CN204772054U - A anchor clamps for polishing carborundum single crystal gulde edge - Google Patents
A anchor clamps for polishing carborundum single crystal gulde edge Download PDFInfo
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- CN204772054U CN204772054U CN201520321063.7U CN201520321063U CN204772054U CN 204772054 U CN204772054 U CN 204772054U CN 201520321063 U CN201520321063 U CN 201520321063U CN 204772054 U CN204772054 U CN 204772054U
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- silicon carbide
- gulde edge
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Abstract
The utility model relates to an anchor clamps for polishing carborundum single crystal gulde edge, these anchor clamps include bottom plate, first locating plate, second locating plate and bolt fastening board, first locating plate, second locating plate set up on two adjacent edges of bottom plate perpendicularly, and first locating plate, second locating plate set up perpendicularly, the bolt fastening board sets up on first locating plate and second locating plate, bolt fastening board and bottom plate parallel arrangement, link up being provided with the bolt jackscrew on the bolt fastening board, be provided with the screw thread corresponding with the bolt jackscrew on the bolt fastening board, the length of side of first locating plate, bottom plate is less than the diameter of crystal respectively. This crystal improves the machining efficiency in crystal plastic stage need not can directly to grind out the crystal orientation and the declination that meet the requirements to every crystal difference orientation to the crystal processing in -process greatly, has practiced thrift process time, and the input, the output that have improved whole piece processing line equipment compare.
Description
Technical field:
The utility model relates to a kind of fixture for single-crystal silicon carbide gulde edge of polishing, and belongs to the technical field of single-crystal silicon carbide processing.
Background technology:
Single-crystal silicon carbide belongs to polar crystal, has two polar surface, and silicon carbide substrates is divided into silicon face and carbon face.Before making silicon carbidebased devices, need at the certain thickness gallium nitride of silicon carbide substrate surface extension one deck or silicon carbide epitaxial layers.Usually, outer layer growth is at silicon face.In semicon industry, in order to distinguish silicon face and carbon face, adopt two of orthogonal different length gulde edges to distinguish silicon face and carbon face.Therefore the circular crystal ingot after round as a ball needs to grind two gulde edges with grinding machine.Primary and secondary gulde edge crystal orientation generally adopts X-ray diffraction method directed, wherein main gulde edge be parallel to (
) face, secondary gulde edge is parallel to (
) face, the deviation of directivity controls within ± 0.5 °.Gulde edge length then has different size according to crystal diameter difference, specifically as shown in table 1.
The specification of table 1 each size silicon carbide wafer gulde edge
The substrate of different surfaces drift angle, very large to extension technogenic influence, therefore surperficial drift angle and precision thereof need strict control, and correspondingly, the length of primary and secondary gulde edge, drift angle and precision thereof must strictly control.
To the oriented machining technique of silicon single crystal, GaAs and sapphire equal length longer (being generally greater than 100mm) monocrystalline, the expensive automation equipment of many employings at present, but this kind equipment is not suitable for the shorter single-crystal silicon carbide of crystal, and the thickness of single-crystal silicon carbide is generally less than 20mm.There is the auxiliary clamp accessory being applicable to split type single-crystal silicon carbide crystal pro cessing technique at present, can help to carry out orientation to crystal gulde edge; But existing fixture is when crystal pro cessing, still need crystal orientation one by one, to control the angle precision of primary and secondary gulde edge; Complicated operation, is unfavorable for the raising of working (machining) efficiency.
Summary of the invention:
For the deficiencies in the prior art, the utility model provides a kind of fixture for single-crystal silicon carbide gulde edge of polishing, and this fixture, without the need to carrying out orientation to each crystal, can directly grind out satisfactory crystal orientation and drift angle.
The technical solution of the utility model is as follows:
For a fixture for single-crystal silicon carbide gulde edge of polishing, comprise base plate, the first location-plate, the second location-plate and bolt fixed plate; Described first location-plate, the second location-plate are vertically set on two adjacent edges of base plate, and the first location-plate is connected with the second location-plate is vertical; Described bolt fixed plate is arranged on the first location-plate and the second location-plate upper end, and bolt fixed plate parallels with base plate; Throughly on described bolt fixed plate arrange bolt jackscrew, described bolt jackscrew is threaded with bolt fixed plate; The length of side of the first location-plate, base plate is all less than the diameter of crystal.
Preferred according to the utility model, described bolt jackscrew is arranged in the geometric center of bolt fixed plate.The benefit herein designed is, realizes bolt jackscrew force balance, thus ensures single-crystal silicon carbide stress balance to be processed.
Preferred according to the utility model, the shape of described base plate, the first location-plate, the second location-plate is square.
Preferred further according to the utility model, the length of side of described first location-plate, base plate is 3/4 ~ 9/10 of crystal diameter.
Preferred according to the utility model, the angle between described first location-plate and the second location-plate is 89.5 ° ~ 90.5 °.Because both vertical precision errors own are less than crystal primary and secondary gulde edge declination error, thus grinding goes out to meet the gulde edge of required precision.
Preferred according to the utility model, the bottom of described bolt jackscrew is rotating is provided with circular fixed head.Circular fixed head can realize single-crystal silicon carbide stress balance to be processed.
Preferred further according to the utility model, the diameter of described circular fixed head is 1/2 ~ 3/5 of crystal diameter.
Preferred further according to the utility model, be provided with a pair buffering spacer between described circular fixed head and base plate.Be clipped between buffering spacer by single-crystal silicon carbide to be processed, buffering spacer and Crystallization " sandwich structure ", be placed between circular fixed head and base plate, and fastening bolt jackscrew realizes fixing to crystal to be processed; For the more crisp frangible feature of single-crystal silicon carbide quality, buffering spacer plays the effect of buffer protection.
Preferred further according to the utility model, described buffering spacer is circular resin buffering spacer.The hardness of circular resin buffering spacer is moderate, can ensure the constant intensity to single-crystal silicon carbide to be processed, can play a protective role again to single-crystal silicon carbide to be processed.
Preferred further according to the utility model, the diameter of described buffering spacer is 1/2 ~ 3/5 of crystal diameter.
Preferred according to the utility model, the top of described bolt jackscrew is provided with nut.When fixing single-crystal silicon carbide to be processed by bolt jackscrew, nut plays power-saving function.
Single-crystal silicon carbide to be processed in use, is fixed on the medial surface of base plate by the bolt jackscrew of fixed head by this fixture, and the medial surface of single-crystal silicon carbide to be processed and the first location-plate medial surface, the second location-plate is tangent respectively, plays positioning action; Crystal is fixed on after in fixture, because crystal diameter is greater than the length of side of base plate, first, second location-plate, single-crystal silicon carbide to be processed is projected into outside the edge of base plate, by the rotation of the moving left and right of surface grinding machine platform, up and down stepping and emery wheel, thus carries out grinding.Because fixture first location-plate and the vertical precision error of the second location-plate own are less than crystal primary and secondary gulde edge declination error, thus grinding goes out to meet the gulde edge of required precision.In process, can preferentially grind main gulde edge length by the main gulde edge region of crystal upward; By described fixture 90-degree rotation, expose crystal time gulde edge region, grind corresponding gulde edge length.
The beneficial effects of the utility model:
1, the fixture for single-crystal silicon carbide gulde edge of polishing described in the utility model, without the need to directed respectively to each crystal in crystal pro cessing process, can directly grind out satisfactory crystal orientation and drift angle, greatly improve the working (machining) efficiency of crystal truing phase, save process time, improve the input of whole piece processing line equipment, output ratio.
2, the fixture for single-crystal silicon carbide gulde edge of polishing described in the utility model, can Long-Time Service after mould machines for the first time, can reusing strong, and structure is simple, durable; Reduce production cost;
3, the fixture for single-crystal silicon carbide gulde edge of polishing described in the utility model, process simple possible, machining accuracy is high, does not need numerous and diverse operation to be just well positioned to meet processing request.
Accompanying drawing illustrates:
Fig. 1 is fixture schematic diagram described in the utility model.
Wherein, 1, base plate; 2, the first location-plate; 3, nut; 4, the second location-plate; 5, circular fixed head; 6, buffering spacer; 7, crystal; 8, bolt fixed plate; 9, bolt jackscrew.
Detailed description of the invention:
Below in conjunction with embodiment and Figure of description, the utility model is described in detail, but is not limited thereto.
Embodiment 1,
As shown in Figure 1.
For a fixture for single-crystal silicon carbide gulde edge of polishing, comprise base plate 1, first location-plate 2, second location-plate 4 and bolt fixed plate 8; The shape of described base plate, the first location-plate, the second location-plate is square; First location-plate 2, second location-plate 4 is vertically set on two adjacent edges of base plate 1, and the first location-plate 2, second location-plate 4 is vertically arranged; Bolt fixed plate 8 is arranged on the first location-plate 2 and the second location-plate 4, and bolt fixed plate 8 and base plate 1 be arranged in parallel; Throughly on bolt fixed plate 8 be provided with bolt jackscrew 9, described bolt jackscrew 9 is threaded with bolt fixed plate 8; The length of side of the first location-plate 2, base plate 1 is respectively 3/4 of crystal 7 diameter.
Embodiment 2,
As described in Example 1 for a fixture for single-crystal silicon carbide gulde edge of polishing, its difference is: described bolt jackscrew 9 is arranged in the geometric center of bolt fixed plate 8.
