CN1157807C - Organic film FET and its manufacture - Google Patents

Organic film FET and its manufacture Download PDF

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CN1157807C
CN1157807C CNB011346760A CN01134676A CN1157807C CN 1157807 C CN1157807 C CN 1157807C CN B011346760 A CNB011346760 A CN B011346760A CN 01134676 A CN01134676 A CN 01134676A CN 1157807 C CN1157807 C CN 1157807C
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organic
thin film
source
drain
organic thin
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CN1348222A (en
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董桂芳
胡远川
王立铎
邱勇
高裕弟
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清华大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0516Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0077Coordination compounds, e.g. porphyrin
    • H01L51/0078Phthalocyanine

Abstract

本发明提供了一种有机薄膜场效应晶体管及其制备方法。 The present invention provides an organic thin film transistor and a preparation method. 该晶体管结构中的源极和漏极是一组具有梳形齿合形状的平行线条,这样的源漏极结构达到了提高晶体管饱和电流和缩小晶体管面积的目的。 The source and drain of the transistor structure is a set of parallel lines having a comb-tooth shape, so the structure of the source-drain saturation current of the transistor to achieve improved reduction purposes and the transistor area. 本发明的制备方法是通过全蒸镀法正向制备有机薄膜场效应晶体管,与通常的制备工艺比较,也达到了简化工艺、降低成本的目的。 Preparation process of the present invention is prepared by a full forward organic thin film transistor vapor deposition method, compared with the conventional preparation process, has reached a simplified process, reduce costs.

Description

一种有机薄膜场效应晶体管及其制备方法 An organic thin film transistor and its method of preparation

技术领域 FIELD

本发明涉及有机电子技术领域,具体地说,涉及一种有机薄膜场效应晶体管及其制备方法。 The present invention relates to an organic electronic technologies, and in particular, relates to an organic thin film transistor and a preparation method.

背景技术 Background technique

晶体管包括双极型晶体管和场效应晶体管(Field-Effect Transistors,以下简称FETs),双极型晶体管是电流控制器件;而FETs工作过程和电子管十分相似,是电压控制器件,是利用改变电场来控制固体材料导电能力的有源器件。 Transistor comprises a bipolar transistor and FET (Field-Effect Transistors, hereinafter referred to as FETs), bipolar transistors are current controlled devices; FETs and the working process is very similar and the tube, voltage control means is controlled by changing an electric field the solid material of the conductive active device capabilities. 由于无机薄膜FETs的成本高,单晶难于制备,而且制备工艺条件苛刻,于是人们开始尝试采用有机材料替代无机材料充当绝缘层或/和半导体层等功能层,用有机材料作为半导体层等功能层制备得到的薄膜FETs也就被称为有机薄膜场效应晶体管(Organic Thin-Film Field-EffectTransistors,以下简称OTFFETs)。 Due to the high costs of the inorganic thin film FETs, difficult to prepare a single crystal, and harsh preparation conditions, people began to try organic materials instead of inorganic material serving as the insulating layer and / or the functional layer and the semiconductor layer and the like, an organic material layer functions as a semiconductor layer, preparation FETs film obtained will be referred to as an organic thin film transistor (organic thin-film Field-EffectTransistors, hereinafter referred OTFFETs).

近年来,有机薄膜晶体管(Organic Thin-Film Transistors,以下简称OTFTs)的研究工作进展迅速,并引起了人们的广泛关注。 In recent years, organic thin-film transistor (Organic Thin-Film Transistors, hereinafter referred to as the OTFTs) research work progressed rapidly, and aroused widespread concern. 与无机硅电子器件相比,有机电子器件制备方法简单,条件温和,而且有机电子器件还可以制备在聚合物基片上,得到柔软器件。 Inorganic silicon as compared with an electronic device, a simple method for preparing an organic electronic device, mild conditions, and an organic electronic device may also be prepared on the polymeric substrate, to give a soft device. 用有机半导体材料制备的器件显示出重量轻、面积大以及价格低等特点,因此可以应用在基于液晶象素或者有机发光二极管的有源平板显示(Active-Matrix Flat-PanelDisplays,以下简称AMFPDs)、电子报纸显示器(Electronic Paper Displays)的有源点阵背景、低档智能卡(Low-End Smart Cards)和电子标识牌(ElectronicIdentification Tags)。 Display device with an organic semiconductor material made of light weight, low price and a large area can therefore be applied based on the liquid crystal pixels in the active tablet or an organic light emitting diode display (Active-Matrix Flat-PanelDisplays, hereinafter referred AMFPDs), electronic newspaper monitor (electronic Paper displays) active Matrix background of low-grade smart card (Low-End smart Cards) and an electric signboard (ElectronicIdentification Tags). 利用OTFFETs得到有机集成电路、多参数气体传感器和有机电致激光的研究也在开展中。 OTFFETs obtained using organic integrated circuits, multi-parameter sensor and the gas electroluminescent studies also carried out in the laser.

