CN111337129A - Spectrum chip, chip packaging structure and manufacturing method - Google Patents

Spectrum chip, chip packaging structure and manufacturing method Download PDF

Info

Publication number
CN111337129A
CN111337129A CN202010186996.5A CN202010186996A CN111337129A CN 111337129 A CN111337129 A CN 111337129A CN 202010186996 A CN202010186996 A CN 202010186996A CN 111337129 A CN111337129 A CN 111337129A
Authority
CN
China
Prior art keywords
film
layer
main peak
index material
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010186996.5A
Other languages
Chinese (zh)
Inventor
周东平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Xinxin Photoelectric Technology Co ltd
Original Assignee
Jiangsu Xinxin Photoelectric Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Xinxin Photoelectric Technology Co ltd filed Critical Jiangsu Xinxin Photoelectric Technology Co ltd
Priority to CN202010186996.5A priority Critical patent/CN111337129A/en
Publication of CN111337129A publication Critical patent/CN111337129A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
    • G02B27/1013—Beam splitting or combining systems for splitting or combining different wavelengths for colour or multispectral image sensors, e.g. splitting an image into monochromatic image components on respective sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J2003/1213—Filters in general, e.g. dichroic, band

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Filters (AREA)

Abstract

The invention discloses a spectrum chip, a chip packaging structure and a manufacturing method, the technical scheme is that a main peak membrane system of the spectrum chip is provided with at least two layers of stacked interferometer light splitting structures, each interferometer light splitting structure comprises a first reflecting membrane stack, a resonant cavity layer and a second reflecting membrane stack which are sequentially stacked, the first reflecting membrane stack faces to a substrate, the resonant cavity layer is divided into a plurality of blocks which correspond to spectrum channels one by one, the blocks correspond to different spectrum channels, and light splitting is realized by setting light rays of wave bands.

Description

Spectrum chip, chip packaging structure and manufacturing method
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a spectrum chip, a chip packaging structure and a manufacturing method.
Background
The demand for high and ultra spectrometers in the fields of aerospace, unmanned aerial vehicles and the like is increasing. The modularization and miniaturization of the device are related to a mainstream development trend, and the core module of the spectrometer is a spectral splitting system, but in the current spectral splitting system, the bandwidth of a splitting chip is small.
Disclosure of Invention
In view of this, the technical scheme of the invention provides a spectrum chip, a chip packaging structure and a manufacturing method, which improve the spectral bandwidth.
In order to achieve the above purpose, the invention provides the following technical scheme:
a spectroscopy chip having a plurality of spectral channels, the spectroscopy chip comprising:
a substrate having opposing first and second surfaces;
a main peak film system group arranged on the first surface, wherein the main peak film system group comprises at least two layers of stacked interferometer light splitting structures; the interferometer light splitting structure comprises a first reflecting film stack, a resonant cavity layer and a second reflecting film stack which are sequentially stacked, wherein the first reflecting film stack faces the substrate; the resonant cavity layer is divided into a plurality of blocks which correspond to the spectral channels one by one;
a truncated peak film system arranged on the second surface and used for eliminating a spectrum secondary peak;
the first reflecting film stack, the second reflecting film stack and the truncated peak film system respectively comprise a plurality of high-refractive-index material film layers and a plurality of low-refractive-index material film layers which are alternately stacked; the resonant cavity layer is the high-refractive-index material film layer or the low-refractive-index material film layer; in the spectrum chip, the high refractive index material film layers and the low refractive index material film layers are alternately stacked.
Preferably, in the above-mentioned spectrum chip, the main peak film system group has at least one main peak film system, and different main peak film systems are located in different regions of the first surface and are used for splitting light of different wavebands;
the optical thickness of the resonant cavity layer in the main peak film system is equal to one half of the central wavelength of the corresponding light splitting wave band.
Preferably, in the above-mentioned spectrum chip, the spectrum chip is configured to split light in a visible infrared band of 400nm to 1000nm, has 64 spectrum channels, and has three main peak film sets, where different main peak film sets are located in different areas of the first surface and configured to split light in different bands.
Preferably, in the above-mentioned spectrum chip, three main peak film sets include:
the 1 st main peak film system group is used for splitting light at a wave band of 400nm-500nm, and is provided with 10 channels, the bandwidth is 10nm, and the channel interval is 10 nm;
the 2 nd main peak film system group is used for splitting light at a wave band of 500nm-900nm, and is provided with 44 channels, the bandwidth is 8nm-9nm, and the channel interval is 9.09;
the 3 rd main peak film system group is used for splitting light in a 900nm-1000nm wave band, and is provided with 10 channels, the bandwidth is 10nm, and the channel interval is 10 nm.
Preferably, in the above-mentioned spectrum chip, the 1 st main peak film system group has a 1 st main peak film system and a 2 nd main peak film system, two main peak film systems of the 1 st main peak film system group are located in different regions of the first surface, and have 5 spectrum channels, respectively, and both have two stacked interferometer light splitting structures.
Preferably, in the above-mentioned spectrum chip, in the 1 st main peak film system group, the 1 st main peak film system is used for splitting light in a 400nm-440nm band, and the central wavelength of the band is λ11Forming 5 said spectral channels with main peaks corresponding to 400nm, 410nm, 420nm, 430nm and 440nm, 420 nm;
in the 1 st main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H11The high refractive index material film layer of (a);
the first reflecting film stack has 2 layers of optical thicknesses which are all H11The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L11The low refractive index material film layer of (a);
the second reflecting film stack has 2 layers of optical thicknesses which are all H11The optical thickness of one layer of the low refractive index material film layer adjacent to the resonant cavity layer in the 2 layers of the low refractive index material film layers is 3L11The optical thickness of the other layer of the low refractive index material film layer is L11；
The surface of the 1 st main peak film system is also provided with a layer with the optical thickness L11The low refractive index material film layer of (a);
wherein L is11＝H11＝λ11/4。
Preferably, in the above-mentioned spectrum chip, in the 1 st main peak film system group, the 2 nd main peak film system is used for splitting light in a 450nm-490nm band with a central wavelength λ12Forming 5 said spectral channels with main peaks corresponding to 450nm, 460nm, 470nm, 480nm and 490 nm;
in the 2 nd main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H12The high refractive index material film layer of (a);
the first reflecting film stack has 2 layers of optical thicknesses H12The optical thickness of one layer of the low refractive index material film layer adjacent to the resonant cavity layer in the 3 layers of the low refractive index material film layers is 3L12And the optical thicknesses of the other two low-refractive-index material film layers are L12；
The second reflecting film stack has 2 layers of optical thickness H12The optical thickness of one layer of the low refractive index material film layer adjacent to the resonant cavity layer in the 2 layers of the low refractive index material film layers is 3L12The optical thickness of the other layer of the low refractive index material film layer is L12；
The surface of the No. 2 main peak film system is also provided with a layer of optical thickness L12The low refractive index material film layer of (a);
wherein L is12＝H12＝λ12/4。
Preferably, in the above-mentioned spectrum chip, the 2 nd main peak film system group has a 1 st main peak film system to a 4 th main peak film system, four main peak film systems of the 2 nd main peak film system group are located in different regions of the first surface, the 1 st main peak film system to the 4 th main peak film system respectively have 10, 12 and 10 spectrum channels, and the four main peak film systems all have two stacked interferometer light splitting structures.
Preferably, in the above-mentioned spectral chip, in the 2 nd main peak film system group, the 1 st main peak film system thereofUsed for splitting the wave band of 500nm-581.51nm with the central wavelength of lambda21540.9nm, the main peak is formed corresponding to 500nm, (500+ △ lambda)21)nm、(500+2△λ21)nm、…、(500+9△λ21) 10 of said spectral channels at nm, △ λ21The bandwidth of the 1 st main peak film system;
in the 1 st main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H21The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H21The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L21The low refractive index material film layer of (a);
the second reflecting film stack has 3 layers of optical thicknesses H21The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L21The low refractive index material film layer of (a);
the surface of the 1 st main peak film system is also provided with a layer with the optical thickness L11The low refractive index material film layer of (a);
wherein L is21＝H21＝λ21/4。
Preferably, in the above-mentioned spectrum chip, in the 2 nd main peak film system group, the 2 nd main peak film system is used for splitting 590.9nm-690.9nm wave band, and the central wavelength of the wave band is λ22640.9nm, the main peak is 590.9nm, (590.9+ △ lambda)22)nm、(590.9+2△λ22)nm、…、(590.9+11△λ22) 12 of said spectral channels at nm, △ λ22The bandwidth of the 2 nd main peak film system;
in the 2 nd main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H22The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H22The high refractive index material film layer and 4 low refractive index material film layers, wherein in the 4 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L22And the optical thicknesses of the other three layers are L22；
The second reflecting film stack has 3 layers of optical thicknesses H22The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L22The low refractive index material film layer of (a);
the surface of the No. 2 main peak film system is also provided with a layer of optical thickness L22The low refractive index material film layer of (a);
wherein L is22＝H22＝λ22/4。
Preferably, in the above-mentioned spectrum chip, in the 2 nd main peak film system group, the 3 rd main peak film system is used for splitting light in a 700nm-800nm band, and the central wavelength of the band is λ23750nm, the main peak is formed corresponding to 700nm, (700+ △ lambda)23)nm、(700+2△λ23)nm、…、(700+11△λ23) 12 of said spectral channels at nm, △ λ23The bandwidth of the 3 rd main peak film system;
in the 3 rd main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H23The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H23The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L23The low refractive index material film layer of (a);
the second reflecting film stack has 3 layers of optical thicknesses H23The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L23The optical thicknesses of the other two layers are both L23；
The surface of the No. 3 main peak film system is also provided with a layer with the optical thickness L23The low refractive index material film layer of (a);
wherein L is23＝H23＝λ23/4。
Preferably, in the above-mentioned spectral chip, the 4 th main peak film system in the 2 nd main peak film system group is used forSplitting the 809.09nm-890.9nm wave band with central wavelength of lambda24The main peak is formed corresponding to 809.09nm, (809.09+ △ lambda) when the molecular weight is 850nm24)nm、(809.09+2△λ24)nm、…、(809.09+9△λ24) 10 of said spectral channels at nm, △ λ24The bandwidth of the 4 th main peak film system;
in the 4 th main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H24The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H24The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L24The low refractive index material film layer of (a);
the second reflecting film stack has 3 layers of optical thicknesses H24The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L24The optical thicknesses of the other two layers are both L24；
The surface of the 4 th main peak film system is also provided with a layer with the optical thickness L24The low refractive index material film layer of (a);
wherein L is24＝H24＝λ24/4。
Preferably, in the above-mentioned spectrum chip, the 3 rd main peak film system group has one main peak film system, and the main peak film system has two stacked interferometer spectroscopic structures.
Preferably, in the above-mentioned spectrum chip, in the 3 rd main peak film system group, the main peak film system is used for splitting light in a 900nm-1100nm band, and the central wavelength of the band is λ31The peak is 900nm, (900+ △ lambda) when the peak is 950nm31)nm、(900+2△λ31)nm、…、(900+9△λ31) 10 of said spectral channels at nm, △ λ31Is the bandwidth of the main peak film system;
in the main peak membrane system:
the resonant cavity layer is a layer with the optical thickness of 2H31The high refractive index materialA material film layer;
the first reflecting film stack has 3 layers of optical thicknesses which are all H31The high refractive index material film layer and 4 low refractive index material film layers, wherein in the 4 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L31And the optical thicknesses of the other three layers are L31；
The second reflecting film stack has 3 layers of optical thicknesses H31The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L31The optical thicknesses of the other two layers are both L31；
The main peak film system surface also has a layer of optical thickness L31The low refractive index material film layer of (a);
wherein L is31＝H31＝λ31/4。
The invention also provides a chip packaging structure, which comprises:
the spectrum chip and detector chip of the integral packaging, the said spectrum chip is the spectrum chip of any one of the above-mentioned; and the detector chip and the light-emitting side of the spectrum chip are relatively fixedly packaged.
The invention also provides a manufacturing method of the spectrum chip, which is characterized by comprising the following steps:
providing a substrate having a first surface and a second surface opposite to each other;
forming a main peak film system group on the first surface of the substrate, wherein the main peak film system group comprises at least two layers of stacked interferometer light splitting structures; the interferometer light splitting structure comprises a first reflecting film stack, a resonant cavity layer and a second reflecting film stack which are sequentially stacked, wherein the first reflecting film stack faces the substrate; the resonant cavity layer is divided into a plurality of blocks which correspond to the spectral channels one by one;
forming a truncated peak film system on the second surface of the substrate, wherein the truncated peak film system is used for eliminating a spectrum secondary peak;
the first reflecting film stack, the second reflecting film stack and the truncated peak film system respectively comprise a plurality of high-refractive-index material film layers and a plurality of low-refractive-index material film layers which are alternately stacked; the resonant cavity layer is the high-refractive-index material film layer or the low-refractive-index material film layer; in the spectrum chip, the high refractive index material film layers and the low refractive index material film layers are alternately stacked.
Preferably, in the above manufacturing method, the spectrum chip has a plurality of main peak film series groups, and each main peak film series group has at least one main peak film series; setting the spectrum chip to have N main peak film systems, wherein N is a positive integer greater than 1;
synchronously forming the same layer film layer of the spectrum chip by adopting an etching process;
or, forming the same layer film layer of the spectrum chip by adopting a deposition process.
As can be seen from the above description, in the spectrum chip, the chip package structure and the manufacturing method provided in the technical scheme of the present invention, the main peak film system of the spectrum chip is provided with at least two stacked interferometer light splitting structures, each interferometer light splitting structure includes a first reflective film stack, a resonant cavity layer and a second reflective film stack, which are sequentially stacked, the first reflective film stack faces the substrate, the resonant cavity layer is divided into a plurality of blocks corresponding to the spectrum channels one by one, and different blocks correspond to different spectrum channels, so as to implement light splitting by setting light of a wavelength band, so that each layer of interferometer light splitting structure is a half-wave narrow-band filter, and the multi-layered interferometer light splitting structure can effectively improve a light splitting bandwidth, increase channel energy and improve a channel signal-to-noise ratio.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a top view of a light emitting surface of a spectrum chip according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of the spectroscopic chip of FIG. 1 taken along the A-A' direction;
FIGS. 3-9 are spectral plots provided by embodiments of the present invention;
fig. 10 is a schematic diagram of a chip package structure according to an embodiment of the invention;
FIG. 11 is a flowchart of a method for manufacturing a spectrum chip by using an etching process according to an embodiment of the present invention;
FIG. 12 is a flow chart of a deposition process for fabricating a spectroscopy chip for use in embodiments of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a top view of a light emitting surface of a spectrum chip according to an embodiment of the present invention, and fig. 2 is a sectional view of the spectrum chip shown in fig. 1 taken along a direction a-a', where the spectrum chip has a plurality of spectrum channels 000, and the spectrum channels 000 are arranged in an array, such as an area array or a linear array, and are not limited to the area array arrangement shown in fig. 1.
The spectrum chip includes: a substrate 010 having opposing first and second surfaces 011 and 012; a main peak film system group 020 arranged on the first surface 011; and a truncated peak film series 030 provided on the second surface 012, for eliminating spectral secondary peaks.
The main peak film system 020 comprises at least two layers of laminated interferometer spectroscopic structures 021; the interferometer light splitting structure 021 comprises a first reflective film stack 0211, a resonant cavity layer 0212 and a second reflective film stack 0213 which are sequentially stacked, wherein the first reflective film stack 0211 faces the substrate 010; the resonant cavity layer 0212 is divided into a plurality of blocks corresponding to the spectral channels 000 one to one. In the embodiment shown in fig. 2, a two-layer stacked interferometer spectroscopic structure 021 is shown, but in another embodiment, a three-layer stacked structure may be used.
The first reflective film stack 0211, the second reflective film stack 0213 and the truncated peak film series 030 respectively comprise a plurality of high-refractive-index material film layers and a plurality of low-refractive-index material film layers which are alternately stacked; the resonant cavity layer 0212 is the high-refractive-index material film layer or the low-refractive-index material film layer; in the spectrum chip, the high refractive index material film layers and the low refractive index material film layers are alternately stacked, that is, in the direction pointing to the main peak film group 020 from the substrate 010, one layer of any two adjacent film layers is the high refractive index material film layer, and the other layer is the low refractive index material film layer.
As described above, all of the spectral channels 000 are arranged in an array. The main peak membrane system group 020 comprises a plurality of the spectrum channels 000, and in the same main peak membrane system group 020, the spectrum channels 000 can be positioned at any row and column position of the array. The main peak film system group 020 is provided with at least one main peak film system, and different main peak film systems are positioned in different regions of the first surface 011 and are used for splitting light of different wave bands; the optical thickness of the resonant cavity layer 0212 in the main peak film system is equal to one half of the central wavelength of the corresponding spectral band. In the same main peak film system, the light splitting structures 021 of different layers of interferometers are arranged oppositely, and the blocks of the resonant cavity layers 0212 of different layers are arranged oppositely one by one. In the whole spectrum chip, the blocks corresponding to the same spectrum channel 000 are arranged oppositely.
In the spectrum chip of the embodiment of the invention, a film system is designed as follows:
in embodiments of the present invention, the high-refractive-index material film includes, but is not limited to, Nb2O5、Ta2O5And TiO2The low refractive index material film layer includes, but is not limited to, SiO2. All the high-refractive-index material film layers in the spectrum chip can be made of the same material so as to be convenient to manufacture, and different materials can be adopted in other modes. Similarly, all the low refractive index material film layers can be made of the same material so as to be convenient for manufacturing, and in other modes, different materials can be adopted.
The spectrum chip provided by the embodiment of the invention is used for splitting visible infrared bands of 400nm-1000nm, is provided with 64 spectrum channels 000 and three main peak film system groups 020, and different main peak film system groups 020 are positioned in different areas of the first surface 011 and are used for splitting different bands. The spectrum chip is a narrow-band filter. In the visible light and near infrared bands of the traditional half-wave narrowband filter, the bandwidth of a single spectrum channel is only 4-5nm, for example, a double-layer interferometer light splitting structure 021 is adopted in the embodiment of the application, a spectrum chip is the double-half-wave narrowband filter, the bandwidth of a single spectrum channel 000 can be increased to about 10nm, and if the three-layer interferometer light splitting structure 021 is adopted, the spectrum chip is the three-half-wave narrowband filter, the bandwidth of the single spectrum channel 000 can be increased to about 20 nm.
In the embodiment of the invention, the spectral channel 000 with different wave bands and close bandwidth is obtained by adjusting the thickness of the resonant cavity layer 0212 of the narrow-band filter within a certain wavelength range. The truncated peak film series 030 outside the narrowband filter is deposited on a second surface opposite to the main peak film series, so that the required spectrum can be obtained at the position corresponding to each spectral channel 000.
In the spectrum chip of the embodiment of the present invention, the three main peak film sets 020 include: the 1 st main peak film system group is used for splitting light at a wave band of 400nm-500nm, and is provided with 10 channels, the bandwidth is 10nm, and the channel interval is 10 nm; the 2 nd main peak film system group is used for splitting light at a wave band of 500nm-900nm, and is provided with 44 channels, the bandwidth is 8nm-9nm, and the channel interval is 9.09; the 3 rd main peak film system group is used for splitting light in a 900nm-1000nm wave band, and is provided with 10 channels, the bandwidth is 10nm, and the channel interval is 10 nm.
The 1 st main peak film system group is provided with a 1 st main peak film system and a 2 nd main peak film system, two main peak film systems of the 1 st main peak film system group are positioned in different regions of the first surface 011 and are respectively provided with 5 spectral channels 000, and the two main peak film systems are both provided with two stacked interferometer light splitting structures 021.
In the 1 st main peak film system group, the 1 st main peak film system is used for splitting light of 400nm-440nm wave band, and the central wavelength of the wave band is lambda11The 5 spectral channels 000 with main peaks corresponding to 400nm, 410nm, 420nm, 430nm and 440nm are formed at 420 nm. The total channel number of 64 spectral channels 000 is set to be 0-63 in sequence, the total number of the 5 spectral channels 000 is set to be 0-4 in sequence, and the channel number of the 1 st main peak membrane system is set to be 0 '-4' in sequence.
The film system structure of the 1 st main peak film system is (LHLHL-2H-3LHLH)2L, specifically, in the 1 st main peak film system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H11The high refractive index material film layer of (a);
the first reflective film stack 0211 has 2 layers of optical thicknesses H11The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L11The low refractive index material film layer of (a);
the second reflective film stack 0213 has 2 layers of optical thicknesses H11The optical thickness of one of the 2 low refractive index material film layers adjacent to the resonant cavity layer 0212 is 3L11The optical thickness of the other layer of the low refractive index material film layer is L11；
The surface of the 1 st main peak film system is also provided with a layer with the optical thickness L11The low refractive index material film layer of (a);
wherein L is11＝H11＝λ11/4。
The truncated peak film system 030 opposite to the 1 st main peak film system is used for cutting off secondary peaks smaller than 380nm and in the range of 460-1100 nm, the truncated peak film system 030 does not need to be modulated, and a truncated peak film system 030 film system structure used by a conventional half-wave narrow-band filter can be adopted. The spectroscopic spectrum of the 1 st main peak film system is shown in FIG. 3.
In the 1 st main peak film system group, the 2 nd main peak film system is used for splitting light of a 450nm-490nm wave band, and the central wavelength of the wave band is lambda 12470, 5 of said spectral channels 000 with main peaks corresponding to 450nm, 460nm, 470nm, 480nm and 490nm are formed. The 5 spectral channels 000 have a total channel number of 5-9 in order, and the channel number of the 2 nd main peak membrane system is 0 '-4' in order.
The film system structure of the 2 nd main peak film system is (LHLH3L-2H-3LHLH)2L, specifically, in the 2 nd main peak film system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H12The high refractive index material film layer of (a);
the first reflective film stack 0211 has 2 layers of optical thicknesses H12The optical thickness of one of the 3 low refractive index material film layers adjacent to the resonant cavity layer 0212 is 3L12And the optical thicknesses of the other two low-refractive-index material film layers are L12；
The second reflective film stack 0213 has 2 layers of optical thickness H12The optical thickness of one of the 2 low refractive index material film layers adjacent to the resonant cavity layer 0212 is 3L12The optical thickness of the other layer of the low refractive index material film layer is L12；
The surface of the No. 2 main peak film system is also provided with a layer of optical thickness L12The low refractive index material film layer of (a);
wherein L is12＝H12＝λ12/4。
The truncated peak film system 030 opposite to the 2 nd main peak film system is used for cutting off secondary peaks smaller than 430nm and in the range of 510-1100 nm, and similarly, the truncated peak film system 030 does not need to be modulated and can adopt a truncated peak film system 030 film system structure used by a conventional half-wave narrowband filter. The spectroscopic spectrum of the 2 nd main peak film system is shown in FIG. 4.
The 2 nd main peak film system group has a 1 st main peak film system to a 4 th main peak film system, four main peak film systems of the 2 nd main peak film system group are located in different regions of the first surface 011, the 1 st main peak film system to the 4 th main peak film system respectively have 10, 12 and 10 spectrum channels 000, and the four main peak film systems all have two stacked interferometer light splitting structures 021.
In the 2 nd main peak film system group, the 1 st main peak film system is used for splitting light of a wave band of 500nm-581.51nm, and the central wavelength of the wave band is lambda21540.9nm, the main peak is formed corresponding to 500nm, (500+ △ lambda)21)nm、(500+2△λ21)nm、…、(500+9△λ21) 10 of said spectral channels 000, △ λ at nm21The bandwidth of the 1 st main peak film system; the total channel number of the 10 spectral channels 000 is 10-19 in sequence, and the channel number of the 1 st main peak membrane system is 0 '-9' in sequence.
The film system structure of the 1 st main peak film system is (LHLHL-2H-LHLH)2L, in particular the 1 st main peak membrane system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H21The high refractive index material film layer of (a);
the first reflective film stack 0211 has 3 layers of optical thicknesses which are all H21The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L21The low refractive index material film layer of (a);
the second reflective film stack 0213 has 3 layers of optical thicknesses H21The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L21The low refractive index material film layer of (a);
the surface of the 1 st main peak film system is also provided with a layer with the optical thickness L11The low refractive index material film layer of (a);
wherein L is21＝H21＝λ21/4。
The truncated peak film system 030 opposite to the 1 st main peak film system is used for cutting off secondary peaks smaller than 480nm and in the range of 600-1100 nm, and similarly, the truncated peak film system 030 does not need to be modulated and can adopt a truncated peak film system 030 film system structure used by a conventional half-wave narrowband filter. The spectroscopic spectrum of the 1 st main peak film system is shown in FIG. 5.
In the 2 nd main peak film system group, the 2 nd main peak film system is used for splitting 590.9nm-690.9nm wave band, and the central wavelength of the wave band is lambda22640.9nm, the main peak is 590.9nm, (590.9+ △ lambda)22)nm、(590.9+2△λ22)nm、…、(590.9+11△λ22) 12 of said spectral channels 000, △ λ at nm22The bandwidth of the 2 nd main peak film system; the total channel number of the 12 spectral channels 000 is 20-31 in order, and the channel number of the 2 nd main peak membrane system is 0 '-11' in order.
The film system structure of the 2 nd main peak film system is (LHLHLH 3L-2H-LHLH)2L, in particular in the 2 nd main peak membrane system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H22The high refractive index material film layer of (a);
the first reflective film stack 0211 has 3 layers of optical thicknesses which are all H22The high refractive index material film layer and 4 low refractive index material film layers, wherein in the 4 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer 0212 is 3L22And the optical thicknesses of the other three layers are L22；
The second reflective film stack 0213 has 3 layers of optical thicknesses H22The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L22The low refractive index material film layer of (a);
the surface of the No. 2 main peak film system is also provided with a layer of optical thickness L22The low refractive index material film layer of (a);
wherein L is22＝H22＝λ22/4。
The truncated peak film system 030 opposite to the 2 nd main peak film system is used for cutting off secondary peaks smaller than 570nm and in the range of 710-1100 nm, and similarly, the truncated peak film system 030 does not need to be modulated and can adopt a truncated peak film system 030 film system structure used by a conventional half-wave narrowband filter. The spectroscopic spectrum of the 2 nd main peak film system is shown in FIG. 6. Only the spectra corresponding to 10 spectral channels 000 out of the 12 spectral channels 000 are shown in fig. 6.
In the 2 nd main peak film system group, the 3 rd main peak film system is used for splitting light in a 700nm-800nm wave band, and the central wavelength of the wave band is lambda23750nm, the main peak is formed corresponding to 700nm, (700+ △ lambda)23)nm、(700+2△λ23)nm、…、(700+11△λ23) 12 of said spectral channels 000, △ λ at nm23The bandwidth of the 3 rd main peak film system; the total channel number of the 12 spectral channels 000 is 32-43 in order, and the channel number of the 3 rd main peak membrane system is 0 '-11' in order.
The film system structure of the 3 rd main peak film system is (LHLHLHL-2H-3 LHLH)2L, in particular in the 3 rd main peak membrane system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H23The high refractive index material film layer of (a);
the first reflective film stack 0211 has 3 layers of optical thicknesses which are all H23The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L23The low refractive index material film layer of (a);
the second reflective film stack 0213 has 3 layers of optical thicknesses H23The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, one layer adjacent to the resonant cavity layer 0212 has an optical thickness of 3L23The optical thicknesses of the other two layers are both L23；
The surface of the No. 3 main peak film system is also provided with a layer with the optical thickness L23The low refractive index material film layer of (a);
wherein L is23＝H23＝λ23/4。
The truncated peak film system 030 opposite to the 3 rd main peak film system is used for cutting off secondary peaks smaller than 680nm and in the range of 820-1100 nm, and similarly, the truncated peak film system 030 does not need to be modulated and can adopt a truncated peak film system 030 film system structure used by a conventional half-wave narrowband filter. The spectroscopic spectrum of the 3 rd main peak film system is shown in FIG. 7. Only the spectra corresponding to 10 spectral channels 000 out of the 12 spectral channels 000 are shown in fig. 7.
In the 2 nd main peak film system group, the 4 th main peak film system is used for splitting 809.09nm-890.9nm wave band, and the central wavelength of the wave band is lambda24The main peak is formed corresponding to 809.09nm, (809.09+ △ lambda) when the molecular weight is 850nm24)nm、(809.09+2△λ24)nm、…、(809.09+9△λ24) 10 of said spectral channels at nm, △ λ24The bandwidth of the 4 th main peak film system; the 10 spectral channels 000 have a total channel number of 44-53 in order, and the channel number of the 4 th main peak membrane system is 0 '-9' in order.
The film system structure of the 4 th main peak film system is (LHLHLHL-2H-3 LHLH)2L, in particular in the 3 rd main peak membrane system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H24The high refractive index material film layer of (a);
the first reflective film stack 0211 has 3 layers of optical thicknesses which are all H24The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L24The low refractive index material film layer of (a);
the second reflective film stack 0213 has 3 layers of optical thicknesses H24The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, one layer adjacent to the resonant cavity layer 0212 has an optical thickness of 3L24The optical thicknesses of the other two layers are both L24；
The surface of the 4 th main peak film system is also provided with a layer with the optical thickness L24The low refractive index material film layer of (a);
wherein L is24＝H24＝λ24/4。
The truncated peak film system 030 opposite to the 4 th main peak film system is used for cutting off secondary peaks smaller than 7900nm and in the range of 910-1100 nm, and similarly, the truncated peak film system 030 does not need to be modulated and can adopt a truncated peak film system 030 film system structure used by a conventional half-wave narrowband filter. The spectroscopic spectrum of the 4 th main peak film system is shown in FIG. 8.
The 3 rd main peak film system group is provided with a main peak film system which is provided with two stacked interferometer light splitting structures.
In the 3 rd main peak film system group, the main peak film system is used for splitting light of 900nm-1100nm wave band, and the central wavelength of the wave band is lambda31The peak is 900nm, (900+ △ lambda) when the peak is 950nm31)nm、(900+2△λ31)nm、…、(900+9△λ31) 10 of said spectral channels at nm, △ λ31Is the bandwidth of the main peak film system; the total channel number of the 10 spectral channels 000 is 54-63 in order, and the channel number in the main peak membrane system is 0 '-11' in order.
The film system structure of the main peak film system is (LHLHLH3L-2H-3 LHLH)2L, in particular in the main peak membrane system:
the resonant cavity layer 0212 is a layer with optical thickness of 2H31The high refractive index material film layer of (a);
the first reflective film stack 0211 has 3 layers of optical thicknesses which are all H31The high refractive index material film layer and 4 low refractive index material film layers, wherein in the 4 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer 0212 is 3L31And the optical thicknesses of the other three layers are L31；
The second reflective film stack 0213 has 3 layers of optical thicknesses H31The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, one layer adjacent to the resonant cavity layer 0212 has an optical thickness of 3L31The optical thicknesses of the other two layers are both L31；
The main peak film system surface also has a layer of optical thickness L31The low refractive index material film layer of (a);
wherein L is31＝H31＝λ31/4。
The truncated peak film system 030 with the opposite main peak film system is used for cutting off secondary peaks smaller than 880nm and in the range of 120-1100 nm, and similarly, the truncated peak film system 030 does not need to be modulated and can adopt a truncated peak film system 030 film system structure used by a conventional half-wave narrowband filter. The spectral spectrum of the main peak film system is shown in FIG. 6. Only the spectra corresponding to 10 spectral channels 000 out of the 12 spectral channels 000 are shown in fig. 6.
In the existing narrow-band filter, when the bandwidth of a spectral channel is greater than a certain value, if a single half-wave film system is adopted, the cut-off depth sheet is low, the spectral performance is affected, and the separation of the channel spectrum cannot be realized.
Based on the foregoing embodiment, another embodiment of the present invention further provides a chip packaging structure, where the chip packaging structure is shown in fig. 10, and fig. 10 is a schematic diagram of the chip packaging structure provided in the embodiment of the present invention, where the chip packaging structure includes: the spectrum chip 040 and the detector chip 041 are integrally packaged, and the spectrum chip 040 is the spectrum chip in the embodiment; the detector chip 041 and the light-emitting side of the spectrum chip 040 are relatively fixedly packaged.
The detector chip 041 and the spectrum chip 040 can be bonded and fixed by a transparent adhesive layer 042. The light-emitting side of the spectrum chip 040 is the side of the second reflective film stack, and the optical thickness difference of the spectrum channel is in the nanometer level, so that the detector chip 041 and the spectrum chip 040 can be smoothly bonded and fixed by the transparent adhesive layer 042.
The chip packaging structure provided by the embodiment of the invention adopts the spectrum chip provided by the embodiment, the spectrum chip has the advantages of small volume and compact structure, is easy to combine with a detector chip, and is convenient for modularization and miniaturization of a spectrometer. And the bandwidth of a single spectrum channel is larger, the channel energy is increased, and the signal-to-noise ratio is improved.
Based on the above embodiment, another embodiment of the present invention further provides a manufacturing method of a spectrum chip, where the manufacturing method includes:
step S01: a substrate is provided having opposing first and second surfaces.
Step S02: and forming a main peak film series group on the first surface of the substrate.
The main peak film system group comprises at least two layers of stacked interferometer light splitting structures; the interferometer light splitting structure comprises a first reflecting film stack, a resonant cavity layer and a second reflecting film stack which are sequentially stacked, wherein the first reflecting film stack faces the substrate; the resonant cavity layer is divided into a plurality of blocks which correspond to the spectral channels one by one.
