CN205490525U - RF communications transceiver circuits - Google Patents
RF communications transceiver circuits Download PDFInfo
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- CN205490525U CN205490525U CN201620003153.6U CN201620003153U CN205490525U CN 205490525 U CN205490525 U CN 205490525U CN 201620003153 U CN201620003153 U CN 201620003153U CN 205490525 U CN205490525 U CN 205490525U
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Abstract
The utility model discloses a RF communications transceiver circuits, including the radio -frequency antenna, single -pole double -throw, a bandwidth -limited circuit, a second band -pass filter circuit, low noise amplifier circuit, power amplification circuit and transceiver unit, single -pole double -throw's motionless end and radio frequency antenna connection, single -pole double -throw's the first end that moves is connected with a bandwidth -limited circuit's input, a bandwidth -limited circuit's output is connected with low noise amplifier circuit 's input, low noise amplifier circuit 's output is connected with transceiver unit's input, single -pole double -throw's second moves the end and is connected with power amplification circuit's output, power amplification circuit's input and the 2nd bandwidth -limited circuit's output are connected, the 2nd bandwidth -limited circuit's input is connected with transceiver unit's output. The utility model discloses switching RF communications's that can be convenient receiving and dispatching state.
Description
Technical field
This utility model relates to technology for radio frequency field, particularly relates to a kind of radio communication transmission circuit.
Background technology
Improving constantly the deep development with modern communication technology along with people's living standard, the utilization of technology for radio frequency is more and more extensively and universal.Radio frequency communications circuitry is made up of antenna, signal processing unit and controller.Existing radio communication transmitting-receiving selects to be by the control realization of controller, during emission state, encodes baseband signal, is launched by antenna after power amplification；During reception state, antenna receives signal, through low-noise amplifier be amplified into reception processing unit be decoded and subsequent treatment launch with receive during, power amplifier and low-noise amplifier all simultaneously turn on, communication process can cause interfering with each other, finally affect the quality of signal of communication.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, it is provided that a kind of radio communication transmission circuit, it is possible to switch the reiving/transmitting state of radio communication easily.
The purpose of this utility model is achieved through the following technical solutions: a kind of radio communication transmission circuit, including radio-frequency antenna, single-pole double-throw switch (SPDT), first bandwidth-limited circuit, second bandwidth-limited circuit, low noise amplifier circuit, power amplification circuit and Base Band Unit, described single-pole double-throw switch (SPDT) includes not moved end, first moved end, second moved end, first switch, second switch, the control end of logic circuit and single-pole double-throw switch (SPDT), moved end does not switchs with first respectively and the input of second switch is connected, outfan and first moved end of the first switch connect, the outfan of second switch and the second moved end connect, the end that controls of the first switch is connected with the negative pole of logic circuit, the end that controls of second switch is connected with the positive pole of logic circuit, the positive pole of logic circuit is connected with the control end of single-pole double-throw switch (SPDT)；The not moved end of single-pole double-throw switch (SPDT) is connected with radio-frequency antenna, first moved end of single-pole double-throw switch (SPDT) is connected with the input of the first bandwidth-limited circuit, the outfan of the first bandwidth-limited circuit is connected with the input of low noise amplifier circuit, the outfan of low noise amplifier circuit is connected with the input of Base Band Unit, second moved end of single-pole double-throw switch (SPDT) is connected with the outfan of power amplification circuit, the input of power amplification circuit and the outfan of the second bandwidth-limited circuit connect, and the input of the second bandwidth-limited circuit is connected with the outfan of Base Band Unit.
Described low-noise filter uses cascode structure, and low-noise amplifier includes that is followed an electric capacity, and these two ends following electric capacity connect grid and the ground of common source configuration MOS pipe respectively.
Described low-noise amplifier includes common source configuration metal-oxide-semiconductor, common gate structure MOS pipe, capacitance, ground capacity, output capacitance, follows electric capacity, the first inductance, the second inductance, the first resistance and the second resistance.
The grid of described common source configuration metal-oxide-semiconductor simultaneously with capacitance, the first resistance and follow one end of electric capacity and be connected
Connect, the other end of capacitance connects signal input port, the other end of the first resistance is connected to the first bias voltage input mouth, one end of the other end and described first inductance of following electric capacity is connected, then the two common ground, the other end of the first inductance is connected to the source electrode of common source configuration MOS pipe；The drain electrode of common source configuration MOS pipe is connected with the source electrode of common gate structure metal-oxide-semiconductor；The grid of common gate structure MOS pipe is connected with one end of the second resistance and ground capacity simultaneously, and the other end of the second resistance and the second bias voltage input mouth connect, the other end ground connection of ground capacity；The drain electrode of common gate structure metal-oxide-semiconductor is connected to the outfan of signal by described output capacitance, simultaneously by the second inductance connection in external power source.
Described power amplifier includes the input coupling electric capacity being sequentially connected with, the power tube of more than two grades and output coupling capacitor, it is provided with input matching circuit between input coupling electric capacity and first order power tube, it is provided with intervalve matching circuit between two-stage power tube, between afterbody power tube and output coupling capacitor, is provided with output matching circuit；Output matching circuit includes microstrip line, the first electric capacity, the second electric capacity and the 3rd electric capacity, first end of the first electric capacity, the second electric capacity and the 3rd electric capacity is all connected with microstrip line, the second equal ground connection of end of the first electric capacity, the second electric capacity and the 3rd electric capacity, microstrip line is connected with the outfan of afterbody power tube and one end of output coupling capacitor respectively.
Described input matching circuit includes the 3rd inductance and the 4th electric capacity；One end of 3rd inductance is connected with input coupling electric capacity, and the other end of the 3rd inductance is connected with the input of first order power tube；Node between one end of 4th electric capacity with input coupling electric capacity and the first inductance is connected, the other end ground connection of the 4th electric capacity.
Described intervalve matching circuit includes the 4th inductance, the 3rd resistance and the 5th electric capacity；One end of 4th inductance is connected with the outfan of the previous stage power tube in two-stage power tube, and the other end of the 4th inductance is connected with the input of the rear stage power tube in described two-stage power tube；Node between one end of 3rd resistance with the previous stage power tube in two-stage power tube and the 4th inductance is connected, and the other end of the 3rd resistance and one end of the 5th electric capacity connect；The other end ground connection of the 5th electric capacity.
The beneficial effects of the utility model are:
(1) when signal launched by needs, second switch is closed, it is achieved power amplifier is connected with radio-frequency antenna, when needs receive signal, Guan Bi the first switch, it is achieved low-noise amplifier is connected with radio-frequency antenna, simple to operate, and effectively reduce interference, improve communication quality；
(2) the single-pole double-throw switch (SPDT) simple in construction in this utility model, switching speed is fast, volume is little, reliability is high, caloric value is little, be prone to oneself makes.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of this utility model a kind of radio communication transmission circuit.
Detailed description of the invention
The technical solution of the utility model is described in further detail below in conjunction with the accompanying drawings, but protection domain of the present utility model is not limited to the following stated.
As shown in Figure 1, a kind of radio communication transmission circuit, including radio-frequency antenna, single-pole double-throw switch (SPDT), first bandwidth-limited circuit, second bandwidth-limited circuit, low noise amplifier circuit, power amplification circuit and Base Band Unit, described single-pole double-throw switch (SPDT) includes not moved end, first moved end, second moved end, first switch, second switch, the control end of logic circuit and single-pole double-throw switch (SPDT), moved end does not switchs with first respectively and the input of second switch is connected, outfan and first moved end of the first switch connect, the outfan of second switch and the second moved end connect, the end that controls of the first switch is connected with the negative pole of logic circuit, the end that controls of second switch is connected with the positive pole of logic circuit, the positive pole of logic circuit is connected with the control end of single-pole double-throw switch (SPDT)；The not moved end of single-pole double-throw switch (SPDT) is connected with radio-frequency antenna, first moved end of single-pole double-throw switch (SPDT) is connected with the input of the first bandwidth-limited circuit, the outfan of the first bandwidth-limited circuit is connected with the input of low noise amplifier circuit, the outfan of low noise amplifier circuit is connected with the input of Base Band Unit, second moved end of single-pole double-throw switch (SPDT) is connected with the outfan of power amplification circuit, the input of power amplification circuit and the outfan of the second bandwidth-limited circuit connect, and the input of the second bandwidth-limited circuit is connected with the outfan of Base Band Unit.
Operation principle of the present utility model is: when signal launched by needs, Guan Bi second switch, realize power amplifier to connect with radio-frequency antenna, when needs receive signal, Guan Bi the first switch, it is achieved low-noise amplifier is connected with radio-frequency antenna, simple to operate, and effectively reduce interference, improve communication quality.
Described low-noise filter uses cascode structure, and low-noise amplifier includes that is followed an electric capacity, and these two ends following electric capacity connect grid and the ground of common source configuration MOS pipe respectively.
Described low-noise amplifier includes common source configuration metal-oxide-semiconductor, common gate structure MOS pipe, capacitance, ground capacity, output capacitance, follows electric capacity, the first inductance, the second inductance, the first resistance and the second resistance.
The grid of described common source configuration metal-oxide-semiconductor simultaneously with capacitance, the first resistance and follow one end of electric capacity and be connected
Connect, the other end of capacitance connects signal input port, the other end of the first resistance is connected to the first bias voltage input mouth, one end of the described other end and described first inductance following electric capacity is connected, then the two common ground, the other end of the first inductance is connected to the source electrode of common source configuration MOS pipe；The drain electrode of common source configuration MOS pipe is connected with the source electrode of common gate structure metal-oxide-semiconductor；The grid of common gate structure MOS pipe is connected with one end of the second resistance and ground capacity simultaneously, and the other end of the second resistance and the second bias voltage input mouth connect, the other end ground connection of ground capacity；The drain electrode of common gate structure metal-oxide-semiconductor is connected to the outfan of signal by output capacitance, simultaneously by described second inductance connection in external power source.
Described low-noise amplifier is by arranging an electric capacity between the fet gate of common source and reference ground, and its capacitance of optimization of compromising, circuit structure is simple, low in energy consumption, integrated level is high, input third order intermodulation point IIP3 can be effectively improved, improve the gain of low-noise amplifier, the noise coefficient of rear class in reception system do not produced impact and then improves the linearity, optimizing the performance of low-noise amplifier on the whole yet.
Described power amplifier includes the input coupling electric capacity being sequentially connected with, the power tube of more than two grades and output coupling capacitor, it is provided with input matching circuit between input coupling electric capacity and first order power tube, it is provided with intervalve matching circuit between two-stage power tube, between afterbody power tube and output coupling capacitor, is provided with output matching circuit；Output matching circuit includes microstrip line, the first electric capacity, the second electric capacity and the 3rd electric capacity, first end of the first electric capacity, the second electric capacity and the 3rd electric capacity is all connected with microstrip line, the second equal ground connection of end of the first electric capacity, the second electric capacity and the 3rd electric capacity, microstrip line is connected with the outfan of afterbody power tube and one end of output coupling capacitor respectively.
Described input matching circuit includes the 3rd inductance and the 4th electric capacity；One end of 3rd inductance is connected with input coupling electric capacity, and the other end of the 3rd inductance is connected with the input of first order power tube；Node between one end of 4th electric capacity with input coupling electric capacity and the first inductance is connected, the other end ground connection of the 4th electric capacity.
Described intervalve matching circuit includes the 4th inductance, the 3rd resistance and the 5th electric capacity；One end of 4th inductance is connected with the outfan of the previous stage power tube in two-stage power tube, and the other end of the 4th inductance is connected with the input of the rear stage power tube in described two-stage power tube；Node between one end of 3rd resistance with the previous stage power tube in two-stage power tube and the 4th inductance is connected, and the other end of the 3rd resistance and one end of the 5th electric capacity connect；The other end ground connection of the 5th electric capacity.
Described power amplification circuit uses circuit to be simply input, inter-stage and output matching circuit, reduces the volume of power amplification circuit.
The above is only preferred implementation of the present utility model, it is to be understood that this utility model is not limited to form disclosed herein, it is not to be taken as the eliminating to other embodiments, and can be used for other combinations various, amendment and environment, and can be modified by above-mentioned teaching or the technology of association area or knowledge in contemplated scope described herein.And the change that those skilled in the art are carried out and change are without departing from spirit and scope of the present utility model, the most all should be in the protection domain of this utility model claims.
Claims (6)
1. a radio communication transmission circuit, it is characterized in that: include radio-frequency antenna, single-pole double-throw switch (SPDT), first bandwidth-limited circuit, second bandwidth-limited circuit, low noise amplifier circuit, power amplification circuit and Base Band Unit, described single-pole double-throw switch (SPDT) includes not moved end, first moved end, second moved end, first switch, second switch, the control end of logic circuit and single-pole double-throw switch (SPDT), moved end does not switchs with first respectively and the input of second switch is connected, outfan and first moved end of the first switch connect, the outfan of second switch and the second moved end connect, the end that controls of the first switch is connected with the negative pole of logic circuit, the end that controls of second switch is connected with the positive pole of logic circuit, the positive pole of logic circuit is connected with the control end of single-pole double-throw switch (SPDT)；The not moved end of single-pole double-throw switch (SPDT) is connected with radio-frequency antenna, first moved end of single-pole double-throw switch (SPDT) is connected with the input of the first bandwidth-limited circuit, the outfan of the first bandwidth-limited circuit is connected with the input of low noise amplifier circuit, the outfan of low noise amplifier circuit is connected with the input of Base Band Unit, second moved end of single-pole double-throw switch (SPDT) is connected with the outfan of power amplification circuit, the input of power amplification circuit and the outfan of the second bandwidth-limited circuit connect, and the input of the second bandwidth-limited circuit is connected with the outfan of Base Band Unit.
A kind of radio communication transmission circuit the most according to claim 1, it is characterized in that: described low-noise filter uses cascode structure, low-noise amplifier includes that is followed an electric capacity, and these two ends following electric capacity connect grid and the ground of common source configuration MOS pipe respectively.
A kind of radio communication transmission circuit the most according to claim 2, it is characterised in that: described low-noise amplifier includes common source configuration metal-oxide-semiconductor, common gate structure MOS pipe, capacitance, ground capacity, output capacitance, follows electric capacity, the first inductance, the second inductance, the first resistance and the second resistance；
The grid of described common source configuration metal-oxide-semiconductor simultaneously with capacitance, the first resistance and follow one end of electric capacity and be connected
Connect, the other end of capacitance connects signal input port, the other end of the first resistance is connected to the first bias voltage input mouth, one end of the other end and described first inductance of following electric capacity is connected, then the two common ground, the other end of the first inductance is connected to the source electrode of common source configuration MOS pipe；The drain electrode of common source configuration MOS pipe is connected with the source electrode of common gate structure metal-oxide-semiconductor；The grid of common gate structure MOS pipe is connected with one end of the second resistance and ground capacity simultaneously, and the other end of the second resistance and the second bias voltage input mouth connect, the other end ground connection of ground capacity；The drain electrode of common gate structure metal-oxide-semiconductor is connected to the outfan of signal by described output capacitance, simultaneously by the second inductance connection in external power source.
A kind of radio communication transmission circuit the most according to claim 1, it is characterized in that: described power amplifier includes the input coupling electric capacity being sequentially connected with, the power tube of more than two grades and output coupling capacitor, it is provided with input matching circuit between input coupling electric capacity and first order power tube, it is provided with intervalve matching circuit between two-stage power tube, between afterbody power tube and output coupling capacitor, is provided with output matching circuit；Output matching circuit includes microstrip line, the first electric capacity, the second electric capacity and the 3rd electric capacity, first end of the first electric capacity, the second electric capacity and the 3rd electric capacity is all connected with microstrip line, the second equal ground connection of end of the first electric capacity, the second electric capacity and the 3rd electric capacity, microstrip line is connected with the outfan of afterbody power tube and one end of output coupling capacitor respectively.
A kind of radio communication transmission circuit the most according to claim 4, it is characterised in that: described input matching circuit includes the 3rd inductance and the 4th electric capacity；One end of 3rd inductance is connected with input coupling electric capacity, and the other end of the 3rd inductance is connected with the input of first order power tube；Node between one end of 4th electric capacity with input coupling electric capacity and the first inductance is connected, the other end ground connection of the 4th electric capacity.
A kind of radio communication transmission circuit the most according to claim 4, it is characterised in that: described intervalve matching circuit includes the 4th inductance, the 3rd resistance and the 5th electric capacity；One end of 4th inductance is connected with the outfan of the previous stage power tube in two-stage power tube, and the other end of the 4th inductance is connected with the input of the rear stage power tube in described two-stage power tube；Node between one end of 3rd resistance with the previous stage power tube in two-stage power tube and the 4th inductance is connected, and the other end of the 3rd resistance and one end of the 5th electric capacity connect；The other end ground connection of the 5th electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620003153.6U CN205490525U (en) | 2016-01-05 | 2016-01-05 | RF communications transceiver circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620003153.6U CN205490525U (en) | 2016-01-05 | 2016-01-05 | RF communications transceiver circuits |
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| CN205490525U true CN205490525U (en) | 2016-08-17 |
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| CN201620003153.6U Active CN205490525U (en) | 2016-01-05 | 2016-01-05 | RF communications transceiver circuits |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994918A (en) * | 2017-12-21 | 2018-05-04 | 南京华讯方舟通信设备有限公司 | A kind of single-pole double-throw switch (SPDT) for radio-frequency receiving-transmitting switching |
| CN108377155A (en) * | 2018-02-02 | 2018-08-07 | 广州慧睿思通信息科技有限公司 | A kind of multi-standard, multiband, miniaturization communication receiver apparatus |
| CN109560832A (en) * | 2019-01-24 | 2019-04-02 | 广西芯百特微电子有限公司 | A kind of radio circuit and terminal for 5G communication |
| WO2020019124A1 (en) * | 2018-07-23 | 2020-01-30 | Oppo广东移动通信有限公司 | Emitting moudle, antenna switch control method, and related products |
-
2016
- 2016-01-05 CN CN201620003153.6U patent/CN205490525U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994918A (en) * | 2017-12-21 | 2018-05-04 | 南京华讯方舟通信设备有限公司 | A kind of single-pole double-throw switch (SPDT) for radio-frequency receiving-transmitting switching |
| CN107994918B (en) * | 2017-12-21 | 2024-05-10 | 武汉华讯国蓉科技有限公司 | Single-pole double-throw switch for radio frequency receiving and transmitting switching |
| CN108377155A (en) * | 2018-02-02 | 2018-08-07 | 广州慧睿思通信息科技有限公司 | A kind of multi-standard, multiband, miniaturization communication receiver apparatus |
| WO2020019124A1 (en) * | 2018-07-23 | 2020-01-30 | Oppo广东移动通信有限公司 | Emitting moudle, antenna switch control method, and related products |
| US11799527B2 (en) | 2018-07-23 | 2023-10-24 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Transmitting module, electronic device, and method for controlling antenna switching |
| CN109560832A (en) * | 2019-01-24 | 2019-04-02 | 广西芯百特微电子有限公司 | A kind of radio circuit and terminal for 5G communication |
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