CN204946942U - A kind of high radiance, the high infrared LED encapsulating structure exported - Google Patents
A kind of high radiance, the high infrared LED encapsulating structure exported Download PDFInfo
- Publication number
- CN204946942U CN204946942U CN201520604586.2U CN201520604586U CN204946942U CN 204946942 U CN204946942 U CN 204946942U CN 201520604586 U CN201520604586 U CN 201520604586U CN 204946942 U CN204946942 U CN 204946942U
- Authority
- CN
- China
- Prior art keywords
- substrate
- copper foil
- lens
- encapsulating structure
- foil layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model belongs to LED field and provides a kind of high radiance, the high infrared LED encapsulating structure exported, comprise LED chip, substrate and lens, described LED chip is by being bonded and fixed on substrate, described substrate is made up of high heat-conducting plastic, described LED chip periphery is also enclosed with fluorescence coating, the surface of described substrate is provided with copper foil layer, also reflector is coated with on the surface of copper foil layer, the two ends of described copper foil layer are provided with stent electrode and are connected with copper foil layer, the surface in described reflector is also provided with a circle silica gel box dam, hemispheric lens are set in described silica gel box dam, the end face of described lens is provided with some ring-shaped grooves and the center line of ring-shaped groove all overlaps with the center line of lens, the bottom of described substrate is coated with nm radiation heat-dispersing film layer, the utility model structure is simple, there is high light-emitting efficiency simultaneously, high-cooling property, be widely used in infrared searchlight.
Description
Technical field
The utility model relates to a kind of encapsulating structure, and particularly a kind of high radiance, the high infrared LED encapsulating structure exported, belong to LED field.
Background technology
LED illumination, as green, energy-conservation new light sources, is popularized in the past few years fast, is called as 21 century a new generation's light source.Along with the exploitation of various new high-tech material, the lifting of epitaxial device, sealed in unit and related process technologies, LED encapsulation structure is constantly being weeded out the old and bring forth the new, and performance have also been obtained larger development.
Although the encapsulating structure of current LED has had larger development, appoint and so there is larger drawback, such as, traditional encapsulating structure complex manufacturing technology, quite a few light can reflect in lens, causes light output efficiency low; Secondly, LED only has the electric energy conversion of small part to be useful luminous energy when work, all the other major parts are converted into heat energy, particularly the LED heat of high radiance, high output is larger, simultaneously also heat can be converted into because the light of the reflection of lens is absorbed by LED chip, this can cause heating serious, and traditional encapsulating structure thermal diffusivity is poor, so have a strong impact on the life-span of LED chip.
Given this, be necessary to design a kind of novel LED encapsulation structure, solve current Problems existing with this.
Utility model content
The technical problems to be solved in the utility model overcomes existing defect, provides a kind of high radiance, the high infrared LED encapsulating structure exported, effectively can solve the problem in background technology.
In order to solve the problems of the technologies described above, the utility model provides following technical scheme:
The utility model provides a kind of high radiance, the high infrared LED encapsulating structure exported, comprise LED chip, substrate and lens, described LED chip is by being bonded and fixed on substrate, described substrate is made up of high heat-conducting plastic, described LED chip periphery is also enclosed with fluorescence coating, the surface of described substrate is provided with copper foil layer, also reflector is coated with on the surface of copper foil layer, the two ends of described copper foil layer are provided with stent electrode and are connected with copper foil layer, the surface in described reflector is also provided with a circle silica gel box dam, hemispheric lens are set in described silica gel box dam, the end face of described lens is provided with some ring-shaped grooves and the center line of ring-shaped groove all overlaps with the center line of lens, the bottom of described substrate is coated with nm radiation heat-dispersing film layer.
As a kind of optimal technical scheme of the present utility model, the radiation intensity average out to 190mw/sr of described LED chip, power output is 850 watts.
As a kind of optimal technical scheme of the present utility model, the thickness of described fluorescence coating is 0.2mm ~ 2mm.
As a kind of optimal technical scheme of the present utility model, the conductive coefficient of described substrate is 8 ~ 20w/mK.
As a kind of optimal technical scheme of the present utility model, described copper foil layer is formed with circuit by being etched on substrate.
As a kind of optimal technical scheme of the present utility model, described LED chip is connected with stent electrode by gold thread.
As a kind of optimal technical scheme of the present utility model, the cross section of described ring-shaped groove is V-shaped, and the corner dimension between two groove faces of described groove is 45 ° ~ 120 °, and the groove depth of described groove is 1mm ~ 2mm.
The beneficial effect that the utility model reaches is:
1, conductive coefficient is adopted to be that the high heat-conducting plastic of 5 ~ 20W/mK is as baseplate material, can rapidly by heat conduction in radiator or air, simultaneously compared with conventional aluminum substrate, technique is more simple, and conductive coefficient is also than aluminium base plate hight, heat dispersion wants better;
2, copper foil layer and reflector layer are set at upper surface of base plate, can be convenient on substrate, form circuit by etch copper layers of foil, the light returned by reflection from lens can be reflected again, reduce heat;
3, by arranging nm radiation heat-dispersing film layer at base plate bottom, realized efficiently and outer medium heat loss through conduction by the capillarity increasing heat radiation area of self, secondly due to the directional characteristics of nm radiation heat-dispersing film layer, there is concussion and produce far-infrared radiation heat in rete crystal, product temperature is higher, far infrared radiation effect is better, thus causes heat dispersion better;
4, be provided with ring-shaped groove by the end face at lens, thus prevent light generation total reflection, improve the light emission rate of lens, LED chip can not generate heat because sucking the light of total reflection simultaneously, extends the useful life of LED chip.
Accompanying drawing explanation
Accompanying drawing is used to provide further understanding of the present utility model, and forms a part for specification, is used from explanation the utility model, does not form restriction of the present utility model with embodiment one of the present utility model.
In the accompanying drawings:
Fig. 1 is the structural representation of a kind of high radiance described in the utility model embodiment, the high infrared LED encapsulating structure exported;
Fig. 2 is the vertical view of lens of a kind of high radiance described in the utility model embodiment, the high infrared LED encapsulating structure exported;
Number in the figure: 1, LED chip; 2, substrate; 3, fluorescence coating; 4, copper foil layer; 5, reflector; 6, stent electrode; 7, silica gel box dam; 8, lens; 9, ring-shaped groove; 10, nm radiation heat-dispersing film layer.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described, should be appreciated that preferred embodiment described herein is only for instruction and explanation of the utility model, and be not used in restriction the utility model.
Embodiment: as shown in Figure 1-2, the utility model provides a kind of high radiance, the high infrared LED encapsulating structure exported, comprise LED chip 1, substrate 2 and lens 8, described LED chip 1 is by being bonded and fixed on substrate 2, described substrate 2 is made up of high heat-conducting plastic, described LED chip 1 periphery is also enclosed with fluorescence coating 3, the surface of described substrate 2 is provided with copper foil layer 4, reflector 5 is also coated with on the surface of copper foil layer 4, the two ends of described copper foil layer 4 are provided with stent electrode 6 and are connected with copper foil layer 4, the surface in described reflector 5 is also provided with a circle silica gel box dam 7, hemispheric lens 8 are set in described silica gel box dam 7, the end face of described lens 8 is provided with some ring-shaped grooves 9 and the center line of ring-shaped groove 9 all overlaps with the center line of lens 8, the bottom of described substrate 2 is coated with nm radiation heat-dispersing film layer 10.
Wherein, the radiation intensity average out to 190mw/sr of described LED chip 1, power output is 850 watts; The thickness of described fluorescence coating 3 is 0.2mm ~ 2mm; The conductive coefficient of described substrate 2 is 8 ~ 20w/mK; Described copper foil layer 4 is formed with circuit on a substrate 2 by etching; Described LED chip 1 is connected with stent electrode 6 by gold thread; The cross section of described ring-shaped groove 9 is V-shaped, and the corner dimension between two groove faces of described ring-shaped groove 9 is 45 ° ~ 120 °, and the groove depth of described ring-shaped groove 9 is 1mm ~ 2mm.
This encapsulating structure has high radiating effect, high light-emitting efficiency, be widely used in infrared searchlight, conductive coefficient is adopted to be that the high heat-conducting plastic of 8 ~ 20W/mK is as baseplate material, can rapidly by heat conduction in radiator or air, simultaneously compared with conventional aluminum substrate, technique is more simple, and conductive coefficient is also than aluminium base plate hight, heat dispersion wants better; Surface arranges copper foil layer 4 and reflector layer 5 on a substrate 2, can be convenient to form circuit on a substrate 2 by etch copper layers of foil 4, can reflect again the light be reflected back by lens 8, reduces heat; By arranging nm radiation heat-dispersing film layer 10 bottom substrate 2, can be realized efficiently and outer medium heat loss through conduction by the capillarity increasing heat radiation area of self, secondly due to the directional characteristics of nm radiation heat-dispersing film layer 10, there is concussion and produce far-infrared radiation heat in rete crystal, product temperature is higher, far infrared radiation effect is better, thus causes heat dispersion better; By being provided with ring-shaped groove 9 at the end face of lens 8, thus preventing light generation total reflection, improve the light emission rate of lens 8, LED chip 1 can not generate heat because sucking the light of total reflection simultaneously, extends the useful life of LED chip 1.
Last it is noted that the foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, although be described in detail the utility model with reference to previous embodiment, for a person skilled in the art, it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (7)
1. a high radiance, the high infrared LED encapsulating structure exported, comprise LED chip (1), substrate (2) and lens (8), it is characterized in that, described LED chip (1) is by being bonded and fixed on substrate (2), described substrate (2) is made up of high heat-conducting plastic, described LED chip (1) periphery is also enclosed with fluorescence coating (3), the surface of described substrate (2) is provided with copper foil layer (4), reflector (5) is also coated with on the surface of copper foil layer (4), the two ends of described copper foil layer (4) are provided with stent electrode (6) and are connected with copper foil layer (4), the surface in described reflector (5) is also provided with a circle silica gel box dam (7), a hemispheric lens (8) is set in described silica gel box dam (7), the end face of described lens (8) is provided with some ring-shaped grooves (9) and the center line of ring-shaped groove (9) all overlaps with the center line of lens (8), the bottom of described substrate (2) is coated with nm radiation heat-dispersing film layer (10).
2. a kind of high radiance according to claim 1, the high infrared LED encapsulating structure exported, it is characterized in that, the radiation intensity average out to 190mw/sr of described LED chip (1), power output is 850 watts.
3. a kind of high radiance according to claim 1, the high infrared LED encapsulating structure exported, it is characterized in that, the thickness of described fluorescence coating (3) is 0.2mm ~ 2mm.
4. a kind of high radiance according to claim 1, the high infrared LED encapsulating structure exported, it is characterized in that, the conductive coefficient of described substrate (2) is 8 ~ 20w/mK.
5. a kind of high radiance according to claim 1, the high infrared LED encapsulating structure exported, it is characterized in that, described copper foil layer (4) is formed with circuit by being etched on substrate (2).
6. a kind of high radiance according to claim 1, the high infrared LED encapsulating structure exported, it is characterized in that, described LED chip (1) is connected with stent electrode (6) by gold thread.
7. a kind of high radiance according to claim 1, the high infrared LED encapsulating structure exported, it is characterized in that, the cross section of described ring-shaped groove (9) is V-shaped, corner dimension between two groove faces of ring-shaped groove (9) is 45 ° ~ 120 °, and the groove depth of ring-shaped groove (9) is 1mm ~ 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520604586.2U CN204946942U (en) | 2015-08-12 | 2015-08-12 | A kind of high radiance, the high infrared LED encapsulating structure exported |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520604586.2U CN204946942U (en) | 2015-08-12 | 2015-08-12 | A kind of high radiance, the high infrared LED encapsulating structure exported |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204946942U true CN204946942U (en) | 2016-01-06 |
Family
ID=55014342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520604586.2U Expired - Fee Related CN204946942U (en) | 2015-08-12 | 2015-08-12 | A kind of high radiance, the high infrared LED encapsulating structure exported |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204946942U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108013735A (en) * | 2017-09-30 | 2018-05-11 | 浙江苏泊尔家电制造有限公司 | Cooking apparatus |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
-
2015
- 2015-08-12 CN CN201520604586.2U patent/CN204946942U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108013735A (en) * | 2017-09-30 | 2018-05-11 | 浙江苏泊尔家电制造有限公司 | Cooking apparatus |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104421775B (en) | A kind of high-power LED ceiling lamp based on microlens array | |
| CN104534421A (en) | LED light source module with highlight power density | |
| CN102903710A (en) | High-light-power-density ultraviolet ray LED (Light-emitting Diode) curing light source and preparation method thereof | |
| CN104896330A (en) | Led light source module | |
| CN101984510A (en) | Flexibly connected light-emitting diode (LED) device based on liquid metal base | |
| CN204946942U (en) | A kind of high radiance, the high infrared LED encapsulating structure exported | |
| CN1964092A (en) | A large power LED using porous metal material as heat emission device | |
| CN202834951U (en) | Straight tube type LED lamp | |
| CN102157503A (en) | Light-emitting diode structure capable of emitting light and enhancing heat radiation efficiency and LED (light-emitting diode) lamp | |
| CN205790069U (en) | A kind of LED encapsulation structure | |
| CN203434192U (en) | Bearing heat-radiating plate, and LED light source of remote phosphor structure | |
| CN207922160U (en) | A kind of LED radiator | |
| CN103346243B (en) | Carry heat sink and the LED light source of long-distance fluorescent powder structure and production method thereof | |
| CN202708751U (en) | Uniform-light type light-emitting diode (LED) tube light | |
| CN201155735Y (en) | High power light-emitting diode adopting porous metal material as heat radiating device | |
| CN204785723U (en) | LED lamp plate of copper cooling is applied in adoption | |
| CN201420995Y (en) | LED street lamp with good heat dissipation function | |
| CN204592990U (en) | For the multicore array integrated morphology of LED light source | |
| CN104613350B (en) | Illumination of high-power semiconductor light source | |
| CN204062562U (en) | Led lamp | |
| CN203099379U (en) | Straight-tube type LED (light emitting diode) lamp | |
| CN203225276U (en) | Led integrated light source module | |
| CN204285173U (en) | Screw socket type LED courtyard lamp | |
| CN202647316U (en) | LED (Light Emitting Diode) illuminating lamp of compound heat radiation substrate | |
| CN203656670U (en) | Straight tube LED (Light Emitting Diode) lamp with air cooling channel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518108 Guangdong province Shenzhen city Longhua District Longhua Road No. 57 is still the United States Office Longguan era 8 Building 810 Patentee after: SHENZHEN XUSHENG SEMICONDUCTOR CO.,LTD. Address before: 518108 Guangdong province Shenzhen city Longhua District Longhua Road No. 57 is still the United States Office Longguan era 8 Building 810 Patentee before: SHENZHEN XUSHENG INDUSTRY Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160106 Termination date: 20210812 |