CN204836802U - Parallelly connected structure of MOS pipe based on surface mounting - Google Patents
Parallelly connected structure of MOS pipe based on surface mounting Download PDFInfo
- Publication number
- CN204836802U CN204836802U CN201520684178.2U CN201520684178U CN204836802U CN 204836802 U CN204836802 U CN 204836802U CN 201520684178 U CN201520684178 U CN 201520684178U CN 204836802 U CN204836802 U CN 204836802U
- Authority
- CN
- China
- Prior art keywords
- thickening
- copper plate
- oxide
- semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a parallelly connected structure of MOS pipe based on surface mounting, including PCB board, first thickening red copper board and a second thickening red copper board, two above MOS pipes of PCB board surface mounting, every the grid of MOS pipe passes through the copper foil of PCB board is connected, every the drain electrode of MOS pipe is passed through first thickening red copper board is connected, every the source electrode of MOS pipe passes through second thickening red copper board is connected, each form parallelly connected structure between the MOS pipe, first thickening red copper board and second thickening red copper board fixed mounting respectively are in on the PCB board, be equipped with the terminal with external circuit connection on first thickening red copper board and the second thickening red copper board. The utility model discloses not only solved big current discharge problem, had radiating effect and thickening red copper board two high temperature resistant aspects from thickening red copper board moreover and solve the parallelly connected structure loss of the MOS pipe serious problem of generating heat, improved circuit operational reliability, install simple process simultaneously, it is convenient to maintain.
Description
Technical field
The utility model relates to semiconductor applications, is specifically related to a kind of based on surface-pasted metal-oxide-semiconductor parallel-connection structure.
Background technology
Along with the development of electron electric power technology, MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor, Metal-Oxide Semiconductor field-effect transistor) with advantages such as its high frequency performance are good, switching loss is little, input impedance is high, driving power is little, drive circuit is simple, obtain and apply more and more widely.
And in the application scenario of many low-pressure high-powers, as electro-tricycle, go sightseeing electric automobile, Small electric forklift etc., because the On current of single MOSFET is very little, therefore, for obtaining large current capacity, usually take the mode of multiple MOSFET pipe parallel connection, and then obtain larger power.But when electric current is large, circuit loss heating is serious, can damage metal-oxide-semiconductor, and then damages circuit, affects the functional reliability of whole circuit.
Utility model content
Technical problem to be solved in the utility model is that the heating of existing multiple MOSFET pipe parallel arrangement circuit loss is serious, the problem that the functional reliability of parallel circuits is low.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is to provide a kind of based on surface-pasted metal-oxide-semiconductor parallel-connection structure, comprises a pcb board, first and thickeies copper plate and the second thickening copper plate; Described pcb board surface mount two or more metal-oxide-semiconductor, the grid of each described metal-oxide-semiconductor is connected by the Copper Foil of described pcb board, the drain electrode of each described metal-oxide-semiconductor thickeies copper plate by described first and connects, the source electrode of each described metal-oxide-semiconductor thickeies copper plate by described second and connects, and forms parallel-connection structure described in each between metal-oxide-semiconductor; Described first thickening copper plate and second thickeies copper plate and is fixedly mounted on described pcb board respectively, and described first thickening copper plate and second thickeies copper plate and is provided with the terminal be connected with external circuit.
In above-mentioned one based in surface-pasted metal-oxide-semiconductor parallel-connection structure, the drain electrode of each metal-oxide-semiconductor on described pcb board and source electrode thicken copper plate and described second respectively by Surface Mount technique and described first and thicken copper plate and be connected.
In above-mentioned one based in surface-pasted metal-oxide-semiconductor parallel-connection structure, described first thickening copper plate is the U-shaped plate that two-arm width is equal, width and the length of described U-shaped plate are equal with described pcb board, the U-type groove of described second thickening copper plate and described U-shaped plate is adaptive, and described second thickening copper plate and described U-type groove inwall have even gap.
Common pcb board and thickening copper plate combine and are used in metal-oxide-semiconductor parallel-connection structure by the utility model, the grid of metal-oxide-semiconductor and control circuit thereof or other circuital current are flow through by the Copper Foil of pcb board, the drain electrode of the metal-oxide-semiconductor of big current and source electrode then flow through by adding two thickening copper plates, not only solve heavy-current discharge problem, and from thickening copper plate, there are radiating effect and thickening high temperature resistant two aspects of copper plate, solve the loss of metal-oxide-semiconductor parallel-connection structure to generate heat serious problem, improve circuit working reliability; This metal-oxide-semiconductor parallel-connection structure mounting process is simple simultaneously, easy to maintenance.
