CN205542750U - Semiconductor chip - Google Patents
Semiconductor chip Download PDFInfo
- Publication number
- CN205542750U CN205542750U CN201620358491.1U CN201620358491U CN205542750U CN 205542750 U CN205542750 U CN 205542750U CN 201620358491 U CN201620358491 U CN 201620358491U CN 205542750 U CN205542750 U CN 205542750U
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- CN
- China
- Prior art keywords
- layer
- utmost point
- semiconductor chip
- pole
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model belongs to a chip field is directed against the semiconductor chip that current semiconductor chip refrigerates and the generating efficiency is low and provide, including PN utmost point elementary layer, PN utmost point elementary layer includes the P utmost point and the N utmost point, and the P utmost point is extremely connected through bonding conductor with N and is formed a subelement, installs the base plate in the at least one end of the last lower extreme of PN utmost point elementary layer, and this base plate is formed by insulating layer and heat conduction materials compound, and the insulating layer is enamel material or aluminium porcelain matter anodic oxidation membrane, the insulating layer of base plate towards PN extremely the elementary layer install, heat conduction material adoption metal material is made. Preferred aluminium saw lumber matter of metal heat -conducting layer or copper material. The utility model discloses simple structure, ingenious at set up the enamel material between metal heat -conducting layer and the PN utmost point layer or aluminium porcelain matter anodic oxidation membrane insulate, the metal heat conduction material is adopted with the heat -conducting layer to the realization to improved the refrigeration and the generating efficiency of product greatly, the practicality is strong.
Description
Technical field
This utility model belongs to a kind of semiconductor chip field, particularly relates to a kind of semiconductor refrigerating
With thermo-electric generation chip.
Background technology
Existing semiconductor chip is all to use ceramic material heat conduction, and those skilled in the art are
Know that ceramic material heat-conducting effect is poor, but due to surface and the PN pole layer of semiconductor chip
Between must insulate, so ceramic cannot be replaced in industry other heat-conducting effect always
Good insulant, in causing industry, semiconductor chip weak heat-dissipating is always indeterminable difficulty
Topic, thus affect chip refrigeration and generating efficiency.
Utility model content
This utility model purpose causes because conduction of heat is bad for existing semiconductor chip
A kind of semiconductor core improving refrigeration and generating efficiency that refrigeration is low with generating efficiency and provides
Sheet.
This utility model is achieved by the following technical solution:
A kind of semiconductor chip, including PN pole unit layer, PN pole unit layer includes P pole and N
Pole, P pole and N pole connect one subelement of formation by connecting conductor, at PN pole unit layer
At least one end of upper and lower side substrate is installed, this substrate by insulating barrier and Heat Conduction Material compound and
Becoming, insulating barrier is enamel material or aluminum enamelled anodizing film, and the insulating barrier of substrate is towards PN
Pole unit layer is installed.
An outer surface of substrate installs radiator, leading of the described substrate installing radiator wherein
Hot material uses the heat-conducting layer that excellent heat conductivity material is made.
Described heat-conducting layer preferred aluminum material or copper material or phase change material.Phase change material sets
In the box body containing this phase change material, phase change material can be liquid, solid-state, it is also possible to for
Gas-liquid mixed.
The outer surface of described metal heat-conducting layer is provided with the reinforcement preventing metal heat-conducting layer from deforming.
The beneficial effects of the utility model: this utility model simple in construction, lead metal cleverly
Enamel material is set between thermosphere and PN pole layer or aluminum enamelled anodizing film insulate, real
Now heat-conducting layer is used metal heat-conducting material, thus substantially increases refrigeration and the generating effect of product
Rate, practical.
Accompanying drawing explanation
Fig. 1 is STRUCTURE DECOMPOSITION figure of the present utility model.
Detailed description of the invention
Below in conjunction with embodiment, the utility model is described in further detail.
Embodiment
As it is shown in figure 1, a kind of semiconductor chip, including PN pole unit layer, PN pole unit layer
Including pole 1, P pole 2 and N, pole 1, P pole 2 and N connects formation one by connecting conductor 5
Subelement, is provided with substrate at least one end of the upper and lower side of PN pole unit layer, this substrate by
Insulating barrier 4 and Heat Conduction Material 3 are composited, and insulating barrier is enamel material or aluminum porcelain anodic oxygen
Changing film, the insulating barrier of substrate is installed towards PN pole unit layer.Described Heat Conduction Material uses gold
Belong to material to make.Described metal heat-conducting layer preferred aluminum material or copper material.Described gold
The outer surface belonging to heat-conducting layer is provided with the reinforcement preventing metal heat-conducting layer from deforming.PN pole unit layer
Lower end can directly use pottery or other insulant.
Of the present utility model ultimate principle, principal character and this practicality are more than shown and described new
The advantage of type.Skilled person will appreciate that of the industry, this utility model is not by above-described embodiment
Restriction, principle of the present utility model is simply described described in above-described embodiment and description,
On the premise of without departing from this utility model spirit and scope, those ordinary skill in the art
Simple change and within replacing and being all protection domain of the present utility model.
Claims (4)
1. a semiconductor chip, including PN pole unit layer, PN pole unit layer includes P pole and N
Pole, P pole and N pole connect one subelement of formation by connecting conductor, it is characterised in that: at PN
At least one end of the upper and lower side of pole unit layer is provided with substrate, and this substrate is by insulating barrier and heat conduction material
Material is composited, and insulating barrier is enamel material or aluminum enamelled anodizing film, the insulating barrier of substrate
Install towards PN pole unit layer.
A kind of semiconductor chip the most according to claim 1, it is characterised in that: described
Heat Conduction Material uses metal material to make.
A kind of semiconductor chip the most according to claim 2, it is characterised in that: described
Metal heat-conducting layer preferred aluminum material or copper material or phase change material.
4. according to a kind of semiconductor chip described in Claims 2 or 3, it is characterised in that: described
The outer surface of metal heat-conducting layer be provided with the reinforcement preventing metal heat-conducting layer from deforming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620358491.1U CN205542750U (en) | 2016-04-23 | 2016-04-23 | Semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620358491.1U CN205542750U (en) | 2016-04-23 | 2016-04-23 | Semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205542750U true CN205542750U (en) | 2016-08-31 |
Family
ID=56797539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620358491.1U Expired - Fee Related CN205542750U (en) | 2016-04-23 | 2016-04-23 | Semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205542750U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108490577A (en) * | 2018-03-12 | 2018-09-04 | 广东欧珀移动通信有限公司 | Structured light projector, image acquiring device and electronic equipment |
| CN113565609A (en) * | 2021-07-20 | 2021-10-29 | 潍柴动力股份有限公司 | Tail gas energy recovery system |
-
2016
- 2016-04-23 CN CN201620358491.1U patent/CN205542750U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108490577A (en) * | 2018-03-12 | 2018-09-04 | 广东欧珀移动通信有限公司 | Structured light projector, image acquiring device and electronic equipment |
| CN113565609A (en) * | 2021-07-20 | 2021-10-29 | 潍柴动力股份有限公司 | Tail gas energy recovery system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160831 Termination date: 20210423 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |