CN105127880A - Ultraprecise polishing method capable of actively controlling workpiece material to remove mechanism conversion - Google Patents
Ultraprecise polishing method capable of actively controlling workpiece material to remove mechanism conversion Download PDFInfo
- Publication number
- CN105127880A CN105127880A CN201510366852.7A CN201510366852A CN105127880A CN 105127880 A CN105127880 A CN 105127880A CN 201510366852 A CN201510366852 A CN 201510366852A CN 105127880 A CN105127880 A CN 105127880A
- Authority
- CN
- China
- Prior art keywords
- polishing
- workpiece
- disk
- contact
- machining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Disclosed is an ultraprecise polishing method capable of actively controlling a workpiece material to remove mechanism conversion. According to the method, a workpiece polishing disc contact state adjusting mechanism is adopted to adjust a close-contact polishing state or a non-contact polishing state, and in the machining process, the workpiece polishing disc contact state adjusting mechanism with a workpiece is placed on a polishing disc; polishing liquid enters a machining area of the polishing disc from an injection opening, and in the initial process of polishing, close-contact polishing is adopted to ensure the machining shape precision of the workpiece; then, the contact state between the workpiece and the polishing disc is adjusted; non-contact polishing is adopted to remove a machining damage layer on the surface of the workpiece obtained after close-contact polishing; and loads on the workpiece, the rotating speed of the polishing disc, the concentrate of the polishing liquid and the flow of the polishing liquid are adjustable. According to the method, high-precision and fewer/non-damage ultra-smooth surface machining requirement of a substrate can be met.
Description
Technical field
The present invention relates to Precision and Ultra-precision Machining technical field, it is Ultraprecise polished that especially a kind of ACTIVE CONTROL workpiece material cutting mechanisms changes.
Background technology
Polishing technology reduces surface roughness, removal damage layer, obtains the main whole manufacturing process on ultra-smooth not damaged surface.For substrate (especially semiconductor material substrate) few/not damaged, high accuracy polishing requirement, the numerous finishing method of software engineering researchers invent, mainly comprises the polishing of pitch dish, metal dish polishing, chemically mechanical polishing, liquid level slides polishing, hydration polishing, elastic emission machining, float polishing, magnetic suspension polishing, electrophoresis polishing etc.These finishing methods, can be divided into three types according to workpiece in process and the gap state between polishing disk (or polishing tool): immediately touch polishing, accurate contact polishing and contactless polishing.
The polishing of pitch dish and metal dish polishing belong to immediately touch polishing, workpiece and the laminating of polishing disk intimate surface.By the mutual finishing of workpiece and polishing disk, good machining accuracy can be obtained.But because material act as master with the removal of the machinery of abrasive particle, the distortion of lattice equivalent damage produced by mechanical force is inevitable.Chemically mechanical polishing (CMP) is the basic skills realizing substrate Ultra-precision Turning at present.Load on workpiece is supported jointly by polishing disk and polishing liquid film, and in polishing disk and polishing fluid, the common polishing substrate surface of abrasive particle, belongs to accurate contact polishing.Although this processing mode contributes to obtaining good machining accuracy and smooth surface, but owing to there is the mechanical force of polishing disk and substrate surface, there is the defects such as distortion by inevitably causing the top layer lattice of polishing workpiece finished surface, the surface damage layer depth that chemically mechanical polishing causes is approximately 55nm, and this will badly influence the performance of device made by substrate.Elastic emission machining, floating polishing and hydration polishing add man-hour, form larger gap, belong to contactless polishing between workpiece and polishing disk (or polishing tool).This kind of processing method is mainly impacted surface of the work with polishing fluid chemical action and abrasive particle and is removed material, not only can not reduce front operation machining accuracy, but also not damaged super-smooth surface can be obtained, but removal efficiency is general lower, therefore general only as last one finishing step obtaining super-smooth surface.In existing finishing method, the contact condition between workpiece and polishing disk is close contact state, accurate contact condition and contactless state three kinds of contact conditions a kind of situations wherein.For eliminating the damage layer produced in immediately touch polishing and accurate contact polishing process, generally all need to increase by one chemical polishing again or chemical attack operation realizes.
Above finishing method is analyzed known: the close contact state of workpiece and polishing disk is conducive to obtaining good machining accuracy and higher material removing rate, but easily cause workpiece surface damage, non-contacting polishing more easily realizes undamaged polishing, but removal amount is little, long processing time can not ensure excellent surface roughness and flatness.For obtaining good machining accuracy and not damaged surface, need two procedures, namely preceding working procedure adopts close contact polishing to ensure machining accuracy, and later process adopts noncontact polishing to remove machining damage layer.For traditional substrate polishing apparatus, very difficult adaptation substrate (especially semiconductor material substrate) is current in enormous quantities, the requirement of high accuracy, highly-efficient processing.
Therefore, researching and developing one, to be applied to substrate (especially semiconductor material substrate) few/particularly necessary without surface damage, high-precision ultraprecise processing method.
Summary of the invention
The high accuracy of substrate (especially semiconductor material substrate) cannot be applicable in order to overcome existing finishing method, deficiency that few/not damaged super smooth surface processing requires, the present invention proposes and a kind ofly can realize substrate high accuracy, Ultraprecise polished method that the ACTIVE CONTROL workpiece material cutting mechanisms of few/not damaged super smooth surface processing requirement changes.
The present invention solves the technical scheme that its technical problem takes:
A kind of Ultraprecise polished method that ACTIVE CONTROL workpiece material cutting mechanisms changes, the method adopts workpiece polishing disk contact condition guiding mechanism to regulate close contact polishing or noncontact polishing condition, the reference disk end face of described workpiece polishing disk contact condition guiding mechanism is fixedly connected with bulb lid, bulb is had in described bulb lid, described bulb and described reference disk are point cantact, described bulb is connected with the lower end of adjusting lever, the upper end of described adjusting lever is connected with adjustment knob, outside described adjustment knob, clamp ring is installed, the described outer wall of adjustment knob is connected with the inner thread of adjusting sleeve, described adjusting sleeve is fixedly mounted on pedestal, workpiece to be machined is placed in the bottom surface of described pedestal, described pedestal is provided with an amesdial, described amesdial table bar contacts with described reference disk, be used to indicate reference disk and described pedestal relative position changes,
Add man-hour, the workpiece polishing disk contact condition guiding mechanism that workpiece is housed is placed on polishing disk, polishing fluid enters the machining area of described polishing disk from inlet, adopt close contact polishing to ensure work pieces process form accuracy when polishing is initial, then adjust workpiece and polishing disk contact condition, adopt noncontact polishing to remove the surface of the work machining damage layer of close contact polishing; On described workpiece, load, described polishing disk rotating speed, polishing fluid concentration and polishing fluid flow are adjustable.
Further, described adjustment knob, clamp ring, adjusting sleeve composition adjustable diameter and screw adjusting mechanism, for adjusting described reference disk and the relative altitude of described pedestal on polishing disk is poor.
Technical conceive of the present invention is: the close contact state of workpiece and polishing disk is conducive to obtaining good machining accuracy and higher material removing rate, but easily cause workpiece surface damage, non-contacting chemical polishing processing more easily realizes undamaged polishing, but little, the long-time processing of removal amount can not ensure excellent surface roughness and flatness.By at polishing process, adopt workpiece-polishing disk contact condition guiding mechanism, adopt when polishing is initial close contact polishing to ensure work pieces process form accuracy, then adjust workpiece and polishing disk contact condition, adopt noncontact polishing to remove the surface of the work machining damage layer of close contact polishing.Realize the high accuracy of substrate, few/not damaged super smooth surface processing at a procedure, improve overall processing efficiency, reduce production cost.
Beneficial effect of the present invention is mainly manifested in: 1. by the contact condition in controlled working process between workpiece and polishing disk, workpiece and polishing disk is made to be contactless state by initial close contact state transfer, thus workpiece material is removed by initial mechanical removing method, progressively change machinery and chemically composited removing method into, until the chemistry of terminal stage is removed and abrasive particle impacts removing method.2. remove process by the machinery of initial close contact polishing mode, combined high precision polishing disk and corresponding technique ensure work pieces process form accuracy.Again by polishing fluid chemical action and abrasive particle percussion process under terminal stage cordless, remove workpiece machining surface damage layer, realize the high accuracy of substrate, few/not damaged super smooth surface processing.
Accompanying drawing explanation
Fig. 1 is in polishing process, and workpiece and polishing disk three kinds of contact condition schematic diagrames, (a) is close contact state, and (b) is accurate contact condition, and (c) is contactless state.
Fig. 2 is workpiece-polishing disk contact condition guiding mechanism structural representation.
Fig. 3 is that on workpiece-polishing disk contact condition guiding mechanism pedestal, schematic diagram placed by workpiece.
Fig. 4 is the processing unit (plant) schematic diagram realizing the method.
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described.
With reference to figure 1 ~ Fig. 4, a kind of Ultraprecise polished method that ACTIVE CONTROL workpiece material cutting mechanisms changes, the method adopts workpiece polishing disk contact condition guiding mechanism to regulate close contact polishing or noncontact polishing condition, the end face of the reference disk 1 of described workpiece polishing disk contact condition guiding mechanism is fixedly connected with bulb lid 2, bulb 3 is had in described bulb lid, described bulb 3 is point cantact with described reference disk 1, described bulb 3 is connected with the lower end of adjusting lever 4, the upper end of described adjusting lever 4 is connected with adjustment knob 5, outside described adjustment knob 5, clamp ring 6 is installed, the outer wall of described adjustment knob 5 is connected with the inner thread of adjusting sleeve 7, described adjusting sleeve 7 adopts alignment pin to be connected with pedestal 8, workpiece to be machined 9 is placed in described pedestal 8 bottom surface, described pedestal 8 is provided with an amesdial 10, described amesdial 10 is shown bar and is contacted with described reference disk 1, be used to indicate reference disk 1 to change with described pedestal 8 relative position.
Add man-hour, the workpiece polishing disk contact condition guiding mechanism that workpiece 9 is housed is placed on polishing disk 13, polishing fluid 12 enters the machining area of described polishing disk 13 from inlet 11, polishing disk 13 is arranged in frame 14, adopt close contact polishing to ensure work pieces process form accuracy when polishing is initial, then adjust workpiece and polishing disk contact condition, adopt noncontact polishing to remove the surface of the work machining damage layer of close contact polishing; On described workpiece, load, described polishing disk rotating speed, polishing fluid concentration and polishing fluid flow are adjustable.
Further, described adjustment knob 5, clamp ring 6, adjusting sleeve 7 form adjustable diameter and screw adjusting mechanism, poor with the relative altitude of described pedestal 8 on polishing disk 13 for adjusting described reference disk 1.
Have gap between described bulb lid 2 and described adjusting lever 4, described bulb 2 is point cantact with described reference disk 1, guarantees the parallel contact of described reference disk 1 and polishing disk 13.
In the present embodiment, example: with GaAs substrate for processing object, adopt nonwoven cloth material polishing disk, polishing fluid is the concentration 0.1%NaOCl aqueous solution, wherein adds the SiO that quality than concentration 5wt%, granularity is 0.5 μm
2particle.Load is 6kPa, polishing disk rotating speed 40r/min.Described workpiece is pasted onto the pedestal of described workpiece-polishing disk contact condition guiding mechanism, then described workpiece-polishing disk contact condition guiding mechanism is placed on a benchmark flat board, adopt printing opacity irradiation, adjust described adjusting lever until described work pieces process face is completely concordant with described reference disk, the adjustment turn-knob described in locking.Described amesdial table bar is contacted with described reference disk, then presses amesdial bar, make described amesdial dish little pointer revolution indicating graduation value be 6, locking dial gage base.Under this close contact mode, polishing workpiece 30Min.Unclamp the clamp ring of described adjustment turn-knob again, adjust described adjusting lever, make the little pointer indicated value of amesdial dish be 0.Now, the difference in height of workpiece described polishing disk relative to reference disk is 6mm, and workpiece and polishing disk are contactless state, polishing workpiece 30Min.Adopt the workpiece surface roughness after the method polishing to be better than the workpiece surface roughness of the finishing method without adjustment contact condition, surface damage layer is less.
Claims (2)
1. the Ultraprecise polished method of an ACTIVE CONTROL workpiece material cutting mechanisms transformation, it is characterized in that: the method adopts workpiece polishing disk contact condition guiding mechanism to regulate close contact polishing or noncontact polishing condition, the reference disk end face of described workpiece polishing disk contact condition guiding mechanism is fixedly connected with bulb lid, bulb is had in described bulb lid, described bulb and described reference disk are point cantact, described bulb is connected with the lower end of adjusting lever, the upper end of described adjusting lever is connected with adjustment knob, outside described adjustment knob, clamp ring is installed, the described outer wall of adjustment knob is connected with the inner thread of adjusting sleeve, described adjusting sleeve is fixedly mounted on pedestal, workpiece to be machined is placed in the bottom surface of described pedestal, described pedestal is provided with an amesdial, described amesdial table bar contacts with described reference disk, be used to indicate reference disk and described pedestal relative position changes,
Add man-hour, the workpiece polishing disk contact condition guiding mechanism that workpiece is housed is placed on polishing disk, polishing fluid enters the machining area of described polishing disk from inlet, adopt close contact polishing to ensure work pieces process form accuracy when polishing is initial, then adjust workpiece and polishing disk contact condition, adopt noncontact polishing to remove the surface of the work machining damage layer of close contact polishing; On described workpiece, load, described polishing disk rotating speed, polishing fluid concentration and polishing fluid flow are adjustable.
2. the Ultraprecise polished method of a kind of ACTIVE CONTROL workpiece material cutting mechanisms transformation as claimed in claim 1, it is characterized in that: described adjustment knob, clamp ring, adjusting sleeve composition adjustable diameter and screw adjusting mechanism, for adjusting described reference disk and the relative altitude of described pedestal on polishing disk is poor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510366852.7A CN105127880B (en) | 2015-06-26 | 2015-06-26 | A kind of Ultraprecise polished method of active control workpiece material cutting mechanisms transformation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510366852.7A CN105127880B (en) | 2015-06-26 | 2015-06-26 | A kind of Ultraprecise polished method of active control workpiece material cutting mechanisms transformation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105127880A true CN105127880A (en) | 2015-12-09 |
| CN105127880B CN105127880B (en) | 2017-12-05 |
Family
ID=54713624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510366852.7A Active CN105127880B (en) | 2015-06-26 | 2015-06-26 | A kind of Ultraprecise polished method of active control workpiece material cutting mechanisms transformation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105127880B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113618604A (en) * | 2021-10-11 | 2021-11-09 | 徐州市贾汪区万青聚富新能源有限公司 | Self-adaptation contradiction type contact photovoltaic power generation uses spare part burnishing device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01310859A (en) * | 1988-06-09 | 1989-12-14 | Toyoda Mach Works Ltd | Polishing machining device |
| US6238276B1 (en) * | 1998-11-27 | 2001-05-29 | Alps Electric Co., Ltd. | Sizing lapping apparatus |
| US20050260924A1 (en) * | 2004-05-21 | 2005-11-24 | Mosel Vitelic, Inc. | Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry |
| CN202225056U (en) * | 2011-06-30 | 2012-05-23 | 厦门赛菱精密五金制造有限公司 | Composite polishing machine |
| CN102672593A (en) * | 2012-06-04 | 2012-09-19 | 上海卡贝尼精密陶瓷有限公司 | Ultra-precise combined polishing method |
| JP2015112695A (en) * | 2013-12-13 | 2015-06-22 | 株式会社ディスコ | Polishing method |
-
2015
- 2015-06-26 CN CN201510366852.7A patent/CN105127880B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01310859A (en) * | 1988-06-09 | 1989-12-14 | Toyoda Mach Works Ltd | Polishing machining device |
| US6238276B1 (en) * | 1998-11-27 | 2001-05-29 | Alps Electric Co., Ltd. | Sizing lapping apparatus |
| US20050260924A1 (en) * | 2004-05-21 | 2005-11-24 | Mosel Vitelic, Inc. | Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry |
| CN202225056U (en) * | 2011-06-30 | 2012-05-23 | 厦门赛菱精密五金制造有限公司 | Composite polishing machine |
