CN205539734U - Device of joining long -pending adjustment is restrainted to high power semiconductor lasers ware linear array - Google Patents
Device of joining long -pending adjustment is restrainted to high power semiconductor lasers ware linear array Download PDFInfo
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- CN205539734U CN205539734U CN201620066767.9U CN201620066767U CN205539734U CN 205539734 U CN205539734 U CN 205539734U CN 201620066767 U CN201620066767 U CN 201620066767U CN 205539734 U CN205539734 U CN 205539734U
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Abstract
The utility model belongs to the field of the laser technology is used and discloses a device of joining long -pending adjustment is restrainted to high power semiconductor lasers ware linear array. The device contains fast axis collimation plane -convex post lens, dislocation plastic storehouse, resets plastic storehouse and slow axis collimation plane -convex post lens array four bibliographic categories branch. The parallel glass thin slice of the little small -size of adoption, to every independent luminescence unit realization light beam dislocation plastic and rearrangement plastic in the high power semiconductor lasers ware linear array and then is realized the semiconductor laser linear array and is restrainted the long -pending adjustment of ginseng through the optimal design of size and angle as the beam shaping subassembly. This invention has that the device is with low costs, the plastic is efficient, be applicable to advantages such as high power semiconductor lasers ware. High -power semiconductor laser output light source based on this invention development can be used in numerous fields such as pumping solid laser, medical treatment and industry processing.
Description
Technical field
The invention belongs to laser technology application, providing a kind of high power semiconductor lasers linear array and realize the long-pending device adjusted of bundle ginseng, the high-power semiconductor laser output light source developed based on this invention can be applicable to the various fields such as light-pumped solid state laser, medical treatment and industrial processes.
Background technology
Semiconductor laser is owing to having the advantages such as electro-optical efficiency height, good reliability, miniaturization, all developed rapidly at the aspect such as laser pump (ing) and direct application, particularly diode laser array is integrated with multiple semiconductor light emitting unit, the advantage such as have that output is high and integration is good, applies the most extensive.But the waveguiding structure special due to it and string configuration, cause output beam being parallel to P-N junction direction (slow axis) and to be perpendicular to the bundle ginseng in P-N junction direction (fast axle) long-pending widely different, limit the application of this device.In order to preferably apply diode laser array light source, need according to requirements, its outgoing beam is carried out the long-pending adjustment of bundle ginseng.The most domestic and international for the long-pending method adjusted of diode laser array bundle ginseng, many employing step mirror method, optical-fiber bundling methods etc..But the shortcoming of such method is in light beam cutting, shaping is inefficient, the reason of energy loss is to may often be such that in the design of such method to cut for diode laser array slow axis entirety hot spot, cause cut point (line) may be in diode laser array on luminescence unit, being limited by the luminous zone size of space, slow-axis direction light beam can not realize preferably collimating simultaneously.Therefore, the high efficiency long-pending adjusting apparatus of bundle ginseng and technology always semiconductor laser linear array light source push a key core technology of application to.
Summary of the invention
The purpose of the present invention is for prior art problem, use microsize parallel glass thin slice as beam shaping assembly, designed by the optimization of size and angle, realize light beam dislocation shaping for independent luminescence unit each in high power semiconductor lasers linear array and reset shaping, and then realizing the adjustment that diode laser array bundle ginseng is long-pending.This invention has that device cost is low, shaping efficiency high, be applicable to the advantages such as high power semiconductor lasers.
Realization the technical scheme is that
A kind of high power semiconductor lasers linear array realizes the long-pending device adjusted of bundle ginseng, include successively to emergent light direction from incident illumination direction: fast axis collimation plano-convex post lens arrangement, dislocation shaping stack architecture, rearrangement shaping stack architecture and slow axis collimation plano-convex cylindrical lens array structure
Projection lens in described fast axis collimation plano-convex post lens arrangement are mutually perpendicular to the projection lens in slow axis collimation plano-convex cylindrical lens array structure,
Described dislocation shaping stack architecture is mutually perpendicular to resetting shaping stack architecture.
In technique scheme, described dislocation shaping stack architecture includes that the some groups of sheet glass groups being set up in parallel, each group of sheet glass group include two block-shaped parallelogram sheet glass of the same size and one piece of rectangular glass sheet.
In technique scheme, two blocks of parallelogram sheet glass are each attached in two planes of rectangular glass sheet, and with the center of rectangular glass sheet as basic point, two pieces of parallelogram sheet glass centrosymmetry arrange.
In technique scheme, described parallelogram glass length of a film limit diagonal is equal with the catercorner length of rectangular glass sheet.
In technique scheme, described rearrangement shaping stack architecture includes one piece of rectangular glass sheet, and some blocks of parallelogram sheet glass are each posted in the both sides of rectangular glass sheet.
In technique scheme, the parallelogram glass sheet shapes of the both sides of described rectangular glass sheet is in the same size, and quantity is identical.
In technique scheme, the parallelogram sheet glass of described rectangular glass sheet both sides is set up in parallel, and arranges with the center of rectangular glass sheet for basic point centrosymmetry.
In technique scheme, a limit of described parallelogram sheet glass is parallel with rectangular glass sheet minor face, and two diagonal angles on parallelogram glass length of a film limit each contact with the long limit of rectangular glass sheet.
Compared with prior art, it is an advantage of the current invention that:
The present invention has the advantages such as principle is simple, device is easily processed, regulated efficiency high, integration is good, and the high-power semiconductor laser coupling output light source developed based on this invention can be applicable to the various fields such as light-pumped solid state laser, medical treatment and industrial processes.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the schematic diagram of dislocation shaping stack architecture in the present invention；
Fig. 3 is the schematic diagram resetting shaping stack architecture in the present invention；
Wherein: 1 is high power semiconductor lasers linear array, 2 is fast axis collimation plano-convex post lens, 3 is dislocation shaping storehouse, 31 is parallelogram sheet glass, and 32 is rectangular glass sheet, and 4 is to reset shaping storehouse, 41 is parallelogram sheet glass, 42 is rectangular glass sheet, and 5 is the long-pending integrated fixation kit of adjusting apparatus of bundle ginseng, and 6 is that slow axis collimates plano-convex cylindrical lens array.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the present invention is described in detail.
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
As it is shown in figure 1, the present invention includes fast axis collimation plano-convex post lens, dislocation shaping storehouse, resets shaping storehouse, slow axis collimation plano-convex cylindrical lens array four part, then by fixation kit, four parts are fixed into a complete device.
Fast axis collimation plano-convex post lens arrangement has one section of fixed area along quick shaft direction, is respectively distributed to the both sides of effective collimation areas.Its focal length is in 400 μm～900 μm, and application surface all plates and applies Wavelength matched low reflectivity film.
Dislocation shaping stack architecture is formed one group by two kinds of different sizes and the parallel glass thin slice of angle, parallelogram sheet glass 31 and rectangular glass sheet 32, two parallelogram sheet glass 31 and a rectangular glass sheet 32.Two parallelogram sheet glass 31 are separately positioned on the both sides of rectangular glass sheet 32, and put the setting that is centrosymmetric on the basis of rectangular glass sheet 32 center, and the long limit diagonal of parallelogram sheet glass 31 is equal with rectangular glass sheet 32 catercorner length.That is parallelogram sheet glass 31 each flushes with top edge and the lower limb of rectangular glass sheet 32.As in figure 2 it is shown, two parallelogram being centrosymmetric 31 opposed, then by some groups of parallel combinations together.Wherein parallelogram sheet glass 31 plays light beam dislocation effect, and rectangular glass sheet 32 plays light beam transmission effect and assembly fixation.In assembly, all application surfaces all plate and apply Wavelength matched low reflectivity film.
Reset shaping stack architecture by a rectangular glass sheet 42 and the some parallelogram sheet glass 41 being separately positioned on rectangular glass sheet 42 both sides.As shown in Figure 3, side by side by being provided with multiple parallelogram sheet glass 41 on the end face of rectangular glass sheet 42, be again provided with the parallelogram sheet glass 41 of equal number in the bottom surface of rectangular glass sheet 42, the parallelogram sheet glass 41 of rectangular glass sheet about 42 both sides is centrosymmetric.Therefore, two parallelogram sheet glass directions one on the other are contrary.In this configuration, parallelogram glass flake 41 plays light beam rearrangement effect, and rectangular glass sheet 42 plays light beam transmission effect and assembly fixation.In assembly, all application surfaces all plate and apply Wavelength matched low reflectivity film.
Slow axis collimation plano-convex cylindrical lens array structure is to have the slow axis collimation plano-convex cylindrical lens array of period profile along slow-axis direction, and application surface all plates and applies Wavelength matched low reflectivity film.
In this device, the projection lens in fast axis collimation plano-convex post lens arrangement and the projection lens in slow axis collimation plano-convex cylindrical lens array structure see it is orthogonal from space；Same dislocation shaping stack architecture spatially sees it is also orthogonal with rearrangement shaping stack architecture.
The work process of apparatus of the present invention is:
Utilize fast axis collimation plano-convex post lens that the fast axial light Shu Jinhang of high power semiconductor lasers linear array is collimated.
Utilize dislocation shaping storehouse that luminescence unit outgoing beam independent in high power semiconductor lasers linear array carries out the shaping that misplaces, wherein the light beam through parallelogram parallel glass sheet 31 assembly forms dislocation effect, light beam through rectangular glass sheet 32 assembly transmits along original optical path, the outgoing beam of the corresponding independent luminescence unit of each assembly.
Utilize rearrangement shaping storehouse that luminescence unit outgoing beam independent in high power semiconductor lasers linear array carries out the shaping that misplaces, wherein the light beam through parallelogram sheet glass 41 assembly forms rearrangement effect, light beam through rectangular glass sheet 42 assembly transmits along original optical path, the outgoing beam of the corresponding independent luminescence unit of each assembly.
After resetting shaping, forming three layers of light beam along quick shaft direction, slow-axis direction forms four row light beams, utilizes slow axis plano-convex cylindrical lens array, the wherein corresponding slow axis plano-convex post lens unit of each column beam unit, it is achieved the adjustment that the collimation of light beam slow axis and high power semiconductor lasers linear array bundle ginseng are amassed.
By accurate adjusting pole, utilize ultraviolet glue to carry out fast axis collimation plano-convex post lens, dislocation shaping storehouse, rearrangement shaping storehouse, slow axis plano-convex cylindrical lens array and fixation kit accurate fixing, form the integrated long-pending adjusting apparatus of bundle ginseng.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent and improvement etc. made within the spirit and principles in the present invention, should be included within the scope of the present invention.
Claims (10)
1. the long-pending device adjusted of high power semiconductor lasers linear array bundle ginseng, it is characterized in that including successively to emergent light direction from incident illumination direction: fast axis collimation plano-convex post lens arrangement, dislocation shaping stack architecture, rearrangement shaping stack architecture and slow axis collimation plano-convex cylindrical lens array structure
Projection lens in described fast axis collimation plano-convex post lens arrangement are mutually perpendicular to the projection lens in slow axis collimation plano-convex cylindrical lens array structure,
Described dislocation shaping stack architecture is mutually perpendicular to resetting shaping stack architecture.
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 1 ginseng, it is characterized in that described dislocation shaping stack architecture includes that the some groups of sheet glass groups being set up in parallel, each group of sheet glass group include two block-shaped parallelogram sheet glass (31) of the same size and one piece of rectangular glass sheet (32).
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 2 ginseng, it is characterized in that two pieces of parallelogram sheet glass (31) are each attached in (32) two planes of rectangular glass sheet, with the center of rectangular glass sheet (32) as basic point, two pieces of parallelogram sheet glass (31) centrosymmetry arrange.
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 3 ginseng, it is characterised in that described parallelogram sheet glass (31) long limit diagonal is equal with the catercorner length of rectangular glass sheet (32).
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 1 ginseng, it is characterized in that described rearrangement shaping stack architecture includes one piece of rectangular glass sheet (42), some pieces of parallelogram sheet glass (41) are each posted in the both sides of rectangular glass sheet (42).
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 5 ginseng, it is characterised in that parallelogram sheet glass (41) shape size of the both sides of described rectangular glass sheet (42) is consistent, and quantity is identical.
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 6 ginseng, it is characterized in that the parallelogram sheet glass (41) of described rectangular glass sheet (42) both sides is set up in parallel, and be that basic point centrosymmetry is arranged with the center of rectangular glass sheet (42).
The long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle the most according to claim 7 ginseng, it is characterized in that a limit of described parallelogram sheet glass (41) is parallel with rectangular glass sheet (42) minor face, each long limit with rectangular glass sheet (42), two diagonal angles on parallelogram sheet glass (41) long limit contacts.
9. according to the arbitrary described long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle ginseng of claim 2～4, it is characterised in that described parallelogram sheet glass (31), rectangular glass sheet (32) application surface on be all coated with one layer of low reflectivity film.
10. according to the arbitrary described long-pending device adjusted of a kind of high power semiconductor lasers linear array bundle ginseng of claim 5～8, it is characterised in that described parallelogram sheet glass (32), rectangular glass sheet (42) application surface on be all coated with one layer of low reflectivity film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620066767.9U CN205539734U (en) | 2016-01-25 | 2016-01-25 | Device of joining long -pending adjustment is restrainted to high power semiconductor lasers ware linear array |
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| CN201620066767.9U CN205539734U (en) | 2016-01-25 | 2016-01-25 | Device of joining long -pending adjustment is restrainted to high power semiconductor lasers ware linear array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105511089A (en) * | 2016-01-25 | 2016-04-20 | 中国工程物理研究院应用电子学研究所 | Device for adjusting beam parametric product of big power semiconductor laser linear array |
-
2016
- 2016-01-25 CN CN201620066767.9U patent/CN205539734U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105511089A (en) * | 2016-01-25 | 2016-04-20 | 中国工程物理研究院应用电子学研究所 | Device for adjusting beam parametric product of big power semiconductor laser linear array |
| CN105511089B (en) * | 2016-01-25 | 2017-11-14 | 中国工程物理研究院应用电子学研究所 | A kind of device of high power semiconductor lasers linear array beam ginseng product adjustment |
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Effective date of registration: 20191220 Address after: 330029 10th floor, science and technology building, Lianchuang photoelectric technology park, 168 Jingdong Avenue, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: Jiangxi ZHONGJIU Laser Technology Co.,Ltd. Address before: 919 box 1013, box 621000, Mianyang City, Sichuan Province Patentee before: INSTITUTE OF APPLIED ELECTRONICS, CAEP |
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Effective date of registration: 20230901 Address after: Room 517, 5th Floor, Building 1, Linrui Youth Apartment, No. 955 Rulehu Street, Linkong Economic Zone, Nanchang City, Jiangxi Province, 330117 Patentee after: ZHONGJIU Optoelectronic Industry Co.,Ltd. Address before: 10th Floor, Science and Technology Building, Lianchuang Optoelectronic Technology Park, No. 168 Jingdong Avenue, Nanchang High tech Industrial Development Zone, Nanchang City, Jiangxi Province, 330029 Patentee before: Jiangxi ZHONGJIU Laser Technology Co.,Ltd. |