Embodiment 3,
As described in Example 1 for a fixture for single-crystal silicon carbide gulde edge of polishing, its difference is: the angle between described first location 2 plates and the second location-plate 4 is 89.5 °.Because both vertical precision errors own are less than crystal 7 primary and secondary gulde edge declination error, thus grinding goes out to meet the gulde edge of required precision.
Embodiment 4,
As described in Example 1 for a fixture for single-crystal silicon carbide gulde edge of polishing, its difference is: the top of described bolt jackscrew 9 is rotating is provided with circular fixed head 5; The diameter of circular fixed head 5 is 1/2 of crystal 7 diameter.Circular fixed head 5 can realize single-crystal silicon carbide stress balance to be processed.
Embodiment 5,
As described in Example 4 for a fixture for single-crystal silicon carbide gulde edge of polishing, its difference is: be provided with a pair buffering spacer 6 between described circular fixed head 5 and base plate 1; The diameter of described buffering spacer 6 is 1/2 of crystal 7 diameter.Be clipped in by single-crystal silicon carbide to be processed between buffering spacer 6, buffering spacer 6 and crystal 7 are formed " sandwich structure ", are placed between circular fixed head 5 and base plate 1, and fastening bolt jackscrew 9 realizes fixing to crystal 7 to be processed; Single-crystal silicon carbide quality is more crisp, and buffering spacer 6 plays the effect of buffer protection.
Embodiment 6,
As described in Example 5 for a fixture for single-crystal silicon carbide gulde edge of polishing, its difference is: described buffering spacer 6 is circular resin buffering spacer.The hardness of circular resin buffering spacer is moderate, can ensure the constant intensity to single-crystal silicon carbide to be processed, can play a protective role again to crystal to be processed.
Embodiment 7,
As described in Example 1 for a fixture for single-crystal silicon carbide gulde edge of polishing, its difference is: the afterbody of described bolt jackscrew 9 is provided with nut 3; The top of described bolt jackscrew 9 is provided with nut 3.When fixing single-crystal silicon carbide to be processed by bolt jackscrew 9, nut 3 plays power-saving function.
Claims (10)
1. for a fixture for single-crystal silicon carbide gulde edge of polishing, it is characterized in that, comprise base plate, the first location-plate, the second location-plate and bolt fixed plate; Described first location-plate, the second location-plate are vertically set on two adjacent edges of base plate, and the first location-plate is connected with the second location-plate is vertical; Described bolt fixed plate is arranged on the first location-plate and the second location-plate upper end, and bolt fixed plate parallels with base plate; Throughly on described bolt fixed plate arrange bolt jackscrew, described bolt jackscrew is threaded with bolt fixed plate; The length of side of the first location-plate, base plate is all less than the diameter of crystal.
2., as claimed in claim 1 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, described bolt jackscrew is arranged in the geometric center of bolt fixed plate.
3., as claimed in claim 1 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, the shape of described base plate, the first location-plate, the second location-plate is square.
4., as claimed in claim 3 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, the length of side of described first location-plate, base plate is 3/4 ~ 9/10 of crystal diameter.
5., as claimed in claim 1 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, the angle between described first location-plate and the second location-plate is 89.5 ° ~ 90.5 °.
6. as claimed in claim 1 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, the described fixture for single-crystal silicon carbide gulde edge of polishing comprises circular fixed head, and described circular fixed head rotates the bottom being arranged on bolt jackscrew.
7., as claimed in claim 6 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, the diameter of described circular fixed head is 1/2 ~ 3/5 of crystal diameter.
8., as claimed in claim 6 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, between described circular fixed head and base plate, be provided with a pair buffering spacer.
9., as claimed in claim 8 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, described buffering spacer is circular resin buffering spacer; The diameter of described buffering spacer is 1/2 ~ 3/5 of crystal diameter.
10., as claimed in claim 1 for the fixture of single-crystal silicon carbide gulde edge of polishing, it is characterized in that, the top of described bolt jackscrew is provided with nut.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520321063.7U CN204772054U (en) | 2015-05-19 | 2015-05-19 | A anchor clamps for polishing carborundum single crystal gulde edge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520321063.7U CN204772054U (en) | 2015-05-19 | 2015-05-19 | A anchor clamps for polishing carborundum single crystal gulde edge |
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| Publication Number | Publication Date |
|---|---|
| CN204772054U true CN204772054U (en) | 2015-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520321063.7U Expired - Fee Related CN204772054U (en) | 2015-05-19 | 2015-05-19 | A anchor clamps for polishing carborundum single crystal gulde edge |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104827397A (en) * | 2015-05-19 | 2015-08-12 | 山东大学 | Clamp for polishing positioning edges of SiC single crystals and application thereof |
-
2015
- 2015-05-19 CN CN201520321063.7U patent/CN204772054U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104827397A (en) * | 2015-05-19 | 2015-08-12 | 山东大学 | Clamp for polishing positioning edges of SiC single crystals and application thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151118 |