CN205016512U - Big power semiconductor diode - Google Patents
Big power semiconductor diode Download PDFInfo
- Publication number
- CN205016512U CN205016512U CN201520819283.2U CN201520819283U CN205016512U CN 205016512 U CN205016512 U CN 205016512U CN 201520819283 U CN201520819283 U CN 201520819283U CN 205016512 U CN205016512 U CN 205016512U
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Abstract
The utility model discloses a big power semiconductor diode, including lead wire, cathode terminal, anode terminal, connector, P type semiconductor, N type semiconductor, PN junction, alloy -layer and base, the alloy -layer set up in the base top, inside P type semiconductor and the N type semiconductor of being provided with of alloy -layer, be provided with the PN junction between P type semiconductor and the N type semiconductor, P type semiconductor with anode terminal is connected, N type semiconductor with cathode terminal is connected, all be provided with the lead wire on cathode terminal and the anode terminal, connector connecting terminal and lead wire. The utility model has the advantages of: this diode adopts the alloy -layer that has microflute heat radiation structure, cooperates the metal heat -conducting layer of high heat transfer efficiency, improved big power diode the radiating efficiency, prolonged the life of diode, improved the stability in use.
Description
Technical field
The utility model relates to diode field, particularly a kind of high power semi-conductor diode.
Background technology
Semiconductor diode, also known as crystal diode, is called for short diode (diode).It is a kind of can the electronic device of unidirectional conduction current.Have a PN junction two lead terminals in semiconductor diode inside, this electronic device, according to the direction of applied voltage, possesses the conductibility of unidirectional current.
Diode has anode (anode) and negative electrode (cathode) two terminals (these terms come from vacuum tube), and electric current can only toward single direction flowing.That is, electric current can flow to negative electrode from anode, can not flow to anode from negative electrode.This effect is just referred to as rectified action.And in vacuum tube, arrive anode by hot electron from negative electrode by the voltage added between electrode, thus there is the effect of rectification.In semiconductor diode, there is the PN joining effect utilizing P type and N-type two kinds of semiconductor bond faces, also have the Schottky effect utilizing metal and semiconductor bond to produce to reach the type of rectified action.If the diode of PN maqting type, be exactly anode in P type side, N-type side is then negative electrode.
Light-emitting diode has unilateral conduction.Only have when additional forward voltage makes forward current enough large just luminous, forward current is larger, and luminescence is stronger.
Photodiode is far infrared receiving tube, is the device that a kind of luminous energy and electric energy carry out changing.
The operation principle of photodiode: it is when utilizing the additional reverse voltage of PN junction, and under light irradiates, change reverse current and backward resistance, when not having illumination to penetrate, reverse current is very little, and backward resistance is very large; When there being illumination to penetrate, backward resistance reduces, and reverse current strengthens.
In the course of the work, heat radiation is the subject matter that it needs to solve to high power semi-conductor diode.From external structure, be also tube core and radiator two parts, this is due to will by powerful electric current in tube core during diode operation, and PN junction has certain forward resistance, and tube core will therefore loss and generating heat.In order to the cooling of tube core, radiator must be equipped with.The tube core of general below 200A adopts spiral, then the employing of more than 200A is flat.But, even if adopt the high power semi-conductor diode of this design still to there is heat dissipation problem, the stability of impact application diode device entirety.
Utility model content
The purpose of this utility model is a kind of high power semi-conductor diode provided to solve above-mentioned the deficiencies in the prior art, this diode adopts the sheet tube core with microflute radiator structure, coordinate the metal guide thermosphere of high-heat conductive efficency, improve the radiating efficiency of heavy-duty diode, extend the useful life of diode, improve stability in use.
To achieve these goals, a kind of high power semi-conductor diode designed by the utility model, comprise lead-in wire, cathode terminal, anode terminal, connector, P type semiconductor, N type semiconductor, PN junction, alloy-layer and base, described alloy-layer is arranged at above described base, described alloy-layer inside is provided with P type semiconductor and N type semiconductor, PN junction is provided with between described P type semiconductor and N type semiconductor, described P type semiconductor is connected with described anode terminal, described N type semiconductor is connected with described cathode terminal, described cathode terminal and anode terminal are provided with lead-in wire, described connector splicing ear and lead-in wire,
Described alloy-layer is provided with micro-recesses, has high-efficiency heat conduction coating outside described alloy-layer.
Further, a kind of high power semi-conductor diode, described connector is spherical aluminum alloy.
Further, a kind of high power semi-conductor diode, has high temperature resistant enamelled coating outside described high-efficiency heat conduction coating.
A kind of high power semi-conductor diode that the utility model obtains, this diode adopts the alloy-layer with microflute radiator structure, microflute radiator structure adds the surface area of radiator structure, be convenient to more heats conduct out from the PN junction of diode, alloy-layer can be conducted the heat and pass to air by alloyed layer is arranged simultaneously high-efficiency heat conduction coating more rapidly, have high temperature resistant enamelled coating ensure that outside high-efficiency heat conduction coating diode alloyed layer high-efficiency heat conduction coating can not be oxidized simultaneously, above respective outer side edges makes heavy-duty diode under the working condition of high voltage and high current, have good heat radiation performance, improve the stability of product, extend the useful life of product.
The utility model has the advantage of: this diode adopts the alloy-layer with microflute radiator structure, coordinate the metal guide thermosphere of high-heat conductive efficency, improve the radiating efficiency of heavy-duty diode, extend the useful life of diode, improve stability in use.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment.
In figure: lead-in wire 1, cathode terminal 2, anode terminal 3, connector 4, P type semiconductor 5, N type semiconductor 6, PN junction 7, alloy-layer 8, base 9.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further illustrated.
Embodiment:
As shown in the figure, a kind of high power semi-conductor diode, comprise lead-in wire 1, cathode terminal 2, anode terminal 3, connector 4, P type semiconductor 5, N type semiconductor 6, PN junction 7, alloy-layer 8 and base 9, described alloy-layer 8 is arranged at above described base 9, described alloy-layer 8 inside is provided with P type semiconductor 5 and N type semiconductor 6, PN junction 7 is provided with between described P type semiconductor 5 and N type semiconductor 6, described P type semiconductor 5 is connected with described anode terminal 3, described N type semiconductor 6 is connected with described cathode terminal 2, described cathode terminal 2 and anode terminal 3 are provided with lead-in wire 1, described connector 4 connects cathode terminal 2, anode terminal 3 and lead-in wire 1, described alloy-layer 8 is provided with micro-recesses 81, has high-efficiency heat conduction coating outside described alloy-layer 8.
Described connector 4 is spherical aluminum alloy; High temperature resistant enamelled coating is had outside described high-efficiency heat conduction coating.
A kind of high power semi-conductor diode that the present embodiment obtains, this diode adopts the alloy-layer with microflute radiator structure, microflute radiator structure adds the surface area of radiator structure, be convenient to more heats conduct out from the PN junction of diode, alloy-layer can be conducted the heat and pass to air by alloyed layer is arranged simultaneously high-efficiency heat conduction coating more rapidly, have high temperature resistant enamelled coating ensure that outside high-efficiency heat conduction coating diode alloyed layer high-efficiency heat conduction coating can not be oxidized simultaneously, above respective outer side edges makes heavy-duty diode under the working condition of high voltage and high current, have good heat radiation performance, improve the stability of product, extend the useful life of product.
The advantage of the present embodiment is: this diode adopts the alloy-layer with microflute radiator structure, coordinates the metal guide thermosphere of high-heat conductive efficency, improves the radiating efficiency of heavy-duty diode, extends the useful life of diode, improve stability in use.
For the utility model person of an ordinary skill in the technical field; without departing from the concept of the premise utility; its framework form can be flexible and changeable; just make some simple deduction or replace, all should be considered as belonging to the scope of patent protection that the utility model is determined by submitted to claims.
Claims (3)
1. a high power semi-conductor diode, comprise lead-in wire (1), cathode terminal (2), anode terminal (3), connector (4), P type semiconductor (5), N type semiconductor (6), PN junction (7), alloy-layer (8) and base (9), described alloy-layer (8) is arranged at described base (9) top, described alloy-layer (8) inside is provided with P type semiconductor (5) and N type semiconductor (6), PN junction (7) is provided with between described P type semiconductor (5) and N type semiconductor (6), described P type semiconductor (5) is connected with described anode terminal (3), described N type semiconductor (6) is connected with described cathode terminal (2), described cathode terminal (2) and anode terminal (3) are provided with lead-in wire (1), described connector (4) connects cathode terminal (2), anode terminal (3) and lead-in wire (1), described alloy-layer (8) is provided with micro-recesses (81), and described alloy-layer has high-efficiency heat conduction coating outside (8).
2. a kind of high power semi-conductor diode according to claim 1, is characterized in that: described connector (4) is spherical aluminum alloy.
3. a kind of high power semi-conductor diode according to claim 1, is characterized in that: have high temperature resistant enamelled coating outside described high-efficiency heat conduction coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520819283.2U CN205016512U (en) | 2015-10-22 | 2015-10-22 | Big power semiconductor diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520819283.2U CN205016512U (en) | 2015-10-22 | 2015-10-22 | Big power semiconductor diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205016512U true CN205016512U (en) | 2016-02-03 |
Family
ID=55215101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520819283.2U Expired - Fee Related CN205016512U (en) | 2015-10-22 | 2015-10-22 | Big power semiconductor diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205016512U (en) |
-
2015
- 2015-10-22 CN CN201520819283.2U patent/CN205016512U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20171022 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |