CN105954833A - Light splitting chip and preparation method thereof - Google Patents
Light splitting chip and preparation method thereof Download PDFInfo
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- CN105954833A CN105954833A CN201610474081.8A CN201610474081A CN105954833A CN 105954833 A CN105954833 A CN 105954833A CN 201610474081 A CN201610474081 A CN 201610474081A CN 105954833 A CN105954833 A CN 105954833A
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- light splitting
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- 238000002360 preparation method Methods 0.000 title description 10
- 238000000576 coating method Methods 0.000 claims abstract description 63
- 239000011248 coating agent Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 21
- 239000011651 chromium Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000010453 quartz Substances 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims description 48
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 description 15
- 229910052906 cristobalite Inorganic materials 0.000 description 15
- 229910052682 stishovite Inorganic materials 0.000 description 15
- 229910052905 tridymite Inorganic materials 0.000 description 15
- 229910002625 H-Nb2O5 Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
The invention discloses a light splitting chip. Sapphire or quartz is taken as a substrate, one side of the substrate is provided with a secondary peak cutting-off film system, the other side of the substrate is provided with a first reflective film, the first reflective film is provided with a plurality of channels, and adjacent channels are separated by black chromium. Simultaneously disclosed is a manufacturing method of the chip. The method comprises the following steps: 1, photoeching the channels and aligning marks on the substrate; 2, coating the first reflective film on the substrate; 3, coating an interface layer; 4, coating a second reflective film; and 5, coating the secondary peak cutting-off film system on the back surface of the substrate. According to the invention, the work wave band of the light splitting chip ranges from 900nm to 2500nm, the dimension can also be adjusted according to actual needs, integration and household application are quite convenient, and the performance of the light splitting chip is far better than the performance of spectrum resolution of conventional similar-type miniaturized spectrometers at home and abroad; genuine miniaturization is realized; and the reliability, the stability and the optical efficiency of an instrument can be improved.
Description
Technical field
The invention discloses a kind of light splitting chip, work can be designed as requested particularly to one
Light splitting chip making wave band and preparation method thereof.
Background technology
Near-infrared spectrum technique has very important in fields such as chemical industry, food safety, health
Field, is mainly identified composition by spectrogrph and analyzes, portable to spectrogrph
The requirement of property and operating rate is more and more higher.At present when making spectrogrph, mainly pass through grating
Realize spectrum function, but during by grating beam splitting, when spectrogrph volume is relatively big and scans
Between longer, it is difficult to realize real miniaturization.Traditional integrated optical filter needs each passage
Individually plated film, and be coated with the specific mask of needs every time and complete, if 64 passages, then
At least needing 64 photoetching, process is the most loaded down with trivial details, if high to its dimensional requirement, then its
Cumulative errors may be very big, and its yield rate can reduce；It addition, traditional integrated optical filter
Size big.
Summary of the invention
In order to overcome deficiency of the prior art, the invention provides can be with design work wave band
Light splitting chip and preparation method thereof.
For achieving the goal, the present invention realizes by the following technical solutions:
A kind of light splitting chip, with sapphire or quartz as substrate, the side of described substrate is arranged
Having and cut secondary peak film system, described substrate opposite side is provided with the first reflectance coating, described first reflectance coating
On be provided with plurality of channels, be hacked chromium between adjacency channel and separate, the width of each passage is
0.01-2mm, carrying a width of 3.1-5.5nm, the width of described black chromium is 0.001-1mm..
Further, described passage is common with the second reflectance coating selected from the first reflectance coating, intermediate layer
One in composition.
Further, described first reflectance coating and the second reflectance coating are by silicon and silicon dioxide or five oxygen
Change two niobiums and silicon dioxide alternately composition.
Further, described intermediate layer is made up of silicon dioxide.
Further, the operation wavelength of described light splitting chip is that 900-2500nm is further,
Described plurality of channels is 64 passages, 128 passages, 192 passages, 256 passages or 320
Passage.
