CN204857775U - Cspled - Google Patents
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- CN204857775U CN204857775U CN201520557612.0U CN201520557612U CN204857775U CN 204857775 U CN204857775 U CN 204857775U CN 201520557612 U CN201520557612 U CN 201520557612U CN 204857775 U CN204857775 U CN 204857775U
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Abstract
The utility model provides a CSPLED, includes the LED chip, the LED chip includes semiconductor wafer and the electrode of locating the semiconductor wafer bottom, top surface and four sides of semiconductor wafer are the light emitting area, it shelters from all to be equipped with the glue film that is in the light on the light emitting area of four sides of semiconductor wafer, it covers to be equipped with the fluorescence glue film on the light emitting area of semiconductor wafer top surface, the top surface of fluorescence glue film forms the step with the top surface of the glue film that is in the light. The utility model discloses an increasing the glue film that is in the light in the side of flip -chip LED chip, making four sides of LED chip all can not outwards give out light, only the top surface of remaining LED chip can the light -emitting, and is in the light that whole or the part is exposed for the top of glue film, can prevent that the gold -tinted from appearing in LED chip periphery. (U /)
Description
Technical field
The utility model relates to field of LED illumination, especially a kind of wafer-level package white light LEDs.
Background technology
Based on the novel wafer-level package LED(CSPLED of flip chip; ChipScalePackageLED), be provided with electrode in die bottom surface, directly at upper surface and the side package on package colloid of chip, the electrode of bottom surface exposed, because this encapsulating structure there is no support or substrate, can packaging cost be reduced.Existing wafer-level package LED normally takes five luminescences, and namely the end face of LED and four sides all can be luminous, and the packaging technology of this kind of LED is relatively simple.Along with the raising that people require the angle, consistency etc. of product bright dipping, current wafer-level package LED structure can not meet people's needs, and people thirst for the appearance with the wafer-level package LED of one side luminescence.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of wafer-level package white light LEDs, has the feature of one side luminescence, makes up the deficiencies in the prior art.
For solving the problems of the technologies described above, the technical solution of the utility model is: a kind of CSPLED, comprise LED chip, described LED chip comprises semiconductor wafer and is located at the electrode bottom semiconductor wafer, and the end face of described semiconductor wafer and four sides are light-emitting area; The light-emitting area of described semiconductor wafer four sides is equipped with the glue-line that is in the light block, the light-emitting area of described semiconductor wafer end face is provided with fluorescent adhesive layer and covers; The end face of described fluorescent adhesive layer forms step with the end face of the glue-line that is in the light.The utility model is by increasing in the side of flip LED chips the glue-line that is in the light, four sides making LED chip all can not be outwards luminous, only the end face of remaining LED chip can bright dipping, the LED chip side glue that is in the light blocks, and the blue light that the blue light that LED chip sends in LED chip side sends relative to LED chip center is less, if be in the light, the end face of glue is coated with fluorescent glue, the blue light of LED chip side can send gold-tinted after exciting through the fluorescent glue at edge, thus affect the light-out effect of LED, the present invention has excised the fluorescent glue of LED chip end face periphery, make the blue light of LED chip side can not fluorescence excitation glue from the side, LED light-out effect is better, as improvement, be arranged with the leakproof photosphere that one deck is arranged along fluorescent adhesive layer edge outside described fluorescent adhesive layer, described leakproof photosphere is positioned at the top of the glue-line that is in the light and is blocked the inner side of the glue-line that is in the light.Leakproof photosphere can prevent the blue light of LED chip side from penetrating from the faying face of be in the light glue-line and chip sides and affecting the overall light efficiency of LED chip.
As improvement, described leakproof photosphere and fluorescent adhesive layer are formed in one structure.The part fluorescent adhesive layer covering semiconductor wafer end face is for by blue-light excited formation white light; Another outer peripheral part is mainly used in preventing LED chip side light leak.
As improvement, described in the be in the light width of glue-line be L1, the width of described leakproof photosphere is L, L=(1/5 ~ 1/2) L1.
As improvement, described fluorescent adhesive layer passes through mould model.
As improvement, described fluorescent adhesive layer is fluorescent glue paster.
As improvement, described in the be in the light lower end of glue-line concordant with the bottom of semiconductor wafer.LED chip, when carrying out die bond, leaves certain gap between the lower end of the glue-line that is in the light and substrate, prevents from lacking when being in the light glue-line expanded by heating the space of expansion and damages device.
As improvement, described fluorescent adhesive layer is provided with substratum transparent.
The beneficial effect that the utility model is compared with prior art brought is:
The utility model is by increasing in the side of flip LED chips the glue that is in the light, four sides making LED chip all can not be luminous, only the end face of remaining LED chip can bright dipping, this LED chip side glue that is in the light blocks, and the blue light that the blue light that LED chip sends in LED chip side sends relative to LED chip center is less, if be in the light, the end face of glue is coated with fluorescent glue, the blue light of LED chip side can send yellow circle after exciting through the fluorescent glue at edge, thus affect the light-out effect of LED, the present invention has excised the fluorescent glue of LED chip end face periphery, the blue light of LED chip side can not be excited from the side, LED light-out effect is better, the lower end of the described glue-line that is in the light is concordant with the bottom of semiconductor wafer, and LED chip, when carrying out die bond, leaves certain gap between the lower end of the glue-line that is in the light and substrate, prevents from lacking when being in the light glue-line expanded by heating the space of expansion and damages device.
Accompanying drawing explanation
Fig. 1 is the cutaway view of LED chip.
Fig. 2 is the vertical view of LED chip.
Embodiment
Below in conjunction with Figure of description, the utility model is described in further detail.
Embodiment 1
As shown in Figure 1, 2, a kind of wafer-level package white light LEDs, comprises LED chip, the electrode 2 that described LED chip comprises semiconductor wafer 1 and is located at bottom semiconductor wafer 1.Semiconductor wafer 1 is square, and the end face of semiconductor wafer 1 and four sides are light-emitting area.The light-emitting area of described semiconductor wafer 1 four sides is equipped with the glue-line 5 that is in the light block, this glue-line 5 that is in the light is for blocking the side bright dipping of LED chip; The light-emitting area of described semiconductor wafer 1 end face is provided with fluorescent adhesive layer 3 and covers, and this fluorescent adhesive layer 3 is for by blue-light excited formation white light, and the end face of fluorescent adhesive layer forms step with the end face of the glue-line that is in the light.Particularly, the leakproof photosphere 4 that one deck is arranged along fluorescent adhesive layer 3 edge is arranged with outside described fluorescent adhesive layer 3, described leakproof photosphere 4 is positioned at the top of the glue-line 5 that is in the light and is blocked the inner side of the glue-line 5 that is in the light, the width of the described glue-line that is in the light is L1, the width of described leakproof photosphere is L, L=(1/5 ~ 1/2) L1; Described leakproof photosphere 4 and fluorescent adhesive layer 3 are formed in one structure, and be a part for fluorescent adhesive layer 3, fluorescent adhesive layer 3 edge is outwardly to be mainly used in preventing LED chip side light leak with the part of LED chip end face.Described fluorescent adhesive layer 3 is provided with substratum transparent.The lower end of the described glue-line 5 that is in the light is concordant with the bottom of semiconductor wafer 1, and LED chip, when carrying out die bond, leaves certain gap between the lower end of the glue-line 5 that is in the light and substrate, prevents from lacking when being in the light glue-line 5 expanded by heating the space of expansion and damages device.
The fluorescent adhesive layer 3 of the present embodiment is by mould model, and first its moulding process is cover in the side of LED chip the glue-line 5 that is in the light; Then covering one deck fluorescent adhesive layer 3 at the end face of LED chip, in order to make the moulding process of fluorescent adhesive layer 3 simpler, after fluorescent adhesive layer 3 is shaping, the glue-line 5 that is in the light of LED chip and periphery being covered completely; Finally the edge of fluorescent adhesive layer 3 is excised.
The utility model is by increasing in the side of flip LED chips the glue-line 5 that is in the light, four sides making LED chip all can not be outwards luminous, only the end face of remaining LED chip can bright dipping, this LED chip side glue that is in the light blocks, and the blue light that the blue light that LED chip sends in LED chip side sends relative to LED chip center is less, if be in the light, the end face of glue is coated with fluorescent glue, the blue light of LED chip side can send yellow circle after exciting through the fluorescent glue at edge, thus affect the light-out effect of LED, the present invention has excised the fluorescent glue of LED chip end face periphery, the blue light of LED chip side can not be excited from the side, LED light-out effect is better, in addition, the leakproof photosphere 4 of fluorescent adhesive layer 3 periphery can prevent the blue light of LED chip side from penetrating from the faying face of glue-line 5 with chip sides that be in the light and affecting the overall light efficiency of LED chip.
Embodiment 2
As shown in Figure 1, 2, a kind of wafer-level package white light LEDs, comprises LED chip, the electrode 2 that described LED chip comprises semiconductor wafer 1 and is located at bottom semiconductor wafer 1.Semiconductor wafer 1 is square, and the end face of semiconductor wafer 1 and four sides are light-emitting area.The light-emitting area of described semiconductor wafer 1 four sides is equipped with the glue-line 5 that is in the light block, this glue-line 5 that is in the light is for blocking the side bright dipping of LED chip; The light-emitting area of described semiconductor wafer 1 end face is provided with fluorescent adhesive layer 3 and covers, and this fluorescent adhesive layer 3 is for by blue-light excited formation white light, and the end face of fluorescent adhesive layer forms step with the end face of the glue-line that is in the light.Particularly, the leakproof photosphere 4 that one deck is arranged along fluorescent adhesive layer 3 edge is arranged with outside described fluorescent adhesive layer 3, described leakproof photosphere 4 is positioned at the top of the glue-line 5 that is in the light and is blocked the inner side of the glue-line 5 that is in the light, the width of the described glue-line that is in the light is L1, the width of described leakproof photosphere is L, L=(1/5 ~ 1/2) L1; Described leakproof photosphere 4 is the structure that is formed in one with fluorescent adhesive layer 3, and be a part for fluorescent adhesive layer 3, fluorescent adhesive layer 3 edge is outwardly to be mainly used in preventing LED chip side light leak with the part of LED chip end face.Described fluorescent adhesive layer 3 is provided with substratum transparent.The lower end of the described glue-line 5 that is in the light is concordant with the bottom of semiconductor wafer 1, and LED chip, when carrying out die bond, leaves certain gap between the lower end of the glue-line 5 that is in the light and substrate, prevents from lacking when being in the light glue-line 5 expanded by heating the space of expansion and damages device.
The fluorescent adhesive layer 3 of the present embodiment is fluorescence paster, and first its moulding process is cover in the side of LED chip the glue-line 5 that is in the light; Then paste fluorescence paster at the end face of LED chip, the size dimension of fluorescence paster can cut in advance, can complete after fluorescence paster is attached to LED end face.
The utility model is by increasing in the side of flip LED chips the glue-line 5 that is in the light, four sides making LED chip all can not be outwards luminous, only the end face of remaining LED chip can bright dipping, this LED chip side glue that is in the light blocks, and the blue light that the blue light that LED chip sends in LED chip side sends relative to LED chip center is less, if be in the light, the end face of glue is coated with fluorescent glue, the blue light of LED chip side can send yellow circle after exciting through the fluorescent glue at edge, thus affect the light-out effect of LED, the present invention has excised the fluorescent glue of LED chip end face periphery, the blue light of LED chip side can not be excited from the side, LED light-out effect is better, in addition, the leakproof photosphere 4 of fluorescent adhesive layer 3 periphery can prevent the blue light of LED chip side from penetrating from the faying face of glue-line 5 with chip sides that be in the light and affecting the overall light efficiency of LED chip.
Claims (9)
1. a CSPLED, comprises LED chip, and described LED chip comprises semiconductor wafer and is located at the electrode bottom semiconductor wafer, and the end face of described semiconductor wafer and four sides are light-emitting area; It is characterized in that: the light-emitting area of described semiconductor wafer four sides is equipped with the glue-line that is in the light and blocks, the light-emitting area of described semiconductor wafer end face is provided with fluorescent adhesive layer and covers; The end face of described fluorescent adhesive layer forms step with the end face of the glue-line that is in the light.
2. a kind of CSPLED according to claim 1, is characterized in that: be arranged with the leakproof photosphere that one deck is arranged along fluorescent adhesive layer edge outside described fluorescent adhesive layer, and described leakproof photosphere is positioned at the top of the glue-line that is in the light and is blocked the inner side of the glue-line that is in the light.
3. a kind of CSPLED according to claim 2, is characterized in that: described leakproof photosphere is the first fluorescent adhesive layer.
4. a kind of CSPLED according to claim 3, is characterized in that: described leakproof photosphere and fluorescent adhesive layer are formed in one structure.
5. a kind of CSPLED according to claim 2, is characterized in that: described in the be in the light width of glue-line be L1, the width of described leakproof photosphere is L, L=(1/5 ~ 1/2) L1.
6. a kind of CSPLED according to claim 1, is characterized in that: described fluorescent adhesive layer passes through mould model.
7. a kind of CSPLED according to claim 1, is characterized in that: described fluorescent adhesive layer is fluorescent glue paster.
8. a kind of CSPLED according to claim 1, is characterized in that: described in the be in the light lower end of glue-line concordant with the bottom of semiconductor wafer.
9. a kind of CSPLED according to claim 1, is characterized in that: described fluorescent adhesive layer is provided with substratum transparent.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520557612.0U CN204857775U (en) | 2015-07-29 | 2015-07-29 | Cspled |
| EP16802375.2A EP3217442B1 (en) | 2015-05-29 | 2016-03-31 | Encapsulation method of csp led and csp led |
| US15/535,709 US10573794B2 (en) | 2015-05-29 | 2016-03-31 | Method of packaging CSP LED and CSP LED |
| PCT/CN2016/077939 WO2016192452A1 (en) | 2015-05-29 | 2016-03-31 | Encapsulation method of csp led and csp led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520557612.0U CN204857775U (en) | 2015-07-29 | 2015-07-29 | Cspled |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204857775U true CN204857775U (en) | 2015-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520557612.0U Active CN204857775U (en) | 2015-05-29 | 2015-07-29 | Cspled |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204857775U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129223A (en) * | 2016-08-25 | 2016-11-16 | 深圳市晶仕德光电有限公司 | The mounting body of the CSP encapsulation lamp bead of a kind of LED upside-down mounting crystal grain and method for packing |
| WO2016192452A1 (en) * | 2015-05-29 | 2016-12-08 | 广州市鸿利光电股份有限公司 | Encapsulation method of csp led and csp led |
| CN106340581A (en) * | 2016-08-25 | 2017-01-18 | 深圳市晶仕德光电有限公司 | CSP lamp bead packaging method |
| CN108011005A (en) * | 2017-11-10 | 2018-05-08 | 深圳大道半导体有限公司 | Light emitting semiconductor device and its manufacture method |
-
2015
- 2015-07-29 CN CN201520557612.0U patent/CN204857775U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016192452A1 (en) * | 2015-05-29 | 2016-12-08 | 广州市鸿利光电股份有限公司 | Encapsulation method of csp led and csp led |
| US10573794B2 (en) | 2015-05-29 | 2020-02-25 | Hongli Zhihui Group Co.,Ltd. | Method of packaging CSP LED and CSP LED |
| CN106129223A (en) * | 2016-08-25 | 2016-11-16 | 深圳市晶仕德光电有限公司 | The mounting body of the CSP encapsulation lamp bead of a kind of LED upside-down mounting crystal grain and method for packing |
| CN106340581A (en) * | 2016-08-25 | 2017-01-18 | 深圳市晶仕德光电有限公司 | CSP lamp bead packaging method |
| CN108011005A (en) * | 2017-11-10 | 2018-05-08 | 深圳大道半导体有限公司 | Light emitting semiconductor device and its manufacture method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee after: Hongli Newell group Limited by Share Ltd Address before: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee before: Guangzhou Hongli Tronic Co., Ltd. |