CN205092268U - High -power LED light source - Google Patents

High -power LED light source Download PDF

Info

Publication number
CN205092268U
CN205092268U CN201520883218.6U CN201520883218U CN205092268U CN 205092268 U CN205092268 U CN 205092268U CN 201520883218 U CN201520883218 U CN 201520883218U CN 205092268 U CN205092268 U CN 205092268U
Authority
CN
China
Prior art keywords
light source
led light
layer
power led
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520883218.6U
Other languages
Chinese (zh)
Inventor
江向东
江浩澜
陈柏尧
吴小军
汪春涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ANHUI AZURE OPTOELECTRONICS TECHNOLOGY Co Ltd
Original Assignee
ANHUI AZURE OPTOELECTRONICS TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANHUI AZURE OPTOELECTRONICS TECHNOLOGY Co Ltd filed Critical ANHUI AZURE OPTOELECTRONICS TECHNOLOGY Co Ltd
Priority to CN201520883218.6U priority Critical patent/CN205092268U/en
Application granted granted Critical
Publication of CN205092268U publication Critical patent/CN205092268U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The utility model provides a high -power LED light source, the LED light source includes base plate, a plurality of LED wafer, the surface of base plate is covered from bottom to top and is had insulating layer, metal level, be equipped with circuit, positive pole, negative pole on the metal level, still include the solid crystal block of LED wafer on the base plate, the circuit is in in the solid crystal block, a plurality of LED wafer is fixed on the base plate and with the circuit carries out electric connection, the circuit with anodal, negative pole carries out electric connection, the bottom of LED wafer is equipped with the alloy -layer, the alloy -layer melting in on the base plate, the alloy -layer is gold - ashbury metal layer. Compared with the prior art, the eutectic layer that aluminium nitride ceramic substrate and gold - ashbury metal layer eutectic welding back produced, this eutectic layer coefficient of heat conductivity is high, and heat stability is good, in solid brilliant, has satisfied the heat dissipation demand of high -power LED chip.

Description

A kind of high-power LED light source
Technical field
The utility model relates to lighting technical field, specifically a kind of high-power LED light source.
Background technology
The same with conventional light source, semiconductor light emitting diode (LED) also can produce heat during operation, and how much it depends on overall luminous efficiency.Its electro-optical efficiency approximately only has about 20 ~ 30%, and that is the electric energy of about 70% all becomes heat energy.
But, the feature of LED chip produces high heat in minimum volume, and the thermal capacity of LED itself is very little, so, with the fastest speed, these heat conduction must be gone out, otherwise will produce very high junction temperature, in order to as much as possible heat is drawn out to outside chip, people have carried out a lot of improvement on the chip structure of LED.
In order to improve the heat radiation of LED chip itself, its topmost improvement is exactly the backing material adopting conductive coefficient high.For some high-power LEDs, general employing eutectic solder technology die bond.So the conductive coefficient of Eutectic Layer directly affects the heat dispersal situations of chip.So how each large LED manufacturer, improve the conductive coefficient of alloy-layer in continuous research.When taking into account cost and product quality, a kind of cost-effective substrate Shi Ge great LED manufacturer in the urgent need to.
Utility model content
The purpose of this utility model is to solve the defect that in prior art, Eutectic Layer conductive coefficient is not high, provides a kind of high-power LED light source to solve the problems referred to above.
The utility model is achieved through the following technical solutions above-mentioned technical purpose:
A kind of high-power LED light source, described LED light source comprises substrate, several LED wafer; Described substrate is provided with circuit, positive pole, negative pole; Described substrate also comprises LED wafer die bond block; Described circuit is in die bond block; Several LED wafer described are fixed on the substrate and are electrically connected with described circuit; Described circuit and described positive pole, negative pole are electrically connected; The bottom of described LED wafer is provided with alloy-layer; Described alloy-layer is melted on described substrate.
Preferably, be arranged with two groups of series circuits in described die bond block, described two groups of series circuits are in parallel.
Preferably, several LED wafer described are divided into two groups, often organize LED wafer by one group of series circuit connected in series together.
Preferably, series connection 12 LED wafer on described often group series circuit.
Preferably, the mass ratio of the Jin Yuxi in described gold-tin alloy layers is 7:3.
Preferably, described substrate is aluminium nitride substrate; Described insulating barrier is ceramic insulating layer.
Preferably, by eutectic solder technology, described gold-tin alloy layers, series circuit, aluminum nitride ceramic substrate are fused and form Eutectic Layer.
Preferably, the welding temperature of described eutectic welding is 280 °.
Preferably, described LED wafer also comprises luminescent layer; Described luminescent layer is in the top of described gold-tin alloy layers; The top of described luminescent layer is covered with fluorescence coating.
Preferably, described die bond goes also to be provided with cofferdam around; Described cofferdam is design of Eight Diagrams; Two groups of LED chips are divided into two parts by the cofferdam of described design of Eight Diagrams; Described cofferdam height is 0.5mm; Described cofferdam is the cofferdam using cofferdam glue to make.
The utility model compared with prior art, has the following advantages:
The Eutectic Layer produced after aluminum nitride ceramic substrate welds with gold-tin alloy layers eutectic, especially golden tin is than during for 7:3, and the Eutectic Layer conductive coefficient of generation is high, Heat stability is good, while die bond, meets the radiating requirements of high-power LED chip.
The high-power LED light source that the utility model provides have employed the graphic circuit distribution of Eight Diagrams, compact conformation, and under the cooperation in cofferdam 3, the light-emitting block territory of light source is concentrated, and light efficiency is good.
Accompanying drawing explanation
Fig. 1 is the vertical view of a kind of high-power LED light source of the utility model;
Fig. 2 is the physical dimension schematic diagram of Fig. 1.
Embodiment
For making to have a better understanding and awareness architectural feature of the present utility model and effect of reaching, coordinating detailed description in order to preferred embodiment and accompanying drawing, being described as follows:
As shown in Figure 1, a kind of high-power LED light source, LED light source comprises substrate 1, several LED wafer 2; The surface of substrate 1 is provided with insulating barrier 11, metal level 12 from bottom to top.Be provided with circuit 121, positive pole 122, negative pole 123; Several LED wafer 2 are fixed on substrate 1 and are electrically connected with circuit 11.Circuit 121 and positive pole 122, positive pole 123 are electrically connected.The bottom of LED wafer 2 is provided with alloy-layer; Alloy-layer is melted on substrate 1.The alloy-layer that the utility model provides is gold-tin alloy layers.
The substrate 1 that the utility model provides is aluminum nitride ceramic substrate 1.When the mass ratio of the Jin Yuxi in gold-tin alloy layers is 7:3, by eutectic solder technology by gold-tin alloy layers, series circuit 121, the fused formation Eutectic Layer of aluminum nitride ceramic substrate 1, the welding temperature of eutectic welding is 280 °.The Eutectic Layer of formation like this, conductive coefficient is high, good stability.
The light source that the utility model provides, its substrate 1 is circular, circular substrate 1, and it is highly the cofferdam 3 of 0.5mm that circular substrate 1 is provided with along die bond block surrounding, and cofferdam 3 is Eight-Diagram shape; Positive and negative electrode is separately positioned on the two ends of Eight-Diagram.Pedestal 1 is provided with two groups of series circuits, 121, two groups of series circuits 121 and is arranged in the two parts in Eight-Diagram cofferdam 3, and often group series circuit 121 is all electrically connected with positive and negative electrode.Two groups of series circuits 121 are in parallel, often organize 12 LED wafer that series circuit 121 connected, two groups of 24 LED wafer altogether, the circuit that namely the utility model provides be 12 strings 2 and the circuit of Eight Diagrams configuration.
As shown in Figure 2, the aluminium nitride substrate that the utility model provides is the square of length of side 24mm, and the inner ring diameter in cofferdam 3 is 20mm.This high-power LED light source that the utility model provides have employed the graphic circuit distribution of Eight Diagrams, compact conformation, and under the cooperation in cofferdam 3, the light-emitting block territory of light source is concentrated, and light efficiency is good.
Certainly, luminescent layer is can't do without on the top of gold-tin alloy layers, in order to reach the light efficiency of certain color, can be covered with the fluorescence coating (not shown) of different colours on the top of luminescent layer.
More than show and describe general principle of the present utility model, principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; the just principle of the present utility model described in above-described embodiment and specification; under the prerequisite not departing from the utility model spirit and scope, the utility model also has various changes and modifications, and these changes and improvements all fall in claimed scope of the present utility model.The protection range that the utility model requires is defined by appending claims and equivalent thereof.

Claims (10)

1. a high-power LED light source, is characterized in that: described LED light source comprises substrate, several LED wafer; The surface of described substrate is covered with insulating barrier, metal level from bottom to top; Described metal level is provided with circuit, positive pole, negative pole; Described substrate also comprises LED wafer die bond block; Described circuit is in die bond block; Several LED wafer described are fixed on the substrate and are electrically connected with described circuit; Described circuit and described positive pole, negative pole are electrically connected; The bottom of described LED wafer is provided with alloy-layer; Described alloy-layer is melted on described substrate; Described alloy-layer is gold-tin alloy layers.
2. a kind of high-power LED light source according to claim 1, is characterized in that: be arranged with two groups of series circuits in described die bond block, and described two groups of series circuits are in parallel.
3. a kind of high-power LED light source according to claim 2, is characterized in that: several LED wafer described are divided into two groups, often organizes LED wafer by one group of series circuit connected in series together.
4. a kind of high-power LED light source according to claim 3, is characterized in that: series connection 12 LED wafer on described often group series circuit.
5. a kind of high-power LED light source according to claim 1, is characterized in that: described substrate is aluminium nitride substrate; Described insulating barrier is ceramic insulating layer.
6. a kind of high-power LED light source according to claim 1, is characterized in that: described LED wafer also comprises luminescent layer; Described luminescent layer is in the top of described gold-tin alloy layers.
7. a kind of high-power LED light source according to claim 6, is characterized in that: the top of described luminescent layer is covered with fluorescence coating.
8. a kind of high-power LED light source according to claim 1, is characterized in that: described die bond goes also to be provided with cofferdam around; Described cofferdam is design of Eight Diagrams; Two groups of LED chips are divided into two parts by the cofferdam of described design of Eight Diagrams.
9. a kind of high-power LED light source according to claim 8, is characterized in that: described cofferdam height is 0.5mm.
10. a kind of high-power LED light source according to claim 8, is characterized in that: described cofferdam is the cofferdam using cofferdam glue to make.
CN201520883218.6U 2015-11-04 2015-11-04 High -power LED light source Expired - Fee Related CN205092268U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520883218.6U CN205092268U (en) 2015-11-04 2015-11-04 High -power LED light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520883218.6U CN205092268U (en) 2015-11-04 2015-11-04 High -power LED light source

Publications (1)

Publication Number Publication Date
CN205092268U true CN205092268U (en) 2016-03-16

Family

ID=55482926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520883218.6U Expired - Fee Related CN205092268U (en) 2015-11-04 2015-11-04 High -power LED light source

Country Status (1)

Country Link
CN (1) CN205092268U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261690A (en) * 2015-11-04 2016-01-20 安徽湛蓝光电科技有限公司 Large power LED light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261690A (en) * 2015-11-04 2016-01-20 安徽湛蓝光电科技有限公司 Large power LED light source

Similar Documents

Publication Publication Date Title
CN103022307B (en) Wafer-level LED packaging method
CN101532612A (en) Method for manufacturing integrated LED chip light source
CN100508186C (en) Surface mount light emitting type and preparation method thereof
CN102881806A (en) Surface mounted device light emitting diode (SMD LED) unit and packaging method thereof
CN205092268U (en) High -power LED light source
CN104930476A (en) Metallic LED (light emitting diode) lamp support
CN203071136U (en) Wafer level LED packaging structure
CN204760382U (en) LED lamp encapsulation support
CN204167364U (en) High heat conduction aluminium nitride full porcelain LED shell
CN102903838A (en) Packaged LED light source with radiating structure and production method thereof
CN108461616A (en) A kind of great power LED detaches the packaging method of radiator structure with thermoelectricity
CN205429001U (en) LEDCOB light source packaging structure
CN202024135U (en) LED bulb with high lighting efficiency
CN205014297U (en) LED lamp five metals support
CN102646673A (en) Highly integrated high light efficiency thermoelectric separation power type light emitting diode (LED) and encapsulating method thereof
CN205092269U (en) LED light source
CN105023932B (en) A kind of vertical LED array element that combination LED epitaxial structure is integrated with LED package substrate
TW201429009A (en) Light emitting diode device and a method for manufacturing heat dissipating substrate
CN105261690A (en) Large power LED light source
CN202564438U (en) LED packaging structure
CN203323067U (en) High-power LED heat dissipation structure
CN105047787A (en) Packaging support for LED lamp
EP3006814A1 (en) Led bulb light with high luminous efficacy
CN203871325U (en) Aluminium nitride ceramic bracket
CN203836687U (en) Inverted LED integrated substrate

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160316

Termination date: 20211104