Further, it is gradually increased from the centre wavelength of 0 passage to last passage, and in
The precision of cardiac wave length can reach ± 1nm.
The manufacture method of a kind of above-mentioned light splitting chip, comprises the steps:
(1) photoetching passage and alignment mark on substrate, wherein photoetching comprises the steps of
A) pretreatment: whirl coating and front baking, spin coating photoresist on clean substrate, 80 DEG C-100 DEG C
Baking more than 10min；
B) exposure: the substrate that pretreatment is good is placed under mask plate and carries out uv-exposure；
C) development and after bake: using developer solution to develop the substrate after exposure, photoresist hides
Gear passage, exposes marked region and logical optical channel.60 DEG C of-100 DEG C of drying remain in an oven
The moisture of substrate surface；
D) it is coated with black chromium by vacuum coating mode；
E) concentration is NaOH solution or the acetone removal photoresist of 5%, stays passage to divide
Every line and alignment mark.
(2) on substrate prepared by step (1), it is coated with the first reflectance coating；
(3) it is coated with intermediate layer, on the first reflectance coating, repeats photoetching as required and go photoetching
The step of glue, till preparing the passage wanted；
(4) on described intermediate layer, the second reflectance coating it is coated with；
(5) back side at described substrate is coated with and cuts secondary peak film system.
Further, the method being coated with film described in is Vacuum Coating method.
Beneficial effects of the present invention is as follows:
1. light selectivity is passed through by light splitting chip, and different positions, through different spectrum, receives
The light of diverse location realizes light splitting function；
2. the service band of one's duty optical chip is in the range of 900～2500nm, concrete work
Wave band can adjust and select, and the working range of light splitting chip substantially covers whole near infrared light
Spectrum, light splitting passage has reached 320；The wide of each passage of light splitting chip can be designed as 0.188
Mm, the isolation area width between passage is 10 μm width, and precision is high, and size is all right
It is adjusted according to actual needs, very convenient integrated and domestic,
3. realize the spectral resolution of relative bandwidth 0.33%, be significantly better than the most similar
The performance of the spectral resolution of type micro spectrometer；
4. the size of light splitting chip is far smaller than traditional spectrum device, it is achieved real is micro-
Type；
5. can simplify the light channel structure of micro spectrometer, reduce the volume of spectrogrph, during work,
I.e. can get its spectrum according to the signal that detector diverse location receives, be highly suitable for miniature
The making of spectrogrph；
6. can improve the reliability of instrument, stability and optical efficiency；
7. use combination coating method to reduce coating times, reduce cost, improve yield rate.
Accompanying drawing explanation
Fig. 1 is the side cross-sectional view of the light splitting chip in the present invention one specific embodiment；
Fig. 2 is the top view of the light splitting chip in the present invention one specific embodiment；
Fig. 3 is the spectrogram of the light splitting chip of preparation in the specific embodiment of the invention one；
Fig. 4 is the spectrogram of the light splitting chip of preparation in the specific embodiment of the invention two；
Fig. 5 is the spectrogram of the light splitting chip of preparation in the specific embodiment of the invention three；
Fig. 6 is the spectrogram of the light splitting chip of preparation in the specific embodiment of the invention four；
Fig. 7 is the spectrogram of the light splitting chip of preparation in the specific embodiment of the invention five；
Fig. 8 is the top view of the light splitting chip in the specific embodiment of the invention six.
Reference
101-cuts secondary peak film system；102-substrate；103-the first reflectance coating；104-the second reflectance coating；
105-intermediate layer.
Detailed description of the invention
Embodiments of the invention are described below in detail, and described embodiment is exemplary, is only used for
Explain the present invention, and be not considered as limiting the invention.
Refering to Fig. 1-2, a kind of light splitting chip, with sapphire or quartz as substrate, described base
The side of sheet is provided with cuts secondary peak film system, and described substrate opposite side is provided with the first reflectance coating 103,
Be provided with plurality of channels on described first reflectance coating 103, be hacked between adjacency channel chromium every
Opening, the width of each passage is 0.01-2mm, carries a width of 3.1-5.5nm, the width of described black chromium
Degree is 0.001-1mm..
