CN204577465U - Increase the back side reflection multilayer metal level of blue chip brightness - Google Patents
Increase the back side reflection multilayer metal level of blue chip brightness Download PDFInfo
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- CN204577465U CN204577465U CN201520188565.7U CN201520188565U CN204577465U CN 204577465 U CN204577465 U CN 204577465U CN 201520188565 U CN201520188565 U CN 201520188565U CN 204577465 U CN204577465 U CN 204577465U
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Abstract
The utility model increases the back side reflection multilayer metal level of blue chip brightness, belongs to Sapphire Substrate backside reflection layer field; There is provided a kind of can heighten metallic reflector and sapphire substrate adhesive force and the multiple layer metal reflector of LED luminance can be increased; Described metallic reflector is four-layer structure, and from the inside to surface, ground floor is Cr, and thickness is 10-100 Ethylmercurichlorendimide, and the second layer is Ag, and thickness is 1000-5000 Ethylmercurichlorendimide, and third layer is Cr, and thickness is 300-1000 Ethylmercurichlorendimide, and the 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
Description
Technical field
The utility model increases the back side reflection multilayer metal level of blue chip brightness, belongs to Sapphire Substrate backside reflection layer field.
Background technology
LED is a kind of can be the semiconductor electronic component of luminous energy by electric energy conversion.Along with the develop rapidly of LED industry, the leap of technology breaks through, and recent LED is used in cell phone, digital camera, personal digital assistant, traffic lights, automobile etc. on a large scale.Because the brightness of light sent is for sufficient not for the LED in this application, thus LED may be used for other application examples as general lighting before need higher brightness.
At present in order to improve the luminosity of LED, the mode of usual employing is direct evaporation metal argentum reflecting layer at the back side of Sapphire Substrate, but there is following problem in this metallic reflector: 1 is that the adhesion effect of argent and Sapphire Substrate is poor, in the process of subsequent production and use, there will be the problem that the thin layer of argent and Sapphire Substrate come off, affect the brightness of LED; 2 is because the activity of argent itself is high, in the process used, be easy to oxidation, thus reduces the effect of metallic reflector, does not reach good brightening effect.
Utility model content
The utility model overcomes the deficiency that prior art exists, and solves prior art Problems existing, provides a kind of and can heighten metallic reflector and sapphire substrate adhesive force and can increase the multiple layer metal reflector of LED luminance.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is: the back side reflection multilayer metal level increasing blue chip brightness, comprises sapphire substrate, the back side of described sapphire substrate is provided with metallic reflector, and described metallic reflector is four-layer structure, from the inside to surface, ground floor is Cr, thickness is 10-100 Ethylmercurichlorendimide, and the second layer is Ag, and thickness is 1000-5000 Ethylmercurichlorendimide, third layer is Cr, thickness is 300-1000 Ethylmercurichlorendimide, and the 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
Preferably, described ground floor is Ni, and thickness is 10-100 Ethylmercurichlorendimide, and the second layer is Ag, and thickness is 1000-5000 Ethylmercurichlorendimide, and third layer is Ni, and thickness is 300-1000 Ethylmercurichlorendimide, and the 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
The preparation method of metallic reflector, utilize heated type metal evaporation machine evaporation metal reflector, ground floor evaporation metal Cr, cavity temperature is 20-50 degree, the evaporation rate of Metal Cr is 1-2 dust meter per second, second layer evaporation metal Ag, cavity temperature is 20-50 degree, the evaporation rate of metal A g is 6-10 dust meter per second, third layer evaporation metal Cr, and cavity temperature is 20-50 degree, the evaporation rate of Metal Cr is 1 dust meter per second, 4th layer of evaporation metal Al, cavity temperature is 20-50 degree, and the evaporation rate of metal A l is 30-50 dust meter per second.
The preparation method of metallic reflector, utilize heated type metal evaporation machine evaporation metal reflector, ground floor evaporation metal Ni, cavity temperature is 20-50 degree, the evaporation rate of W metal is 1-2 dust meter per second, second layer evaporation metal Ag, cavity temperature is 20-50 degree, the evaporation rate of metal A g is 6-10 dust meter per second, third layer evaporation metal Ni, and cavity temperature is 20-50 degree, the evaporation rate of W metal is 1 dust meter per second, 4th layer of evaporation metal Al, cavity temperature is 20-50 degree, and the evaporation rate of metal A l is 30-50 dust meter per second.
