CN205692679U - On-chip spiral transformer apparatus structure - Google Patents
On-chip spiral transformer apparatus structure Download PDFInfo
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- CN205692679U CN205692679U CN201620424331.2U CN201620424331U CN205692679U CN 205692679 U CN205692679 U CN 205692679U CN 201620424331 U CN201620424331 U CN 201620424331U CN 205692679 U CN205692679 U CN 205692679U
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Abstract
This utility model provides a kind of on-chip spiral transformer apparatus structure, described device is formed in parallel by several device cell bodies, it is characterized in that: described device cell body includes substrate, insulating oxide, the first metal layer, silicon dioxide layer, first wiring holes, second metal level, polyimides, 3rd metal level and the second wiring holes, second metal level has three, middle and right side the second metal level is connected with the first metal layer by the first wiring holes, 3rd metal level has three, 3rd metal level on left side and right side passes through second wiring holes the second metal level respectively with left side and right side and is connected, for drawing secondary coil, the 3rd middle metal level is used for drawing primary coil.The octagon on-chip spiral transformator that the utility model proposes, device architecture novelty and superior performance, use Al Si Cu as wire coil, not only can be compatible with conventional cmos production line, and the precision of metal live width control is higher, reduces the difficulty of processing technology, reduces cost of manufacture simultaneously.
Description
Technical field
This utility model relates to on-chip spiral transformer apparatus structure, especially a kind of octagon and using Al-Si-Cu as
The on-chip spiral transformator of wire coil.
Background technology
Along with market is to radio communication, RF identification, mobile TV and other electronic equipment for consumption and the demand of system
Increasing, the miniaturization of electronic equipment, high-performance, low cost, low-power consumption are required more and more higher, therefore SOC(system on a chip)
(SOC, System On a Chip) excites the great interest of people.On-chip spiral transformator can be capable of in a big way
Some inductance value and the preferable coefficient of coup, and the matching performance having had.
On-chip spiral transformator is made up of two or more on-chip spiral inductors, and its basic function is by primary coil
Alternating current be coupled in secondary coil by electromagnetic induction and the biggest power attenuation will not be introduced.Energy transmission same
Time, the impedance of primary coil and secondary coil also can change, i.e. the voltage and current ratio of coil different port becomes
Change.
On-chip spiral transformator is from the point of view of the geometry of coil at present, and it can be divided into tetragon, hexagon etc., typically
In the case of, the limit number of transformator is the most, bent angle closer to 180 degree, signal by time be lost the fewest, its performance is the best, simultaneously its
Resonant frequency is higher, series resistance is less, but from the point of view of the angle of technique and structure, the limit number of transformator is the most, it is achieved rise
Come the most difficult.
Summary of the invention
The purpose of this utility model is to overcome the shortcoming of prior art, it is provided that a kind of octagonal on-chip spiral transformator
Device architecture, this kind of transformer device structure novelty, and performance is good；It addition, use ripe CMOS technology line to manufacture, and use Al-
Si-Cu replacement gold can be compatible with CMOS fabrication line as wire coil, and the control accuracy height that coil-bar is wide.
For realizing above technical purpose, the technical solution adopted in the utility model is: a kind of on-chip spiral transformer apparatus
Structure, including device cell body, described transformer apparatus is formed in parallel by several device cell bodies, it is characterised in that: described
Device cell body includes substrate, insulating oxide, the first metal layer, silicon dioxide layer, the first wiring holes, the second metal level, gathers
Acid imide, the 3rd metal level and the second wiring holes, described insulating oxide is positioned on substrate and adjacent, and described the first metal layer covers
Covering on insulating oxide, described silicon dioxide layer covers on oxide layer and the first metal layer surface, and described first wiring holes has
Two, being respectively provided with on the first metal layer, described second metal level has 3, and second metal level in described left side covers at dioxy
On SiClx layer, second metal level on described centre and right side is filled in two the first wiring holes, and described polyimides covers
Silicon dioxide layer and the second layer on surface of metal, described second wiring holes has two, be separately positioned on left side the second metal level and
On second metal level on right side, the 3rd described metal level has three, and the 3rd metal level on described left side and right side is filled in the
In two wiring holes, being used for drawing secondary coil, the 3rd metal level of described centre covers on polyimide, is used for drawing primary
Coil.
Further, the thickness of described insulating oxide is between 100nm ~ 1000nm.
Further, described the first metal layer for being followed successively by Ti/Tin/Al-Si-Cu, the thickness of described TI is 40 ±
4nm, the thickness of described TIN is 60 ± 6nm, and the thickness of described Al-Si-Cu is 450 ± 45nm.
Further, described second metal level is Al-Si-Cu, and the thickness of described Al-Si-Cu is 1100 ± 110nm.
Further, described and the 3rd metal level is Al-Si-Cu, and the thickness of described Al-Si-Cu is 1 ~ 4um.
Further, the thickness of described silicon dioxide layer is 1200nm ± 120nm.
Further, the thickness of described polyimides is 3 ~ 20um.
From the above, it can be seen that the beneficial effects of the utility model are: the defect existed for prior art, this
Utility model provides a kind of octagonal on-chip spiral transformer apparatus structure, and this device architecture is novel, damage when signal passes through
Consumption is few, and device performance is good, and its resonant frequency is higher simultaneously, series resistance is less；It addition, use Al-Si-Cu to replace gold conduct
Wire coil can be compatible with CMOS fabrication line, and the control accuracy height that coil-bar is wide.
Accompanying drawing explanation
Fig. 1 is the top view of on-chip spiral transformer apparatus of the present utility model.
Fig. 2 is the structure chart of the coil extraction of on-chip spiral transformer apparatus of the present utility model.
Fig. 3 is the cross-sectional view of this device cell body of the present utility model.
Accompanying drawing illustrate: 1-substrate, 2-insulating oxide, 3-the first metal layer, 4-silicon dioxide layer, 5-the first wiring holes,
6-the second metal level, 7-polyimides, 8-the 3rd metal level, 9-the second wiring holes.
Detailed description of the invention
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
With reference to the accompanying drawings shown in 1 and Fig. 2, for the top view of this utility model octagonal on-chip spiral transformator, device wire
Circle center PAD and coil periphery PAD district are primary coil exit, and device edge PAD district is secondary coil exit.
A kind of on-chip spiral transformer apparatus structure that this utility model is proposed, including device cell body, such as accompanying drawing 3 institute
Showing, described transformer apparatus is formed in parallel by several device cell bodies, it is characterised in that: described device cell body includes substrate
1, insulating oxide 2, the first metal layer 3, silicon dioxide layer the 4, first wiring holes the 5, second metal level 6, polyimides the 7, the 3rd
Metal level 8 and the second wiring holes 9, described insulating oxide 2 is positioned on substrate 1 and adjacent, and described the first metal layer 3 covers absolutely
In edge oxide layer 2, described silicon dioxide layer 4 covers on oxide layer 2 and the first metal layer 3 surface, and described first wiring holes 5 has two
Individual, it is arranged on the first metal layer 3, described second metal level 6 has 3, and second metal level 6 in described left side covers at dioxy
On SiClx layer 4, second metal level 6 on described centre and right side is filled in two the first wiring holes 5, and described polyimides 7 covers
Covering on silicon dioxide layer 4 and the second metal level 6 surface, described second wiring holes 9 has two, is separately positioned on second gold medal in left side
Belonging on second metal level 6 on layer 6 and right side, the 3rd described metal level 8 has three, described left side and the 3rd metal level on right side
8 are filled in the second wiring holes 9, are used for drawing secondary coil, and the 3rd metal level 8 of described centre covers on polyimides 7,
For drawing primary coil.
The thickness of described insulating oxide 2 is between 100nm ~ 1000nm.
Described the first metal layer 3 is for being followed successively by Ti/Tin/Al-Si-Cu, and the thickness of described TI is 40 ± 4nm, described
The thickness of TIN is 60 ± 6nm, and the thickness of described Al-Si-Cu is 450 ± 45nm.
Described second metal level 6 is Al-Si-Cu, and the thickness of described Al-Si-Cu is 1100 ± 110nm.
Described and the 3rd metal level 8 is Al-Si-Cu, and the thickness of described Al-Si-Cu is 1 ~ 4um.
The thickness of described silicon dioxide layer 4 is 1200nm ± 120nm.
The thickness of described polyimides 7 is 3 ~ 20um.
Owing to being octagonal on-chip spiral transformator, processing technology is more complicated and the bad control of Line-width precision, uses Al-
Si-Cu replaces golden as wire coil, not only can be compatible with conventional CMOS fabrication line, and the precision that metal live width controls is relatively
Height, on the basis of improving device performance, reduces the difficulty of processing technology, reduces the cost of making simultaneously.
Being described this utility model and embodiment thereof above, this description does not has restricted, shown in accompanying drawing
Also being one of embodiment of the present utility model, actual structure is not limited thereto.If generally speaking this area is general
Logical technical staff is enlightened by it, in the case of creating objective without departing from this utility model, designing without creative and being somebody's turn to do
Frame mode that technical scheme is similar and embodiment, all should belong to protection scope of the present invention.
Claims (7)
1. an on-chip spiral transformer apparatus structure, including device cell body, described transformer apparatus is by several device lists
Unit's body is formed in parallel, it is characterised in that: described device cell body includes substrate (1), insulating oxide (2), the first metal layer
(3), silicon dioxide layer (4), the first wiring holes (5), the second metal level (6), polyimides (7), the 3rd metal level (8) and second
Wiring holes (9), it is upper and adjacent that described insulating oxide (2) is positioned at substrate (1), and described the first metal layer (3) covers at insulation oxygen
Changing on layer (2), described silicon dioxide layer (4) covers on insulating oxide (2) and the first metal layer (3) surface, and described first even
String holes (5) has two, is arranged on the first metal layer (3), and described second metal level (6) has three, the second of described left side
Metal level (6) covers on silicon dioxide layer (4), and second metal level (6) on described centre and right side is filled in two first even
In string holes (5), described polyimides (7) covers at silicon dioxide layer (4) and the second metal level (6) surface, described second line
Hole (9) has two, is separately positioned on second metal level (6) in left side and second metal level (6) on right side, the 3rd described gold medal
Belonging to layer (8) and have three, the 3rd metal level (8) on described left side and right side is filled in the second wiring holes (9), is used for drawing secondary
Coil, the 3rd metal level (8) of described centre covers on polyimides (7), is used for drawing primary coil.
A kind of on-chip spiral transformer apparatus structure the most according to claim 1, it is characterised in that: described insulating oxide
(2) thickness is between 100nm ~ 1000nm.
A kind of on-chip spiral transformer apparatus structure the most according to claim 1, it is characterised in that: described the first metal layer
(3) for being followed successively by Ti/Tin/Al-Si-Cu, the thickness of described TI is 40 ± 4nm, and the thickness of described TIN is 60 ± 6nm,
The thickness of described Al-Si-Cu is 450 ± 45nm.
A kind of on-chip spiral transformer apparatus structure the most according to claim 1, it is characterised in that: described second metal level
(6) being Al-Si-Cu, the thickness of described Al-Si-Cu is 1100 ± 110nm.
A kind of on-chip spiral transformer apparatus structure the most according to claim 1, it is characterised in that: described and the 3rd metal
Layer (8) is Al-Si-Cu, and the thickness of described Al-Si-Cu is 1 ~ 4um.
A kind of on-chip spiral transformer apparatus structure the most according to claim 1, it is characterised in that: described silicon dioxide layer
(4) thickness is 1200nm ± 120nm.
A kind of on-chip spiral transformer apparatus structure the most according to claim 1, it is characterised in that: described polyimides
(7) thickness is 3 ~ 20um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620424331.2U CN205692679U (en) | 2016-05-11 | 2016-05-11 | On-chip spiral transformer apparatus structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620424331.2U CN205692679U (en) | 2016-05-11 | 2016-05-11 | On-chip spiral transformer apparatus structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205692679U true CN205692679U (en) | 2016-11-16 |
Family
ID=57261747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620424331.2U Active CN205692679U (en) | 2016-05-11 | 2016-05-11 | On-chip spiral transformer apparatus structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205692679U (en) |
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2016
- 2016-05-11 CN CN201620424331.2U patent/CN205692679U/en active Active
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