Described passage is selected from the first reflectance coating 103, intermediate layer 105 and the second reflectance coating 104 altogether
With the one in composition.
Described first reflectance coating 103 and the second reflectance coating 104 are by silicon and silicon dioxide or five oxidations
Two niobiums and silicon dioxide alternately composition.Shown intermediate layer is made up of silicon dioxide.
The operation wavelength of described light splitting chip is 900-2500nm.
Described plurality of channels is 64 passages, 128 passages, 192 passages, 256 passages or 320
Passage.
It is gradually increased from the centre wavelength of 0 passage to last passage, and the essence of centre wavelength
Degree can reach ± 1nm.
The manufacture method of a kind of above-mentioned light splitting chip, comprises the steps:
(1) photoetching passage and alignment mark on sapphire or quartz substrate 102, wherein
Photoetching comprises the steps of
A) pretreatment: whirl coating and front baking, spin coating photoresist on clean substrate 102,
80 DEG C-100 DEG C baking more than 10min；
B) exposure: the substrate that pretreatment is good is placed under mask plate and carries out uv-exposure；
C) development and after bake: using developer solution to develop the substrate after exposure, photoresist hides
Gear passage, exposes marked region and logical optical channel.60 DEG C of-100 DEG C of drying remain in an oven
The moisture of substrate surface；
D) it is coated with black chromium by vacuum coating mode；
E) concentration is NaOH solution or the acetone removal photoresist of 5%, stays passage to divide
Every line and alignment mark.
(2) on substrate prepared by step (1), the first reflectance coating 103 it is coated with；
(3) it is coated with intermediate layer 105, on the first reflectance coating 103, repeats photoetching as required
With go the step of photoresist, till preparing the passage wanted；
(4) on described intermediate layer, the second reflectance coating 104 it is coated with；
(5) back side at described substrate 102 is coated with and cuts secondary peak film system 101.
The described method being coated with film is Vacuum Coating method.
The structural representation of the light splitting chip prepared is such as Fig. 1, shown in 2 and 8.
Embodiment one:
Operation wavelength is the light splitting chip of 900-1100nm totally 64 passages, the most numbered
0-63 passage, carrying a width of 3.1 ± 1nm, centre wavelength precision is ± 1nm.From 0 passage to 63
The centre wavelength of passage is gradually increased.The width range of each passage is 0.01-2mm, adjacent logical
Road is hacked chromium and separates, and chromium line width scope is 0.001-1mm.
Light splitting chip specific make step is:
1. photoetching passage and alignment mark on sapphire substrate；Wherein photoetching comprises following step
Rapid:
A) pretreatment: whirl coating and front baking, spin coating photoresist on clean substrate 102,
80 DEG C-100 DEG C baking more than 10min；
B) exposure: the substrate that pretreatment is good is placed under mask plate and carries out uv-exposure；
C) development and after bake: using developer solution to develop the substrate after exposure, photoresist hides
Gear passage, exposes marked region and logical optical channel.60 DEG C of-100 DEG C of drying remain in an oven
The moisture of substrate surface；
D) it is coated with black chromium by vacuum coating mode；
E) concentration is NaOH solution or the acetone removal photoresist of 5%, stays passage to divide
Every line and alignment mark.
2. the structure of the first reflectance coating is: λ=1000nm, H-Nb2O5, L-SiO2, H L H L
H L H 3L。
3. utilize combination coating method to be coated with the making step in intermediate layer as follows:
A () photoetching, exposes 1, and 3,5 ... 63 odd number passages；1,3,5 ... 63 odd number passage platings
2.58nm SiO2, remove photoresist.
B () photoetching, exposes: 2, and 3,6,7,10,11,14,15,18,19,22,23,
26,27,30,31,34,35,38,39,42,43,46,47,50,51,54,
55,58,59,62,63 passages, are being coated with 2.58*2nm SiO with upper channel2, remove light
Photoresist.
C () photoetching, exposes: 4, and 5,6,7,12,13,14,15,20,21,22,
23,28,29,30,31,36,37,38,39,44,45,46,47,52,53,
54,55,60,61,62,63 passages, are being coated with 2.58*4nm SiO with upper channel2, go
Except photoresist.
D () photoetching, exposes: 8, and 9,10,11,12,13,14,15,24,25,26,
27,28,29,30,31,40,41,42,43,44,45,46,47,56,57,
58,59,60,61,62,63 passages, are being coated with 2.5*8nm SiO with upper channel2, go
Except photoresist.
E () photoetching, exposes: 16, and 17,18,19,20,21,22,23,24,25,26,
27,28,29,30,31,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 2.58*16nm SiO with upper channel2,
Remove photoresist.
F () photoetching, exposes: 32, and 33,34,35,36,37,38,39,40,41,42,
43,44,45,46,47,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 2.58*32nm SiO with upper channel2,
Remove photoresist.
4. be coated with the second reflectance coating, the second reflectance coating film structure be: λ=1000nm,
H-Nb2O5, L-SiO2, H L H L H L H 2L.
5. it is coated with and cuts secondary peak film system.
The method being coated with film is Vacuum Coating method.
The chip designed by said method calculates, obtain its spectrogram as it is shown on figure 3,
Prove that one's duty optical chip operation wavelength is 900-1100nm.
Embodiment two:
Operation wavelength is the light splitting chip of 1100-1400nm totally 64 passages, the most numbered
0-63, carrying a width of 4.5 ± 1nm, centre wavelength precision is ± 1nm.From 0 passage to 63 passages
Centre wavelength be gradually increased.The width range of each passage is 0.01-2mm, adjacency channel quilt
Black chromium separates, and chromium line width scope is 0.001-1mm,.
Light splitting chip specific make step:
On sapphire substrate photoetching passage and alignment mark, be coated with the first reflectance coating, be coated with
Two reflectance coatings are with to be coated with the step cutting secondary peak film system identical with embodiment one；
Wherein, the structure of the first reflectance coating is: λ=1200nm, H-Nb2O5, L-SiO2, H
L H L H L H 3L。
Second reflectance coating film structure be: λ=1200nm, H-Nb2O5, L-SiO2, H
L H L H L H 2L。
The making step that utilization combination coating method is coated with intermediate layer is as follows:
A () photoetching, exposes 1, and 3,5 ... 63 odd number passages；1,3,5 ... 63 odd number passage platings
3.75nm SiO2, remove photoresist.
B () photoetching, exposes: 2, and 3,6,7,10,11,14,15,18,19,22,23,
26,27,30,31,34,35,38,39,42,43,46,47,50,51,54,
55,58,59,62,63 passages, are being coated with 3.75*2nm SiO with upper channel2, remove light
Photoresist.
C () photoetching, exposes: 4, and 5,6,7,12,13,14,15,20,21,22,
23,28,29,30,31,36,37,38,39,44,45,46,47,52,53,
54,55,60,61,62,63 passages, are being coated with 3.75*4nm SiO with upper channel2, go
Except photoresist.
D () photoetching, exposes: 8, and 9,10,11,12,13,14,15,24,25,26,
27,28,29,30,31,40,41,42,43,44,45,46,47,56,57,
58,59,60,61,62,63 passages, are being coated with 3.75*8nm SiO with upper channel2, go
Except photoresist.
E () photoetching, exposes: 16, and 17,18,19,20,21,22,23,24,25,26,
27,28,29,30,31,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 3.75*16nm SiO with upper channel2,
Remove photoresist.
F () photoetching, exposes: 32, and 33,34,35,36,37,38,39,40,41,42,
43,44,45,46,47,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 3.75*32nm SiO with upper channel2,
Remove photoresist.
The chip designed by said method calculates, obtain its spectrogram as shown in Figure 4,
Prove that one's duty optical chip operation wavelength is 1100-1400nm.
