CN204887163U - Image pel array and camera module - Google Patents
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- CN204887163U CN204887163U CN201520412714.3U CN201520412714U CN204887163U CN 204887163 U CN204887163 U CN 204887163U CN 201520412714 U CN201520412714 U CN 201520412714U CN 204887163 U CN204887163 U CN 204887163U
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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Abstract
The utility model relates to an image pel array and camera module. The utility model discloses a purpose be solve with prior art in exist one or more a plurality of problem of being correlated with. An image pel array. This image pel array includes: a plurality of photodiode, microlens array, wherein each lenticule arrives the point focusing on corresponding one among the photodiode, with the layer that the infrared light of patterning blocks the material, arrange in microlens array with between a plurality of photodiode, wherein the infrared light blocks that material transmission visible light is and block the infrared light. According to the utility model discloses an useful technological effect of embodiment is: can catch image visible and that infrared ray spectral range is interior simultaneously.
Description
This application claims the U.S. Patent application No.14/316 being filed on June 26th, 2014, the priority of 648, by reference it is completely combined in this.
Technical field
The application's relate generally to imaging device, and more specifically, relate to the imaging device with visible imaging capability and infrared imaging ability.
Background technology
Modern electronic equipment such as cell phone, camera and computer use digital image sensor usually.Imager (that is, imageing sensor) can be formed by the two-dimensional array of image sensing pixel.Each pixel can comprise optical sensor (such as photodiode), and described optical sensor receives incident photon (light) and photon is converted to the signal of telecommunication.Imageing sensor is designed to use associating image expert group's (JPEG) form or any picture format that other is applicable to provide image to electronic equipment sometimes.
Imaging device can be configured to catch the image in both infra-red spectrum and limit of visible spectrum.Infrared imaging can be used for some different application, such as three-dimensional (3D) imaging, automatic focus and other application.But, in the imageing sensor of routine, be difficult to the signal corresponding to infrared light to be opened with the Signal separator corresponding to visible ray.If careless, the infrared light received by the colored pixels in imageing sensor may reduce the quality of the image caught in the visible spectrum.
Sometimes infrared ray cut off filter is placed on before imageing sensor, to prevent infrared light from touching imageing sensor.In order to catch image in infra-red spectrum, for infrared imaging uses independent imaging sensor.But, use two independent imaging sensor costs high, and undesirable volume can be increased to electronic equipment.
Therefore, the imaging device of the improvement that can be provided for the image caught in infrared ray and limit of visible spectrum is wished.
Utility model content
An object of the present utility model solves the problem relevant to one or more problem existed in prior art.
According to an aspect of the present utility model, provide a kind of image pixel array.This image pixel array comprises: multiple photodiode; Microlens array, on corresponding one that wherein each lenticule focuses the light in described photodiode; With the layer of the infrared light barrier material of patterning, be placed between described microlens array and described multiple photodiode, wherein said infrared light barrier material visible light transmissive and stop infrared light.
According to an embodiment, described image pixel array comprises the visible imaging pixel for detecting the light in visible spectrum and the infrared imaging pixel for detecting the light in infrared spectrum.
According to an embodiment, the layer of the infrared light barrier material of described patterning comprises and corresponding at least one opening alignd in described infrared imaging pixel.
According to an embodiment, described image pixel array also comprises: the infrared ray pass filter component in described opening, wherein said infrared ray pass filter component block visible light, and transmitted infrared light to the corresponding corresponding light electric diode be associated in described infrared imaging pixel.
According to an embodiment, described infrared ray pass filter component comprises black polymer.
According to an embodiment, described image pixel array also comprises: array of color filter elements, be placed between described microlens array and described multiple photodiode, each color filter element in wherein said array of color filter elements is overlapping with the appropriate section of described infrared light barrier material.
According to an embodiment, being placed between described array of color filter elements and described multiple photodiode of the infrared light barrier material of described patterning.
According to an embodiment, being placed between described microlens array and described array of color filter elements of the infrared light barrier material of described patterning.
According to an embodiment, described infrared light barrier material comprises the light allowing the visible ray of all wavelengths to pass through can imaging copolymer.
According to another aspect of the present utility model, provide a kind of camera module.This camera module comprises: the imageing sensor with pel array, and described pel array has stop infrared light and the infrared light barrier material layer of visible light transmissive; Be arranged in the lens focused light on described imageing sensor on described imageing sensor; And the twin band pass filter be placed between described lens and described imageing sensor, the first wave long band of wherein said twin band pass filter TEM investigation in visible ray and the Second Wave long band corresponding to infrared light.
An Advantageous Effects according to embodiment of the present utility model is: can catch the image in visible and infra-red spectrum simultaneously.
Accompanying drawing explanation
Fig. 1 is the figure with the exemplary electronic equipment of camera module according to embodiment of the present utility model.
Fig. 2 shows according to embodiment of the present utility model, the curve of the spectral response of the twin band pass filter that can use in the camera module of Fig. 1 shown type.
Fig. 3 is according to embodiment of the present utility model, has the cross sectional side view of a part for the exemplary imageing sensor of the patterning infrared ray cut off filter formed under color filter array.
Fig. 4 is according to embodiment of the present utility model, has the cross sectional side view of a part for the exemplary imageing sensor of the patterning infrared ray cut off filter formed on color filter array.
Fig. 5 shows according to embodiment of the present utility model, the curve of the spectral response of the infrared ray pass filter component that can use in infrared imaging pixel.
Fig. 6 shows according to embodiment of the present utility model, the curve of the spectral response of the infrared ray cut off filter element that can use in visible imaging pixel.
Fig. 7 is the vertical view of the exemplary infrared light barrier material layer according to embodiment of the present utility model, and this infrared light barrier material layer is patterned as and comprises multiple opening, for allowing the infrared imaging pixel in infrared light arrival pel array.
Fig. 8 is the vertical view of the exemplary infrared light barrier material layer according to embodiment of the present utility model, and this infrared light barrier material layer is patterned as and comprises opening, arrives for allowing infrared light the infrared imaging pixel be arranged in continuously in a line.
Fig. 9 is according to embodiment of the present utility model, adopts the block diagram of the system of the embodiment of Fig. 1-8.
Embodiment
Electronic equipment such as digital camera, computer, cell phone and other electronic equipment comprise collects the image light that enters to catch the imageing sensor of image.Imageing sensor can comprise the array of imaging pixel.Pixel in imageing sensor can comprise light-sensitive element, such as the image light entered is converted to the photodiode of picture signal.Imageing sensor can have the pixel (such as, hundreds of or thousands of or more) of arbitrary number.Typical imageing sensor is passable, such as, has hundreds of thousands or millions of pixel (such as, million pixels).Imageing sensor can comprise control circuit, such as operating the circuit of imaging pixel and the reading circuit for the picture signal that reads the electric charge produced corresponding to light-sensitive element.
Fig. 1 is the figure of the exemplary electronic equipment using image capture sensor image.The electronic equipment 10 of Fig. 1 can be mancarried electronic aid, such as other imaging device of camera, cell phone, video camera or seizure DID.Camera module 12 can be used to be converted to DID by entering light.Camera module 12 can comprise the imageing sensor 16 of one or more lens 14 and one or more correspondence.Imageing sensor 16 can be system on image sensor chip (SOC), it has with additional process and control circuit, the analog control circuit on the common image sensor IC tube core of such as image pixel array and digital control circuit.
In image capture operation process, the light from scene can be focused on (such as, the array 24 of image pixel 22) on image pixel array by lens 14.Imageing sensor 16 provides corresponding DID to analog circuit 30.Analog circuit 30 can provide treated view data to digital circuit 32, to process further.Circuit 30 and/or 32 can also be used for the operation of control chart image-position sensor 16.Imageing sensor 16 can be back side illumination image sensor, if or wish, can be frontlighting imageing sensor.If wished, camera module 12 can be provided with the array of lens 14 and the array of corresponding imageing sensor 16.
Equipment 10 can comprise additional control circuit, such as Storage and Processing circuit 18.Circuit 18 can comprise one or more integrated circuit (such as, image processing circuit, microprocessor, memory device, such as random access storage device and nonvolatile storage etc.), and the assembly (such as, forming the integrated circuit comprising imageing sensor 16 or the circuit of a part for integrated circuit in the module 12 that is associated with imageing sensor 16) being separated and/or being formed a part for camera module 12 with camera module 12 can be used to realize.Treatment circuit 18 can be used to process further and/or store the view data caught by camera module 12.If wished, can use be coupled to treatment circuit 18 wired/or wireless communications path treated view data is provided to external equipment (such as, computer or miscellaneous equipment).Treatment circuit 18 can be used to the operation of control chart image-position sensor 16.
