CN1157807C - Organic film FET and its manufacture - Google Patents
Organic film FET and its manufacture Download PDFInfo
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- CN1157807C CN1157807C CNB011346760A CN01134676A CN1157807C CN 1157807 C CN1157807 C CN 1157807C CN B011346760 A CNB011346760 A CN B011346760A CN 01134676 A CN01134676 A CN 01134676A CN 1157807 C CN1157807 C CN 1157807C
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- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims description 29
- 230000008020 evaporation Effects 0.000 claims description 29
- 238000001259 photo etching Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000012459 cleaning agent Substances 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 230000002262 irrigation Effects 0.000 claims description 5
- 238000003973 irrigation Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 150000003577 thiophenes Chemical class 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims 1
- 239000011368 organic material Substances 0.000 abstract description 9
- 230000005669 field effect Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 2
- 238000010025 steaming Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 23
- 229920006362 Teflon® Polymers 0.000 description 15
- 239000004809 Teflon Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 7
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 6
- 230000037230 mobility Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002353 field-effect transistor method Methods 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010026 decatizing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- Thin Film Transistor (AREA)
Abstract
The present invention provides an organic film field effect transistor and a preparation method thereof. A device comprises a first, a second and a third electrodes, an organic semiconductor layer and an insulating layer, wherein the first electrode and the second electrode are close to a base sheet and are parallel in a comb shape, the third electrode is far away from the base sheet, and the organic semiconductor layer and the insulating layer are clamped among the first, the second and the third electrodes. The insulating layer in the preparation method adopts organic materials having good insulating performance, and the organic film field effect transistor is prepared in a forward direction through a full steaming and plating method. Thereby, the saturation current of the transistor is effectively increased, and transistor areas are reduced.
Description
Technical field
The present invention relates to the organic electronic technical field, specifically, relate to a kind of organic film FET and preparation method thereof.
Background technology
Transistor comprises bipolar transistor and field-effect transistor (Field-Effect Transistors is hereinafter to be referred as FETs), and bipolar transistor is a current control device; And the FETs course of work and electron tube are quite similar, are voltage control devices, are to utilize to change the active device that electric field is controlled the solid material conductive capability.Because the cost height of inorganic thin film FETs, monocrystalline is difficult to preparation, and preparation process condition harshness, so beginning to attempt adopting organic material to substitute inorganic material, people serve as insulating barrier or/and functional layers such as semiconductor layers, the film F ETs for preparing as functional layers such as semiconductor layers with organic material also just is called as organic film FET (Organic Thin-Film Field-EffectTransistors is hereinafter to be referred as OTFFETs).
In recent years, the research work of OTFT (Organic Thin-Film Transistors is hereinafter to be referred as OTFTs) progress is rapid, and has caused people's extensive concern.Compare with the inorganic silicon electronic device, the organic electronic device preparation method is simple, mild condition, and also organic electronic device can also prepare on polymer matrix film, obtains soft device.Demonstrate characteristics such as in light weight, that area is big and price is low with the device of organic semiconducting materials preparation, therefore can be applied in the active flat panel display (Active-Matrix Flat-PanelDisplays is hereinafter to be referred as AMFPDs) based on liquid crystal pixel or Organic Light Emitting Diode, the active dot matrix background of electronic newspaper display (Electronic Paper Displays), low-grade smart card (Low-End Smart Cards) and electronic mark board (ElectronicIdentification Tags).Utilize OTFFETs to obtain the research of organic integration circuit, multi-parameter gas transducer and organic electroluminescence laser also in carrying out.
1986, A.Tsumura et al. (Macromolecular electronic device:Field-effecttransistor with a polythiophene thin film; Appl.Phys.Lett.; 1986,49 (18): be that the research of this transistorlike had just obtained continuous development after semi-conducting material prepared OTFTs with polythiophene first 1210-1212).Y.-Y.Lin et al. (Stacked Pentacene Layer Organic Thin-FilmTransistors with Improved Characteristics; IEEE ELECTRON DEVICE LETTERS.; 1997,18 (12): 606-608) use the pentacene material to obtain carrier mobility and be 1.5cm
2The transistor of/Vs, switch current ratio reaches 10
8In 2000, J.H.Schon et al. (Appl.Phys.Lett.; 2000,77 (23): 3776-3778) find Li Yong perylene as semi-conducting material, the electron mobility of device can reach 5.5cm
2/ Vs is above the carrier mobility of unformed silicon.
When performance own and mechanism are studied to OTFTs, to its application study also in mushroom development.A.R.Brown et al. (Logic Gates Made from Polymer Transistors and Their Use in RingOscillators; SCIENCE; 1995,270:972-974) utilize OTFTs to make the gate of ring oscillator.1998, Henning Sirringhaus et al. (Integrated Optoelectronic Devices Basedon Conjugated Polymers; SCIENCE; 1998,280:1741-1744) be developed into a small size light-emitting diode that drives with OTFTs.The same year, C.J.Drucy et al. (Low-cost all-polymerintegrated circuits; Appl.Phys.Lett.; 1998,73 (1): 108-110) utilize all-polymer OTFTs at a low price to make integrated circuit, obtained one 15 mechanical codified oscillator.
Above-mentioned achievement shows that the performance of OTFTs can compare favourably with the unformed silicon transistor of present use fully, and simultaneously it is far superior to unformed silicon transistor again in manufacturing cost, on creating conditions, and OTFFETs also has following advantage:
(1) more, the renewal of organic film technology makes that size of devices can be littler, and integrated level is higher, and this can reach higher arithmetic speed and littler operand power;
(2) owing to by organic molecular structure is carried out suitable modification, can obtain the material of different performance, the electric property that therefore just can design OTFFETs does the trick;
(3) the organic material ratio is easier to obtain, and the manufacture craft of OTFFETs is also more simple, therefore can reduce device cost effectively;
(4) the full organic FET s that is all prepared by organic material has extraordinary pliability, makes its range of application obtain further widening.
Though the research of OTFFETs has obtained huge development, but also be faced with a lot of problems, especially distinct issues are field effect carrier mobilities of organic material under the normal temperature or are significantly smaller than inorganic material, the saturation current and the switch current ratio of device are all very little simultaneously, and these have all limited OTFFETs application in practice.Design and synthetic new carrier transmission material are important directions that addresses this problem; In addition, by the improvement of device architecture, then might further improve the performance of device, but the report of this respect seldom.
Usually, as the most inorganic material that adopt of the insulating material of OTFTs insulating barrier, their major parts need prepare by sputtering method, and the thermal stability of organic material own is poor, if at first prepare organic semiconductor layer, when preparing insulating barrier, sputter destroys organic semiconductor thin-film easily.This just makes preparation FETs many times can only adopt reverse preparation method, and promptly first sputter insulating barrier prepares semiconductor layer then, just prepares source electrode and drain electrode (H.Fuchigami, A.Tsumura, and H.Koezuka at last; Appl.Phys.Lett.; 1993,63 (10): 1372-1374 ‖ GillesHorowitz, Francoise Deloffre, Francis Garnier, Riadh Hajlaoui, Mohamed Hmyeneand Abderrahim Yassar; Synth.Met.; 1993,54:435-445).And on organic semiconductor layer, prepare in source electrode and the drain electrode, the channel length between leak in the source is not allowed to be easy to do very for a short time, therefore is unfavorable for increasing transistorized saturation current and dwindles transistorized area.
Summary of the invention
The purpose of this invention is to provide the organic film FET that a kind of saturation current is big, area is little.
Another object of the present invention provides the method that a kind of pressure decatizing plating forward prepares organic film FET, to simplify technology and to reduce cost.
For achieving the above object, a technical scheme of the present invention provides a kind of organic film FET, this device comprises and is positioned at on-chip source electrode and drain electrode, and be positioned at source electrode, drain electrode and on-chip organic semiconductor layer, organic insulator and grid successively, it is characterized in that: source electrode and drain electrode are one group of parallel lines with the meshing shape of comb shape.
The organic film FET that the present invention proposes has the following advantages:
Because source electrode in the transistor arrangement and drain electrode are one group of parallel lines with the meshing shape of comb shape, can increase source-drain current, that is to say have the meshing shape source-drain electrode of comb shape transistor can than same area but not have a saturation current of the meshing shape source-drain electrode of comb shape big, reached the purpose that increases saturation current, and just can dwindle transistorized area relatively for obtaining onesize saturation current.
