KR20150007734A - Light emitting device - Google Patents

Abstract

To improve light emitting efficiency, a light emitting device according to an embodiment includes: a light emitting structure which includes a support member, a second electrode layer arranged on the support member, a first semiconductor layer arranged on the second electrode layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; an interlayer dielectric which is arranged between the second electrode layer and the first semiconductor layer and insulates the second electrode layer and the first semiconductor layer; a connection electrode which electrically connects the plural regions of the second electrode layer and the plural regions of the second semiconductor layer; and a first electrode layer which is electrically connected to the first semiconductor layer. The interlayer dielectric may include a first insulating layer having at least compressive stress and a second insulating layer having tensile stress.

Description

[0001]

An embodiment relates to a light emitting element.

As a typical example of a light emitting device, a light emitting diode (LED) is a device for converting an electric signal into an infrared ray, a visible ray, or a light using the characteristics of a compound semiconductor, and is used for various devices such as household appliances, remote controllers, Automation equipment, and the like, and the use area of LEDs is gradually widening.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

(MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam growth (MBE) When a light emitting structure is grown by a method such as epitaxy, hydride vapor phase epitaxy (HVPE), or sputtering, a light emitting structure is subjected to a bending stress due to a difference in physical properties or lattice constant of the semiconductor material (Bending stress) or strain (strain) is generated.

The above-described bending stress or strain can be mitigated by forming a buffer layer between the growth substrate and the light emitting structure.

However, since the buffer layer is formed of a semiconductor material, there is a problem that bending stress or strain of the semiconductor material is difficult to mitigate.

Further, when the buffer layer is formed thick, the quality of the light emitting structure is deteriorated.

In addition, when the growth substrate is later removed from the light emitting device and the supporting member is bonded, the bending stress or strain remains in the light emitting structure, so that the bending stress or the bending stress There is a problem that a strain is formed.

Embodiments provide a light emitting device that alleviates bending stress or strain generated in a light emitting structure and improves light emitting efficiency.

A light emitting device according to an embodiment includes a support member, a second electrode layer disposed on the support member, a first semiconductor layer disposed on the second electrode layer, a second semiconductor layer, An interlayer insulating film which is disposed between the second electrode layer and the first semiconductor layer and insulates the second electrode layer from the first semiconductor layer; And a first electrode layer electrically connected to the first semiconductor layer, wherein the interlayer insulating layer is formed to have at least a compressive stress A first insulating layer, and a second insulating layer having a tensile stress.

The light emitting device according to the embodiment has the effect of relieving the bending stress generated in the light emitting structure from which the growth substrate is removed.

Further, the interlayer insulating film includes a first insulating layer having a compressive stress and a second insulating layer having a tensile stress, thereby reducing warping of the supporting member and the light emitting structure.

In addition, the warpage of the support member and the light emitting structure is alleviated, and wavelength conversion of light generated in the active layer is prevented, and uniformity of the manufacturing process of the light emitting device can be secured.

Further, it has the effect of accelerating the current diffusion of the second semiconductor layer through the plurality of connection electrodes and improving the luminous efficiency of the light emitting element.

1 is a plan view showing a light emitting device according to an embodiment of the present invention,
FIG. 2 is a cross-sectional view taken along line AA of the light emitting device of FIG. 1,
3 is a cross-sectional view according to another embodiment of the present invention;
4 to 6 are flowcharts showing a method of manufacturing the embodiment of FIG. 1,
7 is a perspective view of a light emitting device package including a light emitting device according to an embodiment,
8 is a sectional view of a light emitting device package including the light emitting device according to the embodiment,
9 is an exploded perspective view of a display device including a light emitting device according to an embodiment,
10 is a sectional view of the display device of Fig. 9,
11 is an exploded perspective view of a lighting device including a light emitting device according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

FIG. 1 is a plan view of a light emitting device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line A-A of FIG.