Imageing sensor 16 can comprise one or more arrays 24 of image pixel 22.CMOS (Complementary Metal Oxide Semiconductor) (CMOS) technology or charge coupled device (CCD) technology or any lighting apparatus technology that other is applicable to can be used, in Semiconductor substrate, form image pixel 22.
Filter (such as twin band pass filter) 20 can be placed between lens 14 and imageing sensor 16.Such as, filter 20 can be that the band of the laminated coating comprised in glass substrate leads to coating filter.Use constructive interference and destructive interference process, the second narrow wave band that filter 20 can be configured to the wavelength allowing the first band of the wavelength corresponding to visible ray and correspond near infrared light passes through.
Filter 20 can allow imageing sensor 16 to catch image in limit of visible spectrum and infra-red spectrum.Such as, equipment 10 can comprise reflector, such as infrared transmitter 26.Infrared transmitter 26 can be for the infrared laser of near infrared light scene.The light produced by reflector 26 can be the structured light with the wavelength dropped in the second narrow passband of filter 20.The infrared light reflected from scene to imageing sensor 16 through filter 20, and arrives by the infrared imaging pixel detection in pel array 24.But this is only exemplary.If wished, it is not the infrared light produced by reflector 26 that the infrared imaging pixel in pel array 24 can detect.
The curve showing the spectral response of twin band pass filter 20 is shown in Figure 2.As shown in Figure 2, twin band pass filter 20 can have the first passband (such as passband 34) in limit of visible spectrum and the second narrow passband (such as passband 36) in infra-red spectrum.First passband 34 can correspond to scope from about 390 to the wavelength of about 700 nanometers, and the second passband 36 can correspond to scope from about 830 to about 870 nanometers, about 830 to the wavelength of about 930 nanometers, or can correspond to the wavelength of other the applicable scope in infra-red spectrum (exemplarily).
In the Conventional image sensor comprising visible and infrared imaging pixel, infrared imaging pixel is provided with and allows infrared light to pass through and the infrared filter of block visible light.Visible imaging pixel is provided with colour filter (such as red, green and blue colour filter) usually, and they are optimised for and allow the light of particular color to pass through.But colour filter also shows certain transmissivity usually in infra-red spectrum, and be difficult to the infrared part of picture element signal and the visible part of picture element signal to separate.This has been come, to remove the infrared part of the picture element signal from visible imaging pixel by the picture element signal relied on from infrared imaging pixel sometimes.But the method not accurately always, and may reduce the quality of the image in visible spectrum.
By providing the structure preventing infrared light from arriving visible imaging pixel, the process of the difficulty of the infrared part of the picture element signal removed exactly from visible imaging pixel can be avoided completely.Sometimes infrared ray cut (cut-off) filter is placed on before imageing sensor, touches imageing sensor to prevent infrared light.But this needs for infrared imaging uses independent imageing sensor, this cost high and for little form factor equipment be undesirable.
In order to provide visible and infrared imaging with single image transducer, and not damaging the quality of the image in limit of visible spectrum, the visible imaging pixel in pel array 24 can comprise and allows the colour filter that passes through of visible ray and allow visible ray by stopping both infrared ray cut off filter of infrared light simultaneously.Fig. 3 shows the cross sectional side view of imageing sensor 16, how can comprise the infrared ray cut off filter of patterning exemplified with pel array 24.As shown in Figure 3, pel array 24 can comprise visible imaging pixel 22V and infrared imaging pixel 22N.Each imaging pixel can comprise light-sensitive element (such as photodiode 140) and lenticule (such as lenticule 28).Each lenticule can be configured to the light from scene to guide to the photodiode 140 be associated.
Photodiode 140 can be formed in the surperficial 126S of substrate layer 126 (such as, P-type silicon substrate).Other dot structure (such as, floating diffusion region, pixel transistor etc.) can also be formed in the surperficial 126S of substrate 126.Can be formed dielectric laminated on the surperficial 126S of substrate 126, such as dielectric laminated 124.Dielectric laminated 124 can be formed by dielectric substance (such as silicon dioxide or other dielectric substance).Interconnection routing infrastructure (such as electrically conductive signal routed path and conductive through hole) can be formed, to contact each pixel transistor terminal in substrate 126 in dielectric laminated 124.Therefore, dielectric laminated 124 can be called as interconnect stack sometimes.
Filter array (such as filter array 38) can be placed between lenticule 28 and substrate 126.The color filter element 38C that the light that filter array 38 can comprise the one or more colors allowed in visible spectrum passes through, and allow the light in infrared spectrum to pass through and the infrared ray pass filter component 38P of light in block visible light spectrum.Infrared filter element 38P can by black-colored photosensitive polymer or other material (such as, the infrared ray bandpass filter material) formation be applicable to showing the light in transmission infra-red spectrum to the strong absorption of the light in limit of visible spectrum.Color filter element 38C can comprise red color filter element (such as, ruddiness is allowed to pass through and reflect and/or absorb the color filter materials of the light of other color), blue color filter element (such as, blue light is allowed to pass through and reflect and/or absorb the color filter materials of the light of other colors), green color filter element (such as, green glow is allowed to pass through and reflect and/or absorb the color filter materials of the light of other color), yellow color filter element (such as, allow the yellow color filter materials that ruddiness and green glow pass through), transparent color filters element (such as, allow ruddiness, the transparent material that blue light and green glow pass through) and/or other color is (such as, blue or green, pinkish red etc.) color filter element.
Each filter element in filter array 38 can be overlapping with corresponding photodiode 140.Such as, color filter element 38C can be overlapping with the photodiode 140 of visible imaging pixel 22V, and infrared ray pass filter component 38P can be overlapping with the photodiode 140 of infrared imaging pixel 22N.
In order to the photodiode 140 preventing the infrared light through color filter element 38C from arriving visible imaging pixel 22V, pel array 24 can comprise the layer of additional filter element 30.Layer 30 can comprise infrared ray cut off filter element 30C and infrared ray by element 30P.Can form infrared ray cut off filter element 30C (sometimes referred to as infrared ray barrier material 30C) in visible imaging pixel 22V, and it is configured to the transmission of stop infrared light and allows the wavelength of all visible rays to pass through.Can form the infrared ray of layer 30 by part 30P in infrared imaging pixel 22N, and if wish, it can be formed by the material that element 38P is identical by with the infrared ray of filter array 38.
Photoetching technique can be used to form the filter layer 38 and 30 of Fig. 3.Such as, can by depositing infrared ray cut off filter material (such as on substrate 126, light can imaging copolymer) cover layer, then this layer of patterned photolithographicallas, to form the pattern of desired infrared ray cut off filter element 30C (such as on substrate 126, to form the opening in the infrared ray cut off filter material in the region corresponding to infrared imaging pixel 22N, and the infrared ray cut off filter element 30C formed in the region corresponding to visible imaging pixel 22V), form layer 30.Can be formed by similar mode layer 38 (such as, by deposition and the layer of pattern color filters material to form color filter element 38C, and deposition and patterning infrared ray passes through element 38P by material to form infrared ray).If wished, infrared ray can be formed by element 30P and infrared ray in identical treatment step by element 38P.
The example of Fig. 3 is only exemplary, and wherein infrared ray cut element 30C is placed between color filter element 38C and photodiode 140.If wished, color filter element 38C can be formed under infrared ray cut element 30C.Such as, as shown in Figure 4, filter layer 38 can be placed between filter layer 30 and photodiode 140.Layer 38 can be formed by depositing also pattern color filters element 38C and infrared ray on substrate 126 by element 38P, and layer 30 can be formed by depositing also patterning infrared ray cut off filter element 30C and infrared ray on layer 38 by element 30P.If wished, infrared ray can be formed by element 30P and infrared ray in identical treatment step by element 38P.
If wished, infrared light barrier material 30C can integrate with color filter materials 38C, instead of by as under color filter materials 38C or on individual course be deposited.With such layout, each color filter element 38C will stop the transmission of infrared light and allow the wavelength band corresponding to particular color to pass through.
The example of Fig. 3 and 4 is only exemplary, and wherein imageing sensor 16 is back side illumination image sensors.If wished, imageing sensor 16 can be frontlighting imageing sensor (such as, wherein interconnect stack 124 is placed between substrate 126 and filter layer 30 and 38).
Show infrared ray shown in Figure 5 by the curve of the spectral response of element 30P and 38P.As shown in Figure 5, infrared ray stops λ by element 30P and 38P
1under the light (such as, visible ray) of wavelength, and allow λ
1on the light (such as, infrared light) of wavelength pass through.Such as, wavelength X
1can between 750nm and 850nm (as an example).In infrared imaging pixel 22N, use infrared ray to guarantee that visible ray is not transmitted to the photodiode 140 of infrared imaging pixel 22N by element 30P and 38P.
The curve showing the spectral response of infrared ray cut element 30C is shown in Figure 6.As shown in Figure 6, infrared ray cut element 30C stops λ
2on the light (such as, infrared light) of wavelength, and allow λ
2under the light (such as, visible ray) of wavelength pass through.Such as, wavelength X
2can between 800nm and 900nm (as an example).In visible imaging pixel 22V, using infrared light barrier material 30C to guarantee, infrared light is not transmitted to the photodiode 140 of visible imaging pixel 22V.In the configuration that infrared ray cut element 30C and color filter element 38C integrates, visible spectrum (λ
2under) in passband be the narrower passband of the light corresponding to particular color (such as, red, green, or blue).
By using the patterned layer of infrared light barrier material 30C (relative with the covering infrared ray cut off filter hiding whole imageing sensor) in imageing sensor SOC16, in some part of pel array 24, optionally can stop infrared light, and in the other parts of pel array 24, optionally allow infrared light to pass through.
Fig. 7 shows the exemplary pattern of the infrared light barrier material 30C for Fig. 3 and 4.As shown in Figure 7, layer 30 can comprise the cover layer of infrared light barrier material 30C, and described cover layer has for holding the opening of infrared ray by material 30P.In this illustration, layer 30 is evenly distributed in everywhere for infrared ray by the opening of material 30P.Can use this kind of pattern in conjunction with the filter array 38C with " accurate Bayer (quasi-Bayer) " pattern, wherein each 2x2 block of filter element comprises green color filter element, red color filter element, blue color filter element and is positioned at the near-infrared filter element at typical Bayer array medium green color filter element position place.Infrared ray barrier material 30C in figure can be overlapping with red color filter element, green color filter element and blue color filter element, and infrared ray can be overlapping with near-infrared filter element by element 30P.But this is only exemplary.If wished, infrared ray pixel 22N (with the corresponding opening in infrared light barrier material 30C) can arrange with any pattern in pel array 24.
Such as, infrared ray can cross over more than one pixel by part 30P.Such as, as shown in Figure 8, layer 30 comprises the cover layer of the infrared ray barrier material 30C of the continuous opening with multiple pixels of crossing in a line.Such layout can be used for comprising the pel array of the multiple infrared ray pixels be arranged in continuously in a line (such as, crossing over level or the vertical row of a part for whole pel array or pel array).Usually, near-infrared pixel can by with any applicable patterned arrangement in pel array 24.The example of Fig. 7 and 8 is only exemplary.
Fig. 9 show in simplified form the exemplary processor system 300 comprising imaging device 200, such as digital camera.Imaging device 200 can comprise the pel array 24 of Fig. 1 shown type be formed on imageing sensor SOC.Pel array 24 can comprise visible and infrared imaging pixel, and the infrared light barrier material of patterning as above.Processor system 300 is the examples with the system of digital circuit that can comprise imaging device 200.In the case of unrestricted, this system can comprise computer system, still camera or camera chain, scanner, machine vision, automobile navigation, visual telephone, surveillance, autofocus system, star tracker system, movement detection systems, image stabilization system and adopt other system of imaging device.
Processor system 300, it can be digital still camera system or camera chain, lens (such as lens 396) can be comprised, for when shutter release button 397 is pressed, focus an image to pel array (such as pel array 201).Processor system 300 can comprise CPU, such as CPU (CPU) 395.CPU395 can be microprocessor, and it controls camera-enabled and one or more image stream function, and above communicates with one or more I/O (I/O) equipment 391 in bus (such as bus 393).Imaging device 200 also can communicate with CPU395 in bus 393.System 300 can comprise random access storage device (RAM) 392 and removable memory 394.Removable memory 394 can be included in the flash memory that bus 393 communicates with CPU395.Imaging device 200 can combine, has or not have memory storage device, on a single integrated circuit or on different chips with CPU395.Although bus 393 is exemplified as monobus, it can be one or more bus or bridge or other communication path for interconnection system assembly.
Describe various embodiment, exemplified with comprising as seen and the imageing sensor of the pel array of infrared imaging pixel.The microlens array that this pel array can comprise photodiode array, the filter element array formed on photodiode and be formed on filter element array.Filter element can comprise the layer of the patterning of the infrared light barrier material be placed between microlens array and photodiode array.This infrared ray barrier material can be configured to stop infrared light and allow the visible ray of all wavelengths to pass through.The infrared ray cut off filter element that visible imaging pixel can comprise color filter element (such as, red filter element, green filter element, blue filter element etc.) and be formed by infrared light barrier material.Can the layer of this infrared light barrier material of patterning, to comprise corresponding to the opening in the region of the infrared imaging pixel in array.Can with permission infrared light by and described opening filled by the infrared ray bandpass filter material of block visible light transmission.The imageing sensor SOC of the type can catch the image in visible and infra-red spectrum simultaneously, and can be used to imaging system, such as electronic equipment.
Twin band pass filter can be placed between lens and imageing sensor.Described twin band pass filter can be that the band of the laminated coating comprised on glass plate leads to coating filter.By constructive interference and destructive interference process, twin band pass filter can the near infrared light of visible light transmissive and narrow wave band, stops the light of other wavelength simultaneously.
Near-infrared pixel can be dispersed in pel array everywhere by any applicable pattern.In one embodiment, can by accurate Bayer pattern formed be layered in the infrared light barrier material of patterning layer on or under color filter array.With such layout, color filter array is made up of the 2x2 block of filter element, and wherein each piece comprises green color filter element, red color filter element, blue color filter element and be positioned at the near-infrared filter element at typical Bayer array medium green color filter element position place.Infrared light barrier material can be overlapping with color filter element, and the opening in infrared light barrier material can be overlapping with near-infrared filter element.But this is only exemplary.Can the density of infrared ray pixel according to demand and/or in the function adjustment pel array of desired imageing sensor and layout.
With such imageing sensor, the photodiode of visible imaging pixel only can receive visible ray, and the photodiode of infrared imaging pixel only can receive infrared light.Therefore, imageing sensor can catch the image in visible and infra-red spectrum simultaneously.
According to an embodiment, provide a kind of image pixel array, comprise multiple photodiode, microlens array (each lenticule focuses the light on corresponding of photodiode) and be placed in the layer of infrared light barrier material of the patterning between described microlens array and described multiple photodiode, described infrared light barrier material visible light transmissive, and stop infrared light.
According to another embodiment, described image pixel array comprises the visible imaging pixel for detecting the light in visible spectrum, and for detecting the infrared imaging pixel of the light in infrared spectrum.
According to another embodiment, the layer of the infrared light barrier material of described patterning comprises and corresponding at least one opening alignd in described infrared imaging pixel.
According to another embodiment, described image pixel array comprises the infrared ray pass filter component in described opening, described infrared ray pass filter component block visible light, and transmitted infrared light to the corresponding corresponding light electric diode be associated in described infrared imaging pixel.
According to another embodiment, described infrared ray pass filter component comprises black polymer.
According to another embodiment, described image pixel array comprises the array of color filter elements be placed between described microlens array and described multiple photodiode, and each color filter element in described array of color filter elements is overlapping with the appropriate section of described infrared light barrier material.
According to another embodiment, being placed between described array of color filter elements and described multiple photodiode of the infrared light barrier material of described patterning.
According to another embodiment, being placed between described microlens array and described array of color filter elements of the infrared light barrier material of described patterning.
According to another embodiment, described infrared light barrier material comprises the light allowing the visible ray of all wavelengths to pass through can imaging copolymer.
According to an embodiment, provide a kind of camera module, comprise the imageing sensor (described pel array has stop infrared light and the infrared light barrier material layer of visible light transmissive) with pel array, the twin band pass filter being arranged in the lens (described imageing sensor focuses light on described imageing sensor) on imageing sensor and being placed between described lens and described imageing sensor, the first wave long band of described twin band pass filter TEM investigation in visible ray and the Second Wave long band corresponding to infrared light.
According to another embodiment, described infrared light barrier material comprises light can imaging copolymer.
According to another embodiment, described camera module comprises the multiple color filter element in described pel array, and each in described color filter element is overlapping with the appropriate section of described infrared light barrier material.
According to another embodiment, the layer of described infrared light barrier material comprises multiple opening, and described opening allows infrared light to pass through and the filling of the infrared ray pass filter component of block visible light.
According to another embodiment, described pel array comprises image sensor substrate, wherein forms multiple photodiode, and being placed between described multiple color filter element and described multiple photodiode of described infrared light barrier material.
According to another embodiment, described pel array comprises image sensor substrate, wherein forms multiple photodiode, and between described multiple color filter element layer of being placed in described infrared light barrier material and described multiple photodiode.
According to an embodiment, provide a kind of system, comprise CPU, memory, input/output circuitry and there is the imaging device of pel array, described pel array comprises multiple photodiode, microlens array (each lenticule focuses the light on corresponding of photodiode) and is placed in the layer of infrared light barrier material of the patterning between described microlens array and described multiple photodiode, described infrared light barrier material visible light transmissive and stop infrared light.
According to another embodiment, described image pixel array comprises the visible imaging pixel for detecting the light in visible spectrum and the infrared imaging pixel for detecting the light in infrared spectrum.
According to another embodiment, the layer of the infrared light barrier material of described patterning comprises and corresponding at least one opening alignd in described infrared imaging pixel.
According to another embodiment, described system comprises the infrared ray pass filter component in described opening, described infrared ray pass filter component block visible light and transmitted infrared light to the corresponding corresponding light electric diode be associated in described infrared imaging pixel.
According to another embodiment, described system comprises the array of color filter elements be placed between described microlens array and described multiple photodiode, and each color filter element in described array of color filter elements is overlapping with the appropriate section of described infrared light barrier material.
Above-mentioned is only illustrate principle of the present utility model, and described principle can the practice of other embodiments.
Claims (9)
1. an image pixel array, is characterized in that comprising:
Multiple photodiode;
Microlens array, on corresponding one that wherein each lenticule focuses the light in described photodiode; With
The layer of the infrared light barrier material of patterning, is placed between described microlens array and described multiple photodiode, wherein said infrared light barrier material visible light transmissive and stop infrared light.
2. image pixel array as claimed in claim 1, is characterized in that described image pixel array comprises the visible imaging pixel for detecting the light in visible spectrum and the infrared imaging pixel for detecting the light in infrared spectrum.
3. image pixel array as claimed in claim 2, is characterized in that the layer of the infrared light barrier material of described patterning comprises and corresponding at least one opening alignd in described infrared imaging pixel.
4. image pixel array as claimed in claim 3, characterized by further comprising: the infrared ray pass filter component in described opening, wherein said infrared ray pass filter component block visible light, and transmitted infrared light to the corresponding corresponding light electric diode be associated in described infrared imaging pixel.
5. image pixel array as claimed in claim 4, is characterized in that described infrared ray pass filter component comprises black polymer.
6. image pixel array as claimed in claim 2, characterized by further comprising:
Array of color filter elements, be placed between described microlens array and described multiple photodiode, each color filter element in wherein said array of color filter elements is overlapping with the appropriate section of described infrared light barrier material.
7. image pixel array as claimed in claim 6, is characterized in that being placed between described array of color filter elements and described multiple photodiode of the infrared light barrier material of described patterning.
8. image pixel array as claimed in claim 6, is characterized in that being placed between described microlens array and described array of color filter elements of the infrared light barrier material of described patterning.
9. a camera module, is characterized in that comprising:
Have the imageing sensor of pel array, described pel array has stop infrared light and the infrared light barrier material layer of visible light transmissive;
Be arranged in the lens focused light on described imageing sensor on described imageing sensor; With
Be placed in the twin band pass filter between described lens and described imageing sensor, the first wave long band of wherein said twin band pass filter TEM investigation in visible ray and the Second Wave long band corresponding to infrared light.
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| US14/316,648 | 2014-06-26 | ||
| US14/316,648 US9699393B2 (en) | 2014-06-26 | 2014-06-26 | Imaging systems for infrared and visible imaging with patterned infrared cutoff filters |
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