CN204575096U - A kind of flexible magnetic turns round type magnetoelectric transducer - Google Patents
A kind of flexible magnetic turns round type magnetoelectric transducer Download PDFInfo
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- CN204575096U CN204575096U CN201520252728.3U CN201520252728U CN204575096U CN 204575096 U CN204575096 U CN 204575096U CN 201520252728 U CN201520252728 U CN 201520252728U CN 204575096 U CN204575096 U CN 204575096U
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Abstract
The utility model provides a kind of flexible magnetic and turns round type magnetoelectric transducer, comprise piezoelectric and permanent magnet, piezoelectric is " sandwich " layer structure at thickness direction, middle layer is supporting layer, two-layerly up and down be flexible PVDF piezoelectric layer, permanent magnet produces magnetic torsion under additional magnetic fields, produces voltage export by the flexural deformation of contact zones dynamic pressure electric material.Compared with prior art, this flexible magnetic is turned round type magnetoelectric transducer and is had higher stability and magnetoelectric voltage coefficient α
mE, when especially externally-applied magnetic field is low frequency, magnetoelectric voltage coefficient α
mEstill can keep high value, the detection to low frequency signal can be realized.
Description
Technical field
The utility model relates to magnetoelectronic devices field, and particularly a kind of flexible magnetic turns round type magnetoelectric transducer.
Background technology
Magnetoelectric effect (magnetoelectric effect) is the coupling existed between the magnetization (M) and electric polarization (P), namely extra electric field can change the magnetic property of medium, or externally-applied magnetic field can change the electric property of medium.The physical application of magnetoelectric effect is apparent, and it can be used for switching energy, and transducing signal, detects magnetic (electricity) field etc.The parameter weighing magnetoelectricity conversion efficiency in industry is magnetoelectric voltage coefficient α
mE(α
mE=δ E/ δ H, wherein E is the electric field that induction produces, and H is for applying magnetic field, unit: V/cm.Oe).Obtain large α
mEit is the direction that researchist and engineering technical personnel make great efforts always.
Sensor technology is the important technology promoting modernization progress, the development experience of sensor is from common to high precision, expensive to popular evolution, the sensor of development high precision, cheapness, low-power consumption has become the megatrend of moment sensor development.Magnetoelectric transducer is the one in sensor, and its device function is based on magnetoelectric effect.Magnetoelectric transducer plays more and more important effect in development of modern scientific technology, and its reliability and dirigibility also make it apply and become more and more extensive.
At present, common magnetoelectricity type sensor is primarily of magnetostriction materials and piezoelectric is stacked is composited, when magnetic fields is to magnetoelectric transducer, magnetostriction materials generation deformation, by the coupling of interfacial force, deformation is passed to piezoelectric, thus make piezoelectric generation deformation, by the direct piezo electric effect output charge of piezoelectric, thus realize the conversion of magnetic to electricity.In order to obtain strong magnetoelectric effect, often need to adopt the material with strong magnetostriction coefficient.But, there is the general expensive price of material of strong magnetostriction coefficient, thus limit its scale and use.
Afterwards, scientist was by piezoelectric patches and magnet compound, and magnet produces magnetic torsion under additional magnetic fields, drove piezoelectric patches flexural deformation to produce voltage and exported, thus realize magnetoelectric effect by interracial contact.In order to distinguish with aforesaid layered electromagnetic sensor, this magnetoelectronic devices is also referred to as magnetic and turns round type magnetoelectric transducer.But current magnetic turns round the piezoelectric ceramics sheet of the piezoelectric patches many employings rigidity in type magnetoelectric transducer structure, and its sensitivity is lower, thus have impact on the magnetoelectricity converting sensitivity of sensor.
In addition, for low-frequency acquisition, the magnetoelectric transducer of full accuracy is SQUID at present, but SQUID needs to work at low temperatures, and expensive, is difficult to be widely used.The magnetoelectric transducer that other detection accuracies are higher has atomic magnetic force type, magnetic flux gate, magnetoelectricity resistance type, magnetoelectricity type sensor, and the Magnetic Sensor of these types is expensive or make complicated, constrains and generally applies.
Thus, be necessary to develop new low cost, highly sensitive magnetoelectric transducer, design the magnetoelectric transducer that a kind of applicable low frequency detects, high magnetoelectric voltage coefficient can be realized and detect with low frequency and combine.
Utility model content
The utility model provides a kind of magnetic and turns round type magnetoelectric transducer, and it adopts flexible piezoelectric sheet, forms flexible magnetic and turns round type magnetoelectric transducer, have the advantage that cost is low, highly sensitive.
The technical solution of the utility model is: a kind of flexible magnetic turns round type magnetoelectric transducer, comprise piezoelectric and permanent magnet, permanent magnet produces magnetic torsion under additional magnetic fields, produce voltage by the flexural deformation of contact zones dynamic pressure electric material to export, it is characterized in that: described piezoelectric is " sandwich " layer structure at thickness direction, middle layer is supporting layer, is two-layerly up and down flexible PVDF piezoelectric layer.
Described supporting layer is for supporting this " sandwich " layer structure, and its material is not limit, and comprises stainless steel, copper, aluminium, organic polymer etc.
Described permanent magnet material is not limit, and is preferably Nd-Fe-B permanent magnet.
As preferably, the thickness of described supporting layer is 0.01mm ~ 0.35mm.
The most preferred, the thickness of described flexible PVDF piezoelectric layer is 0.1mm ~ 0.5mm.
In order to obtain larger magnetic moment of torsion, as preferably, along the length direction of described piezoelectric, one end of this piezoelectric is fixed; Further preferably, described permanent magnet is arranged on the other end of this piezoelectric.The disposing way that the flexible magnetic of this structure turns round type magnetoelectric transducer is not limit, and is preferably suspension type and puts.
In sum, the utility model tool has the following advantages:
(1) flexible PVDF piezoelectric patches is adopted to turn round piezoelectric in type magnetoelectric transducer as magnetic.With existing ceramic piezoelectric material, such as piezoelectric ceramics PZT compares, and this flexible PVDF material has larger magnetoelectric voltage coefficient, thus is conducive to the sensitivity improving magnetoelectric transducer;
(2) consider that the flexible characteristic of flexible PVDF piezoelectric is unfavorable for the stability of sensor, supporting layer is increased to flexible PVDF piezoelectric layer, obtains the piezoelectric of composite structure; And by the selection of support layer material, the adjustment of supporting layer thickness, has higher magnetoelectric voltage coefficient and device stability to take into account;
(3) in order to improve the stability of device further, preferably piezoelectric is designed to " sandwich " structure, middle layer is supporting layer, two-layerly up and down be flexible PVDF piezoelectric layer, namely the symmetrical polarization setting of flexible PVDF piezoelectric layer is in the upper and lower surface of supporting layer, form symmetrical structure, the noise etc. that ambient temperature change etc. causes effectively can be offset, thus be conducive to structural stability;
(4) experiment confirms, flexible magnetic of the present utility model is turned round type magnetoelectric transducer and had higher magnetoelectric voltage coefficient α
mE, when especially externally-applied magnetic field is low frequency, this magnetoelectric voltage coefficient α
mEstill can keep high value, the detection to low frequency signal can be realized.Further, along with the thickness of supporting layer increases, magnetoelectric voltage coefficient α
mEreduce; Along with the thickness of supporting layer increases, this flexible magnetic is turned round type magnetoelectric transducer and is obtained constant α at low frequency
mEfrequency range increase.
The utility model additionally provides a kind ofly prepares the method that above-mentioned flexible magnetic turns round type magnetoelectric transducer, comprises the steps:
Supporting layer and the ultrasonic cleaning of flexible PVDF piezoelectric layer, the air-dry rear cementing agent of alcohol are bonded as described " sandwich " structure, and adhesive surface are adopted silver slurry conducting, then baking and curing;
Permanent magnet is contacted with upper and lower flexible PVDF piezoelectric layer respectively and is connected;
At upper and lower flexible PVDF piezoelectric layer extraction electrode.
Accompanying drawing explanation
Fig. 1 is the structural representation that in the utility model embodiment 1, flexible magnetic turns round type magnetoelectric transducer;
Fig. 2 is the magnetoelectricity piezoelectric modulus test schematic diagram that in the utility model embodiment 1, flexible magnetic turns round type magnetoelectric transducer.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail, it is pointed out that the following stated embodiment is intended to be convenient to understanding of the present utility model, and any restriction effect is not play to it.
Piezoelectric 1, flexible PVDF piezoelectric layer 4, first permanent magnet 5, second permanent magnet 6 of supporting layer the 2, first flexible PVDF piezoelectric layer 3, second, electrode 7, lock-in amplifier 8, Helmholtz coils 9.
Embodiment 1:
Flexible magnetic turns round type magnetoelectric transducer structure as shown in Figure 1, is made up of piezoelectric 1 and permanent magnet.
Piezoelectric 1 is at thickness direction in " sandwich " layer structure, and middle layer is supporting layer 2, is two-layerly up and down flexible PVDF piezoelectric layer, and namely upper strata is the first flexible PVDF piezoelectric layer 3, and lower floor is the second flexible PVDF piezoelectric layer 4.First flexible PVDF piezoelectric layer 3 is connected for fixing to conduct electricity with between supporting layer 2, and the second flexible PVDF piezoelectric layer 4 is connected for fixing to conduct electricity with between supporting layer 2.
Supporting layer 2 is stainless steel material, and the sectional dimension in its length and width direction is 32 millimeters × 6 millimeters, shown in gauge according to the form below 1.
Permanent magnet is the Nd-Fe-B permanent magnet that two pieces of sizes are φ 8 millimeters × 2 millimeters, is respectively the first permanent magnet 5, second permanent magnet 6.
The thick size of length and width of the first flexible PVDF piezoelectric layer 3 and the second flexible PVDF piezoelectric layer 4 is 32 millimeters × 6 millimeters × 0.1 millimeter.
First permanent magnet 5 is arranged on the top of the first flexible PVDF piezoelectric layer 3, and the second permanent magnet 6 is arranged on the below of the second flexible PVDF piezoelectric layer 4.
Electrode 7 is drawn from the first flexible PVDF piezoelectric layer 3 and the second flexible PVDF piezoelectric layer 4 surface respectively.
The preparation method that this flexible magnetic turns round type magnetoelectric transducer comprises the steps:
(1) the flexible PVDF piezoelectric layer 3 of supporting layer 2, first and the second flexible PVDF piezoelectric layer 4 are used Ultrasonic Cleaning 5 minutes, first flexible PVDF piezoelectric layer 3 and the second flexible PVDF piezoelectric layer 4 symmetry polarization are pasted onto the upper and lower surface of supporting layer 2 by air-dry rear use 502 glue of alcohol, form " sandwich " structure, bonding process ensures dimensional accuracy, the conducting of intermediate point silver slurry, then drying baker baking and curing is put into, solidification temperature is 40-60 DEG C, set time is 1-2 hour, obtains piezoelectric 1.
(2) the enameled wire welding production electrode 7 of the fly line that diameter is 0.5-1mm and diameter 0.05-0.2mm is used, enameled wire one side bonds of electrode 7 is solidificated in the first flexible PVDF piezoelectric layer 3 and the second flexible PVDF piezoelectric layer 4 surface, and ensures that bonding rear device has satisfactory electrical conductivity.
(3) the first permanent magnet 5 is fixedly connected on the top of the first flexible PVDF piezoelectric layer 3, the second permanent magnet 6 is fixedly connected on the below of the second flexible PVDF piezoelectric layer 4; And, along the length direction of piezoelectric 1, an end of this piezoelectric is stiff end, and this first permanent magnet 5 and the second permanent magnet 6 are positioned at the other end of this piezoelectric, the fixed position of stiff end adopts acetone to erode surface electrode, exports to prevent electric signal.
During duty, as shown in Figure 1, the stiff end of this piezoelectric is fixed on top, the first permanent magnet 5 and the second permanent magnet 6 are hung down, making this flexible magnetic turn round type magnetoelectric transducer is that suspension type is put.As shown in Figure 2, lock-in amplifier 8 is used to be supplied to the AC magnetic field of Helmholtz coils 9 certain voltage, this AC magnetic field acts on this flexible magnetic and turns round type magnetoelectric transducer, first permanent magnet 5 and the second permanent magnet 6 produce magnetic torsion under this magnetic fields, drive flexible PVDF piezoelectric layer 4 flexural deformation of the first flexible PVDF piezoelectric layer 3, second to produce voltage by contact interface to export, and shown by lock-in amplifier 8.
Result shows, and this flexible magnetic is turned round type magnetoelectric transducer and had higher magnetoelectric voltage coefficient α
mE, especially when the AC magnetic field of Helmholtz coils 9 is low frequency, this magnetoelectric voltage coefficient α
mEstill high value can be kept.When the thickness that table 1 is depicted as supporting layer 2 is different value, test the magnetoelectric voltage coefficient α obtained when the detection frequency of the AC magnetic field of Helmholtz coils 9 is at low frequency
mEvalue and this constant α can be kept
mEthe low frequency ranges of the AC magnetic field of value.
Table 1 support layer material, α
mEvalue and this α
mEthe frequency range of the AC magnetic field corresponding to value
Embodiment 2:
In the present embodiment, the structure that the flexible magnetic structure of turning round type magnetoelectric transducer and the flexible magnetic in embodiment 1 turn round type magnetoelectric transducer is substantially identical, and difference is supporting layer 3 is copper sheet.
The preparation method that this flexible magnetic preparation method of turning round type magnetoelectric transducer and the flexible magnetic in embodiment 1 turn round type magnetoelectric transducer is substantially identical, and difference substitutes stainless steel substrates with copper sheet.
The duty that this flexible magnetic turns round type magnetoelectric transducer is identical with the working method that the flexible magnetic in embodiment 1 turns round type magnetoelectric transducer.Test result shows, and this flexible magnetic is turned round type magnetoelectric transducer and had higher magnetoelectric voltage coefficient α
mE, especially when the AC magnetic field of Helmholtz coils 9 is low frequency, this magnetoelectric voltage coefficient α
mEstill high value can be kept.When the thickness that table 2 is depicted as supporting layer 3 is different value, test the magnetoelectric voltage coefficient α obtained when the detection frequency of the AC magnetic field of Helmholtz coils 9 is at low frequency
mEvalue and this constant α can be kept
mEthe low frequency ranges of the AC magnetic field of value.
Table 2 support layer material, α
mEvalue and this α
mEthe frequency range of the AC magnetic field corresponding to value
Embodiment 3:
In the present embodiment, the structure that the flexible magnetic structure of turning round type magnetoelectric transducer and the flexible magnetic in embodiment 1 turn round type magnetoelectric transducer is substantially identical, and difference is supporting layer 3 is aluminium flake.
The preparation method that this flexible magnetic preparation method of turning round type magnetoelectric transducer and the flexible magnetic in embodiment 1 turn round type magnetoelectric transducer is substantially identical, and difference substitutes stainless steel substrates with aluminium flake.
The duty that this flexible magnetic turns round type magnetoelectric transducer is identical with the working method that the flexible magnetic in embodiment 1 turns round type magnetoelectric transducer.Test result shows, and this flexible magnetic is turned round type magnetoelectric transducer and had higher magnetoelectric voltage coefficient α
mE, especially when the AC magnetic field of Helmholtz coils 9 is low frequency, this magnetoelectric voltage coefficient α
mEstill high value can be kept.When the thickness that table 2 is depicted as supporting layer 3 is different value, test the magnetoelectric voltage coefficient α obtained when the detection frequency of the AC magnetic field of Helmholtz coils 9 is at low frequency
mEvalue and this constant α can be kept
mEthe low frequency ranges of the AC magnetic field of value.
Table 3 support layer material, α
mEvalue and this α
mEthe frequency range of the AC magnetic field corresponding to value
Can draw from table 1,2,3, when detecting frequency in low frequency quasistatic, along with the continuous increase of supporting layer thickness, this flexible magnetic turns round the magnetoelectric voltage coefficient α of type magnetoelectric transducer
mEmore and more less, this is because the Young modulus of supporting layer 3 metal is more much larger than the Young modulus of PVDF, the efficiency that magnetic moment of torsion transmits after supporting layer 3 thickness increases reduces.In addition, along with the increase of supporting layer 3 thickness, this flexible magnetic is turned round type magnetoelectric transducer and is obtained constant α at low frequency
mEfrequency range increase.
Above-described embodiment has been described in detail the technical solution of the utility model; be understood that and the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all any amendments and improvement etc. made in spirit of the present utility model, all should be included within protection domain of the present utility model.
Claims (6)
1. a flexible magnetic turns round type magnetoelectric transducer, comprise piezoelectric and permanent magnet, permanent magnet produces magnetic torsion under additional magnetic fields, produce voltage by the flexural deformation of contact zones dynamic pressure electric material to export, it is characterized in that: described piezoelectric is " sandwich " layer structure at thickness direction, middle layer is supporting layer, is two-layerly up and down flexible PVDF piezoelectric layer.
2. flexible magnetic as claimed in claim 1 turns round type magnetoelectric transducer, it is characterized in that: the thickness of described supporting layer is 0.01mm ~ 0.35mm.
3. flexible magnetic as claimed in claim 1 turns round type magnetoelectric transducer, it is characterized in that: the thickness of described flexible PVDF piezoelectric layer is 0.1mm ~ 0.5mm.
4. the flexible magnetic as described in claim arbitrary in claims 1 to 3 turns round type magnetoelectric transducer, it is characterized in that: along the length direction of described piezoelectric, and one end of this piezoelectric is fixed.
5. flexible magnetic as claimed in claim 4 turns round type magnetoelectric transducer, it is characterized in that: described permanent magnet is arranged on the other end of this piezoelectric.
6. flexible magnetic as claimed in claim 5 turns round type magnetoelectric transducer, it is characterized in that: the disposing way that the flexible magnetic of this structure turns round type magnetoelectric transducer is that suspension type is put.
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| CN201520252728.3U CN204575096U (en) | 2015-04-23 | 2015-04-23 | A kind of flexible magnetic turns round type magnetoelectric transducer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794346A (en) * | 2019-09-26 | 2020-02-14 | 西安交通大学 | Magnetic field sensor based on magnetic torsional electric effect and manufacturing method thereof |
| CN111756351A (en) * | 2020-04-03 | 2020-10-09 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
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2015
- 2015-04-23 CN CN201520252728.3U patent/CN204575096U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794346A (en) * | 2019-09-26 | 2020-02-14 | 西安交通大学 | Magnetic field sensor based on magnetic torsional electric effect and manufacturing method thereof |
| CN110794346B (en) * | 2019-09-26 | 2021-01-19 | 西安交通大学 | Magnetic field sensor based on magnetic torsional electric effect and manufacturing method thereof |
| CN111756351A (en) * | 2020-04-03 | 2020-10-09 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
| CN111756351B (en) * | 2020-04-03 | 2021-08-10 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
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