CN204706583U - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- CN204706583U CN204706583U CN201520078016.4U CN201520078016U CN204706583U CN 204706583 U CN204706583 U CN 204706583U CN 201520078016 U CN201520078016 U CN 201520078016U CN 204706583 U CN204706583 U CN 204706583U
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- light
- led chip
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- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The utility model provides a kind of light-emitting device, is a kind of simple structure, while suppression Ag Ion transfer, and the device that can install to high-density.Light-emitting device possesses substrate, is formed at having the drafting department of conductivity and being placed in the surface of drafting department of substrate surface, LED (the Light Emitting Diode) chip of the light of light emitting layer is shot out from exit facet, the 1st recess of 1st peristome more bigger than the exit facet of LED chip is formed on the surface of drafting department, LED chip is accommodated in the 1st recess, is engaged in the bottom surface of the 1st recess via silver (Ag) cream.
Description
Technical field
The utility model relates to a kind of light-emitting device and its manufacture method that are equipped on UV curing apparatus etc., and particularly one uses the light-emitting device of the light-emitting component of LED (Light Emitting Diode) etc.
Background technology
In the past, adopted UV curing apparatus, as the ultraviolet hardening resin that the sticker of FPD (Flat Panel Display) periphery is used and the ultraviolet ray hardening type that uses as the ink of sheet-fed offset printing ink curing.
As UV curing apparatus, in the past, it is well known that using the lamp tube type irradiation unit as light source such as high-pressure mercury-vapor lamp and mercury xenon lamp.In recent years, owing to reducing the requirement such as miniaturization of power consumption, long lifetime, plant bulk, in order to replace discharge lamp in the past, develop a kind of UV curing apparatus (such as, patent documentation 1) utilized as light source by LED (Light Emitting Diode).
UV curing apparatus described in patent documentation 1 possesses multiple LED modules of the linear alignment.Each LED module is by having the long formation such as LED chip (in general, also having the situation being called " mould " and " LED "), secondary installation base plate, framework of spike at ultraviolet region, LED chip is fixed on secondary installation base plate by Mold binder adhesion.
Mold binder is a kind of in order to LED chip being bonded to the grafting material that substrate etc. uses, in general, use the Mold binder, metal sticker, silver (Ag) cream etc. of the Mold binder of silicon-type, epoxy (such as, patent documentation 2), but because consider cheap, thermal endurance and moisture-proof high, the factor such as lower than the spring rate of solder is more the Ag cream adopting Ag epoxy, Ag polyimides system.But if someone points out the optical semiconductor being carried out set LED etc. by Ag cream, then because of so-called Ag Ion transfer, reliability can reduce (such as, non-patent literature 1).
As described in non-patent literature 1, Ag Ion transfer is the one in the electrochemical mobile phenomenon of metal, to move the phenomenon of growth for a kind of due to electric decomposition Ag with mottled or dendroid.Like this, if Ag ionization growing, then finally contact with wire bonds with the electrode of LED chip, the worst situation be make LED chip electrode between (that is, between anode and negative electrode) short circuit.Further, if the inter-electrode short-circuit of LED chip, then LED chip does not work, and damages.
So, Ag Ion transfer is because the ionization of Ag causes, but particularly in the optical semiconductor of the LED chip sending light etc., exists and make the ionizable worry of Ag (such as, patent documentation 3) by surface plasmons.As described in patent documentation 3, if irradiate light to metallic, then produce surface plasmons, the electric field strength of this part can increase locally, and metallic can ionization.That is, if formed in the mode being carried out the optical semiconductors such as set LED chip by Ag cream, then can produce following problem: by injecting Ag cream from the light of LED chip, can produce surface plasmons, the Ag contained in Ag cream can ionization.If by the ionization of Ag, and Ag is with mottled or dendritic growth, finally can make the inter-electrode short-circuit of LED chip, LED chip does not work, and damages.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2011-146646 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2013-243316 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2008-070187 publication
Non-patent literature
Non-patent literature 1: " reliability handbook ", Renesas Tech Corp, Rev.1.01, on November 28th, 2008, P. (4-25)-(4-27)
Utility model content
Utility model problem to be solved
For solving the problem of this Ag Ion transfer, in advance by result from the Ag of Ag Ion transfer occur time the displacement of Ag longer set, the electric field strength reduced between pattern is effective, therefore, in general, take to guarantee this countermeasure of enough insulation distances between Ag cream and each electrode of LED chip be adjacent and wire bonds.But structure as described in Patent Document 1, if arrange LED chip (that is, LED module) this structure to high-density, due to the restriction of configuration aspect, is difficult to guarantee enough insulation distances.
In addition, the Ag contained in Ag cream brings out Ag Ion transfer by carrying out ionization from the light of LED chip, therefore, Ag cream is not injected (namely in order to make the light from LED chip, for suppressing the generation of surface plasmons), although also consider the coating etc. implementing the light blocked from LED chip on Ag cream, it is extremely difficult for implementing coating etc. again after substrate is fixed in LED chip adhesion.
The utility model has used for reference above situation, and its object is to provides one not need to implement coating etc. on Ag cream, and simply to construct, the light-emitting device can installed to high-density while suppressing Ag Ion transfer and manufacture method thereof.
For solving the method for problem
For reaching above-mentioned purpose, light-emitting device of the present utility model possesses substrate; Drafting department, is formed at the surface of substrate and has conductivity; And LED (Light Emitting Diode) chip, be placed in the surface of drafting department, and shoot out the light of light emitting layer from exit facet; Wherein, on the surface of drafting department, be formed with the 1st recess, it has 1st peristome more bigger than the exit facet of LED chip, and LED chip is accommodated in the 1st recess, and is engaged in the bottom surface of the 1st recess via silver (Ag) cream.
According to this structure, even if a part for the ultraviolet light penetrated by LED chip returns as feedback light, the surrounding of LED chip and the surrounding of Mold binder are surrounded by the wall of the 1st recess only arranged across gap, therefore, base does not arrive the feedback light of Mold binder, inhibits the generation of Ag Ion transfer.Thus, be the problem removing Ag Ion transfer, do not need to take to guarantee this countermeasure of enough insulation distances between Ag cream and each electrode of LED chip be adjacent and wire bonds, just to high-density LED chip can be installed.
In addition, exit facet and the 1st peristome of preferred LED chip are rectangle, construct in the mode of each limit of the 1st peristome than each limit large 5 ~ 20% of the exit facet of LED chip.
In addition, preferably the degree of depth of the 1st recess is set to d, the distance from luminescent layer to the bottom surface of the 1st recess is set to t1, when the thickness of Mold binder is set to t2, meets t2<d<t1.
In addition, can construct as follows: be formed with the 2nd recess with 2nd peristome more bigger than the 1st peristome on the surface of substrate, and the 1st recess is formed at the 2nd recess inside.
In addition, preferably in the 1st gap between recess and LED chip, at least in the wavelength region may of the light penetrated from LED chip, the low light-blocking member of transmitance is provided with.
In addition, can construct as follows: also possess the edge part be formed as from the 1st peristome and give prominence to towards LED chip, the light-blocking member of at least shading in the wavelength region may of light.In addition, in this case, light-blocking member can be configured to be integrally formed with drafting department.
In addition, can construct as follows: be formed with the 3rd recess with 3rd peristome more smaller than the exit facet of LED chip in the bottom surface of the 1st recess, Mold binder is accommodated in the 3rd recess.According to this structure, can positively prevent feedback light from arriving Mold binder, therefore, it is possible to positively suppress the generation of Ag Ion transfer.
In addition, can construct as follows: LED chip has cathode terminal and anode terminal in exit facet side, substrate is the metal substrate with conductivity, and drafting department and metal substrate are integrally formed.
In addition, can construct as follows: LED chip has cathode terminal and anode terminal in exit facet side, and substrate has insulating properties.
In addition, can construct as follows: LED chip has any one in cathode terminal or anode terminal in exit facet side, have any another one at the bottom surface side of the 1st recess, substrate has insulating properties.
In addition, can construct as follows: LED chip has any one in cathode terminal or anode terminal in exit facet side, have any another one at the bottom surface side of the 1st recess, substrate is the metal substrate with conductivity, metal substrate has insulating barrier, and is electrically insulated between drafting department
In addition, the light preferably penetrated by LED chip comprises the light of ultraviolet wavelengths.
In addition, from the view point of other, light-emitting device of the present utility model
Possess: substrate; Drafting department, is formed at the surface of substrate and has conductivity; LED (Light Emitting Diode) chip, is placed in the surface of drafting department, and shoots out the light of light emitting layer from exit facet; Wherein, be formed with the 1st recess on the surface of drafting department, it has the peristome more smaller than the exit facet of LED chip; LED chip is via being filled in the 1st recess, and silver (Ag) cream is engaged in drafting department.
According to this structure, even if return as feedback light from a part for the ultraviolet light of LED outgoing, also can not arrive Mold binder, positively can suppress the generation of Ag Ion transfer.
The effect of utility model
As mentioned above, according to the utility model, can realize unreally on Ag cream applying cloth etc., and simply to construct, while suppression Ag Ion transfer, the light-emitting device that can install to high-density.
Accompanying drawing explanation
Fig. 1 is the plane graph of the light-emitting device relating to execution mode of the present utility model.
Fig. 2 is the amplification profile in the A portion of Fig. 1.
Fig. 3 illustrates to relate to the LED chip of the light-emitting device of execution mode of the present utility model and the graph of a relation of recess.
Fig. 4 illustrates the flow chart relating to the manufacturing process of the light-emitting device of the 1st execution mode of the present utility model.
Fig. 5 is the profile of the light-emitting device relating to the 2nd execution mode of the present utility model.
Fig. 6 is the profile of the light-emitting device relating to the 3rd execution mode of the present utility model.
Fig. 7 is the profile of the light-emitting device relating to the 4th execution mode of the present utility model.
Fig. 8 is the profile of the light-emitting device relating to the 5th execution mode of the present utility model.
Fig. 9 is the profile of the light-emitting device relating to the 6th execution mode of the present utility model.
Figure 10 is the profile of the light-emitting device relating to the 7th execution mode of the present utility model.
Figure 11 is the profile of the light-emitting device relating to the 8th execution mode of the present utility model.
Figure 12 is the profile of the light-emitting device relating to the 9th execution mode of the present utility model.
Figure 13 is the profile of the light-emitting device relating to the 10th execution mode of the present utility model.
Figure 14 is the profile of the light-emitting device relating to the 11st execution mode of the present utility model.
Figure 15 is the profile of the light-emitting device relating to the 12nd execution mode of the present utility model.
Figure 16 is the profile of the light-emitting device relating to the 13rd execution mode of the present utility model.
In figure:
100,200,300,400,500,600,700,800,900,1000,1100,1200,1300 light-emitting devices
101,201,401,901,1001 substrates
102 positive terminals
103 negative terminals
110,910 LED chips
110a, 910a exit facet
110b, 910b cathode terminal
110c, 910c anode terminal
110d luminescent layer
112,412,1112,1212,1312 drafting departments
112a, 412a, 112aM, 1112a, 1212a, 1301a peristome (the 1st peristome)
112b, 412b, 112bM, 1112b, 1212b, 1301b peristome (the 1st recess)
112c, 412c, 112cM, 1212c par
114 wire bonds
116 Mold binders
201a insulating barrier
401a peristome (the 2nd peristome)
401b recess (the 2nd recess)
513,613 light screening materials
715 light-blocking members
1112c peristome (the 3rd peristome)
1112d recess (the 3rd recess)
1305 conductor portion.
Embodiment
Below, with reference to accompanying drawing, execution mode of the present utility model is described in detail.Moreover the symbol identical to portion markings identical or suitable in figure, is described no longer repeatedly.
1st execution mode
Fig. 1 is the plane graph of the light-emitting device 100 relating to the 1st execution mode of the present utility model.In addition, Fig. 2 is the amplification profile in the A portion of Fig. 1.The light-emitting device 100 of present embodiment, for being equipped on UV curing apparatus and sending the device of ultraviolet light, as shown in Figure 1, possesses multiple (in Fig. 1 being 10) LED chip 110 etc. on the substrate 101.
Substrate 101 is the so-called wiring substrate be made up of the base material with insulating properties.The base material with insulating properties refers to, such as, and pottery (aluminium nitride, aluminium oxide, silicon nitride, carborundum etc.).As shown in Figure 1, drafting department 112,1 positive terminal 102 and 1 negative terminal 103 of 10 rectangles be made up of the metal material with conductivity (such as, copper, aluminium) is formed on the surface of substrate 101.In addition, as shown in Figure 2, in the face center portion of the drafting department 112 of present embodiment, be formed with the recess 112b (the 1st recess) with the rectangular aperture portion 112a (1st peristome) more bigger than the exit facet 110a of LED chip 110, around recess 112b, (that is, the peripheral edge portion side on drafting department 112 surface) is formed with the par 112c for being solded into wire bonds 114.
LED chip 110 is in four prism type, and above, (that is, exit facet 110a) possesses cathode terminal 110b, possesses anode terminal 110c below.Further, if apply electric current between anode terminal 110c and cathode terminal 110b, then in luminescent layer 110d, produce ultraviolet light (such as, wavelength is the light of 385nm), and penetrate from exit facet 110a.In the present embodiment, LED chip 110 is accommodated in recess 112b, via below the bottom surface of Mold binder 116 coupling recess 112b and LED chip 110 (that is, anode terminal 110c).
Mold binder 116 is the parts for mechanicalness and electrical bonded LED chips 110 and drafting department 112, in the present embodiment, uses silver (Ag) cream with conductivity.
The cathode terminal 110b of each LED chip 110 connects the par 112c of the drafting department 112 engaging LED chip 110 of the side (right side in Fig. 1 and Fig. 2) being adjacent to LED chip 110 via wire bonds 114, adjacent LED chip 110 is connected link respectively.In addition, in Fig. 1, the drafting department 112 engaging LED chip 110 being positioned at the leftmost side via wire bonds 114 to be formed in connection in the positive terminal 102 of substrate 101, the cathode terminal 110b being positioned at the LED chip 110 of the rightmost side via wire bonds 114 to be formed in connection in the negative terminal 103 of substrate 101.Positive terminal 102 and negative terminal 103 are connected to not shown supply unit, between positive terminal 102 and negative terminal 103, electric current is applied by supply unit, thus, be connected in series in the multiple LED chips 110 between positive terminal 102 and negative terminal 103 and alive, penetrate ultraviolet light from each LED chip 110.Further, the ultraviolet light penetrated from each LED chip 110, by being configured at the not shown cover glass of the top (that is, in light path) of LED chip 110, irradiates to irradiation object thing (not diagram).
As mentioned above, the ultraviolet light penetrated from each LED chip 110 of present embodiment passes through cover glass, arrives irradiation object thing, but when there is ultraviolet light by cover glass, wherein a part passes through the plane of incidence and the exit facet reflection of cover glass, thus returns the problem of LED chip 110 side.In addition, also there is the ultraviolet light penetrated from each LED chip 110 and reflected by irradiation object thing, and return the problem of LED chip 110 side.As mentioned above, if the ultraviolet light penetrated from each LED chip 110 returns to LED chip 110 side (following, to be called " feedback light " by the light returning to LED chip 110 side), then feedback light injects Mold binder 116, the Ag ionization contained in Mold binder 116, brings out Ag Ion transfer.Therefore, in the present embodiment, for suppressing feedback light to inject Mold binder, recess 112b is formed in the mode of surrounding around LED chip 110.
Fig. 3 is the magnified partial view of Fig. 2, for the figure of the relation of LED chip 110 and recess 112b is described.As shown in Figure 3, the LED chip 110 of present embodiment above and below in length be the square of a1 (such as, about 1,000 μm), the length of peristome 112a in one side of recess 112b is the square of a2.Further, peristome 112a length a2 than LED chip 110 length a1 bigger, in the present embodiment, consider the tolerance of size of LED chip 110, set in the mode of the length a1 on the one side relative to LED chip 110 large 5 ~ 20%.Moreover, reduce because gap between LED chip 110 and recess 112b is more and more narrow towards the feedback light of Mold binder 116 through the gap LED chip 110 and recess 112b, therefore preferably peristome 112a length a2 set in the mode of the length a1 on the one side relative to LED chip 110 large 5 ~ 10%.
In addition, in the present embodiment, the ultraviolet light carrying out light emitting layer 110d is from (when having so-called " lateral emitting ") when the side injection of LED chip 110, gap between LED chip 110 and recess 112b is entered in order to suppress this ultraviolet light, and inject Mold binder 16, therefore, par 112c is higher than Mold binder 116 to be positioned at, and the mode of the position lower than luminescent layer 110d constructs.That is, construct as follows: the degree of depth of recess 112b is set to d, the luminescent layer 110d of LED chip 110 is set to t1 to the distance of the bottom surface of recess 112b, time the thickness of Mold binder 116 is set to t2, meets following formula (1).
t2<d<t1…(1)
As mentioned above, when meeting formula (1), because (namely luminescent layer 110d is configured at the outside of recess 112b, the upside of par 112c), by the ultraviolet light of luminescent layer 110d luminescence probably all towards be configured at LED chip 110 top irradiation object thing (not diagram) and penetrate.And, described above from a part for the ultraviolet light of LED chip 110 injection, launch by irradiation object thing etc. and return, but the surrounding of the surrounding of LED chip 110 and Mold binder 116 is surrounded by the recess 112b only arranged across gap, therefore substantially do not exist through the feedback light of the gap LED chip 110 and recess 112b towards Mold binder 116, the generation of Ag Ion transfer can be suppressed.As mentioned above, the recess 112b of present embodiment plays a role as a kind of light-blocking member blocked towards the feedback light of Mold binder, therefore suppresses Ag Ion transfer.Thus, structure according to the present embodiment, as as described in the past, for eliminating Ag Ion transfer, without the need to take Mold binder 116 and the LED chip be adjacent each electrode (namely, cathode terminal 110b and anode terminal 110c) and wire bonds 114 between guarantee this countermeasure of enough insulation distances, just on the substrate 101 LED chip 110 can be installed to high-density.
The manufacture method of light-emitting device 100
Then, the manufacture method of the light-emitting device 100 of present embodiment is illustrated.Fig. 4 is the flow chart of the manufacturing process of the light-emitting device 100 that present embodiment is described.
Drafting department formation process
First, prepare the substrate 101 being cut into given size, form drafting department 112 on its surface by well-known gold-plated method, thick film, membrane process, DBC (Direct Bonded Copper), AMC (Active Brazed Copper).Form drafting department 112.
Recess formation process
Then, by well-known etching, sandblasting, machining etc., the face center of drafting department 112 is cut, form recess 112b.Moreover, as other execution mode, also the surrounding (that is, par 112c) of the recess 112b of drafting department 112 can be grown by well-known mask plating, evaporation, sputtering, silk screen printing etc., form recess 112b at the central portion of drafting department 112.
Mold binder painting process
Then, in the approximate center portion of the bottom surface of recess 112b, distributor and transfer printing pin is used, the Mold binder 116 of coating ormal weight.
Bonding process
Then, use chip join and mount pad etc., in the approximate center portion of recess 112b, LED chip 110 is installed, by below Mold binder the bonded LED chips 110 and bottom surface of recess 112b.
Wire adhesion operation
And then, finally, use wire bonds etc., the par 112c of the drafting department 112 that the cathode terminal 110b connecting each LED chip 110 by wire bonds 114 and the LED chip 110 adjoined engage, in Fig. 1, the drafting department 112 that the LED chip 110 that is positioned at the leftmost side engages is connected by wire bonds 114, with the positive terminal 102 being formed at substrate 101, the cathode terminal 110b being positioned at the LED chip 110 of the rightmost side is connected by wire bonds 114, with the negative terminal 103 being formed at substrate 101, and then complete the light-emitting device 100 of present embodiment.
Though be the explanation of execution mode of the present utility model above, the utility model is not limited to the structure of above-mentioned execution mode, various deformation can be had within the scope of its technical though.
Such as, in the present embodiment, LED chip 110 above and be square below, in addition, the peristome 112a of recess 112b is also square, but the shape of the peristome 112a of recess 112b be preferably to LED chip 110 above and shape similar below, in this case, preferably with (that is, the profile) large 5 ~ 20% above and below relative to LED chip 110, preferably the mode of large 5 ~ 10% sets the peristome 112b of recess 112b.
In addition, in the present embodiment, though LED chip 110 is that the parts of the light of 385nm are illustrated as sending wavelength, also for sending the parts of the light of other UV light region wavelength, can also can be the parts of the light of the wavelength sending viewing area or region of ultra-red.
2nd execution mode
Fig. 5 is the profile of the light-emitting device 200 relating to the 2nd execution mode of the present utility model.The substrate 201 of the light-emitting device 200 of present embodiment is by having base material (metal substrate of such as copper and the aluminium etc.) structure of conductivity, on the surface of substrate 201 (namely, between substrate 201 and drafting department 112) be formed with the insulating barrier 201a with insulating properties, this point is different from the light-emitting device 100 of the 1st execution mode.