The utility model compared with prior art has following beneficial effect: the utility model is in order to improve the adhesive force of metallic silver reflective layers and Sapphire Substrate, first in Sapphire Substrate back side evaporation layer of metal layers of chrome, then by evaporation metal silver layer, the thickness of metallic silver layer is 1000-5000 Ethylmercurichlorendimide, the reflectivity of metallic reflector can be ensured, promote LED luminance to greatest extent, the bottom surface evaporation layer of metal layers of chrome again of metallic silver layer, for the protection of the stability of metallic silver layer, metallic silver layer is prevented to be oxidized, finally at the back side evaporation layer of metal aluminium lamination of third layer metallic chromium layer, further raising LED luminance.
By arranging the metallic reflection Rotating fields of this four layers, the evaporator of heated type can be utilized to replace the electronic type evaporator usually adopted in industry, while guarantee LED luminance, can greatly reduce equipment disbursement, the minimizing cost of expense is more than 4,000,000.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in more detail.
Fig. 1 is the structural representation of LED.
Fig. 2 is the structural representation of metallic reflector in embodiment one.
Fig. 3 is the structural representation of metallic reflector in embodiment three.
Embodiment
Embodiment one
As shown in Figure 1 and Figure 2, increase the back side reflection multilayer metal level of blue chip brightness, comprise sapphire substrate, the back side of described sapphire substrate is provided with metallic reflector, and described metallic reflector is four-layer structure, from the inside to surface, ground floor is Cr, thickness is 10-100 Ethylmercurichlorendimide, and the second layer is Ag, and thickness is 1000-5000 Ethylmercurichlorendimide, third layer is Cr, thickness is 300-1000 Ethylmercurichlorendimide, and the 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
The preparation method of metallic reflector, before evaporation metal reflector, epitaxial wafer completes chip processing procedure, and then grinding, polishing chip back form the smooth surface of minute surface, finally carry out evaporation.
Utilize heated type metal evaporation machine evaporation metal reflector, ground floor evaporation metal Cr, cavity temperature is 20-50 degree, the evaporation rate of Metal Cr is 1-2 dust meter per second, second layer evaporation metal Ag, cavity temperature is 20-50 degree, and the evaporation rate of metal A g is 6-10 dust meter per second, third layer evaporation metal Cr, cavity temperature is 20-50 degree, and the evaporation rate of Metal Cr is 1 dust meter per second, the 4th layer of evaporation metal Al, cavity temperature is 20-50 degree, and the evaporation rate of metal A l is 30-50 dust meter per second.
Embodiment two
Increase the back side reflection multilayer metal level of blue chip brightness, comprise sapphire substrate, the back side of described sapphire substrate is provided with metallic reflector, described metallic reflector is four-layer structure, from the inside to surface, ground floor is Cr, and thickness is 20 Ethylmercurichlorendimides, the second layer is Ag, thickness is 1000 Ethylmercurichlorendimides, and third layer is Cr, and thickness is 500 Ethylmercurichlorendimides, 4th layer is Al, and thickness is 3500 Ethylmercurichlorendimides.
Utilize heated type metal evaporation machine evaporation metal reflector, ground floor evaporation metal Cr, cavity temperature is 45 degree, the evaporation rate of Metal Cr is 1 dust meter per second, second layer evaporation metal Ag, cavity temperature is 45 degree, and the evaporation rate of metal A g is 8 dust meter per seconds, third layer evaporation metal Cr, cavity temperature is 45 degree, and the evaporation rate of Metal Cr is 1 dust meter per second, the 4th layer of evaporation metal Al, cavity temperature is 45 degree, and the evaporation rate of metal A l is 40 dust meter per seconds.
Get the different wafer of two panels, be cleaved into two half respectively, a half of respectively asking for is inserted in heated type evaporator, carries out evaporation according to said process.Under equal conditions photo electric test is carried out with the half not doing evaporation after evaporation completes.Test result is as follows:
Data show, then behind evaporation reflector, luminance raising, than being about 21%-23%, has encapsulated rear luminance raising than being 3-4%.