Another technical scheme of the present invention provides a kind of preparation method of organic film FET, and this method may further comprise the steps:
(1) ultrasonic cleaning conductive substrate in cleaning agent with deionized water ultrasonic irrigation and oven dry, wherein has one deck conducting film then above the conductive substrate;
(2) conducting film on the conductive substrate behind the above-mentioned cleaning, drying is carried out photoetching, form one group of source electrode and drain electrode with the meshing shape parallel lines of comb shape;
(3) on the conductive substrate of above-mentioned photoetching formation figure, continue the evaporation organic semiconductor layer;
(4) on above-mentioned organic semiconductor layer, continue the evaporation organic insulator;
(5) on above-mentioned organic insulator, continue the grid of evaporated metal layer as device.
It is a kind of according to the prepared organic film FET of said method that another technical scheme of the present invention provides, this device has the source electrode and the drain electrode of the meshing shape parallel lines of pectination, and but this device adopts evaporation and the good organic insulating material of filming performance to serve as insulating barrier, prepared organic film FET by full vapour deposition method forward, promptly after intact source electrode of photoetching and drain electrode, preparation organic semiconductor layer and organic insulator prepare grid at last.This insulating layer of thin-film is preferably the film that polytetrafluoroethylene (hereinafter to be referred as Teflon), polyimides (hereinafter to be referred as PI) etc. have the good insulation performance.Said method makes whole transistor area and channel width-over-length ratio control easily owing to adopted the source electrode and the drain electrode of photoetching, can dwindle transistor area, effectively improves saturation current.
Organic film FET provided by the invention can reach the purpose that improves transistor saturation current and dwindle transistor area.As organic semiconducting materials copper phthalocyanine (the copper phthalocyanine that adopts high carrier mobility, hereinafter to be referred as CuPc) serve as semiconductor layer, reach when adopting organic material Teflon to serve as insulating barrier the organic film FET that availability is superior with good insulation performance.Prepared transistor has characteristics such as high saturation current, high switch current ratio, transistor area be little.And with the preparation technology of common organic film FET relatively, the present invention has reached the purpose of simplifying technology, reducing cost.(structure is that drain-source current-drain-source voltage characteristic curve, mutual conductance-grid bias and the output impedance-drain-source voltage characteristic curve of tin indium oxide (Indium-Tin-Oxide is hereinafter to be referred as ITO)/when CuPc/Teflon/Ag) not reaching capacity under different grid biases is seen Fig. 7, Fig. 8 respectively to use the organic film FET that preparation method of the present invention prepares.We have also carried out composition test and film morphology test to evaporation to the Teflon film on the device, and Fig. 5 A, Fig. 5 B and Fig. 6 are respectively x ray energy spectrum (hereinafter to be referred as the XPS) figure and atomic force microscope (hereinafter to be referred as the AFM) figure of Teflon film.From Fig. 6 we as can be seen, insulating layer of thin-film is not because evaporation and sex change, the filming performance of Teflon is also fairly good simultaneously, the film even compact.
Below by description of drawings, it is clearer that the present invention can become.
Description of drawings
Fig. 1 is the schematic top plan view of organic film FET of the present invention.
Fig. 2 is an organic film FET structural profile schematic diagram of the present invention.
Fig. 3 is that the conductive substrate photoetching forms four groups and has the source electrode of the meshing parallel lines of comb shape and the substrate pictorial diagram of drain electrode among the present invention.
Fig. 4 is that the conductive substrate photoetching forms one group and has the source electrode of the meshing parallel lines of comb shape and the pictorial diagram of drain electrode (being the enlarged drawing of band arrow square frame among Fig. 3) among the present invention.
Among above-mentioned Fig. 1～Fig. 4,1 is substrate, and 2 is source electrode, and 3 are drain electrode, and 4 is organic semiconductor layer, and 5 is organic insulator, and 6 is grid.
Fig. 5 A is the F-XPS figure that utilization preparation method of the present invention prepares the Teflon film.
Fig. 5 B is the C-XPS figure that utilization preparation method of the present invention prepares the Teflon film.
Fig. 6 is the AFM figure that utilization preparation method of the present invention prepares the Teflon film.
Fig. 7 is drain-source current-drain-source voltage characteristic curve, the wherein V of organic film FET (structure is ITO/CuPc/Teflon/Ag) when not reaching capacity under different grid biases of utilization preparation method's preparation of the present invention
GBe grid bias.
Fig. 8 is the mutual conductance-grid bias and output impedance-drain-source voltage characteristic curve, the wherein g of the organic film FET (structure is ITO/CuPc/Teflon/Ag) of utilization preparation method's preparation of the present invention
mBe mutual conductance, r
DBe output impedance, I
DSBe drain-source current, V
DSBe drain-source voltage, V
GBe grid bias, g
m, r
DRespectively by formula 1., 2. the expression:
Have among the figure
The curve of mark is mutual conductance-grid bias characteristic curve, has
●The curve of mark is output impedance-drain-source voltage characteristic curve.
Elaborate content of the present invention below in conjunction with drawings and Examples.
Embodiment
The organic film FET structure that the present invention proposes as shown in Figure 2, wherein: 1 is substrate, can be glass or plastics; 2 is the source electrode of device, and 3 is device drain, is generally the higher metals of work function such as metal oxide such as ITO, zinc oxide, zinc tin oxide or gold, copper, silver, through being optimized for ITO; The 4th, organic semiconductor layer, semiconductor layer is made up of the organic semiconducting materials with higher carrier mobility, as phthalocyanines metallo-organic compound, Oligopoly thiophene compounds, pentacene etc.; The 5th, organic insulator, but insulating barrier form by evaporation and organic material with good insulation performance, filming performance, through being optimized for Teflon, PI etc.; 6 is the grid of device, is metal level, is generally the higher metals of work function such as gold, silver.
Embodiment one:
The ultrasonic cleaning square resistance is the ito glass of 15 Ω in the alkalescent cleaning agent, and with twice of deionized water ultrasonic irrigation and oven dry, wherein the thickness of ITO is 150nm then.Ito thin film is carried out photoetching, forms one group of source electrode and drain electrode with the meshing parallel lines of comb shape, the figure that photoetching forms as shown in Figure 4, channel length is 50 μ m, channel width is 81mm, channel width-over-length ratio is 1620.It is 1 * 10 that the ito glass of photoetching formation figure is placed pressure
-3In the vacuum coating chamber of Pa, utilize thermal evaporation method in that evaporation CuPc film is as organic semiconductor layer on the substrate of existing ITO source-drain electrode, evaporation speed is 0.05nm/s, and film thickness is 250nm.After the intact CuPc of evaporation, continue evaporation Tefflon film as organic insulator, evaporation speed is 0.03nm/s, and film thickness is 400nm.Last evaporated metal layer is served as grid, and metal level is Ag, and the evaporation speed of Ag electrode is 1.0nm/s, and thickness is 300nm.This transistor is in grid bias 10V, and switch current ratio is greater than 10
3, maximum current surpasses 0.2mA.
Embodiment two:
The ultrasonic cleaning square resistance is the ito glass of 30 Ω in the alkalescent cleaning agent, and with twice of deionized water ultrasonic irrigation and oven dry, wherein the thickness of ITO is 180nm then.Ito thin film is carried out photoetching, forms one group of source electrode and drain electrode with the meshing parallel lines of comb shape, the figure that photoetching forms as shown in Figure 4, channel length is 50 μ m, channel width is 81mm, channel width-over-length ratio is 1620.It is 1 * 10 that the ito glass of photoetching formation figure is placed pressure
-3In the vacuum coating chamber of Pa, utilize thermal evaporation method in that the evaporation pentacene thin film is as organic semiconductor layer on the substrate of existing ITO source-drain electrode, evaporation speed is 0.05nm/s, and film thickness is 300nm.Behind the intact pentacene of evaporation, continue evaporation Teflon film as organic insulator, evaporation speed is 0.03nm/s, and film thickness is 500nm.Last evaporated metal layer is served as grid, and metal level is made up of Au and Ag successively, and the evaporation speed of Au electrode is 0.3nm/s, and thickness is 50nm, and the evaporation speed of Ag electrode is 1.0nm/s, and film thickness is 250nm.This transistor is in grid bias 10V, and switch current ratio is greater than 10
4, maximum current surpasses 0.2mA.
Embodiment three:
The ultrasonic cleaning square resistance is the ito glass of 15 Ω in the alkalescent cleaning agent, and with twice of deionized water ultrasonic irrigation and oven dry, wherein the thickness of ITO is 150nm then.Ito thin film is carried out photoetching, forms one group of source electrode and drain electrode with the meshing parallel lines of comb shape, the figure that photoetching forms as shown in Figure 4, channel length is 50 μ m, channel width is 81mm, channel width-over-length ratio is 1620.It is 5 * 10 that the ito glass of photoetching formation figure is placed pressure
-4In the vacuum coating chamber of Pa, utilize thermal evaporation method in that the evaporation pentacene thin film is as organic semiconductor layer on the substrate of existing ITO source-drain electrode, evaporation speed is 0.03nm/s, and film thickness is 150nm.After the intact pentacene of evaporation, continue evaporation Teflon film as organic insulator, evaporation speed is 0.02nm/s, film thickness is 500nm.Last evaporated metal layer is served as grid, and metal level is made up of Au and Ag successively, and the evaporation speed of Au electrode is 0.3nm/s, and thickness is 50nm, and the evaporation speed of Ag electrode is 1.0nm/s, and film thickness is 250nm.This transistor is in grid bias 10V, and switch current ratio is greater than 10
5, maximum current surpasses 0.2mA.
Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description, should be appreciated that under the guiding of the present invention's design, those skilled in the art can carry out various modifications and improvement, and claims have been summarized scope of the present invention.
Claims (8)
1. organic film FET, this device comprises and is positioned at on-chip source electrode and drain electrode, and be positioned at source electrode, drain electrode and on-chip organic semiconductor layer, organic insulator and grid successively, it is characterized in that: source electrode and drain electrode are one group of parallel lines with the meshing shape of comb shape.
2. organic film FET as claimed in claim 1 is characterized in that, described organic insulation layer material is to use the method for evaporation to prepare.
3. organic film FET as claimed in claim 1 or 2 is characterized in that, described organic insulation layer material is polytetrafluoroethylene or polyimides.
4. organic film FET as claimed in claim 1 is characterized in that, described source electrode and drain material are tin indium oxide, zinc oxide or zinc tin oxide.
5. organic film FET as claimed in claim 1 is characterized in that, described organic semiconductor layer material is phthalocyanines metallo-organic compound, Oligopoly thiophene compounds or pentacene.
6. organic film FET as claimed in claim 1 is characterized in that described grid material is followed successively by gold, silver.
7. method for preparing the described organic film FET of claim 1, this method may further comprise the steps:
(1) ultrasonic cleaning conductive substrate in cleaning agent with deionized water ultrasonic irrigation and oven dry, wherein has one deck conducting film then above the conductive substrate;
(2) conducting film on the conductive substrate behind the above-mentioned cleaning, drying is carried out photoetching, form one group of source electrode and drain electrode with the meshing shape parallel lines of comb shape;
(3) on the conductive substrate of above-mentioned photoetching formation figure, continue the evaporation organic semiconductor layer;
(4) on above-mentioned organic semiconductor layer, continue the evaporation organic insulator;
(5) on above-mentioned organic insulator, continue the grid of evaporated metal layer as device.
8. the preparation method of organic film FET as claimed in claim 7 is characterized in that, wherein said conductive substrate is an indium oxide tin glass.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011346760A CN1157807C (en) | 2001-11-09 | 2001-11-09 | Organic film FET and its manufacture |
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|---|---|---|---|
| CNB011346760A CN1157807C (en) | 2001-11-09 | 2001-11-09 | Organic film FET and its manufacture |
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| Publication Number | Publication Date |
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| CN1348222A CN1348222A (en) | 2002-05-08 |
| CN1157807C true CN1157807C (en) | 2004-07-14 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2204861A1 (en) | 2001-12-19 | 2010-07-07 | Merck Patent GmbH | Organic field effect transistor with an organic dielectric |
| GB0130321D0 (en) * | 2001-12-19 | 2002-02-06 | Avecia Ltd | Electronic devices |
| EP1367659B1 (en) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
| US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
| US7511421B2 (en) * | 2003-08-25 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Mixed metal and organic electrode for organic device |
| EP1648040B1 (en) * | 2004-08-31 | 2016-06-01 | Osaka University | Thin-layer chemical transistors and their manufacture |
| FR2945669B1 (en) * | 2009-05-14 | 2011-12-30 | Commissariat Energie Atomique | ORGANIC FIELD EFFECT TRANSISTOR |
| CN107464880B (en) * | 2016-06-02 | 2020-04-14 | 清华大学 | Preparation method and preparation device of organic thin film transistor |
| CN109980116B (en) * | 2017-12-27 | 2020-11-17 | Tcl科技集团股份有限公司 | Field effect transistor and preparation method thereof |
| CN111416040B (en) * | 2020-03-11 | 2023-11-14 | 深圳大学 | Bipolar thin film transistor and preparation method thereof |
| CN116546824A (en) * | 2022-05-07 | 2023-08-04 | 浙江大学 | Organic field effect transistor and preparation method thereof |
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2001
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