The metal substrate of the substrate 201 as present embodiment applicable such as copper and aluminium etc., as insulating barrier 201a, can use such as SiO
2, Al
2o
3, TiO
2, ZrO
2, ZnO
2, Nb
2o
5, MgO, TaO
2, HfO, Y
2o
3deng oxide and the fluoride such as nitride, MgF2 of SiN, AlN, AlON etc. be the film of main component, and pottery, glass epoxide, polyimides, PEEK (polyetheretherketone), You Nilai top grade resin.The insulating barrier 201a of present embodiment, before drafting department formation process, carries out film forming (formation) operation by sputtering, vapour deposition method etc.
As mentioned above, if form the insulating barrier 201a with insulating properties between substrate 201 and drafting department 112, then making the substrate 201 with conductivity be applicable to the utility model becomes possibility.Moreover effectively conduct to substrate 201 from the view point of by the heat produced by LED chip 110, the material structure insulating barrier 201a preferably using pyroconductivity high, comparatively unfertile land structure etc., can reduce the resistance to heat of insulating barrier 201a.
3rd execution mode
Fig. 6 is the profile of the light-emitting device 300 relating to the 3rd execution mode of the present utility model.The insulating barrier 201a part of the light-emitting device 300 of present embodiment is formed at the surface (that is, only immediately below drafting department 112) of substrate 201, and this point is different from the light-emitting device 200 of the 2nd execution mode.
As mentioned above, even if be only formed at by insulating barrier immediately below drafting department 112, identical with the 2nd execution mode, making the substrate 201 with conductivity be applicable to the utility model becomes possibility.
4th execution mode
Fig. 7 is the profile of the light-emitting device 400 relating to the 4th execution mode of the present utility model.The light-emitting device 400 of present embodiment is formed with the recess 401b (the 2nd recess) of rectangle on the surface of substrate 401, and forms drafting department 412 in the mode covering recess 401b, and this point is different from the light-emitting device 100 of the 1st execution mode.
As shown in Figure 7, the film that the drafting department 412 of present embodiment is roughly the same by the thickness in recess 412b (the 1st recess) and the thickness in the 412c of par is formed, the recess 401b of substrate 401 has the peristome 401a (2nd peristome) more bigger than the peristome 412a (the 1st peristome) of the recess 412b being formed at drafting department 412, and recess 412b is formed at the inside of recess 401b.Moreover the recess 401b of present embodiment passed through the formation such as sandblasting, laser processing before drafting department formation process.In addition, as other execution mode, as shown in the 2nd and the 3rd execution mode, also can by there is the base material of conductivity (such as, the metal substrate such as copper and aluminium) construct substrate 401, between substrate 401 and drafting department 412, form the structure of insulating barrier.
As mentioned above, even if the structure for making the surface of the surface of substrate 401 and drafting department 412 cave in, as long as meet above-mentioned formula (1), then identical with the 1st execution mode, the generation of Ag Ion transfer can be suppressed.
5th execution mode
Fig. 8 is the profile of the light-emitting device 500 relating to the 5th execution mode of the present utility model.The light screening material 513 (light-blocking member) that the transmitance of the gap filling ultraviolet light of light-emitting device 500 between LED chip 110 and recess 112b of present embodiment is low, this point is different from the light-emitting device 100 of the 1st execution mode.
As light screening material 513, be suitable for the material with mobility, such as, fluororesin, organic siliconresin, UV hardening resin, solder, aluminium etc. can be used.In addition, the also applicable material of additive containing absorbing ultraviolet light, or fluororesin, organic siliconresin, the UV hardening resin of the material of additive containing light reflection ultraviolet.Moreover the light screening material 513 of present embodiment is filled in the gap between LED chip 110 and recess 112b after bonding process.
As mentioned above, if the gap filling light screening material between LED chip 110 and recess 112b, then feedback light is absorbed by light screening material 513, does not therefore substantially arrive the feedback light of Mold binder, and then can suppress the generation of Ag Ion transfer.
6th execution mode
Fig. 9 is the profile of the light-emitting device 600 relating to the 6th execution mode of the present utility model.The light screening material 613 (light-blocking member) that the transmitance of the gap filling ultraviolet light of light-emitting device 600 between LED chip 110 and recess 412b of present embodiment is low, this point is different from the light-emitting device 100 of the 4th execution mode.
As mentioned above, in the light-emitting device 400 of the 4th execution mode, identical with the 5th execution mode, by the light screening material 613 that the transmitance of the gap filling ultraviolet light between LED chip 110 and recess 412b is low, and then the generation of Ag Ion transfer can be suppressed.
The execution mode of the 7th
Figure 10 is the profile of the light-emitting device 700 relating to the 7th execution mode of the present utility model.The light-emitting device 700 of present embodiment is provided with the tabular light-blocking member 715 (light-blocking member) extended from the par 112c of drafting department 112 to LED chip 110, and this point is different from the light-emitting device 100 of the 1st execution mode.
As light-blocking member 715, be suitable for the material with uv-resistance, such as, Teflon (registered trade mark) resin, polyimides, PEEK, ultraviolet can be used to remove the stained glass, plate-shape metal (such as, aluminium, copper, stainless steel) etc. of glass, ND filter etc.Moreover, the light-blocking member 715 of present embodiment is after bonding process, configure in the mode filling in the gap between LED chip 110 and recess 112b (that is, peristome 112a), and be bonded on the 112c of par by solder and thermal endurance sticker etc.
As mentioned above, if to fill in LED chip 110 and recess 112b (namely, peristome 112a) between the mode in gap configure light-blocking member 715, then identical with the 5th and the 6th execution mode, feedback light is blocked by light-blocking member 715, therefore substantially do not arrive the feedback light of Mold binder 116, and then the generation of Ag Ion transfer can be suppressed.