1986年,A.Tsumura et al.(Macromolecular electronic device:Field-effecttransistor with a polythiophene thin film;Appl.Phys.Lett.;1986,49(18):1210-1212)首次用聚噻吩为半导体材料制备得到OTFTs后,这类晶体管的研究就得到了不断的发展。 1986, A.Tsumura et al (Macromolecular electronic device: Field-effecttransistor with a polythiophene thin film; Appl.Phys.Lett; 1986,49 (18):. 1210-1212). Polythiophene first semiconductor material is prepared to give after OTFTs, research on this type of transistor has been continuously developing. Y.-Y.Lin et al.(Stacked Pentacene Layer Organic Thin-FilmTransistors with Improved Characteristics;IEEE ELECTRON DEVICE LETTERS.;1997,18(12):606-608)使用并五苯材料得到了载流子迁移率为1.5cm2/V·s的晶体管,开关电流比达到108。 Y.-Y.Lin et al (Stacked Pentacene Layer Organic Thin-FilmTransistors with Improved Characteristics; IEEE ELECTRON DEVICE LETTERS; 1997,18 (12):. 606-608). Pentacene material obtained carrier mobility of 1.5cm2 / V · s of the transistor, the current ratio of the switch 108. 在2000年,JHSchon et al.(Appl.Phys.Lett.;2000,77(23):3776-3778)发现利用苝作为半导体材料,器件的电子迁移率可以达到5.5cm2/V·s,超过无定型硅的载流子迁移率。 In 2000, JHSchon et al (Appl.Phys.Lett; 2000,77 (23):. 3776-3778). Perylene found that the use as a semiconductor material, the electron mobility of the device can reach 5.5cm2 / V · s, no more than carrier mobility of amorphous silicon.

在对OTFTs本身性能和机理进行研究的同时,对它的应用研究也在蓬勃开展。 While on their own performance and to study the mechanism of OTFTs, the application of its research also flourished. ARBrown et al.(Logic Gates Made from Polymer Transistors and Their Use in RingOscillators;SCIENCE;1995,270:972-974)利用OTFTs制作了环形振荡器的逻辑门。 . ARBrown et al (Logic Gates Made from Polymer Transistors and Their Use in RingOscillators; SCIENCE; 1995,270: 972-974) using a logic gate OTFTs fabricated ring oscillator. 1998年,Henning Sirringhaus et al.(Integrated Optoelectronic Devices Basedon Conjugated Polymers;SCIENCE;1998,280:1741-1744)研制成了一个用OTFTs来驱动的小尺寸发光二极管。 In 1998, Henning Sirringhaus et al (Integrated Optoelectronic Devices Basedon Conjugated Polymers; SCIENCE; 1998,280: 1741-1744). Development of a light emitting diode into a small size driven by OTFTs. 同年,CJDrucy et al.(Low-cost all-polymerintegrated circuits;Appl.Phys.Lett.;1998,73(1):108-110)利用低价的全聚合物OTFTs制成了集成电路,得到了一个15位的机械可编码振荡器。 In the same year, CJDrucy et al (Low-cost all-polymerintegrated circuits; Appl.Phys.Lett; 1998,73 (1):. 108-110). The use of low-cost OTFTs made of all-polymer integrated circuit, to give a 15 may encode a mechanical oscillator.

上述成果表明,OTFTs的性能完全可以与现在使用的无定型硅晶体管相媲美,同时它在制造成本、制造条件上又远远优于无定型硅晶体管,而且OTFFETs还具有以下的优点:(1)有机薄膜技术更多、更新,使得器件的尺寸能够更小,集成度更高,这可以达到更高的运算速度和更小的操作功率;(2)由于通过对有机分子结构进行适当的修饰,可以得到不同性能的材料,因此就能够设计OTFFETs的电学性能达到理想的结果;(3)有机材料比较容易获得,OTFFETs的制作工艺也更为简单,因此能够有效地降低器件的成本;(4)全部由有机材料制备的全有机FETs具有非常好的柔韧性,使得它的应用范围得到了更进一步地拓宽。 The above results show, that of amorphous silicon can OTFTs performance comparable with currently used, and while it is far superior to that of amorphous silicon in the production cost, production conditions, but OTFFETs also has the following advantages: (1) the organic thin-film technology more updated so that the size of the device can be smaller, higher integration, which can achieve higher operation speed and a smaller operating power; (2) due to the molecular structure of the organic modified by appropriate, materials of different properties can be obtained, and therefore the electrical properties can be designed to achieve desirable results OTFFETs; (3) an organic material easier to obtain, OTFFETs also simpler production process, it is possible to effectively reduce the cost of the device; (4) all organic material prepared from all organic FETs with a very good flexibility, so that its scope of application has been further widened.

虽然OTFFETs的研究取得了巨大的发展,但是还面临着很多的问题,尤其突出的问题是常温下有机材料的场效应载流子迁移率还是大大小于无机材料,同时器件的饱和电流和开关电流比都很小,这些都限制了OTFFETs在实际中的应用。 Although OTFFETs studies made great development, but also faces many problems, particularly outstanding problem is the field-effect carrier mobility at room temperature is substantially less than the organic material or an inorganic material, while the saturation current and the ratio of the switching current of the device are small, these have limited the application of OTFFETs in practice. 设计和合成新的载流子传输材料是解决这个问题的一个重要方向;此外,通过器件结构的改善,则有可能进一步提高器件的性能,但这方面的报道很少。 The new design and carrier transport materials synthesis is an important direction to solve this problem; in addition, by improving the device structure, it is possible to further improve the performance of the device, but aspects of the few reports.

通常,作为OTFTs绝缘层的绝缘材料多数采用无机材料,它们大部分需要通过溅射法制备,而有机材料本身热稳定性比较差,如果首先制备有机半导体层,在溅射制备绝缘层的时候容易破坏有机半导体薄膜。 Typically, the insulating material of the insulating layer OTFTs most inorganic materials, most of them need to be prepared by sputtering, the organic material itself relatively poor thermal stability, if the organic semiconductor layer is first prepared, easily when sputtering the insulating layer destruction of organic semiconductor thin film. 这就使得制备FETs很多时候只能采用反向制备法,即先溅射绝缘层,然后制备半导体层,最后才制备源极和漏极(H.Fuchigami,A.Tsumura,and H.Koezuka;Appl.Phys.Lett.;1993,63(10):1372-1374‖GillesHorowitz,Francoise Deloffre,Francis Garnier,Riadh Hajlaoui,Mohamed Hmyeneand Abderrahim Yassar;Synth.Met.;1993,54:435-445)。 This makes the preparation of FETs can often employed by reverse phase preparative method, i.e., the first insulating layer is sputtered, and then preparing a semiconductor layer, and finally preparing the source and drain (H.Fuchigami, A.Tsumura, and H.Koezuka; Appl .Phys.Lett; 1993,63 (10):.. 1372-1374‖GillesHorowitz, Francoise Deloffre, Francis Garnier, Riadh Hajlaoui, Mohamed Hmyeneand Abderrahim Yassar; Synth.Met; 1993,54: 435-445). 而在有机半导体层上制备源极和漏极的时候,源漏之间的沟道长度不容易做得很小,因此不利于增大晶体管的饱和电流和缩小晶体管的面积。 And, when the organic semiconductor layer was prepared in the source and drain, the channel length between the source and drain is not easily made small, which is not conducive to increase the saturation current of the transistor and reducing the area of ​​the transistor.

发明内容 SUMMARY

本发明的目的是提供一种饱和电流大、面积小的有机薄膜场效应晶体管。 Object of the present invention is to provide a saturation current, a small area of ​​the organic thin film transistor.

本发明的另一目的是提供一种全蒸镀正向制备有机薄膜场效应晶体管的方法,以简化工艺和降低成本。 Another object of the present invention is to provide an all vapor deposition method of an organic thin film transistor was prepared forward, to simplify the process and reduce costs.

为实现上述目的,本发明的一个技术方案提供了一种有机薄膜场效应晶体管,该器件包括位于基片上的源极和漏极,以及依次位于源极、漏极和基片上的有机半导体层、有机绝缘层和栅极,其特征在于:源极和漏极是一组具有梳形齿合形状的平行线条。 To achieve the above object, an aspect of the present invention provides an organic thin film transistor, the device includes a source and a drain on the substrate, and the source successively positioned, the organic semiconductor layer on the drain and the substrate, the organic insulating layer and a gate, wherein: the source and drain is a set of parallel lines having a comb-tooth shape.

本发明提出的有机薄膜场效应晶体管,具有以下优点:由于晶体管结构中的源极和漏极是一组具有梳形齿合形状的平行线条,可以增加源漏电流,也就是说具有梳形齿合形状源漏极的晶体管可以比同样面积的但不具有梳形齿合形状源漏极的饱和电流大,达到了增大饱和电流的目的,而且为得到同样大小的饱和电流就可以相对缩小晶体管的面积。 The organic thin film transistor of the present invention proposes, has the following advantages: Since the source and drain of the transistor structure is a set of parallel lines having a comb-tooth shape, can increase the source-drain current, i.e. having a comb teeth follow the shape of the source and drain of the transistor, but may not have the same area than the comb-tooth shape of the source-drain saturation current, achieve the purpose of increasing the saturation current, and to obtain a saturation current of the same size can be relatively narrow transistors area.

本发明的另一个技术方案提供了一种有机薄膜场效应晶体管的制备方法,该方法包括以下步骤:(1)在清洗剂中超声清洗导电基片,然后用去离子水超声冲洗并烘干,其中导电基片上面有一层导电膜;(2)对上述清洗烘干后的导电基片上的导电膜进行光刻,形成一组具有梳形齿合形状平行线条的源极和漏极;(3)在上述光刻形成图形的导电基片上继续蒸镀有机半导体层;(4)在上述有机半导体层之上继续蒸镀有机绝缘层;(5)在上述有机绝缘层之上继续蒸镀金属层作为器件的栅极。 Another aspect of the present invention provides a method for preparing an organic thin film transistor, the method comprising the steps of: (1) ultrasonic cleaning conductive substrate in the cleaning agent, and then rinsed with deionized water and dried ultrasound, wherein the top layer of the conductive substrate is a conductive film; (2) a conductive film on drying after the washing photolithography electroconductive substrate, forming a set of source and drain electrodes having a comb-tooth shape parallel lines; (3 ) the organic semiconductor layer deposited on the conductive substrate continue formed in said lithographic pattern; (4) continue the organic insulating layer deposited on the organic semiconductor layer; (5) continue depositing a metal layer over the organic insulating layer the gate device.

本发明的又一技术方案提供了一种根据上述方法所制备的有机薄膜场效应晶体管,该器件具有梳状齿合形状平行线条的源极和漏极,而且该器件采用可蒸镀且成膜性能好的有机绝缘材料充当绝缘层,通过全蒸镀法正向制备了有机薄膜场效应晶体管,即在光刻完源极和漏极后,制备有机半导体层和有机绝缘层,最后制备栅极。 A further aspect of the present invention provides a field-effect transistor is one kind of an organic thin film prepared according to the method described above, the device having a comb-tooth shape parallel source and drain lines, and the device uses deposition and vapor deposition can be good performance of an organic insulating material acts as an insulating layer, a vapor deposition method by the full forward preparing an organic thin film transistor, i.e. the lithography after source and drain electrodes, organic semiconductor layer and an organic insulating layer was prepared, the preparation of the final gate . 该绝缘层薄膜优选为聚四氟乙烯(以下简称Teflon)、聚酰亚胺(以下简称PI)等具有良好绝缘性能的薄膜。 The insulating film layer is preferably polytetrafluoroethylene (hereinafter referred to as Teflon), polyimide (hereinafter referred to as PI) film and the like having good insulating properties. 上述方法由于采用了光刻的源极和漏极,使得整个晶体管的面积和沟道宽长比容易控制,可以缩小晶体管面积,有效提高饱和电流。 As a result of the above-described method of lithography source and drain electrodes, so that the entire area of ​​the transistor and a channel width to length ratio is easily controlled, the area of ​​the transistor can be reduced, effectively increasing the saturation current.

本发明提供的有机薄膜场效应晶体管,可以达到提高晶体管饱和电流和缩小晶体管面积的目的。 The organic thin film transistor of the present invention provides, can improve the saturation current of the transistor and the transistor area reduction purposes. 当采用高载流子迁移率的有机半导体材料铜酞菁(copper phthalocyanine,以下简称CuPc)充当半导体层,及采用具有良好绝缘性能的有机材料Teflon充当绝缘层时,可获得性能优越的有机薄膜场效应晶体管。 When high carrier mobility of an organic semiconductor material such as copper phthalocyanine (copper phthalocyanine, hereinafter referred to as CuPc) serving as a semiconductor layer, and the organic material having good insulating properties Teflon serving as the insulating layer, an organic thin film obtained superior performance field effect transistor. 所制得的晶体管具有高饱和电流、高开关电流比、晶体管面积小等特点。 The resulting transistor has a high saturation current, higher than the switching current, and small area of ​​the transistor characteristics. 而且与通常的有机薄膜场效应晶体管的制备工艺比较,本发明达到了简化工艺、降低成本的目的。 And compared with the usual preparation process of an organic thin film transistor, the present invention achieves the simplification of the process, reduce costs. 运用本发明的制备方法制备得到的有机薄膜场效应晶体管(结构为氧化铟锡(Indium-Tin-Oxide,以下简称ITO)/CuPc/Teflon/Ag)未达到饱和时在不同栅极偏压下的漏源电流—漏源电压特性曲线、跨导—栅极偏压和输出阻抗—漏源电压特性曲线分别见图7、图8。 The organic thin film transistor was prepared using the method of the present invention is prepared (structure indium tin oxide (Indium-Tin-Oxide, hereinafter referred to as ITO) / CuPc / Teflon / Ag) does not reach saturation at different gate bias drain-source current - drain voltage characteristic curve of the transconductance - gate bias voltage and the output impedance - drain-source voltage characteristic curves shown in Figure 7, FIG. 8. 我们还对蒸镀到器件上的Teflon薄膜进行了成份测试和薄膜形态测试,图5A、图5B和图6分别为Teflon薄膜的x射线能谱(以下简称XPS)图和原子力显微镜(以下简称AFM)图。 We are also deposited on the device to a Teflon film composition was tested and the test film morphology, 5A, 5B, and 6 are Teflon film x-ray spectroscopy (hereinafter referred to as XPS) and FIG atomic force microscope (hereinafter AFM ) Fig. 从图6中我们可以看出,绝缘层薄膜并没有因为蒸镀而变性,同时Teflon的成膜性能也相当好,薄膜均匀致密。 We can see from Figure 6, the insulating film layer is not deposited because of denaturation, Teflon film-forming properties at the same time is also quite good, uniform and dense film.

下面通过附图说明,本发明可变得更加清楚。 BRIEF DESCRIPTION below, the present invention may become more apparent.

附图说明 BRIEF DESCRIPTION

图1是本发明有机薄膜场效应晶体管的俯视示意图。 FIG 1 is a field effect organic thin film transistor of the present invention is a top schematic view.

图2是本发明有机薄膜场效应晶体管结构剖面示意图。 FIG 2 is an organic thin film transistor of the present invention is a cross-sectional structure of FIG.

图3是本发明中导电基片光刻形成四组具有梳形齿合平行线条的源极和漏极的基片图形示意图。 FIG 3 is a schematic view of four substrates having a pattern source and drain lines parallel to the comb tooth of the conductive substrate is formed by photolithography in the present invention.

图4是本发明中导电基片光刻形成一组具有梳形齿合平行线条的源极和漏极的图形示意图(即图3中带箭头方框的放大图)。 FIG 4 is a group of the present invention in a schematic view of a pattern source and drain lines parallel to the comb tooth of the conductive substrate is formed by photolithography (i.e., a block with an arrow in FIG. 3 in an enlarged view).

上述图1~图4中,1为基片,2为源极,3为漏极,4为有机半导体层,5为有机绝缘层,6为栅极。 In the above-described FIGS. 1 to 4, 1 is a substrate, 2 is a source, a drain 3, an organic semiconductor layer 4, an organic insulating layer 5, 6 is a gate.

图5A是运用本发明的制备方法制备出Teflon薄膜的F-XPS图。 5A is a use of F-XPS FIG Preparation process of the invention the Teflon film.

图5B是运用本发明的制备方法制备出Teflon薄膜的C-XPS图。 5B is a C-XPS FIG prepared Teflon film was prepared using the method of the present invention.

图6是运用本发明的制备方法制备出Teflon薄膜的AFM图。 FIG 6 is the use of AFM in FIG Preparation method of the present invention is a Teflon film.

图7是运用本发明的制备方法制备的有机薄膜场效应晶体管(结构为ITO/CuPc/Teflon/Ag)未达到饱和时在不同栅极偏压下的漏源电流—漏源电压特性曲线,其中VG为栅极偏压。 FIG 7 is prepared using the method of the present invention is the preparation of the organic thin film transistor (the structure of ITO / CuPc / Teflon / Ag) at different drain-source current when no gate bias is saturated - drain voltage characteristic curve, wherein VG is the gate bias.

图8是运用本发明的制备方法制备的有机薄膜场效应晶体管(结构为ITO/CuPc/Teflon/Ag)的跨导—栅极偏压和输出阻抗—漏源电压特性曲线,其中gm为跨导,rD为输出阻抗,IDS为漏源电流,VDS为漏源电压,VG为栅极偏压,gm、rD分别由公式①、②表示: FIG 8 is prepared using the preparation method of an organic thin film transistor (the structure of ITO / CuPc / Teflon / Ag) of the transconductance - gate bias voltage and the output impedance - drain-source voltage characteristic curve, where gm is the transconductance , rD is the output impedance, IDS is the drain-source current, VDS is the drain-source voltage, VG is the gate bias voltage, gm, rD respectively by the formulas ①, ② represents: 图中有□标记的曲线为跨导—栅极偏压特性曲线,有●标记的曲线为输出阻抗—漏源电压特性曲线。 FIG curve □ mark has transconductance - gate bias characteristic curve, a graph is marked with a ● output impedance - drain-source voltage characteristic.

下面结合附图和实施例详细阐述本发明的内容。 Example embodiments and drawings set forth in detail below in connection with the present invention.

具体实施方式 Detailed ways

本发明提出的有机薄膜场效应晶体管结构如图2所示,其中:1为基片,可以是玻璃或者塑料;2为器件的源极,3为器件漏极,一般为ITO、氧化锌、氧化锡锌等金属氧化物或金、铜、银等功函数较高的金属,经过优化为ITO;4是有机半导体层,半导体层由具有较高载流子迁移率的有机半导体材料组成,如酞菁类金属有机化合物、低聚噻吩类化合物、并五苯等;5是有机绝缘层,绝缘层由可蒸镀且具有良好绝缘性能、成膜性能的有机材料组成,经过优化为Teflon、PI等;6为器件的栅极,为金属层,一般为金、银等功函数较高的金属。 The organic thin film transistor of the present invention proposed structure shown in Figure 2, where: 1 is the substrate, may be glass or plastic; device 2 as the source electrode, the drain 3 of the device, typically ITO, zinc oxide, tin or zinc and other metal oxides of gold, copper, silver, other high work function metals, are optimized for the ITO; 4 is an organic semiconductor layer, a semiconductor layer of an organic semiconductor material having higher charge carrier mobility composition, such as phthalocyanine metal phthalocyanine compounds, oligothiophene compounds, pentacene; 5 is an organic insulating layer, the insulating layer by a vapor deposition and has good insulating properties, film forming properties of organic material, is optimized Teflon, PI, etc. ; gate device 6, a metal layer, typically gold, silver and other high work function metals.

实施例一:在弱碱性清洗剂中超声清洗方块电阻为15Ω的ITO玻璃,然后用去离子水超声冲洗两遍并烘干,其中ITO的膜厚为150nm。 Example a: ultrasonic cleaning sheet resistance in a weakly alkaline cleaner is 15Ω ITO glass, and then washed twice with deionized water and dried ultrasound, wherein the film thickness of ITO is 150nm. 对ITO薄膜进行光刻,形成一组具有梳形齿合平行线条的源极和漏极,光刻形成的图形如图4所示,沟道长度为50μm,沟道宽度为81mm,沟道宽长比为1620。 Photolithography on the ITO film, forming a set of source and drain electrodes having a comb teeth engaged in parallel lines, the pattern formed by photolithography as shown, the channel length is 4 50μm, 81mm channel width, the channel width longer than 1620. 把光刻形成图形的ITO玻璃置于压力为1×10-3Pa的真空镀膜腔内,利用热蒸发方法在向已有ITO源漏极的基片上蒸镀CuPc薄膜作为有机半导体层,蒸镀速率为0.05nm/s,薄膜厚度为250nm。 The photolithography pattern was placed ITO glass vacuum coating chamber pressure of 1 × 10-3Pa, deposition by thermal evaporation method on the CuPc film has ITO source and drain of the organic semiconductor layer as a substrate, vapor deposition rate of / s, the film thickness of 0.05nm to 250nm. 蒸镀完CuPc以后,继续蒸镀Tefflon薄膜作为有机绝缘层,蒸镀速率为0.03nm/s,薄膜厚度为400nm。 After completion of the deposition of CuPc, the organic film as continued Tefflon deposited insulating layer, the vapor deposition rate of 0.03nm / s, a film thickness of 400nm. 最后蒸镀金属层充当栅极,金属层为Ag,Ag电极的蒸镀速率为1.0nm/s,厚度为300nm。 Finally depositing a metal layer serves as a gate electrode, the metal layer is Ag, Ag electrode deposition rate is 1.0nm / s, a thickness of 300nm. 该晶体管在栅极偏压10V的时候,开关电流比大于103,最大电流超过0.2mA。 The transistor when the gate bias voltage of 10V, the switching current is greater than 103, the maximum current exceeding 0.2mA.

