CN205609515U - Reliability testing structure - Google Patents
Reliability testing structure Download PDFInfo
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- CN205609515U CN205609515U CN201620467514.2U CN201620467514U CN205609515U CN 205609515 U CN205609515 U CN 205609515U CN 201620467514 U CN201620467514 U CN 201620467514U CN 205609515 U CN205609515 U CN 205609515U
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- active area
- reliability testing
- testing structure
- conductive
- conductive plunger
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Abstract
The utility model provides a reliability testing structure, include: be provided with the substrate of active area and isolation structure, need cover the barrier layer on the isolation structure, formed at the conductive plunger at the both ends of active area and with the conducting layer of conductive plunger point connection, wherein active area, conductive plunger and conducting layer form the structure of establishing ties. When right the utility model discloses when resistance test is carried out to the structure of well reliability testing structure's series connection, can judge according to the size of the resistance value that detects out the situation of being connected of active area and conductive plunger to whether the affirmation has remained the barrier layer on the active area. Use simultaneously the utility model provides a reliability testing structure also can monitor the forming process on barrier layer unusually.
Description
Technical field
This utility model relates to technical field of manufacturing semiconductors, particularly to a kind of reliability testing structure.
Background technology
In the manufacturing process of integrated circuit, metal silicide need to be formed in the subregion of device, such as
The position that active area is connected with conductive plunger needs formation metal silicide to reduce contact resistance, and raising is led
Electrical property.But, the subregion of device can not form metal silicide, as high resistance polysilicon,
The regions such as isolation structure.Therefore, before making metal silicide, metal silicide should not necessarily formed
Formation barrier layer, region, the characteristic utilizing barrier layer will not react with metal, prevent from not necessarily forming
The region of metal silicide forms metal silicide.During forming barrier layer, need to be thicker with using
Photoresist, this results in in the case of distance between centers of tracks is less, and the bottom position in lines easily occurs
The problem of the barrier layer residual caused due to photoresist residual.If remaining barrier layer on active area, then
The conductive plunger being subsequently formed will be unable to and active region contact, thus affects the performance of device.
Practice finds, under the strict process conditions controlling photoetching, can substantially prevent the bottom of lines from sending out
Third contact of a total solar or lunar eclipse photoresist remains.And when the process conditions of photoetching occurs slight deviation, even at device parameter or
In the normal range of technological parameter during fluctuation, it is also possible to the position between bottom lines occurs that photoetching is residual
Stay.Along with constantly reducing of device size, in the processing procedure that need to use thicker photoresist, photoresist is residual
Stay and the problem of thin film residue is the most serious.And according to traditional defect inspection method, increasingly without
Method meets demand.Such as, utilize wafer detection equipment that wafer is detected, owing to being detected by wafer
The restriction of the accuracy of detection of equipment, cause described detection equipment there will be missing inspection or for less defect without
The problem of method detection.
Utility model content
The purpose of this utility model is to provide a kind of reliability testing structure, by described reliability testing
Structure can effectively detect for whether remaining barrier layer on active area, and can be to the formation on barrier layer
Cheng Jinhang abnormal monitoring.
At the reliability testing structure that this utility model provides, including substrate, barrier layer, at least two
Conductive plunger and conductive layer, described substrate is formed at least one active area and be positioned at each described in have
The isolation structure of source region periphery, described barrier layer is formed on described isolation structure, each described active area
Two ends be respectively formed with at least one described conductive plunger, described conductive layer is formed at described conductive plunger
Top, is positioned at the conductive layer that on same active area two ends, conductive plunger is different from two respectively and connects, so that
Described active area, conductive plunger and conductive layer form the structure of series connection.
Optionally, in described reliability testing structure, described substrate is formed with an active area, institute
State and on the two ends of active area, be respectively formed with a conductive plunger.
Optionally, in described reliability testing structure, described substrate is formed with multiple active area, often
A conductive plunger, adjacent four on two active areas respectively it are formed on the two ends of individual described active area
In conductive plunger, two conductive plungers being positioned on different active area are connected on same conductive layer.
Optionally, in described reliability testing structure, multiple described active areas arrange in the way of roundabout
Become a serpentine configuration.
Optionally, in described reliability testing structure, described serpentine configuration has multiple different roundabout
Spacing.
Optionally, in described reliability testing structure, described roundabout spacing is according to minimum design dimension
It is doubled and redoubled.
Optionally, in described reliability testing structure, multiple described active areas L-shaped, U-shaped of arrangement,
M type or W shape.
Optionally, in described reliability testing structure, described active area be shaped as bar shaped.
Optionally, in described reliability testing structure, the width of described active area sets more than or equal to minimum
Meter size.
Optionally, in described reliability testing structure, between described conductive plunger and described isolation structure
Away from more than or equal to minimum design dimension.
Compared with prior art, in the reliability testing structure that this utility model provides, described active area,
Conductive plunger and conductive layer form the chain structure of series connection, when this reliability testing structure is carried out resistance survey
During examination, the head and end in described chain structure applies voltage or electric current, then according to the correspondence detected
Current value or magnitude of voltage, the resistance value of this chain structure can be obtained, according to the resistance value detected
Size, can determine whether out the connection state of described active area and conductive plunger, thus can further infer that in institute
State and whether remain barrier layer on active area.Therefore, the reliability testing knot that this utility model provides is used
Structure, can carry out abnormal monitoring to the forming process on barrier layer.
Accompanying drawing explanation
Figure 1A is the top view of the reliability testing structure of this utility model embodiment one；
Figure 1B is the profile of the reliability testing structure of this utility model embodiment one；
Fig. 2 A is the top view of the reliability testing structure of this utility model embodiment two；
Fig. 2 B is the reliability testing structure profile along AA ' direction of this utility model embodiment two；
Fig. 3 A to Fig. 3 C be formed this utility model embodiment one reliability testing structure during cut open
Face structural representation.
Detailed description of the invention
As stated in the Background Art, in photo-etching technological process, usually affect institute's shape due to photoresist residual
The performance of the device become, meanwhile, along with constantly reducing of device size, traditional defect inspection method is also
Increasingly cannot meet demand.To this end, this utility model provides a kind of reliability testing structure, to solve
The insensitive problem of recall rate of defect, further it can also be used to the exception in photo-etching technological process is supervised
Control.
A kind of reliability testing structure that this utility model provides, for detecting in the forming process of barrier layer
Photoresist residual condition, including: substrate, barrier layer, at least two conductive plunger and conductive layer, institute
State the isolation structure being formed with at least one active area in substrate He being positioned at each described active area periphery, institute
Stating barrier layer to be formed on described isolation structure, the two ends of each described active area are respectively formed with at least one
Described conductive plunger, described conductive layer is formed at the top of described conductive plunger, is positioned at same active area two
Conductive layer that on end, conductive plunger is different from two respectively connects so that described active area, conductive plunger and
Conductive layer forms the structure of series connection.
In the reliability testing structure that this utility model provides, described active area, conductive plunger and conductive layer
For series connection structure, when this reliability testing structure is carried out resistance test, in the structure of described series connection
Head and end apply voltage or electric current, then according to the corresponding current value detected or magnitude of voltage, i.e.
The resistance value of the structure of this series connection can be obtained, depend on arrived resistance value and then can determine whether described active area and lead
The connection state of electric plug, thus can determine whether whether to remain barrier layer, Jin Erke on described active area
Infer in photo-etching technological process, if the problem that there are photoresist residual.That is, this practicality is used
The reliability testing structure of novel offer, can carry out abnormal monitoring to the forming process on barrier layer.
When the reliability testing structure using this utility model to provide detects, can be reliable according to reality
Property the test size of structure and concrete technology one specific resistance is set, then by the resistance value detected and rule
Lattice resistance is compared, if the resistance value detected is less than described specific resistance, then in this cascaded structure
Contacting between conductive plunger with active area is without exception, does not remain barrier layer on active area；If inspection
The resistance value measured be more than described specific resistance, then this cascaded structure exists at least one conductive plunger with
The problem connecting exception of active area, thus cause resistance to increase.
Below in conjunction with the drawings and specific embodiments, the reliability testing structure that the utility model proposes is made into one
Step describes in detail.According to following explanation and claims, advantage of the present utility model and feature will be more clear
Chu.It should be noted that, accompanying drawing all uses the form simplified very much and all uses non-ratio accurately, only uses
With purpose convenient, aid illustration this utility model embodiment lucidly.
Embodiment one
Figure 1A is the top view of the reliability testing structure of this utility model embodiment one, and Figure 1B is Figure 1A
The profile of the reliability testing structure of shown this utility model embodiment one.Such as Figure 1A and Figure 1B institute
Showing, the reliability testing structure that the present embodiment provides includes: substrate, barrier layer 120, at least two conduction
Connector 130 and conductive layer 140, be formed with an active area 111 and be positioned at described active in described substrate
The isolation structure 112 of district 111 periphery, described barrier layer 120 is formed on described isolation structure 112, institute
The two ends stating active area 111 are respectively formed with a described conductive plunger 130, and described conductive layer 140 is formed at
The top of described conductive plunger 130, two conductive plungers 130 in described active area 111 respectively with two
Different conductive layers 140 connects, and makes described active area 111, conductive plunger 130 and conductive layer 140 be formed
The structure of series connection.
In the present embodiment, described active area 111 and two conductive plungers 130 being positioned at active area 111 two ends
And two conductive layers 140 being connected with two conductive plungers 130 respectively are collectively forming the structure of a series connection,
Voltage or electric current is applied to test on said two conductive layer 140.Then can be according to test knot
Fruit judges the connection state of described active area 111 and conductive plunger 130, and then it can be inferred that described barrier layer
The situation of the 120 photoresist residuals in forming process.
In the present embodiment, described substrate is formed with an active area 111, wherein, described active area 111
Be shaped as bar shaped, its cross section can be rectangle.Described isolation structure 112 around described active area 111,
Its cross section is rectangular ring.The width D of described active area 111 is more than or equal to minimum design dimension, institute
State the conductive plunger 130 minimum spacing S with described isolation structure 112 more than or equal to minimum design dimension.
Due to when the interval S of the width D of described active area 111 and described conductive plunger 130 with isolation structure 112
More hour, then the highest to the technological requirement being subsequently formed barrier layer 120, therefore, if described reliability
The design size of test structure all uses minimum design dimension, then can make the scope in process capability requirement
In, improve the sensitivity to the abnormal monitoring forming barrier layer.Thus when forming barrier layer, even if work
Small deviation occurs, it is possible to be embodied in described reliability testing structure during skill, and can be by electricity
Resistance test detects exception, and then can pinpoint the problems in time, it is to avoid abnormal extension.
Wherein, the material for example, silicon dioxide on described barrier layer 120 or silicon nitride, described connector 130
Material for example, tungsten (W), the material such as copper (Cu) of described conductive layer 140 or aluminum (Al).
Below in conjunction with Fig. 3 A to Fig. 3 C, the forming method of the reliability testing structure that the present embodiment provides is entered
One step describes in detail.Fig. 3 A to Fig. 3 C is the reliability testing structure forming this utility model embodiment one
Step schematic diagram, wherein, Fig. 3 A to Fig. 3 C is along being perpendicular to the length side of active area in Figure 1A
To generalized section.
First, with reference to shown in Fig. 3 A, it is provided that a substrate, described substrate is formed source region 111 and every
From structure 112, the surface of described isolation structure 112 is the region that need to be formed with barrier layer.
Then, with reference to shown in Fig. 3 B, on described substrate, barrier layer 120 is deposited, and in described barrier layer
Spin coating photoresist 300 on 120.Wherein, described barrier layer 120 for example, blocking layer of metal silicide.In
In semiconductor fabrication, metal silicide be formed by that metal can react with silicon this is special
Property and realize.And generally in being not required to be formed the region of metal silicide, it is all covered with a metal silicide
Barrier layer, in case terminating in the region being not required to form metal silicide to form metal silicide.Described being formed
In the photo-etching technological process of blocking layer of metal silicide, the thickness of the photoresist of required use is thicker, such as
It is more than
Then, photoetching and etch process are performed.Owing to the thickness of photoresist 300 is thicker, and described in have
The width of source region 111 is less.Therefore, when performing photoetching process, need to strictly control the condition of photoetching process,
Otherwise, when photoetching process occurs small deviation, the photoresist being positioned on active area 111 may all be caused
300 problems that cannot remove completely, as shown in Figure 3 C, owing to photoresist remains, and then cause being positioned at and have
Barrier layer 120 in source region 111 also cannot be removed after etch process completely.
Finally, on described active area 111, conductive plunger 130 and conductive layer 140 are sequentially formed.When
Formed and occur during barrier layer abnormal and cause photoresist to remain, and further result in and be positioned at active area
On metal silicide stop when cannot remove completely, then certainly will result in follow-up formed conductive plunger,
Electrically connecting appearance with active area abnormal, the area such as connected is too small or cannot be connected with active area.
Visible, when the reliability testing structure formed above is tested, according to the result of test
I.e. can determine whether the connection state of described active area and conductive plunger, and then deducibility is in the mistake forming barrier layer
Whether journey exists exception.
Embodiment two
Fig. 2 A is the schematic diagram of the reliability testing structure of this utility model embodiment two, and Fig. 2 B is this reality
With the reliability testing structure of new embodiment two along the profile in AA ' direction.Such as Fig. 2 A and Fig. 2 B institute
Showing, in the present embodiment, described reliability testing structure includes: substrate, barrier layer 220, conductive plunger
230, conductive layer 240, are formed with multiple active area 211 and isolation structure 212, institute in described substrate
Stating barrier layer 220 to be formed on isolation structure 212, the two ends of each active area 211 are respectively formed with one
Described conductive plunger 230, described conductive layer 140 is formed at the top of described conductive plunger 230.This enforcement
In example, in adjacent four conductive plungers 230 on two active areas 211, wherein it is positioned at different active
Two conductive plungers 230 in district 211 are connected on same conductive layer 240, make described active area 211,
Conductive plunger 230 and conductive layer 240 form the chain structure of series connection.
In the present embodiment, described active area, conductive plunger and conductive layer are the chain structure of series connection, when right
When described reliability testing structure carries out resistance test, the head and end in described chain structure applies voltage
Or electric current, then according to the corresponding current value detected or magnitude of voltage, the structure of this series connection can be obtained
Resistance value, depend on to resistance value so that the described active area that can determine whether in described chain structure with lead
The connection state of electric plug, thus can determine whether whether remain barrier layer on described active area.I.e. use
The reliability testing structure that this utility model provides, can carry out abnormal monitoring to the forming process on barrier layer.
Described active area 211 can carry out arranging to form a linear structure, such as with L with arbitrary shape
The linear mode of type, U-shaped, M type or W shape carries out arranging or be arranged in the way of roundabout a snakelike knot
Structure.In the present embodiment, each active area 211 is list structure, and multiple described active areas are with roundabout
Mode is arranged in a serpentine configuration.Concrete, described active area 211 is arranged with different roundabout spacing
Row, the most described serpentine configuration has multiple different roundabout spacing.It is also preferred that the left described roundabout spacing can root
Being doubled and redoubled according to minimum design dimension, as shown in Figure 2 A, in the present embodiment, described active area 211 is with 5
Individual different roundabout spacing arranges, and described roundabout spacing is respectively equal to: minimum design dimension W1, and 2
Minimum design dimension W2 again, minimum design dimension W3 of 3 times, minimum design dimension W4 of 4 times,
And minimum design dimension W5 of 5 times.
In the reliability testing structure of the present embodiment, described active area 211 uses different roundabout spacing to arrange
Row, define the arrangement mode that closeness is different, and the width on follow-up formed barrier layer is the most different.
Owing to, in photo-etching technological process, depth of focus when being exposed close quarters and Evacuation area is different,
Cause exposure degree of accuracy different, therefore in the photoetching process being subsequently formed barrier layer, close quarters and dredging
The resolution dissipating the barrier layer that region is formed is different, thus can find out under current conditions of exposure, institute
State the lithographic process window of the width on barrier layer.
Foregoing description is only the description to this utility model preferred embodiment, not to this utility model scope
Any restriction, any change that the those of ordinary skill in this utility model field does according to the disclosure above content
More, modify, belong to the protection domain of claims.
Claims (10)
1. a reliability testing structure, for monitoring the photoresist residual in the forming process of barrier layer
Situation, it is characterised in that including: substrate, barrier layer, conductive layer and at least two conductive plunger,
Described substrate is formed at least one active area and is positioned at the isolation junction of each described active area periphery
Structure, described barrier layer is formed on described isolation structure, and the two ends of each described active area are respectively formed
At least one described conductive plunger, described conductive layer is formed at the top of described conductive plunger, is positioned at same
The conductive layer that on one active area two ends, conductive plunger is different from two respectively connects, so that described active area,
Conductive plunger and conductive layer form the structure of series connection.
2. reliability testing structure as claimed in claim 1, it is characterised in that: shape in described substrate
Cheng Youyi active area, the two ends of described active area are respectively formed a conductive plunger.
3. reliability testing structure as claimed in claim 1, it is characterised in that: shape in described substrate
Become to have multiple active area, the two ends of each described active area are respectively formed a conductive plunger, adjacent
Two active areas on four conductive plungers in, two conductive plungers being positioned on different active area are even
It is connected on same conductive layer.
4. reliability testing structure as claimed in claim 3, it is characterised in that: multiple described active
District is arranged in a serpentine configuration in the way of roundabout.
5. reliability testing structure as claimed in claim 4, it is characterised in that: described serpentine configuration
There is multiple different roundabout spacing.
6. reliability testing structure as claimed in claim 5, it is characterised in that: described roundabout spacing
For being doubled and redoubled according to minimum design dimension.
7. reliability testing structure as claimed in claim 3, it is characterised in that: multiple described active
District arranges L-shaped, U-shaped, M type or W shape.
8. reliability testing structure as claimed in claim 1, it is characterised in that: described active area
It is shaped as bar shaped.
9. reliability testing structure as claimed in claim 8, it is characterised in that: described active area
Width is more than or equal to minimum design dimension.
10. reliability testing structure as claimed in claim 1, it is characterised in that: described conduction is inserted
Plug is more than or equal to minimum design dimension with the spacing of described isolation structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620467514.2U CN205609515U (en) | 2016-05-20 | 2016-05-20 | Reliability testing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620467514.2U CN205609515U (en) | 2016-05-20 | 2016-05-20 | Reliability testing structure |
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| Publication Number | Publication Date |
|---|---|
| CN205609515U true CN205609515U (en) | 2016-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620467514.2U Expired - Fee Related CN205609515U (en) | 2016-05-20 | 2016-05-20 | Reliability testing structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022048249A1 (en) * | 2020-09-04 | 2022-03-10 | 长鑫存储技术有限公司 | Semiconductor structure |
| US11961774B2 (en) | 2020-09-04 | 2024-04-16 | Changxin Memory Technologies, Inc. | Semiconductor device and method for manufacturing same |
-
2016
- 2016-05-20 CN CN201620467514.2U patent/CN205609515U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022048249A1 (en) * | 2020-09-04 | 2022-03-10 | 长鑫存储技术有限公司 | Semiconductor structure |
| US11961774B2 (en) | 2020-09-04 | 2024-04-16 | Changxin Memory Technologies, Inc. | Semiconductor device and method for manufacturing same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160928 Termination date: 20190520 |
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| CF01 | Termination of patent right due to non-payment of annual fee |