Step S03: and forming a truncated peak film system on the second surface of the substrate, wherein the truncated peak film system is used for eliminating the spectrum secondary peak.
The first reflecting film stack, the second reflecting film stack and the truncated peak film system respectively comprise a plurality of high-refractive-index material film layers and a plurality of low-refractive-index material film layers which are alternately stacked; the resonant cavity layer is the high-refractive-index material film layer or the low-refractive-index material film layer; in the spectrum chip, the high refractive index material film layers and the low refractive index material film layers are alternately stacked.
Optionally, the spectrum chip has a plurality of main peak film series groups, and each main peak film series group has at least one main peak film series; and setting the spectrum chip to have N main peak membrane systems, wherein N is a positive integer greater than 1. Synchronously forming the same layer film layer of the spectrum chip by adopting an etching process; or, forming the same layer film layer of the spectrum chip by adopting a deposition process.
The manufacturing method of the embodiment of the invention can manufacture the spectrum chip of the embodiment, and has the advantages of simple manufacturing process and low manufacturing cost.
The manufacturing method of the embodiment of the invention comprises the following process flows:
if the spectrum chip is manufactured by adopting an etching process, the flow chart is shown in fig. 11, fig. 11 is the flow chart for manufacturing the spectrum chip by adopting the etching process provided by the embodiment of the invention, and the flow chart of the etching process comprises the following steps:
1. and (4) designing a photoetching plate.
(1) Nanometer mask lithography: 7 main peak film systems mask photolithography mask +7 truncated peak film systems mask photolithography mask.
The spectrum channel of the spectrum chip is composed of 7 film systems, and the 7 film systems are the 7 main peak film systems and the 7 truncated peak film systems corresponding to the main peak film systems, so that 14 film system mask reticles need to be designed through the step S1 for depositing the 7 main peak film systems and the 7 truncated peak film systems corresponding to the main peak film systems.
(2) And (3) combined alignment photoetching plate: 8 blocks of photolithography.
In the 7 film systems, the channel intervals of 400-490nm band and 900-1000nm band are all 10nm, so simultaneous etching or deposition can be adopted, at most 10 spectral channels in the film system need 8 photolithography masks, if the 10 spectral channels are numbered as:
0-9,9＝1*23+0*22+0*21+1*20
the 500-900nm channel interval is 9.09nm, the maximum number of the corresponding 12 spectral channels in the film system also needs 8 photolithography masks, if the 12 spectral channels are set as the following numbers:
0-12,12＝1*23+0*22+1*21+1*20
2. and (4) nano masking.
A special film layer can bear high-temperature baking of a coated film, can be removed through a chemical solvent after the coated film is finished, protects parts which do not need to be coated, needs to be coated, is exposed through a photoetching process, is removed through the chemical solvent, leaves a blank area of a substrate, and can be deposited to form the required film layer. It is necessary to design the nanomask through step S2.
3. And (4) repeating the steps of nanometer mask, photoetching, the first reflecting film stack and the resonant cavity layer for 7 times.
Since 64 spectral channels are composed of 7 film systems, and 7 film layers need to be deposited, it is necessary to repeat steps S2-S4 7 times to form the first reflective film stack and the unetched resonator layer in the first-layer interferometer spectroscopic structure in 7 film systems. Since this embodiment uses an etching process, the thickness of the resonator layer is the largest of the deposited 7 film systems.
4. Combined photoetching + etching resonant cavity layer
The combined photoetching and etching resonant cavity layer adopts a combined overlay process, the optical thickness of the resonant cavity layer is changed according to the channel interval by the thickness d of each etching, and the optical thickness needs to be converted into the actual physical thickness. The optical thickness of the etched-out film is nd, n is the refractive index of the film, and d is the actual physical thickness of the film, so the actual physical thickness can be determined based on the optical thickness of the resonator layer. The spectrum channels of each film system are numbered 0, 1, 2, combined photoetching is carried out through steps S5-S6, and etching is carried out to reach the corresponding film thickness. In 7 film systems, the channels can be etched simultaneously with consistent spacing, thus requiring two different etch thickness series of processes.
Etching thickness series: d 20,d*21，d*22，d*23Different d have different etch thickness series.
5. And depositing a second reflecting film stack corresponding to the film system, a first reflecting film stack of the next interferometer light splitting structure and a resonant cavity layer.
Because the spectrum chip needs a double-half-wave film system which is formed by connecting two resonant cavity layers in series, the process is similar to the S2-S4 repeating process, the S7-S9 are repeated for 7 times in total, and a reflecting film stack needs to be deposited twice in each repeating process.
6. And then combining the photoetching and the etching of the resonant cavity layer.
The process of S10-S11 is the same as the process of S5-S6, and 2 times of etching with different thickness series are carried out.
7. And depositing a second reflecting film stack.
After the above process is completed, a second reflective film stack is formed on the second resonator layer through the processes of S12-S14.
8. And depositing truncated peak film systems on the second surface of the substrate corresponding to the film systems.
After the above processes are completed, truncated peak film systems are deposited on the second surface of the substrate corresponding to the film systems through the processes of S15-S17.
If the spectrum chip is manufactured by adopting a deposition process, the flow chart is shown in fig. 12, fig. 12 is the flow chart for manufacturing the spectrum chip by adopting the deposition process, and the etching process flow comprises the following steps:
1. and (4) designing a photoetching plate.
(1) Nanometer mask lithography: and (4) designing 14 film system mask photomasks for depositing 7 main peak film systems and 7 truncated peak film systems corresponding to the 7 main peak film systems through the step s1, wherein the process is the same as the etching process.
(2) And (3) combined alignment photoetching plate: 8 blocks of photolithography.
Unlike the etching process, if the smallest-sized spectral channel is etched most late in the etching process, the smallest-sized spectral channel is deposited in the cavity layer at one time.
2. Nanometer mask + photoetching + first reflective film stack and resonant cavity layer: the same etching process is repeated 7 times, namely the s2-s4 process is repeated 7 times, and the first deposited resonant cavity layer is the resonant cavity layer with the minimum thickness.
3. Combined lithography + deposition of the resonator layer.
The combined photoetching and deposition resonant cavity layer adopts a combined photoetching process, the actual physical thickness d of each deposition is numbered 0, 1, 2 and … aiming at the self optical channel of each film system, and the combined photoetching is carried out through steps s5-s6 to carry out deposition so as to reach the corresponding film thickness. In 7 film systems, the channels can be deposited (etched) simultaneously with consistent spacing, so two series of processes with different deposition thicknesses are required, the spectral channels are 0-9, 0-11, and 4 depositions are required.
The series of deposition thicknesses is d x 20，d*21，d*22，d*23Different d have different deposition thickness series.
4. And depositing a second reflecting film stack corresponding to the film system, a first reflecting film stack of the next interferometer light splitting structure and a resonant cavity layer.
Due to the fact that a double-half-wave film system is needed, the double-half-wave film system is formed by connecting two resonant cavities in series, the process is similar to the s2-s4 repeating process, the s7-s9 are repeated for 7 times, and the reflecting film stack needs to be deposited twice in each repeating process.
5. And then combining the photoetching and depositing a resonant cavity layer.
The s10-s11 process was identical to the s5-s6 process described above, with 4 series of depositions of different deposition thicknesses.
6. And depositing a second reflecting film stack.
After the above process is completed, a second reflective film stack is formed on the second resonator layer through the process of s12-s 14.
7. And depositing truncated peak film systems on the second surface of the substrate corresponding to the film systems.
After the above process is completed, the truncated peak film systems are deposited on the second surface of the substrate corresponding to the film systems through the processes of s15-s 17.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the chip package structure and the manufacturing method disclosed by the embodiment, since the chip package structure and the manufacturing method correspond to the spectrum chip disclosed by the embodiment, the description is relatively simple, and relevant points can be described by referring to the corresponding part of the spectrum chip.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (17)

