CN205898321U - Temperature sensor front end circuit - Google Patents
Temperature sensor front end circuit Download PDFInfo
- Publication number
- CN205898321U CN205898321U CN201620732201.5U CN201620732201U CN205898321U CN 205898321 U CN205898321 U CN 205898321U CN 201620732201 U CN201620732201 U CN 201620732201U CN 205898321 U CN205898321 U CN 205898321U
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- mos pipe
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Abstract
The utility model relates to a circuit field, in particular to temperature sensor front end circuit. The utility model discloses a temperature sensor front end circuit, include with projecting pole area difference, but have same collecting electrode bias current's dual -stage amplifier, linearizer and the base current bucking circuit of triode to doing the input, the dual -stage amplifier produce with the electric current I / pt (T) of temperature positive correlation and with the electric current I / ct (T) of temperature negative correlation, the non inverting input end that the linearizer connect at the dual -stage amplifier to the temperature coefficient big through triode base current advances the line non -linearity compensation to electric current I / ct (T), the base current bucking circuit produces a base and offsets electric current ib (T), the base current size that contains is offset to the base among electric current ib (T) and electric current I / pt (T) and the electric current I / ct (T) the same. The utility model discloses the temperature signal's of output the linearity is high, and circuit structure is simple, and the low power dissipation is easily realized, and is with low costs.
Description
Technical field
The utility model belongs to circuit field and in particular to a kind of temperature sensor front end being integrated in passive electronic label
Circuit.
Background technology
Rfid or nfc label is combined with temperature sensor circuit, can effectively sensing node temperature information simultaneously
Managed and applied, thus effectively widening and perfect rfid or nfc label is in modern logistics monitoring, medicine, food trough
The application in the fields such as storage.Also the temperature sensor circuit being integrated in rfid or nfc label is designed to current simultaneously
Study hotspot.
It is integrated in the temperature sensor on passive rfid or nfc label, for the consideration of reduces cost, temperature sensor
Design needs to take less chip area, and can reach the required certainty of measurement of application by minimum calibration number of times.This
Outward, receive radio wave because the energy of passive rfid or nfc label derives from antenna, the energy that antenna can be collected is very
Limited, so temperature sensor also should meet the requirement of low-power consumption, thus not significantly reducing the sensitivity of label.Traditional temperature
Degree sensor front end circuit is built using common triode or metal oxide semiconductor field effect tube, such as Fig. 1 a and Fig. 1 b
Shown, it produces the electric current ipt related to temperature and ict(and is converted into ict via voltage vct, and in figure omits this change-over circuit),
However, non-linear due to triode itself, the electric current of generation has larger nonlinearity erron, and this error needs through follow-up
The additional compensation of circuit, increases design complexities and uncertainty.For this reason, most of precisely temperature sensor front-end circuit is adopted
, the such as publication non-linear to reduce signal with single bias current generating circuit and temperature signal generation circuit:
Cn204142381u, but the angle analysis from power consumption, this method increase the power consumption of whole temperature sensor, thus reducing mark
The sensitivity signed.
Content of the invention
The purpose of this utility model is to provide for solving the above problems a kind of linearity of temperature signal of output high,
Circuit structure is simple, low in energy consumption, it is easy to accomplish, low cost temperature sensor front-end circuit.
For this reason, the utility model discloses a kind of front-end circuit of temperature sensor, including different with emitter area, but
The triode having same collector bias current offsets electricity to doing the dual-stage amplifier inputting, linearizer and base current
Road, described dual-stage amplifier produces and temperature positively related electric current ipt(t) and the electric current i negatively correlated with temperaturect(t), described
Linearizer is connected on the in-phase input end of dual-stage amplifier, and by the big temperature coefficient of transistor base electric current to electric current i
´ctT () carries out nonlinear compensation, described base current bucking circuit produces a base stage cancellation current ibT (), described base stage is offset
Electric current ib(t) and electric current ipt(t) and electric current ictT the base current size containing in () is identical.
Further, also include start-up circuit, described start-up circuit prevents circuit to be operated in zero offset point.
Further, described electric current ipt(t), electric current ict(t) and base stage cancellation current ibT () passes through the first electric current respectively
Mirror, the second current mirror and the output of the 3rd current mirror.
