CN102157488B - Integrated laminated transformer based on two layers of metal - Google Patents
Integrated laminated transformer based on two layers of metal Download PDFInfo
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- CN102157488B CN102157488B CN2011100007153A CN201110000715A CN102157488B CN 102157488 B CN102157488 B CN 102157488B CN 2011100007153 A CN2011100007153 A CN 2011100007153A CN 201110000715 A CN201110000715 A CN 201110000715A CN 102157488 B CN102157488 B CN 102157488B
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- secondary coil
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- depressor
- coil
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Abstract
The invention discloses an integrated laminated transformer based on two layers of metal, consisting of a substrate, a plurality of layers of mediums, a secondary coil and a primary coil, wherein the mediums are arranged on the substrate, and the secondary coil and the primary coil are arranged in the mediums; an upper plane of the first layer of medium, sequentially in the plurality of layers of mediums from the bottom up, is provided with two mutually isolated turns of secondary coil connected in parallel around the axial center, and one sides of parallel connection parts of the two turns of secondary coil are provided with opening grooves; an upper plane of the second layer of medium is provided with six mutually isolated turns of primary coil connected in series around the axial center; each two joint leading-out lines of the secondary coil and the primary coil are arranged side by side to separate off and lead out the opening grooves on one side of the secondary coil, wherein the each two joint leading-out lines are arranged in the same layer with the secondary coil, and the two joint leading-out lines of the primary coil are arranged between the two joint leading-out lines of the secondary coil. The integrated laminated transformer based on two layers of metal, disclosed by the invention, has the advantages of few occupied layers of metal, saved cost, high magnetic induction coefficient, strong coupling degree of signals, large bandwidth and wide application.
Description
Technical field
The invention belongs to the radio frequency analog technical field of integrated circuits.Relate to a kind of transformer, more particularly, relate to a kind of integrated layer depressor that dissolves, be mainly used in the wideband low noise amplifier or frequency mixer of radio-frequency receiver front-end, radiofrequency signal is carried out unsteady flow or transformation based on double layer of metal.
Background technology
The dissolve characteristics of depressor of integrated layer are that the magnetic induction coefficient is high, therefore are usually used in wideband low noise amplifier or the frequency mixer of radio-frequency receiver front-end as single-ended-differential signal transducer (Balun).But existing traditional integrated layer dissolves depressor owing to have technical defective and deficiency, and brings range of application to receive certain restriction.At first; Dissolve design and the manufacturing of depressor of traditional integrated layer needs could realize with three-layer metal; Wherein primary and secondary coil respectively takies layer of metal; And at least one in primary and secondary coil two joint lead-out wires separately need be placed on the three-layer metal, to avoid the intersection of lead-out wire.Secondly, relatively low turn ratio has limited it and in the radio frequency analog integrated circuit, can only use as Balun, and can not carry out unsteady flow or transformation (otherwise can reduce gain and worsen noise) as impedance matching device or signal feedback device.If thereby the number of turn that increases the number of turn of any coil or reduce another coil improves turn ratio, then the magnetic induction coefficient can correspondingly reduce.The 3rd, the integrated layer depressor that dissolves is used for Voltage Feedback more in negative feedback amplifier, be inappropriate for current feedback, and this is the noiseproof feature that the many irrational characteristic of the depressor because integrated layer dissolves can step-down amplifier.Therefore, receive certain restriction based on the dissolve range of application of depressor of the integrated layer of three-layer metal.
A kind of integrated layer based on double layer of metal of the present invention depressor that dissolves does not still have the document introduction of being correlated with at present, does not also search relevant patent document.
Summary of the invention
The objective of the invention is in order to overcome traditional integrated layer existing above three defectives of depressor that dissolve, a kind of integrated layer based on double layer of metal depressor that dissolves is provided.
For realizing above-mentioned purpose, the technical scheme that technical solution problem of the present invention is taked is:
A kind of integrated layer based on double layer of metal depressor that dissolves by substrate 1, is arranged in the several layers medium 2 on the substrate 1 and places the secondary coil 3 of medium 2 and primary coil 4 to form.Wherein, said medium 2 from bottom to top successively the last plane of ground floor medium 2 be provided with the parallelly connected secondary coil 3 of 2 circles spaced apart from each other around the axle center, and sides at secondary coil 3 parallel connection place are provided with open slot; The last plane of second layer medium 2 is provided with 6 circle series primary coils 4 spaced apart from each other around the axle center; Said secondary coil 3 separates with layer with secondary coil 3 with primary coil 42 joint lead-out wires separately side by side draws the open slot that secondary coil 3 one sides are provided with, and 2 joint lead-out wires of primary coil 4
place 2 joint lead-out wires
centre of secondary coil 3.
Above-mentioned substrate 1 be in semiconductor or the glass any.
The above-mentioned secondary coil 3 and the material of primary coil 4 are metal micro-strip line.
The above-mentioned distance that separates is that 3 μ m are to coil width.