Embodiment three:
Operation wavelength is the light splitting chip of 1400-1700nm totally 64 passages, the most numbered
0-63, carrying a width of 4.5 ± 1nm, centre wavelength precision is ± 1nm.From 0 passage to 63 passages
Centre wavelength be gradually increased.The width range of each passage is 0.01-2mm, adjacency channel quilt
Black chromium separates, and chromium line width scope is 0.001-1mm.
Light splitting chip specific make step:
On sapphire substrate photoetching passage and alignment mark, be coated with the first reflectance coating, be coated with
Two reflectance coatings are with to be coated with the step cutting secondary peak film system identical with embodiment one；
Wherein, the structure of the first reflectance coating is: λ=1400nm, H-Nb2O5, L-SiO2, H
L H L H L H 3L。
Second reflectance coating film structure be: λ=1400nm, H-Nb2O5, L-SiO2, H
L H L H L H 2L。
Combination coating method is utilized to be coated with intermediate layer step as follows:
A () photoetching, exposes 1, and 3,5 ... 63 odd number passages；1,3,5 ... 63 odd number passage platings
3.75nm SiO2, remove photoresist.
B () photoetching, exposes: 2, and 3,6,7,10,11,14,15,18,19,22,23,
26,27,30,31,34,35,38,39,42,43,46,47,50,51,54,
55,58,59,62,63 passages, are being coated with 3.75*2nm SiO with upper channel2, remove light
Photoresist.
C () photoetching, exposes: 4, and 5,6,7,12,13,14,15,20,21,22,
23,28,29,30,31,36,37,38,39,44,45,46,47,52,53,
54,55,60,61,62,63 passages, are being coated with 3.75*4nm SiO with upper channel2, go
Except photoresist.
D () photoetching, exposes: 8, and 9,10,11,12,13,14,15,24,25,26,
27,28,29,30,31,40,41,42,43,44,45,46,47,56,57,
58,59,60,61,62,63 passages, are being coated with 3.75*8nm SiO with upper channel2, go
Except photoresist.
E () photoetching, exposes: 16, and 17,18,19,20,21,22,23,24,25,26,
27,28,29,30,31,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 3.75*16nm SiO with upper channel2,
Remove photoresist.
F () photoetching, exposes: 32, and 33,34,35,36,37,38,39,40,41,42,
43,44,45,46,47,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 3.75*32nm SiO with upper channel2,
Remove photoresist.
It is coated with and cuts secondary peak film system.
The chip designed by said method calculates, obtain its spectrogram as it is shown in figure 5,
Prove that one's duty optical chip operation wavelength is 1400-1700nm.
Embodiment four:
Operation wavelength is the light splitting chip of 1700-2100nm totally 64 passages, the most numbered
0-63, carrying a width of 5.5 ± 1nm, centre wavelength precision is ± 1nm.Lead to from 0 passage to 63
The centre wavelength in road is gradually increased.The width range of each passage is 0.01-2mm, adjacency channel
Being hacked chromium to separate, chromium line width scope is 0.001-1mm.
Light splitting chip specific make step:
On sapphire substrate photoetching passage and alignment mark, be coated with the first reflectance coating, be coated with
Two reflectance coatings are with to be coated with the step cutting secondary peak film system identical with embodiment one；
Wherein, the structure of the first reflectance coating is: λ=1900nm, H-Si, L-SiO2, H L H
L H L H 3L。
Second reflectance coating film structure be: λ=1900nm, H-Si, L-SiO2, H L H
L H L H 2L。
The making step that utilization combination coating method is coated with intermediate layer is as follows:
A () photoetching, exposes 1, and 3,5 ... 63 odd number passages；1,3,5 ... 63 odd number passage platings
5.2nm SiO2, remove photoresist.
B () photoetching, exposes 2, and 3,6,7,10,11,14,15,18,19,22,23,
26,27,30,31,34,35,38,39,42,43,46,47,50,51,54,
55,58,59,62,63 passages, are being coated with 5.2*2nm SiO with upper channel2, remove light
Photoresist.
C () photoetching, exposes: 4, and 5,6,7,12,13,14,15,20,21,22,
23,28,29,30,31,36,37,38,39,44,45,46,47,52,53,
54,55,60,61,62,63 passages, are being coated with 5.2*4nm SiO with upper channel2, go
Except photoresist.
D () photoetching, exposes: 8, and 9,10,11,12,13,14,15,24,25,26,
27,28,29,30,31,40,41,42,43,44,45,46,47,56,57,
58,59,60,61,62,63 passages, are being coated with 5.2*8nm SiO with upper channel2, go
Except photoresist.
E () photoetching, exposes: 16, and 17,18,19,20,21,22,23,24,25,26,
27,28,29,30,31,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 5.2*16nm SiO with upper channel2, go
Except photoresist.
F () photoetching, exposes: 32, and 33,34,35,36,37,38,39,40,41,42,
43,44,45,46,47,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 5.2*32nm SiO with upper channel2, go
Except photoresist.
The chip designed by said method calculates, obtain its spectrogram as shown in Figure 6,
Prove that one's duty optical chip operation wavelength is 1700-2100nm.
Embodiment five:
Operation wavelength is the light splitting chip of 2100-2500nm totally 64 passages, the most numbered
0-63, carrying a width of 5.5 ± 1nm, centre wavelength precision is ± 1nm.Lead to from 0 passage to 63
The centre wavelength in road is gradually increased.The width range of each passage is 0.01-2mm, adjacency channel
Being hacked chromium to separate, chromium line width scope is 0.001-1mm.
Light splitting chip specific make step:
On sapphire substrate photoetching passage and alignment mark, be coated with the first reflectance coating, be coated with
Two reflectance coatings are with to be coated with the step cutting secondary peak film system identical with embodiment one；
Wherein, the structure of the first reflectance coating is: λ=2300nm, H-Si, L-SiO2, H L H
L H L H 3L。
Second reflectance coating film structure be: λ=2300nm, H-Si, L-SiO2, H L H
L H L H 2L。
The step that utilization combination coating method is coated with intermediate layer is as follows:
A () photoetching, exposes 1, and 3,5 ... 63 odd number passages；1,3,5 ... 63 odd number passage platings
6.35nm SiO2, remove photoresist.
B () photoetching, exposes: 2, and 3,6,7,10,11,14,15,18,19,22,23,
26,27,30,31,34,35,38,39,42,43,46,47,50,51,54,
55,58,59,62,63 passages, are being coated with 6.35*2nm SiO with upper channel2, remove light
Photoresist.
C () photoetching, exposes: 4, and 5,6,7,12,13,14,15,20,21,22,
23,28,29,30,31,36,37,38,39,44,45,46,47,52,53,
54,55,60,61,62,63 passages, are being coated with 6.35*4nm SiO with upper channel2, go
Except photoresist.
D () photoetching, exposes: 8, and 9,10,11,12,13,14,15,24,25,26,
27,28,29,30,31,40,41,42,43,44,45,46,47,56,57,
58,59,60,61,62,63 passages, are being coated with 6.35*8nm SiO with upper channel2, go
Except photoresist.
E () photoetching, exposes: 16, and 17,18,19,20,21,22,23,24,25,26,
27,28,29,30,31,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 6.35*16nm SiO with upper channel2,
Remove photoresist.
F () photoetching, exposes: 32, and 33,34,35,36,37,38,39,40,41,42,
43,44,45,46,47,48,49,50,51,52,53,54,55,56,57,
58,59,60,61,62,63 passages, are being coated with 6.35*32nm SiO with upper channel2,
Remove photoresist.
The chip designed by said method calculates, obtain its spectrogram as it is shown in fig. 7,
Prove that one's duty optical chip operation wavelength is 2100-2500nm.
Embodiment six
Both the above or multiple light splitting chip can be selected to be combined, thus become new light splitting
Chip, passes through the light of specific wavelength at specific regioselectivity.Fig. 8 is that service band is
The light splitting chip of 900-2500nm.Wherein, the light splitting chip of different-waveband be arranged with multiple
Form, the service band of chip diverse location can be adjusted combination, this enforcement as required
The light splitting chip of preparation in above-described embodiment 1-5 is designed on a substrate by example.
It should be noted last that, above example only in order to technical scheme to be described and
Unrestricted.Although the present invention being described in detail with reference to embodiment, the common skill of this area
Art personnel should be appreciated that and modify technical scheme or equivalent, the most not
Departing from the spirit and scope of technical solution of the present invention, it all should contain the claim in the present invention
In the middle of scope.
Claims (9)
1. a light splitting chip, it is characterised in that with sapphire or quartz as substrate, described
The side of substrate is provided with cuts secondary peak film system, and described substrate opposite side is provided with the first reflectance coating,
It is provided with plurality of channels on described first reflectance coating, is hacked chromium between adjacency channel and separates, often
The width of individual passage is 0.01-2mm, carries a width of 3.1-5.5nm, the width of described black chromium to be
0.001-1mm.。
Light splitting chip the most according to claim 1, it is characterised in that described passage is selected from the
One reflectance coating, intermediate layer and the second reflectance coating collectively constitute in one.
Light splitting chip the most according to claim 2, it is characterised in that described first reflectance coating
Alternately it is made up of silicon and silicon dioxide or niobium pentaoxide and silicon dioxide with the second reflectance coating.
Light splitting chip the most according to claim 2, it is characterised in that described intermediate layer is by two
Silicon oxide forms.
Light splitting chip the most according to claim 1, it is characterised in that described light splitting chip
Operation wavelength is 900-2500nm.
Light splitting chip the most according to claim 1, it is characterised in that described plurality of channels
It is 64 passages, 128 passages, 192 passages, 256 passages or 320 passages.
Light splitting chip the most according to claim 6, it is characterised in that from 0 passage to finally
The centre wavelength of one passage is gradually increased, and the precision of centre wavelength can reach ± 1nm.
8. the manufacture method of the light splitting chip described in a claim 1, it is characterised in that include
Following steps:
(1) photoetching passage and alignment mark on substrate, wherein photoetching comprises the steps of
A) pretreatment: whirl coating and front baking, spin coating photoresist on clean substrate, 80 DEG C-100 DEG C
Baking more than 10min；
B) exposure: the substrate that pretreatment is good is placed under mask plate and carries out uv-exposure；
C) development and after bake: using developer solution to develop the substrate after exposure, photoresist hides
Gear passage, exposes marked region and logical optical channel.60 DEG C of-100 DEG C of drying remain in an oven
The moisture of substrate surface；
D) it is coated with black chromium by vacuum coating mode；
E) concentration is NaOH solution or the acetone removal photoresist of 5%, stays passage to divide
Every line and alignment mark.
(2) on substrate prepared by step (1), it is coated with the first reflectance coating；
(3) it is coated with intermediate layer, on the first reflectance coating, repeats photoetching as required and go photoetching
The step of glue, till preparing the passage wanted；
(4) on described intermediate layer, the second reflectance coating it is coated with；
(5) back side at described substrate is coated with and cuts secondary peak film system.
The manufacture method of light splitting chip the most according to claim 8, it is characterised in that described
The method being coated with film is Vacuum Coating method.
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| CN111337129A (en) * | 2020-03-17 | 2020-06-26 | 江苏芯欣光电科技有限公司 | Spectrum chip, chip packaging structure and manufacturing method |
| CN111351574A (en) * | 2020-03-17 | 2020-06-30 | 江苏芯欣光电科技有限公司 | Spectrum chip, chip packaging structure and manufacturing method |
| CN111351573A (en) * | 2020-03-17 | 2020-06-30 | 江苏芯欣光电科技有限公司 | Spectrum chip, chip packaging structure and manufacturing method |
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