CN204707339U - Multilager base plate - Google Patents

Multilager base plate Download PDF

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Publication number
CN204707339U
CN204707339U CN201520211672.7U CN201520211672U CN204707339U CN 204707339 U CN204707339 U CN 204707339U CN 201520211672 U CN201520211672 U CN 201520211672U CN 204707339 U CN204707339 U CN 204707339U
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conductive pattern
insulating substrate
base plate
multilager base
width
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谷口胜己
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)

Abstract

The utility model provides a kind of miniaturization that can realize multilager base plate, and can suppress the multilager base plate of the short circuit between conductive pattern.This multilager base plate is formed with conductive pattern, and thermoplastic multiple insulating substrate is stacked to be formed by having.When having an X-rayed from the direction perpendicular to stacked direction, conductive pattern is formed in the mode that its side width is narrower than opposite side width, and is included in the first conductive pattern and the second conductive pattern that positions different in stacked direction is formed.During from direction perspective perpendicular to stacked direction, the narrow side of the width of the first conductive pattern is towards the second conductive pattern side, and the narrow side of the width of the second conductive pattern is towards the first conductive pattern side.When overlooking, the second conductive pattern to be arranged in the first conductive pattern at least partially between two parts that predetermined distance is adjacent.

Description

Multilager base plate
Technical field
The multilager base plate that the utility model relates to stacked insulating substrate and formed.
Background technology
As the manufacture method of multilager base plate in the past, such as, described in patent documentation 1.In this manufacture method, first Copper Foil is attached the two sides at polyimide film, via the through hole be formed on polyimide film, the Copper Foil on two sides is connected to each other.Then, the Copper Foil on two sides is etched, form planar coil.Then, via other polyimide film stacked kicker magnet layer on the two sides of planar coil.Thus, an example and the planar inductor of multilager base plate is made.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 4-368105 publication
Utility model content
Utility model technical problem to be solved
In the manufacture method of the multilager base plate described in patent documentation 1, the conductive pattern of wire is closely formed.By stacked polyimide film utilize add drop stamping carry out integration when, polyimide resin flow, conductive pattern is tilted, I'm afraid understand being short-circuited between close conductive pattern.On the other hand, if in order to avoid the short circuit between conductive pattern, and expanded at the interval of close conductive pattern, then component size increases.
The purpose of this utility model is to provide a kind of miniaturization realizing multilager base plate, and can suppress the multilager base plate of short circuit between conductive pattern.
The technical scheme that technical solution problem adopts
(1) multilager base plate of the present utility model is formed with conductive pattern, and thermoplastic multiple insulating substrate is stacked to be formed by having.When having an X-rayed from the direction perpendicular to stacked direction, conductive pattern is formed in the mode that its side width is narrower than opposite side width, and is included in the first conductive pattern and the second conductive pattern that positions different in stacked direction is formed.During from direction perspective perpendicular to stacked direction, the narrow side of the width of the first conductive pattern is towards the second conductive pattern side, and the narrow side of the width of the second conductive pattern is towards the first conductive pattern.When overlooking, the second conductive pattern at least partially, to be arranged in the first conductive pattern between two parts that predetermined distance is adjacent.
In the structure shown here, because the width of the insulating substrate side of conductive pattern is wider than the width of its opposition side, then the interval of the conductive pattern being formed in the first insulating substrate and the conductive pattern that is formed in the second insulating substrate broadens.Therefore, even if the insulating substrate flowing when heating and pressurize, the conductive pattern being formed in the first insulating substrate also can be suppressed to be short-circuited with the conductive pattern being formed in the second insulating substrate.
In addition, owing to not needing to make at the conductive pattern of the first insulating substrate formation and broadening at the interval of the conductive pattern of the second insulating substrate formation, and change the setting of conductive pattern, therefore component size can not become large.In addition, owing to not needing to make at the conductive pattern of the first insulating substrate formation and broadening at the interval of the conductive pattern of the second insulating substrate formation, and reduce the sectional area of conductive pattern, therefore conductor resistance can not diminish.
In addition, the conductive pattern that formed at the first insulating substrate can be made and while the interval of conductive pattern that the second insulating substrate is formed broadens, increase conductive pattern and the contact area of insulating substrate being formed with this conductive pattern.Therefore, conductive pattern can be improved and be formed with the bond strength of insulating substrate of this conductive pattern.
(2) in multilager base plate of the present utility model, the first conductive pattern also can be made to be connected with the second conductive pattern, thus form coil.
Usually, in the laminated inductor that high frequency band uses, the change of the line capacitance between conductive pattern can affect the characteristic of laminated inductor.In structure of the present utility model, because the interval between close conductive pattern broadens, though conductive pattern be provided with deviation slightly, line capacitance be also difficult to change.Therefore, laminated inductor, also can the characteristic deviation of inhibition layer laminating inductance when high frequency band uses.In addition, usually, in laminated inductor, the conductive pattern of wire forms structure close to each other mostly.Therefore, particular significant effect of the present utility model in the structure shown here.
(3) in multilager base plate of the present utility model, when overlooking, the second conductive pattern between two parts adjacent across predetermined distance being arranged on the first conductive pattern at least partially, preferably, be positioned at lower area: on the interarea of the first conductive pattern side, in the region between two parts that predetermined distance is adjacent.
In this structure, the interval of the first conductive pattern and the second conductive pattern can be made to expand further.
Utility model effect
According to the utility model, the miniaturization of multilager base plate can be realized, and the short circuit that is formed between the conductive pattern of multilager base plate can be suppressed.
Accompanying drawing explanation
Fig. 1 is the decomposition view of laminated inductor of the present embodiment.
Fig. 2 A is the A-A profile of laminated inductor of the present embodiment.Fig. 2 B is the B-B profile of laminated inductor of the present embodiment.
Fig. 3 is the A-A profile of the part representing laminated inductor of the present embodiment.
Fig. 4 A to Fig. 4 D is the B-B profile of the manufacture method representing laminated inductor of the present embodiment.
Fig. 5 A to Fig. 5 E is the B-B profile of the manufacture method representing the laminated inductor that modified embodiment of the present embodiment relates to.
Fig. 6 A to Fig. 6 D is the profile of the part representing the laminated inductor that modified embodiment of the present embodiment relates to.
Embodiment
The laminated inductor 10 that execution mode of the present utility model relates to is described.Laminated inductor 10 is an example of multilager base plate of the present utility model.Fig. 1 is the decomposition view of laminated inductor 10.Laminated inductor 10 has the face shaping of rectangular flat shape.Laminated inductor 10 is using insulating substrate 11A as the superiors, and insulating substrate 11A ~ 11D stacks gradually and forms.Insulating substrate 11A ~ 11D has thermoplasticity.The gyrate conductive pattern 12,13 forming inductance is formed at insulating substrate 11A, 11C.Conductive pattern 12 is an example of the first conductive pattern of the present utility model.Conductive pattern 13 is an example of the second conductive pattern of the present utility model.Conductive pattern 12,13 is formed by multiple straight line portioies parallel each other.At the lower surface of laminated inductor 10, be formed with conductive pattern 15A, the 15B of the rectangle forming outer electrode.
That is, laminated inductor 10 by formation conductive pattern, to have thermoplastic multiple insulating substrate stacked and formed.Conductive pattern 12 is connected with conductive pattern 13, forms coil.
Conductive pattern 12 is formed at the lower surface of insulating substrate 11A.When overlooking, conductive pattern 12 using the central authorities of insulating substrate 11A as winding center, to reel, the mode of twice is formed.When overlooking, at the first end that the central authorities of insulating substrate 11A form conductive pattern 12, the angle of insulating substrate 11A forms the second end of conductive pattern 12.
In insulating substrate 11B, form interlayer connection conductor 16A, the 16B of through insulating substrate 11B in the stacking direction.When overlooking, interlayer connection conductor 16A is overlapping with the first end of conductive pattern 12, bonding conductor pattern 12.When overlooking, interlayer connection conductor 16B is overlapping with the second end of conductive pattern 12, bonding conductor pattern 12.
Conductive pattern 13,14 is formed at the upper surface of insulating substrate 11C.When overlooking, conductive pattern 13 using the central authorities of insulating substrate 11A as winding center, formed in the mode reeled once.When overlooking, conductive pattern 13 is formed in the mode sandwiched by conductive pattern 12.In the mode of same interlayer connection conductor 16A overlap when overlooking, form the first end of conductive pattern 13.Interlayer connection conductor 16A is connected with conductive pattern 13.The angle of insulating substrate 11C is formed the second end of conductive pattern 13.Conductive pattern 14 is rectangle, is formed during to overlook with the mode of interlayer connection conductor 16B overlap.Conductive pattern 14 is connected with interlayer connection conductor 16B.
