CN205385349U - Controlling means based on independent zero passage of three phase current is turn -offed - Google Patents

Controlling means based on independent zero passage of three phase current is turn -offed Download PDF

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Publication number
CN205385349U
CN205385349U CN201620192909.6U CN201620192909U CN205385349U CN 205385349 U CN205385349 U CN 205385349U CN 201620192909 U CN201620192909 U CN 201620192909U CN 205385349 U CN205385349 U CN 205385349U
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China
Prior art keywords
audion
gate fet
isolated gate
coupler
triode
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Expired - Fee Related
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CN201620192909.6U
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Chinese (zh)
Inventor
谢凡
葛学海
赵冬鸣
花永涛
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Kaifeng Measurement & Control Technology Co Ltd
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Kaifeng Measurement & Control Technology Co Ltd
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Abstract

The utility model relates to a controlling means based on independent zero passage of three phase current is turn -offed, including the independent and the same insulated gate field effect tran sistor control circuit of structure of three routes, insulated gate field effect tran sistor control circuit includes optical coupler U, microprocessor MCU, triode S, triode T, insulated gate field effect tran sistor Q and separating brake coil L, and optical coupler U's input links to each other with microprocessor MCU with the three phase current source respectively, and optical coupler U's output is continuous with triode S and triode T respectively, triode S and triode T links to each other, and insulated gate field effect tran sistor links to each other with triode S and triode T respectively, and insulated gate field effect tran sistor Q links to each other with separating brake coil L. The utility model discloses a three -phase mechanism trigger the return circuit complete independence, do not have any relevance each other, overcome the drawback that original three -phase triggered simultaneously, showing reduction power consumption, eliminate the influence to equipment life that electromagnetic interference brought.

Description

A kind of control device based on three-phase current independence zero-crossing switching
Technical field
This utility model relates to a kind of alternating current load circuit breaker in middle and controls device, is specifically related to a kind of control device based on three-phase current independence zero-crossing switching.
Background technology
In conventional AC distribution system, adopting contact switch, mechanical type chopper is connected in current supply circuit and realizes electric energy distribution.The frequent action of mechanical contact parts forms mechanical wear, and contact is often cut-off bigger electric current and defined arc light, the life-span of impact switch.And, in the moment turning on and off load circuit, due to the easy ablation contact of electric arc that voltage and current sudden change produces, cause electromagnetic interference, increase on state resistance, make the caloric value of switch own increase, affect the reliability of electrical equipment.Effective way is that the mechanism adopting current over-zero disjunction substitutes mechanical contact-type panel switches, it is to avoid the phenomenon in big current conditions lower contact arcing produces, and significantly extends working life.Adopt more IGCT as alternating current solid-state power switch at present, although IGCT is opened soon, it may be achieved zero cross fired, but operating frequency is low, the turn-off time is longer, particularly when loop current is very big, as, under short-circuit condition, still needed to zero cross fired by the time, the current duration flowing through IGCT is long, easily causing hot injury, on the other hand, the conduction voltage drop of IGCT is bigger, in high-voltage system inapplicable, self-radiating require height.Current state-of-the-art way is to adopt to control the permanent-magnet breaker shortcoming to overcome IGCT based on power MOSFET.Power MOSFET is a kind of power component triggering vacuum tube to drive bistable permanent magnetic coil with grid voltage between source electrodes control drain-source electrode current.Along with power MOSFET manufacturing process is fast-developing, device conducting resistance when meeting through-current capacity can be low to moderate a few milliohm, can significantly reduce conduction voltage drop and power attenuation.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of control device based on three-phase current independence zero-crossing switching, it is possible to significantly reduce power attenuation, eliminates the impact on equipment life that electromagnetic interference is brought.
The technical scheme that this utility model solves above-mentioned technical problem is as follows: a kind of control device based on three-phase current independence zero-crossing switching, including the isolated gate FET control circuit that three tunnel independences and structure are identical, every road isolated gate FET control circuit connects the phase in three-phase alternating current respectively, and isolated gate FET control circuit described in every road all includes photo-coupler U, Micro-processor MCV, audion S, audion T, isolated gate FET Q and switching winding L;
The first input end of described photo-coupler U is connected with power supply VCC, second input is connected with described Micro-processor MCV by resistance R1, first outfan is connected with the colelctor electrode of described audion S, and the second outfan is connected with the base stage of described audion S and the base stage of audion T respectively;The emitter stage of described audion S is connected with the emitter stage of described audion T, is connected to resistance R2 between base stage and the emitter stage of described audion S;The colelctor electrode of described audion T is connected with the source electrode of described isolated gate FET Q, is connected to resistance R3 between base stage and the colelctor electrode of described audion T;The gate pole of described isolated gate FET Q is connected with the emitter stage of described audion S and the emitter stage of audion T respectively, the drain electrode of described isolated gate FET Q is connected with one end of described switching winding L, the source electrode of described isolated gate FET Q is connected by the other end of electric capacity C and described switching winding L, is connected to resistance R4 between gate pole and the source electrode of described isolated gate FET Q.
On the basis of technique scheme, this utility model can also do following improvement.
Further, described isolated gate FET Q is N-channel isolated gate FET.
Further, that described N-channel isolated gate FET adopts is power MOSFET.
Further, described photo-coupler U is made up of photodiode L and audion K, the first input end of the just extremely described photo-coupler of described photodiode L, second input that negative pole is described photo-coupler of described photodiode L, first outfan of the extremely described photo-coupler of current collection of described audion K, the second outfan of the extremely described photo-coupler of transmitting of described audion K.
Further, the positive pole of described electric capacity C connects the positive pole of switching winding L, and the negative pole of described electric capacity C connects the source electrode of described isolated gate FET Q.
The beneficial effects of the utility model are: a kind of trigger circuit controlling the three-phase mechanism that device adopts based on three-phase current independence zero-crossing switching of this utility model is completely independent, each other without any association, overcome the drawback that original three-phase triggers simultaneously, significantly reduce power attenuation, eliminate the impact on equipment life that electromagnetic interference is brought;Isolated gate FET adopts bivalve value to trigger circuit simultaneously, it is prevented that isolated gate FET false triggering, strengthens the global reliability of zero-crossing switching.
Accompanying drawing explanation
Fig. 1 is a kind of structured flowchart controlling device based on three-phase current independence zero-crossing switching of this utility model;
Fig. 2 is the circuit structure diagram of a kind of isolated gate FET control circuit controlling device based on three-phase current independence zero-crossing switching of this utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, principle of the present utility model and feature being described, example is served only for explaining this utility model, is not intended to limit scope of the present utility model.
As shown in Figure 1, a kind of control device based on three-phase current independence zero-crossing switching, including the isolated gate FET control circuit that three tunnel independences and structure are identical, every road isolated gate FET control circuit connects the phase in three-phase alternating current respectively, namely the first isolated gate FET control circuit, the second isolated gate FET control circuit and the 3rd isolated gate FET control circuit that separate and structure is identical, first, second, third isolated gate FET control circuit correspondence respectively controls the first-phase electricity in three-phase electricity, second-phase electricity and third phase electricity.Wherein, the structure of described first, second, third isolated gate FET control circuit is all as in figure 2 it is shown, include photo-coupler U, Micro-processor MCV, audion S, audion T, isolated gate FET Q and switching winding L.Described photo-coupler U is made up of photodiode L and audion K, the first input end of the just extremely described photo-coupler of described photodiode L, second input that negative pole is described photo-coupler of described photodiode L, first outfan of the extremely described photo-coupler of current collection of described audion K, the second outfan of the extremely described photo-coupler of transmitting of described audion K;nullThe first input end of described photo-coupler U is connected with power supply VCC,Second input of described photo-coupler U is connected with described Micro-processor MCV by resistance R1,First outfan of described photo-coupler U is connected with the colelctor electrode of described audion S,Second outfan of described photo-coupler U is connected with the base stage of described audion S and the base stage of audion T respectively,The emitter stage of described audion S is connected with the emitter stage of described audion T,It is connected to resistance R2 between base stage and the emitter stage of described audion S,The colelctor electrode of described audion T is connected with the source electrode of described isolated gate FET Q,It is connected to resistance R3 between base stage and the colelctor electrode of described audion T,The gate pole of described isolated gate FET Q is connected with the emitter stage of described audion S and the emitter stage of audion T respectively,The drain electrode of described isolated gate FET Q is connected with one end of described switching winding L,The source electrode of described isolated gate FET Q is connected by the other end of electric capacity C and described switching winding L,It is connected to resistance R4 between gate pole and the source electrode of described isolated gate FET Q.
In this specific embodiment, described isolated gate FET Q is N-channel isolated gate FET.That described N-channel isolated gate FET adopts is power MOSFET.The drain electrode of described isolated gate FET Q is connected with the negative pole of described switching winding L, and the source electrode of described isolated gate FET Q is connected by the positive pole of electric capacity C and described switching winding L.The positive pole of described electric capacity C connects the positive pole of switching winding L, and the negative pole of described electric capacity C connects the source electrode of described isolated gate FET Q.
Describe operation principle of the present utility model below in conjunction with Fig. 2, owing to the structure of described first, second, third isolated gate FET control circuit is all identical, is selected by any of which circuit below and is described.
When the control signal of Micro-processor MCV output is high level, optocoupler bonder U cut-off will not action, audion T is the audion of PNP9012 model, rely on the characteristic of PNP9012 model audion T, the collector and emitter conducting of audion T, the gate pole of isolated gate FET Q is pulled in GND reliably, isolated gate FET Q prohibited acts, the i.e. drain electrode of isolated gate FET Q and source electrode cut-off, namely cannot load DC voltage above switching winding L, so that switching winding cannot action, it is ensured that the circuitry phase in three-phase alternating current is unimpeded;When the control signal of Micro-processor MCV output is low level, photo-coupler U can be switched on, audion S is the audion of NPN9013 model, rely on the characteristic of the audion S of NPN9013 model, audion S turns on, audion T ends, the gate pole of isolated gate FET Q is triggered, isolated gate FET Q turn-on action, namely turn between drain electrode and the source electrode of isolated gate FET Q, DC voltage is loaded above switching winding L, that is switching winding L action, switching winding L can cut off the circuitry phase independence zero-crossing switching that electric current realizes in three-phase alternating current smoothly.The movement time of switching winding L and the unidirectional current of applying are pressed with direct relation, there is relation the time of isolated gate FET Q action direct and microprocessor output the low level retention time, Micro-processor MCV controls the time that low level keeps, thus realizing the accurate control to switching winding L, it is achieved zero-crossing switching.
A kind of trigger circuit controlling the three-phase mechanism that device adopts based on three-phase current independence zero-crossing switching of this utility model is completely independent, each other without any association, overcome the drawback that original three-phase triggers simultaneously, significantly reduce power attenuation, eliminate the impact on equipment life that electromagnetic interference is brought;Isolated gate FET adopts bivalve value to trigger circuit simultaneously, it is prevented that isolated gate FET false triggering, strengthens the global reliability of zero-crossing switching.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all within spirit of the present utility model and principle, any amendment of making, equivalent replacement, improvement etc., should be included within protection domain of the present utility model.

Claims (5)

1. the control device based on three-phase current independence zero-crossing switching, it is characterized in that: include three tunnel independences and the identical isolated gate FET control circuit of structure, every road isolated gate FET control circuit connects the phase in three-phase alternating current respectively, and isolated gate FET control circuit described in every road all includes photo-coupler U, Micro-processor MCV, audion S, audion T, isolated gate FET Q and switching winding L;
The first input end of described photo-coupler U is connected with power supply VCC, second input is connected with described Micro-processor MCV by resistance R1, first outfan is connected with the colelctor electrode of described audion S, and the second outfan is connected with the base stage of described audion S and the base stage of audion T respectively;The emitter stage of described audion S is connected with the emitter stage of described audion T, is connected to resistance R2 between base stage and the emitter stage of described audion S;The colelctor electrode of described audion T is connected with the source electrode of described isolated gate FET Q, is connected to resistance R3 between base stage and the colelctor electrode of described audion T;The gate pole of described isolated gate FET Q is connected with the emitter stage of described audion S and the emitter stage of audion T respectively, the drain electrode of described isolated gate FET Q is connected with one end of described switching winding L, the source electrode of described isolated gate FET Q is connected by the other end of electric capacity C and described switching winding L, is connected to resistance R4 between gate pole and the source electrode of described isolated gate FET Q.
2. a kind of control device based on three-phase current independence zero-crossing switching according to claim 1, it is characterised in that: described isolated gate FET Q is N-channel isolated gate FET.
3. a kind of control device based on three-phase current independence zero-crossing switching according to claim 2, it is characterised in that: that described N-channel isolated gate FET adopts is power MOSFET.
4. a kind of control device based on three-phase current independence zero-crossing switching according to any one of claims 1 to 3, it is characterized in that: described photo-coupler U is made up of photodiode L and audion K, the first input end of the just extremely described photo-coupler of described photodiode L, second input that negative pole is described photo-coupler of described photodiode L, first outfan of the extremely described photo-coupler of current collection of described audion K, the second outfan of the extremely described photo-coupler of transmitting of described audion K.
5. a kind of control device based on three-phase current independence zero-crossing switching according to any one of claims 1 to 3, it is characterized in that: the positive pole of described electric capacity C is connected with described switching winding L, the negative pole of described electric capacity C is connected with the source electrode of described isolated gate FET Q.
CN201620192909.6U 2016-03-14 2016-03-14 Controlling means based on independent zero passage of three phase current is turn -offed Expired - Fee Related CN205385349U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114978137A (en) * 2022-05-05 2022-08-30 北京市科通电子继电器总厂有限公司 Drive control circuit, system and integrated circuit of power switch device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114978137A (en) * 2022-05-05 2022-08-30 北京市科通电子继电器总厂有限公司 Drive control circuit, system and integrated circuit of power switch device

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Granted publication date: 20160713

Termination date: 20200314