Embodiment three
As shown in Figure 1, Figure 3, increase the back side reflection multilayer metal level of blue chip brightness, comprise sapphire substrate, the back side of described sapphire substrate is provided with metallic reflector, and described metallic reflector is four-layer structure, from the inside to surface, ground floor is Ni, thickness is 10-100 Ethylmercurichlorendimide, and the second layer is Ag, and thickness is 1000-5000 Ethylmercurichlorendimide, third layer is Ni, thickness is 300-1000 Ethylmercurichlorendimide, and the 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
The preparation method of metallic reflector, before evaporation metal reflector, epitaxial wafer completes chip processing procedure, and then grinding, polishing chip back form the smooth surface of minute surface, finally carry out evaporation.
Utilize heated type metal evaporation machine evaporation metal reflector, ground floor evaporation metal Ni, cavity temperature is 20-50 degree, the evaporation rate of Metal Cr is 1-2 dust meter per second, second layer evaporation metal Ag, cavity temperature is 20-50 degree, and the evaporation rate of metal A g is 6-10 dust meter per second, third layer evaporation metal Ni, cavity temperature is 20-50 degree, and the evaporation rate of Metal Cr is 1 dust meter per second, the 4th layer of evaporation metal Al, cavity temperature is 20-50 degree, and the evaporation rate of metal A l is 30-50 dust meter per second.
Embodiment four
Increase the back side reflection multilayer metal level of blue chip brightness, comprise sapphire substrate, the back side of described sapphire substrate is provided with metallic reflector, described metallic reflector is four-layer structure, from the inside to surface, ground floor is Ni, and thickness is 50 Ethylmercurichlorendimides, the second layer is Ag, thickness is 2000 Ethylmercurichlorendimides, and third layer is Cr, and thickness is 700 Ethylmercurichlorendimides, 4th layer is Al, and thickness is 4000 Ethylmercurichlorendimides.
By reference to the accompanying drawings embodiment of the present utility model is explained in detail above, but the utility model is not limited to above-described embodiment, in the ken that those of ordinary skill in the art possess, various change can also be made under the prerequisite not departing from the utility model aim.
Claims (2)
1. increase the back side reflection multilayer metal level of blue chip brightness, comprise sapphire substrate, it is characterized in that: the back side of described sapphire substrate is provided with metallic reflector, described metallic reflector is four-layer structure, from the inside to surface, ground floor is Cr, and thickness is 10-100 Ethylmercurichlorendimide, the second layer is Ag, thickness is 1000-5000 Ethylmercurichlorendimide, and third layer is Cr, and thickness is 300-1000 Ethylmercurichlorendimide, 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
2. increase the back side reflection multilayer metal level of blue chip brightness, it is characterized in that: described ground floor is Ni, thickness is 10-100 Ethylmercurichlorendimide, the second layer is Ag, and thickness is 1000-5000 Ethylmercurichlorendimide, and third layer is Ni, thickness is 300-1000 Ethylmercurichlorendimide, and the 4th layer is Al, and thickness is 1000-5000 Ethylmercurichlorendimide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520188565.7U CN204577465U (en) | 2015-03-31 | 2015-03-31 | Increase the back side reflection multilayer metal level of blue chip brightness |
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| CN201520188565.7U CN204577465U (en) | 2015-03-31 | 2015-03-31 | Increase the back side reflection multilayer metal level of blue chip brightness |
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| CN204577465U true CN204577465U (en) | 2015-08-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810460A (en) * | 2015-03-31 | 2015-07-29 | 长治市华光光电科技集团有限公司 | Back multilayer reflecting metal layer for increasing brightness of blue light chip and preparation method of metal layer |
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- 2015-03-31 CN CN201520188565.7U patent/CN204577465U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810460A (en) * | 2015-03-31 | 2015-07-29 | 长治市华光光电科技集团有限公司 | Back multilayer reflecting metal layer for increasing brightness of blue light chip and preparation method of metal layer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150819 Termination date: 20170331 |
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| CF01 | Termination of patent right due to non-payment of annual fee |