CN205920242U - Divide optical chip - Google Patents

Divide optical chip Download PDF

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Publication number
CN205920242U
CN205920242U CN201620641213.7U CN201620641213U CN205920242U CN 205920242 U CN205920242 U CN 205920242U CN 201620641213 U CN201620641213 U CN 201620641213U CN 205920242 U CN205920242 U CN 205920242U
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China
Prior art keywords
light splitting
reflectance coating
splitting chip
passages
passage
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CN201620641213.7U
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Chinese (zh)
Inventor
周东平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Houpu Sensing Technology Co.,Ltd.
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Shanghai Jingding Optoelectronic Technology Co Ltd
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Abstract

The utility model discloses a divide optical chip to sapphire or the quartzy substrate that is, one side of substrate is provided with cuts the secondary peak membrane system, the substrate opposite side is provided with first reflectance coating, be provided with a plurality of passageways on the first reflectance coating, separated by black chromium between the adjacency channel. This divide optical chip's working wavelength range is at 900~2500nm within range, and the size can also be adjusted by according to actual need moreover, and is very convenient integrated and domestic, is superior to domestic and international micro spectrometer's of the same type spectral resolution's performance at present greatly, realize real miniaturation, can improve reliability, stability and the optics efficiency of instrument.

Description

A kind of light splitting chip
Technical field
The utility model discloses a kind of light splitting chip, particularly to a kind of can as requested design work wave band point Optical chip.
Background technology
Near-infrared spectrum technique has very important field in fields such as chemical industry, food safety, health, mainly passes through Spectrogrph composition is identified and analyzed, the requirement more and more higher of the portability to spectrogrph and operating rate.Exist at present Make spectrogrph when, mainly spectrum function is realized by grating, but by grating beam splitting when, spectrogrph volume larger and Sweep time longer it is difficult to realize real miniaturization.Traditional integrated optical filter needs the independent plated film to each passage, and often The secondary specific mask of needs that is coated with, to complete, if 64 passages, then at least needs 64 photoetching, process is very loaded down with trivial details, if right If its dimensional requirement height, then its cumulative errors may be very big, and its yield rate can reduce;In addition, traditional integrated filtering The size of piece is big.
Utility model content
In order to overcome deficiency of the prior art, this utility model provide can with design work wave band light splitting core Piece.
For achieving the goal, this utility model to be realized by the following technical solutions:
A kind of light splitting chip, with sapphire or quartz as substrate, the side of described substrate is provided with cuts secondary peak membrane system, institute State substrate opposite side and be provided with the first reflectance coating, described first reflectance coating is provided with plurality of channels, quilt between adjacency channel Black chromium separates, and the width of each passage is 0.01-2mm, carries a width of 3.1-5.5nm, the width of described black chromium is 0.001-1mm..
Further, described passage is selected from the first reflectance coating, intermediate layer and the second reflectance coating one of collectively constitute.
Further, described first reflectance coating and the second reflectance coating are by silicon and silicon dioxide or niobium pentaoxide and titanium dioxide Silicon replaces composition.
Further, described intermediate layer is made up of silicon dioxide.
Further, the operation wavelength of described light splitting chip is that 900-2500nm is further, and described plurality of channels is 64 passages, 128 passages, 192 passages, 256 passages or 320 passages.
Further, the centre wavelength from 0 passage to last passage is gradually increased, and the precision of centre wavelength is permissible Reach ± 1nm.
The beneficial effects of the utility model are as follows:
1. light splitting chip passes through to light selectivity, and different positions passes through different spectrum, and the light receiving diverse location is real Existing light splitting function;
2. in the range of 900~2500nm, specific service band can adjust and select the service band of well-behaved optical chip Select, the working range of light splitting chip substantially covers whole near infrared spectrum, and light splitting passage has reached 320;Light splitting chip is each The width of passage can be designed as 0.188mm, and the isolation sector width between passage is 10 μm of wide, high precisions, and size is acceptable It is adjusted according to actual needs, very convenient integrated and domestic;
3. realize the spectral resolution of relative bandwidth 0.33%, be significantly better than at present domestic and international same type micro spectrometer The performance of spectral resolution;
4. the size of light splitting chip is far smaller than traditional spectrum device, realizes real miniaturization;
5. the light channel structure of micro spectrometer can be simplified, reduce the volume of spectrogrph, during work, different according to detector The signal that position receives can get its spectrum, is highly suitable for the making of micro spectrometer;
6. reliability, stability and the optical efficiency of instrument can be improved.
Brief description
Fig. 1 is the side cross-sectional view of the light splitting chip in this utility model one specific embodiment;
Fig. 2 is the top view of the light splitting chip in this utility model one specific embodiment;
Fig. 3 is the top view of the light splitting chip in this utility model one specific embodiment.
Reference
101- cuts secondary peak membrane system;102- substrate;103- first reflectance coating;104- second reflectance coating;105- intermediate layer.
Specific embodiment
Embodiment of the present utility model is described below in detail, described embodiment is exemplary, is only used for explaining this practicality New, and it is not intended that to restriction of the present utility model.
Refering to Fig. 1-3, a kind of light splitting chip, with sapphire or quartz as substrate, the side of described substrate is provided with to be cut Secondary peak membrane system, described substrate opposite side is provided with the first reflectance coating 103, described first reflectance coating 103 is provided with a plurality of logical Road, is hacked chromium and separates between adjacency channel, the width of each passage is 0.01-2mm, carries a width of 3.1-5.5nm, described black chromium Width is 0.001-1mm..
Described passage is selected from the first reflectance coating 103, intermediate layer 105 and the second reflectance coating 104 one of collectively constitute.
Described first reflectance coating 103 and the second reflectance coating 104 are by silicon and silicon dioxide or niobium pentaoxide and silicon dioxide Alternately form.Shown intermediate layer is made up of silicon dioxide.
This utility model light splitting chip can adjust as needed obtain described light splitting chip operation wavelength be 900- 2500nm.
Described plurality of channels is 64 passages, 128 passages, 192 passages, 256 passages or 320 passages.
Be gradually increased from the centre wavelength of 0 passage to last passage, and the precision of centre wavelength can reach ± 1nm.
The structural representation of the light splitting chip prepared as illustrated in fig. 1 and 2, in addition by the chip portfolio of multiple passages one On individual chip, obtain the chip of service band superposition, be also one of present embodiment, the chip that it is obtained is as shown in Figure 3.
It should be noted last that, above example is only in order to illustrate the technical solution of the utility model and unrestricted.To the greatest extent Pipe has been described in detail to this utility model with reference to embodiment, it will be understood by those within the art that, to this practicality New technical scheme is modified or equivalent, without departure from the spirit and scope of technical solutions of the utility model, its All should cover in the middle of right of the present utility model.

Claims (7)

1. a kind of light splitting chip is it is characterised in that with sapphire or quartz as substrate, and the side of described substrate is provided with to be cut time Peak membrane system, described substrate opposite side is provided with the first reflectance coating, and described first reflectance coating is provided with plurality of channels, adjacent logical It is hacked chromium between road to separate, the width of each passage is 0.01-2mm, carries a width of 3.1-5.5nm, the width of described black chromium is 0.001-1mm.
2. light splitting chip according to claim 1 is it is characterised in that described passage is selected from the first reflectance coating, intermediate layer and the Two reflectance coatings one of collectively constitute.
3. light splitting chip according to claim 2 it is characterised in that described first reflectance coating and the second reflectance coating by silicon with Silicon dioxide or niobium pentaoxide and silicon dioxide replace composition.
4. light splitting chip according to claim 2 is it is characterised in that described intermediate layer is made up of silicon dioxide.
5. light splitting chip according to claim 1 is it is characterised in that the operation wavelength of described light splitting chip is 900- 2500nm.
6. light splitting chip according to claim 1 it is characterised in that described plurality of channels be 64 passages, 128 passages, 192 passages, 256 passages or 320 passages.
7. light splitting chip according to claim 6 it is characterised in that from the centre wavelength of 0 passage to last passage by Cumulative big, and the precision of centre wavelength can reach ± 1nm.
CN201620641213.7U 2016-06-24 2016-06-24 Divide optical chip Active CN205920242U (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105954833A (en) * 2016-06-24 2016-09-21 上海晶鼎光电科技有限公司 Light splitting chip and preparation method thereof
CN108193171A (en) * 2018-01-30 2018-06-22 苏州晶鼎鑫光电科技有限公司 The manufacturing method of the optically isolated structure of multichannel integrated optical filter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105954833A (en) * 2016-06-24 2016-09-21 上海晶鼎光电科技有限公司 Light splitting chip and preparation method thereof
CN108193171A (en) * 2018-01-30 2018-06-22 苏州晶鼎鑫光电科技有限公司 The manufacturing method of the optically isolated structure of multichannel integrated optical filter
CN108193171B (en) * 2018-01-30 2019-11-19 苏州晶鼎鑫光电科技有限公司 The manufacturing method of multichannel integrated optical filter optical isolation structure

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Effective date of registration: 20200916

Address after: 215000 Jiangsu Province, Suzhou City Industrial Park, Lou Yang Road 6 new technology industrial workshop, three 2-1-B, 2-2-B

Patentee after: SUZHOU JINGXING PHOTOELECTRIC TECHNOLOGY Co.,Ltd.

Address before: 200082, Shanghai, Yangpu District Military Road No. 10, building 2, 1300 floor East

Patentee before: SHANGHAI JINGDING PHOTOELECTRIC TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right
CP01 Change in the name or title of a patent holder

Address after: 2-1-b, 2-2-b, phase III, Zhongxin Technology Industrial Park, no.6, Louyang Road, Suzhou Industrial Park, Jiangsu Province

Patentee after: Suzhou Houpu Sensing Technology Co.,Ltd.

Address before: 2-1-b, 2-2-b, phase III, Zhongxin Technology Industrial Park, no.6, Louyang Road, Suzhou Industrial Park, Jiangsu Province

Patentee before: SUZHOU JINGXING PHOTOELECTRIC TECHNOLOGY CO.,LTD.

CP01 Change in the name or title of a patent holder