CN205911317U

CN205911317U - Novel photovoltaic cell module

Info

Publication number: CN205911317U
Application number: CN201620881243.5U
Authority: CN
Inventors: 赵飞; 苏雁军; 杨春华
Original assignee: Datong Power Supply Co of State Grid Shanxi Electric Power Co Ltd
Current assignee: Datong Power Supply Co of State Grid Shanxi Electric Power Co Ltd
Priority date: 2016-08-15
Filing date: 2016-08-15
Publication date: 2017-01-25
Anticipated expiration: 2026-08-15

Abstract

The utility model provides a novel photovoltaic cell module, novel photovoltaic cell module includes: first silicon wafer (1), first passivation layer (2), the 1st metal touch layer (3), insulating layer (4), the 2nd metal touch layer (5). First silicon wafer (1) set up in novel photovoltaic cell's lower floor, first passivation layer (2) set up in on first silicon wafer (1), the 1st metal touch layer (3) deposit is in on first passivation layer (2), insulating layer (4) set up in on the first metal layer (3), and fill the 2nd predetermined shape's vacancy position, the 2nd metal touch layer (5) deposit is in on insulating layer (4). The utility model discloses a photovoltaic cell module luminous efficacy is high, and the metal contact is even, smooth, no burr, and consequently, the electric current stationary noise who forms is little.

Description

A kind of novel photovoltaic battery component

Technical field

This utility model is related to field of photovoltaic power generation and in particular to a kind of novel photovoltaic battery component.

Background technology

Increasingly exhausted with non-renewable energy resources, solar energy is increasingly subject to the weight of people as a kind of clean energy resource Depending on.Solar electrical energy generation has two ways, and one kind is light thermoelectricity conversion regime, and another kind is that photoelectric direct connects conversion regime.

The heat energy power-generating that light thermoelectricity conversion regime produces by using solar radiation, usually by solar thermal collector The heat energy being absorbed is converted into the steam of working medium, then driving steam turbine generates electricity.Previous process is photothermal deformation process；Afterwards One process is thermo-electric conversion process, as common thermal power generation.The shortcoming of solar energy thermal-power-generating be efficiency very low and Cost is very high, estimates at least expensive than common thermal power station 5～10 times of its investment.The solar energy power plant of one 1000mw needs 20～2,500,000,000 dollars of investment, the investment of average 1kw is 2000～2500 dollars.Therefore, can only be applied on a small scale special Occasion, and utilize economically very uneconomical on a large scale, can't compete with common thermal power station or nuclear power station phase.

Photovoltaic cell is the device directly luminous energy being changed into electric energy by photoelectric effect or Photochemical effects.With photoelectricity The thin-film type solar cell of effect work is main flow, and with the enforcement solaode of Photochemical effects work then also in sprouting The bud stage.

The essential structure of solar cell is engaged with n-type semiconductor with p-type and forms.The most basic material of quasiconductor is " silicon ", it is nonconducting, but if mixing different impurity in the semiconductors it is possible to make p-type and n-type semiconductor, then There is individual hole (p-type semiconductor has lacked a negatively charged electronics, how can be considered a positive charge) using p-type semiconductor, The potential difference of many with n-type semiconductor free electrons to produce electric current, so when sunlight, luminous energy is by silicon atom In electron excitation out, and produce the convection current in electronics and hole, these electronics and hole all can be affected by built in potential, Attracted by N-shaped and p-type semiconductor respectively, and be gathered in two ends.If now outside coupled together with electrode, form one and return Road, here it is the principle that solar cell generates electricity.

By the way of front contact, this mode takies light-emitting area impact luminous efficiency to most battery at present.

Additionally, the contact of a lot of batteries is to be realized by way of laser ablation at present, in laser ablation process, ablation Burr that some carries similar spine one class are understood in contact out, and what this can affect electronics or hole transports performance.

Utility model content

Therefore, this utility model is desirable to provide the photovoltaic cell that a kind of luminous efficiency is high, hard contact is uniform, smooth.

Specifically, this utility model provides a kind of novel photovoltaic battery component it is characterised in that described novel photovoltaic is electric Pond assembly includes:

First silicon wafer, the first passivation layer, the first metal contact layer, insulating barrier, the second metal contact layer,

Described first silicon wafer is arranged at the orlop of described novel photovoltaic battery component；

Described first passivation layer is arranged on described first silicon wafer；

Described first metal contact layer is deposited on described first passivation layer, described first passivation layer has first and makes a reservation for First ablation pattern of shape, described first metal contact layer has at described first ablation pattern that to be embedded into described first blunt Change the first hard contact in layer, contact with described first silicon wafer, described first metal contact layer leaves second and makes a reservation for The vacancy position of shape；

Described insulating barrier is arranged on described first metal contact layer, and fills the vacancy of described second reservation shape Position；

Described second metal contact layer is deposited on described insulating barrier, wherein, described insulating barrier has and described sky Scarce position coupling, but it is smaller in size than the second ablation pattern at described vacancy position, described second ablation pattern penetrates described insulation Layer, described vacancy position reach described first silicon wafer, and described second metal contact layer has and is embedded in described second ablation figure The second hard contact in case,

Described first metal contact layer and the second metal contact layer are constituted by double-layer structure.

Preferably, the thickness of described first silicon wafer is 30-200 micron.

Preferably, the thickness of described first passivation layer is 20-100 micron.

Preferably, described novel photovoltaic battery component also includes the second passivation layer, and described second passivation layer is located at described the Above one silicon wafer.

Beneficial effect:

Photovoltaic cell component luminous efficiency of the present utility model is high, and hard contact is uniform, smooth, impulse- free robustness, therefore, institute's shape The current stabilization noise becoming is little.

Brief description

Fig. 1 is a kind of structural representation of the novel photovoltaic battery according to embodiment 1 of the present utility model.

Fig. 2 is another kind of structural representation of the novel photovoltaic battery according to embodiment 1 of the present utility model.

Fig. 3 is the structural representation of the novel photovoltaic battery according to embodiment 2 of the present utility model.

Specific embodiment

As shown in figure 1, the semiconductor die that the semiconductor wafer that the photovoltaic cell component of the present embodiment is adopted adulterates for silicon Piece, chip preferably adulterates boron or germanium as dopant.

With continued reference to Fig. 1, it can be seen that novel photovoltaic battery component of the present utility model includes: the first silicon wafer Piece 1, the first passivation layer 2, the first metal contact layer 3, insulating barrier 4, the second metal contact layer 5, the first silicon wafer 1 is arranged at new The superiors of photovoltaic cell component.First silicon wafer 1 can adopt the semi-conducting material such as silicon oxide, silicon nitride.First passivation layer Can be with non-crystalline silicon.The first metal layer and second metal layer can be using zinc, stannum or the alloys of the two.

First passivation layer 2 is arranged on the first silicon wafer 1；First metal contact layer 3 is deposited on the first passivation layer 2, the First ablation pattern of the first reservation shape is had on one passivation layer 2.The pattern of the first reservation shape here can be rule Circular, the oval or square ablation pattern of distribution or pit-hole, for follow-up filling insulating barrier 4 and in insulating barrier 4 It is further disposed upon the hard contact 7 that second metal layer 5 is connected.

The first metal layer 3 has, at the first ablation pattern, the first hard contact being embedded in the first passivation layer 2, with One silicon wafer 1 contacts, and the first metal layer 3 leaves the vacancy position of the second reservation shape.

Insulating barrier 4 is arranged on the first metal layer 3, and fills the vacancy position of the second reservation shape.

Second metal contact layer 5 is deposited on insulating barrier 4, wherein, insulating barrier 4 has and mates with vacancy position, but It is smaller in size than the second ablation pattern at vacancy position, the second ablation pattern penetrates insulating barrier 4, vacancy position reaches the first silicon wafer 1, the second metal contact layer 5 has the second hard contact being embedded in the second ablation pattern.

The first metal layer 3 is made up of double-layer structure, and wherein lower floor is tin layers, and upper strata is zinc or Zinc-tin alloy layer.First silicon The thickness of chip 1 is 30-200 micron.The thickness of the first passivation layer is 20-100 micron.

Novel photovoltaic battery component also includes the second passivation layer, and the second passivation layer is located at the first silicon wafer 1) below.

Used in this utility model, chip can be about 20 micron thickness to about 100 micron thickness.Insulating barrier can adopt Silicon dioxide, silicon oxynitride or silicon nitride.

Contact on the first metal layer and second metal layer is each other by insulator separation, it is to avoid the electronics on the two and sky Cave is to compound.

As shown in Fig. 2 in the present embodiment, the first metal layer 3 and second metal layer 5 are constituted by double-layer structure.First Metal level includes its Part I 9 and Part II 8, and second metal layer includes its Part I 7 and Part II 6.In this reality Apply example to collect, the first hard contact is integrally formed with the first metal layer 3.

Embodiment 2

As shown in figure 3, in the present embodiment, the such as embodiment of Fig. 2 is similar to, the first metal layer 3 and second metal layer 5 are by two Rotating fields are constituted.The first metal layer includes its Part I 9 and Part II 8, and second metal layer includes its Part I 7 and Two parts 6.

Difference is, in the present embodiment, Part II 9 one bodily form of the first hard contact and the first metal layer 3 Become.Second hard contact is integrally formed with the Part II 7 of second metal layer 3.

It should be noted that the shape of all parts in accompanying drawing is all schematic however not excluded that depositing with its true shape In different, accompanying drawing is only used for principle of the present utility model is illustrated, and is not intended to this utility model is limited.

Although being described in detail to principle of the present utility model above in conjunction with preferred embodiment of the present utility model, It should be appreciated by those skilled in the art that above-described embodiment is only the explanation to exemplary implementation of the present utility model, and The non-restriction that this utility model is comprised with scope.Details in embodiment does not constitute the restriction to this utility model scope, In the case of spirit and scope of the present utility model, any equivalent transformation based on technical solutions of the utility model, letter Single replacement etc. is obvious to be changed, and all falls within this utility model protection domain.

Claims

1. a kind of novel photovoltaic battery component is it is characterised in that described novel photovoltaic battery component includes:

First silicon wafer (1), the first passivation layer (2), the first metal contact layer (3), insulating barrier (4), the second metal contact layer (5),

Described first silicon wafer (1) is arranged at the orlop of described novel photovoltaic battery component；

Described first passivation layer (2) is arranged on described first silicon wafer (1)；

Described first metal contact layer (3) is deposited on described first passivation layer (2), and described first passivation layer (2) has First ablation pattern of one reservation shape, described first metal contact layer (3) has at described first ablation pattern and is embedded into The first hard contact (6) in described first passivation layer (2), is contacted with described first silicon wafer (1), described first metal connects The vacancy position of the second reservation shape is left on contact layer (3)；

Described insulating barrier (4) is arranged on described first metal contact layer (3), and fills the sky of described second reservation shape Scarce position；

Described second metal contact layer (5) is deposited on described insulating barrier (4), wherein, described insulating barrier (4) has and institute State vacancy position coupling but be smaller in size than the second ablation pattern at described vacancy position, described second ablation pattern penetrates described Insulating barrier (4), described vacancy position reach described first silicon wafer (1), and described second metal contact layer (5) has and is embedded in institute State the second hard contact (7) in the second ablation pattern,

Described first metal contact layer (3) and the second metal contact layer (5) are constituted by double-layer structure.

2. novel photovoltaic battery component according to claim 1 is it is characterised in that the thickness of described first silicon wafer (1) For 30-200 micron.

3. novel photovoltaic battery component according to claim 1 is it is characterised in that the thickness of described first passivation layer is 20-100 micron.

4. novel photovoltaic battery component according to claim 1 is it is characterised in that described novel photovoltaic battery component also wraps Include the second passivation layer, described second passivation layer is located above described first silicon wafer (1).