CN205211717U - Supply liquid device and wet etching equipment - Google Patents
Supply liquid device and wet etching equipment Download PDFInfo
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- CN205211717U CN205211717U CN201521076468.5U CN201521076468U CN205211717U CN 205211717 U CN205211717 U CN 205211717U CN 201521076468 U CN201521076468 U CN 201521076468U CN 205211717 U CN205211717 U CN 205211717U
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Abstract
The utility model provides a supply liquid device and wet etching equipment, confession liquid device includes the feed pipe way and the drawing liquid pump of setting on the feed pipe way of reservoir, nozzle, intercommunication nozzle and reservoir, still including siphon chamber, the siphon piping that communicate siphon chamber and nozzle, setting siphon control valve, the thread flow in pipes that communicate siphon chamber and drawing liquid pump and setting the auxiliary valve on thread flow in pipes on siphon piping of setting in the reservoir, the one end setting that the siphon chamber is connected to the thread flow in pipes is in communicate on the siphon piping between siphon control valve and the siphon chamber and with the siphon piping, the minimum of nozzle is higher than the peak in siphon chamber. Supply the liquid device to utilize the siphonage between the nozzle of siphon chamber and eminence, come to the nozzle on every side the weeping carry out the negative pressure siphon, make it no longer drip, avoid causing the pollution, still utilize this siphonage to make liquid reflux to the siphon chamber in the nozzle, avoid frequently changing the technology cost of suck -back valve.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, particularly relates to a kind of liquid feed device and wet-method etching equipment.
Background technology
Semiconductor fabrication process is a kind of plane manufacturing process, and this technique, in conjunction with photoetching, etching, deposition, ion implantation kinds of processes, needs to form a large amount of various types of complex devices on the same substrate, and is connected to each other to have complete electric property.Wherein, there is deviation in arbitrary technique, all will cause the performance parameter off-design value of circuit.At present, along with the device feature size of very lagre scale integrated circuit (VLSIC) constantly reduces, integrated level improves constantly, and has higher requirement to the control of each step process and the accuracy of process results thereof.For etching technics, in IC manufacturing, often need to utilize lithographic technique to form various etching pattern, as contact hole, via hole image, trench isolations figure or gate patterns, if there is deviation because controlling the improper characteristic size of above-mentioned etched features that makes, then will directly have influence on the performance of circuit, reduce the rate of finished products of product.Etching comprises dry etching and wet etching.Described wet etching (comprising wet-cleaned) mainly contains following effect in chip manufacturing proces, first cleaning wafer, reduces pollution and the defect of wafer; It two is some specific film of non-selective etch, enumerating of typicalness, and as the etching of silicon nitride sacrificial layers in shallow ditch groove separation process, and shallow trench isolation is from the adjustment etching etc. of middle shoulder height (stepheight) oxidation film.
Traditional wet-method etching equipment is batch Semiconductor substrate wet-method etching equipment, and wet-method etching equipment comprises multiple rinse bath, a collection of Semiconductor substrate of single treatment (a collection of Semiconductor substrate is 25) in same rinse bath.Batch Semiconductor substrate wet-method etching equipment utilizes the mode of isopropyl alcohol (IPA) heat atomization to carry out drying to Semiconductor substrate usually, above-mentioned drying mode have residual without washmarking, without advantages such as accumulation of static electricity, but utilize batch Semiconductor substrate wet-method etching equipment to have the problems such as acid solution cross pollution, ion or metallic pollution.Along with constantly reducing of integrated circuit technique node, monolithic semiconductor substrate wet-method etching equipment is utilized to be more and more the trend of wet etching.Monolithic semiconductor substrate wet-method etching equipment, for batch Semiconductor substrate wet-method etching equipment, is removed grain defect ability good, and is that monolithic list chamber etches, avoid the mutual pollution of acid solution, ion or metallic pollution less.
