation strip lower end and is provided with bottom graphite cake, described bottom graphite cake upper end is provided with graphite column, graphite column
The orientation that upper end is provided with square protrusions structure gazes at block, and described orientation is gazed to be equipped with three faces of the boss surrounding of block and determined
To gazing at block warming plate, orientation is gazed at block upper end and is provided with graphite base plate, and graphite base plate upper end is provided with crucible, be provided with outside crucible every
Hot cage warming plate, described crucible upper end is provided with C-C cover plate, and C-C cover plate upper end is provided with heat-insulation cage C-C plate.
Beneficial effect
Compared with prior art this utility model has advantages below.
1. improve the seed crystal area of crystal ingot bottom high-temperature region.
2. seeding is respond well.
Brief description
The utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is structural representation of the present utility model；
Fig. 2 is to increase heat preservation strip structural representation in this utility model；
Fig. 3 is to increase heat preservation strip structure three-view diagram in this utility model.
Specific embodiment
This device includes heat-insulation cage framework 1, as shown in figure 1, described heat-insulation cage framework 1 lower end is provided with and increases heat preservation strip 12,
Increase heat preservation strip 12 lower end and be provided with bottom graphite cake 10, described bottom graphite cake 10 upper end is provided with graphite column 9, graphite column 9
The orientation that upper end is provided with square protrusions structure gazes at block 11, and described orientation is gazed at and is all provided with three faces of the boss surrounding of block 11
Orientation is had to gaze at block warming plate 8, orientation is gazed at block 11 upper end and is provided with graphite base plate 7, and graphite base plate 7 upper end is provided with crucible 5, crucible
It is provided with heat-insulation cage warming plate 4, described crucible 5 upper end is provided with C-C cover plate 3, and C-C cover plate 3 upper end is provided with heat-insulation cage C-C plate outside 5
2.
Described heat preservation strip 12 of increasing is 4, and its cross section is " L " type, increases heat preservation strip 12 vertical and is located at heat-insulation cage
Inside framework 1, increasing heat preservation strip 12 vertical one end is higher than the other end.
Increase heat preservation strip 12 in this utility model and be designed as three parts, as shown in Figure 2 and Figure 3, Part I：Guarantor will be increased
The A1 face height of warm bar 12 is changed to 40-120mm height from original 40mm, and the height near A1 face (long side) is 40--120mm,
Height near A3 face (minor face) is 40--80mm, and A4 increases in face heat preservation strip and is highly changed to 40--120cm；Will be solidifying for composition orientation
A1 face orientation in A1, A2, A3, A4 face of castable warming plate 8 is gazed at block warming plate 8 and is cancelled, and overlooks and is changed into " recessed " type.Second
Point：The height that heat preservation strip 12 is increased in increase A1 face can effectively stop ask excessive to edge heat radiation of A1 side heater
Topic, the inclined design that A2, A4 increase in face heat preservation strip can guide heat to concentrate to A3 face, the heat in balance A1, A3 face；Due to molten
Change stage heat-insulation cage is in the state of spreading its tail, and orientation is gazed at block warming plate 8 and is changed into " recessed " type from " returning " type so that bottom heat radiation
Position offsets to high-temperature region (A1 face), and less heat is accumulated in A1 face high-temperature region, and the heat radiation cooperation of balance height warm area increases
The heat increasing warm area scatters and disappears, thus effectively improving bottom seed crystal area.Part III：Heat-insulation cage is increased heat preservation strip 12 tear open
Remove, it is all highly to grow to A1 face that A2, A4 face is replaced by, and A3 face is installed and increased heat preservation strip 12, protected 3 with molybdenum filament
Warm bar is fixed on heat-insulation cage, and does not protrude to the inside of heat-insulation cage, will tear open to the A1 face bottom holding plates gazing at block warming plate 8
Remove.
Claims (2)
1. a kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area, including heat-insulation cage framework（1）, it is special
Levy and be, described heat-insulation cage framework（1）Lower end is provided with increases heat preservation strip（12）, increase heat preservation strip（12）Lower end is provided with bottom graphite
Plate（10）, described bottom graphite cake（10）Upper end is provided with graphite column（9）, graphite column（9）Upper end is provided with square protrusions knot
The orientation of structure gazes at block（11）, described orientation gazes at block（11）Three faces of boss surrounding on be equipped with orientation gaze at block insulation
Plate（8）, orient and gaze at block（11）Upper end is provided with graphite base plate（7）, graphite base plate（7）Upper end is provided with crucible（5）, crucible（5）Outward
Side is provided with heat-insulation cage warming plate（4）, described crucible（5）Upper end is provided with C-C cover plate（3）, C-C cover plate（3）Upper end is provided with heat-insulation cage
C-C plate（2）.
2. according to claim 1 a kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area, its
It is characterised by, described increase heat preservation strip（12）For 4, and its cross section is " L " type, increases heat preservation strip（12）Vertical be located at every
Hot cage frame frame（1）Inner side, increases heat preservation strip（12）Vertical one end is higher than the other end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620933124.XU CN205999509U (en) | 2016-08-25 | 2016-08-25 | A kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620933124.XU CN205999509U (en) | 2016-08-25 | 2016-08-25 | A kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205999509U true CN205999509U (en) | 2017-03-08 |
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ID=58198147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620933124.XU Expired - Fee Related CN205999509U (en) | 2016-08-25 | 2016-08-25 | A kind of can improve the polycrystalline ingot furnace that polycrystalline ingot furnace partly melts technique seed crystal area |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205999509U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107620120A (en) * | 2017-09-11 | 2018-01-23 | 江西旭阳雷迪高科技股份有限公司 | A kind of polycrystalline furnace thermal field for casting quasi- G7 silicon ingots |
-
2016
- 2016-08-25 CN CN201620933124.XU patent/CN205999509U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107620120A (en) * | 2017-09-11 | 2018-01-23 | 江西旭阳雷迪高科技股份有限公司 | A kind of polycrystalline furnace thermal field for casting quasi- G7 silicon ingots |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170308 Termination date: 20200825 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |