CN205529147U - 一种碳化硅单晶生长用复合保温结构 - Google Patents
一种碳化硅单晶生长用复合保温结构 Download PDFInfo
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- CN205529147U CN205529147U CN201620103708.4U CN201620103708U CN205529147U CN 205529147 U CN205529147 U CN 205529147U CN 201620103708 U CN201620103708 U CN 201620103708U CN 205529147 U CN205529147 U CN 205529147U
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title abstract description 15
- 238000011534 incubation Methods 0.000 title abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 70
- 239000010439 graphite Substances 0.000 claims abstract description 70
- 238000009413 insulation Methods 0.000 claims abstract description 32
- 239000007787 solid Substances 0.000 claims abstract description 32
- 239000000835 fiber Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 229920000297 Rayon Polymers 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 238000010276 construction Methods 0.000 abstract description 7
- 238000005253 cladding Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 238000004321 preservation Methods 0.000 abstract 1
- 239000000498 cooling water Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105543966A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用复合保温结构 |
CN112648847A (zh) * | 2021-01-11 | 2021-04-13 | 锦州同创真空冶金科技有限公司 | 一种超高温真空感应熔炼炉 |
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2016
- 2016-02-02 CN CN201620103708.4U patent/CN205529147U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105543966A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用复合保温结构 |
CN112648847A (zh) * | 2021-01-11 | 2021-04-13 | 锦州同创真空冶金科技有限公司 | 一种超高温真空感应熔炼炉 |
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