CN205264754U - 一种高白光低光衰led - Google Patents

一种高白光低光衰led Download PDF

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CN205264754U
CN205264754U CN201620005254.7U CN201620005254U CN205264754U CN 205264754 U CN205264754 U CN 205264754U CN 201620005254 U CN201620005254 U CN 201620005254U CN 205264754 U CN205264754 U CN 205264754U
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洪汉忠
许长征
梁涛
林纬正
曾志坚
何玉香
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Harvatek Optoelectronics Shenzhen Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

本实用新型公开了一种高白光低光衰LED,所述LED包括LED支架,所述LED支架为方形,在其内部开有方形槽,该方形槽分上下两层,下层方形槽与上层方形槽的边缘形成一个直角形台阶,在上层方形槽的四个角部,各设置一个圆柱孔,该圆柱孔的底面与上层方形槽的底面相平,且该圆柱孔开有一个缺口,该缺口连通上层方形槽,所述圆柱孔的底面开有一个圆柱小孔,该圆柱小孔连通至下层方形槽的角部,本实用新型高白光低光衰LED结构解决LED白光黄圈问题,同解决LED白光亮度衰减的问题。

Description

一种高白光低光衰LED
技术领域
本实用新型涉及LED领域,具体的说是涉及一种高白光低光衰LED。
背景技术
发光二极管(LED)是一种半导体光源,LED与其它光源诸如白炽灯相比具有很多优点,LED通常具有较长的寿命、较好的稳定性、较快的开关特性以及较低的能耗。随着LED作为新一代光源日益深入人们的生活,其应用也越来越广泛。在合成白光方面,最常用的方式是在发蓝光的LED晶片上放置波长转换材料,例如黄色荧光粉,在LED晶片上的波长转换材料层会吸收一些LED发出的光子,并将它们向下转换(down-convert)为可见光波长的光,从而产生具有蓝色和黄色波长光的双色光源。如果产生的黄光和蓝光有正确的比例,那么人眼会感受到白光。
在现有技术中,LED的封装工艺一般包括固晶、焊线、涂胶、烘烤等步骤,其中涂胶步骤通常将荧光粉按照一定比例混合在硅胶中,用过点胶设备将荧光粉与胶的混合物涂覆在LED晶片上,然而,大粒径荧光粉在点胶过程中容易出现荧光粉沉降的问题,使得荧光粉在胶体中的分布不均匀,由此导致封装出的白光LED出现颜色偏差,就是通常所说的黄圈现象。在其它技术方案中,涂胶也可以通过保型涂覆技术LED晶片表面涂覆非常均匀的荧光粉层,但是,由于蓝光LED晶片本身的发光强度在空间的分布具有不等值的特点对于保型涂覆而言,强度值较大的蓝光通过中心区域荧光粉层的距离比通过边缘区域荧光粉层的距离短,由此导致中心区域色温值高而边缘区域色温值低,同样会出现颜色偏差的问题。而荧光粉物质大部分集中在支架凹槽底部和LED芯片附件,长期受热会出现亮度衰减,影响LED寿命。
如图1所示的传统的白光LED封装结构示意图,传统的白光LED由第一LED芯片11安装在第一支架12的碗杯内,通过第一金线13与第一支架12引脚实现电路连接,然后在第一LED芯片11表面覆盖上封装胶体14,封装胶体14一般由激发黄色波长荧光粉和封装胶混合而成,有时会添加激发橙红色或绿色波长荧光粉。荧光粉吸收部分蓝光后,释放出波长较长的黄光,然后未被吸收的蓝光和黄光混合成白光。白光LED混光不够均匀,亮度也比较低,荧光粉物质大部分集中在支架凹槽底部和LED芯片附件,长期受热会出现亮度衰减,影响LED寿命。
实用新型内容
针对现有技术中的不足,本实用新型要解决的技术问题在于提供了一种高白光低光衰LED。
为解决上述技术问题,本实用新型通过以下方案来实现:一种高白光低光衰LED,所述LED包括LED支架,所述LED支架为方形,在其内部开有方形槽,该方形槽分上下两层,下层方形槽与上层方形槽的边缘形成一个直角形台阶,在上层方形槽的四个角部,各设置一个圆柱孔,该圆柱孔的底面与上层方形槽的底面相平,且该圆柱孔开有一个缺口,该缺口连通上层方形槽,所述圆柱孔的底面开有一个圆柱小孔,该圆柱小孔连通至下层方形槽的角部,所述下层方形槽底面的中心处,固定有LED芯片,所述LED芯片的电极与LED支架的正负极通过金线连接起来,在上层方形槽上,固定有环氧树脂片,在环氧树脂片下部的下层方形槽空腔中,填充有封装硅胶,且该封装硅胶填充于圆柱孔及圆柱孔下部的圆柱小孔,所述环氧树脂片下层涂有荧光粉层。
相对于现有技术,本实用新型的有益效果是:本实用新型高白光低光衰LED结构解决LED白光黄圈问题,同解决LED白光亮度衰减的问题。
附图说明
图1为现有技术中的白光LED封装结构示意图。
图2为本实用新型LED支架结构示意图。
图3为本实用新型LED支架侧面剖视图。
图4为本实用新型LED制备方法步骤5示意图。
图5为本实用新型LED制备方法步骤6示意图1。
图6为本实用新型LED制备方法步骤6示意图2。
图7为本实用新型LED制备方法步骤7示意图。
图8为本实用新型LED制备方法步骤8示意图。
附图中标记:第一LED芯片11、第一支架12、第一金线13、封装胶体14、LED支架1、直角形台阶2、圆柱孔3、金线4、LED芯片5、环氧树脂片6。
具体实施方式
下面结合附图对本实用新型的优选实施例进行详细阐述,以使本实用新型的优点和特征能更易于被本领域技术人员理解,从而对本实用新型的保护范围做出更为清楚明确的界定。
请参照附图2~4,本实用新型一种高白光低光衰LED,所述LED包括LED支架1,其特征在于:所述LED支架1为方形,在其内部开有方形槽,该方形槽分上下两层,下层方形槽与上层方形槽的边缘形成一个直角形台阶2,在上层方形槽的四个角部,各设置一个圆柱孔3,该圆柱孔的底面与上层方形槽的底面相平,且该圆柱孔3开有一个缺口,该缺口连通上层方形槽,所述圆柱孔3的底面开有一个圆柱小孔,该圆柱小孔连通至下层方形槽的角部,所述下层方形槽底面的中心处,固定有LED芯片5,所述LED芯片5的电极与LED支架1的正负极通过金线4连接起来,在上层方形槽上,固定有环氧树脂片6,在环氧树脂片6下部的下层方形槽空腔中,填充有封装硅胶14,且该封装硅胶14填充于圆柱孔3及圆柱孔3下部的圆柱小孔,所述环氧树脂片6下层涂有荧光粉层。
实施例:
本实用新型的高白光低光衰LED的制备方法,该方法包括以下步骤:
1、如图2所示,选择方形的LED支架,将该LED支架开两个方形凹槽,该方形槽分上下两层,下层方形槽与上层方形槽相通,在两个方形槽边缘形成一个直角形台阶2,下层方形槽与上层方形槽的高度依据实际的LED芯片功率决定。
2、如图3所示,在上层方形槽的四个角部,各设置一个圆柱孔3,该圆柱孔的底面与上层方形槽的底面相平,且该圆柱孔3开有一个缺口,该缺口连通上层方形槽;
3、如图3所示,圆柱孔3的底面开有一个圆柱小孔,该圆柱小孔连通至下层方形槽的角部,也可以将圆柱小孔连通至下层方形槽的底部;
4、将环氧树脂粉加入荧光粉均匀搅拌后,模压成圆饼形状后,切割成与上层方形槽大小对应的环氧树脂片,并且在环氧树脂片的一面涂有荧光粉层;
5、如图4所示,在LED支架1的下层方形槽底面中心处固晶焊线,将LED芯片5安装在LED支架1的下层方形槽底面中心位置,再将LED芯片5的电极与LED支架1的正负极通过金线4连接起来;
6、如图5所示,将步骤4中的模压成圆饼状后的环氧树脂片放置在上层方形凹槽处的直角形台阶2上;
7、如图6-7所示,将液态封装硅胶14通过四个圆柱孔3、圆柱小孔注满环氧树脂片下部的下层方形凹槽空腔,并且将四个圆柱孔3、圆柱小孔注满;
8、如图8所示,对LED支架1进行压边,以固定环氧树脂片,待液态封装硅胶14完全固化后,封装完成。
本实用新型高白光低光衰LED结构解决LED白光黄圈问题,同解决LED白光亮度衰减的问题。
以上所述仅为本实用新型的优选实施方式,并非因此限制本实用新型的专利范围,凡是利用本实用新型说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其它相关的技术领域,均同理包括在本实用新型的专利保护范围内。

Claims (1)

1.一种高白光低光衰LED,所述LED包括LED支架(1),其特征在于:所述LED支架(1)为方形,在其内部开有方形槽,该方形槽分上下两层,下层方形槽与上层方形槽的边缘形成一个直角形台阶(2),在上层方形槽的四个角部,各设置一个圆柱孔(3),该圆柱孔的底面与上层方形槽的底面相平,且该圆柱孔(3)开有一个缺口,该缺口连通上层方形槽,所述圆柱孔(3)的底面开有一个圆柱小孔,该圆柱小孔连通至下层方形槽的角部,所述下层方形槽底面的中心处,固定有LED芯片(5),所述LED芯片(5)的电极与LED支架(1)的正负极通过金线(4)连接起来,在上层方形槽上,固定有环氧树脂片(6),在环氧树脂片(6)下部的下层方形槽空腔中,填充有封装硅胶(14),且该封装硅胶(14)填充于圆柱孔(3)及圆柱孔(3)下部的圆柱小孔,所述环氧树脂片(6)下层涂有荧光粉层。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514248A (zh) * 2016-01-06 2016-04-20 宏齐光电子(深圳)有限公司 一种高白光低光衰led及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514248A (zh) * 2016-01-06 2016-04-20 宏齐光电子(深圳)有限公司 一种高白光低光衰led及其制备方法

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