Accompanying drawing explanation
Fig. 1 provides a kind of based on surface-pasted metal-oxide-semiconductor parallel-connection structure schematic diagram for the utility model;
Fig. 2 is the specific embodiment schematic diagram that in the utility model, the first thickening copper plate and second thickeies copper plate.
Embodiment
Below in conjunction with Figure of description and specific embodiment, the utility model is described in detail.
As shown in Figure 1, the one that the utility model provides, based on surface-pasted metal-oxide-semiconductor parallel-connection structure, comprises a pcb board 1 (PrintedCircuitBoard, printed circuit board), first and thickeies copper plate 2 and the second thickening copper plate 3, pcb board 1 surface mount two or more metal-oxide-semiconductor 4 (is also pasted with metal-oxide-semiconductor 4 grid control circuit or other circuit elements, the wiring number of plies is unrestricted, will not introduce) herein, the grid 5 of each metal-oxide-semiconductor 4 is connected by the Copper Foil of pcb board 1, the drain electrode 6 of each metal-oxide-semiconductor 4 thickeies copper plate 2 by first and connects, the source electrode 7 of each metal-oxide-semiconductor 4 thickeies copper plate 3 by second and connects, parallel-connection structure is formed between each metal-oxide-semiconductor 4, first thickening copper plate 2 and the second thickening copper plate 3 are fixedly mounted on pcb board 1 respectively, first thickening red copper 2 plate and second thickeies copper plate 3 and is provided with the terminal 8 be connected with external circuit.
Common pcb board and thickening copper plate combine and are used in metal-oxide-semiconductor parallel-connection structure by the utility model, the grid of metal-oxide-semiconductor and control circuit thereof or other circuital current are flow through by the Copper Foil of pcb board, the drain electrode of the metal-oxide-semiconductor of big current and source electrode then flow through by adding two thickening copper plates, not only solve heavy-current discharge problem, and from thickening copper plate, there is radiating effect and the thickening high temperature resistant company of a copper plate aspect, solve the loss of metal-oxide-semiconductor parallel-connection structure to generate heat serious problem, improve circuit working reliability; This metal-oxide-semiconductor parallel-connection structure mounting process is simple simultaneously, easy to maintenance.
In the utility model, the drain electrode of each metal-oxide-semiconductor on pcb board and source electrode thicken copper plate and second respectively by Surface Mount technique and first and thicken copper plate and be connected, and do not need manually follow-up welding.
In the utility model, as shown in Figure 2, it is the specific embodiment that the first thickening copper plate and second thickeies copper plate, first thickening copper plate 2 is the U-shaped plate that two-arm 9 width is equal, the width of described U-shaped plate is equal with described pcb board 1 with length, second thickening copper plate 3 is adaptive with the U-type groove of U-shaped plate, and the second thickening copper plate 3 has even gap with U-type groove inwall.
The utility model is not limited to above-mentioned preferred forms, and anyone should learn the structural change made under enlightenment of the present utility model, and every have identical or close technical scheme with the utility model, all falls within protection range of the present utility model.
Claims (3)
1. one kind based on surface-pasted metal-oxide-semiconductor parallel-connection structure, comprise a pcb board, described pcb board surface mount two or more metal-oxide-semiconductor, the grid of each described metal-oxide-semiconductor is connected by the Copper Foil of described pcb board, it is characterized in that, also comprise the first thickening copper plate and second and thicken copper plate; The drain electrode of each described metal-oxide-semiconductor thickeies copper plate by described first and connects, and the source electrode of each described metal-oxide-semiconductor thickeies copper plate by described second and connects, and forms parallel-connection structure described in each between metal-oxide-semiconductor; Described first thickening copper plate and second thickeies copper plate and is fixedly mounted on described pcb board respectively, and described first thickening copper plate and second thickeies copper plate and is provided with the terminal be connected with external circuit.
2. as claimed in claim 1 a kind of based on surface-pasted metal-oxide-semiconductor parallel-connection structure, it is characterized in that, the drain electrode of each metal-oxide-semiconductor on described pcb board and source electrode thicken copper plate and described second respectively by Surface Mount technique and described first and thicken copper plate and be connected.
3. as claimed in claim 1 a kind of based on surface-pasted metal-oxide-semiconductor parallel-connection structure, it is characterized in that, described first thickening copper plate is the U-shaped plate that two-arm width is equal, width and the length of described U-shaped plate are equal with described pcb board, the U-type groove of described second thickening copper plate and described U-shaped plate is adaptive, and described second thickening copper plate and described U-type groove inwall have even gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520684178.2U CN204836802U (en) | 2015-09-06 | 2015-09-06 | Parallelly connected structure of MOS pipe based on surface mounting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520684178.2U CN204836802U (en) | 2015-09-06 | 2015-09-06 | Parallelly connected structure of MOS pipe based on surface mounting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204836802U true CN204836802U (en) | 2015-12-02 |
Family
ID=54694351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520684178.2U Active CN204836802U (en) | 2015-09-06 | 2015-09-06 | Parallelly connected structure of MOS pipe based on surface mounting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204836802U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109088551A (en) * | 2018-10-11 | 2018-12-25 | 浙江动新能源动力科技股份有限公司 | A kind of board structure of circuit of super-high-current |
-
2015
- 2015-09-06 CN CN201520684178.2U patent/CN204836802U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109088551A (en) * | 2018-10-11 | 2018-12-25 | 浙江动新能源动力科技股份有限公司 | A kind of board structure of circuit of super-high-current |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101819970B (en) | Welded IGBT and solderless diode-based series structure module | |
| CN203933364U (en) | A kind of high-power drive circuit in parallel of multiple IGBT modules | |
| CN204836802U (en) | Parallelly connected structure of MOS pipe based on surface mounting | |
| CN203826375U (en) | Metal-Oxide-Semiconductor (MOS) tubes connected in parallel to realize a structure for controlling the opening and the closing of large current | |
| CN202196771U (en) | Novel two-side cooler used for electromobile semiconductor | |
| CN203279350U (en) | MOSFET power switch modular component | |
| CN205647282U (en) | Compact power module | |
| CN205177560U (en) | Take water -cooling reactor of both ends business turn over water water -cooling board | |
| CN205177554U (en) | Take water -cooling reactor of curb plate | |
| CN201904332U (en) | Power module applied to boost converter | |
| WO2015124036A1 (en) | Switching circuit structure based on printed circuit board | |
| CN103516192B (en) | Circuit of power factor correction and switch power module, power factor correcting method | |
| CN104966706A (en) | Integrated power control unit (PCU) | |
| CN219554837U (en) | IGBT parallel current-sharing output circuit of series inverter | |
| CN201075816Y (en) | New type high power driver | |
| CN202713187U (en) | Heat radiation mounting structure of IGBT full-bridge inverter module of inverter electric welder | |
| CN103367303A (en) | High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout | |
| CN205283378U (en) | PCB board design of many parallelly connected structures of flow equalizing of MOSFET | |
| CN205177557U (en) | Take reactor water -cooling board of curb plate | |
| CN214256167U (en) | Low-cost low-voltage permanent magnet motor driver | |
| CN202840932U (en) | Inverter welding machine insulated gate bipolar translator (IGBT) peak voltage protector | |
| CN219574290U (en) | Stray inductance adjustable device applied to double-pulse test and related system | |
| CN204046400U (en) | There is the big-power transducer of multiple IGBT | |
| CN211045415U (en) | Power module of aluminium base board | |
| CN210325792U (en) | Novel power electronic power MOS module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160325 Address after: 100000, Beijing, Changping District science and Technology Park, super Road, No. 3, building 2140, room 9 Patentee after: CSIC Yuanzhou (Beijing) Science & Technology Co., Ltd. Address before: 102000, room 2359, block B, building 9, building No. 3, front road, Changping District science and Technology Park, Beijing Patentee before: BEIJING HAITE YUANZHOU NEW ENERGY TECHNOLOGY CO., LTD. |
|
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Jiashen Inventor after: Sun Dongsheng Inventor after: Wang Hongpeng Inventor after: Kang Jian Inventor before: Zhang Jiashen |