| CN102672593A (en) * | 2012-06-04 | 2012-09-19 | 上海卡贝尼精密陶瓷有限公司 | Ultra-precise combined polishing method |
| JP2015112695A (en) * | 2013-12-13 | 2015-06-22 | 株式会社ディスコ | Polishing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113618604A (en) * | 2021-10-11 | 2021-11-09 | 徐州市贾汪区万青聚富新能源有限公司 | Self-adaptation contradiction type contact photovoltaic power generation uses spare part burnishing device |
| CN113618604B (en) * | 2021-10-11 | 2022-02-08 | 徐州市贾汪区万青聚富新能源有限公司 | Self-adaptation contradiction type contact photovoltaic power generation uses spare part burnishing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105127880B (en) | 2017-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100579723C (en) | Laser glass mechanical chemical polishing method | |
| CN104290002B (en) | A kind of processing method of cylindrical mirror | |
| CN203636513U (en) | Ultra-precision machining system with function of ultrasonic vibration assisted grinding/polishing | |
| CN102211301B (en) | Large-plane ultra-precision automatic machining device and machining method therefore | |
| CN104589211B (en) | The flat surface grinding processing unit (plant) of a kind of ultrathin gasket part and use processing method thereof | |
| CN103042448A (en) | Vertical disc grinder with double grinding heads and machining method implemented by vertical disc grinder | |
| CN101829942A (en) | Machining center for polishing and grinding square rod | |
| CN104400607A (en) | Polishing method for precision mold | |
| CN204913569U (en) | Work piece polishing dish contact State adjustable burnishing device | |
| CN105127880A (en) | Ultraprecise polishing method capable of actively controlling workpiece material to remove mechanism conversion | |
| CN104289981B (en) | The gradually method of pressurization safety polishing quartz glass wafer | |
| CN205342756U (en) | Controllable liquid hydrodynamic float burnishing device in fluid border | |
| CN205438221U (en) | Novel numerical control wheel Truing machine | |
| CN102019472A (en) | Medium-speed wire cutting method based on high-speed wire cutting machine tool | |
| CN102756335B (en) | High-precision efficient stepped grinding wheel dresser | |
| CN209664996U (en) | A kind of automatic beveling machine with flexible adjustment module | |
| CN204843769U (en) | Cam grinding machine | |
| CN114227339B (en) | Ultra-precision turning precise tool setting method based on trial-cut circular groove | |
| CN203854110U (en) | Clamping and machining device for grooved porous products | |
| CN203621976U (en) | Auxiliary device for water pump blade numerical control machining | |
| CN102485420A (en) | Processing method capable of reducing surface roughness and surface damage of silicon wafer | |
| CN204277770U (en) | A kind of flat surface grinding processing unit (plant) of ultrathin gasket part | |
| CN201881287U (en) | Die arrangement device for ultra-precise hydrodynamic suspension cylinder polishing head | |
| CN104347357A (en) | Substrate machining method with polishing and follow-up cleaning being replaced by thinning | |
| CN205271623U (en) | Benefit adjusting volume grinding wheel unit of double -ended grinding machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191126 Address after: Room 1,020, Nanxun Science and Technology Pioneering Park, No. 666 Chaoyang Road, Nanxun District, Huzhou City, Zhejiang Province, 313000 Patentee after: Huzhou You Yan Intellectual Property Service Co.,Ltd. Address before: 313000 Room 1403, 14th Floor, Building B, Freeport, Headquarters 1188 District Fulu Road, Wuxing District, Huzhou City, Zhejiang Province Patentee before: Zhejiang creation Intellectual Property Service Co.,Ltd. Effective date of registration: 20191126 Address after: 313000 Room 1403, 14th Floor, Building B, Freeport, Headquarters 1188 District Fulu Road, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Zhejiang creation Intellectual Property Service Co.,Ltd. Address before: The city Zhaohui six districts Chao Wang Road Hangzhou city Zhejiang province Zhejiang University of Technology No. 18 310014 Patentee before: Zhejiang University of Technology |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200409 Address after: 211599 Liuhe Economic Development Zone, Jiangsu, Nanjing Patentee after: Nanjing Qisheng metal precision materials Co.,Ltd. Address before: Room 1,020, Nanxun Science and Technology Pioneering Park, No. 666 Chaoyang Road, Nanxun District, Huzhou City, Zhejiang Province, 313000 Patentee before: Huzhou You Yan Intellectual Property Service Co.,Ltd. |