In insulating substrate 11C, form interlayer connection conductor 16C, the 16D of through insulating substrate 11C in the stacking direction.Interlayer connection conductor 16C, overlapping with the second end of conductive pattern 13 when overlooking, be connected to conductive pattern 13.Interlayer connection conductor 16D, overlapping with conductive pattern 14 when overlooking, be connected to conductive pattern 14.
In insulating substrate 11D, form interlayer connection conductor 16E, the 16F of through insulating substrate 11D in the stacking direction.Interlayer connection conductor 16E is overlapping with interlayer connection conductor 16C when overlooking, and forms one with interlayer connection conductor 16C.Interlayer connection conductor 16F is overlapping with interlayer connection conductor 16D when overlooking, and forms one with interlayer connection conductor 16D.
At the lower surface of insulating substrate 11D, conductive pattern 15A, 15B are formed in the end of the long side direction of insulating substrate 11D.Conductive pattern 15A is overlapping with interlayer connection conductor 16E when overlooking, and is connected with interlayer connection conductor 16E.Conductive pattern 15B is overlapping with interlayer connection conductor 16F when overlooking, and is connected with interlayer connection conductor 16F.
Insulating substrate 11A ~ 11D is such as formed by thermoplastic resins such as liquid crystal polymer (LCP), polyimides (PI).Insulating substrate 11A ~ 11D is formed by the thermoplastic resin that principal component essence is identical.Conductive pattern 12 ~ 14,15A, 15B are formed by conductive materials such as Copper Foils.Interlayer connection conductor 16A ~ 16D makes it be solidified to form by filling thickener to the through hole be formed on insulating substrate.
Fig. 2 A is the A-A profile of laminated inductor 10.A part, i.e. the conductive pattern 12A ~ 12D of conductive pattern 12 (with reference to Fig. 1) is formed at the lower surface of insulating substrate 11A.A part, i.e. conductive pattern 13A, 13B of conductive pattern 13 is formed at the upper surface of insulating substrate 11C.Conductive pattern 12A ~ 12D, 13A, 13B are embedded into insulating substrate 11B.
Conductive pattern 12A and conductive pattern 12B is close to each other.Conductive pattern 13A is formed in the mode entered between conductive pattern 12A and conductive pattern 12B.The section of conductive pattern 12A, 12B has with the limit of insulating substrate 11A side for long limit, and the limit of insulating substrate 11B side is the trapezoidal of minor face.The region that conductive pattern 12A and conductive pattern 12B sandwiches, attenuates from conductive pattern 13A side to front end, insulating substrate 11A side.The section of conductive pattern 13A has with the limit of insulating substrate 11C side for long limit, and the limit of insulating substrate 11B side is the trapezoidal of minor face.Conductive pattern 12C, 12D, 13B are formed in the same manner as conductive pattern 12A, 12B, 13A.
That is, have an X-rayed from the direction perpendicular to stacked direction, conductive pattern is formed in the mode that its side width is narrower than opposite side width, and is included in conductive pattern 12 (with reference to Fig. 1) and conductive pattern 13 that positions different in stacked direction is formed.Have an X-rayed from the direction perpendicular to stacked direction, the narrow side of the width of conductive pattern 12 is towards conductive pattern 13 side, and the narrow side of the width of conductive pattern 13 is towards conductive pattern 12 side.When overlooking, conductive pattern 13 to be arranged in conductive pattern 12 at least partially between two parts that predetermined distance is adjacent.
More specifically, conductive pattern 12,13 is formed as trapezoidal when the direction perpendicular to stacked direction is had an X-rayed.At conductive pattern 12,13, have an X-rayed from the direction perpendicular to stacked direction, to its opposite side, there is tapering from the insulating substrate side forming this conductive pattern.The interarea forming conductor 13 in the interarea of conductive pattern 12 and the interarea of insulating substrate 11C is formed mutually relative in the interarea of insulating substrate 11A.When overlooking, the conductive pattern 13A being formed in insulating substrate 11C is arranged at and is formed between conductive pattern 12A, 12B of insulating substrate 11A.When overlooking, the conductive pattern 13B being formed in insulating substrate 11C is arranged at and is formed between conductive pattern 12C, 12D of insulating substrate 11A.
