CN205845948U - A kind of based on the chip-stacked and gas sensor of flip chip bonding and encapsulating structure thereof - Google Patents
A kind of based on the chip-stacked and gas sensor of flip chip bonding and encapsulating structure thereof Download PDFInfo
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- CN205845948U CN205845948U CN201620814991.1U CN201620814991U CN205845948U CN 205845948 U CN205845948 U CN 205845948U CN 201620814991 U CN201620814991 U CN 201620814991U CN 205845948 U CN205845948 U CN 205845948U
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- chip
- gas sensor
- stacked
- package substrate
- bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model discloses a kind of based on the chip-stacked and gas sensor of flip chip bonding and encapsulating structure thereof, including package substrate, IC chip, gas sensor chip, wire, multiple pad and pin；Described IC chip is welded on the front of described package substrate by flip chip bonding, described pin is arranged at the back side of package substrate, described gas sensor chip bonds on an integrated circuit die, described pad is separately positioned in IC chip, gas sensor chip and package substrate, described pin is connected with the pad in package substrate, and the pad in described package substrate, IC chip and gas sensor chip realizes electrical connection by wire bonding respectively.Use chip-stacked and face-down bonding technique, it is achieved that to the gas sensor chip of large-size and the stacked package of the IC chip of reduced size, it is ensured that gas sensor chip and the good contact of environmental gas, improve the combination property of sensor.
Description
Technical field
This utility model relates to a kind of gas detection technology based on MEMS technology, in particular a kind of based on chip
Stack the gas sensor with flip chip bonding and encapsulating structure thereof.
Background technology
Gas sensor is that composition specific in gas is detected by one by certain principle, and detecting
Certain signal be converted into the device of suitable electrical signal.Along with mankind's day to problems such as environmental protection, pollution and public safeties
Benefit is paid attention to, and people are for the improving constantly of requirement of living standard, and gas sensor is in industrial, civilian and environmental monitoring three
Achieve in big major domain and be widely applied.
The difference of the principle according to gas sensor detected gas, gas sensor mainly includes catalytic combustion type, electrification
Formula, heat-conducted, infrared absorption type and semiconductor-type gas sensor etc..Wherein, semiconductor-type gas sensor has sensitive
Spend the advantages such as high, easy to operate, volume is little, with low cost, response time is short and recovery time is short so that semiconductor-type gas passes
Sensor is widely applied, such as to flammable explosive gas (such as CH4, H2 etc.) and toxic and harmful (such as CO, NOx etc.)
Detection in play an important role.
Gas sensor, in the development course of over half a century in past, is widely used in petrochemical industry, colliery, medical treatment, aviation
The fields such as space flight, commercial production and life staying idle at home.Along with the development of technology of Internet of things, the application demand of gas sensor is the most continuous
Increase, particularly there is small size, low-power consumption, highly sensitive and fast-response gas sensor have urgent application demand.So
And traditional gas sensor manufacture and encapsulation technology, such as based on earthenware heating and the semiconductor-type gas of case package technology
Body sensor, has been difficult to meet the application demand of Internet of Things at aspects such as size, power consumption and sensitivity.It is now based on MEMS skill
The gas sensor of art, is expected to solve this problem, such as, Chinese utility model patent, and 201520757454.3 1 kinds have
Two resistance-type gas sensors supporting overarm six Rotating fields, it was recently reported that a kind of low-power consumption highly sensitive semiconductor-type gas sensing
Device.How MEMS gas sensor chip and corresponding supporting IC chip are packaged, are those skilled in the art
The problem paid close attention to.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, it is provided that a kind of based on chip-stacked and flip chip bonding
Gas sensor and encapsulating structure, it is achieved the gas sensor chip of large-size and the IC chip of reduced size
Stacked package.
This utility model is achieved through the following technical solutions, and this utility model includes package substrate, ic core
Sheet, gas sensor chip, wire, multiple pad and pin；Described IC chip is welded on described envelope by flip chip bonding
Front at the bottom of fitted lining, described pin is arranged at the back side of package substrate, and described gas sensor chip is bonded in ic core
On sheet, described pad is separately positioned in IC chip, gas sensor chip and package substrate, described pin and encapsulation
Pad on substrate is connected, and the pad in described package substrate, IC chip and gas sensor chip passes through respectively
Wire bonding realizes electrical connection.
As one of optimal way of the present utility model, described wire is spun gold.
As one of optimal way of the present utility model, described IC chip is used for providing interface power, controlling letter
Number and the signal of acquisition process gas sensor chip, described gas sensor chip gather gas signal.
As one of optimal way of the present utility model, described IC chip deposits soldered ball, described integrated circuit
Flip chip bonding is carried out by soldered ball between chip and package substrate.
As one of optimal way of the present utility model, described package substrate is ceramic substrate or PCB substrate.
As one of optimal way of the present utility model, it is right that described pin is at least four.
As one of optimal way of the present utility model, described pin is provided with Gold plated Layer.
As one of optimal way of the present utility model, described gas sensor chip is bonded in integrated by insulative glue
On circuit chip.
As one of optimal way of the present utility model, described IC chip is that IC processes forms, described gas
Body sensor chip is that MEMS technology is made.
The encapsulating structure of a kind of described gas sensor based on multi-chip, described encapsulating structure includes with exploration hole
Sealing cap, described sealing cap is encapsulated on described gas sensor.
First IC chip is welded on the package substrate by face-down bonding technique, then gas sensor chip
Bonding on an integrated circuit die, then by the way of spun gold welds, utilizes spun gold gas sensor chip and package substrate
On pad be chained up, it is achieved electrical connection.Finally, by the sealing cap of metal, pottery or plastic material plus band exploration hole,
After completing encapsulation.
