CN205177796U - Semiconductor wafer dust removal cleaning machine - Google Patents
Semiconductor wafer dust removal cleaning machine Download PDFInfo
- Publication number
- CN205177796U CN205177796U CN201520881954.8U CN201520881954U CN205177796U CN 205177796 U CN205177796 U CN 205177796U CN 201520881954 U CN201520881954 U CN 201520881954U CN 205177796 U CN205177796 U CN 205177796U
- Authority
- CN
- China
- Prior art keywords
- purge tank
- heater
- pipe
- cleaning
- jar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000428 dust Substances 0.000 title claims abstract description 20
- 238000010926 purge Methods 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005406 washing Methods 0.000 abstract 6
- 238000000605 extraction Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036299 sexual function Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model discloses a semiconductor wafer dust removal cleaning machine, including dust extraction, washing jar, pivot, time -recorder, level gauge, thermometer, heater, fixation clamp, drain pipe, overflow pipe, flange and air heater, the washing jar in be equipped with the level gauge, be equipped with the time -recorder on the washing jar, it is equipped with the thermometer to wash a jar outer wall, it is equipped with the heater to wash tank bottom end, it is equipped with the drain pipe to wash tank bottom end, be equipped with the control valve on the drain pipe, overflow pipe one end and washing jar middle part intercommunication, overflow pipe one end and row water piping connection, be equipped with the pivot in the washing jar, pivot bottom installation flange, the flange bottom surface is equipped with a plurality of fixation clamps, it is equipped with the air heater to wash a jar upper portion inner wall, dust extraction is through dust absorption pipe and washing jar intercommunication. The utility model discloses guarantee suitable cleaning performance, improve the cleaning performance, once can wash a plurality of wafers, improve the cleaning efficiency, avoid the dust because of water stain be infected with to be difficult to get rid of influence technological efficiency, simple structure, convenient to use easily promotes.
Description
Technical field
The utility model relates to a kind of semiconductor fabrication equipment, specifically a kind of semiconductor crystal wafer dedusting cleaning machine.
Background technology
Semiconductor refers to the material of electric conductivity between conductor and insulator under normal temperature.Semiconductor has a wide range of applications on broadcast receiver, television set and thermometric.If diode is exactly the device adopting semiconductor fabrication.Semiconductor refers to that a kind of conductivity can be controlled, scope can from insulator to conductor between material.No matter from science and technology or the angle of economic development, the importance of semiconductor is all very huge.Today most electronic product, as the core cell in the middle of computer, mobile phone or digital recorder all has extremely close connection with semiconductor.Common semi-conducting material has silicon, germanium, GaAs etc., and silicon is especially in various semi-conducting material, the influential one of most in business application.Wafer refers to the silicon wafer that Si semiconductor production of integrated circuits is used, because its shape is circular, therefore is called wafer; Various circuit component structure can be manufactured on silicon, and become the IC product having certain electric sexual function.The original material of wafer is silicon, and there is nexhaustible silicon dioxide on earth's crust surface.Silicon dioxide ore refines via arc furnace, chlorination of hydrochloric acid, and after distillation, has made highly purified polysilicon, its high purity 99.999999999%.General little device having special cleaning wafer in existing technique, is difficult to during cleaning clean up, and the subsequent technique impact of dust on wafer is larger.
Utility model content
The purpose of this utility model is to provide a kind of semiconductor crystal wafer dedusting cleaning machine, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the utility model provides following technical scheme:
A kind of semiconductor crystal wafer dedusting cleaning machine, comprise dust exhaust apparatus, purge tank, rotating shaft, timer, liquid level gauge, thermometer, heater, geometrical clamp, drainage pipe, overflow pipe, connect dish and air-heater, liquid level gauge is provided with in described purge tank, purge tank is provided with timer, purge tank outer wall is provided with thermometer, purge tank bottom is provided with heater, purge tank bottom is provided with drainage pipe, drainage pipe is provided with control valve, overflow pipe one end is communicated with in the middle part of purge tank, overflow pipe one end is connected with drainage pipe, rotating shaft is provided with in purge tank, rotating shaft bottom is installed and is connect dish, connect the face of trying to get to the heart of a matter and be provided with multiple geometrical clamp, protective sleeve is provided with inside geometrical clamp, purge tank upper inside wall is provided with air-heater, dust exhaust apparatus is communicated with purge tank by sweep-up pipe, the sweep-up pipe port of export is provided with suction port.
As further program of the utility model: described rotating shaft is telescopic structure.
As the utility model further scheme: described purge tank is made up of transparent material.
Compared with prior art, the beneficial effects of the utility model are: the amount of cleaning fluid measured by the utility model liquid level gauge, avoid them more or very fewly affect cleaning performance, timer sets scavenging period, ensure suitable cleaning performance, heater ensures the temperature that cleaning fluid is suitable, thermometer is measuring appliance temperature at any time, improve cleaning performance, overflow pipe avoids cleaning hypervolia impact cleaning, protective sleeve protection wafer, wafer clamped by geometrical clamp, once can clean multiple wafer, connect dish to rotate under the drive of rotating shaft, ensure cleaning performance, improve cleaning efficiency, blown away the cleaning fluid of crystal column surface in time by air-heater after cleaning, it is avoided water stainly to affect next step technological effect, dust exhaust apparatus avoid dust because of water stain be infected be difficult to remove, affect technological effect, purge tank is made up of transparent material, can be clearly seen that cleaning situation in purge tank, structure is simple, easy to use, be easy to promote.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of semiconductor crystal wafer dedusting cleaning machine.
