CN204945617U - A kind of UVLED array light source Collection utilization device for directly writing exposure machine - Google Patents
A kind of UVLED array light source Collection utilization device for directly writing exposure machine Download PDFInfo
- Publication number
- CN204945617U CN204945617U CN201520691192.5U CN201520691192U CN204945617U CN 204945617 U CN204945617 U CN 204945617U CN 201520691192 U CN201520691192 U CN 201520691192U CN 204945617 U CN204945617 U CN 204945617U
- Authority
- CN
- China
- Prior art keywords
- uvled
- positive lens
- compound eye
- lens
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
The utility model relates to a kind of UVLED array light source Collection utilization device for directly writing exposure machine, compared with prior art solves the defect cannot carrying out source-collector utilization for UVLED luminescence chip.All collecting lens is placed with before UVLED luminescence chip of the present utility model, all curved compound eye is placed with before collecting lens, the light source of UVLED luminescence chip images in curved compound eye through collecting lens, multiplying power type minifier head group is placed with before curved compound eye, optical tunnel is placed with before multiplying power type minifier head group, the light of curved compound eye injection images in the entry port of optical tunnel through multiplying power type minifier head group, be placed with magnification lens group before optical tunnel, the light that optical tunnel goes out optical port injection images in dmd chip surface through magnification lens group.UVLED array sub-light source can be collected by the utility model, after carrying out even light shaping, images in DMD surface.
Description
Technical field
The utility model relates to directly writes exposure machine technical field, specifically a kind of UVLED array light source Collection utilization device for directly writing exposure machine.
Background technology
Along with the technology innovation of UVLED luminescence chip, the luminous power of UVLED also increases gradually, and UVLED is also used on relevant lithographic equipment.Compare and use more semiconductor laser at present, UVLED light source has higher cost performance.But UVLED luminescence chip exists major issue directly writing the use on exposure machine, be exactly how to form source-collector to utilize.Because single UVLED luminous power is low, therefore directly write exposure machine uses UVLED light source time, need to use multiple UVLED luminescence chip, so how multiple UVLED luminescence chip is formed array, thus reach the technical matters that the object increasing overall power has become urgent need solution.
Utility model content
The purpose of this utility model is to solve the defect cannot carrying out source-collector utilization in prior art for UVLED luminescence chip, provides a kind of UVLED array light source Collection utilization device for directly writing exposure machine to solve the problems referred to above.
To achieve these goals, the technical solution of the utility model is as follows:
A kind of UVLED array light source Collection utilization device for directly writing exposure machine, comprise UVLED luminescence chip, all collecting lens is placed with before described UVLED luminescence chip, all curved compound eye is placed with before collecting lens, UVLED luminescence chip, the quantity of collecting lens and curved compound eye is several, the light source of UVLED luminescence chip images in curved compound eye through collecting lens, multiplying power type minifier head group is placed with before curved compound eye, optical tunnel is placed with before multiplying power type minifier head group, the light of curved compound eye injection images in the entry port of optical tunnel through multiplying power type minifier head group, magnification lens group is placed with before optical tunnel, dmd chip is placed with before magnification lens group, the light that optical tunnel goes out optical port injection images in dmd chip surface through magnification lens group.
Described multiplying power type minifier head group comprises positive lens A and positive lens B, positive lens A and positive lens B is that mirror image is corresponding, the focal length of positive lens A is greater than the focal length of positive lens B, and the light of curved compound eye injection images in the entry port of optical tunnel through positive lens A and positive lens B; Described magnification lens group comprises positive lens C and positive lens D, positive lens C and positive lens D is that mirror image is corresponding, the focal length of positive lens C is less than the focal length of positive lens D, and the light that optical tunnel goes out optical port injection images in dmd chip surface through positive lens C and positive lens D.
Several described UVLED luminescence chips are that two-dimensional array mode is arranged, several collecting lenses are that two-dimensional array mode is arranged, several curved compound eye are that two-dimensional array mode is arranged, spacing distance between adjacent UVLED luminescence chip is equal with the spacing distance between adjacent collecting lens, and the spacing distance between adjacent collecting lens is equal with the spacing distance between adjacent curved compound eye.
Described curved compound eye is rectangle, and the face type of curved compound eye is sphere.
Described optical tunnel is rectangle, and the Aspect Ratio of optical tunnel is identical with the Aspect Ratio of dmd chip.
