CN205319276U - 100 10dB's made of baked clay of 4GHz power thick film circuit decay piece - Google Patents
100 10dB's made of baked clay of 4GHz power thick film circuit decay piece Download PDFInfo
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- CN205319276U CN205319276U CN201521079815.XU CN201521079815U CN205319276U CN 205319276 U CN205319276 U CN 205319276U CN 201521079815 U CN201521079815 U CN 201521079815U CN 205319276 U CN205319276 U CN 205319276U
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- thick film
- 4ghz
- film circuit
- membranaceous resistance
- resistance
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Abstract
The utility model discloses a 100 10dB's made of baked clay of 4GHz power thick film circuit decay piece, thick film circuit decay piece includes a berillia base plate, berillia back of the substrate does not have circuit non metallization, the berillia base plate openly is equipped with input electrode, output electrode, film resistors, an earth conductor and the 2nd earth conductor, input electrode and output electrode are connected the card formula that forms attenuation network with film resistors respectively, an earth conductor and the 2nd earth conductor are connected respectively to the film resistors both ends, film resistors's output is connected with the first silver that bakes over a slow fire, film resistors's input is connected with the second and bakes silver over a slow fire. The utility model discloses simple structure, convenient to use, small, decay good resistance precision of flatness and attenuation accuracy are high, the good reproducibility.
Description
Technical field
This utility model relates to a kind of beryllium oxide ceramics substrate attenuator, particularly to the attenuator of a kind of 100 watts of 10dB of beryllium oxide ceramics substrate.
Background technology
The attenuator of 100 watts of 10dB of beryllium oxide ceramics substrate is the one of coaxial fixed attentuator chip, is widely used in the equipment such as microwave communication, radar. Attenuator is a power consumption and Circuit Matching element, it is desirable to the impact of two terminal circuits is the smaller the better. 2GHz can be reached for powerful attenuator precision and standing-wave ratio minority in the market, will accomplish that the higher frequencies such as 4GHz are extremely difficult.
Utility model content
This utility model is in order to solve the problems referred to above, thus providing the attenuator of a kind of 100 watts of 10dB of beryllium oxide ceramics substrate.
For reaching above-mentioned purpose, the technical solution of the utility model is as follows:
A kind of thick film circuit attenuator of 100 watts of 10dB of 4GHz power, described thick film circuit attenuator includes a beryllium oxide substrate, described beryllium oxide substrate back is non-metallic without circuit, described beryllium oxide substrate front side is provided with input electrode, output electrode, membranaceous resistance, first earth lead and the second earth lead, described input electrode and output electrode are connected formation card form attenuation network respectively with membranaceous resistance, described membranaceous resistance two ends connect the first earth lead and the second earth lead respectively, the outfan of described membranaceous resistance is connected to the first roasting silver, the input of described membranaceous resistance is connected to the second roasting silver.
In a preferred embodiment of the present utility model, described membranaceous resistance carries out laser resistor trimming by laser resistance adjuster, and described membranaceous resistance input and outfan are 50 ± 1 Ω with the impedance of earth terminal respectively.
In a preferred embodiment of the present utility model, describedization beo substrate volume is 25.5*25.5*3.2mm.
In a preferred embodiment of the present utility model, described membranaceous resistance is made by thick-film technique, and the characteristic impedance of described thick film circuit attenuator is 50 Ω, frequency be 4GHz, power capacity is 100W.
In a preferred embodiment of the present utility model, described membranaceous resistance is positioned at the center of beryllium oxide substrate, and described membranaceous resistance is symmetrical structure.
The beneficial effects of the utility model are:
This utility model simple in construction, easy to use, volume is little, and the decay good resistance accuracy of flatness and attenuation accuracy are high, reproducible.
This utility model can be widely applied to the production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is structural representation of the present utility model.
Detailed description of the invention
For the technological means making this utility model realize, creation characteristic, reach purpose and effect and be easy to understand, below in conjunction with being specifically illustrating, this utility model is expanded on further.
Referring to Fig. 1, the thick film circuit attenuator of 100 watts of 10dB of 4GHz power that this utility model provides, it includes a beryllium oxide substrate 100.
The volume of beryllium oxide substrate 100 is specially 25.5*25.5*3.2mm, and its back side is non-metallic without circuit, is provided with input electrode 200, output electrode 300, membranaceous resistance the 400, first earth lead 500 and the second earth lead 600 in its front.
Input electrode 200 and output electrode 300 are symmetrically arranged at the left and right sides of membranaceous resistance 400, and membranaceous resistance 400 can form a card form attenuation network with input electrode 200 and output electrode 300, so can reach standing wave little, the requirement of bandwidth.
First earth lead 500 and the second earth lead 600 connect the two ends up and down of membranaceous resistance 400, and membranaceous resistance 400 is by the first earth lead 500 and the second earth lead 600 earth-continuity.
Membranaceous resistance 400, it is made by thick-film technique, its outfan is connected to the first roasting silver 700, input is connected to the second roasting silver 800, it carries out laser resistor trimming by laser resistance adjuster, its input and outfan are 50 ± 1 Ω with the impedance of earth terminal respectively, and so making the characteristic impedance of thick film circuit attenuator to be 50 Ω, frequency be 4GHz, power capacity is 100W.
Additionally, membranaceous resistance 400 is positioned at the center of beryllium oxide substrate 100, and membranaceous resistance 400 is symmetrical structure, so owing to input electrode 200 and output electrode 300 are symmetrically arranged at the left and right sides of membranaceous resistance 400, first earth lead 500 and the second earth lead 600 connect the two ends up and down of membranaceous resistance 400, the attenuator circuit making thick film circuit attenuator is in a full symmetric state, the decay flatness so making thick film circuit attenuator is good, resistance accuracy and attenuation accuracy are high, reproducible.
Of the present utility model ultimate principle and principal character and of the present utility model advantage have more than been shown and described. Skilled person will appreciate that of the industry; this utility model is not restricted to the described embodiments; described in above-described embodiment and description is that principle of the present utility model is described; under the premise without departing from this utility model spirit and scope; this utility model also has various changes and modifications, and these changes and improvements both fall within the scope of claimed this utility model. This utility model claims scope and is defined by appending claims and equivalent thereof.
Claims (5)
1. the thick film circuit attenuator of 100 watts of 10dB of a 4GHz power, it is characterized in that, described thick film circuit attenuator includes a beryllium oxide substrate, described beryllium oxide substrate back is non-metallic without circuit, described beryllium oxide substrate front side is provided with input electrode, output electrode, membranaceous resistance, first earth lead and the second earth lead, described input electrode and output electrode are connected formation card form attenuation network respectively with membranaceous resistance, described membranaceous resistance two ends connect the first earth lead and the second earth lead respectively, the outfan of described membranaceous resistance is connected to the first roasting silver, the input of described membranaceous resistance is connected to the second roasting silver.
2. the thick film circuit attenuator of a kind of 100 watts of 10dB of 4GHz power according to claim 1, it is characterized in that, described membranaceous resistance carries out laser resistor trimming by laser resistance adjuster, and described membranaceous resistance input and outfan are 50 ± 1 Ω with the impedance of earth terminal respectively.
3. the thick film circuit attenuator of a kind of 100 watts of 10dB of 4GHz power according to claim 1, it is characterised in that describedization beo substrate volume is 25.5*25.5*3.2mm.
4. the thick film circuit attenuator of a kind of 100 watts of 10dB of 4GHz power according to claim 1, it is characterized in that, described membranaceous resistance is made by thick-film technique, and the characteristic impedance of described thick film circuit attenuator is 50 Ω, frequency be 4GHz, power capacity is 100W.
5. the thick film circuit attenuator of a kind of 100 watts of 10dB of 4GHz power according to claim 1, it is characterised in that described membranaceous resistance is positioned at the center of beryllium oxide substrate, and described membranaceous resistance is symmetrical structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521079815.XU CN205319276U (en) | 2015-12-22 | 2015-12-22 | 100 10dB's made of baked clay of 4GHz power thick film circuit decay piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521079815.XU CN205319276U (en) | 2015-12-22 | 2015-12-22 | 100 10dB's made of baked clay of 4GHz power thick film circuit decay piece |
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| Publication Number | Publication Date |
|---|---|
| CN205319276U true CN205319276U (en) | 2016-06-15 |
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| CN201521079815.XU Active CN205319276U (en) | 2015-12-22 | 2015-12-22 | 100 10dB's made of baked clay of 4GHz power thick film circuit decay piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113922029A (en) * | 2021-10-09 | 2022-01-11 | 苏州市新诚氏通讯电子股份有限公司 | Thin film microwave attenuation sheet based on ferrite |
-
2015
- 2015-12-22 CN CN201521079815.XU patent/CN205319276U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113922029A (en) * | 2021-10-09 | 2022-01-11 | 苏州市新诚氏通讯电子股份有限公司 | Thin film microwave attenuation sheet based on ferrite |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |