CN205752256U - A kind of flexible organic field effect tube of three dimensional structure - Google Patents
A kind of flexible organic field effect tube of three dimensional structure Download PDFInfo
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- CN205752256U CN205752256U CN201620045172.5U CN201620045172U CN205752256U CN 205752256 U CN205752256 U CN 205752256U CN 201620045172 U CN201620045172 U CN 201620045172U CN 205752256 U CN205752256 U CN 205752256U
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Abstract
The flexible organic field effect tube of a kind of three dimensional structure that this utility model provides, including the first source electrode (101), the second source electrode (102), the first drain electrode (201), the second drain electrode (202), electrode extended layer (203), the first organic semiconductor layer (301), the second organic semiconductor layer (302), the first insulating barrier (401), the second insulating barrier (402), gate electrode (5), flexible substrate (6).Owing to the field effect of planar structure is restricted in reduction channel length, we use organic field effect tube prepared by vertical-channel, the long effect transistor channel length of this structure is determined by organic semiconductor layer thickness, and organic semiconductor layer is to use the technology evaporated to be prepared from, the uniformity of film that this mode is formed is good, thickness minimum can reach several nanometer, and due to being greatly lowered of channel length, source-drain current can significantly be improved.
Description
[technical field]
This utility model belongs to organic semiconductor device field, particularly relates to the flexible organic field effect tube of a kind of three dimensional structure.
[background technology]
Along with going deep into tradition OFETs research, the research in aspect application such as functionalization, integrated, solution has had
The biggest development, and become a forward position focus of current organic electronics/molectronics research, compared with inorganic material, have
Machine material has a lot of inherent advantages in low price, large area, flexible circuit. and such as, its film-forming process is simple, material category
Many, compatible with flexible substrate, size is the lightest, with low cost, it is easy to carry out large area by spin coating and dipping technology and prepare various
Flexible device and circuit etc. additionally, for organic semiconducting materials, it is right that people can be easily carried out by change molecular structure
The regulation and control of device performance, such that it is able to require to design organic semiconducting materials according to the application of device. and low cost, large area are soft
The large-scale industrialized production in the fields such as property shows, flexible sensor, its prospect is boundless.Main application has: Flexible Displays
Driving, electronic newspaper, human body sensor, active matrix circuit, low cost print flexible radio frequency label entirely, commercialization flexibility is penetrated
Frequency marking label etc..
Traditional organic field effect tube mainly include top-gated and two kinds of structures of bottom gate, wherein top-gated include again end contact-type and
Two kinds of top contact type, bottom gate includes again end contact-type and two kinds of top contact type, due to the characteristic of OTFT organic material itself, organic field
Effect transistor typically uses bottom grating structure.So-called top contact be exactly source-drain electrode at top, grid in bottom, and end contact is source
Drain electrode in bottom, grid is at top.Being mainly characterized by of top contact type OTFT, source-drain electrode away from substrate, organic semiconductor layer and
Insulating barrier is joined directly together, and can take insulating barrier is modified one-tenth membrane structure and the pattern changing quasiconductor during making, from
And improve the carrier mobility of device, in this structure, semiconductor layer is more than source and drain in bottom by the area that gate electric field is affected simultaneously
Device architecture, therefore there is higher carrier mobility；End contact-type OTFT is mainly characterized by organic semiconductor layer evaporation
On source-drain electrode, and the device architecture that source-drain electrode is the end of at can disposably prepare grid and source-drain electrode by photoetching method,
Can realize simplifying in technique preparation, and for organic sensor, need semiconductor layer without covering to be exposed to test environment
In, now the source-drain electrode device architecture end of at just has bigger advantage.
But, the organic field effect tube of existing planar structure can cause the limitation of performance due to many reasons, such as, be subject to
The restriction of photoetching technique, it is the most difficult that channel length continues reduction, adds that organic field effect tube itself has low mobility
Feature, electric current is relatively low, running voltage is higher to result in output, and operating frequency is relatively low；High Output Current is carried from device aspect
Two kinds of methods are mainly had i.e. to improve mobility and reduce channel width；In terms of channel length, owing to the field effect of planar structure exists
Reducing and be restricted in channel length, we use organic field effect tube prepared by vertical-channel, the field effect of this structure
Answer transistor channel length to be determined by organic semiconductor layer thickness, and organic semiconductor layer be use evaporation technology preparation and
Becoming, the uniformity of film that this mode is formed is good, and thickness minimum can reach several nanometer, due to being greatly lowered of channel length,
Source-drain current can significantly be improved, and this channel length is difficulty with in the field-effect transistor of horizontal channel.Greatly
Scale, in the circuit of high integration, the device of monolayer can not meet necessary requirement, owing to the thickness of organic assembly is the thinnest,
Generally by multilayer device superposition in side circuit is applied, so save space, improve integrated level；The organic field effect of vertical-channel
Another important feature answering transistor is that the circuit of two dimension can be extend to by it as interface unit between layers
Three-dimensional space structure.In sum, the field-effect transistor of vertical-channel is requisite in following organic integrated circuits,
The real realization of organic field effect tube circuit is had great importance by this utility model.
[summary of the invention]
The purpose of this utility model is to provide a kind of flexible organic three dimensional structure field-effect transistor.
The flexible organic three dimensional structure field-effect transistor of one that this utility model provides, its structure is as it is shown in figure 1, include first
Source electrode (101), the second source electrode (102), the first drain electrode (201), the second drain electrode (202), electrode extend
Layer (203), the first organic semiconductor layer (301), the second organic semiconductor layer (302), the first insulating barrier (401),
Second insulating barrier (402), gate electrode (5), flexible substrate (6)；
Wherein: flexible substrate, gate electrode, the second insulating barrier are sequentially overlapped composition, electrode extended layer and the second drain electrode position respectively
Both sides above the second insulating barrier, and electrode extended layer and the second drain electrode be connected；Second organic semiconductor layer and the second source electricity
Pole is sequentially located at above the second drain electrode, and the second organic semiconductor layer and the width of the second source electrode and the second drain electrode identical；
First insulating barrier covers above electrode extended layer, the second organic semiconductor layer and the second source electrode；First organic semiconductor layer position
Above the first insulating barrier, the first source electrode and the first drain electrode lay respectively at both sides above the first organic semiconductor layer.Constitute the
Two source electrodes are grid-shaped metal gold, and the material constituting electrode extended layer is Aurum metallicum.Constitute the first source electrode, the first drain electrode,
The material of the second drain electrode is metallic aluminium, constitute the first organic semiconductor layer, the material of the second organic semiconductor layer is phthalein mountain valley with clumps of trees and bamboo copper,
One or more in Benzo[b, P3HT, constitute the first insulating barrier, the material of the second insulating barrier is PVA, constitute gate electrode
Material is ITO, and the material constituting flexible substrate is polyethylene terephthalate (PET) or polyimides (PI)；First organic half
Conductor layer, the first source electrode and the first drain electrode entire area are less than or equal to the second source electrode.
What this utility model provided prepares the flexible organic three dimensional structure field-effect transistor method of above-mentioned one, comprises the steps:
(1) flexible substrate is sequentially placed into ultrasonic cleaning 10min in ethanol, acetone, deionized water solution, cleaned after use nitrogen
Air-blowing is done；
(2) preparing the second insulating barrier on flexible substrates, the technique of employing is spin coating, and will prepare concentration is that 20wt%PVA is water-soluble
Liquid spin coating, rotating speed is 4000rpm, and the PVA that spin coating is good is placed under 365nm wavelength (8W) ultraviolet light irradiation 10min, and is placed on
Cross-linking in the vacuum drying oven of 200 DEG C 2 hours, then anneal at 60 DEG C 30min；
(3) prepare the second source electrode and electrode extended layer over the second dielectric, use photoetching process to prepare over the second dielectric
One layer of latticed sacrifice layer, then prepare layer of metal gold by vacuum thermal evaporation, control evaporation rate and the time makes in evaporation
Aurum metallicum thickness is less than latticed sacrificial layer thickness, forms grid-shaped metal gold by releasing sacrificial layer；Electrode extended layer is by covering
Film version, uses the mode of vacuum thermal evaporation to prepare；
(4) in the second source electrode prepared and electrode extended layer, by mask plate, the mode of vacuum thermal evaporation is used to prepare
Second organic semiconductor layer, vacuum is 10-6Below Pascal；
(5) on the second organic semiconductor layer prepared, by mask plate, the mode of vacuum thermal evaporation is used to prepare the second leakage
Electrode；
(6) preparing the first insulating barrier on the second drain electrode prepared, the technique of employing is spin coating, and rotating speed is 4000rpm,
The PVA that spin coating is good is vacuum dried close annealings two hours at 150 DEG C；
(7) on the first insulating barrier prepared, by mask plate, use the mode of vacuum thermal evaporation to prepare first and organic partly lead
Body layer, vacuum is 10-6Below Pascal；
(8) on the first organic semiconductor layer prepared, by mask plate, the mode of vacuum thermal evaporation is used to prepare the first source
Electrode and the first drain electrode；
Technical Analysis of the present utility model:
In terms of channel length, owing to the field-effect transistor of planar structure is restricted in reduction channel length, we adopt
Preparing organic field effect tube with vertical-channel, the fieldistor channel length of this structure is by organic semiconductor thickness
Degree determines, and organic semiconductor layer is to use evaporation technique to be prepared from, and the uniformity of film that this mode is formed is good, thickness
Minimum can reach several nanometer, and due to being greatly lowered of channel length, source-drain current can significantly be improved；Simultaneously three
Upper and lower two-layer can be interconnected by the organic field effect tube of dimension structure, and uses same gate electrode to control, and in actual applications may be used
To control different two layer devices, there is important application meaning.
[accompanying drawing explanation]
The structural representation of the flexible organic field effect tube of a kind of three dimensional structure that Fig. 1 provides for this utility model.
In figure, 101 be the first source electrode, 102 be the second source electrode, 201 be the first drain electrode, 202 be the second drain electrode, 203
For electrode extended layer, 301 be the first organic semiconductor layer, 302 be the second organic semiconductor layer, 401 be the first insulating barrier, 402
Be the second insulating barrier, 5 be gate electrode, 6 for flexible substrate.
In the Fig. 2 flexible organic field effect tube for a kind of three dimensional structure of the bright offer of this utility model, by the second drain electrode (202),
Second organic semiconductor layer (302), the second source electrode (102), the second insulating barrier (402), gate electrode (5) form
The operation principle of vertical channel portion.
In figure, 202 be the second drain electrode, 302 be the second organic semiconductor layer, 102 be the second source electrode, 402 be the second insulating barrier,
5 is gate electrode.
[detailed description of the invention]
Below in conjunction with instantiation, the utility model is described in further detail.
As in figure 2 it is shown, the organic field effect tube operation principle of vertical-channel, the organic semiconducting materials owing to choosing is P
Type, drain-source voltage is negative, when not applying grid voltage, only deposits a small amount of holoe carrier in organic semiconductor, increases at source-drain voltage
Time big, owing to carrier quantity is few, output electric current is minimum；When applying negative-gate voltage, source electrode and grid composition capacitive junctions
Structure, the network structure that source electrode uses can make the hole charge of partial be present in organic semiconductor layer, causes organic partly leading
Carrier number in body layer increases, and output electric current increases.
The present embodiment prepares the flexible organic field effect tube of a kind of three dimensional structure as steps described below:
1) flexible substrate is sequentially placed into ultrasonic cleaning 10min in ethanol, acetone, deionized water solution, cleaned after dry up with nitrogen；
2) preparing the second insulating barrier in flexible substrate, the technique of employing is spin coating, and will prepare concentration is 20wt%PVA aqueous solution spin coating,
Rotating speed is 4000rpm, and the PVA that spin coating is good is placed under 365nm wavelength (8W) ultraviolet light irradiation 10min, and is placed on 200 DEG C
Vacuum drying oven in cross-link 2 hours, then at 60 DEG C anneal 30min；
3) prepare the second source electrode and electrode extended layer over the second dielectric, use photoetching process to prepare one layer over the second dielectric
Latticed sacrifice layer, then prepare layer of metal gold by vacuum thermal evaporation, control evaporation rate and the time makes in evaporation
Aurum metallicum thickness is less than latticed sacrificial layer thickness, forms grid-shaped metal gold by releasing sacrificial layer；Electrode extended layer leads to
Crossing mask plate uses the mode of vacuum thermal evaporation to prepare；
4) in the second source electrode prepared and electrode extended layer, by mask plate, the mode of vacuum thermal evaporation is used to prepare second
Organic semiconductor layer, vacuum is 10-6Below Pascal；
5) on the second organic semiconductor layer prepared, by mask plate, the mode of vacuum thermal evaporation is used to prepare the second drain electrode；
6) preparing the first insulating barrier on the second drain electrode prepared, the technique of employing is spin coating, and will prepare concentration is 20wt%PVA
Aqueous solution spin coating, rotating speed is 4000rpm, and the PVA that spin coating is good is vacuum dried close annealings two hours at 150 DEG C；
7) on the first insulating barrier prepared, by mask plate, the mode of vacuum thermal evaporation is used to prepare the first organic semiconductor layer,
Vacuum is 10-6Below Pascal；
8) on the first organic semiconductor layer prepared, by mask plate, the mode of vacuum thermal evaporation is used to prepare the first source electrode
With the first drain electrode.
Claims (9)
1. the flexible organic field effect tube of a three dimensional structure, it is characterized in that, including the first source electrode (101), the second source electrode (102), the first drain electrode (201), the second drain electrode (202), electrode extended layer (203), the first organic semiconductor layer (301), the second organic semiconductor layer (302), the first insulating barrier (401), the second insulating barrier (402), gate electrode (5), flexible substrate (6)；
Wherein: flexible substrate, gate electrode, the second insulating barrier are sequentially overlapped composition, electrode extended layer and the second drain electrode and lay respectively at both sides above the second insulating barrier, and electrode extended layer and the second drain electrode are connected；Second organic semiconductor layer and the second source electrode are sequentially located at above the second drain electrode, and the second organic semiconductor layer and the width of the second source electrode and the second drain electrode identical；First insulating barrier covers above electrode extended layer, the second organic semiconductor layer and the second source electrode；First organic semiconductor layer is positioned at above the first insulating barrier, and the first source electrode and the first drain electrode lay respectively at both sides above the first organic semiconductor layer.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that the second described source electrode is grid-shaped metal gold.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that the material of described electrode extended layer is Aurum metallicum.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that described the first source electrode, the first drain electrode, the material of the second drain electrode are metallic aluminium.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that described the first organic semiconductor layer, the material of the second organic semiconductor layer are one or more in phthalein mountain valley with clumps of trees and bamboo copper, Benzo[b, P3HT.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that described the first insulating barrier, the material of the second insulating barrier are PVA.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that the material of described gate electrode is ITO.
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that the material of described flexible substrate is polyethylene terephthalate (PET) or polyimides (PI).
The flexible organic field effect tube of a kind of three dimensional structure the most according to claim 1, it is characterised in that described the first organic semiconductor layer, the first source electrode and the first drain electrode entire area is less than or equal to the second source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620045172.5U CN205752256U (en) | 2016-01-14 | 2016-01-14 | A kind of flexible organic field effect tube of three dimensional structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620045172.5U CN205752256U (en) | 2016-01-14 | 2016-01-14 | A kind of flexible organic field effect tube of three dimensional structure |
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| CN205752256U true CN205752256U (en) | 2016-11-30 |
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| CN201620045172.5U Expired - Fee Related CN205752256U (en) | 2016-01-14 | 2016-01-14 | A kind of flexible organic field effect tube of three dimensional structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470389A (en) * | 2016-01-14 | 2016-04-06 | 中国计量学院 | Three-dimensional structured flexible organic field effect transistor |
| CN107437585A (en) * | 2017-08-10 | 2017-12-05 | 上海幂方电子科技有限公司 | It is a kind of to print the method for preparing flexible organic field effect tube entirely |
-
2016
- 2016-01-14 CN CN201620045172.5U patent/CN205752256U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470389A (en) * | 2016-01-14 | 2016-04-06 | 中国计量学院 | Three-dimensional structured flexible organic field effect transistor |
| CN107437585A (en) * | 2017-08-10 | 2017-12-05 | 上海幂方电子科技有限公司 | It is a kind of to print the method for preparing flexible organic field effect tube entirely |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 Termination date: 20170114 |
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| CF01 | Termination of patent right due to non-payment of annual fee |