The quantity of described UVLED luminescence chip, collecting lens and curved compound eye is 6.
beneficial effect
A kind of UVLED array light source Collection utilization device for directly writing exposure machine of the present utility model, compared with prior art can collect UVLED array sub-light source, after carrying out even light shaping, image in DMD surface, reach required spot size.By the design of multiplying power type minifier head group, by multiple UVLED array sub-light source centralized collection on optical tunnel; By the design of optical tunnel, the light of collection is carried out even light and is shaped to rectangle; By the design of magnification lens group, by the image formation by rays after even light to dmd chip surface, plane of exposure can be projected to through projection lens.Have the advantages that structure is simple, with low cost, practicality is high.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Wherein, 1-UVLED luminescence chip, 2-collecting lens, 3-curved compound eye, 4-multiplying power type minifier head group, 5-positive lens A, 6-positive lens B, 7-optical tunnel, 8-magnification lens group, 9-positive lens C, 10-positive lens D, 11-DMD chip.
Embodiment
For making to have a better understanding and awareness architectural feature of the present utility model and effect of reaching, coordinating detailed description in order to preferred embodiment and accompanying drawing, being described as follows:
As shown in Figure 1, a kind of UVLED array light source Collection utilization device for directly writing exposure machine described in the utility model, comprise UVLED luminescence chip 1, UVLED luminescence chip 1 is UVLED light source, single UVLED light source luminescent power is low, therefore need to use multiple UVLED light source to form array, reach the object increasing overall power.The quantity of UVLED luminescence chip 1, collecting lens 2 and curved compound eye 3 is several, and the needs according to light source overall power design, and usually the quantity of UVLED luminescence chip 1, collecting lens 2 and curved compound eye 3 all can be designed to 6.All be placed with collecting lens 2 before UVLED luminescence chip 1, collecting lens 2 is the combination of two convex lens, can play the effect of collecting UVLED luminescence chip 1 light source, also by UVLED luminescence chip 1 amplification imaging in curved compound eye 3.All be placed with curved compound eye 3 before collecting lens 2, curved compound eye 3 is rectangle, and the face type of curved compound eye 3 is sphere, and the light source of UVLED luminescence chip 1 images in curved compound eye 3 through collecting lens 2.Multiple UVLED luminescence chip 1 is arranged in two-dimensional array mode, then multiple collecting lens 2 is also arranged in two-dimensional array mode, and same multiple curved compound eye 3 is also arranged in two-dimensional array mode.Spacing distance between spacing distance between spacing distance between adjacent UVLED luminescence chip 1, adjacent collecting lens 2, adjacent curved compound eye 3 is all equal.
Be placed with multiplying power type minifier head group 4 before curved compound eye 3, be placed with optical tunnel 7 before multiplying power type minifier head group 4, the light that curved compound eye 3 penetrates images in the entry port of optical tunnel 7 through multiplying power type minifier head group 4.Multiplying power type minifier head group 4 is for reducing multiplying power, and it comprises positive lens A5 and positive lens B6.Positive lens A5 and positive lens B6 is that mirror image is corresponding, and the focal length of positive lens A5 is greater than the focal length of positive lens B6, and the light that curved compound eye 3 penetrates images in the entry port of optical tunnel 7 through positive lens A5 and positive lens B6.Focal length due to positive lens A5 is greater than the focal length of positive lens B6, and the light that therefore curved compound eye 3 penetrates reduces multiplying power on positive lens A5 and positive lens B6, thus can image in the entry port of optical tunnel 7.Optical tunnel 7 is for carrying out even light by the light of collection and being shaped to rectangle, and therefore optical tunnel 7 is rectangle.After light is formed even light by optical tunnel 7, light now could be used for dmd chip 11 surface, at this by utilizing optical tunnel 7 by the even light shaping of light source of multiple UVLED luminescence chip 1, thus reaches the use needs on dmd chip 11 surface.
Magnification lens group 8 is placed with before optical tunnel 7, magnification lens group 8 is for by the light enlargement ratio after shaping, the light that optical tunnel 7 goes out optical port injection images in dmd chip 11 surface through magnification lens group 8, and the Aspect Ratio of optical tunnel 7 can be identical with the Aspect Ratio of dmd chip 11.Magnification lens group 8 comprises positive lens C9 and positive lens D10, positive lens C9 and positive lens D10 is that mirror image is corresponding, the focal length of positive lens C9 is less than the focal length of positive lens D10, and the light that optical tunnel 7 goes out optical port injection images in dmd chip 11 surface through positive lens C9 and positive lens D10.In like manner, focal length due to positive lens C9 is less than the focal length of positive lens D10, optical tunnel 7 goes out the light of optical port injection at positive lens C9 and positive lens D10 enlargement ratio, by the image formation by rays after even for shaping light to dmd chip 11 surface, thus can project to plane of exposure through projection lens.
When reality uses, multiple UVLED luminescence chip 1 finds light source, multiple curved compound eye 3 is imaged in after multiple collecting lens 2 carries out source-collector, the light multiplying power that multiple curved compound eye 3 produces is larger, the entry port of optical tunnel 7 cannot be imaged in, after multiplying power being reduced by multiplying power type minifier head group 4, image in the entry port of optical tunnel 7.Optical tunnel 7 by after even for light light, shaping, then images in dmd chip 11 surface after being amplified by light by magnification lens group 8, then projects to plane of exposure through projection lens.
More than show and describe ultimate principle of the present utility model, principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; the just principle of the present utility model described in above-described embodiment and instructions; under the prerequisite not departing from the utility model spirit and scope, the utility model also has various changes and modifications, and these changes and improvements all fall in claimed scope of the present utility model.The protection domain that the utility model requires is defined by appending claims and equivalent thereof.
Claims (6)
1. one kind for directly writing the UVLED array light source Collection utilization device of exposure machine, comprise UVLED luminescence chip (1), it is characterized in that: described UVLED luminescence chip (1) is front is all placed with collecting lens (2), collecting lens (2) is front is all placed with curved compound eye (3), UVLED luminescence chip (1), the quantity of collecting lens (2) and curved compound eye (3) is several, the light source of UVLED luminescence chip (1) images in curved compound eye (3) through collecting lens (2), curved compound eye (3) is front is placed with multiplying power type minifier head group (4), multiplying power type minifier head group (4) is front is placed with optical tunnel (7), the light that curved compound eye (3) penetrates images in the entry port of optical tunnel (7) through multiplying power type minifier head group (4), optical tunnel (7) is front is placed with magnification lens group (8), magnification lens group (8) is front is placed with dmd chip (11), the light that optical tunnel (7) goes out optical port injection images in dmd chip (11) surface through magnification lens group (8).
2. a kind of UVLED array light source Collection utilization device for directly writing exposure machine according to claim 1, it is characterized in that: described multiplying power type minifier head group (4) comprises positive lens A(5) and positive lens B(6), positive lens A(5) and positive lens B(6) both are corresponding in mirror image, positive lens A(5) focal length be greater than positive lens B(6) focal length, the light that curved compound eye (3) penetrates is through positive lens A(5) and positive lens B(6) image in the entry port of optical tunnel (7); Described magnification lens group (8) comprises positive lens C(9) and positive lens D(10), positive lens C(9) and positive lens D(10) both are corresponding in mirror image, positive lens C(9) focal length be less than positive lens D(10) focal length, optical tunnel (7) goes out the light of optical port injection through positive lens C(9) and positive lens D(10) to image in dmd chip (11) surperficial.
3. a kind of UVLED array light source Collection utilization device for directly writing exposure machine according to claim 1, it is characterized in that: several described UVLED luminescence chips (1) are arranged in two-dimensional array mode, several collecting lenses (2) are arranged in two-dimensional array mode, several curved compound eye (3) are arranged in two-dimensional array mode, spacing distance between adjacent UVLED luminescence chip (1) is equal with the spacing distance between adjacent collecting lens (2), spacing distance between adjacent collecting lens (2) is equal with the spacing distance between adjacent curved compound eye (3).
4. a kind of UVLED array light source Collection utilization device for directly writing exposure machine according to claim 1, it is characterized in that: described curved compound eye (3) is rectangle, the face type of curved compound eye (3) is sphere.
5. a kind of UVLED array light source Collection utilization device for directly writing exposure machine according to claim 1, it is characterized in that: described optical tunnel (7) is rectangle, the Aspect Ratio of optical tunnel (7) is identical with the Aspect Ratio of dmd chip (11).
6. a kind of UVLED array light source Collection utilization device for directly writing exposure machine according to claim 1, is characterized in that: the quantity of described UVLED luminescence chip (1), collecting lens (2) and curved compound eye (3) is 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520691192.5U CN204945617U (en) | 2015-09-09 | 2015-09-09 | A kind of UVLED array light source Collection utilization device for directly writing exposure machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520691192.5U CN204945617U (en) | 2015-09-09 | 2015-09-09 | A kind of UVLED array light source Collection utilization device for directly writing exposure machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204945617U true CN204945617U (en) | 2016-01-06 |
Family
ID=55013027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520691192.5U Active CN204945617U (en) | 2015-09-09 | 2015-09-09 | A kind of UVLED array light source Collection utilization device for directly writing exposure machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204945617U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105116689A (en) * | 2015-09-09 | 2015-12-02 | 合肥芯碁微电子装备有限公司 | UVLED array light source collection and utilization device used for direct writing exposure machine |
| CN106353972A (en) * | 2016-11-03 | 2017-01-25 | 河南百合特种光学研究院有限公司 | LED composite light homogenizing device and exposure system using same |
| CN107726060A (en) * | 2017-11-06 | 2018-02-23 | 中国科学院重庆绿色智能技术研究院 | A kind of array light source lighting device for exposure machine |
-
2015
- 2015-09-09 CN CN201520691192.5U patent/CN204945617U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105116689A (en) * | 2015-09-09 | 2015-12-02 | 合肥芯碁微电子装备有限公司 | UVLED array light source collection and utilization device used for direct writing exposure machine |
| CN106353972A (en) * | 2016-11-03 | 2017-01-25 | 河南百合特种光学研究院有限公司 | LED composite light homogenizing device and exposure system using same |
| CN107726060A (en) * | 2017-11-06 | 2018-02-23 | 中国科学院重庆绿色智能技术研究院 | A kind of array light source lighting device for exposure machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204945617U (en) | A kind of UVLED array light source Collection utilization device for directly writing exposure machine | |
| CN109031899A (en) | A kind of high-resolution high efficiency projecting etching imaging system and exposure method | |
| CN103543609A (en) | Double-mercury lamp spliced exposure system for lithography equipment | |
| CN208953889U (en) | A kind of LED projection illumination photolithographic imaging system | |
| CN104460023A (en) | Speckle-eliminating laser projection light source system | |
| CN104880898A (en) | DLP projector based on laser light source | |
| CN205535304U (en) | Light path structure of LED pattern lamp | |
| CN202976114U (en) | Bar code reader with special focusing patterns | |
| CN105116689A (en) | UVLED array light source collection and utilization device used for direct writing exposure machine | |
| CN207301622U (en) | One kind is based on Micro-LED maskless projection scanning formula ultraviolet exposure machines | |
| CN102955228A (en) | Machine vision imaging lens structure | |
| CN109254503B (en) | LED projection illumination photoetching imaging system | |
| CN101114027A (en) | Compound eye lens detector | |
| CN204856523U (en) | Electronic scanning rifle enlarges scanning instrument | |
| CN104458513A (en) | Device for measuring 3D size and distribution of micro particles | |
| CN208752391U (en) | A kind of high-resolution high efficiency projecting etching imaging system | |
| JP2014010428A (en) | Line illumination apparatus | |
| CN204945619U (en) | A kind of photoetching telecentric objective with multiplying power fine adjustment function | |
| CN109521646A (en) | One kind projecting fixed ultraviolet exposure machine based on Micro-LED maskless | |
| CN206048813U (en) | A kind of 3D printing equipment projector light intensity autoalign unit | |
| CN206270655U (en) | A kind of LED array light source exposure system | |
| CN201867530U (en) | Infrared night vision telephoto lens | |
| CN206523139U (en) | New Instrument for Crack Width | |
| CN202486496U (en) | Novel aperture diaphragm with high energy utilization ratio | |
| CN203163690U (en) | Image measuring instrument |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 230088 the 11 level of F3 two, two innovation industrial park, No. 2800, innovation Avenue, Hi-tech Zone, Hefei, Anhui. Patentee after: Hefei Xinqi microelectronics equipment Co., Ltd Address before: 230088, Hefei province high tech Zone, 2800 innovation Avenue, 533 innovation industry park, H2 building, room two, Anhui Patentee before: HEFEI XINQI MICROELECTRONIC EQUIPMENT CO., LTD. |
|
| CP03 | Change of name, title or address |