CN204578503U - A kind of power supply lagging circuit - Google Patents

A kind of power supply lagging circuit Download PDF

Info

Publication number
CN204578503U
CN204578503U CN201520358307.9U CN201520358307U CN204578503U CN 204578503 U CN204578503 U CN 204578503U CN 201520358307 U CN201520358307 U CN 201520358307U CN 204578503 U CN204578503 U CN 204578503U
Authority
CN
China
Prior art keywords
power supply
mosfet
power
circuit
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201520358307.9U
Other languages
Chinese (zh)
Inventor
章圣焰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Aeronautical Radio Electronics Research Institute
Original Assignee
China Aeronautical Radio Electronics Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Aeronautical Radio Electronics Research Institute filed Critical China Aeronautical Radio Electronics Research Institute
Priority to CN201520358307.9U priority Critical patent/CN204578503U/en
Application granted granted Critical
Publication of CN204578503U publication Critical patent/CN204578503U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

A kind of power supply lagging circuit, belongs to electronic engineering field.A kind of power supply lagging circuit, comprise clock circuit, MOSFET pipe, power supply supply Vcc and chip power supply Vdd, the grid G of MOSFET pipe is connected to the transmit control signal clock circuit of CTL of MOSFET pipe, the drain D series chip power supply supply Vdd of MOSFET pipe, power supply supply Vcc powers to power supply lagging circuit, and the drain D of described MOSFET pipe and source S supply Vcc and chip power at power supply and supply between Vdd and construct a Grounding.The utility model can meet the application needs of most of occasion, applied widely, and restriction is few, makes the use of power supply lagging circuit more convenient.

Description

一种电源滞后电路A power hysteresis circuit

技术领域technical field

本实用新型涉及一种电源滞后电路,其包括N沟道MOSFET型电源滞后电路和P沟道MOSFET型电源滞后电路,属于电子工程领域。The utility model relates to a power supply hysteresis circuit, which comprises an N-channel MOSFET type power supply hysteresis circuit and a P-channel MOSFET type power supply hysteresis circuit, belonging to the field of electronic engineering.

背景技术Background technique

芯片是电子设计中必不可少的元器件,大部分芯片内部具有上电复位电路,当供电电压大于门限电压VTT时,复位电路进行初始化(复位)操作,而复位电路初始化一般需要时钟进行驱动,故时钟供给需要与电源供给相匹配,一般来说,在供电电压到达VTT前,芯片需接收到至少3个周期的时钟信号才能保证上电复位正常进行,芯片内部上电复位时序见图1所示。而时钟供给一般由时钟电路产生,在同一块电路板上,时钟电路和芯片一般由同一个电源(供电电路)进行供电,其示意图见图2,从该图可知,因时钟电路有处理时延,故芯片的电源供给要早于时钟供给,而这就需要增加电源滞后电路将芯片的电源滞后供给,且滞后时间需大于时钟电路的处理时延,如图3所示。The chip is an indispensable component in electronic design. Most chips have a power-on reset circuit inside. When the power supply voltage is greater than the threshold voltage VTT, the reset circuit performs initialization (reset) operation, and the initialization of the reset circuit generally requires a clock to drive. Therefore, the clock supply needs to match the power supply. Generally speaking, before the power supply voltage reaches VTT, the chip needs to receive at least 3 cycles of the clock signal to ensure the normal power-on reset. The internal power-on reset sequence of the chip is shown in Figure 1. Show. The clock supply is generally generated by the clock circuit. On the same circuit board, the clock circuit and the chip are generally powered by the same power supply (power supply circuit). , so the power supply of the chip is earlier than the clock supply, and this requires adding a power hysteresis circuit to delay the power supply of the chip, and the lag time must be greater than the processing delay of the clock circuit, as shown in Figure 3.

常见的电源滞后电路设计方法是使用电阻电容构成充放电电路,以电容的充电时间作为滞后时延,电路原理见图4,在任意时刻t,有以下公式:Vdd=Vcc×[1-exp(-t/RC)],从该公式可得出当t=3RC时,Vdd=0.95Vcc≈VTT,即需要经过3RC的时间,芯片电源的供电电压才达到门限电压VTT。A common power supply hysteresis circuit design method is to use resistors and capacitors to form a charging and discharging circuit, and the charging time of the capacitor is used as the lag time delay. The circuit principle is shown in Figure 4. At any time t, there is the following formula: Vdd=Vcc×[1-exp( -t/RC)], it can be drawn from this formula that when t=3RC, Vdd=0.95Vcc≈VTT, that is, it takes 3RC for the supply voltage of the chip power supply to reach the threshold voltage VTT.

另外一种常用的电源滞后电路设计方法是采用由继电器构成的电路来实现,电路原理见图5,在默认状态下,继电器的输入和输出关系为INA1→OUTA、INB1→OUTB,此时Vdd=0,可通过外部信号的控制改变继电器的输入和输出关系,例如,时钟电路在正常运行后,可让其送出一个高电平的控制信号CTL,继电器在CTL的控制下输入和输出关系变为INA2→OUTA、INB2→OUTB,这样Vdd=Vcc,即保证了时钟供给正常后,芯片的电源才正常供给。Another commonly used power hysteresis circuit design method is to use a circuit composed of relays. The circuit principle is shown in Figure 5. In the default state, the relationship between the input and output of the relay is INA1→OUTA, INB1→OUTB. At this time, Vdd= 0, the relationship between the input and output of the relay can be changed through the control of external signals. For example, after the clock circuit is in normal operation, it can send a high-level control signal CTL, and the relationship between the input and output of the relay under the control of CTL becomes INA2→OUTA, INB2→OUTB, so that Vdd=Vcc, that is, after the clock supply is guaranteed, the power supply of the chip is normally supplied.

虽然常以电阻电容构成的电容型电源滞后电路或以继电器构成的继电器型电源滞后电路来实现电源的滞后供给,但这两种电源滞后电路设计不能满足很多场合的应用需求,例如电容型电源滞后电路的滞后时间为t=3RC,它和时钟电路的时延T没有确定的先后关系,为了使t>T,只能尽量选择大电阻值的R和大电容值的C,而R的值太大将导致实际使用时因压降太大致使Vdd不能达到芯片最小工作电压值,C的值太大将使Vcc的负载电容很大,不利于Vcc的安全使用;继电器虽然在时序控制上能够保证芯片的时钟供给先于电源供给,但继电器的封装体积较大,且对控制信号CTL有电平要求,不能满足某些特殊应用。Although a capacitive power hysteresis circuit composed of resistors and capacitors or a relay-type power hysteresis circuit composed of relays are often used to realize the hysteresis supply of power, these two power hysteresis circuit designs cannot meet the application requirements of many occasions, such as capacitive power hysteresis The delay time of the circuit is t=3RC, which has no definite relationship with the time delay T of the clock circuit. In order to make t>T, we can only choose R with a large resistance value and C with a large capacitance value as much as possible, and the value of R is too large. It will lead to the fact that Vdd cannot reach the minimum working voltage value of the chip due to too large voltage drop in actual use. If the value of C is too large, the load capacitance of Vcc will be large, which is not conducive to the safe use of Vcc; The clock supply is prior to the power supply, but the packaging volume of the relay is relatively large, and there is a level requirement for the control signal CTL, which cannot meet some special applications.

实用新型内容Utility model content

本实用新型的目的在于提供一种电源滞后电路,其中包含了MOSFET管,MOSFET管为场效应管,使用一片N沟道MOSFET管或一片P沟道MOSFET管构建电源供给滞后电路,使该电源滞后电路可以满足大多数场合的应用需要,适用范围广,限制少,使电源滞后电路的使用更为方便。The purpose of this utility model is to provide a power supply hysteresis circuit, which includes a MOSFET tube, and the MOSFET tube is a field effect tube. A piece of N-channel MOSFET tube or a piece of P-channel MOSFET tube is used to construct a power supply hysteresis circuit, so that the power supply lags The circuit can meet the application needs of most occasions, has a wide range of applications, and has few restrictions, so that the use of the power hysteresis circuit is more convenient.

实现上述目的,本实用新型采取的技术方案如下:Realize above-mentioned purpose, the technical scheme that the utility model takes is as follows:

一种电源滞后电路,包括时钟电路、MOSFET管、电源供给Vcc和芯片电源供给Vdd,向MOSFET管发送控制信号CTL的时钟电路连接MOSFET管的栅极G,MOSFET管的漏极D串联芯片电源供给Vdd,电源供给Vcc向电源滞后电路供电,所述的MOSFET管的漏极D与源极S在电源供给Vcc和芯片电源供给Vdd之间构建了一条接地通道。A power hysteresis circuit, including a clock circuit, a MOSFET tube, a power supply Vcc and a chip power supply Vdd, the clock circuit that sends a control signal CTL to the MOSFET tube is connected to the gate G of the MOSFET tube, and the drain D of the MOSFET tube is connected in series to the chip power supply Vdd, the power supply Vcc supplies power to the power hysteresis circuit, and the drain D and source S of the MOSFET tube construct a grounding channel between the power supply Vcc and the chip power supply Vdd.

进一步的,所述的电源滞后电路包括N沟道MOSFET型电源滞后电路和P沟道MOSFET型电源滞后电路。Further, the power hysteresis circuit includes an N-channel MOSFET power hysteresis circuit and a P-channel MOSFET power hysteresis circuit.

进一步的,所述的电源滞后电路为N沟道MOSFET型电源滞后电路时,还包括电阻R,起分压作用的电阻R串联在电源供给Vcc和MOSFET管的漏极D中间,MOSFET管的源极S接地,当时钟电路输出给MOSFET管的栅极G的控制信号CTL为高电平时,MOSFET管为开启状态,芯片处于未上电状态;当时钟电路输出给MOSFET管的栅极G的控制信号CTL为低电平时,MOSFET管为全夹断状态,芯片处于上电状态。Further, when the power supply hysteresis circuit is an N-channel MOSFET type power supply hysteresis circuit, it also includes a resistor R, and the resistor R acting as a voltage divider is connected in series between the power supply Vcc and the drain D of the MOSFET tube, and the source of the MOSFET tube When the pole S is grounded, when the control signal CTL output by the clock circuit to the gate G of the MOSFET is high, the MOSFET is turned on and the chip is in an unpowered state; when the clock circuit outputs the control signal to the gate G of the MOSFET When the signal CTL is at a low level, the MOSFET tube is fully pinched off, and the chip is in a power-on state.

进一步的,所述的电源滞后电路为P沟道MOSFET型电源滞后电路时,MOSFET管的源极S与电源供给Vcc串联,当时钟电路输出给MOSFET管的栅极G的控制信号CTL为高电平时,MOSFET管为全夹断状态,芯片处于未上电状态;当时钟电路输出给MOSFET管的栅极G的控制信号CTL为低电平时,MOSFET管为开启状态,芯片处于上电状态。Further, when the power hysteresis circuit is a P-channel MOSFET type power hysteresis circuit, the source S of the MOSFET is connected in series with the power supply Vcc, and when the control signal CTL output by the clock circuit to the gate G of the MOSFET is a high voltage Normally, the MOSFET is fully pinched off and the chip is not powered on; when the control signal CTL output from the clock circuit to the gate G of the MOSFET is low, the MOSFET is turned on and the chip is powered on.

本实用新型具有以下有益效果:The utility model has the following beneficial effects:

本实用新型提出了一种用MOSFET管来实现电源滞后供给的装置。它实现简单、稳定可靠、方便易用,同时因其具有成本低,适用范围广的特性,故该装置推广性强,具有显著的经济效益。The utility model proposes a device which uses a MOSFET tube to realize the lagging power supply. It is simple, stable and reliable, convenient and easy to use, and because of its low cost and wide application range, the device has strong popularization and significant economic benefits.

附图说明Description of drawings

图1是芯片上电时序图;Figure 1 is a timing diagram of chip power-on;

图2是电路板时钟、电源供给示意图;Figure 2 is a schematic diagram of circuit board clock and power supply;

图3是改进后电路板时钟、电源供给示意图;Figure 3 is a schematic diagram of the improved circuit board clock and power supply;

图4是电容型电源滞后电路设计图;Fig. 4 is a design diagram of a capacitive power supply hysteresis circuit;

图5是继电器型电源滞后电路设计图;Fig. 5 is a design diagram of a relay type power supply hysteresis circuit;

图6是N沟道MOSFET型电源滞后电路设计图;Figure 6 is a design diagram of an N-channel MOSFET type power supply hysteresis circuit;

图7是P沟道MOSFET型电源滞后电路设计图;Figure 7 is a design diagram of a P-channel MOSFET type power supply hysteresis circuit;

图8是改进型N沟道MOSFET型电源滞后电路设计图;Figure 8 is a design diagram of an improved N-channel MOSFET power supply hysteresis circuit;

图9是改进型P沟道MOSFET型电源滞后电路设计图。Figure 9 is a design diagram of an improved P-channel MOSFET power supply hysteresis circuit.

具体实施方式Detailed ways

本实用新型的具体实施例如下:The specific embodiment of the utility model is as follows:

如图6~图7所示,一种电源滞后电路,包括时钟电路、MOSFET管、电源供给Vcc和芯片电源供给Vdd,向MOSFET管发送控制信号CTL的时钟电路连接MOSFET管的栅极G,MOSFET管的漏极D串联芯片电源供给Vdd,电源供给Vcc向电源滞后电路供电,所述的MOSFET管的漏极D与源极S在电源供给Vcc和芯片电源供给Vdd之间构建了一条接地通道。As shown in Figures 6 to 7, a power hysteresis circuit includes a clock circuit, a MOSFET, a power supply Vcc, and a chip power supply Vdd. The clock circuit that sends a control signal CTL to the MOSFET is connected to the gate G of the MOSFET, and the MOSFET The drain D of the tube is connected in series with the chip power supply Vdd, and the power supply Vcc supplies power to the power hysteresis circuit. The drain D and source S of the MOSFET tube build a grounding channel between the power supply Vcc and the chip power supply Vdd.

进一步的,所述的电源滞后电路包括N沟道MOSFET型电源滞后电路和P沟道MOSFET型电源滞后电路。Further, the power hysteresis circuit includes an N-channel MOSFET power hysteresis circuit and a P-channel MOSFET power hysteresis circuit.

如图6所示,所述的电源滞后电路为N沟道MOSFET型电源滞后电路时,还包括电阻R,起分压作用的电阻R串联在电源供给Vcc和MOSFET管的漏极D中间,MOSFET管的源极S接地,当时钟电路输出给MOSFET管的栅极G的控制信号CTL为高电平时,MOSFET管为开启状态,芯片处于未上电状态;当时钟电路输出给MOSFET管的栅极G的控制信号CTL为低电平时,MOSFET管为全夹断状态,芯片处于上电状态。As shown in Figure 6, when the power hysteresis circuit is an N-channel MOSFET type power hysteresis circuit, it also includes a resistor R, and the resistor R that acts as a voltage divider is connected in series between the power supply Vcc and the drain D of the MOSFET tube. The source S of the tube is grounded. When the control signal CTL output by the clock circuit to the gate G of the MOSFET tube is at a high level, the MOSFET tube is turned on and the chip is in an unpowered state; when the clock circuit outputs to the gate G of the MOSFET tube When the control signal CTL of G is at a low level, the MOSFET tube is in a pinch-off state, and the chip is in a power-on state.

如图8所示,可以在原N沟道MOSFET型电源滞后电路上再添加一电阻R1,使电阻R1一端串联电源供给Vcc,另一端同时连接时钟电路和MOSFET管的栅极G。默认情况下,控制信号CTL为高电平加在MOSFET的栅极G,可以通过电阻R1(如10k欧姆)上拉至Vcc,此时MOSFET管开启,漏极D和源极S之间形成导电N沟道,Vdd=VDS,因VDS一般较小(如2N7002的VDS≈2V),达不到芯片工作的最小工作电压,故此时芯片处于未上电状态,当时钟电路对芯片的时钟供给完成后,便可输出一低电平到MOSFET管的栅极G,使MOSFET管处于全夹断状态,漏极D和源极S之间的导电N沟道消失,Vdd=Vcc-R×i(i为芯片工作所需的电流),为了使Vdd≥芯片工作最小工作电压,电阻R的值不能太大,可根据实际情况确定阻值,这样芯片可正常上电,满足芯片的时钟供给早于电源供给,芯片上电复位能正常进行。As shown in Figure 8, a resistor R1 can be added to the original N-channel MOSFET power hysteresis circuit, so that one end of the resistor R1 is connected in series with the power supply Vcc, and the other end is connected to the clock circuit and the gate G of the MOSFET. By default, the control signal CTL is at a high level and applied to the gate G of the MOSFET, which can be pulled up to Vcc through a resistor R1 (such as 10k ohms). N-channel, Vdd=V DS , because V DS is generally small (such as 2N7002’s V DS ≈ 2V), it cannot reach the minimum working voltage of the chip, so the chip is not powered on at this time, when the clock circuit is on the chip After the clock supply is completed, a low level can be output to the gate G of the MOSFET, so that the MOSFET is in a full pinch-off state, and the conductive N channel between the drain D and the source S disappears, Vdd=Vcc-R ×i (i is the current required for the chip to work), in order to make Vdd ≥ the minimum working voltage of the chip, the value of the resistor R should not be too large, and the resistance value can be determined according to the actual situation, so that the chip can be powered on normally to meet the clock speed of the chip The supply is earlier than the power supply, and the power-on reset of the chip can be performed normally.

外部电源从端口输入后,经过电阻R的分压,接到MOSFET管和芯片供给电源的两端。电阻R的作用是:1.用来避免电压过大造成MOSFET的损坏;2.用来保证MOSFET管在开启状态时,所形成的VDS远小于芯片的工作电压。After the external power is input from the port, it is connected to both ends of the power supply of the MOSFET tube and the chip through the voltage division of the resistor R. The function of the resistor R is: 1. It is used to avoid damage to the MOSFET caused by excessive voltage; 2. It is used to ensure that when the MOSFET tube is in the on state, the formed V DS is much smaller than the working voltage of the chip.

如图7所示,进一步的,所述的电源滞后电路为P沟道MOSFET型电源滞后电路时,MOSFET管的源极S与电源供给Vcc串联,当时钟电路输出给MOSFET管的栅极G的控制信号CTL为高电平时,MOSFET管为全夹断状态,芯片处于未上电状态;当时钟电路输出给MOSFET管的栅极G的控制信号CTL为低电平时,MOSFET管为开启状态,芯片处于上电状态。As shown in Figure 7, further, when the power hysteresis circuit is a P-channel MOSFET type power hysteresis circuit, the source S of the MOSFET tube is connected in series with the power supply Vcc, when the clock circuit outputs to the gate G of the MOSFET tube When the control signal CTL is at high level, the MOSFET tube is fully pinched off, and the chip is not powered on; when the control signal CTL output from the clock circuit to the gate G of the MOSFET tube is at low level, the MOSFET tube is in the open state, and the chip is in the power-up state.

如图9所示,可以在原P沟道MOSFET型电源滞后电路上再添加一电阻R1,使电阻R1一端串联电源供给Vcc,另一端同时连接时钟电路和MOSFET管的栅极G。默认情况下,控制信号CTL为高电平加在MOSFET管的栅极G,可以通过电阻R1(如10k欧姆)上拉至Vcc,此时MOSFET管处于全夹断状态,漏极D和源极S之间的导电P沟道消失,Vdd=0,此时芯片处于未上电状态,当时钟电路对芯片的时钟供给完成后,便可输出一低电平到MOSFET管的栅极G,使MOSFET管开启,漏极D和源极S之间形成导电P沟道,Vdd=Vcc-VSD,因VSD一般较小可忽略(如NDS356AP的VSD≈10mV),故Vdd≈Vcc,这样芯片可正常上电,满足芯片的时钟供给早于电源供给,芯片上电复位能正常进行。As shown in Figure 9, a resistor R1 can be added to the original P-channel MOSFET power hysteresis circuit, so that one end of the resistor R1 is connected in series with the power supply to Vcc, and the other end is connected to the clock circuit and the gate G of the MOSFET. By default, the control signal CTL is high and applied to the gate G of the MOSFET, which can be pulled up to Vcc through the resistor R1 (such as 10k ohms). At this time, the MOSFET is in a fully pinched state, and the drain D and the source The conductive P channel between S disappears, Vdd=0, and the chip is not powered on at this time. When the clock circuit supplies the clock to the chip, it can output a low level to the gate G of the MOSFET tube, so that The MOSFET tube is turned on, and a conductive P channel is formed between the drain D and the source S, Vdd=Vcc-VSD, because VSD is generally small and negligible (such as VSD≈10mV of NDS356AP), so Vdd≈Vcc, so the chip can work normally After power-on, the clock supply of the chip is earlier than the power supply, and the power-on reset of the chip can be performed normally.

增加电阻R1的作用是:可以简化时钟电路输出的控制信号CTL,当没有电阻R1时,CTL输出需有高低电平变化,而当有电阻R1时,CTL只需输出低电平。The effect of adding resistor R1 is: it can simplify the control signal CTL output by the clock circuit. When there is no resistor R1, the output of CTL needs to have high and low level changes, and when there is resistor R1, CTL only needs to output low level.

Claims (4)

1.一种电源滞后电路,包括时钟电路、MOSFET管、电源供给Vcc和芯片电源供给Vdd,其特征是:向MOSFET管发送控制信号CTL的时钟电路连接MOSFET管的栅极G,MOSFET管的漏极D串联芯片电源供给Vdd,电源供给Vcc向电源滞后电路供电,所述的MOSFET管的漏极D与源极S在电源供给Vcc和芯片电源供给Vdd之间构建了一条接地通道。1. A power hysteresis circuit, comprising clock circuit, MOSFET tube, power supply Vcc and chip power supply Vdd, is characterized in that: the clock circuit sending control signal CTL to MOSFET tube is connected to the gate G of MOSFET tube, the drain of MOSFET tube The pole D is connected in series with the chip power supply Vdd, and the power supply Vcc supplies power to the power hysteresis circuit. The drain D and source S of the MOSFET tube construct a grounding channel between the power supply Vcc and the chip power supply Vdd. 2.根据权利要求1所述的一种电源滞后电路,其特征是:所述的电源滞后电路包括两种类型,分别为N沟道MOSFET型电源滞后电路和P沟道MOSFET型电源滞后电路。2. A power hysteresis circuit according to claim 1, characterized in that: said power hysteresis circuit includes two types, namely an N-channel MOSFET power hysteresis circuit and a P-channel MOSFET power hysteresis circuit. 3.根据权利要求2所述的一种电源滞后电路,其特征是:所述的电源滞后电路为N沟道MOSFET型电源滞后电路时,还包括电阻R,起分压作用的电阻R串联在电源供给Vcc和MOSFET管的漏极D中间,MOSFET管的源极S接地,当时钟电路输出给MOSFET管的栅极G的控制信号CTL为高电平时,MOSFET管为开启状态,芯片处于未上电状态;当时钟电路输出给MOSFET管的栅极G的控制信号CTL为低电平时,MOSFET管为全夹断状态,芯片处于上电状态。3. A kind of power supply hysteresis circuit according to claim 2, characterized in that: when said power supply hysteresis circuit is an N-channel MOSFET type power supply hysteresis circuit, it also includes a resistor R, and the resistor R which acts as a voltage divider is connected in series The power supply is between Vcc and the drain D of the MOSFET, and the source S of the MOSFET is grounded. When the control signal CTL output by the clock circuit to the gate G of the MOSFET is high, the MOSFET is turned on and the chip is not on. Power state; when the control signal CTL output from the clock circuit to the gate G of the MOSFET is at low level, the MOSFET is fully pinched off and the chip is in a power-on state. 4.根据权利要求2所述的一种电源滞后电路,其特征是:所述的电源滞后电路为P沟道MOSFET型电源滞后电路时,MOSFET管的源极S与电源供给Vcc串联,当时钟电路输出给MOSFET管的栅极G的控制信号CTL为高电平时,MOSFET管为全夹断状态,芯片处于未上电状态;当时钟电路输出给MOSFET管的栅极G的控制信号CTL为低电平时,MOSFET管为开启状态,芯片处于上电状态。4. A kind of power hysteresis circuit according to claim 2, characterized in that: when the power hysteresis circuit is a P-channel MOSFET type power hysteresis circuit, the source S of the MOSFET tube is connected in series with the power supply Vcc, and when the clock When the control signal CTL output by the circuit to the gate G of the MOSFET is high, the MOSFET is fully pinched off and the chip is not powered on; when the control signal CTL output by the clock circuit to the gate G of the MOSFET is low When the level is low, the MOSFET is turned on and the chip is powered on.
CN201520358307.9U 2015-05-29 2015-05-29 A kind of power supply lagging circuit Expired - Lifetime CN204578503U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520358307.9U CN204578503U (en) 2015-05-29 2015-05-29 A kind of power supply lagging circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520358307.9U CN204578503U (en) 2015-05-29 2015-05-29 A kind of power supply lagging circuit