实施例二:在弱碱性清洗剂中超声清洗方块电阻为30Ω的ITO玻璃,然后用去离子水超声冲洗两遍并烘干,其中ITO的膜厚为180nm。 Second Embodiment: In the ultrasonic cleaning weakly alkaline cleaner ITO glass sheet resistance of 30Ω, and then washed twice with deionized water and dried ultrasound, wherein the film thickness of ITO is 180nm. 对ITO薄膜进行光刻,形成一组具有梳形齿合平行线条的源极和漏极,光刻形成的图形如图4所示,沟道长度为50μm,沟道宽度为81mm,沟道宽长比为1620。 Photolithography on the ITO film, forming a set of source and drain electrodes having a comb teeth engaged in parallel lines, the pattern formed by photolithography as shown, the channel length is 4 50μm, 81mm channel width, the channel width longer than 1620. 把光刻形成图形的ITO玻璃置于压力为1×10-3Pa的真空镀膜腔内,利用热蒸发方法在向已有ITO源漏极的基片上蒸镀并五苯薄膜作为有机半导体层,蒸镀速率为0.05nm/s,薄膜厚度为300nm。 The photolithography pattern was placed ITO glass vacuum coating chamber pressure of 1 × 10-3Pa, deposition by thermal evaporation method on the pentacene film prior to the ITO substrate as source and drain of the organic semiconductor layer, was distilled plating rate of 0.05nm / s, film thickness of 300nm. 蒸镀完并五苯后,继续蒸镀Teflon薄膜作为有机绝缘层,蒸镀速率为0.03nm/s,薄膜厚度为500nm。 After evaporation pentacene, Teflon film deposition continues as the organic insulating layer, the vapor deposition rate of 0.03nm / s, a film thickness of 500nm. 最后蒸镀金属层充当栅极,金属层依次由Au和Ag组成,Au电极的蒸镀速率为0.3nm/s,厚度为50nm,Ag电极的蒸镀速率为1.0nm/s,薄膜厚度为250nm。 Finally depositing a metal layer serves as a gate electrode, a metal layer are Au and Ag, Au electrode was vapor deposition rate 0.3nm / s, a thickness of 50 nm, deposition rate of Ag electrode was 1.0nm / s, a film thickness of 250nm . 该晶体管在栅极偏压10V的时候,开关电流比大于104,最大电流超过0.2mA。 The transistor when the gate bias voltage of 10V, the switching current is greater than 104, the maximum current exceeding 0.2mA.

实施例三:在弱碱性清洗剂中超声清洗方块电阻为15Ω的ITO玻璃,然后用去离子水超声冲洗两遍并烘干,其中ITO的膜厚为150nm。 Third Embodiment: In the ultrasonic cleaning weakly alkaline cleaner ITO glass sheet resistance of 15Ω, and then washed twice with deionized water and dried ultrasound, wherein the film thickness of ITO is 150nm. 对ITO薄膜进行光刻,形成一组具有梳形齿合平行线条的源极和漏极,光刻形成的图形如图4所示,沟道长度为50μm,沟道宽度为81mm,沟道宽长比为1620。 Photolithography on the ITO film, forming a set of source and drain electrodes having a comb teeth engaged in parallel lines, the pattern formed by photolithography as shown, the channel length is 4 50μm, 81mm channel width, the channel width longer than 1620. 把光刻形成图形的ITO玻璃置于压力为5×10-4Pa的真空镀膜腔内,利用热蒸发方法在向已有ITO源漏极的基片上蒸镀并五苯薄膜作为有机半导体层,蒸镀速率为0.03nm/s,薄膜厚度为150nm。 The photolithography pattern was placed ITO glass vacuum coating chamber pressure of 5 × 10-4Pa, deposition by thermal evaporation method on the pentacene film prior to the ITO substrate as source and drain of the organic semiconductor layer, was distilled plating rate of 0.03nm / s, a film thickness of 150nm. 在蒸镀完并五苯以后,继续蒸镀Teflon薄膜作为有机绝缘层,蒸镀速率为0.02nm/s,薄膜厚度为500nm。 After the completion of the vapor deposition pentacene, Teflon film deposition continues as the organic insulating layer, the vapor deposition rate of 0.02nm / s, a film thickness of 500nm. 最后蒸镀金属层充当栅极,金属层依次由Au和Ag组成,Au电极的蒸镀速率为0.3nm/s,厚度为50nm,Ag电极的蒸镀速率为1.0nm/s,薄膜厚度为250nm。 Finally depositing a metal layer serves as a gate electrode, a metal layer are Au and Ag, Au electrode was vapor deposition rate 0.3nm / s, a thickness of 50 nm, deposition rate of Ag electrode was 1.0nm / s, a film thickness of 250nm . 该晶体管在栅极偏压10V的时候,开关电流比大于105,最大电流超过0.2mA。 The transistor when the gate bias voltage of 10V, the switching current is greater than 105, the maximum current exceeding 0.2mA.

尽管结合优选实施例对本发明进行了说明,但本发明并不局限于上述实施例,应当理解,在本发明构思的引导下,本领域技术人员可进行各种修改和改进,所附权利要求概括了本发明的范围。 While various embodiments of the present invention has been described, but the present invention is not limited to the above embodiments, it should be understood that, under the guidance of the inventive concept, those skilled in the art that various modifications and improvements, the appended claims are summarized embodiments the scope of the present invention.

Claims (8)

1.一种有机薄膜场效应晶体管,该器件包括位于基片上的源极和漏极,以及依次位于源极、漏极和基片上的有机半导体层、有机绝缘层和栅极,其特征在于:源极和漏极是一组具有梳形齿合形状的平行线条。 1. An organic thin film field-effect transistor, the device includes a source and a drain on the substrate, and the source successively positioned, the organic semiconductor layer on the drain and the substrate, an organic insulating layer and a gate electrode, wherein: source and drain is a set of parallel lines having a comb-tooth shape.
2.如权利要求1所述的有机薄膜场效应晶体管,其特征在于,所述的有机绝缘层材料是用蒸镀的方法制备的。 2. The organic thin film transistor according to claim 1, wherein said organic insulating layer material is prepared by the method of evaporation.
3.如权利要求1或2所述的有机薄膜场效应晶体管,其特征在于,所述的有机绝缘层材料为聚四氟乙烯或聚酰亚胺。 Or an organic thin film transistor according to claim 12, wherein said organic insulating layer material is polytetrafluoroethylene or a polyimide.
4.如权利要求1所述的有机薄膜场效应晶体管,其特征在于,所述的源极和漏极材料为氧化铟锡、氧化锌或氧化锡锌。 4. The organic thin film transistor according to claim 1, wherein said source and drain electrode material is indium tin oxide, zinc oxide, tin oxide or zinc.
5.如权利要求1所述的有机薄膜场效应晶体管,其特征在于,所述的有机半导体层材料为酞菁类金属有机化合物、低聚噻吩类化合物或并五苯。 5. The organic thin film transistor according to claim 1, wherein said organic semiconductor material is a layer of metal phthalocyanine compounds, oligothiophene compounds, or pentacene.
6.如权利要求1所述的有机薄膜场效应晶体管,其特征在于,所述的栅极材料依次为金、银。 The organic thin film transistor according to claim 1, wherein said gate material were gold and silver.
7.一种制备权利要求1所述的有机薄膜场效应晶体管的方法,该方法包括以下步骤:(1)在清洗剂中超声清洗导电基片,然后用去离子水超声冲洗并烘干,其中导电基片上面有一层导电膜;(2)对上述清洗烘干后的导电基片上的导电膜进行光刻,形成一组具有梳形齿合形状平行线条的源极和漏极;(3)在上述光刻形成图形的导电基片上继续蒸镀有机半导体层;(4)在上述有机半导体层之上继续蒸镀有机绝缘层;(5)在上述有机绝缘层之上继续蒸镀金属层作为器件的栅极。 An organic thin film transistor 7. A preparation according to claim 1, the method comprising the steps of: (1) ultrasonic cleaning conductive substrate in the cleaning agent, and then rinsed with deionized water and dried ultrasound, wherein a conductive layer of a conductive film above the substrate; (2) a conductive film on drying after the washing photolithography electroconductive substrate, forming a set of source and drain electrodes having a comb-tooth shape parallel lines; (3) the organic semiconductor layer deposited on the conductive substrate continue formed in said lithographic pattern; (4) continue the organic insulating layer deposited on the organic semiconductor layer; (5) continue depositing a metal layer over the organic insulating layer as a the gate device.
8.如权利要求7所述的有机薄膜场效应晶体管的制备方法,其特征在于,其中所述的导电基片为氧化铟锡玻璃。 Preparation of an organic thin film transistor as claimed in claim 7, wherein, wherein said conductive substrate is indium tin oxide glass.
CNB011346760A 2001-11-09 2001-11-09 Organic film FET and its manufacture CN1157807C (en)

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