8th execution mode
Figure 11 is the light-emitting device 800 relating to the 8th execution mode of the present utility model.The light-emitting device 800 of present embodiment forms recess 112bM with the par 112cM of drafting department 112 towards the outstanding mode of LED chip 110 (that is, peristome 112aM narrow mode), and this point is different from the light-emitting device 100 of the 1st execution mode.
As mentioned above, if construct towards the mode that LED chip 110 is outstanding with the par 112cM of drafting department 112, par 112cM plays a role as a kind of light-blocking member, therefore, identical with the 7th execution mode, substantially do not arrive the feedback light of Mold binder 116, and then the generation of Ag Ion transfer can be suppressed.
9th execution mode
Figure 12 is the profile of the light-emitting device 900 relating to the 9th execution mode of the present utility model.The substrate 901 of the light-emitting device 900 of present embodiment is by having the base material of conductivity (such as, the metal substrate such as copper and aluminium) form, the drafting department 112 with conductivity is integrally formed with substrate 901, and this point is different from the light-emitting device 100 of the 1st execution mode.In addition, LED chip 901, above, (that is, exit facet 910a) possesses cathode terminal 901b and anode terminal 901c, and this point is different from the light-emitting device of the 1st execution mode.
The LED chip 910 of present embodiment is in the insulative substrate through ultraviolet light (such as, sapphire substrate) the LED chip that formed of the epitaxial loayer of surface crystallization growing GaN etc., on LED chip 910, be formed with cathode terminal 910b and anode terminal 910c.In addition, below LED chip 910 for having the sapphire substrate of insulating properties.The cathode terminal 910b of each LED chip 910 is connected via the anode terminal 910c of LED chip 910 of wire bonds 114 with the side (right side in Figure 12) being adjacent to LED chip 910, and adjacent LED chip 910 is connected in series respectively.
As mentioned above, use and there is the substrate 901 of conductivity, also the LED chip 910 that above (that is, exit facet 910a) has cathode terminal 910b and an anode terminal 910c can be applicable to the utility model.Moreover in the present embodiment, wire bonds 114 is not attached to drafting department 112, therefore, although drafting department 112 electrically floats, drafting department 112 and substrate 901 are integrally formed, and play a role as the heat-conduction component heat produced by LED chip 910 being conducted to effectively substrate 901.
10th execution mode
Figure 13 is the profile of the light-emitting device 1000 relating to the 10th execution mode of the present utility model.The substrate of the light-emitting device 1000 of present embodiment is by having the base material of conductivity (such as, the metal substrate such as copper and aluminium) form, and (namely substrate 1001 is formed in the mode having drafting department 412 concurrently, substrate 1001 and drafting department 412 are integrally formed), this point is different from the light-emitting device 400 of the 4th execution mode.In addition, identical with the 9th execution mode, above, (that is, exit facet 910a) possesses cathode terminal 910b and anode terminal 910c to LED chip 910, and this point is different from the light-emitting device 400 of the 4th execution mode.
As mentioned above, by using the substrate 1001 that formed in the mode having drafting department 412 concurrently, also the LED chip 910 that above (that is, exit facet 910a) has cathode terminal 910b and an anode terminal 910c can be applicable to the utility model.Moreover, in the present embodiment, identical with the 9th execution mode, (namely wire bonds 114 is not attached to drafting department 412, substrate 1001), therefore, although drafting department 412 is electrically floating, but drafting department 412 and substrate 1001 are integrally formed, therefore, it is possible to the heat conduction effectively produced by LED chip is to substrate 1001.
11st execution mode
Figure 14 is the profile of the light-emitting device 1100 relating to the 11st execution mode of the present utility model.The light-emitting device 1100 of present embodiment is formed with the recess 1112d (the 3rd recess) of the peristome 1112c (the 3rd peristome) with the rectangle more smaller than the exit facet 110a of LED chip 110 in the bottom surface of the recess 1112b (the 1st recess) of drafting department 1112, Mold binder 116 is accommodated in recess 1112d, and this point is different from the light-emitting device 100 of the 1st execution mode.
According to structure as above, even if suppose that feedback light is by the gap between LED chip 110 and recess 1112b, can not arrive Mold binder 116, can positively suppress Ag Ion transfer.Moreover recess 1112d before Mold binder painting process, can be formed by carrying out well-known etching, sandblasting, machining etc.
12nd execution mode
Figure 15 is the profile of the light-emitting device 1200 relating to the 12nd execution mode of the present utility model.The rectangular aperture portion 1212a (the 1st peristome) of the drafting department 1212 of the light-emitting device 1200 of present embodiment is formed as less than the exit facet of LED chip 110, and this point is different from the light-emitting device 100 of the 1st execution mode.
As shown in figure 15, in the present embodiment, the rectangular aperture portion 1212a (the 1st peristome) of drafting department 1212 is less than the exit facet 110a of LED chip 110, recess 1212b (the 1st recess) is storage Mold binder 116 only, to be connected to the state set of par 1212c below LED chip 110.
According to structure as above, identical with the 11st execution mode, can positively prevent feedback light from injecting Mold binder 116, therefore, it is possible to positively suppress the generation of Ag Ion transfer.
13rd execution mode
Figure 16 is the profile of the light-emitting device 1300 relating to the 13rd execution mode of the present utility model.The light-emitting device 1300 of present embodiment is formed with the recess 1301b with the rectangular aperture portion 1301a more bigger than LED chip 110 on the surface of substrate 1301, drafting department 1312 is only formed at the bottom surface of recess 1301b, and this point is different from the light-emitting device 100 of the 1st execution mode.In addition, on substrate 1301, to be formed in the inside of substrate 1301 from the surface of substrate 1301 to drafting department 1312 with the conductor portion 1305 that L-shaped extends, this point is different from the light-emitting device 100 of the 1st execution mode.
The substrate 1301 of present embodiment is identical with the 1st execution mode, for having the wiring substrate of insulating properties,, there are the conductive materials such as solder in the hole that conductor portion 1305 extends with L-shaped through the wall from the surface of substrate 1301 to recess 1301b to be formed by circulation in this hole.Further, drafting department 1312 is formed at the bottom surface of recess 1301b by mask plating etc. in the mode be electrically connected with conductor portion 1305.Moreover as other execution mode, conductor portion 1305 is formed preferably by being inserted in substrate 1301 by path.In addition, if by multilayer laminated base plate structure substrate 1301, then conductor portion 1305 can be formed by the combination of the Wiring pattern of multilayer laminated substrate and path.
In the present embodiment, LED chip 110 is accommodated in recess 1301b, and below drafting department 1312 and LED chip 110, (that is, anode terminal 110c) engages via Mold binder.And, the conductor portion 1305 that the cathode terminal 110b of each LED chip 110 is electrically connected via wire bonds 114 and the LED chip 110 of the side (right side of Figure 16) being adjacent to LED chip 110 is connected, identical with the 1st execution mode, adjacent LED chip is connected in series respectively.
As mentioned above, the surrounding of the LED chip of present embodiment and the surrounding of Mold binder 116 are surrounded by the wall being arranged at the recess 1301b of substrate 1301.Thus, identical with the 1st execution mode, substantially not through the feedback light of the gap LED chip 110 and recess 1301b towards Mold binder 116, the generation of Ag Ion transfer can be suppressed.
Moreover this time disclosed execution mode is the example of all aspects, should think and be not limited thereto.Scope of the present utility model is not limited to above-mentioned explanation, also comprises according to claim, and that can expect comprises and the whole change in claim equivalence and scope and replacement.
Claims (19)
1. a light-emitting device, is characterized in that, possesses:
Substrate;
Drafting department, is formed at the surface of described substrate and has conductivity; And
LED chip, is placed in the surface of described drafting department, and shoots out the light of light emitting layer from exit facet;
Wherein, on the surface of described drafting department, be formed with the 1st recess, it has the 1st peristome adapted with the exit facet of described LED chip,
Described LED chip is accommodated in described 1st recess, and is engaged in the bottom surface of described 1st recess via silver (Ag) cream.
2. light-emitting device according to claim 1, is characterized in that,
Exit facet and described 1st peristome of described LED chip are rectangle, and each limit of described 1st peristome is than each limit large 5 ~ 20% of the exit facet of described LED chip.
3. the light-emitting device according to claims 1 or 2, is characterized in that,
The degree of depth of described 1st recess is set to d, is set to t1 by from described luminescent layer to the distance of described 1st recess bottom surface, when the film thickness of described Mold binder is set to t2, meet t2 < d < t1.
4. the light-emitting device according to any one of claims 1 or 2, is characterized in that,
Be formed with the 2nd recess on the surface of substrate, it has the 2nd peristome adapted with described 1st peristome,
Described 1st recess is formed at the inside of the 2nd recess.
5. the light-emitting device according to any one of claims 1 or 2, is characterized in that,
In gap between described 1st recess and described LED chip, at least in the wavelength region may of described light, be provided with the low light-blocking member of light transmittance.
6. the light-emitting device according to any one of claims 1 or 2, is characterized in that,
Also possess light-blocking member, formed in the mode outstanding to described LED chip from the edge part of described 1st peristome, and at least in the wavelength region may of described light, block described light.
7. light-emitting device according to claim 6, is characterized in that,
Described light-blocking member and described drafting department are integrally formed.
8. the light-emitting device according to any one of claims 1 or 2, is characterized in that,
In the bottom surface of described 1st recess, be formed with the 3rd recess, it has 3rd peristome less than the exit facet of described LED chip,
Described Mold binder is accommodated in described 3rd recess.
9. the light-emitting device according to any one of claims 1 or 2, is characterized in that,
Described LED chip has cathode terminal and anode terminal in described exit facet side,
Described substrate is the metal substrate with conductivity,
Described drafting department and described metal substrate are integrally formed.
10. the light-emitting device according to any one of claims 1 or 2, is characterized in that,
Described LED chip has cathode terminal and anode terminal in described exit facet side,
Described substrate has insulating properties.
11. light-emitting devices according to any one of claims 1 or 2, is characterized in that,
Described LED chip has any one in cathode terminal or anode terminal in exit facet side, has any another one at the bottom surface side of described 1st recess,
Described substrate has insulating properties.
12. light-emitting devices according to any one of claims 1 or 2, is characterized in that,
Described LED chip has any one in cathode terminal or anode terminal in exit facet side, has any another one at the bottom surface side of described 1st recess,
Described substrate is the metal substrate with conductivity,
Described metal substrate has insulating barrier, and is electrically insulated between described drafting department.
13. light-emitting devices according to any one of claims 1 or 2, is characterized in that,
The light penetrated by described LED chip comprises the light of ultraviolet wavelengths.