This utility model has the advantage that this utility model uses advanced MEMS technology to make gas compared to existing technology
Body sensor chip, uses IC technique to make the IC chip of supporting gas sensor, compared with conventional art, the most greatly
The power consumption of amplitude reduction sensor and size, and improve the performances such as the sensitivity of gas sensor, Internet of Things can be met
The demand of the application such as net and wearable device.Being stacked up of gas sensor chip and IC chip, enter one
Step reduces the size of whole sensor.Use chip-stacked and face-down bonding technique, it is achieved that the gas sensing to large-size
The stacked package of the IC chip of device chip and reduced size, the size both having reduced sensor in turn ensure that gas sensing
Device chip and the good contact of environmental gas, improve the combination property of sensor.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model；
Fig. 2 is axonometric chart of the present utility model；
Fig. 3 is the upward view of package substrate.
Detailed description of the invention
Elaborating embodiment of the present utility model below, the present embodiment is being front with technical solutions of the utility model
Put and implement, give detailed embodiment and concrete operating process, but protection domain of the present utility model does not limits
In following embodiment.
As shown in Figures 1 to 3, the present embodiment includes package substrate 1, IC chip 2, gas sensor chip 3, spun gold
4, multiple pads 5 and pin 7；Soldered ball 6, described IC chip 2 and package substrate 1 is deposited on described IC chip 2
Between carry out flip chip bonding by soldered ball 6, described pin 7 is arranged at the back side of package substrate 1, and described gas sensor chip 3 is glued
Knot is on IC chip 2, and described pad 5 is separately positioned on IC chip 2, gas sensor chip 3 and encapsulation lining
, described pin 7 is connected with the pad 5 in package substrate 1 at the end 1, and described package substrate 1, IC chip 2 and gas pass
Pad 5 on sensor chip 3 realizes electrical connection by spun gold 4 bonding respectively.
The gas sensor chip 3 of the present embodiment completes based on MEMS technology manufacture, and gas sensor chip 3 is a size of
1.5mm × 1.0mm, the gaseous species of detection is volatile organic matter.IC chip 2 processes based on 0.18 micron process
Become, IC chip 2 a size of 1.2mm × 0.8mm, provide working power and control signal for gas sensor chip 3, adopt
Collect and process the signal of gas sensor perception.Package substrate 1 uses aluminium oxide ceramics, a size of 3.5 × 2.8mm.Envelope
Having four pairs of pins 7 below 1 at the bottom of fitted lining, the size of pin 7 is 0.5mm × 1.0mm, and pin 7 surface is provided with Gold plated Layer 0.5 micron.
Assembling process: first IC chip 2 is welded in package substrate 1 by the way of flip chip bonding, then
Gas sensor chip 3 is stacked on IC chip 2 by the way of insulative glue bonds, then by the mode of gold ball bonding
By spun gold, pad 5 is chained up, is finally packaged with the metal sealing cap of band exploration hole.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all at this
Any amendment, equivalent and the improvement etc. made within the spirit of utility model and principle, should be included in this utility model
Protection domain within.
Claims (10)
1. one kind based on chip-stacked and flip chip bonding gas sensor, it is characterised in that include package substrate, ic core
Sheet, gas sensor chip, wire, multiple pad and pin；Described IC chip is welded on described envelope by flip chip bonding
Front at the bottom of fitted lining, described pin is arranged at the back side of package substrate, and described gas sensor chip is bonded in ic core
On sheet, described pad is separately positioned in IC chip, gas sensor chip and package substrate, described pin and encapsulation
Pad on substrate is connected, and the pad in described package substrate, IC chip and gas sensor chip passes through respectively
Wire bonding realizes electrical connection.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
Wire is spun gold.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
IC chip is for providing interface power, control signal the signal of acquisition process gas sensor chip, described gas
Sensor chip gathers gas signal.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
Deposit soldered ball on IC chip, between described IC chip and package substrate, carry out flip chip bonding by soldered ball.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
Package substrate is ceramic substrate or PCB substrate.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
It is right that pin is at least four.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
Pin is provided with Gold plated Layer.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
Gas sensor chip is bondd on an integrated circuit die by insulative glue.
The most according to claim 1 a kind of based on chip-stacked and flip chip bonding gas sensor, it is characterised in that described
IC chip is that IC processes forms, and described gas sensor chip is that MEMS technology is made.
10. an encapsulating structure for the gas sensor based on multi-chip as described in any one of claim 1～9, its feature
Being, described encapsulating structure includes that the sealing cap with exploration hole, described sealing cap are encapsulated on described gas sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620814991.1U CN205845948U (en) | 2016-07-29 | 2016-07-29 | A kind of based on the chip-stacked and gas sensor of flip chip bonding and encapsulating structure thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620814991.1U CN205845948U (en) | 2016-07-29 | 2016-07-29 | A kind of based on the chip-stacked and gas sensor of flip chip bonding and encapsulating structure thereof |
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| CN205845948U true CN205845948U (en) | 2016-12-28 |
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| CN201620814991.1U Active CN205845948U (en) | 2016-07-29 | 2016-07-29 | A kind of based on the chip-stacked and gas sensor of flip chip bonding and encapsulating structure thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109883469A (en) * | 2019-01-22 | 2019-06-14 | 北京天创金农科技有限公司 | Miniature multi-parameter sensor production method and miniature multi-parameter sensor |
-
2016
- 2016-07-29 CN CN201620814991.1U patent/CN205845948U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109883469A (en) * | 2019-01-22 | 2019-06-14 | 北京天创金农科技有限公司 | Miniature multi-parameter sensor production method and miniature multi-parameter sensor |
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