1 and 2, the light emitting device 100 includes a support member 110, a second electrode layer 120 disposed on the support member 110, a light emitting structure disposed on the second electrode layer 120, An interlayer insulating film 130 disposed between the second electrode layer 120 and the first semiconductor layer 141 to isolate the second electrode layer 120 from the first semiconductor layer 141, And a first electrode layer 160 electrically connected to the first semiconductor layer 141. The first electrode layer 160 may include a connection electrode 121 electrically connecting a plurality of regions of the first semiconductor layer 145 to a plurality of regions of the second semiconductor layer 145,

The light emitting structure may include a first semiconductor layer 141, active layers 143 and 130, and a second semiconductor layer 150.

The support member 110 may be formed using a material having excellent thermal conductivity, or may be formed of a conductive material, and may be formed using a metal material or a conductive ceramic. The support member 110 may be formed of a single layer, and may be formed of a double structure or a multiple structure.

That is, the support member 110 may be formed of any one selected from a metal, for example, Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, and Cr, or may be formed of two or more alloys. The above materials can be laminated. In addition, the support member 110 may be implemented as a carrier wafer such as Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga 2 O 3.

The support member 110 facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100.

A second electrode layer 120 may be formed on the supporting member 110. The second electrode layer 120 may include an ohmic layer (not shown), a reflective layer (not shown), a bonding layer and a bonding layer (not shown). For example, the second electrode layer 120 may be a structure of an ohmic layer / a reflection layer / a bonding layer, a laminate structure of an ohmic layer / a reflection layer, or a structure of a reflection layer (including an ohmic layer) / a bonding layer. For example, the second electrode layer 120 may be formed by sequentially stacking a reflective layer and an ohmic layer.

The reflective layer (not shown) may be disposed between an ohmic layer (not shown) and an insulating layer (not shown), and may be formed of a material having excellent reflection characteristics, such as Ag, Ni, Al, Rh, Pd, , Zn, Pt, Au, Hf and combinations thereof, or may be formed using a metal material and a light-transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO or ATO have. Further, the reflective layer (not shown) can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like. In addition, when a reflective layer (not shown) is formed of a material that makes an ohmic contact with the light emitting structure (for example, the first semiconductor layer 141), an ohmic layer (not shown) may not be formed separately and is not limited thereto.

The ohmic layer (not shown) may be formed in a layer or a plurality of patterns. The ohmic layer (not shown) may be formed of a transparent electrode layer and a metal. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide) ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO _x , RuO _x , RuO _x / Ni, Ag, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO. The ohmic layer (not shown) is for facilitating the injection of carriers into the second semiconductor layer 145, and is not necessarily formed.

The second electrode layer 120 may include a bonding layer (not shown), wherein the bonding layer (not shown) may include a barrier metal or a bonding metal such as Ti, Au, Sn, Ni , Cr, Ga, In, Bi, Cu, Ag, or Ta.

The light emitting structure may include at least a first semiconductor layer 141, an active layer 143 and a second semiconductor layer 145 and may include an active layer 143 between the first semiconductor layer 141 and the second semiconductor layer 145 ) Can be configured as shown in Fig.

The first semiconductor layer 141 may be formed on the second electrode layer 120. A light emitting structure may be disposed on the second electrode layer 120, and an interlayer insulating layer 130 may be disposed between the second electrode layer 120 and the light emitting structure.

The first semiconductor layer 141 may be a p-type semiconductor layer doped with a p-type dopant. The p-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? x? 1, 0? y? 1, 0? x + y? 1), for example, GaN, AlN, AlGaN InGaN, InN, InAlGaN, AlInN and the like, and a p-type dopant such as Mg, Zn, Ca, Sr, and Ba can be doped.

Also, the first semiconductor layer 141 may be formed in a pattern in which a plurality of regions are removed. That is, a plurality of regions through which the connection electrode 121 passes may be removed from the first semiconductor layer 141.

The active layer 143 may be formed on the first semiconductor layer 141. The active layer 143 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

When the active layer 143 has a quantum well structure, for example, a well layer having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1) And a barrier layer having a composition formula of In _a Al _b Ga _1-ab N (0? A? ₁ , 0? B? ₁ , 0? A + b? 1). The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

For example, the active layer 143 of the multiple quantum well structure may be formed by repeatedly laminating InGaN and GaN, and may be formed by repeatedly laminating AlGaN and GaN. Here, depending on the type of the material forming the active layer 143, the emission wavelength generated by the combination of electrons and holes changes, so that it is preferable to control the semiconductor material included in the active layer 143 according to a target wavelength.

In addition, the active layer 143 may be formed in a pattern in which a plurality of regions are removed. That is, a plurality of regions through which the connection electrode 121 passes may be removed from the active layer 143.

A conductive clad layer (not shown) may be formed on and / or below the active layer 143. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer 143.

An intermediate layer (not shown) may be formed between the active layer 143 and the first semiconductor layer 141 and electrons injected from the second semiconductor layer 145 into the active layer 143 And may be an electron blocking layer for preventing the first semiconductor layer 141 from flowing to the first semiconductor layer 141 without being recombined in the active layer 143. Electrons injected from the second semiconductor layer 145 are injected into the first semiconductor layer 141 without recombination in the active layer 143 because the middle layer has a relatively larger bandgap than the active layer 143 The phenomenon can be prevented. Accordingly, the probability of recombination of electrons and holes in the active layer 143 can be increased and the leakage current can be prevented.

Meanwhile, the above-described intermediate layer may have a band gap larger than the band gap of the barrier layer included in the active layer 143, and may be formed of a semiconductor layer containing Al, such as p-type AlGaN, but is not limited thereto.

A second semiconductor layer 145 may be formed on the active layer 143. The second semiconductor layer 145 may be formed of an n-type semiconductor layer, and the n-type semiconductor layer may include, for example, In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? for example, Si, Ge, Sn, Se, Te, or the like can be selected from a semiconductor material having a composition formula of Si, Ge, Sn, Type dopant can be doped.

The first semiconductor layer 141 and the connection electrode 121 penetrating the active layer 143 are electrically connected to the lower portion of the second semiconductor layer 145.

The first semiconductor layer 141, the active layer 143 and the second semiconductor layer 145 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, , Plasma chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering And the present invention is not limited thereto.

The first electrode layer 160 is electrically connected to the first semiconductor layer 141. The arrangement of the first electrode layer 160 is not limited.

For example, the second semiconductor layer 145 and a part of the active layer 143 are removed, the upper surface of the first semiconductor layer 141 is exposed, and the upper surface of the first semiconductor layer 141 is exposed The electrode layer 160 may be positioned.

The first electrode layer 160 may be disposed in another region than the first semiconductor layer 141, but the present invention is not limited thereto.

The first electrode layer 160 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, , Mo, Nb, Al, Ni, Cu, and WTi.

On the other hand, the light emitting structure may include a third semiconductor layer (not shown) having a polarity opposite to that of the second semiconductor layer 145 on the second semiconductor layer 145. The first semiconductor layer 141 may be an n-type semiconductor layer and the second semiconductor layer 145 may be a p-type semiconductor layer. Accordingly, the light emitting structure may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

(Not shown) may be formed on the upper portion of the light emitting structure (for example, the upper surface of the second semiconductor layer 145).

The light extracting structure may be formed on the upper surface of the second semiconductor layer 145 or may be formed on a transparent electrode layer (not shown) after a transparent electrode layer (not shown) is formed on the upper portion of the light emitting structure. No.

The light extracting structure may be formed in a light transmitting electrode layer (not shown), or in a part or all of the upper surface of the second semiconductor layer 145. The light extracting structure may be formed by performing etching on at least one region of the light transmitting electrode layer (not shown), or the upper surface of the second semiconductor layer 145, but is not limited thereto. The etching process includes a wet etching process and / or a dry etching process. As the etching process is performed, the upper surface of the light-transmitting electrode layer (not shown) or the upper surface of the second semiconductor layer 145 includes a roughness can do. The roughness may be irregularly formed in a random size, but is not limited thereto. The roughness may be at least one of a texture pattern, a concave-convex pattern, and an uneven pattern, which is an uneven surface.

The roughness may be formed to have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, a polygonal pyramid, and the like, preferably including a horn shape.

Meanwhile, the light extracting structure may be formed by a method such as PEC (photoelectrochemical), but is not limited thereto. Light generated from the active layer 143 may be transmitted through the light-transmitting electrode layer (not shown) or the second semiconductor layer 145, as the light extracting structure 284 is formed on the upper surface of the light-transmitting electrode layer (not shown) Can be prevented from being totally reflected from the upper surface of the light emitting device 145 and reabsorbed or scattered, thereby contributing to improvement of light extraction efficiency of the light emitting device 100.

The interlayer insulating layer 130 is disposed between the second electrode layer 120 and the first semiconductor layer 141 to insulate the second electrode layer 120 from the first semiconductor layer 141. The interlayer insulating layer 130 serves to alleviate the bending stress generated in the light emitting structure from which the growth substrate is removed. In addition, the interlayer insulating layer 130 serves to relieve the stress applied to the supporting member 110 by the bending stress generated in the light emitting structure.

The interlayer insulating layer 130 may include an insulating material and includes at least a first insulating layer 131 having a compressive stress and a second insulating layer 133 having a tensile stress, . ≪ / RTI >

Here, a case where a force such as pushing one side of a layer from both sides is referred to as a compressive stress, and a case where a force acts in a pulling direction is referred to as a tensile stress.

The arrangement structure of the interlayer insulating film 130 is not limited. For example, the interlayer insulating layer 130 may have a structure in which the first insulating layer 131 and the second insulating layer 133 are alternately stacked. There is no limitation on the number of times of alternate lamination of the first insulating layer 131 and the second insulating layer 133, but three to six times are common.

The first insulating layer 131 may include an insulating material having a compressive stress and may include, for example, SiO _x (silicon oxide). here, The coefficient of oxygen (O) is not limited.

The method of forming the first insulating layer 131 is not limited, but it is usual to use, for example, chemical vapor deposition (CVD). In another example, it is preferable that the first insulating layer 131 is laminated with a thin film of silicon at 500 to 1000 degrees in an oxygen atmosphere.

The second insulating layer 133 may include an insulating material having a tensile stress, and may include, for example, Si _x N _y (silicon nitride). here, The coefficients of nitrogen (N) and silicon (Si) are not limited.

There is no limitation on the method of forming the second insulating layer 133, but it is usual to use, for example, chemical vapor deposition (CVD). In another example, it is preferable that the second insulating layer 133 is formed by laminating silicon in a thin film form at 500 to 1000 degrees in a nitrogen atmosphere.

The interlayer insulating layer 130 may have at least an area corresponding to the second electrode layer 120 and the first semiconductor layer 141. That is, the interlayer insulating layer 130 may have a structure in which the second electrode layer 120 and the first semiconductor layer 141 are stacked vertically (refer to FIG. 2).

The interlayer insulating layer 130 may have a pattern shape in which a plurality of regions through which the connection electrodes 121 pass are removed.

(MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam growth (MBE) When a light emitting structure is grown by a method such as epitaxy, hydride vapor phase epitaxy (HVPE), or sputtering, a light emitting structure is subjected to a bending stress due to a difference in physical properties or lattice constant of the semiconductor material (Bending stress) or strain (strain) is generated.

The above-described bending stress or strain can be mitigated by forming a buffer layer between the growth substrate and the light emitting structure.

However, since the buffer layer is formed of a semiconductor material, there is a problem that bending stress or strain of the semiconductor material is difficult to mitigate.

Further, when the buffer layer is formed thick, the quality of the light emitting structure is deteriorated.

Since the bending stress or strain described above remains in the light emitting structure when the growth substrate is later removed from the light emitting device 100 and the support member 110 is bonded to the support member 110 (Bending stress) or strain (strain) is formed on the surface of the substrate.

Therefore, if the interlayer insulating layer 130 includes the first insulating layer 131 having a compressive stress and the second insulating layer 133 having a tensile stress, the supporting member 110 and / It is possible to prevent warping of the light emitting structure.

It is also possible to prevent the support member 110 and the light emitting structure from being warped so as to prevent wavelength conversion of light generated in the active layer 143 and to ensure uniformity in the manufacturing process of the light emitting device 100 There is an advantage.

The connection electrode 121 electrically connects the plurality of regions of the second electrode layer 120 and the plurality of regions of the second semiconductor layer 145.

For example, one end of the connection electrode 121 is connected to the second semiconductor layer 145, and the other end of the connection electrode 121 is connected to the second electrode layer 120.

Specifically, the connection electrode 121 is formed through a predetermined region of the interlayer insulating film 130, the first semiconductor layer 141, and the active layer 143. That is, the connection electrode 121 penetrates a predetermined region of the interlayer insulating film 130, the first semiconductor layer 141, and the active layer 143, and the lower surface of the second semiconductor layer 145 and the second electrode layer 120 And can be arranged to connect the upper surfaces.

The connecting electrode 121 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Mo, Nb, Al, Ni, Cu, and WTi.

In addition, a sidewall insulating layer 150 may be further formed between the connection electrode 121 and the first semiconductor layer 141 and the active layer 143. The sidewall insulating film 150 may include an insulating material such as silicon nitride (SiN) or silicon oxide (SiO).

The sidewall insulating layer 150 may be formed to surround the outer surface of the connection electrode 121 so that the connection electrode 121 and the first semiconductor layer 141 and the active layer 143 are insulated.

The second electrode layer 120 transmits power applied through the connection electrode 121 to the second semiconductor layer 145 so that the current of the second semiconductor layer 145 is rapidly diffused. That is, when power is directly applied to the second semiconductor layer, the current can not be diffused due to the resistance of the second semiconductor layer. In the second electrode layer 120, a plurality of connection electrodes 121 are formed, The current diffusion of the second semiconductor layer 145 can be accelerated. As a result, if the current diffusion of the second semiconductor layer 145 is accelerated, the luminous efficiency of the light emitting device 100 is also improved.

A plurality of connection electrodes 121 may be disposed apart from each other.

For example, as shown in Fig. 1, the connection electrodes 121 may be regularly arranged in the light emitting structure in consideration of current diffusion.

The connection electrode 121 may have various shapes in the form of a column. For example, it may include a cylinder, a polygonal column.

When the connecting electrode 121 has a cylindrical shape, the diameter of the connecting electrode 121 is usually 70 to 90 탆.

If the planar area of the connection electrode 121 is too large, there is a problem that the area of the active layer 143 is reduced and the area of light emission is reduced. When the planar area of the connection electrode 121 is too small, The current supplied to the second semiconductor layer 145 can not be effectively diffused. Therefore, the planar area of the connection electrode 121 may be 0.1% to 15% of the planar area of the light emitting structure.

Here, the planar area of the connection electrode 121 is a value obtained by summing the cross-sectional areas on the plane of the connection electrodes 121 based on FIG.

3 is a cross-sectional view according to another embodiment of the present invention.

The light emitting device 100A according to the embodiment of FIG. 3 differs from the embodiment of FIG. 2 in that it further includes a reflection layer 160A. Hereinafter, description of the same constituent elements in Fig. 2 will be omitted, and differences from Fig. 2 will be mainly described.

The reflective layer 160A is disposed on the interlayer insulating film 130. [ That is, the reflective layer 160A is disposed on the interlayer insulating layer 130 and the first semiconductor layer 141. [

The reflective layer 160A reflects light toward the interlayer insulating layer 130 of the light generated in the active layer 143 toward the upper portion of the light emitting structure to improve the luminous efficiency of the light emitting device.

The reflective layer 160A may be formed of a material having a good reflection characteristic, for example, a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, A metal material and a light-transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. Further, the reflective layer 160A can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag /

In addition, a region through which the connection electrode 121 penetrates may be formed in the reflection layer 160A.

4 to 6 are flowcharts illustrating a method of manufacturing the embodiment of FIG.

Referring to FIG. 4, a buffer layer 102 is laminated on a growth substrate 101.

The second semiconductor layer 145, the active layer 143, and the first semiconductor layer 141 are sequentially stacked on the buffer layer 102. Then,

Referring to FIG. 5, the growth substrate 101 and the buffer layer 102 may be removed by at least one of a laser lift off method and a chemical lift off method.