14. 1 kinds of light-emitting devices, is characterized in that possessing:
Substrate;
Drafting department, is formed at the surface of described substrate and has conductivity;
LED chip, is placed in the surface of described drafting department, and shoots out the light of light emitting layer from exit facet;
Wherein, be formed with the 1st recess on the surface of described drafting department, it has the peristome less than the exit facet of described LED chip;
Described LED chip is via being filled in described 1st recess, and silver (Ag) cream is engaged in described drafting department.
15. light-emitting devices according to claim 14, is characterized in that,
Described LED chip has cathode terminal and anode terminal in described exit facet side,
Described substrate is the metal substrate with conductivity,
Described drafting department and described metal substrate are integrally formed.
16. light-emitting devices according to claim 14, is characterized in that,
Described LED chip has cathode terminal and anode terminal in exit facet side,
Described substrate has insulating properties.
17. light-emitting devices according to claim 14, is characterized in that,
Described LED chip has any one in cathode terminal or anode terminal in exit facet side, has any another one at the bottom surface side of described 1st recess,
Described substrate has insulating properties.
18. light-emitting devices according to claim 14, is characterized in that,
Described LED chip has any one in cathode terminal or anode terminal in exit facet side, has any another one at the bottom surface side of described 1st recess,
Described substrate is the metal substrate with conductivity,
Described metal substrate has insulating barrier, and is electrically insulated between described drafting department.
19. light-emitting devices according to any one of claim 14 ~ 18, is characterized in that,
The light penetrated by described LED chip comprises the light of ultraviolet wavelengths.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014019857A JP6139427B2 (en) | 2014-02-04 | 2014-02-04 | Light emitting device and manufacturing method thereof |
| JP2014-019857 | 2014-02-04 |
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| CN204706583U true CN204706583U (en) | 2015-10-14 |
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| CN201510057365.2A Expired - Fee Related CN104821359B (en) | 2014-02-04 | 2015-02-04 | Light emitting device and its manufacturing method |
| CN201520078016.4U Expired - Fee Related CN204706583U (en) | 2014-02-04 | 2015-02-04 | Light-emitting device |
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| JP (1) | JP6139427B2 (en) |
| KR (1) | KR101917875B1 (en) |
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| JP6411572B1 (en) * | 2017-03-29 | 2018-10-24 | Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 | Light emitting device and light irradiation device including the light emitting device |
| JP7403944B2 (en) * | 2018-05-30 | 2023-12-25 | シーシーエス株式会社 | LED light emitting device |
| EP3879566A4 (en) * | 2018-11-26 | 2021-12-01 | Huawei Technologies Co., Ltd. | Packaging structure and communication device |
| CN109859629A (en) * | 2018-12-28 | 2019-06-07 | 清华大学深圳研究生院 | A kind of flexible LED display film |
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| JPS5066189A (en) * | 1973-10-12 | 1975-06-04 | ||
| JPS60261181A (en) * | 1984-06-07 | 1985-12-24 | Toshiba Corp | Semiconductor device |
| JP3242438B2 (en) * | 1992-03-17 | 2001-12-25 | 沖電気工業株式会社 | Light emitting semiconductor device |
| JP3775480B2 (en) * | 2001-03-13 | 2006-05-17 | セイコーエプソン株式会社 | Manufacturing method of optical module |
| JP2005150408A (en) | 2003-11-17 | 2005-06-09 | Sumitomo Electric Ind Ltd | Light source apparatus and package for mounting light emitting element |
| JP3905078B2 (en) * | 2003-12-08 | 2007-04-18 | 京セラ株式会社 | Light emitting device |
| JP2006093672A (en) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | Semiconductor light emitting device |
| TWI239670B (en) * | 2004-12-29 | 2005-09-11 | Ind Tech Res Inst | Package structure of light emitting diode and its manufacture method |
| JP4789672B2 (en) | 2006-03-29 | 2011-10-12 | 京セラ株式会社 | Light emitting device and lighting device |
| JP2009026991A (en) * | 2007-07-20 | 2009-02-05 | Citizen Electronics Co Ltd | Light-emitting diode |
| KR101438826B1 (en) * | 2008-06-23 | 2014-09-05 | 엘지이노텍 주식회사 | Light emitting device |
| TWI389295B (en) * | 2009-02-18 | 2013-03-11 | Chi Mei Lighting Tech Corp | Light-emitting diode light source module |
| JP2010267910A (en) * | 2009-05-18 | 2010-11-25 | Citizen Electronics Co Ltd | Light emitting diode |
| TW201205882A (en) * | 2010-07-16 | 2012-02-01 | Foxsemicon Integrated Tech Inc | Manufacturing method for LED light emitting device |
| CN202049996U (en) * | 2011-04-25 | 2011-11-23 | 刘振亮 | Support structure for enhancing single-electrode LED chip package conductivity |
| JP2013062337A (en) * | 2011-09-13 | 2013-04-04 | Toshiba Corp | Light-emitting device |
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2014
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2015
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| Publication number | Publication date |
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| JP6139427B2 (en) | 2017-05-31 |
| KR20150092004A (en) | 2015-08-12 |
| JP2015149321A (en) | 2015-08-20 |
| CN104821359B (en) | 2019-01-01 |
| CN104821359A (en) | 2015-08-05 |
| KR101917875B1 (en) | 2018-11-13 |
| TW201532320A (en) | 2015-08-16 |
| TWI609510B (en) | 2017-12-21 |
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