The internal diameter of above-mentioned secondary coil 3 is less than the internal diameter of primary coil 4, and the width of the microstrip line of structure secondary coil 3 is not less than the width of the microstrip line of structure primary coil 4.
A kind of integrated layer based on double layer of metal of the present invention depressor that dissolves has following advantage and beneficial effect with the prior art ratio:
1, the number of metal that depressor takies because a kind of integrated layer based on double layer of metal of the present invention dissolves is few, so can simplify technological process, saves cost;
2, the size of depressor is less relatively because a kind of integrated layer based on double layer of metal of the present invention dissolves, so save chip area;
3, the turn ratio of depressor is high because a kind of integrated layer based on double layer of metal of the present invention dissolves, so can realize high signal gain;
4, the magnetic induction coefficient of depressor is high because a kind of integrated layer based on double layer of metal of the present invention dissolves, so the degree of coupling of signal is strong, bandwidth is big;
5, the quality factor of depressor secondary coil are high because a kind of integrated layer based on double layer of metal of the present invention dissolves, so loss of signal is little, the noise of introducing is little;
6, a kind of integrated layer based on double layer of metal of the present invention depressor that dissolves is of many uses; Not only can use as Balun; Also can be used as impedance matching device or the signal feedback device carries out unsteady flow or transformation, be particluarly suitable for being used as in the negative feedback amplifier electric current-current feedback.
Description of drawings
Fig. 1 is an organigram of the present invention;
Fig. 2 is the generalized section of Figure 1A-A;
Among the figure: 1. substrate; 2. medium; 3. secondary coil; 4. primary coil;
is the joint lead-out wire of primary coil 4, and
is the joint lead-out wire of secondary coil 3.
Embodiment
In order to deepen to understanding of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is made further detailed description, this embodiment only is used to explain the present invention, does not constitute the regulation to protection range of the present invention.
As depicted in figs. 1 and 2, a kind of integrated layer based on double layer of metal depressor that dissolves by substrate 1, is arranged in 3 layers of medium 2 on the substrate 1 and places 2 circle time level coils 3 of medium 2 and 6 circle primary coils 4 to constitute.Wherein, said substrate 1 is the GaAs GaAs of 100 μ m, and the plane is provided with three layers of medium 2 on the substrate 1, and ground floor medium 2 is silicon nitride Si successively from top to bottom
3N
4, second layer medium 2 is silicon dioxide SiO
2, the 3rd layer of medium 2 is silicon nitride SiN.The dissolve primary coil 4 of depressor of integrated layer is positioned at the last plane of second layer medium 2; The foursquare microstrip line circle series connection of six circles spaced apart from each other by being provided with around the axle center constitutes, and its external diameter is 400 μ m, and the thickness of microstrip line is 1.2 μ m; Width is 10 μ m, and the spacing that microstrip line separates is 3 μ m.The dissolve secondary coil 3 of depressor of integrated layer is positioned at the last plane of ground floor medium 2, be made up of the foursquare microstrip line circle of the two circles spaced apart from each other parallel connection that is provided with around the axle center, and a side at coils from parallel connection of coils place is to be provided with open slot that the width of open slot is 72 μ m.The thickness of microstrip line is 1.0 μ m, and width is 20 μ m, and the spacing that microstrip line separates is 3 μ m.The internal diameter of secondary coil 3 is 204 μ m.Primary coil 4 is drawn the side that secondary coil 3 is provided with open slot with secondary coil 3 two joint lead-out wires separately by separating side by side with secondary coil 3 microstrip line of layer together, and two joint lead-out wires of primary coil 4
place between two joint lead-out wires
of secondary coil 3.The width of two joint lead-out wires of primary coil 4
is 10 μ m; The width of two joint lead-out wires of secondary coil 3
is 20 μ m, and the spacing that lead-out wire separates is 4 μ m.Wherein said microstrip line forms by the metallic copper accumulation.
It is 0.6 that present embodiment records the dissolve magnetic induction coefficient of depressor of integrated layer of the present invention through experiment, and its effective turn ratio is 16.This shows that the dissolve magnetic induction coefficient and the turn ratio of depressor of integrated layer of the present invention is all higher.
Claims (6)
1. the integrated layer based on double layer of metal depressor that dissolves is characterized in that: by substrate (1), be arranged in the several layers medium (2) on the substrate (1) and place the secondary coil (3) of medium (2) and primary coil (4) to constitute; Wherein, said medium (2) from bottom to top successively the last plane of ground floor medium (2) be provided with 2 circle parallelly connected secondary coils (3) spaced apart from each other around the axle center, and a side at secondary coil (3) parallel connection place is provided with open slot; The last plane of second layer medium (2) is provided with 6 circle series primary coils (4) spaced apart from each other around the axle center; 2 joint lead-out wires that said secondary coil (3) and primary coil (4) respectively have
and
and secondary coil (3) separate with layer side by side draws the open slot that secondary coil (3) one sides are provided with, and 2 joint lead-out wires of primary coil (4)
place in the middle of 2 joint lead-out wires
of secondary coil (3).
2. the integrated layer based on the double layer of metal according to claim 1 depressor that dissolves is characterized in that: described substrate (1) in semiconductor or the glass any.
3. the integrated layer based on the double layer of metal according to claim 1 depressor that dissolves, it is characterized in that: described medium (2) is 3 layers.
4. the integrated layer based on the double layer of metal according to claim 1 depressor that dissolves, it is characterized in that: the material of described secondary coil (3) and primary coil (4) is metal micro-strip line.
5. according to claim 1 or 4 described integrated layers based on the double layer of metal depressor that dissolves, it is characterized in that: the width of the microstrip line of described secondary coil (3) is not less than the width of the microstrip line of primary coil (4).
6. the integrated layer based on the double layer of metal according to claim 1 depressor that dissolves, it is characterized in that: the internal diameter of described secondary coil (3) is less than the internal diameter of primary coil (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100007153A CN102157488B (en) | 2011-01-05 | 2011-01-05 | Integrated laminated transformer based on two layers of metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100007153A CN102157488B (en) | 2011-01-05 | 2011-01-05 | Integrated laminated transformer based on two layers of metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157488A CN102157488A (en) | 2011-08-17 |
| CN102157488B true CN102157488B (en) | 2012-08-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011100007153A Expired - Fee Related CN102157488B (en) | 2011-01-05 | 2011-01-05 | Integrated laminated transformer based on two layers of metal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430131A (en) * | 2020-05-14 | 2020-07-17 | 锐石创芯（深圳）科技有限公司 | Integrated transformer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8552828B1 (en) * | 2012-09-07 | 2013-10-08 | Infineon Technologies Ag | System and method for a coreless transformer |
| CN105023739B (en) * | 2014-04-28 | 2017-05-24 | 瑞昱半导体股份有限公司 | Integrated transformer |
| CN104037158B (en) * | 2014-05-26 | 2016-08-24 | 江苏科技大学 | The integrated layer of a kind of symmetry dissolves depressor |
Citations (7)
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|---|---|---|---|---|
| CN1414635A (en) * | 2002-11-12 | 2003-04-30 | 威盛电子股份有限公司 | Double-layer symmetrical solid circuit transformer |
| CN1539150A (en) * | 2001-08-09 | 2004-10-20 | �ʼҷ����ֵ��ӹɷ�����˾ | Planar inductive component and planar transformer |
| CN1599978A (en) * | 2001-11-05 | 2005-03-23 | 阿特罗斯通信公司 | Integrated balun and transformer structure |
| CN101064271A (en) * | 2007-03-21 | 2007-10-31 | 威盛电子股份有限公司 | Screw inductive element having multiplex conductor structure |
| EP1855297A1 (en) * | 2006-05-08 | 2007-11-14 | Infineon Technologies Austria AG | Signal transformer and signal transmitting device with a signal transformer |
| CN101609833A (en) * | 2008-06-17 | 2009-12-23 | 恩益禧电子股份有限公司 | Circuit arrangement and manufacture method thereof |
| CN101840774A (en) * | 2009-03-18 | 2010-09-22 | 复旦大学 | Small-area transformer with on-chip laminated structure |
-
2011
- 2011-01-05 CN CN2011100007153A patent/CN102157488B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1539150A (en) * | 2001-08-09 | 2004-10-20 | �ʼҷ����ֵ��ӹɷ�����˾ | Planar inductive component and planar transformer |
| CN1599978A (en) * | 2001-11-05 | 2005-03-23 | 阿特罗斯通信公司 | Integrated balun and transformer structure |
| CN1414635A (en) * | 2002-11-12 | 2003-04-30 | 威盛电子股份有限公司 | Double-layer symmetrical solid circuit transformer |
| EP1855297A1 (en) * | 2006-05-08 | 2007-11-14 | Infineon Technologies Austria AG | Signal transformer and signal transmitting device with a signal transformer |
| CN101064271A (en) * | 2007-03-21 | 2007-10-31 | 威盛电子股份有限公司 | Screw inductive element having multiplex conductor structure |
| CN101609833A (en) * | 2008-06-17 | 2009-12-23 | 恩益禧电子股份有限公司 | Circuit arrangement and manufacture method thereof |
| CN101840774A (en) * | 2009-03-18 | 2010-09-22 | 复旦大学 | Small-area transformer with on-chip laminated structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430131A (en) * | 2020-05-14 | 2020-07-17 | 锐石创芯（深圳）科技有限公司 | Integrated transformer |
| CN111430131B (en) * | 2020-05-14 | 2021-07-23 | 锐石创芯（深圳）科技有限公司 | Integrated transformer |
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| Publication number | Publication date |
|---|---|
| CN102157488A (en) | 2011-08-17 |
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Address after: 212028 Zhenjiang, Dantu Metro Industrial Park Rui East Road, No. 9 Patentee after: Jiangsu University of Science and Technology Address before: 212003 Zhenjiang City, Jiangsu province dream Creek Road, No. 2 Patentee before: Jiangsu University of Science and Technology |
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Granted publication date: 20120815 Termination date: 20170105 |
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