The laser lift off (LLO) is a step of peeling the interface between the growth substrate 101 and the second semiconductor layer 145 by irradiating the laser through the backside of the growth substrate 101.

As the growth substrate 101 is removed, the lower surface of the second semiconductor layer 145 can be exposed. At this time, the exposed second semiconductor layer 145 may be wet etched to remove surface impurities.

An interlayer insulating layer 130 is formed on the upper surface of the first semiconductor layer 141.

Holes penetrating the interlayer insulating film 130, the first semiconductor layer 141, and the active layer 143 are formed by the etching method, and the sidewall insulating film 150 is formed on the sidewalls of the holes.

And the connecting electrode 121 is formed in the hole described above.

The second electrode layer 120 is formed on the upper surface of the interlayer insulating layer 130 and the upper surface of the connection electrode 121.

A supporting member 110 is coupled to the upper surface of the second electrode layer 120.

6, a portion of the second semiconductor layer 145 and the active layer 143 are removed and the first semiconductor layer 141 is exposed to the outside, The first electrode layer 160 is formed.

FIG. 7 is a perspective view illustrating a light emitting device package including the light emitting device according to the embodiment, and FIG. 8 is a cross-sectional view illustrating a light emitting device package including the light emitting device according to the embodiment.

7 and 8, the light emitting device package 500 includes a body 510 having a cavity 520, first and second lead frames 540 and 550 mounted on the body 510, A light emitting device 530 electrically connected to the first and second lead frames 540 and 550 and an encapsulant (not shown) encapsulated in the cavity 520 to cover the light emitting device 530.

The body 510 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T (SPS), a metal material, sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), and a printed circuit board (PCB). The body 510 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 510 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 530 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be controlled.

Concentration of light emitted to the outside from the light emitting device 530 increases as the directivity angle of light decreases. Conversely, as the directivity angle of light increases, the concentration of light emitted from the light emitting device 530 decreases.

The shape of the cavity 520 formed in the body 510 may be circular, rectangular, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The light emitting element 530 is mounted on the first lead frame 540 and may be a light emitting element that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. In addition, one or more light emitting elements 530 may be mounted.

The light emitting device 530 may be a horizontal type or a vertical type formed on the upper or lower surface of the light emitting device 530 or a flip chip Applicable.

The encapsulant (not shown) may be filled in the cavity 520 to cover the light emitting device 530.

The encapsulant (not shown) may be formed of silicon, epoxy, or other resin material. The encapsulant may be filled in the cavity 520 and ultraviolet or thermally cured.

In addition, the encapsulant (not shown) may include a phosphor, and the phosphor may be selected to be a wavelength of light emitted from the light emitting device 530 so that the light emitting device package 500 may emit white light.

The phosphor may be one of a blue light emitting phosphor, a blue light emitting phosphor, a green light emitting phosphor, a sulfur green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor depending on the wavelength of light emitted from the light emitting device 530 Can be applied.

That is, the phosphor may be excited by the light having the first light emitted from the light emitting device 530 to generate the second light. For example, when the light emitting element 530 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue light emitted from the blue light emitting diode As the excited yellow light is mixed, the light emitting device package 500 can provide white light.

Similarly, when the light emitting element 530 is a green light emitting diode, the magenta phosphor or the blue and red phosphors are mixed, and when the light emitting element 530 is a red light emitting diode, the cyan phosphors or the blue and green phosphors are mixed For example.

Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first and second lead frames 540 and 550 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium , Hafnium (Hf), ruthenium (Ru), and iron (Fe). Also, the first and second lead frames 540 and 550 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The first and second lead frames 540 and 550 are separated from each other and electrically separated from each other. The light emitting element 530 is mounted on the first and second lead frames 540 and 550 and the first and second lead frames 540 and 550 are in direct contact with the light emitting element 530, And may be electrically connected through a conductive material such as a conductive material. In addition, the light emitting device 530 may be electrically connected to the first and second lead frames 540 and 550 through wire bonding, but is not limited thereto. Accordingly, when power is supplied to the first and second lead frames 540 and 550, power may be applied to the light emitting device 530. Meanwhile, a plurality of lead frames (not shown) may be mounted in the body 510 and each lead frame (not shown) may be electrically connected to the light emitting device 530, but is not limited thereto.

The light emitting device according to the embodiment can be applied to an illumination system. The lighting system includes a structure in which a plurality of light emitting elements are arrayed and includes a display device shown in Figs. 9 and 10, a lighting device shown in Fig. 11, and may include a lighting lamp, a traffic light, a vehicle headlight, have.

9 is an exploded perspective view of a display device having a light emitting device according to an embodiment.

9, a display device 1000 according to an exemplary embodiment of the present invention includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041 and a display panel 1061 on the optical sheet 1051 and the light guide plate 1041 and the light source module 1031 and the reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material, for example, acrylic resin such as polymethylmethacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphtha late Resin. ≪ / RTI >

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light source module 1031 includes at least one light source module 1031 and may directly or indirectly provide light from one side of the light guide plate 1041. The light source module 1031 includes a substrate 1033 and a light emitting device 1035 according to the embodiment described above and the light emitting devices 1035 may be arrayed at a predetermined interval on the substrate 1033 .

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting element 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting devices 1035 may be mounted on the substrate 1033 such that the light emitting surface is spaced apart from the light guiding plate 1041 by a predetermined distance. However, the present invention is not limited thereto. The light emitting device 1035 may directly or indirectly provide light to the light-incident portion, which is one surface of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

10 is a view showing a display device having a light emitting element according to an embodiment.

10, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device 1124 is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1120 and the light emitting device 1124 may be defined as a light source module 1160. The bottom cover 1152, the at least one light source module 1160, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto. The light source module 1160 includes a substrate 1120 and a plurality of light emitting devices 1124 arranged on the substrate 1120.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a polymethyl methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light source module 1160 and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1160.

11 is an exploded perspective view of a lighting device having a light emitting device according to an embodiment.

11, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device according to an embodiment of the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light emitting device 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 into which the plurality of light emitting elements 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light emitting device 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and a protrusion 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The protrusion 2670 has a shape protruding outward from the other side of the base 2650. The protrusion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the protrusion 2670 may be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the protrusion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800.

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (12)

A support member;
A second electrode layer disposed on the support member;
A light emitting structure including a first semiconductor layer disposed on the second electrode layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
An interlayer insulating film disposed between the second electrode layer and the first semiconductor layer to insulate the second electrode layer from the first semiconductor layer;
A connection electrode electrically connecting a plurality of regions of the second electrode layer to a plurality of regions of the second semiconductor layer; And
And a first electrode layer electrically connected to the first semiconductor layer,
The inter-
A light emitting device comprising: a first insulating layer having at least compressive stress; and a second insulating layer having a tensile stress. The method according to claim 1,
Wherein the first insulating layer and the second insulating layer are alternately laminated on the interlayer insulating film. The method according to claim 1,
Light emitting device of the first insulating layer comprises SiO _x (Silicon Oxide). The method of claim 3,
And the second insulating layer comprises Si _x N _y (silicon nitride). The method according to claim 1,
And a reflective layer for reflecting light generated in the active layer is further formed on the interlayer insulating layer. The method according to claim 1,
The connecting electrode
The first semiconductor layer, and the active layer through a predetermined region of the interlayer insulating film, the first semiconductor layer, and the active layer. The method according to claim 6,
And a sidewall insulating film for insulating the connection electrode from the first semiconductor layer and the active layer. The method according to claim 6,
And the diameter of the connecting electrode is 70 占 퐉 to 90 占 퐉. The method according to claim 6,
Wherein a planar area of the connection electrode is 0.1% to 15% of a planar area of the light emitting structure. 8. The method of claim 7,
Wherein the connection electrode is in the form of a column, and the sidewall insulation film surrounds the outer surface of the connection electrode. A light emitting device package comprising the light emitting device according to any one of claims 1 to 10. 11. A lighting device comprising the light-emitting element according to any one of claims 1 to 10.

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