Please refer to Figure 1A and 1B, existing monolithic semiconductor substrate wet-method etching equipment, comprise: reservoir (tank) 100, tapping valve (drainvalve) 101, drawing liquid pump (pump) 102, suck-back valve (Suckbackvalve, SBV) 103, suck-back nozzle (Suckbacknozzle) 104 and high liquid level sensor (fullsensor) 105, low liquid level sensor (emptysensor) 106.Store in reservoir 100 and supply wet-etching technology etching liquid (originaldispense) used, drawing liquid pump 102 connects reservoir 100, improve hydraulic pressure, and the etching liquid in reservoir 100 is drawn in feed liquid pipeline 107, suck-back valve 103 is arranged on feed liquid pipeline 107, during the valve open of suck-back valve 103 (please refer to Figure 1A), etching liquid can be delivered to suck-back nozzle 104 place, during the valve closing of suck-back valve 103 (please refer to Figure 1B), etching liquid is stoped to be delivered to suck-back nozzle 104.Suck-back nozzle 104 is arranged on the wafer side that is etched, and moves up and down, so that etching liquid spray form ground is evenly sprayed to the crystal column surface that is etched.
But utility model people finds, current this wet-method etching equipment, exists following defect:
1, various acid solution is usually adopted in wet etching (comprising wet-cleaned), in etching or cleaning process, especially under the condition that temperature is higher, acid solution volatilization produces acid mist, and acid mist easily condensation formation leakage or crystallization (chemicalliquidleakissue.) around suck-back nozzle place, along with moving up and down of suck-back nozzle, these leakages or crystallization will certainly be dropped on wafer again, cause wafer contamination, cause waste paper, reduce wafer yield.
2, the useful life of suck-back valve relatively whole wet-method etching equipment, very short, be easy to aging, usually only can use about 6 months, the suck-back valve that must more renew afterwards, causes equipment cost to waste.
Therefore, need a kind of liquid feed device and wet-method etching equipment, the leakage of nozzle place can be avoided to drop onto crystal column surface and pollute, greatly can reduce process costs simultaneously.
Utility model content
The purpose of this utility model is to provide a kind of liquid feed device and wet-method etching equipment, and the leakage of nozzle place can be avoided to drop onto crystal column surface and pollute, and greatly can reduce process costs simultaneously.
For solving the problem, the utility model proposes a kind of liquid feed device, comprise reservoir, nozzle, the feed liquid pipeline being communicated with described nozzle and described reservoir and the drawing liquid pump be arranged on described feed liquid pipeline, wherein, described liquid feed device also comprises the siphon chamber be arranged in described reservoir, be communicated with the siphon piping of described siphon chamber and described nozzle, be arranged on the siphon control valve on described siphon piping, the thread flow in pipes being communicated with described siphon chamber and described drawing liquid pump and the auxiliary valve be arranged on described thread flow in pipes, one end that described thread flow in pipes connects described siphon chamber to be arranged on the siphon piping between described siphon control valve with described siphon chamber and to be communicated with described siphon piping, the minimum point of described nozzle is higher than the peak in described siphon chamber.
Further, also reflux line is provided with between described drawing liquid delivery side of pump and described reservoir.
Further, the difference in height between the minimum point of described nozzle and the peak in described siphon chamber is 1 meter ~ 5 meters.
Further, the difference in height between the minimum point of described nozzle and the peak in described siphon chamber is 3 meters.
Further, multiple liquid level sensor is also provided with in described reservoir.
Further, described liquid feed device also comprises at least one input duct, at least one Drainage pipe and the liquid feed valve be arranged in described input duct that are communicated with described siphon chamber and described reservoir respectively and the tapping valve be arranged on described Drainage pipe.
The utility model also provides a kind of wet-method etching equipment, comprises one of above-mentioned liquid feed device.
Further, described wet-method etching equipment also comprises etching chamber, described nozzle is arranged in described etching chamber, is provided with the vacuum cup of carrying wet etching thing, connects described vacuum cup and the rotary machine driving described vacuum cup to rotate and connect described vacuum cup and maintain the vacuum pump of the vacuum degree of described vacuum cup in described etching chamber below described nozzle.
Further, described wet-method etching equipment also comprises the devil liquor recovery groove be arranged at bottom described etching chamber.
Further, described wet-method etching equipment also comprises the deionized water pipeline that the surface of the described vacuum cup in described etching chamber is aimed in outlet.
Compared with prior art, the liquid feed device that the utility model provides and wet-method etching equipment, have following beneficial effect:
1, in reservoir, with the addition of siphon chamber, the nozzle of itself and eminence is made to form siphonage, and ensure the stable of siphonage by the cooperation of siphon piping, thread flow in pipes and siphon control valve and auxiliary valve, thus negative-pressure siphon is carried out to leakage around nozzle, it is made no longer to drip, avoid polluting, technology stability improves;
2, utilize siphon piping, thread flow in pipes and siphon control valve and auxiliary valve to make liquid backflow in nozzle to siphon chamber, avoid the use of suck-back valve of the prior art, decrease the frequent process costs changing suck-back valve, easy to maintenance.
Accompanying drawing explanation
Figure 1A and Figure 1B is existing a kind of operating state of wet-method etching equipment and the structural representation of holding state respectively;
The structural representation that Fig. 2 A to 2C is the holding state of the liquid feed device of the utility model specific embodiment, operating state, operating state transfer holding state to;
Fig. 3 is the structural representation of the wet-method etching equipment of the utility model specific embodiment.
Embodiment
For making the purpose of this utility model, feature becomes apparent, and be further described, but the utility model can realize by different forms, should just not be confined to described embodiment below in conjunction with accompanying drawing to embodiment of the present utility model.
Please refer to Fig. 2 A to 2C, the utility model proposes a kind of liquid feed device, comprise reservoir 10, nozzle 14, the feed liquid pipeline 112 being communicated with nozzle 14 and reservoir 10 and the drawing liquid pump 11 be arranged on feed liquid pipeline 112, described liquid feed device also comprises the siphon chamber 16 be arranged in reservoir 10, be communicated with the siphon piping 161 of siphon chamber 16 and nozzle 14, be arranged on the siphon control valve 13 on siphon piping 161, the thread flow in pipes 113 being communicated with siphon chamber 16 and drawing liquid pump 11 and the auxiliary valve 12 be arranged on thread flow in pipes 113, one end that described thread flow in pipes 113 connects siphon chamber 16 is arranged on described siphon control valve 13 and is communicated with siphon piping 161 with on the siphon piping 161 between siphon chamber 16, the minimum point of nozzle 14 is higher than the peak in siphon chamber 16.
In the present embodiment, be also provided with reflux line 111 between the outlet of drawing liquid pump 11 and reservoir 10, nozzle 14 is fixed on elevating mechanism 15 (can be the mechanisms such as piston), can move up and down under the drive of elevating mechanism 15.
In the present embodiment, reflux line 111 and feed liquid pipeline 112 position near the outlet of drawing liquid pump 11 is communicated with, form first three-way pipeline, one end of thread flow in pipes 113 is communicated with the another location of feed liquid pipeline 112 near the outlet of drawing liquid pump 11, form second three-way pipeline, the other end of thread flow in pipes 113 is communicated with the position of siphon piping 161 near the entrance lower end (namely siphon control valve 13 is near the one end in siphon chamber 16) of siphon control valve 13, form the 3rd three-way pipeline, feed liquid pipeline 112 and siphon piping 161 are communicated with a position of (namely siphon control valve 13 is near one end of nozzle 14) near the outlet of siphon control valve 13, form the 4th three-way pipeline.In the present embodiment, difference in height between the minimum point of described nozzle 14 and the peak in siphon chamber 16 is 1 meter ~ 5 meters, it is such as 3 meters, this difference in height can make the liquid at nozzle 14 place move toward siphon chamber 16 under gravity, produce negative pressure (when difference in height is 3 meters, negative pressure is about-0.03MPa) in siphon piping 161 inside, thus make the unnecessary liquid in nozzle place be sucked into siphon piping 161, and do not drop, thus the article of below can not be polluted.
The use procedure particularly of the liquid feed device of the present embodiment is as follows:
Please refer to Fig. 2 A, in standby (idle) state or when turning to operating state by holding state, siphon control valve 13, auxiliary valve 12 are closed, siphon chamber 16 is empty, the liquid that drawing liquid pump 11 extracts from reservoir 10 is all back to reservoir 10 by reflux line 111, and siphon piping 161, thread flow in pipes 113 and suction pump 11 carry this section of feed liquid pipeline 112 of liquid all not have liquid to flow through to nozzle 14.
Please refer to Fig. 2 B, when (process) state of work, siphon control valve 13 is closed, auxiliary valve 12 is opened, drawing liquid pump 11 drawing liquid pressure increase, extracts large quantity of fluid from reservoir 10, and is split into three tunnels: the first via is delivered to nozzle 14 place by feed liquid pipeline 112 and uses; Second tunnel is delivered to siphon chamber 16 by thread flow in pipes 161, can finally make siphon chamber 16 have one's bosom filled with; 3rd tunnel is back in reservoir 10 by reflux line 111.Under the drawing liquid horsepower of drawing liquid pump 11, nozzle 14 normally can spray liquid, and condenses in the liquid around nozzle 14, can be subject to the siphon suction function in siphon piping 161, and firmly condense in around nozzle 14, can not moving up and down and drop with nozzle 14.
Please refer to Fig. 2 C, when turning to holding state in working order, siphon control valve 13 is opened, auxiliary valve 12 cuts out, and no longer continues have liquid to flow through in thread flow in pipes 113, and the drawing liquid horsepower of drawing liquid pump 11 reduces, the a small amount of liquid extracted from reservoir 10 is back to reservoir 10 by reflux line 111, liquid around nozzle 14 and in nozzle 14 is under the suction function of siphon piping 161, and suck-back, in siphon chamber 16, can not pollute the article below nozzle 14 because Action of Gravity Field drops.
In addition, in the present embodiment, multiple liquid level sensor is also provided with in described reservoir 10, comprise the high liquid level sensor 17 for monitoring the highest liquid level in reservoir 10, when the liquid level of high liquid level sensor 17 in reservoir 10 exceedes the highest liquid level warning line, produce the coherent signal of " reservoir is full "; And for monitoring the low liquid level sensor 18 of the minimum liquid level in reservoir 10, when the liquid level of low liquid level sensor 18 in reservoir 10 exceedes minimum liquid level warning line, produce the coherent signal of " reservoir is empty full ".
In addition, the described liquid feed device of the present embodiment also comprises many input duct (not shown), Drainage pipe 191 and the liquid feed valve (not shown) be arranged in input duct and the tapping valve 19 be arranged on Drainage pipe 191 that are communicated with siphon chamber and reservoir respectively.Many input duct can mix the liquid needed for kinds of processes in reservoir 10, every bar input duct can be arranged a liquid feed valve or at least two input duct share liquid feed valves, control the feed liquor speed in corresponding input duct.Surplus liquid in reservoir 10 and siphon chamber 16 can be drained by Drainage pipe 191, and tapping valve 19 can control the drain age velocity on corresponding Drainage pipe 191.
From the above mentioned, the liquid feed device that the utility model provides, siphon chamber is with the addition of in reservoir, the nozzle of itself and eminence is made to form siphonage, and ensure the stable of siphonage by the cooperation of siphon piping, thread flow in pipes and siphon control valve and auxiliary valve, thus negative-pressure siphon is carried out to leakage around nozzle, make it no longer drip, avoid polluting, technology stability improves; Utilize siphon piping, thread flow in pipes and siphon control valve and auxiliary valve to make liquid backflow in nozzle to siphon chamber simultaneously, avoid the use of suck-back valve of the prior art, decrease the frequent process costs changing suck-back valve, easy to maintenance.
Please refer to Fig. 3, the utility model also provides a kind of wet-method etching equipment, comprises above-mentioned liquid feed device 1, etching chamber 2 and devil liquor recovery groove 3.Nozzle 14 is positioned at etching chamber 2.In etching chamber 2, be provided with the vacuum cup 22 of carrying wet etching thing (wafer be such as etched) in the below of nozzle 14, connect vacuum cup 22 rotary machine 22 driving vacuum cup 21 to rotate and connection vacuum cup and maintain the vacuum pump (not shown) of the vacuum degree of vacuum cup 21.Devil liquor recovery groove 3 is arranged at bottom etching chamber 2, for being drained by the waste liquid in etching chamber 2.The wet-method etching equipment of the present embodiment also comprises the deionized water pipeline 23 that vacuum cup 22 surface in etching chamber 2 is aimed in outlet, for cleaning the wet etching thing surface on vacuum cup 21.
In use, etching liquid is transported to nozzle 14 place by feed liquid pipeline 112 with constant current speed to the wet-method etching equipment that the utility model provides by the drawing liquid pump 11 of liquid feed device 1 usually; Etching liquid is stably sprayed onto on the wet etching thing (such as silicon chip) of rotation on vacuum cup 21 in etching chamber 2 by nozzle 14, reaction rate and the controlled anisotropic wet etch of surface smoothness are carried out to wet etching thing, vacuum cup 21 simultaneously in wet etching thing and etching chamber 2 fits tightly under the effect of vacuum pump evacuation, binding face and etching liquid environment are isolated, realize the one-sided protection to wet etching thing, rotary machine 22 drives vacuum cup to rotate the uniformity that can ensure wet etching; Leave the etching liquid on wet etching thing surface, the waste collection groove 3 place's enrichment bottom etching chamber 2, and etching chamber 2 can be left through waste liquid discharging tube (not shown).After etching terminates, close liquid feed device, and open deionized water pipeline 23, the liquid entering etching chamber 2 is switched to deionized water.After wet etching thing shower under the flushing of deionized water is clean, and dried by rotary machine High Rotation Speed, whole wet etching process terminates.
From the above mentioned, the wet-method etching equipment that the utility model provides, its liquid feed device is transformed, siphon chamber, siphon piping, siphon control valve, thread flow in pipes and auxiliary valve is with the addition of in liquid feed device, the siphonage utilizing the nozzle of siphon chamber and eminence to be formed, carries out negative-pressure siphon to leakage around nozzle, makes it no longer drip, avoid causing the surface contamination of article of being etched, technology stability improves; Utilize siphon piping, thread flow in pipes and siphon control valve and auxiliary valve to make liquid backflow in nozzle to siphon chamber simultaneously, avoid the use of suck-back valve of the prior art, decrease the frequent process costs changing suck-back valve, easy to maintenance.
Obviously, those skilled in the art can carry out various change and modification to utility model and not depart from spirit and scope of the present utility model.Like this, if these amendments of the present utility model and modification belong within the scope of the utility model claim and equivalent technologies thereof, then the utility model is also intended to comprise these change and modification.
Claims (10)
1. a liquid feed device, comprise reservoir, nozzle, the feed liquid pipeline being communicated with described nozzle and described reservoir and the drawing liquid pump be arranged on described feed liquid pipeline, it is characterized in that, described liquid feed device also comprises the siphon chamber be arranged in described reservoir, be communicated with the siphon piping of described siphon chamber and described nozzle, be arranged on the siphon control valve on described siphon piping, the thread flow in pipes being communicated with described siphon chamber and described drawing liquid pump and the auxiliary valve be arranged on described thread flow in pipes, one end that described thread flow in pipes connects described siphon chamber to be arranged on the siphon piping between described siphon control valve with described siphon chamber and to be communicated with described siphon piping, the minimum point of described nozzle is higher than the peak in described siphon chamber.
2. liquid feed device as claimed in claim 1, is characterized in that, be also provided with reflux line between described drawing liquid delivery side of pump and described reservoir.
3. liquid feed device as claimed in claim 1, it is characterized in that, the difference in height between the minimum point of described nozzle and the peak in described siphon chamber is 1 meter ~ 5 meters.
4. the liquid feed device as described in claim 1 or 3, is characterized in that, the difference in height between the minimum point of described nozzle and the peak in described siphon chamber is 3 meters.
5. liquid feed device as claimed in claim 1, is characterized in that, be also provided with multiple liquid level sensor in described reservoir.
6. liquid feed device as claimed in claim 1, it is characterized in that, described liquid feed device also comprises at least one input duct, at least one Drainage pipe and the liquid feed valve be arranged in described input duct that are communicated with described siphon chamber and described reservoir respectively and the tapping valve be arranged on described Drainage pipe.
7. a wet-method etching equipment, is characterized in that, comprises the liquid feed device according to any one of claim 1 to 6.
8. wet-method etching equipment as claimed in claim 7, it is characterized in that, also comprise etching chamber, described nozzle is arranged in described etching chamber, is provided with the vacuum cup of carrying wet etching thing, connects described vacuum cup and the rotary machine driving described vacuum cup to rotate and connect described vacuum cup and maintain the vacuum pump of the vacuum degree of described vacuum cup in described etching chamber below described nozzle.
9. wet-method etching equipment as claimed in claim 8, is characterized in that, also comprise the devil liquor recovery groove be arranged at bottom described etching chamber.
10. wet-method etching equipment as claimed in claim 8, is characterized in that, also comprises the deionized water pipeline that the surface of the described vacuum cup in described etching chamber is aimed in outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521076468.5U CN205211717U (en) | 2015-12-18 | 2015-12-18 | Supply liquid device and wet etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521076468.5U CN205211717U (en) | 2015-12-18 | 2015-12-18 | Supply liquid device and wet etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205211717U true CN205211717U (en) | 2016-05-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521076468.5U Expired - Fee Related CN205211717U (en) | 2015-12-18 | 2015-12-18 | Supply liquid device and wet etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205211717U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356520A (en) * | 2017-07-31 | 2017-11-17 | 南京通用化工设备技术研究院 | A kind of high temperature corrosion pipeline monitoring device |
| CN108762002A (en) * | 2018-05-21 | 2018-11-06 | 王青 | A kind of wafer lithography method |
| CN111326437A (en) * | 2018-12-14 | 2020-06-23 | 北京北方华创微电子装备有限公司 | Spray device, semiconductor processing equipment and cleaning method |
| CN112786499A (en) * | 2021-03-11 | 2021-05-11 | 长江存储科技有限责任公司 | Liquid supply device |
| CN113628986A (en) * | 2020-05-06 | 2021-11-09 | 长鑫存储技术有限公司 | Wet processing apparatus, control method thereof, storage medium, and electronic apparatus |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
-
2015
- 2015-12-18 CN CN201521076468.5U patent/CN205211717U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356520A (en) * | 2017-07-31 | 2017-11-17 | 南京通用化工设备技术研究院 | A kind of high temperature corrosion pipeline monitoring device |
| CN108762002A (en) * | 2018-05-21 | 2018-11-06 | 王青 | A kind of wafer lithography method |
| CN108762002B (en) * | 2018-05-21 | 2021-06-15 | 郑君雄 | Wafer photoetching method |
| CN111326437A (en) * | 2018-12-14 | 2020-06-23 | 北京北方华创微电子装备有限公司 | Spray device, semiconductor processing equipment and cleaning method |
| CN111326437B (en) * | 2018-12-14 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Spray device, semiconductor processing equipment and cleaning method |
| CN113628986A (en) * | 2020-05-06 | 2021-11-09 | 长鑫存储技术有限公司 | Wet processing apparatus, control method thereof, storage medium, and electronic apparatus |
| CN113628986B (en) * | 2020-05-06 | 2024-03-26 | 长鑫存储技术有限公司 | Wet processing apparatus, control method thereof, storage medium, and electronic apparatus |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
| CN114804920B (en) * | 2021-01-18 | 2024-03-15 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid corrosion machine and control mode thereof |
| CN112786499A (en) * | 2021-03-11 | 2021-05-11 | 长江存储科技有限责任公司 | Liquid supply device |
| CN112786499B (en) * | 2021-03-11 | 2021-12-17 | 长江存储科技有限责任公司 | Liquid supply device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160504 Termination date: 20191218 |