Publications (1)

Publication Number Publication Date
CN204578503U true CN204578503U (en) 2015-08-19

Family

ID=53871091

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520358307.9U Expired - Lifetime CN204578503U (en) 2015-05-29 2015-05-29 A kind of power supply lagging circuit

Country Status (1)

Country Link
CN (1) CN204578503U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109004923A (en) * 2018-08-28 2018-12-14 深圳市新国都技术股份有限公司 Sequential control circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109004923A (en) * 2018-08-28 2018-12-14 深圳市新国都技术股份有限公司 Sequential control circuit

Similar Documents

Publication Publication Date Title
CN101656416B (en) Circuits and related chips embedded with voltage surges caused by hot plugging of power supplies
CN104378084B (en) Surge filter and filtering method
CN101882926A (en) Power on reset circuit for constant-current driving chip
CN101656414A (en) Power protection device
CN106325449A (en) Power on reset circuit with low power consumption
CN204012687U (en) There is the protective circuit of the pooling feature that powers on
CN204578503U (en) A kind of power supply lagging circuit
US20110068850A1 (en) Circuit for controlling time sequence
CN103746681A (en) Power-on/power-down output tri-state control circuit for CMOS device power supply
CN204290916U (en) Switching circuit
CN102496384B (en) Noise current compensation circuit
CN110798187B (en) Power-on reset circuit
CN207382188U (en) The delay of DC-DC chips output voltage is slow to rise circuit
CN104270138A (en) Input/Output Buffers for Multiple Voltage Domains
CN103746358B (en) Surge suppression circuit, switching device and set-top box
CN104980134B (en) A reset circuit and electronic equipment with the circuit
CN103795396A (en) Circuit structure for eliminating short circuit currents
CN114006614B (en) Hot plug structure based on NMOS pull-up driver
CN113794472B (en) Power-on detection circuit, GPIO interface circuit and integrated circuit chip
US20150089266A1 (en) Switch circuit and computing device having same
US20180277196A1 (en) Double data rate synchronous dynamic random access memory and output driving circuit thereof
CN202721658U (en) A switching power supply chip with integrated power-on reset function
CN204154800U (en) A kind of zero cross detection circuit
CN108809285A (en) A kind of transmission gate circuit of isolation high input voltage
CN203027230U (en) Anti-jamming reset circuit

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CB03 Change of inventor or designer information

Inventor after: Zhang Shengyan

Inventor after: Liu Xiaokang

Inventor after: Hu Shuixian

Inventor after: Tong Xin

Inventor before: Zhang Shengyan

COR Change of bibliographic data
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20150819