CN114978137A - Drive control circuit, system and integrated circuit of power switch device - Google Patents

Drive control circuit, system and integrated circuit of power switch device Download PDF

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Publication number
CN114978137A
CN114978137A CN202210481331.6A CN202210481331A CN114978137A CN 114978137 A CN114978137 A CN 114978137A CN 202210481331 A CN202210481331 A CN 202210481331A CN 114978137 A CN114978137 A CN 114978137A
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power
driving
resistor
circuit
control circuit
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Inventor
曹玉峰
陈志博
焦小宇
张博宇
王珏
郑壮
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BEIJING KEYTONE ELECTRONIC RELAY CORP
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BEIJING KEYTONE ELECTRONIC RELAY CORP
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Priority to CN202210481331.6A priority Critical patent/CN114978137A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention discloses a drive control circuit of a power switch device, which comprises a power supply, a control circuit, a drive module, an operational amplifier circuit, the power switch device, a sampling resistor and a load. The power input positive end of the control circuit and the drive module is connected to the power supply positive electrode, and the power input negative end is connected to the power bus; the analog signal input end of the operational amplifier circuit is connected with the two ends of the sampling resistor, and the analog signal output end of the operational amplifier circuit is connected with the analog signal input end of the control circuit; the driving module is suitable for driving the power switch device to be switched on or switched off according to the driving control signal; the drain electrode of the power switch device is connected to a power bus through a sampling resistor, the grid electrode of the power switch device is connected with the signal output end of the driving module, and the source electrode of the power switch device is connected with a power ground wire through a load. The circuit takes the drain electrode of the power switch device as a reference point, under the condition of multi-path driving, each driving module can share a power supply, and an isolation operational amplifier is omitted, so that the circuit volume is reduced.

Description

Drive control circuit, system and integrated circuit of power switch device
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a drive control circuit, a system and an integrated circuit of a power switch device.
Background
The solid-state power controller is intelligent switch equipment integrating the switching function of a relay and the electric protection function of a circuit breaker, and is widely applied to the field of aerospace power distribution at present, and the field has high requirements on miniaturization and integration level. The single solid-state power controller generally integrates multiple paths of power switch branches capable of being independently driven so as to realize power distribution for multiple electric devices, the traditional mode generally adopts a combination of multiple single paths, each path needs an independent driving power supply, and the reduction of the device volume, the improvement of the power density and the reduction of the cost are not facilitated.
Fig. 1 is a block diagram illustrating a driving control system of a conventional multiple power switching device. As shown in fig. 1, only one independent power supply in the circuit supplies power to the control circuit, and n independent power supplies supply power to each driving circuit, so that independent driving of each power switching device can be realized. The driving mode causes that the sampling signals at two ends of the sampling resistor are not grounded with the power supply of the control circuit, so that the sampling of each path of current can be realized only by n isolating operational amplifiers. In the driving method, the source electrode of each power switch device is taken as a reference point for driving level, and under the condition of a plurality of paths of field effect transistors, the on-off condition of each path is inconsistent, so the source electrode voltage is also inconsistent, an independent floating power supply needs to be added for each path, a sampling circuit needs to isolate an operational amplifier, the hardware cost is high, and the reduction of the circuit volume is not facilitated.
Therefore, it is desirable to provide a driving control circuit and a driving control system for a power switch device, which can independently drive multiple power switch devices with only one power supply, thereby reducing the use of hardware and improving the integration of a solid-state power controller, so as to solve the above problems in the prior art.
Disclosure of Invention
In view of the above, the present solution provides a drive control circuit, a drive control system, and an integrated circuit of a power switching device that overcome or at least partially solve the above problems.
According to one aspect of the invention, a driving control circuit of a power switch device is provided, and the driving control circuit comprises a power supply, a control circuit, a driving circuit and an operational amplifier circuit, wherein the driving circuit comprises a driving module, the power switch device, a sampling resistor and a load. The power source input positive end of the control circuit is connected to a power source positive electrode, the power source input negative end of the control circuit is connected to a power bus, the power source input positive end of the driving module is connected to the power source positive electrode, the power source input negative end of the driving module is connected to the power bus, the analog signal input end of the operational amplifier circuit is connected with two ends of the sampling resistor, the analog signal output end of the operational amplifier circuit is connected with the analog signal input end of the control circuit, the driving module is suitable for driving the power switch device to be switched on or switched off according to the driving control signal, the drain electrode of the power switch device is connected to the power bus through the sampling resistor, the grid electrode of the power switch device is connected with the signal output end of the driving module, and the source electrode of the power switch device is connected with a power ground wire through a load.
The drive control circuit adopts a common field effect transistor drain electrode drive mode, the drain electrode of the power field effect transistor is connected to a power bus through a sampling resistor, the control circuit takes the power bus as a reference ground wire, and a control circuit power supply and a power field effect transistor drive power supply are the same power supply, so that the control circuit power supply and the drive of the power field effect transistor can be realized by only one power supply. The sampling signal at the two ends of the sampling resistor is grounded with the power supply of the control circuit, so that the sampling of each path of current can be realized without isolating the operational amplifier, the number of components can be reduced to the maximum extent, the circuit size is reduced, and the cost is reduced.
Optionally, the power supply includes a driving power supply and a power supply, the power supply is a power supply between the power bus and the power ground and is adapted to supply power to the load, and the driving power supply is a power supply between the positive electrode of the power supply and the power bus and is adapted to supply power to the driving module, the control circuit and the operational amplifier circuit.
Optionally, the power switch device comprises a power field effect transistor and a parasitic diode, and the parasitic diode is connected between the drain and the source of the power field effect transistor in parallel.
Optionally, the driving module includes a first controlled switch and a second controlled switch, and when the driving control signal is at a high level, the first controlled switch is turned on, and the second controlled switch is turned off; when the driving control signal is at a low level, the second controlled switch is turned on, and the first controlled switch is turned off.
Optionally, the driving module further includes a first resistor and a second resistor, the first resistor is connected in series with the first controlled switch, the second resistor is connected in parallel with the second controlled switch, the first resistor is connected in series with the second resistor, and when the first controlled switch is turned on and the second controlled switch is turned off, the power fet is turned on; when the first controlled switch is turned off and the second controlled switch is turned on, the power field effect transistor is turned off.
Optionally, the second resistor is connected in parallel between the source and the gate of the power fet, when current flows through the second resistor, the voltage across the second resistor is suitable for charging the gate-source capacitor in the power fet, and when the voltage across the gate-source capacitor reaches the turn-on voltage, the power fet is turned on.
Optionally, the driving circuit further includes a pull-down resistor, one end of the pull-down resistor is connected to the source of the power field effect transistor, the other end of the pull-down resistor is connected to the power ground, the pull-down resistor is connected in parallel with the load, and when the power field effect transistor is turned off, a path from the source to the drain is formed through the pull-down resistor and the power supply or the load and the power supply; when the power field effect transistor is conducted, a path from the source electrode to the drain electrode is formed through the power field effect transistor and the sampling resistor.
According to another aspect of the present invention, a driving control system of a power switch device is provided, which includes at least two driving circuits connected in parallel between a power bus and a power ground, and a controller, a data selector and at least two operational amplifiers connected in parallel between a power supply positive electrode and the power bus, wherein a control signal input end of the data selector is connected to a control signal output end of the controller, an analog signal input end of the data selector is respectively connected to an output end of each operational amplifier, and a positive input end and a negative input end of the operational amplifier are respectively connected in parallel to two ends of a sampling resistor in a corresponding driving circuit.
According to another aspect of the present invention, there is provided an integrated circuit including the above-mentioned drive control system for a power switching device, wherein the integrated circuit is any one of a solid-state power controller integrated circuit and a solid-state relay integrated circuit.
According to the scheme of the invention, the drive control circuit takes the drain terminal of the power switch device as the reference ground and provides a current path from the positive electrode of the drive power supply to the grid electrode, then to the source electrode and finally back to the drain electrode (the negative electrode of the drive power supply). Compared with the traditional mode, the driving control system of the power switch device provided by the scheme has the advantages that the number of circuit components is greatly reduced, the circuit size is correspondingly reduced, higher power density can be realized, and the integration level of the solid-state power controller is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a block diagram illustrating a driving control system of a conventional multiple power switching device;
fig. 2 shows a circuit block diagram of a drive control system of a power switching device according to an embodiment of the present invention;
fig. 3 shows a circuit block diagram of a drive control circuit of a power switching device according to an embodiment of the present invention;
FIG. 4 illustrates a block circuit diagram of a drive circuit for a power switching device according to one embodiment of the present invention;
fig. 5 shows an equivalent circuit diagram of a driving circuit of a power switching device according to an embodiment of the present invention;
FIG. 6 shows a test circuit diagram of a driver circuit for a field effect transistor according to one embodiment of the present invention;
FIG. 7 shows a waveform of a FET connected through passes DRI1 and OUT 1;
FIG. 8 shows waveforms of the FET turn-off DRI1 and OUT 1;
fig. 9 shows a schematic circuit diagram of a single channel 1 in an 8-channel power distribution combination.
Fig. 10 shows a test waveform diagram of an 8-channel power distribution combination no-load open channel 1;
fig. 11 shows a test waveform diagram of the 8-channel distribution combination no-load shutdown channel 1.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The single solid-state power controller generally integrates multiple paths of power switch branches capable of being independently driven so as to realize power distribution for multiple electric devices, the traditional mode generally adopts a combination of multiple single paths, each path needs an independent driving power supply, and the reduction of the volume, the improvement of the power density and the reduction of the cost are not facilitated. In order to solve the above problems, the scheme provides a drive control system of a power switch device adopting a common field effect transistor drain electrode drive mode, and a plurality of paths of power field effect transistors can be independently driven only by one drive power supply.
Fig. 2 shows a circuit block diagram of a drive control system of a power switching device according to an embodiment of the present invention. As shown in fig. 2, the driving control system of the power switch device includes a plurality of driving circuits connected in parallel between the power bus and the power ground, and a controller MCU, a data selector and a plurality of operational amplifiers (op-amps) connected in parallel between the positive power supply and the power bus, wherein a control signal input terminal of the data selector is connected to a control signal output terminal of the controller, an analog signal input terminal of the data selector is connected to an output terminal of each op-amp, and a positive input terminal and a negative input terminal of each op-amp are connected in parallel to two ends of the sampling resistor in the corresponding driving circuit. The drain electrodes of all the power switching devices are connected to a power bus through a sampling resistor, a controller (MCU) takes the power bus as a reference ground line GND1, a controller power supply and a power field effect transistor driving power supply are the same power supply, and the controller power supply and independent driving of each path of power field effect transistor can be realized by only one power supply. The sampling signals at two ends of the sampling resistor are grounded with the power supply of the controller, namely, the power bus is the reference ground of the power supply, so that the sampling of each path of current can be realized without isolating the operational amplifier. The voltages supplied by the power supply 1 to the controller and the driver circuit may be different but are common to ground and may therefore be collectively referred to as power supply 1. The driving mode of the common field effect transistor drain is adopted, the field effect transistor drain is used as a reference point, all paths can share the driving power supply, and the isolation operational amplifier can be omitted.
The focus of common drain driving is to find a current path from the positive electrode of the driving power supply to the gate, to the source, and finally back to the drain (the negative electrode of the driving power supply), i.e. a driving path. Fig. 3 shows a circuit block diagram of a drive control circuit of a power switching device according to an embodiment of the present invention. As shown in fig. 3, the driving control circuit includes a power supply, a control circuit, a driving circuit and an operational amplifier circuit, wherein the driving circuit includes a driving module, a power switch device, a sampling resistor and a load. The positive end of the power supply input of the control circuit is connected to the positive electrode of the power supply, the negative end of the power supply input of the control circuit is connected to the power bus, the positive end of the power supply input of the driving module is connected to the positive electrode of the power supply, and the negative end of the power supply output of the driving module is connected to the power bus. The driving module is suitable for driving the power switch device to be switched on or switched off according to the driving control signal, the drain electrode of the power switch device is connected to the power bus through the sampling resistor, the grid electrode of the power switch device is connected with the signal output end of the driving module, and the source electrode of the power switch device is connected with the power ground wire through the load. The power supply can comprise a driving power supply and a power supply, the power supply is a power supply between a power bus and a power ground wire and is suitable for supplying power to the power switch device and the load, and the driving power supply is a power supply between a power supply anode and the power bus and is suitable for supplying power to the driving module, the control circuit and the operational amplifier circuit.
To further illustrate the driving principle of the common drain driving of the switching devices, fig. 4 shows a circuit block diagram of a driving circuit of a power switching device according to an embodiment of the present invention. As shown in fig. 4, VCC1_1 is a driving power supply of V11, the value of which can be determined according to the requirement of the fet on the driving voltage, VCC1_2 is high level, DRI1 is the driving control signal, and the reference grounds of VCC1_1, VCC1_2 and DRI1 are all QGND, i.e. power bus. The power switch device V11 may include a power fet and a parasitic diode connected in parallel between the drain and source of the power fet. The driving module comprises a first controlled switch and a second controlled switch, when the driving control signal DRI1 is in a high level, the first controlled switch is turned on, the second controlled switch is turned off, and the power field-effect tube V11 is turned on; when the driving control signal DRI1 is low, the second controlled switch is turned on, the first controlled switch is turned off, and the power fet V11 is turned off. The first controlled switch includes a first photocoupler N11 and a first driving resistor R11, and the first controlled switch and the second controlled switch may be photocouplers or other controlled switching devices.
As shown in fig. 4, the driving module further includes a first resistor R12 and a second resistor R15, the first resistor R12 is connected in series with the first controlled switch, the second resistor R15 is connected in parallel with the second controlled switch, and the first resistor R12 is connected in series with the second resistor R15. The second resistor R15 is connected in parallel between the source and the gate of the power FET, when the current flows in the second resistor R15, the voltage across the second resistor R15 is suitable for charging the capacitor between the gate and the source of the power FET, when the voltage across the gate-source capacitor reaches the turn-on voltage, the power FET V11 is turned on. As shown in fig. 4, the driving circuit further includes a pull-down resistor R16, which is operative to pull down OUT1 to a certain low level when V11 is turned off. One end of the pull-down resistor R16 is connected with the source electrode of the power field effect transistor, the other end of the pull-down resistor R16 is connected with a power ground wire (PGND), the pull-down resistor R16 is connected with the load R1L in parallel, and when the power field effect transistor V11 is turned off, a path from the source electrode to the drain electrode is formed through the pull-down resistor R16 and a power supply or the load R1L and the power supply; when the power fet V11 is turned on, a path from the source to the drain is formed through the power fet V11 and the sampling resistor R1S.
In order to make OUT1 be exactly low when the idle load V11 is turned off, a pull-down resistor R16 is added between OUT1 and PGND, and the parasitic diode is in a reverse bias state and cannot be turned on. However, a path from the source to the drain can be formed by R16 and the power supply, and after the path is formed, the driving power supply can make the voltage on R15 through a driving path of "R12-R15-R16 (or R1L) -power supply-QGND" to charge the V11 gate-source capacitor, and the V11 is turned on. After V11 is turned on, FET V11 and R1S form a channel from source to drain, and the driving channel is changed to a channel mainly "R12-R15-FET-R1S-QGND". The drive path continues to exist, the current at R15 continues to exist, the voltage at R15 continues to exist, and V11 remains on.
Fig. 5 shows an equivalent circuit diagram of a driving circuit of a power switching device according to an embodiment of the present invention, and as shown in fig. 5, R12 ═ 1K, R15 ═ 20K, R16 ═ 10K, and R1S ═ 1m Ω may be given. Wherein R1L is a load, the first controlled switch and the second controlled switch can be equivalent to variable resistors RN11 and RN12, an equivalent model of a power field effect transistor is arranged in a dotted line frame, CGS is a parasitic capacitor between a gate and a source, RDS is an equivalent resistor between a drain and a source, and VP is a parasitic diode of the field effect transistor, wherein the CGS and the RDS have a coupling relation: RDS decreases rapidly when the voltage UGS across the CGS rises close to the vgs (th) turn-on voltage. The VGS (th) of V11 is 2-4V for analysis. Definitions "R12-R15-R16-Power supply-QGND" is "drive channel 1", "R12-R15-RDS-R1S-QGND" is "drive channel 2", and "R12-R15-VP-R1S-QGND" is "drive channel 3".
When the driving circuit is connected with a rated load, namely R1L is equal to 0.35 omega, RDS + RS is equal to 3m omega when only a 12V driving power supply acts on the circuit according to the superposition theoremIs normally much less than R16// R1L, and therefore
Figure BDA0003627985420000061
When only a 28V power supply is applied to the circuit, since RDS + RS ≈ 3m Ω is much smaller than the sum of R12 and R15, therefore:
Figure BDA0003627985420000062
total current flowing through the field effect transistor: i is 2 =I 2P +I 2Q =79.32A
At the moment, VP is also reversely biased and is not conducted, the field tube is mainly driven to be conducted through the driving channel 2, and finally the grid source voltage V of the field tube GS =I 1Q ×R 15 The field tube maintains the on state at 11.4V.
And (3) a turn-off process: the first controlled switch N11 is turned off and N12 is turned on, RN11 rapidly increases to megaohms and RN12 rapidly decreases to near zero, discharge occurs between gate G and source S through RN12, and the FET is turned off.
Fig. 6 shows a test circuit diagram of a driving circuit of a field effect transistor according to an embodiment of the present invention. As shown in fig. 6, where the driving power is +12V and the power supply is +28V, the waveform of DRI1 (for QGND) and the waveform of OUT1 (for PGND) are measured at the instant the power fets are turned on and off. Fig. 7 shows waveforms of fet pass-through DRI1 and OUT1, and fig. 8 shows waveforms of fet turn-off DRI1 and OUT 1. As can be seen from fig. 7 and 8, the fet can be normally driven on and off. Under the test conditions, the on-time of the fet is about 60us and the off-time is about 26 us.
Next, an 8-channel power distribution combination (rated current 80A) will be described as an example, in which common-drain driving is performed between channels of the power distribution combination, and common-drain driving is performed between power and current limiting branches within a single channel, so that it is equivalent to study of common-drain driving methods for two branches within a single channel and for studying each channel of the power distribution combination. Fig. 9 shows a schematic circuit diagram of a single channel 1 in an 8-channel power distribution combination. As shown in FIG. 9, the channel comprises a power branch formed by connecting V11_1 and V11_2 in parallel and a current limiting branch formed by V1_1, wherein V11_1 and V11_2 are controlled by a driving control signal DRI1, and V1_1 is controlled by the driving signal DRI _ 1. V11_1 and V11_2 are regarded as a whole V11, and the drains of V11 and V1_1 are connected to a power bus through sampling resistors, and belong to a typical common field transistor drain driving mode. By means of the power distribution combination external CAN bus and the internal DSP control channel opening and closing, voltage waveforms of two branch control signals (a power branch VDRI1 and a current-limiting branch VDRI _1) and voltage waveforms of a grid electrode to a source electrode (a power branch VGS1 and a current-limiting branch VGS _1) under different working conditions are tested respectively. QGND is the power supply +12V, +3.3V and the reference ground for the drive control signals VDRI1, VDRI _1 and is also the power bus, and the voltage difference between the power bus and the power ground is 28V. When the power branch is switched on, the control signal DRI1 is set to be high level, the N11 is switched on, the N12 is switched off, the voltage is obtained from the R15, the grid source capacitor of the field tube is charged, and the field tube is switched on. When the circuit is switched off, the control signal DRI1 is set to be at a low level, the N12 is switched on and switched off with the N11, the output triode of the N12 and the resistor R13 form a V11 grid-source discharge path, and the field tube is rapidly switched off, so that the field tube can be prevented from being damaged by instantaneous high power during short-circuit protection. The turn-on and turn-off process of the current limiting branch is similar to that of the power branch.
A high-power transient suppression diode is arranged between a drain electrode and a source electrode of the power field effect transistor to suppress peak voltage, and a fast recovery diode is arranged between OUT and a power ground wire.
Fig. 10 shows a test waveform diagram of an 8-channel power distribution combination no-load open channel 1. Before the channel is turned on, VDRI _1 and VDRI1 are low, and VGS1 and VGS _1 are 0. When the channel is opened, firstly, VDRI _1 is set to high (+3.3V), the first controlled switch N11 is turned on, and at the same time, N12 is turned off, and when VGS _1 is about 11.4V, the current limiting branch is turned on. After the current limiting branch is switched on for 1ms, VDRI1 is set high, VGS1 rises to 11.4V, and the power branch is switched on. Fig. 11 shows a test waveform diagram of the 8-channel distribution combination no-load shutdown channel 1. Before the channel 1 is turned off, VDRI1 and VDRI _1 are high (+3.3V), and VGS1 and VGS _1 are about 11.4V. When the channel 1 is turned off, the VDRI1 is set to be low level, the photoelectric coupler N12 is turned on, the N11 is turned off, the gate-source capacitor of the V11 discharges, the VGS1 drops to 0, and the power branch is turned off. After the power branch is disconnected for 1ms, VDRI _1 is set to be low level, VGS _1 is reduced to 0, and the current limiting branch is disconnected.
The tests show that the drain electrode driving mode of the common field effect transistor can realize the independent driving of the multiple paths of field effect transistors by only one driving power supply. Compared with the traditional mode, the common-field transistor drain electrode driving mode greatly reduces the number of circuit components, correspondingly reduces the circuit volume, can realize higher power density and meets the development trend of miniaturization.
The drive control circuit of the power switch device provided by the application takes the drain terminal of the power switch device as the reference ground, provides a current path from the positive electrode of the drive power supply to the grid electrode, then to the source electrode and finally back to the drain electrode (the negative electrode of the drive power supply), and under the condition of multi-path drive, only one drive power supply is needed to realize the independent drive of the multi-path power switch device. Compared with the traditional mode, the driving control system of the power switch device provided by the scheme has the advantages that the number of circuit components is greatly reduced, the circuit size is correspondingly reduced, higher power density can be realized, and the integration level of the solid-state power controller is further improved.
The embodiment of the invention also provides an integrated circuit, which comprises the drive control system of the power switch device, wherein the integrated circuit can be an integrated circuit or a singlechip circuit of a solid-state relay, a solid-state power controller and/or the power switch device. The driving control circuit provided by the invention saves components of a multi-path solid-state power controller and a solid-state relay to the maximum extent, thereby reducing the volume to the maximum extent. The technology can be applied to the related field as a curing technology, so that modularization of the technology is realized, and improvement of the research and development period and efficiency of a new product is facilitated.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments may be used in any combination.
As used herein, unless otherwise specified the use of the ordinal adjectives "first", "second", "third", etc., to describe a common object, merely indicate that different instances of like objects are being referred to, and are not intended to imply that the objects so described must be in a given sequence, either temporally, spatially, in ranking, or in any other manner.
While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of this description, will appreciate that other embodiments can be devised which do not depart from the scope of the invention as described herein. Furthermore, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes, and may not have been selected to delineate or circumscribe the inventive subject matter. Accordingly, many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the appended claims. The present invention has been disclosed in an illustrative rather than a restrictive sense with respect to the scope of the invention, as defined in the appended claims.

Claims (9)

1. A drive control circuit of a power switch device comprises a power supply, a control circuit, a drive circuit and an operational amplifier circuit, wherein the drive circuit comprises a drive module, the power switch device, a sampling resistor and a load,
the power source input positive end of the control circuit is connected to a power source positive electrode, the power source input negative end of the control circuit is connected to a power bus, the power source input positive end of the driving module is connected to the power source positive electrode, the power source input negative end of the driving module is connected to the power bus, the analog signal input end of the operational amplifier circuit is connected to two ends of the sampling resistor, the analog signal output end of the operational amplifier circuit is connected to the analog signal input end of the control circuit, the driving module is suitable for driving the power switch device to be switched on or switched off according to a driving control signal, the drain electrode of the power switch device is connected to the power bus through the sampling resistor, the grid electrode of the power switch device is connected with the signal output end of the driving module, and the source electrode of the power switch device is connected to a power ground wire through a load.
2. The driving control circuit according to claim 1, wherein the power supply comprises a driving power supply and a power supply, the power supply is a power supply between the power bus and a power ground and is adapted to supply power to the load, and the driving power supply is a power supply between a power supply anode and the power bus and is adapted to supply power to the driving module, the control circuit and the operational amplifier circuit.
3. The driving control circuit according to claim 1, wherein the power switch device comprises a power fet and a parasitic diode connected in parallel between a drain and a source of the power fet.
4. The driving control circuit according to claim 1, wherein the driving module comprises a first controlled switch and a second controlled switch, and when the driving control signal is at a high level, the first controlled switch is turned on, and the second controlled switch is turned off; when the driving control signal is in a low level, the second controlled switch is switched on, and the first controlled switch is switched off.
5. The driving control circuit according to claim 4, wherein the driving module further comprises a first resistor and a second resistor, the first resistor is connected in series with the first controlled switch, the second resistor is connected in parallel with the second controlled switch, the first resistor is connected in series with the second resistor, and when the first controlled switch is turned on and the second controlled switch is turned off, the power fet is turned on; when the first controlled switch is turned off and the second controlled switch is turned on, the power field effect transistor is turned off.
6. The driving control circuit according to claim 5, wherein the second resistor is connected in parallel between the source and the gate of the power fet, and when current flows through the second resistor, a voltage across the second resistor is adapted to charge a gate-source capacitor in the power fet, and when a voltage across the gate-source capacitor reaches a turn-on voltage, the power fet is turned on.
7. The driving control circuit according to claim 6, wherein the driving circuit further comprises a pull-down resistor, one end of the pull-down resistor is connected to the source of the power fet, the other end of the pull-down resistor is connected to a power ground, the pull-down resistor is connected in parallel with the load, and when the power fet is turned off, a path from the source to the drain is formed by the pull-down resistor and the power source or the load and the power source; when the power field effect transistor is conducted, a path from the source electrode to the drain electrode is formed through the power field effect transistor and the sampling resistor.
8. A drive control system of a power switch device, characterized by comprising at least two drive circuits as claimed in any one of claims 1 to 7 connected in parallel between a power bus and a power ground, and a controller, a data selector and at least two operational amplifiers connected in parallel between a power supply positive electrode and the power bus, wherein a control signal input end of the data selector is connected with a control signal output end of the controller, an analog signal input end of the data selector is respectively connected with an output end of each operational amplifier, and a positive input end and a negative input end of each operational amplifier are respectively connected in parallel with two ends of a sampling resistor in the corresponding drive circuit.
9. An integrated circuit comprising the drive control system for a power switching device of claim 8, the integrated circuit comprising any one of a solid state power controller integrated circuit and a solid state relay integrated circuit.
CN202210481331.6A 2022-05-05 2022-05-05 Drive control circuit, system and integrated circuit of power switch device Pending CN114978137A (en)

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