Fig. 2 B is the B-B profile of laminated inductor 10.A part, i.e. conductive pattern 12A, 12C ~ 12E of conductive pattern 12 (with reference to Fig. 1) is formed at the lower surface of insulating substrate 11A.A part, i.e. conductive pattern 13A, 13C of conductive pattern 13 is formed at the upper surface of insulating substrate 11C.Conductive pattern 12A, 12C ~ 12E, 13A is embedded into insulating substrate 11B.A part of conductive pattern 13C is embedded into insulating substrate 11B, and the other parts of conductive pattern 13C are embedded into insulating substrate 11C.
The section of conductive pattern 12E has with the limit of insulating substrate 11A side for long limit, and the limit of insulating substrate 11B side is the trapezoidal of minor face.The section of conductive pattern 13C attenuates from insulating substrate 11C side to front end, insulating substrate 11B side.Conductive pattern 13A is formed in the mode entered between conductive pattern 12A and conductive pattern 12E.Conductive pattern 12E utilizes interlayer connection conductor 16A to be connected with conductive pattern 13C.
Fig. 3 is the A-A profile of a part for presentation layer laminating inductance 10.In the section of conductive pattern 13A, the length on long limit is set to W1, in the section of conductive pattern 13A, the length of minor face is set to W2.In insulating substrate 11A side, the interval of conductive pattern 12A and conductive pattern 12B is set to W3, and in conductive pattern 13A side, the interval of conductive pattern 12A and conductive pattern 12B is set to W4.Length W2 is shorter than length W1.Interval W4 is wider than interval W3.Interval W3 is wider than length W2.Namely, when overlooking, the conductive pattern 13 between two parts adjacent across predetermined distance being arranged on conductive pattern 12 (with reference to Fig. 1) be positioned at lower area at least partially: the interarea of conductive pattern 12 side, the region between two parts that predetermined distance is adjacent.
Fig. 4 A to Fig. 4 D is the B-B profile of the manufacture method of presentation layer laminating inductance 10.In this manufacture method, there is the conductive pattern thermoplastic insulating substrate formed in order to the patterning for circuit is formed.Then, by comprise insulating substrate 11A and insulating substrate 11C, multiple insulating substrates of being formed with conductive pattern carry out stacked.Then, the insulating substrate after stacked is heated and pressurizes, carries out integration.That is, by the insulating substrate heating after stacked being pressurizeed simultaneously, integration is carried out.Insulating substrate 11A is an example of the first insulating substrate of the present utility model.Insulating substrate 11C is an example of the second insulating substrate of the present utility model.
Specifically, first, as shown in Figure 4 A, on whole of a face of insulating substrate 11A, the conductor foil 21 that Copper Foil etc. is formed is attached.Then, as shown in Figure 4 B, the resist after formation regulation shape is formed in the surface of conductor foil 21, the part not forming resist in conductor foil 21 is etched.Thus, insulating substrate 11A forms conductive pattern 12.At this moment, form conductive pattern 12, the section of conductive pattern 12A, 12E is formed trapezoidal.That is, formed in the operation of conductive pattern 12, have an X-rayed from the direction perpendicular to stacked direction, the width of the insulating substrate 11A side of conductive pattern 12 is wider than the width of its opposition side.
Then, as shown in Figure 4 C, utilize the operation identical with the operation forming conductive pattern 12, insulating substrate 11C is formed conductive pattern 13, insulating substrate 11D is formed conductive pattern 15A, 15B.In addition, laser processing or etching etc. is utilized to form through hole, to this through hole filled conductive thickener 22 in the predetermined portion of insulating substrate 11B.The conductive material that conducting paste 22 is such as principal component by tin or copper is formed.
Further, using insulating substrate 11A as the superiors, insulating substrate 11A ~ 11D is stacked gradually.At this moment, the interarea of conductive pattern 12 is formed with down by the interarea of insulating substrate 11A.The interarea of conductive pattern 13 is formed with upward by the interarea of insulating substrate 11C.The interarea of conductive pattern 15A, 15B is formed with down by the interarea of insulating substrate 11D.That is, in the operation of stacked insulating substrate 11A ~ 11D, the interarea of conductive pattern 12 side of insulating substrate 11A is formed, mutually relative with the interarea of conductive pattern 13 side being formed with insulating substrate 11C.In addition, when overlooking, to be arranged in the conductive pattern 12 being formed in insulating substrate 11A at least partially between two parts that predetermined distance is adjacent by what be formed in the conductive pattern 13 of insulating substrate 11C.
Then, as shown in Figure 4 D, so that the temperature of the thermoplastic resin thermo-compressed of insulating substrate 11A ~ 11D can will be formed, drop stamping is added to stacked insulating substrate 11A ~ 11D.This adds drop stamping and carries out heating and pressurizeing simultaneously.Thus, insulating substrate 11A ~ 11D is integrated.At this moment, by making conducting paste 22 solidify, form interlayer connection conductor 16A.In addition, conductive pattern 13A enters between conductive pattern 12A and conductive pattern 12E.
Utilize above operation, complete layer laminating inductance 10.In addition, with form mode that the operation of interlayer connection conductor 16A carries out simultaneously and utilize the operation same with the operation forming interlayer connection conductor 16A to form interlayer connection conductor 16B ~ 16F (reference Fig. 1).Conductive pattern 14 is formed together with conductive pattern 13.
In present embodiment, as shown in Figure 3, between conductive pattern 12A and conductive pattern 12B, conductive pattern 13A is formed when overlooking.The interval of conductive pattern 12A and conductive pattern 12B, broadens from conductive pattern 11A side to conductive pattern 13A side.The width of conductive pattern 13A narrows from insulating substrate 11C side to insulating substrate 11B side.
Therefore, as shown in phantom in Figure 3, in conductive pattern 12A, 12B and the close region of conductive pattern 13A, the interval of conductive pattern 12A, 12B and conductive pattern 13A broadens.As a result, though when adding drop stamping thermoplastic resin flow, also can suppress the short circuit of conductive pattern 12A, 12B and conductive pattern 13A.In addition, because the interval W3 of conductive pattern 12A and conductive pattern 12B is longer than the bond length W2 of conductive pattern 13A, the interval of conductive pattern 12A, 12B and conductive pattern 13A can broaden further.
In addition, without the need in order to make the interval of conductive pattern 12A, 12B and conductive pattern 13A broaden, and change the setting of conductive pattern 12A, 12B, therefore component size can not become large.In addition, without the need in order to make the interval of conductive pattern 12A, 12B and conductive pattern 13A broaden, and reduce the sectional area of conductive pattern 12A, 12B, 13A, therefore conductor resistance can not diminish.
In addition, while making the interval of conductive pattern 12A, 12B and conductive pattern 13A broaden, the contact area of conductive pattern 12A, 12B, 13A and insulating substrate 11A, 11C can be increased.Therefore, the bond strength of conductive pattern 12A, 12B, 13A and insulating substrate 11A, 11C can be improved.
In addition, usually, in the laminated inductor that high frequency band uses, the line capacitance change between conductive pattern can affect the characteristic of laminated inductor.In present embodiment, because the interval of conductive pattern 12A, 12B and conductive pattern 13A broadens, even if the setting of conductive pattern 12A, 12B, 13A deviation slightly, line capacitance also not too changes.Therefore, laminated inductor 10, also can the characteristic deviation of inhibition layer laminating inductance 10 when high frequency band uses.In addition, as shown in Figure 1, in laminated inductor 10, the structure that conductive pattern 12,13 extends parallel to each other mostly is formed.In other words, in laminated inductor 10, mostly form structure as shown in Figure 3.Therefore, the utility model is useful especially for laminated inductor 10.
In addition, as described above, insulating substrate 11A ~ 11D is made up of the thermoplastic resin that principal component essence is identical.Therefore, thermal coefficient of expansion of the temperature of insulating substrate 11A ~ 11D thermo-compressed, insulating substrate 11A ~ 11D etc. can be allowed almost equal mutually.As a result, be different from the situation of such as different via the insulating substrate such from adhesive linkage material junction isolation base materials, after adding drop stamping, insulating substrate 11A ~ 11D can be suppressed mutually to peel off.
Fig. 5 A to Fig. 5 E is the B-B profile of the manufacture method representing the laminated inductor 10 that modified embodiment of the present embodiment relates to.Hereinafter, the point different from the manufacture method of above-mentioned laminated inductor 10 is described.First, as shown in Figure 5A, be formed on the interarea of conductive pattern 13 in the interarea of insulating substrate 11C, utilize printing etc. to carry out application to the thermoplastic resin of thickener shape.Thus, the insulating substrate 31B being layered in insulating substrate 11C is formed.
Then, as shown in Figure 5 B, with regulation shape, the resist of patterning is formed in the surface of insulating substrate 31B, the part not forming resist in insulating substrate 31B is etched.Thus, through hole 23 is formed at insulating substrate 31B.In addition, the masterplate being patterned into regulation shape also can be adopted to be printed on by thermoplastic resin on insulating substrate 11C, form the insulating substrate 31B with through hole 23, replace Fig. 5 A and the operation shown in Fig. 5 B.