1. A spectroscopy chip having a plurality of spectral channels, the spectroscopy chip comprising:
a substrate having opposing first and second surfaces;
a main peak film system group arranged on the first surface, wherein the main peak film system group comprises at least two layers of stacked interferometer light splitting structures; the interferometer light splitting structure comprises a first reflecting film stack, a resonant cavity layer and a second reflecting film stack which are sequentially stacked, wherein the first reflecting film stack faces the substrate; the resonant cavity layer is divided into a plurality of blocks which correspond to the spectral channels one by one;
a truncated peak film system arranged on the second surface and used for eliminating a spectrum secondary peak;
the first reflecting film stack, the second reflecting film stack and the truncated peak film system respectively comprise a plurality of high-refractive-index material film layers and a plurality of low-refractive-index material film layers which are alternately stacked; the resonant cavity layer is the high-refractive-index material film layer or the low-refractive-index material film layer; in the spectrum chip, the high refractive index material film layers and the low refractive index material film layers are alternately stacked.
2. The spectroscopy chip of claim 1, wherein the set of main peak film systems has at least one main peak film system, and different main peak film systems are located in different regions of the first surface for splitting light of different wavelength bands;
the optical thickness of the resonant cavity layer in the main peak film system is equal to one half of the central wavelength of the corresponding light splitting wave band.
3. The spectroscopic chip of claim 1 or 2, wherein the spectroscopic chip is configured to split light in the visible-infrared region of 400nm to 1000nm, has 64 spectral channels, and has three main peak film system groups, and different main peak film system groups are located in different regions of the first surface and configured to split light in different wavelength bands.
4. The spectroscopy chip of claim 3, wherein the three main peak film sets comprise:
the 1 st main peak film system group is used for splitting light at a wave band of 400nm-500nm, and is provided with 10 channels, the bandwidth is 10nm, and the channel interval is 10 nm;
the 2 nd main peak film system group is used for splitting light at a wave band of 500nm-900nm, and is provided with 44 channels, the bandwidth is 8nm-9nm, and the channel interval is 9.09;
the 3 rd main peak film system group is used for splitting light in a 900nm-1000nm wave band, and is provided with 10 channels, the bandwidth is 10nm, and the channel interval is 10 nm.
5. The spectroscopic chip of claim 4, wherein the 1 st main peak film system has a 1 st main peak film system and a 2 nd main peak film system, and the two main peak film systems of the 1 st main peak film system are located at different regions of the first surface, respectively having 5 of the spectroscopic channels, both having two stacked interferometer spectroscopic structures.
6. The spectroscopy chip of claim 5, wherein the 1 st main peak film in the 1 st main peak film set is used for splitting light in a 400nm-440nm wavelength band with a center wavelength λ11Forming 5 said spectral channels with main peaks corresponding to 400nm, 410nm, 420nm, 430nm and 440nm, 420 nm;
in the 1 st main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H11The high refractive index material film layer of (a);
the first reflecting film stack has 2 layers of optical thicknesses which are all H11The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L11The low refractive index material film layer of (a);
the second reflective filmThe stack has 2 layers of optical thickness all of H11The optical thickness of one layer of the low refractive index material film layer adjacent to the resonant cavity layer in the 2 layers of the low refractive index material film layers is 3L11The optical thickness of the other layer of the low refractive index material film layer is L11；
The surface of the 1 st main peak film system is also provided with a layer with the optical thickness L11The low refractive index material film layer of (a);
wherein L is11＝H11＝λ11/4。
7. The spectroscopy chip of claim 5, wherein the 2 nd main peak film in the 1 st main peak film set is used for splitting light in a wavelength band between 450nm and 490nm, and the wavelength band has a center wavelength λ12Forming 5 said spectral channels with main peaks corresponding to 450nm, 460nm, 470nm, 480nm and 490 nm;
in the 2 nd main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H12The high refractive index material film layer of (a);
the first reflecting film stack has 2 layers of optical thicknesses H12The optical thickness of one layer of the low refractive index material film layer adjacent to the resonant cavity layer in the 3 layers of the low refractive index material film layers is 3L12And the optical thicknesses of the other two low-refractive-index material film layers are L12；
The second reflecting film stack has 2 layers of optical thickness H12The optical thickness of one layer of the low refractive index material film layer adjacent to the resonant cavity layer in the 2 layers of the low refractive index material film layers is 3L12The optical thickness of the other layer of the low refractive index material film layer is L12；
The surface of the No. 2 main peak film system is also provided with a layer of optical thickness L12Said low ofA refractive index material film layer;
wherein L is12＝H12＝λ12/4。
8. The spectroscopic chip of claim 4, wherein the 2 nd main peak film system group has a 1 st main peak film system to a 4 th main peak film system, four main peak film systems of the 2 nd main peak film system group are located at different regions of the first surface, the 1 st main peak film system to the 4 th main peak film system have 10, 12 and 10 spectral channels, respectively, and the four main peak film systems each have two stacked interferometer spectroscopic structures.
9. The spectroscopy chip of claim 8, wherein the 1 st main peak film in the 2 nd main peak film set is used for splitting light in a wavelength range of 500nm-581.51nm, and the wavelength range is λ21540.9nm, the main peak is formed corresponding to 500nm, (500+ △ lambda)21)nm、(500+2△λ21)nm、…、(500+9△λ21) 10 of said spectral channels at nm, △ λ21The bandwidth of the 1 st main peak film system;
in the 1 st main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H21The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H21The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L21The low refractive index material film layer of (a);
the second reflecting film stack has 3 layers of optical thicknesses H21The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L21The low refractive index material film layer of (a);
the surface of the 1 st main peak film system is also provided with a layer with the optical thickness L11The low refractive index material film layer of (a);
wherein L is21＝H21＝λ21/4。
10. The method of claim 8The spectrum chip is characterized in that in the 2 nd main peak film system group, the 2 nd main peak film system is used for splitting 590.9nm-690.9nm wave band, and the central wavelength of the wave band is lambda22640.9nm, the main peak is 590.9nm, (590.9+ △ lambda)22)nm、(590.9+2△λ22)nm、…、(590.9+11△λ22) 12 of said spectral channels at nm, △ λ22The bandwidth of the 2 nd main peak film system;
in the 2 nd main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H22The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H22The high refractive index material film layer and 4 low refractive index material film layers, wherein in the 4 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L22And the optical thicknesses of the other three layers are L22；
The second reflecting film stack has 3 layers of optical thicknesses H22The optical thicknesses of the high-refractive-index material film layer and the 3 layers are L22The low refractive index material film layer of (a);
the surface of the No. 2 main peak film system is also provided with a layer of optical thickness L22The low refractive index material film layer of (a);
wherein L is22＝H22＝λ22/4。
11. The spectroscopy chip of claim 8, wherein the 3 rd main peak film in the 2 nd main peak film set is used for splitting light in a wavelength range of 700nm to 800nm, and the wavelength range is centered at λ23750nm, the main peak is formed corresponding to 700nm, (700+ △ lambda)23)nm、(700+2△λ23)nm、…、(700+11△λ23) 12 of said spectral channels at nm, △ λ23The bandwidth of the 3 rd main peak film system;
in the 3 rd main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H23The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H23The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L23The low refractive index material film layer of (a);
the second reflecting film stack has 3 layers of optical thicknesses H23The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L23The optical thicknesses of the other two layers are both L23；
The surface of the No. 3 main peak film system is also provided with a layer with the optical thickness L23The low refractive index material film layer of (a);
wherein L is23＝H23＝λ23/4。
12. The spectroscopy chip of claim 8, wherein the 4 th main peak film in the 2 nd main peak film group is used for splitting light in a wavelength range from 809.09nm to 890.9nm, and the wavelength range has a center wavelength λ24The main peak is formed corresponding to 809.09nm, (809.09+ △ lambda) when the molecular weight is 850nm24)nm、(809.09+2△λ24)nm、…、(809.09+9△λ24) 10 of said spectral channels at nm, △ λ24The bandwidth of the 4 th main peak film system;
in the 4 th main peak film system:
the resonant cavity layer is a layer with the optical thickness of 2H24The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H24The optical thicknesses of the high-refractive-index material film layer and the 4 layers are L24The low refractive index material film layer of (a);
the second reflecting film stack has 3 layers of optical thicknesses H24The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L24The optical thicknesses of the other two layers are both L24；
The surface of the 4 th main peak film system is also provided with a layer with the optical thickness L24The low refractive index material film layer of (a);
wherein L is24＝H24＝λ24/4。
13. The spectroscopy chip of claim 4, wherein the 3 rd main peak film series group has one main peak film series having two stacked interferometer spectroscopic structures.
14. The spectroscopy chip of claim 13, wherein the main peak film of the 3 rd main peak film set is used for splitting the 900nm-1100nm band with a center wavelength λ31The peak is 900nm, (900+ △ lambda) when the peak is 950nm31)nm、(900+2△λ31)nm、…、(900+9△λ31) 10 of said spectral channels at nm, △ λ31Is the bandwidth of the main peak film system;
in the main peak membrane system:
the resonant cavity layer is a layer with the optical thickness of 2H31The high refractive index material film layer of (a);
the first reflecting film stack has 3 layers of optical thicknesses which are all H31The high refractive index material film layer and 4 low refractive index material film layers, wherein in the 4 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L31And the optical thicknesses of the other three layers are L31；
The second reflecting film stack has 3 layers of optical thicknesses H31The high refractive index material film layer and 3 low refractive index material film layers, wherein in the 3 low refractive index material film layers, the optical thickness of one layer adjacent to the resonant cavity layer is 3L31The optical thicknesses of the other two layers are both L31；
The main peak film system surface also has a layer of optical thickness L31The low refractive index material film layer of (a);
wherein L is31＝H31＝λ31/4。
15. A chip package structure, comprising:
an integrally packaged spectrum chip and a detector chip, wherein the spectrum chip is the spectrum chip as claimed in any one of claims 1 to 14; and the detector chip and the light-emitting side of the spectrum chip are relatively fixedly packaged.
16. A manufacturing method of a spectrum chip is characterized by comprising the following steps:
providing a substrate having a first surface and a second surface opposite to each other;
forming a main peak film system group on the first surface of the substrate, wherein the main peak film system group comprises at least two layers of stacked interferometer light splitting structures; the interferometer light splitting structure comprises a first reflecting film stack, a resonant cavity layer and a second reflecting film stack which are sequentially stacked, wherein the first reflecting film stack faces the substrate; the resonant cavity layer is divided into a plurality of blocks which correspond to the spectral channels one by one;
forming a truncated peak film system on the second surface of the substrate, wherein the truncated peak film system is used for eliminating a spectrum secondary peak;
the first reflecting film stack, the second reflecting film stack and the truncated peak film system respectively comprise a plurality of high-refractive-index material film layers and a plurality of low-refractive-index material film layers which are alternately stacked; the resonant cavity layer is the high-refractive-index material film layer or the low-refractive-index material film layer; in the spectrum chip, the high refractive index material film layers and the low refractive index material film layers are alternately stacked.
17. The manufacturing method of claim 15, wherein the spectrum chip has a plurality of main peak film series, and each main peak film series has at least one main peak film series; setting the spectrum chip to have N main peak film systems, wherein N is a positive integer greater than 1;
synchronously forming the same layer film layer of the spectrum chip by adopting an etching process;
or, forming the same layer film layer of the spectrum chip by adopting a deposition process.
CN202010186996.5A 2020-03-17 2020-03-17 Spectrum chip, chip packaging structure and manufacturing method Pending CN111337129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010186996.5A CN111337129A (en) 2020-03-17 2020-03-17 Spectrum chip, chip packaging structure and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010186996.5A CN111337129A (en) 2020-03-17 2020-03-17 Spectrum chip, chip packaging structure and manufacturing method

Publications (1)

Publication Number Publication Date
CN111337129A true CN111337129A (en) 2020-06-26

Family

ID=71184523

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010186996.5A Pending CN111337129A (en) 2020-03-17 2020-03-17 Spectrum chip, chip packaging structure and manufacturing method

Country Status (1)

Country Link
CN (1) CN111337129A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1614451A (en) * 2004-11-05 2005-05-11 中国科学院上海技术物理研究所 Integrated narrow-band filter
CN1737613A (en) * 2005-09-02 2006-02-22 中国科学院上海技术物理研究所 Narrow-band filter array with multi-cavity structure
CN1862296A (en) * 2006-06-08 2006-11-15 上海欧菲尔光电技术有限公司 Micro-integrated narrow-band filter array and preparing method thereof
CN103091759A (en) * 2013-02-05 2013-05-08 李金宗 Narrow-band interference filter
CN103245999A (en) * 2013-04-26 2013-08-14 中国科学院上海技术物理研究所 Broad spectrum out-of-band rejection optical filter
CN105954833A (en) * 2016-06-24 2016-09-21 上海晶鼎光电科技有限公司 Light splitting chip and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1614451A (en) * 2004-11-05 2005-05-11 中国科学院上海技术物理研究所 Integrated narrow-band filter
CN1737613A (en) * 2005-09-02 2006-02-22 中国科学院上海技术物理研究所 Narrow-band filter array with multi-cavity structure
CN1862296A (en) * 2006-06-08 2006-11-15 上海欧菲尔光电技术有限公司 Micro-integrated narrow-band filter array and preparing method thereof
CN103091759A (en) * 2013-02-05 2013-05-08 李金宗 Narrow-band interference filter
CN103245999A (en) * 2013-04-26 2013-08-14 中国科学院上海技术物理研究所 Broad spectrum out-of-band rejection optical filter
CN105954833A (en) * 2016-06-24 2016-09-21 上海晶鼎光电科技有限公司 Light splitting chip and preparation method thereof

Similar Documents

Publication Publication Date Title
JP7086239B2 (en) Variable optical filter and wavelength-selective sensor based on it
KR101455545B1 (en) Optical bandpass filter system, in particular for multichannel spectral-selective measurements
US7907340B2 (en) Integrated narrow bandpass filter array and a method for fabrication thereof
US11506538B2 (en) Optical filter, optical filter system, spectrometer and method of fabrication thereof
JP6931351B2 (en) Optical detection device and manufacturing method of optical detection device
KR20200099832A (en) Multilayered meta lens and optical apparatus including the same
JP7099786B2 (en) Methods of Changing the First Reflection Band of Optical Laminates, Optical Systems, and Oriented Polymer Multilayer Optical Films
JP7303633B2 (en) Multispectral imaging device
JP5601190B2 (en) Wavelength selective infrared detector
WO2022051971A1 (en) Imaging optical system, imaging device and electronic device
JP2023068012A (en) Photoresist as opaque aperture mask on multispectral filter arrays
JP5573623B2 (en) Wavelength selection filter
CN111337129A (en) Spectrum chip, chip packaging structure and manufacturing method
CN111351574A (en) Spectrum chip, chip packaging structure and manufacturing method
JP2024007494A (en) Multispectral filter matrix with curved fabry-perot filters and methods for manufacturing the same
JPH1078510A (en) Filter
JP5834694B2 (en) Bandpass filter
CN111351573A (en) Spectrum chip, chip packaging structure and manufacturing method
TWI323481B (en) Ambient light filter structure
CN219871836U (en) Optical film structure and optical device
US20230083948A1 (en) Multispectral Imaging CMOS Sensor
JPH08160220A (en) Optical multilayer film filter
CN117191190A (en) Integrated broadband micro-optical electro-mechanical Fabry-Perot filter chip array and manufacturing method thereof
CN117075243A (en) Multichannel spectrum filter device and manufacturing method thereof
JPS6188203A (en) Band-pass light interference film filter

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20200626

RJ01 Rejection of invention patent application after publication