CN204913569U - Work piece polishing dish contact State adjustable burnishing device - Google Patents

Work piece polishing dish contact State adjustable burnishing device Download PDF

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Publication number
CN204913569U
CN204913569U CN201520455139.5U CN201520455139U CN204913569U CN 204913569 U CN204913569 U CN 204913569U CN 201520455139 U CN201520455139 U CN 201520455139U CN 204913569 U CN204913569 U CN 204913569U
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CN
China
Prior art keywords
polishing
bulb
workpiece
disk
polishing dish
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Expired - Fee Related
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CN201520455139.5U
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Chinese (zh)
Inventor
邓乾发
吕冰海
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Zhejiang University of Technology ZJUT
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Zhejiang University of Technology ZJUT
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Priority to CN201520455139.5U priority Critical patent/CN204913569U/en
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Abstract

The utility model provides a work piece polishing dish contact State adjustable burnishing device, includes polishing dish and work piece polishing dish contact State guiding mechanism, work piece polishing dish contact State guiding mechanism's reference disk top surface and bulb lid fixed connection, there is the bulb in the bulb lid, the bulb with the reference disk is the point contact, the bulb is connected with the lower extreme of adjusting lever, the upper end and the adjustment knob of adjusting lever are connected, adjustment knob installs the clamp ring outward, adjustment knob's the outer wall and the inner wall threaded connection of adjusting sleeve, adjusting sleeve fixed mounting is on the base, place between the bottom surface of base and the polishing dish by the processing work piece, the base on install an amesdial, amesdial table pole with the reference disk contacts for instruct the reference disk with base relative position changes. The utility model discloses can realize that substrate high accuracy, few / super smooth surface of not damaged process the requirement.

Description

The burnishing device that workpiece polishing disk contact condition is adjustable
Technical field
The utility model relates to Precision and Ultra-precision Machining technical field, the burnishing device that especially a kind of workpiece polishing disk contact condition is adjustable.
Background technology
Polishing technology reduces surface roughness, removal damage layer, obtains the main whole manufacturing process on ultra-smooth not damaged surface.For substrate (especially semiconductor material substrate) few/not damaged, high accuracy polishing requirement, the numerous finishing method of software engineering researchers invent, mainly comprises the polishing of pitch dish, metal dish polishing, chemically mechanical polishing, liquid level slides polishing, hydration polishing, elastic emission machining, float polishing, magnetic suspension polishing, electrophoresis polishing etc.These finishing methods, can be divided into three types according to workpiece in process and the gap state between polishing disk (or polishing tool): immediately touch polishing, accurate contact polishing and contactless polishing.
The polishing of pitch dish and metal dish polishing belong to immediately touch polishing, workpiece and the laminating of polishing disk intimate surface.By the mutual finishing of workpiece and polishing disk, good machining accuracy can be obtained.But because material act as master with the removal of the machinery of abrasive particle, the distortion of lattice equivalent damage produced by mechanical force is inevitable.Chemically mechanical polishing (CMP) is the basic skills realizing substrate Ultra-precision Turning at present.Load on workpiece is supported jointly by polishing disk and polishing liquid film, and in polishing disk and polishing fluid, the common polishing substrate surface of abrasive particle, belongs to accurate contact polishing.Although this processing mode contributes to obtaining good machining accuracy and smooth surface, but owing to there is the mechanical force of polishing disk and substrate surface, there is the defects such as distortion by inevitably causing the top layer lattice of polishing workpiece finished surface, the surface damage layer depth that chemically mechanical polishing causes is approximately 55nm, and this will badly influence the performance of device made by substrate.Elastic emission machining, floating polishing and hydration polishing add man-hour, form larger gap, belong to contactless polishing between workpiece and polishing disk (or polishing tool).This kind of processing method is mainly impacted surface of the work with polishing fluid chemical action and abrasive particle and is removed material, not only can not reduce front operation machining accuracy, but also not damaged super-smooth surface can be obtained, but removal efficiency is general lower, therefore general only as last one finishing step obtaining super-smooth surface.In existing finishing method, the contact condition between workpiece and polishing disk is close contact state, accurate contact condition and contactless state three kinds of contact conditions a kind of situations wherein.For eliminating the damage layer produced in immediately touch polishing and accurate contact polishing process, generally all need to increase by one chemical polishing again or chemical attack operation realizes.
Above finishing method is analyzed known: the close contact state of workpiece and polishing disk is conducive to obtaining good machining accuracy and higher material removing rate, but easily cause workpiece surface damage, non-contacting polishing more easily realizes undamaged polishing, but little, the long-time processing of removal amount can not ensure excellent surface roughness and flatness.For obtaining good machining accuracy and not damaged surface, need two procedures, namely preceding working procedure adopts close contact polishing to ensure machining accuracy, and later process adopts noncontact polishing to remove machining damage layer.For traditional substrate polishing apparatus, very difficult adaptation substrate (especially semiconductor material substrate) is current in enormous quantities, the requirement of high accuracy, highly-efficient processing.
Therefore, researching and developing one, to be applied to substrate (especially semiconductor material substrate) few/particularly necessary without surface damage, high-precision ultra-precision processing apparatus.
Summary of the invention
The high accuracy of substrate (especially semiconductor material substrate) cannot be applicable in order to overcome existing polishing mode, deficiency that few/not damaged super smooth surface processing requires, the utility model proposes a kind of adjustable burnishing device of workpiece polishing disk contact condition that can realize substrate high accuracy, few/not damaged super smooth surface processing requirement.
The technical scheme in the invention for solving the technical problem is:
The burnishing device that a kind of workpiece polishing disk contact condition is adjustable, comprise polishing disk and workpiece polishing disk contact condition guiding mechanism, the reference disk end face of described workpiece polishing disk contact condition guiding mechanism is fixedly connected with bulb lid, bulb is had in described bulb lid, described bulb and described reference disk are point cantact, described bulb is connected with the lower end of adjusting lever, the upper end of described adjusting lever is connected with adjustment knob, outside described adjustment knob, clamp ring is installed, the described outer wall of adjustment knob is connected with the inner thread of adjusting sleeve, described adjusting sleeve is fixedly mounted on pedestal, workpiece to be machined is placed between the bottom surface of described pedestal and polishing disk, described pedestal is provided with an amesdial, described amesdial table bar contacts with described reference disk, be used to indicate reference disk and described pedestal relative position changes.
Further, gap is had between described bulb lid and described adjusting lever.
Technical conceive of the present utility model is: the close contact state of workpiece and polishing disk is conducive to obtaining good machining accuracy and higher material removing rate, but easily cause workpiece surface damage, non-contacting chemical polishing processing more easily realizes undamaged polishing, but little, the long-time processing of removal amount can not ensure excellent surface roughness and flatness.By at polishing process, adopt workpiece polishing disk contact condition guiding mechanism, adopt when polishing is initial close contact polishing to ensure work pieces process form accuracy, then adjust workpiece and polishing disk contact condition, adopt noncontact polishing to remove the surface of the work machining damage layer of close contact polishing.Realize the high accuracy of substrate, few/not damaged super smooth surface processing at a procedure, improve overall processing efficiency, reduce production cost.
The beneficial effects of the utility model are mainly manifested in: 1. by the contact condition in controlled working process between workpiece and polishing disk, workpiece and polishing disk is made to be contactless state by initial close contact state transfer, thus workpiece material is removed by initial mechanical removing method, progressively change machinery and chemically composited removing method into, until the chemistry of terminal stage is removed and abrasive particle impacts removing method.2. remove process by the machinery of initial close contact polishing mode, combined high precision polishing disk and corresponding technique ensure work pieces process form accuracy.Again by polishing fluid chemical action and abrasive particle percussion process under terminal stage cordless, remove workpiece machining surface damage layer, realize the high accuracy of substrate, few/not damaged super smooth surface processing.
Accompanying drawing explanation
Fig. 1 is in polishing process, and workpiece and polishing disk three kinds of contact condition schematic diagrames, (a) is close contact state, and (b) is accurate contact condition, and (c) is contactless state.
Fig. 2 is workpiece polishing disk contact condition guiding mechanism structural representation.
Fig. 3 is that on workpiece polishing disk contact condition guiding mechanism pedestal, schematic diagram placed by workpiece.
Fig. 4 is the schematic diagram of the adjustable burnishing device of workpiece polishing disk contact condition.
Detailed description of the invention
Below in conjunction with accompanying drawing, the utility model is further described.
With reference to figure 1 ~ Fig. 4, the burnishing device that a kind of workpiece polishing disk contact condition is adjustable, comprise polishing disk and workpiece polishing disk contact condition guiding mechanism, the end face of the reference disk 1 of described workpiece polishing disk contact condition guiding mechanism is fixedly connected with bulb lid 2, bulb 3 is had in described bulb lid, described bulb 3 is point cantact with described reference disk 1, described bulb 3 is connected with the lower end of adjusting lever 4, the upper end of described adjusting lever 4 is connected with adjustment knob 5, outside described adjustment knob 5, clamp ring 6 is installed, the outer wall of described adjustment knob 5 is connected with the inner thread of adjusting sleeve 7, described adjusting sleeve 7 adopts alignment pin to be connected with pedestal 8, workpiece to be machined 9 is placed between described pedestal 8 bottom surface and polishing disk, described pedestal 8 is provided with an amesdial 10, described amesdial 10 is shown bar and is contacted with described reference disk 1, be used to indicate reference disk 1 to change with described pedestal 8 relative position.
Have gap between described bulb lid 2 and described adjusting lever 4, described bulb 2 is point cantact with described reference disk 1, guarantees the parallel contact of described reference disk 1 and polishing disk 13.
Workpiece polishing disk contact condition guiding mechanism is adopted to regulate close contact polishing or noncontact polishing condition, add man-hour, the workpiece polishing disk contact condition guiding mechanism that workpiece 9 is housed is placed on polishing disk 13, polishing fluid 12 enters the machining area of described polishing disk 13 from inlet 11, polishing disk 13 is arranged in frame 14, adopt close contact polishing to ensure work pieces process form accuracy when polishing is initial, then adjust workpiece and polishing disk contact condition, adopt noncontact polishing to remove the surface of the work machining damage layer of close contact polishing; On described workpiece, load, described polishing disk rotating speed, polishing fluid concentration and polishing fluid flow are adjustable.
Further, described adjustment knob 5, clamp ring 6, adjusting sleeve 7 form adjustable diameter and screw adjusting mechanism, poor with the relative altitude of described pedestal 8 on polishing disk 13 for adjusting described reference disk 1.
In the present embodiment, with GaAs substrate for processing object, adopt nonwoven cloth material polishing disk, polishing fluid is the concentration 0.1%NaOCl aqueous solution, wherein adds the SiO that quality than concentration 5wt%, granularity is 0.5 μm 2particle.Load is 6kPa, polishing disk rotating speed 40r/min.Described workpiece is pasted onto the pedestal of described workpiece-polishing disk contact condition guiding mechanism, then described workpiece-polishing disk contact condition guiding mechanism is placed on a benchmark flat board, adopt printing opacity irradiation, adjust described adjusting lever until described work pieces process face is completely concordant with described reference disk, the adjustment turn-knob described in locking.Described amesdial table bar is contacted with described reference disk, then presses amesdial bar, make described amesdial dish little pointer revolution indicating graduation value be 6, locking dial gage base.Under this close contact mode, polishing workpiece 30Min.Unclamp the clamp ring of described adjustment turn-knob again, adjust described adjusting lever, make the little pointer indicated value of amesdial dish be 0.Now, the difference in height of workpiece described polishing disk relative to reference disk is 6mm, and workpiece and polishing disk are contactless state, polishing workpiece 30Min.Adopt the workpiece surface roughness after the method polishing to be better than the workpiece surface roughness of the finishing method without adjustment contact condition, surface damage layer is less.

Claims (2)

1. the burnishing device that a workpiece polishing disk contact condition is adjustable, it is characterized in that: comprise polishing disk and workpiece polishing disk contact condition guiding mechanism, the reference disk end face of described workpiece polishing disk contact condition guiding mechanism is fixedly connected with bulb lid, bulb is had in described bulb lid, described bulb and described reference disk are point cantact, described bulb is connected with the lower end of adjusting lever, the upper end of described adjusting lever is connected with adjustment knob, outside described adjustment knob, clamp ring is installed, the described outer wall of adjustment knob is connected with the inner thread of adjusting sleeve, described adjusting sleeve is fixedly mounted on pedestal, workpiece to be machined is placed between the bottom surface of described pedestal and polishing disk, described pedestal is provided with an amesdial, described amesdial table bar contacts with described reference disk, be used to indicate reference disk and described pedestal relative position changes.
2. the burnishing device that workpiece polishing disk contact condition as claimed in claim 1 is adjustable, is characterized in that: have gap between described bulb lid and described adjusting lever.
CN201520455139.5U 2015-06-26 2015-06-26 Work piece polishing dish contact State adjustable burnishing device Expired - Fee Related CN204913569U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520455139.5U CN204913569U (en) 2015-06-26 2015-06-26 Work piece polishing dish contact State adjustable burnishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520455139.5U CN204913569U (en) 2015-06-26 2015-06-26 Work piece polishing dish contact State adjustable burnishing device

Publications (1)

Publication Number Publication Date
CN204913569U true CN204913569U (en) 2015-12-30

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CN201520455139.5U Expired - Fee Related CN204913569U (en) 2015-06-26 2015-06-26 Work piece polishing dish contact State adjustable burnishing device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107052910A (en) * 2016-12-09 2017-08-18 浙江工业大学 A kind of liquid hydrodynamic floating grinding and polishing integrated device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107052910A (en) * 2016-12-09 2017-08-18 浙江工业大学 A kind of liquid hydrodynamic floating grinding and polishing integrated device
CN107052910B (en) * 2016-12-09 2022-12-02 浙江工业大学 Hydraulic pressure suspension grinding and polishing integrated device

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151230

Termination date: 20180626