Then, as shown in Figure 5 C, to through hole 23 filled conductive thickener 22.Then, as shown in Fig. 5 D and Fig. 5 E, stacked insulating substrate 11A, 31B, 11C, 11D, carry out adding drop stamping.Utilize above operation, complete layer laminating inductance 10.
In the manufacture method of the laminated inductor 10 that modified embodiment of the present embodiment relates to, due to through hole 23 only through insulating substrate 31B in the stacking direction, form hole with the end portion.Therefore, during to through hole 23 filled conductive thickener 22, conducting paste 22 can not spill with the peristome injecting conducting paste side opposite side from the peristome of through hole 23.
Fig. 6 A to Fig. 6 D is the profile of the part representing the laminated inductor that modified embodiment of the present embodiment relates to.Hereinafter, the structure different from the structure of laminated inductor 10 (with reference to Fig. 2 A, Fig. 2 B) is described.In variation shown in Fig. 6 A, the interarea of the insulating substrate 11A side of conductive pattern 42 is larger than the surface roughness of the interarea of its opposition side.The interarea of the insulating substrate 11C side of conductive pattern 43 is larger than the surface roughness of the interarea of its opposition side.That is, have an X-rayed from the direction perpendicular to stacked direction, the interarea of the wider width side of conductive pattern 42,43 is larger than the surface roughness of the interarea of its opposition side.In laminated inductor as shown in Figure 6A, insulating substrate 11A, 11C of being formed with conductive pattern 42,43 are carried out stacked, in this structure, the bond strength of conductive pattern 42,43 and insulating substrate 11A, 11C can be improved.
The sunken end face of conductive pattern 52,53 in variation shown in Fig. 6 B.The end face bulging of conductive pattern 62,63 in variation shown in Fig. 6 C.In variation shown in Fig. 6 D, in the end face of conductive pattern 72, mutually relative end face tilts relative to stacked direction, and the end face of the opposition side of mutually relative end face is parallel relative to stacked direction.
In addition, in the laminated inductor 10 of present embodiment, its coil axes is towards stacked direction, but laminated inductor of the present utility model is not limited thereto.In laminated inductor of the present utility model, its coil axes also can be made vertically in the direction of stacked direction.
In addition, the laminated inductor 10 of present embodiment is an example of the present utility model, and multilager base plate of the present utility model is not limited thereto.In addition, multilager base plate of the present utility model comprise the chip inductor after by laminated inductor 10 chip etc., the SMD components that comprises structure of the present utility model.
Label declaration
10 laminated inductors
11A insulating substrate (the first insulating substrate)
11C insulating substrate (the second insulating substrate)
11B, 11D, 31B insulating substrate
12 conductive patterns (the first conductive pattern)
13 conductive patterns (the second conductive pattern)
12A ~ 12E, 13A ~ 13C, 14,15A, 15B, 42,43,52,53,62,63,72 conductive patterns
16A ~ 16F interlayer connection conductor
21 conductor foils
22 conducting pastes
23 through holes

Claims (3)

1. a multilager base plate, described multilager base plate is formed with conductive pattern, and by having, thermoplastic multiple insulating substrate is stacked to be formed, and it is characterized in that,
When having an X-rayed from the direction perpendicular to stacked direction, described conductive pattern is formed in the mode that its side width is narrower than opposite side width, and is included in the first conductive pattern and the second conductive pattern that positions different in stacked direction is formed,
During from direction perspective perpendicular to stacked direction, the narrow side of the width of described first conductive pattern towards described second conductive pattern side, the narrow side of the width of described second conductive pattern towards described first conductive pattern side,
When overlooking, described second conductive pattern to be arranged in described first conductive pattern at least partially between two parts that predetermined distance is adjacent.
2. multilager base plate as claimed in claim 1, it is characterized in that, described first conductive pattern is connected with described second conductive pattern, thus forms coil.
3. multilager base plate as claimed in claim 1 or 2, it is characterized in that, when overlooking, described second conductive pattern between the two parts adjacent across described predetermined distance being arranged on described first conductive pattern be positioned at lower area at least partially: on the interarea of described first conductive pattern side, in the region between two parts that described predetermined distance is adjacent.
CN201520211672.7U 2014-04-10 2015-04-09 Multilager base plate Active CN204707339U (en)

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JP2014081168A JP6424453B2 (en) 2014-04-10 2014-04-10 Multilayer substrate manufacturing method and multilayer substrate

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