In figure: 1, dust exhaust apparatus, 2, sweep-up pipe, 3, purge tank, 4, rotating shaft, 5, timer, 6, liquid level gauge, 7, thermometer, 8, heater, 9, protective sleeve, 10, geometrical clamp, 11, drainage pipe, 12, overflow pipe, 13, connect dish, 14, air-heater.
Embodiment
Be described in more detail below in conjunction with the technical scheme of embodiment to this patent.
Refer to Fig. 1, a kind of semiconductor crystal wafer dedusting cleaning machine, comprise dust exhaust apparatus 1, purge tank 3, rotating shaft 4, timer 5, liquid level gauge 6, thermometer 7, heater 8, geometrical clamp 10, drainage pipe 11, overflow pipe 12, connect dish 13 and air-heater 14, liquid level gauge 6 is provided with in described purge tank 3, the amount of cleaning fluid measured by liquid level gauge 6, avoid them more or very fewly affect cleaning performance, purge tank 3 is provided with timer 5, timer 5 sets scavenging period, ensure suitable cleaning performance, purge tank 3 outer wall is provided with thermometer 7, purge tank 3 bottom is provided with heater 8, heater 8 ensures the temperature that cleaning fluid is suitable, thermometer 7 is measuring appliance temperature at any time, improve cleaning performance, purge tank 3 bottom is provided with drainage pipe 11, drainage pipe 11 is provided with control valve, overflow pipe 12 one end is communicated with in the middle part of purge tank 3, overflow pipe 12 one end is connected with drainage pipe 11, overflow pipe 12 avoids cleaning hypervolia impact cleaning, rotating shaft 4 is provided with in purge tank 3, rotating shaft 4 is telescopic structure, rotating shaft 4 bottom is installed and is connect dish 13, connect dish 13 bottom surface and be provided with multiple geometrical clamp 10, protective sleeve 9 is provided with inside geometrical clamp 10, wafer protected by protective sleeve 9, wafer clamped by geometrical clamp 10, once can clean multiple wafer, connect dish 13 to rotate under the drive of rotating shaft 4, ensure cleaning performance, improve cleaning efficiency, purge tank 3 upper inside wall is provided with air-heater 14, blown away the cleaning fluid of crystal column surface in time by air-heater 14 after cleaning, it is avoided water stainly to affect next step technological effect, dust exhaust apparatus 1 is communicated with purge tank 3 by sweep-up pipe 2, sweep-up pipe 2 port of export is provided with suction port, suction port is corresponding with air-heater 14, dust exhaust apparatus 1 avoid dust because of water stain be infected be difficult to remove, affect technological effect, purge tank 3 is made up of transparent material, can be clearly seen that cleaning situation in purge tank 3.
Operation principle of the present utility model is: the amount of cleaning fluid measured by the utility model liquid level gauge, avoid them more or very fewly affect cleaning performance, timer sets scavenging period, ensure suitable cleaning performance, heater ensures the temperature that cleaning fluid is suitable, thermometer is measuring appliance temperature at any time, improve cleaning performance, overflow pipe avoids cleaning hypervolia impact cleaning, protective sleeve protection wafer, wafer clamped by geometrical clamp, once can clean multiple wafer, connect dish to rotate under the drive of rotating shaft, ensure cleaning performance, improve cleaning efficiency, blown away the cleaning fluid of crystal column surface in time by air-heater after cleaning, it is avoided water stainly to affect next step technological effect, dust exhaust apparatus avoid dust because of water stain be infected be difficult to remove, affect technological effect, purge tank is made up of transparent material, can be clearly seen that cleaning situation in purge tank.
Above the better embodiment of this patent is explained in detail, but this patent is not limited to above-mentioned execution mode, in the ken that one skilled in the relevant art possesses, can also makes a variety of changes under the prerequisite not departing from this patent aim.
Claims (3)
1. a semiconductor crystal wafer dedusting cleaning machine, comprise dust exhaust apparatus, purge tank, rotating shaft, timer, liquid level gauge, thermometer, heater, geometrical clamp, drainage pipe, overflow pipe, connect dish and air-heater, it is characterized in that, liquid level gauge is provided with in described purge tank, purge tank is provided with timer, purge tank outer wall is provided with thermometer, purge tank bottom is provided with heater, purge tank bottom is provided with drainage pipe, drainage pipe is provided with control valve, overflow pipe one end is communicated with in the middle part of purge tank, overflow pipe one end is connected with drainage pipe, rotating shaft is provided with in purge tank, rotating shaft bottom is installed and is connect dish, connect the face of trying to get to the heart of a matter and be provided with multiple geometrical clamp, protective sleeve is provided with inside geometrical clamp, purge tank upper inside wall is provided with air-heater, dust exhaust apparatus is communicated with purge tank by sweep-up pipe, the sweep-up pipe port of export is provided with suction port.
2. a kind of semiconductor crystal wafer dedusting cleaning machine according to claim 1, it is characterized in that, described rotating shaft is telescopic structure.
3. a kind of semiconductor crystal wafer dedusting cleaning machine according to claim 1, it is characterized in that, described purge tank is made up of transparent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520881954.8U CN205177796U (en) | 2015-11-06 | 2015-11-06 | Semiconductor wafer dust removal cleaning machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520881954.8U CN205177796U (en) | 2015-11-06 | 2015-11-06 | Semiconductor wafer dust removal cleaning machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205177796U true CN205177796U (en) | 2016-04-20 |
Family
ID=55741748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520881954.8U Expired - Fee Related CN205177796U (en) | 2015-11-06 | 2015-11-06 | Semiconductor wafer dust removal cleaning machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205177796U (en) |
-
2015
- 2015-11-06 CN CN201520881954.8U patent/CN205177796U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20161106 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |