KR20000020924A - Apparatus for supplying etching solutions - Google Patents
Apparatus for supplying etching solutions Download PDFInfo
- Publication number
- KR20000020924A KR20000020924A KR1019980039753A KR19980039753A KR20000020924A KR 20000020924 A KR20000020924 A KR 20000020924A KR 1019980039753 A KR1019980039753 A KR 1019980039753A KR 19980039753 A KR19980039753 A KR 19980039753A KR 20000020924 A KR20000020924 A KR 20000020924A
- Authority
- KR
- South Korea
- Prior art keywords
- chemical liquid
- storage tank
- chemical
- supply
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Abstract
Description
본 발명은 반도체 제조공정에 있어서 약액 공급장치에 관한 것으로, 특히 약액 저장탱크간의 설치 위치에 따른 중력을 이용하여 약액을 공급하는 약액 공급장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical liquid supply device in a semiconductor manufacturing process, and more particularly, to a chemical liquid supply device for supplying a chemical liquid using gravity depending on an installation position between chemical liquid storage tanks.
반도체 소자의 제조 과정에는 실리콘산화막, 실리콘질화막 또는 금속 등과 같이 웨이퍼의 전면에 박막이 형성되는 공정들이 있다. 이 때 원하지 않는 부위의 박막들을 선택적으로 제거해 내는 공정을 식각공정이라 한다. 식각공정 진행 후 식각형태에는 둥근 원형 모양내의 박막이 제거된 형태, 길게 라인 형상으로 웨이퍼의 표면에 박막을 남기는 형태 등 제품의 필요 사항에 따른 여러 가지의 형태가 있게 된다.There are processes in which a thin film is formed on a front surface of a wafer, such as a silicon oxide film, a silicon nitride film, or a metal, in the manufacturing process of a semiconductor device. At this time, the process of selectively removing the thin film of the unwanted portion is called an etching process. After the etching process, there are various forms according to the requirements of the product, such as a thin film in a round circle shape and a thin film on the surface of the wafer in a long line shape.
이러한 식각공정은 식각 특성에 따라 등방성 식각과 이방성 식각으로 구분하며, 등방성 식각은 주로 습식식각에서 나타나며 플라즈마를 이용한 식각시에도 파라메타 변화에 따라 얻을 수 있으며, 이방성 식각은 플라즈마 식각시에도 얻을 수 있으나 습식식각으로는 거의 얻을 수가 없다.The etching process is divided into isotropic etching and anisotropic etching according to the etching characteristics, and isotropic etching is mainly shown in wet etching, and can be obtained according to the parameter change even during plasma etching. Anisotropic etching can be obtained even during plasma etching. You can hardly get it by etching.
또한 다른 분류로서, 식각 공정은 약액을 이용한 습식식각(Wet Etch) 방식과 반응 가스를 이용한 건식식각(Dry Etch) 방식으로 크게 분류할 수 있으며, 습식식각은 주로 약액의 케미컬을 사용하는 모든 종류의 식각을 의미하며, 건식(플라즈마) 식각은 플라즈마를 이용한 모든 식각공정을 포괄적으로 의미하기도 한다.In addition, as another classification, the etching process can be broadly classified into a wet etching method using a chemical solution and a dry etching method using a reaction gas, and the wet etching method mainly includes all types of chemical solutions using mainly chemical solutions. Etching, and dry (plasma) etching may also mean all etching processes using plasma.
도 1은 습식식각 공정에서 사용되는 종래의 약액 공급장치를 도시한 장치구성도이다.1 is a device configuration diagram showing a conventional chemical liquid supply apparatus used in the wet etching process.
도 1에 대하여 살펴보면, 설비외에 설치되어 있는 약액 저장탱크(10)와 설비내에 설치되어 있는 약액 저장탱크(16)간의 약액을 공급하는 경우 예컨대 불산(HF), 비.오.이(Bufferd Oxide Etchant), 인산(H3PO4) 등의 약액(11)이 담겨있는 약액 저장탱크(10)로부터 약액(11)은 약액 공급펌프(12)에 의해 약액 저장탱크(16)로 공급되고 약액 제어밸브(14)에 의해 약액(11)의 공급량이 제어된다.Referring to FIG. 1, in the case of supplying a chemical solution between a chemical storage tank 10 installed outside a facility and a chemical storage tank 16 installed in a facility, for example, hydrofluoric acid (HF), B. O. (Buffered Oxide Etchant) The chemical liquid 11 is supplied from the chemical liquid storage tank 10 containing the chemical liquid 11, such as phosphoric acid (H 3 PO 4 ), to the chemical liquid storage tank 16 by the chemical liquid supply pump 12, and the chemical liquid control valve. The supply amount of the chemical liquid 11 is controlled by (14).
이 때, 약액 저장탱크(16)내에 공급된 약액(11)은 식각 공정조건에 따른 설정된 온도 범위에서 히터(17)에 의해 가열된다.At this time, the chemical liquid 11 supplied into the chemical liquid storage tank 16 is heated by the heater 17 in a set temperature range according to the etching process conditions.
이어서, 약액 저장탱크(16)내의 약액(11)이 스프레이 펌프(18)에 의해 챔버(22)내로 공급되고 스프레이 제어밸브(20) 제어에 의해 약액(11)의 공급량이 제어된다.Subsequently, the chemical liquid 11 in the chemical liquid storage tank 16 is supplied into the chamber 22 by the spray pump 18, and the supply amount of the chemical liquid 11 is controlled by the control of the spray control valve 20.
이 때, 약액(11)이 노즐(23)에 의해 회전하는 웨이퍼(24)의 표면 상에 분사된다. 따라서, 웨이퍼(24) 상에 증착된 박막이 선택적으로 식각된 후 웨이퍼(24)는 수세조(도시 안됨)로 빠져나가게 된다. 그리고, 식각에 이용된 약액은 챔버 배수로(28)를 통하여 약액 저장탱크(16)로 되돌아오게 된다.At this time, the chemical liquid 11 is injected onto the surface of the wafer 24 which is rotated by the nozzle 23. Thus, after the thin film deposited on the wafer 24 is selectively etched, the wafer 24 exits to a water bath (not shown). Then, the chemical liquid used for etching is returned to the chemical storage tank 16 through the chamber drain 28.
한편, 식각공정시 웨이퍼(24)에 묻어나가는 일정량의 약액을 추가로 보충하여야할 경우 약액 저장탱크(10)내의 약액(11)이 약액 공급펌프(13)에 의해 추가로 공급되고, 약액 제어밸브(15)에 의해 약액(11)의 공급량이 제어된다.On the other hand, when a certain amount of chemical liquid buried in the wafer 24 during the etching process needs to be additionally supplemented, the chemical liquid 11 in the chemical liquid storage tank 10 is additionally supplied by the chemical liquid supply pump 13, and the chemical liquid control valve. The supply amount of the chemical liquid 11 is controlled by (15).
또한, 식각공정시 사용된 약액(11)이 챔버배수로(28)를 통해 약액 저장탱크(16)로 되돌아온 약액(11)을 교체할 때에는 약액(11)이 약액 배수밸브(30)의 제어에 의하여 약액 배수구(32)로 배출하게 된다.In addition, when the chemical liquid 11 used in the etching process is replaced with the chemical liquid 11 returned to the chemical storage tank 16 through the chamber drain 28, the chemical liquid 11 is controlled by the chemical liquid drain valve 30. It is discharged to the chemical liquid drain 32.
상기와 같은 종래 약액 공급장치에 따르면, 설비외에 설치되어 있는 약액 저장탱크와 설비내에 설치되어 있는 약액 저장탱크간의 약액을 공급하는데 있어 각종 펌프를 이용해서 약액을 공급해왔다.According to the conventional chemical liquid supply device as described above, in supplying the chemical liquid between the chemical liquid storage tank installed outside the facility and the chemical liquid storage tank installed in the facility, chemical liquids have been supplied using various pumps.
이는 설비내 약액 저장탱크외에 약액 저장탱크간의 약액을 공급하기 위해서는 약액 공급장치 예컨대 약액 공급펌프, 약액 추가 공급펌프 등이 따로 필요로하며 그에 따른 유지, 보수 및 정기적인 펌프 교체가 요구되는 문제점이 발생된다.In order to supply the chemical solution between the chemical storage tanks in addition to the chemical storage tanks in the facility, a chemical liquid supply device such as a chemical liquid supply pump and an additional chemical liquid supply pump is required separately, resulting in a problem requiring maintenance, maintenance, and regular pump replacement. do.
상기한 문제점을 해결하기 위한 본 발명의 목적은 약액 저장탱크간의 설치위치 높이차에 의한 위치에너지(중력)를 이용하여 설비외 약액 저장탱크로부터 설비내 약액 저장탱크내로 약액을 공급하도록 한 약액 공급장치를 제공하는 데 있다.An object of the present invention for solving the above problems is to supply a chemical solution from the chemical storage tank outside the equipment to the chemical storage tank in the equipment by using the potential energy (gravity) due to the difference in the installation position height between the chemical storage tank To provide.
도 1은 종래의 약액 공급장치를 도시한 장치구성도1 is a device configuration diagram showing a conventional chemical liquid supply device
도 2는 본 발명에 따른 약액 공급장치를 도시한 부분적인 장치구성도Figure 2 is a partial device configuration showing a chemical supply device according to the present invention
상기한 목적을 달성하기 위하여 본 발명에 따른 약액 공급장치는In order to achieve the above object,
내부공간이 밀폐되고 소정량의 약액이 저장되며, 설비외에 설치되는 제 1 약액 저장탱크;A first chemical storage tank in which the internal space is sealed and a predetermined amount of chemical liquid is stored and installed outside the facility;
상기 제 1 약액 저장탱크로부터 약액을 공급받으며, 상기 제 1 약액 저장탱크 보다 낮게 설비내에 설치되는 제 2 약액 저장탱크;A second chemical storage tank receiving chemical liquid from the first chemical storage tank and installed in a facility lower than the first chemical storage tank;
상기 제 1 약액 저장탱크와 제 2 약액 저장탱크간에 공급밸브의 제어에 의해 약액을 공급하는 공급관을 포함한다.And a supply pipe for supplying the chemical liquid between the first chemical liquid storage tank and the second chemical liquid storage tank by controlling the supply valve.
이 때, 상기 제 1 약액 저장탱크의 상단부 일측에는 가압용 기체공급밸브가 설치된 급기관이 연결되어 있고, 급기관 단부에는 약액분산방지용 필터가 설치되어 있으며, 급기관을 통하여 O2또는 N2가스가 주입된다.At this time, an air supply pipe having a pressurized gas supply valve is connected to one side of an upper end of the first chemical storage tank, and a chemical liquid dispersion prevention filter is installed at an end of the air supply pipe, and an O 2 or N 2 gas is supplied through the air supply pipe. Is injected.
또한, 상기 제 1 약액 저장탱크의 상단부 타측에는 배기밸브가 설치된 배기관이 연결되어 있으며, 배기관 단부에는 약품배출방지용 필터가 설치되어 있다.In addition, an exhaust pipe provided with an exhaust valve is connected to the other end of the upper end portion of the first chemical storage tank, and an exhaust filter is installed at an end of the exhaust pipe.
이하, 첨부된 도면을 참조하여 본 발명에 따른 약액 공급장치에 대하여 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the drug supply device according to the present invention.
도 2는 본 발명에 따른 약액 공급장치를 도시한 부분적인 장치구성도이다.Figure 2 is a partial device configuration showing a chemical liquid supply apparatus according to the present invention.
도 2에 도시된 약액 공급장치에 대하여 살펴보면, 설비외에 설치되고 소정량의 약액(50)이 담겨있는 밀폐된 약액 저장탱크(51)의 상단부 일측에는 가압용 기체공급밸브(52)가 설치된 급기관(53)이 연결되어 있으며, 약액 저장탱크(51)의 상단부 타측에는 배기밸브(54)가 설치된 배기관(55)이 연결되어 있다. 그리고, 약액 저장탱크(51)의 상단부 소정 부위에는 약액(50)을 주입하는 약액주입구(56)가 설치되어 있다.Referring to the chemical liquid supply device shown in Figure 2, the air supply pipe is installed outside the facility and the gas supply valve 52 for pressurization is provided on one side of the upper end of the sealed chemical liquid storage tank 51 containing a predetermined amount of the chemical liquid (50) 53 is connected, and an exhaust pipe 55 provided with an exhaust valve 54 is connected to the other end of the upper end of the chemical storage tank 51. In addition, a chemical liquid inlet 56 for injecting the chemical liquid 50 is provided at a predetermined portion of the upper end portion of the chemical liquid storage tank 51.
또한, 약액 저장탱크(51)내에서 가압용 기체공급밸브(52)의 단부에는 약액 분산방지용 필터(57)가 설치되어 있으며, 배기밸브(54)의 단부에는 약품배출방지용 필터(58)가 설치되어 있다.In addition, the chemical liquid dispersion prevention filter 57 is installed at the end of the pressurized gas supply valve 52 in the chemical storage tank 51, and the chemical discharge prevention filter 58 is installed at the end of the exhaust valve 54. It is.
그리고, 약액 저장탱크(51)는 공급밸브(60)가 설치된 공급관(59)에 의해 설비내에 설치되어 있는 약액 저장탱크(61)와 연결되어 있으며, 약액 저장탱크(61) 보다 높게 설치된다.The chemical liquid storage tank 51 is connected to the chemical liquid storage tank 61 installed in the facility by a supply pipe 59 in which the supply valve 60 is installed, and is installed higher than the chemical liquid storage tank 61.
상기와 같은 설치 구조를 갖는 약액 공급장치에 따르면, 약액 저장탱크(51)내의 약액(50)을 약액 저장탱크(61)로 공급하기 위해 약액 저장탱크(51)의 가압용 기체공급밸브(52) 및 공급밸브(60)를 개방하는 경우 O2또는 N2가스가 급기관(53)을 거쳐 약액 저장탱크(51)내에 저장된 약액(50)을 가압시킴으로써 약액 저장탱크(51)와 약액 저장탱크(61)간의 설치 높이차에 의한 위치에너지(중력)에 의해 약액 저장탱크(61)로 약액을 공급하게 된다.According to the chemical liquid supply device having the above-described mounting structure, the gas supply valve 52 for pressurizing the chemical liquid storage tank 51 to supply the chemical liquid 50 in the chemical liquid storage tank 51 to the chemical liquid storage tank 61. And when the supply valve 60 is opened, the chemical liquid storage tank 51 and the chemical liquid storage tank (O 2 or N 2 gas are pressurized by the chemical liquid 50 stored in the chemical liquid storage tank 51 via the air supply pipe 53). The chemical liquid is supplied to the chemical liquid storage tank 61 by the potential energy (gravity) due to the installation height difference between the 61.
이 때, 약액 저장탱크(51)의 상단부 타측에 연결되어 있는 배기밸브(54)를 차단시킴으로써 약액 저장탱크(51)내의 밀폐된 내부공간의 중력을 높이게 된다.At this time, by blocking the exhaust valve 54 connected to the other end of the upper end of the chemical storage tank 51 to increase the gravity of the sealed inner space in the chemical storage tank 51.
한편, 공급관(59)을 거쳐 약액 저장탱크(61)내에 약액(50) 공급이 완료되면 가압용 기체공급밸브(52) 및 공급밸브(60)을 차단하고 약액 저장탱크(51)의 상단부 타측에 연결되어 있는 배기밸브(54)를 개방함으로써 약액 저장탱크(51)내의 중력을 낮추게 된다.On the other hand, when the supply of the chemical liquid 50 in the chemical liquid storage tank 61 through the supply pipe 59 is completed, the gas supply valve 52 and the supply valve 60 for pressurization is cut off and the other side of the upper end of the chemical liquid storage tank 51 Opening the connected exhaust valve 54 lowers the gravity in the chemical storage tank 51.
따라서, 약액 저장탱크(61) 보다 약액 저장탱크(51)를 높게 설치하여 이들의 설치 높이차에 의해 발생되는 중력을 이용하여 약액 저장탱크(51)로부터 약액 저장탱크(61)로 약액(50)을 공급함으로써 종래 펌프와 같은 부수적인 약액공급장치를 이용하지 않고서도 용이하게 약액을 공급할 수 있게 된다.Therefore, the chemical liquid storage tank 51 is installed higher than the chemical liquid storage tank 61, and the chemical liquid 50 is transferred from the chemical liquid storage tank 51 to the chemical liquid storage tank 61 by using gravity generated by the difference in their installation height. By supplying the chemical solution can be easily supplied without using an additional chemical liquid supply device such as a conventional pump.
이상에서와 같이 본 발명에 따르면, 설비외 약액 저장탱크와 설비내 약액 저장탱크간의 약액공급을 약액 저장탱크간의 설치 높이차에 의한 위치에너지(중력)를 이용함으로써 설비내 약액 저장탱크외에 약액 공급펌프, 약액 추가 공급펌프 등의 추가적인 약액 공급장치가 따로 필요치 않아 그에 따른 유지, 보수가 편리하고, 정기적인 펌프 교체가 필요치 않아 그에 따른 유지비를 절감할 수 있다.As described above, according to the present invention, the chemical liquid supply pump to the chemical liquid storage tank in addition to the chemical liquid storage tank in the equipment by using the potential energy (gravity) by the difference in the installation height between the chemical storage tank and the chemical storage tank in the equipment In addition, additional chemical liquid supply devices such as chemical liquid supply pumps are not required, and thus, maintenance and repair are convenient, and regular pump replacement is not necessary, thereby reducing maintenance costs.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980039753A KR20000020924A (en) | 1998-09-24 | 1998-09-24 | Apparatus for supplying etching solutions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980039753A KR20000020924A (en) | 1998-09-24 | 1998-09-24 | Apparatus for supplying etching solutions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000020924A true KR20000020924A (en) | 2000-04-15 |
Family
ID=19551833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980039753A KR20000020924A (en) | 1998-09-24 | 1998-09-24 | Apparatus for supplying etching solutions |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20000020924A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6659682B2 (en) * | 1997-03-12 | 2003-12-09 | Autospan Limited | Deformable speed hump |
| US7004193B2 (en) | 1997-03-12 | 2006-02-28 | Autospan Limited | Valve arrangement and traffic calming device incorporating such an arrangement |
| KR100653706B1 (en) * | 2004-10-15 | 2006-12-05 | 삼성전자주식회사 | Chemical supply apparatus of semiconductor manufacturing equipment |
| KR101139587B1 (en) * | 2010-06-18 | 2012-04-27 | 주식회사 디엠에스 | Chemical Bath Deposition apparatus |
| KR101691013B1 (en) * | 2015-09-22 | 2016-12-29 | 삼성중공업 주식회사 | Drain pot |
-
1998
- 1998-09-24 KR KR1019980039753A patent/KR20000020924A/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6659682B2 (en) * | 1997-03-12 | 2003-12-09 | Autospan Limited | Deformable speed hump |
| US7004193B2 (en) | 1997-03-12 | 2006-02-28 | Autospan Limited | Valve arrangement and traffic calming device incorporating such an arrangement |
| KR100653706B1 (en) * | 2004-10-15 | 2006-12-05 | 삼성전자주식회사 | Chemical supply apparatus of semiconductor manufacturing equipment |
| KR101139587B1 (en) * | 2010-06-18 | 2012-04-27 | 주식회사 디엠에스 | Chemical Bath Deposition apparatus |
| KR101691013B1 (en) * | 2015-09-22 | 2016-12-29 | 삼성중공업 주식회사 | Drain pot |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20080110652A (en) | Reduced contaminant gas injection system and method of using | |
| US20030159779A1 (en) | Insulation-film etching system | |
| CN205211717U (en) | Supply liquid device and wet etching equipment | |
| US5900045A (en) | Method and apparatus for eliminating air bubbles from a liquid dispensing line | |
| CN102092955B (en) | Etching apparatus | |
| KR20000020924A (en) | Apparatus for supplying etching solutions | |
| US6918192B2 (en) | Substrate drying system | |
| KR101980729B1 (en) | Substrate treating apparatus and substrate treating method | |
| US20040194806A1 (en) | IPA concentration interlock detector for substrate dryer | |
| US20030111339A1 (en) | Plating system | |
| US20020104556A1 (en) | Controlled fluid flow and fluid mix system for treating objects | |
| KR100799069B1 (en) | Wafer etching apparatus and etching method | |
| KR20080014938A (en) | Apparatus for removing particle of electro static chuck | |
| KR101002942B1 (en) | Thin-film deposition apparatus which has high gas conductance | |
| KR100511771B1 (en) | Valve and system for supplying wet chemical using the valve | |
| KR20040032200A (en) | Apparatus for washing and drying wafer and method of washing and drying wafer using that | |
| KR960013500B1 (en) | Dry etcher of semiconductor device using microwave | |
| KR100252865B1 (en) | Cleaning apparatus for semiconductor wafer | |
| KR19980040758A (en) | Chamber vacuum setting device for chemical vapor deposition equipment for semiconductor manufacturing | |
| CN113394135A (en) | Wafer wet etching equipment | |
| KR101287112B1 (en) | Wet Etching Equipment | |
| CN115706031A (en) | Substrate processing apparatus and substrate processing method | |
| KR20020047470A (en) | electrostatic chuck structure in semiconductor fabrication equipment | |
| KR20050063388A (en) | Exhaust apparatus of wet station | |
| KR19990048585A (en) | Etching System for Display Manufacturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| WITN | Withdrawal due to no request for examination |