Further, described dual-stage amplifier circuit includes Npn triode q2, q3 and p-type mos pipe mp3 to mp8, described
Linearizer includes Npn triode q1, q0 and resistance rss, and described Npn triode q2 is different with the emitter area of q3, described p
Type mos pipe mp3 is connected with mp4, and described p-type mos pipe mp5 is connected with mp6, and described p-type mos pipe mp7 is connected with mp8, described p-type
The source electrode of mos pipe mp3, mp5 and mp7 meets power supply vdd, the grid of described p-type mos pipe mp3 and mp4 connects the leakage of p-type mos pipe mp6
Pole, the grid of described p-type mos pipe mp5, mp6, mp7 and mp8 connects the drain electrode of p-type mos pipe mp8, the leakage of described p-type mos pipe mp8
Pole is sequentially connected in series Npn triode q3 and resistance rss ground connection, and the base stage of described Npn triode q3 connects the drain electrode of p-type mos pipe mp4,
The drain electrode of described p-type mos pipe mp6 is sequentially connected in series Npn triode q2 and resistance rss ground connection, the drain electrode string of described p-type mos pipe mp4
Connection resistance rpt connects the base stage of Npn triode q2 and the base stage of Npn triode q1 and colelctor electrode, the transmitting of described Npn triode q1
Pole connects the base stage of Npn triode q0, and the colelctor electrode of described Npn triode q0 meets power supply vdd, the emitter stage of described Npn triode q0
Ground connection, the drain current of described p-type mos pipe mp4 is electric current iptT (), the drain current of described p-type mos pipe mp6 is electric current i
´ct(t).
Further, described base current bucking circuit includes p-type mos pipe mp9 to mp12, amplifier a1, npn tri- pole
Pipe q4 and resistance 2rss, described 3rd current mirror includes p-type mos pipe mp13 and mp14, the in-phase input end of described amplifier a1
Connect the colelctor electrode of Npn triode q3, the anti-phase input of described amplifier a1 terminates the colelctor electrode of Npn triode q4, described npn tri-
The emitter stage series resistance 2rss ground connection of pole pipe q4, the resistance of described resistance 2rss is the twice of resistance rss, described p-type mos pipe
Mp9 is connected with mp10, and described p-type mos pipe mp11 is connected with mp12, and described p-type mos pipe mp13 is connected with mp14, described p-type
The source electrode of mos pipe mp9, mp11 and mp13 meets power supply vdd, the drain electrode of described p-type mos pipe mp10 connects the current collection of Npn triode q4
Pole, the drain electrode of described p-type mos pipe mp12 connects the base stage of Npn triode q4, and the grid of described p-type mos pipe mp9 and mp10 connects p-type
The grid of mos pipe mp7, the grid of described p-type mos pipe mp11 to mp14 connect amplifier a1 output end, described p-type mos pipe
The drain electrode of mp14 is output end, exports base stage cancellation current ib(t).
Advantageous Effects of the present utility model:
The linearity of output temperature signal of the present utility model is passed through with the transistor collector electric current containing high-temperature coefficient
It is improved, circuit structure is simple, low in energy consumption, it is easy to accomplish, low cost.
Brief description
Fig. 1 a and Fig. 1 b is traditional temperature sensor front-end circuit schematic diagram；
Fig. 2 is the temperature sensor front-end circuit schematic diagram of the utility model embodiment；
Fig. 3 is the v before and after the improvement of the utility model embodimentbeNon-linear schematic diagram.
Specific embodiment
In conjunction with the drawings and specific embodiments, the utility model is further illustrated.
A kind of temperature sensor front-end circuit, including different with emitter area, but has same collector bias current
Triode is to doing the dual-stage amplifier inputting, start-up circuit, linearizer and base current bucking circuit, described start-up circuit
Control the work of whole front-end circuit, described dual-stage amplifier produces and temperature positively related electric current ipt(t) and with temperature negative
The electric current i closingctT (), described linearizer connects the in-phase input end of dual-stage amplifier circuit, by transistor base electric current
Big temperature coefficient is to electric current ictT () carries out nonlinear compensation, described base current bucking circuit produces a base stage cancellation current
ib(t), described base stage cancellation current ib(t) and electric current ipt(t) and electric current ictT the base current size containing in () is identical,
Described electric current ipt(t), electric current ict(t) and base stage cancellation current ibT () passes through the first current mirror, the second current mirror and the respectively
Three current mirror outputs.
Specifically, as shown in Fig. 2 dual-stage amplifier circuit includes Npn triode q2, q3 and p-type mos pipe mp3 to mp8,
Described linearizer includes Npn triode q1, q0 and resistance rss, and described base current bucking circuit includes p-type mos pipe mp9
To mp12, amplifier a1, Npn triode q4 and resistance 2rss, described first current mirror includes p-type mos pipe mp1 and mp2, described
Second current mirror includes p-type mos pipe mp15 and mp16, and described 3rd current mirror includes p-type mos pipe mp13 and mp14, described opens
Dynamic circuit includes p-type mos pipe m0, mp17 and mp18.Npn triode q2 is different with the emitter area of q3, as shown in Fig. 2 this reality
Apply in example, the emitter area of Npn triode q2 is p, and the emitter area of Npn triode q2 is 1, and wherein p is not equal to 1, p-type mos
Pipe mp3 is connected with mp4, and p-type mos pipe mp5 is connected with mp6, and p-type mos pipe mp7 is connected with mp8, p-type mos pipe mp3, mp5 and mp7
Source electrode meet power supply vdd, the grid of p-type mos pipe mp3 and mp4 connects the drain electrode of p-type mos pipe mp6, be sequentially connected in series simultaneously electric capacity cc and
Resistance rz connects the drain electrode of p-type mos pipe mp4, electric capacity cc as loop compensation, resistance rz as zero compensation, p-type mos pipe mp5,
The grid of mp6, mp7 and mp8 connects the drain electrode of p-type mos pipe mp8, the drain electrode of p-type mos pipe mp8 be sequentially connected in series Npn triode q3 and
Resistance rss is grounded, and the base stage of Npn triode q3 connects the drain electrode of p-type mos pipe mp4 and m0, and the drain electrode of p-type mos pipe mp6 is gone here and there successively
Connection Npn triode q2 and resistance rss ground connection, drain series resistance rpt of p-type mos pipe mp4 and rb connect the base of Npn triode q2
Pole, drain series resistance rpt of p-type mos pipe mp4 connects base stage and the colelctor electrode of Npn triode q1, the transmitting of Npn triode q1
Pole connects the base stage of Npn triode q0, and the colelctor electrode of Npn triode q0 meets p-type mos pipe m0Drain electrode, type mos pipe m0Source electrode connect
Power supply vdd, the grounded emitter of Npn triode q0.
The homophase input of amplifier a1 terminates the colelctor electrode of Npn triode q3, the anti-phase input termination npn tri- of amplifier a1
The colelctor electrode of pole pipe q4, the emitter stage series resistance 2rss ground connection of Npn triode q4, the resistance of resistance 2rss is resistance rss's
Twice, p-type mos pipe mp9 is connected with mp10, and p-type mos pipe mp11 is connected with mp12, and p-type mos pipe mp13 is connected with mp14, p-type
The source electrode of mos pipe mp9, mp11 and mp13 meets power supply vdd, the drain electrode of p-type mos pipe mp10 connects the colelctor electrode of Npn triode q4, p-type
The drain electrode of mos pipe mp12 connects the base stage of Npn triode q4, and the grid of p-type mos pipe mp9 and mp10 connects the grid of p-type mos pipe mp7
Pole, the grid of p-type mos pipe mp11 to mp14 connect amplifier a1 output end, the drain electrode of p-type mos pipe mp14 is output end, defeated
Go out base stage cancellation current ibT (), p-type mos pipe mp1 is connected with mp2, and the source electrode of p-type mos pipe mp1 meets power supply vdd, p-type mos pipe
The grid of mp1 and mp2 connects the grid of p-type mos pipe mp3, and the drain electrode of p-type mos pipe mp2 is output end, output current ipt(t), p
Type mos pipe mp15 is connected with mp16, and the source electrode of p-type mos pipe mp15 meets power supply vdd, the grid of p-type mos pipe mp15 and mp16 meets p
The grid of type mos pipe mp5, the drain electrode of p-type mos pipe mp16 is output end, output current ict(t), p-type mos pipe mp17 and mp18
Series connection, the source electrode of p-type mos pipe mp17 meets power supply vdd, the grid of p-type mos pipe mp17 and mp18 connects the grid of p-type mos pipe mp15,
The drain electrode of p-type mos pipe mp18 connects the drain and gate of N-shaped mos pipe mn1, and the source electrode of N-shaped mos pipe mn1 connects N-shaped mos pipe mn2's
Drain and gate, the source ground of N-shaped mos pipe mn2, the grid of N-shaped mos pipe mn1 is connected with the grid of p-type mos pipe m0.
During work, due to the amplification of Npn triode q2, q3 and p-type mos pipe mp3 to mp8 and the negative-feedback of resistance rpt
Effect, for vt*lnp(wherein, vt is thermal voltage to the voltage on resistance rpt, and p is the emitter area ratio of Npn triode q2, q3),
For one with temperature positive correlation (ptat) voltage signal, and by resistance rpt produce a ptat electric current ipt(t).This electric current leads to
Cross p-type mos pipe mp1 and the output of mp2 mirror image.Meanwhile, electric current iptT ()-electric current ib2(electric current ib2 is the base stage of Npn triode q2
Electric current) flow through the base stage of Npn triode q1 and q0, produce one with temperature negative correlation (ctat) signal, with resistance rb and npn tri-
Pole pipe q2 determines resistance rss both end voltage together, and produces a ctat electric current i by resistance rssctT (), finally by p-type
Mos pipe mp15 and the output of mp16 mirror image.Due to the base stage containing Npn triode q3 in i pt (t) and i ct (t) of mirror image output
Current component, base current bucking circuit produces and Npn triode q3 base current identical electric current ib(t), and pass through p-type
Mos pipe mp13 and mp14 mirror image export to i pt(t) with i ct(t) compensate.If the temperature coefficient of resistance is ignored (such as
Output adoption rate formula output, the temperature effect of resistance do not affect circuit performance), ptat electric current i pt(t) the linearity high, no
Nonlinear adjustment need to be done.However, for ctat electric current i ct (t), due to the base-emitter voltage v of Npn triode q2beBasis
Levy non-linear vbe=vg0-vt[(η-a) lnt-lneg] (vg0It is the silicon band gap in 0k, η=4-n, n are the temperature of electron mobility
Coefficient, a is the temperature coefficient of transistor collector bias current, and eg is the constant related to technique), it is at -55 DEG C to 125 DEG C
In temperature range, include the non-linear component of 3-4mv, about 2 DEG C non-can be caused not doing in the case that additional circuit compensates
Linear temperature error, affects final temperature sensor performance.The utility model avoids traditional complex nonlinear compensation circuit,
And merely with the big temperature coefficient of Npn triode q2 base current to improve voltage vbeThe linearity, as shown in Fig. 2 npn tri- pole
The base current of pipe q2 is ptat, and its collector current is beta*i pt(t) (beta is triode current amplification factor), by
Containing larger temperature coefficient xtb(xtb in beta is technological parameter), the collector current temperature coefficient of Npn triode q2 is 1+
Xtb, it effectively reduces the voltage v of Npn triode q2beNonlinearity, as shown in figure 3, in figure curve 1 represents traditional temperature
The signal that sensor front end produces, curve 2 is the signal of the temperature sensor front end generation of the utility model embodiment, and it is linear
Degree is compared with 1 raising: xtb/ (η -1), wherein xtb and η are cmos technological parameter.In deep submicron process, xtb becomes big, its optimization
Effect is more preferable.
Certainly, in the present embodiment, Npn triode q1, q0, the quantity of q2 and q3 are 1, in other embodiments,
Can be multiple, can be real easily using those skilled in the art when multiple Npn triode q1, q0, the circuit structure of q2 and q3
Existing, this no longer describes in detail.
This gives the one of which of dual-stage amplifier is preferable to carry out circuit, certainly, in other embodiments, two
Level amplifier such as can also be loaded using resistance, pmos cascade loads, or single pmos using other implementing circuits
As load etc..
Although specifically show and describe the utility model in conjunction with preferred embodiment, those skilled in the art should
This is understood, in the spirit and scope of the present utility model being limited without departing from appended claims, in form and details
On the utility model can be made a variety of changes, be protection domain of the present utility model.
Claims (5)
1. a kind of temperature sensor front-end circuit it is characterised in that: include different with emitter area, but have same colelctor electrode inclined
The triode putting electric current amplifies to doing the dual-stage amplifier inputting, linearizer and base current bucking circuit, described two-stage
Device produces and temperature positively related electric current i 'pt(t) and the electric current i ' negatively correlated with temperaturectT (), described linearizer is connected on
The in-phase input end of dual-stage amplifier, and by the big temperature coefficient of transistor base electric current to electric current i 'ctT () carries out non-linear
Compensate, described base current bucking circuit produces a base stage cancellation current ib(t), described base stage cancellation current ib(t) and electric current
i′pt(t) and electric current i 'ctT the base current size containing in () is identical.
2. temperature sensor front-end circuit according to claim 1 it is characterised in that: also include start-up circuit, described open
Dynamic circuit prevents circuit front-end to be operated in zero offset point.
3. temperature sensor front-end circuit according to claim 1 it is characterised in that: described electric current i 'pt(t), electric current i 'ct
(t) and base stage cancellation current ibT () passes through the first current mirror, the second current mirror and the output of the 3rd current mirror respectively.
4. temperature sensor front-end circuit according to claim 1 it is characterised in that: described dual-stage amplifier includes npn
Triode q2, q3 and p-type mos pipe mp3 to mp8, described linearizer includes Npn triode q1, q0 and resistance rss, described
Npn triode q2 is different with the emitter area of q3, and described p-type mos pipe mp3 is connected with mp4, and described p-type mos pipe mp5 and mp6 goes here and there
Connection, described p-type mos pipe mp7 is connected with mp8, and the source electrode of described p-type mos pipe mp3, mp5 and mp7 meets power supply vdd, described p-type mos
The grid of pipe mp3 and mp4 connects the drain electrode of p-type mos pipe mp6, and the grid of described p-type mos pipe mp5, mp6, mp7 and mp8 connects p-type
The drain electrode of mos pipe mp8, the drain electrode of described p-type mos pipe mp8 is sequentially connected in series Npn triode q3 and resistance rss ground connection, described npn
The base stage of triode q3 connects the drain electrode of p-type mos pipe mp4, the drain electrode of described p-type mos pipe mp6 be sequentially connected in series Npn triode q2 and
Resistance rss is grounded, and drain series resistance rpt of described p-type mos pipe mp4 connects base stage and Npn triode q1 of Npn triode q2
Base stage and colelctor electrode, the emitter stage of described Npn triode q1 connects the base stage of Npn triode q0, the collection of described Npn triode q0
Electrode meets power supply vdd, the grounded emitter of described Npn triode q0, the drain current of described p-type mos pipe mp4 is electric current i 'pt
T (), the drain current of described p-type mos pipe mp6 is electric current i 'ct(t).
5. temperature sensor front-end circuit according to claim 4 it is characterised in that: described electric current i 'pt(t), electric current i 'ct
(t) and base stage cancellation current ibT () passes through the first current mirror, the second current mirror and the output of the 3rd current mirror, described base stage respectively
Current cancellation circuit includes p-type mos pipe mp9 to mp12, amplifier a1, Npn triode q4 and resistance 2rss, described 3rd electric current
Mirror includes p-type mos pipe mp13 and mp14, and the homophase input of described amplifier a1 terminates the colelctor electrode of Npn triode q3, described puts
The anti-phase input of big device a1 terminates the colelctor electrode of Npn triode q4, and emitter stage series resistance 2rss of described Npn triode q4 connects
Ground, the resistance of described resistance 2rss is the twice of resistance rss, and described p-type mos pipe mp9 is connected with mp10, described p-type mos pipe
Mp11 is connected with mp12, and described p-type mos pipe mp13 is connected with mp14, and the source electrode of described p-type mos pipe mp9, mp11 and mp13 connects
Power supply vdd, the drain electrode of described p-type mos pipe mp10 connects the colelctor electrode of Npn triode q4, and the drain electrode of described p-type mos pipe mp12 connects
The base stage of Npn triode q4, the grid of described p-type mos pipe mp9 and mp10 connects the grid of p-type mos pipe mp7, described p-type mos pipe
The grid of mp11 to mp14 connect amplifier a1 output end, the drain electrode of described p-type mos pipe mp14 is output end, exports base stage
Cancellation current ib(t).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620732201.5U CN205898321U (en) | 2016-07-07 | 2016-07-07 | Temperature sensor front end circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620732201.5U CN205898321U (en) | 2016-07-07 | 2016-07-07 | Temperature sensor front end circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205898321U true CN205898321U (en) | 2017-01-18 |
Family
ID=57771360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620732201.5U Withdrawn - After Issue CN205898321U (en) | 2016-07-07 | 2016-07-07 | Temperature sensor front end circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN205898321U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105928632A (en) * | 2016-07-07 | 2016-09-07 | 杭州澜达微电子科技有限公司 | Temperature sensor front-end circuit |
| CN109269657A (en) * | 2018-10-21 | 2019-01-25 | 天津大学 | A kind of high sensitivity temperature detection integrated circuit |
| CN113448376A (en) * | 2017-06-07 | 2021-09-28 | 苏州瀚宸科技有限公司 | Base current mirror circuit, RSSI circuit and chip of bipolar transistor |
-
2016
- 2016-07-07 CN CN201620732201.5U patent/CN205898321U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105928632A (en) * | 2016-07-07 | 2016-09-07 | 杭州澜达微电子科技有限公司 | Temperature sensor front-end circuit |
| CN105928632B (en) * | 2016-07-07 | 2019-02-22 | 杭州澜达微电子科技有限公司 | A kind of temperature sensor front-end circuit |
| CN113448376A (en) * | 2017-06-07 | 2021-09-28 | 苏州瀚宸科技有限公司 | Base current mirror circuit, RSSI circuit and chip of bipolar transistor |
| CN109269657A (en) * | 2018-10-21 | 2019-01-25 | 天津大学 | A kind of high sensitivity temperature detection integrated circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170118 Effective date of abandoning: 20190222 |